CN1820889B - 无铅焊料分层结构 - Google Patents

无铅焊料分层结构 Download PDF

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Publication number
CN1820889B
CN1820889B CN2006100080478A CN200610008047A CN1820889B CN 1820889 B CN1820889 B CN 1820889B CN 2006100080478 A CN2006100080478 A CN 2006100080478A CN 200610008047 A CN200610008047 A CN 200610008047A CN 1820889 B CN1820889 B CN 1820889B
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China
Prior art keywords
weight
composition
free solder
lead
solder
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Expired - Fee Related
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CN2006100080478A
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CN1820889A (zh
Inventor
M·G·法鲁克
M·J·因泰雷特
W·E·萨布林斯基
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Tessera Inc
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TAISALA INTELLECTUAL PROPERTY CORP
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract

一种电子封装，具有焊料互连液相线温度分层结构，以限制随后的第二级接合/组装和再加工操作期间C4焊料互连的熔化程度。焊料分层结构使用了Sn/Ag和Sn/Cu的非低共熔焊料合金，具有较高液相线温度的合金用于C4第一级焊料互连，并使用具有较低液相线温度的合金用于第二级互连。当进行第二级芯片载体与PCB接合/组装操作时，芯片与芯片载体的C4互连没有完全熔化。它们继续具有一定程度的固体和较小部分的液体，而不完全是熔化的合金。这减小了焊料连接处的膨胀，并因此降低了作用在C4连接上的应力。

Description

无铅焊料分层结构
技术领域
本发明涉及用于组装电子部件的无铅焊料结构，特别涉及在电子部件的组装中使用的无铅焊料分层结构。
背景技术
用于将芯片接合到陶瓷或有机基板的电流受控塌陷芯片连接(C4)或“倒装芯片”互连技术通常使用97/3Pb/Sn接合用的焊料合金作为互连的芯片侧上的球限冶金层(ball-limiting metallurgy，BLM)，以及互连的基板侧上通常为Ni/Au或Cr/Cu/Ni/Au的适宜的金属化层。该互连结构要承受温度循环。该温度循环的要求很严格，特别是对于芯片直接附装到印制电路板(PCB)的芯片位于板上(chip on board)的互连更是如此。
这是由于芯片的热膨胀系数(TCE)约为百万分之3(ppm)，通常的PCB的热膨胀系数为15-18ppm。对于陶瓷基板芯片载体，TCE匹配得比较好，这是由于陶瓷的TCE在3.5到6.6ppm的范围内。经常使用通常为环氧树脂的底填材料以产生更可靠的结构，特别是对于芯片位于板上的方案，由高TCE不匹配引起的应变被调节，没有造成故障。
现在产业面对的问题是对于所有的制造商来说消除铅是战略要求。要积极地寻找用于解决芯片无铅附装的措施。一个可能的解决措施是使用如Sn/Ag/Cu或Sn/Ag/Bi的富Sn合金，其中合金的约96％为Sn。这种合金要求使用在245～255℃范围内的较低温度进行接合。这与用于Pb/Sn焊料合金高达340℃的温度形成对照。
