CN1825476A - 半导体存储器装置 - Google Patents
半导体存储器装置 Download PDFInfo
- Publication number
- CN1825476A CN1825476A CNA2006100582101A CN200610058210A CN1825476A CN 1825476 A CN1825476 A CN 1825476A CN A2006100582101 A CNA2006100582101 A CN A2006100582101A CN 200610058210 A CN200610058210 A CN 200610058210A CN 1825476 A CN1825476 A CN 1825476A
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- China
- Prior art keywords
- transistor
- line
- semiconductor memory
- memory system
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims description 17
- 239000003990 capacitor Substances 0.000 claims abstract description 28
- 238000006243 chemical reaction Methods 0.000 claims description 25
- 239000012212 insulator Substances 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 2
- 238000013500 data storage Methods 0.000 abstract description 4
- 238000009792 diffusion process Methods 0.000 description 16
- 230000005540 biological transmission Effects 0.000 description 9
- 230000008859 change Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000014509 gene expression Effects 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
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- 230000002349 favourable effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 238000000605 extraction Methods 0.000 description 1
- 230000001976 improved effect Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4094—Bit-line management or control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005050632A JP4351178B2 (ja) | 2005-02-25 | 2005-02-25 | 半導体記憶装置 |
JP050632/2005 | 2005-02-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1825476A true CN1825476A (zh) | 2006-08-30 |
CN1825476B CN1825476B (zh) | 2010-10-13 |
Family
ID=36936085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006100582101A Active CN1825476B (zh) | 2005-02-25 | 2006-02-24 | 半导体存储器装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7280385B2 (zh) |
JP (1) | JP4351178B2 (zh) |
KR (1) | KR100720624B1 (zh) |
CN (1) | CN1825476B (zh) |
TW (1) | TWI305916B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102386232A (zh) * | 2010-08-26 | 2012-03-21 | 英飞凌科技奥地利有限公司 | 耗尽型mos晶体管以及充电布置 |
CN102446554A (zh) * | 2010-10-08 | 2012-05-09 | 英飞凌科技股份有限公司 | 对称差分非易失性存储器单元 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102446545B (zh) * | 2011-12-31 | 2014-04-16 | 上海交通大学 | 适用于低功耗芯片的静态随机访问存储器的设计方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8901376A (nl) * | 1989-05-31 | 1990-12-17 | Philips Nv | Geintegreerde geheugenschakeling met een leesversterker. |
JP3028913B2 (ja) * | 1994-11-10 | 2000-04-04 | 株式会社東芝 | 半導体記憶装置 |
JP3549479B2 (ja) | 2000-10-16 | 2004-08-04 | 寛治 大塚 | バラクタデバイスを備えた半導体集積回路 |
JP2002298588A (ja) * | 2001-03-30 | 2002-10-11 | Fujitsu Ltd | 半導体装置及びその検査方法 |
US6711044B2 (en) * | 2001-07-02 | 2004-03-23 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device with a countermeasure to a signal delay |
JP3723477B2 (ja) * | 2001-09-06 | 2005-12-07 | 松下電器産業株式会社 | 半導体記憶装置 |
US6678189B2 (en) | 2002-02-25 | 2004-01-13 | Hewlett-Packard Development Company, L.P. | Method and system for performing equipotential sensing across a memory array to eliminate leakage currents |
JP2003308693A (ja) * | 2002-04-11 | 2003-10-31 | Mitsubishi Electric Corp | 半導体記憶装置 |
US6845033B2 (en) * | 2003-03-05 | 2005-01-18 | International Business Machines Corporation | Structure and system-on-chip integration of a two-transistor and two-capacitor memory cell for trench technology |
-
2005
- 2005-02-25 JP JP2005050632A patent/JP4351178B2/ja active Active
-
2006
- 2006-02-24 TW TW095106538A patent/TWI305916B/zh active
- 2006-02-24 US US11/360,681 patent/US7280385B2/en active Active
- 2006-02-24 KR KR1020060018207A patent/KR100720624B1/ko active IP Right Grant
- 2006-02-24 CN CN2006100582101A patent/CN1825476B/zh active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102386232A (zh) * | 2010-08-26 | 2012-03-21 | 英飞凌科技奥地利有限公司 | 耗尽型mos晶体管以及充电布置 |
CN102386232B (zh) * | 2010-08-26 | 2014-10-29 | 英飞凌科技奥地利有限公司 | 耗尽型mos晶体管以及充电布置 |
CN102446554A (zh) * | 2010-10-08 | 2012-05-09 | 英飞凌科技股份有限公司 | 对称差分非易失性存储器单元 |
CN102446554B (zh) * | 2010-10-08 | 2015-06-17 | 英飞凌科技股份有限公司 | 对称差分非易失性存储器单元 |
Also Published As
Publication number | Publication date |
---|---|
US7280385B2 (en) | 2007-10-09 |
KR20060094916A (ko) | 2006-08-30 |
CN1825476B (zh) | 2010-10-13 |
TW200643951A (en) | 2006-12-16 |
TWI305916B (en) | 2009-02-01 |
US20060203586A1 (en) | 2006-09-14 |
JP2006237330A (ja) | 2006-09-07 |