另一问题是在制造中将芯片接合到通常为陶瓷或有机芯片载体的第一级封装为第一步。之后接着用底填材料密封并附装帽/盖以形成模块。完成第一级互连组件之后，对模块进行第二级结合。第二级结合为将芯片载体互连到PCB。这种互连可以是例如陶瓷球栅阵列(CBGA)、陶瓷柱栅阵列(CCGA)或塑料球栅阵列(PBGA)。在Pb/Sn体系中，所有这些都可以很容易实现，这是由于将第一级芯片结合到芯片载体的步骤使用97/3Pb/Sn焊料合金并要求约340℃这样高的温度。将第二级芯片载体与PCB接合的步骤使用较低Pb的组合物，例如低共熔的Pb/Sn，并要求在200-220℃范围内这样低得多的回流温度。
因此在Pb体系中，在随后的处理期间芯片C4焊料连接基本上不受影响，并且为固态。如果在第一级芯片接合和第二级模块与板的接合都使用无铅、富锡的合金，则在第二级的附装工艺中和随后的回流工艺中就会发生芯片BLM熔化的问题，例如这可能要求返工。
另一问题是当第一级SnAgCu焊料互连完全熔化在底填密封体内时，它会对密封体的壁产生大的流体静应力。这些力产生的应变大到足以造成密封区的分层、破裂、断裂并最终突然失效。这有可能引起C4焊料连接之间的短路，并在C4焊料连接破裂离开它们原始接合的位置时，很可能造成开路。
然而可以使用如AuSn 80/20的其它合金体系产生焊料温度分层结构，这种解决措施没有广泛应用是由于存在多种制造上的问题。例如材料的制造成本、脆性冶金学特性以及在芯片上产生应力的焊料的相互作用。
因此，尽管现有技术有解决问题的措施，但仍需要一种焊料分层结构，使用具有较高液相线温度的合金用于第一级C4互连，并使用具有较低液相线温度的合金用于第二级互连。
因此，本发明的目的是提供一种用于电子封装的无铅焊料分层结构。
结合附图参考下面的说明之后，本发明的这些和其它目的将变得更显而易见。
发明内容
根据本发明的一个方面，提供一种非低共熔无铅焊料组合物，基本上包含以下成分：
52.0-95.0重量％之间的Sn；
48.0-5.0重量％之间的Ag；以及
具有熔化温度大于250℃的金属间化合物。
优选地，所述组合物约为：
72.0重量％的Sn；
28.0重量％的Ag；以及
具有SnAg金属间相组织的分散晶粒。
优选地，所述组合物约为：
82.0重量％的Sn；
18.0重量％的Ag；以及
具有SnAg金属间相组织的分散晶粒。
优选地，所述组合物约为：
88.0重量％的Sn；
12.0重量％的Ag；以及
具有SnAg金属间相组织的分散晶粒。
优选地，所述组合物约为：
52.0重量％的Sn；
48.0重量％的Ag；以及
具有SnAg金属间相组织的分散晶粒。
根据本发明的另一方面，提供一种非低共熔无铅焊料组合物，基本上包含以下成分：
84.0-99.3重量％之间的Sn；
16.0-0.7重量％之间的Cu；以及
具有熔化温度大于250℃的金属间化合物。
通过提供一种用于电子封装互连的无铅焊料分层结构可以实现本发明的目的和优点，包括：电子电路芯片，用第一无铅非低共熔(off-eutectic)焊料组合物附装到芯片载体的顶面；无铅焊料连接的阵列，例如焊料柱或焊料球，用第二无铅非低共熔焊料组合物附装到所述芯片载体的底面，第二无铅非低共熔焊料组合物具有的液相线温度低于第一无铅非低共熔焊料组合物的液相线温度；以及印制电路板，其顶面通过第三无铅焊料组合物附装到无铅焊料连接的阵列，第三无铅焊料组合物具有的液相线温度低于第二无铅非低共熔焊料组合物的液相线温度，由此产生了用于电子封装互连的无铅分层结构。
优选地，所述第一无铅非低共熔焊料组合物为约72.0重量％的Sn和28.0重量％的Ag，并具有SnAg金属间相组织的分散晶粒，以及约400℃的液相线温度；
其中所述第二无铅非低共熔焊料组合物约为82.0重量％的Sn和18.0重量％的Ag，并具有SnAg金属间相组织的分散晶粒，以及约355℃的液相线温度；以及
其中所述第三无铅焊料组合物约为95.5重量％的Sn、3.8重量％的Ag和0.7重量％的Cu，并具有约217℃的液相线温度。
第一芯片互连无铅非低共熔焊料组合物为基本上由52.0-95.0重量％之间的Sn、48.0-5.0重量％之间的Ag组成的合金，并具有熔化温度大于250℃的金属间化合物，以及SnAg金属间相组织的分散晶粒。优选的组合物包括72.0％的Sn和28.0％的Ag；82.0％的Sn和18.0％的Ag；88.0％的Sn和12.0％的Ag；以及52.0％的Sn和48.0％的Ag。
此外，第一芯片互连无铅非低共熔焊料组合物可以是基本上由84.0-93.0重量％之间的Sn、16.0-0.7重量％之间的Cu组成的合金；并具有熔化温度大于250℃的金属间化合物，以及SnCu金属间相组织的分散晶粒。优选的组合物包括84.0％的Sn和16.0％的Cu；以及93.0％的Sn和7.0％的Cu。
本发明也提供了一种用于第一级组件的无铅焊料熔化的分级结构的产生方法，包括以下步骤：
在芯片的底面上提供具有球限冶金焊盘(ball limiting metallurgy pad)的电子电路芯片；
在球限冶金焊盘上放置非低共熔无铅焊料；
加热非低共熔无铅焊料以回流非低共熔无铅焊料并在球限冶金焊盘上形成非低共熔无铅焊料凸点；
在芯片载体的顶面上形成具有电接触焊盘的芯片载体；
放置无铅焊料合金以便与接触焊盘接触；
放置所述非低共熔无铅焊料凸点以接触无铅焊料合金；以及
加热非低共熔无铅焊料凸点以回流非低共熔无铅焊料凸点以形成将芯片连接到芯片载体的非低共熔无铅焊料凸焊缝(fillets)。
根据用于第一级组件的无铅焊料熔化的分级结构的产生方法，还包括将密封体分配在所述芯片和所述芯片载体之间的界面中的步骤。
优选地，所述非低共熔焊料凸焊缝具有约84.0重量％到99.3重量％之间的Sn以及约16.0重量％到0.7重量％之间的Cu的组分，并具有熔化温度大于250℃的金属间化合物。
优选地，所述非低共熔焊料凸焊缝具有约93.0重量％的Sn和7.0重量％的Cu的组分，并具有SnCu金属间相组织的分散晶粒。
优选地，所述非低共熔焊料凸焊缝具有约84.0重量％Sn和16.0重量％的Cu的组分，并具有SnCu金属间相组织的分散晶粒。
优选地，所述非低共熔焊料凸焊缝具有约52.0重量％到95.0重量％之间的Sn以及约48.0重量％到5.0重量％的Ag的组分，并具有熔化温度大于250℃的金属间化合物。
优选地，所述非低共熔焊料凸焊缝具有约82.0重量％Sn和18.0重量％的Ag的组分，并具有SnAg金属间相组织的分散晶粒。
优选地，所述非低共熔焊料凸焊缝具有约88.0重量％Sn和12.0重量％的Ag的组分，并具有SnAg金属间相组织的分散晶粒。
优选地，所述非低共熔焊料凸焊缝具有约72.0重量％Sn和28.0重量％的Ag的组分，并具有SnAg金属间相组织的分散晶粒。
优选地，所述非低共熔焊料凸焊缝具有约52.0重量％Sn和48.0重量％的Ag的组分，并具有SnAg金属间相组织的分散晶粒。
优选地，所述非低共熔无铅焊料组合物还包括0.01重量％到0.5重量％的Bi和0.01重量％到0.5重量％的Sb。
优选地，所述非低共熔无铅焊料组合物还包括0.01重量％到0.5重量％的选自Bi、Sb、In、Zn和Pd的元素。
附图说明
在附带的权利要求书中具体地记载了相信是新颖的本发明的特征以及本发明的元件特性。附图仅为图示目的，没有按比例画出。然而，通过结合附图参见下面详细的说明，可以更好地理解本发明的组成及操作方法：
图1示出了用于本发明的电子封装互连的无铅焊料分层结构的示意图。
图2示出了芯片/舟组件的示意图。
图3示出了根据本发明的带无铅焊料凸点的芯片的示意图。
图4示出了芯片/舟/芯片载体组件的示意图。
图5示出了带有散热的模块示意图。
具体实施方式
本发明提供一种焊料液相线温度分层结构，以限制随后的第二级接合/组装和再加工操作期间芯片和芯片载体之间的C4焊料互连的熔化程度。术语“液相线温度”定义为高于焊料合金完全处于液相的温度的温度。
希望处于模块/封装中其它无Pb接合操作使用的相同合金系统。Sn-Ag-Cu、Sn-Cu或Sn-Ag系统为用于无Pb互连的最流行和优选的合金系统，并被National Electronics Manufacturing Initiative(NEMI)推荐。
本发明使用了合金，Sn、Ag、Cu中的两个或多个的一些组合，较高的液相线温度用于C4第一级焊料互连，较低的液相线温度合金用于第二级互连。根据本发明，当进行第二级芯片载体与PCB接合/组装操作时，芯片与芯片载体的C4互连不能完全熔化。它们继续具有一定程度的固体和较小部分的液体，而不是完全熔化的合金。因此，膨胀减小，在密封体或底填料上产生较小的应力。根据均化回流允许的最大温度，可以使用淀积(镀覆、丝网印刷、蒸镀等)的方法和以不同液相线温度均质化的合金。