JP4351178B2 (ja) | 2009-10-28 |
KR100720624B1 (ko) | 2007-05-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20090313 Address after: Tokyo, Japan Applicant after: Toshiba Corp. Co-applicant after: Otsuka Hiroharu Co-applicant after: Renesas Technology Corp. Co-applicant after: Rohm Co.,Ltd. Co-applicant after: Usami Tamotsu Co-applicant after: Oki Electric Industry Co.,Ltd. Co-applicant after: Sanyo Electric Co.,Ltd. Co-applicant after: Sharp Corp. Co-applicant after: Sony Corp. Co-applicant after: NEC Corp. Co-applicant after: Fujitsu microelectronics Society Co-applicant after: Matsushita Electric Industrial Co.,Ltd. Address before: Tokyo, Japan Applicant before: Toshiba Corp. Co-applicant before: Otsuka Hiroharu Co-applicant before: Renesas Technology Corp. Co-applicant before: Rohm Co.,Ltd. Co-applicant before: Usami Tamotsu Co-applicant before: Oki Electric Industry Co.,Ltd. Co-applicant before: Sanyo Electric Co.,Ltd. Co-applicant before: Sharp Corp. Co-applicant before: Sony Corp. Co-applicant before: NEC Corp. Co-applicant before: FUJITSU Ltd. Co-applicant before: Matsushita Electric Industrial Co.,Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Co-patentee after: Otsuka Hiroharu Patentee after: Toshiba Corp. Co-patentee after: Renesas Technology Corp. Co-patentee after: Rohm Co.,Ltd. Co-patentee after: Usami Tamotsu Co-patentee after: Oki Electric Industry Co.,Ltd. Co-patentee after: Sanyo Electric Co.,Ltd. Co-patentee after: Sharp Corp. Co-patentee after: Sony Corp. Co-patentee after: NEC Corp. Co-patentee after: FUJITSU MICROELECTRONICS Ltd. Co-patentee after: Matsushita Electric Industrial Co.,Ltd. Address before: Tokyo, Japan Co-patentee before: Otsuka Hiroharu Patentee before: Toshiba Corp. Co-patentee before: Renesas Technology Corp. Co-patentee before: Rohm Co.,Ltd. Co-patentee before: Usami Tamotsu Co-patentee before: Oki Electric Industry Co.,Ltd. Co-patentee before: Sanyo Electric Co.,Ltd. Co-patentee before: Sharp Corp. Co-patentee before: Sony Corp. Co-patentee before: NEC Corp. Co-patentee before: FUJITSU MICROELECTRONICS Ltd. Co-patentee before: Matsushita Electric Industrial Co.,Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: OTSUKA KANJI USAMI TAMOTSU OKI ELECTRIC INDUSTRY C Free format text: FORMER OWNER: OTSUKA KANJI USAMI TAMOTSU OKI ELECTRIC INDUSTRY CO., LTD. SANYO ELECTRIC CO., LTD. SHARP CORPORATION SONY CORPORATION NEC CORP. FUJITSU SEMICONDUCTOR CO., LTD. MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. RENESAS TECHNOLOGY CORP. ROHM CO., LTD. Effective date: 20141020 |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: Toshiba Corp. Patentee after: Matsushita Electric Industrial Co.,Ltd. Patentee after: Renesas Electronics Corp. Patentee after: Rohm Co.,Ltd. Patentee after: Otsuka Hiroharu Patentee after: Usami Tamotsu Patentee after: Oki Electric Industry Co.,Ltd. Patentee after: Sanyo Electric Co.,Ltd. Patentee after: Sharp Corp. Patentee after: Sony Corp. Patentee after: NEC Corp. Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Tokyo, Japan Patentee before: Toshiba Corp. Patentee before: Matsushita Electric Industrial Co.,Ltd. Patentee before: NEC electronics Kabushiki Kaisha Patentee before: Rohm Co.,Ltd. Patentee before: Otsuka Hiroharu Patentee before: Usami Tamotsu Patentee before: Oki Electric Industry Co.,Ltd. Patentee before: Sanyo Electric Co.,Ltd. Patentee before: Sharp Corp. Patentee before: Sony Corp. Patentee before: NEC Corp. Patentee before: FUJITSU MICROELECTRONICS Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20141020 Address after: Tokyo, Japan Patentee after: Toshiba Corp. Patentee after: Matsushita Electric Industrial Co.,Ltd. Patentee after: NEC electronics Kabushiki Kaisha Patentee after: Rohm Co.,Ltd. Patentee after: Otsuka Hiroharu Patentee after: Usami Tamotsu Patentee after: Oki Electric Industry Co.,Ltd. Patentee after: Sanyo Electric Co.,Ltd. Patentee after: Sharp Corp. Patentee after: Sony Corp. Patentee after: NEC Corp. Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Tokyo, Japan Patentee before: Toshiba Corp. Patentee before: Matsushita Electric Industrial Co.,Ltd. Patentee before: Renesas Technology Corp. Patentee before: Rohm Co.,Ltd. Patentee before: Otsuka Hiroharu Patentee before: Usami Tamotsu Patentee before: Oki Electric Industry Co.,Ltd. Patentee before: Sanyo Electric Co.,Ltd. Patentee before: Sharp Corp. Patentee before: Sony Corp. Patentee before: NEC Corp. Patentee before: FUJITSU MICROELECTRONICS Ltd. |