在本发明的第一实施方案中，提供Sn/Ag非低共熔无铅焊料的组合物，该组合物具有约52.0-95.0重量％之间的Sn，约48.0-5.0重量％之间的Ag，并具有熔化温度超过250℃的金属间化合物。术语“金属间化合物”的普通含义为具有两种或多种金属的化合物。
在本发明的优选实施方案中，使用具有约400℃的液相线温度的72Sn/28Ag(重量％)焊料合金。用约355-375℃的峰值温度且通常约1-4分钟的足够停留时间进行芯片接合C4回流循环，这将产生均质的无铅C4焊料合金互连。均质化的焊料合金互连具有均匀分布的金属间相组织。
在随后的第二级接合/组装工艺期间，最大峰值温度约250℃。该温度将在C4焊料合金互连中产生糊状的两相金属间组织，它含有约68重量％的液相和约32重量％的固相。该合金组织限制了C4互连的膨胀，并确保周围密封体的整体性。
在本发明的另一优选实施方案中，使用具有约355℃的液相线温度的82Sn/18Ag(重量％)焊料合金。用约355-375℃的峰值温度且通常约1-4分钟的足够停留时间进行芯片接合C4回流循环，这将使C4焊料合金互连完全熔化。然后在随后的第二级接合/组装工艺期间，最大峰值温度约250℃。该温度将在C4焊料合金互连中产生糊状的两相金属间组织，它含有约82重量％的液相和约18重量％的固相。该合金组织限制了C4互连的膨胀，并确保周围密封体的整体性。
在本发明的又一优选实施方案中，使用具有约310℃的液相线温度的88Sn/12Ag(重量％)焊料合金。用约355-375℃的峰值温度且通常约1-4分钟的足够停留时间进行芯片接合C4回流循环，这将使C4焊料合金互连完全熔化。然后在随后的第二级接合/组装工艺期间，最大峰值温度约为250℃。该温度将在C4焊料合金互连中产生糊状两相金属间组织，它含有约91重量％的液相和约9重量％的固相。该合金组织限制了C4互连的膨胀，并确保周围密封体的整体性。
在本发明的又一优选实施方案中，使用具有约480℃的液相线温度的52Sn/48Ag(重量％)焊料合金。用约355-375℃的峰值温度且通常约1-4分钟的足够停留时间进行芯片接合C4回流循环，这将产生均质的C4焊料合金互连。然后在随后的第二级接合/组装工艺期间，最大峰值温度约250℃。该温度将在C4焊料合金互连中产生糊状的两相金属间组织，它含有约38重量％的液相和约62重量％的固相。该合金组织限制了C4互连的膨胀，并确保周围密封体的整体性。
在本发明的第二实施方案中，Sn/Cu非低共熔无铅焊料组合物具有约84.0-99.3重量％之间的Sn和约16.0-0.7重量％之间的Cu，并具有熔化温度大于250℃的金属间化合物。
在本发明的优选实施方案中，使用具有约500℃的液相线温度的84Sn/16Cu(重量％)焊料合金。用约350-375℃的峰值温度且通常约1-4分钟的足够停留时间进行芯片接合C4回流循环，这将产生均质的C4焊料合金互连。然后在随后的第二级接合/组装工艺期间，最大峰值温度约250℃。该温度将在C4焊料合金互连中产生糊状的两相金属间组织，它含有约72重量％的液相和约28重量％的固相。该合金组织限制了C4互连的膨胀，并确保周围密封体的整体性。
在本发明的另一个优选实施方案中，使用具有约410℃的液相线温度的93Sn/7Cu(重量％)焊料合金。用约350-375℃的峰值温度且通常约1-4分钟的足够停留时间进行芯片接合C4回流循环，这将产生均质的无铅C4焊料合金互连。然后在随后的第二级接合/组装工艺期间，最大峰值温度约250℃。该温度将在C4焊料合金互连中产生糊状两相金属间组织，它含有约86重量％的液相和约14重量％的固相。该合金组织限制了C4互连的膨胀，并确保周围密封体的整体性。
本发明能产生用于电子封装互连的无铅焊料分层结构。参考图1，在底面上具有BLM焊盘20的电子电路芯片10附装到具有接触焊盘95的芯片载体90的顶面。芯片10用本发明的无铅非低共熔焊料组合物80接合到芯片载体90。然后使用如焊料柱110或焊料球(未示出)的无铅焊料连接阵列将芯片载体90接合到PCB120。
无铅焊料连接110用第二无铅非低共熔焊料组合物140附装到芯片载体90的底面，第二无铅非低共熔焊料组合物140的液相线温度低于第一无铅非低共熔焊料组合物80的液相线温度。然后芯片载体90通过第三无铅焊料组合物150接合到PCB120，第三无铅焊料组合物150的液相线温度低于第二无铅非低共熔焊料组合物140的液相线温度，由此产生用于电子封装互连的无铅分层结构。
在无铅焊料分层结构的优选实施方案中，第一无铅非低共熔焊料组合物80为约72.0重量％的Sn和28.0重量％的Ag，并具有SnAg金属间相组织的分散晶粒，以及约400℃的液相线温度。第二无铅非低共熔焊料组合物140为约82.0重量％的Sn和18.0重量％的Ag，并具有SnAg金属间相组织的分散晶粒，以及约355℃的液相线温度。第三无铅焊料组合物150为约95.5重量％的Sn、3.8重量％的Ag和0.7重量％的Cu，并具有约217℃的液相线温度。
参考图2介绍优选方法。图2示出了一个电子电路芯片10，在芯片10的底面11上具有BLM焊盘20。通常由石墨制成的预成形舟30含有排列得与芯片10上的BLM焊盘20的位置重合的开口35。然后将本发明的预成形非低共熔焊料40放置在舟开口35中。然后芯片10定位在舟30上，以使BLM焊盘20接触预成形非低共熔焊料40。
此后将所得芯片/舟组件加热到需要的回流温度，通常在350℃和375℃之间，由此预成形的焊料40回流到BLM焊盘20上。然后将芯片/舟组件冷却，致使芯片BLM焊盘20覆盖有非低共熔无铅焊料凸点50，如图3所示。
现在参考图4，示出了含有第二开口65的第二舟60，第二开口65排列得与芯片10上焊料凸点50的位置重合。芯片载体90提供有芯片载体90的顶面91上的接触焊盘95，以使第二开口65与接触焊盘95重合。无铅焊料合金或助熔剂70放置在第二开口65中，并接触焊盘95。然后芯片10定位在第二舟60的相对面上以使得非低共熔无铅焊料凸点50接触焊料合金或助熔剂70。
将所得芯片/芯片载体组件加热到需要的回流温度，由此在涂敷助熔剂或涂敷无铅合金的接触焊盘上回流非低共熔无铅焊料凸点50。然后冷却芯片/芯片载体组件，其中回流的非低共熔焊料凸点形成非低共熔焊料凸焊缝80，将芯片10连接到芯片载体，如图1所示。
再参考图1，其中示出了完成的模块。在将芯片载体90接合到印制电路板(PCB)120之前，将密封体100分布在芯片10下面。通常也称做“底填料”的该密封体100通常为环氧基材料。通过吸收了一些由TCE引起的应力提高了焊料接头的可靠性。
此后通过焊料连接150将芯片载体90接合到PCB120。在图1中，焊料连接显示为柱栅阵列。如图5所示，模块也具有一个散热器130，散热器130或者如图所示直接附装到芯片10，或者附装到设置在芯片上并附装到芯片载体的盖(未示出)。
再参考图1，图中示出了由本发明获得的焊料分层结构。本发明的非低共熔焊料80具有的回流温度高于BSM凸焊缝140的回流温度。类似地，BSM凸焊缝具有的回流温度高于PCB凸焊缝150的回流温度。BSM凸焊缝140对应于相关申请10/246,282中公开的非低共熔无铅焊料组织，PCB凸焊缝为产业中常见的低共熔SnAgCu(SAC)焊料。
对于本领域中的技术人员来说显然将少量的第三或者甚至第四元素添加到公开的Sn/Ag和Sn/Cu非低共熔合金中不会影响分层结构，因此这种添加也在公开的本发明的范围内。添加的元素应容易与Sn形成金属间化合物，与Cu和Ag也同样。这些元素的例子包括Bi、Sb、In、Zn以及Pd。添加约0.5重量％的Sb或0.5重量％的Bi为优选的元素，以解决相对纯的Sn合金中的Sn“须”问题。
本发明改进了现有技术。限制了第二级回流期间C4互连中的液体量，由此减小了施加在密封体上的流体静张力。因此它保持了密封的C4结构的整体性并防止了分层和由于短路造成的电故障。
本发明的附加优点为对于芯片在电路板上的应用，可以使用少量共晶的Sn/Ag、Sn/Cu或Sn/Ag/Cu，以便芯片结合回流循环可以保持在250℃或更小的峰值回流温度。这可以适用于芯片直接在有机封装上的情况中的高温/低温无Pb的C4解决措施。
对于本领域中的技术人员来说显而易见，针对本公开，可以在不背离本发明的精神的条件下对本发明作出超出这里具体介绍的这些实施方案的修改。因此，这种修改认为处于仅由附带的权利要求限定的本发明的范围内。

Claims (14)

1.一种用于电子封装互连的无铅焊料分层结构，包括：
电子电路芯片，用第一无铅非低共熔焊料组合物附装到芯片载体的顶面；
无铅焊料连接的阵列，用第二无铅非低共熔焊料组合物将连接的第一端附装到所述芯片载体的底面，所述第二无铅非低共熔焊料组合物具有的液相线温度低于所述第一无铅非低共熔焊料组合物的液相线温度；以及
印制电路板，顶面通过第三无铅焊料组合物附装到无铅焊料连接的所述阵列的第二面，所述第三无铅焊料组合物具有的液相线温度低于所述第二无铅非低共熔焊料组合物的液相线温度，由此产生了用于电子封装互连的无铅分层结构。
2.根据权利要求1的无铅焊料分层结构，其中所述第一无铅非低共熔焊料组合物为72.0重量％的Sn和28.0重量％的Ag，并具有SnAg金属间相组织的分散晶粒，以及400℃的液相线温度；
其中所述第二无铅非低共熔焊料组合物为82.0重量％的Sn和18.0重量％的Ag，并具有SnAg金属间相组织的分散晶粒，以及355℃的液相线温度；以及
其中所述第三无铅焊料组合物为95.5重量％的Sn、3.8重量％的Ag和0.7重量％的Cu，并具有217℃的液相线温度。
3.根据权利要求1的无铅焊料分层结构，其中所述第一、第二、第三非低共熔无铅焊料组合物中的至少一种组合物包含以下成分：
52.0-95.0重量％之间的Sn；
48.0-5.0重量％之间的Ag；以及
具有熔化温度大于250℃的金属间化合物。
4.根据权利要求3的无铅焊料分层结构，其中所述至少一种组合物为：
72.0重量％的Sn；
28.0重量％的Ag；以及
具有SnAg金属间相组织的分散晶粒。
5.根据权利要求3的无铅焊料分层结构，其中所述至少一种组合物为：
82.0重量％的Sn；
18.0重量％的Ag；以及
具有SnAg金属间相组织的分散晶粒。
6.根据权利要求3的无铅焊料分层结构，其中所述至少一种组合物为：
88.0重量％的Sn；
12.0重量％的Ag；以及
具有SnAg金属间相组织的分散晶粒。
7.根据权利要求3的无铅焊料分层结构，其中所述至少一种组合物为：
52.0重量％的Sn；
48.0重量％的Ag；以及
具有SnAg金属间相组织的分散晶粒。
8.根据权利要求3的无铅焊料分层结构，其中所述至少一种组合物还包括0.01重量％到0.5重量％的Bi和0.01重量％到0.5重量％的Sb。
9.根据权利要求3的无铅焊料分层结构，其中所述至少一种组合物还包括0.01重量％到0.5重量％的选自Bi、Sb、In、Zn和Pd的元素。
10.根据权利要求1的无铅焊料分层结构，其中所述第一、第二、第三非低共熔无铅焊料组合物中的至少一种组合物包含以下成分：
84.0-99.3重量％之间的Sn；
16.0-0.7重量％之间的Cu；以及
具有熔化温度大于250℃的金属间化合物。
11.根据权利要求10的无铅焊料分层结构，其中所述至少一种组合物为：
84.0重量％的Sn；
16.0重量％的Cu；以及
具有SnCu金属间相组织的分散晶粒。
12.根据权利要求10的无铅焊料分层结构，其中所述至少一种组合物为：
93.0重量％的Sn；
7.0重量％的Cu；以及
具有SnCu金属间相组织的分散晶粒。
13.根据权利要求10的无铅焊料分层结构，其中所述至少一种组合物还包括0.01重量％到0.5重量％的Bi和0.01重量％到0.5重量％的Sb。
14.根据权利要求10的无铅焊料分层结构，其中所述至少一种组合物还包括0.01重量％到0.5重量％的选自Bi、Sb、In、Zn和Pd的元素。
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US6854636B2 (en) 2005-02-15
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US20040108367A1 (en) 2004-06-10
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US20050106059A1 (en) 2005-05-19
CN1506188A (zh) 2004-06-23
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TW200419749A (en) 2004-10-01
CN1820889A (zh) 2006-08-23

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