CN1812252B - 压控振荡器 - Google Patents
压控振荡器 Download PDFInfo
- Publication number
- CN1812252B CN1812252B CN200610004546.XA CN200610004546A CN1812252B CN 1812252 B CN1812252 B CN 1812252B CN 200610004546 A CN200610004546 A CN 200610004546A CN 1812252 B CN1812252 B CN 1812252B
- Authority
- CN
- China
- Prior art keywords
- control signal
- frequency
- mos transistor
- voltage
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 116
- 239000013078 crystal Substances 0.000 claims abstract description 30
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 82
- 230000010355 oscillation Effects 0.000 claims description 36
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 230000008030 elimination Effects 0.000 claims description 5
- 238000003379 elimination reaction Methods 0.000 claims description 5
- 230000008859 change Effects 0.000 description 35
- 238000010586 diagram Methods 0.000 description 25
- 239000004065 semiconductor Substances 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 230000008676 import Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000010295 mobile communication Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
- H03B5/366—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device and comprising means for varying the frequency by a variable voltage or current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
- H03B2201/02—Varying the frequency of the oscillations by electronic means
- H03B2201/0208—Varying the frequency of the oscillations by electronic means the means being an element with a variable capacitance, e.g. capacitance diode
Landscapes
- Oscillators With Electromechanical Resonators (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005020028A JP4361500B2 (ja) | 2005-01-27 | 2005-01-27 | 電圧制御型発振器 |
JP020028/05 | 2005-01-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1812252A CN1812252A (zh) | 2006-08-02 |
CN1812252B true CN1812252B (zh) | 2010-10-13 |
Family
ID=36696165
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200610004546.XA Expired - Fee Related CN1812252B (zh) | 2005-01-27 | 2006-01-27 | 压控振荡器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7279998B2 (zh) |
JP (1) | JP4361500B2 (zh) |
CN (1) | CN1812252B (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007158882A (ja) * | 2005-12-07 | 2007-06-21 | Matsushita Electric Ind Co Ltd | 電圧制御型発振器 |
JP2007318397A (ja) * | 2006-05-25 | 2007-12-06 | Matsushita Electric Ind Co Ltd | 電圧制御型発振器及びその周波数制御方法 |
JP2007336254A (ja) * | 2006-06-15 | 2007-12-27 | Oki Electric Ind Co Ltd | 電圧制御発振器 |
JP2008054092A (ja) * | 2006-08-25 | 2008-03-06 | Oki Electric Ind Co Ltd | 可変容量回路とこれを用いた電圧制御発振回路 |
JP5069711B2 (ja) * | 2009-03-09 | 2012-11-07 | 三菱電機株式会社 | Mosfetモデルのパラメータ抽出方法 |
KR101561951B1 (ko) * | 2009-10-21 | 2015-10-20 | 삼성전자 주식회사 | 휴대 단말기의 전력 소모 제어 방법 및 장치 |
WO2011121994A1 (ja) * | 2010-03-30 | 2011-10-06 | 株式会社村田製作所 | 電源装置 |
FR2967500B1 (fr) * | 2010-11-12 | 2013-08-16 | St Microelectronics Sa | Dispositif d'emission/reception d'ondes radar |
CN102545780B (zh) * | 2010-12-23 | 2014-09-03 | 鼎亿数码科技(上海)有限公司 | 压控振荡器的偏置电路 |
JP6123983B2 (ja) * | 2012-09-28 | 2017-05-10 | セイコーエプソン株式会社 | 発振回路、半導体集積回路装置、振動デバイス、電子機器、および移動体 |
JP6878849B2 (ja) * | 2016-11-18 | 2021-06-02 | セイコーエプソン株式会社 | 回路装置、発振器、電子機器及び移動体 |
JP2019097014A (ja) * | 2017-11-22 | 2019-06-20 | セイコーエプソン株式会社 | 温度補償型水晶発振器及びそれを用いた電子機器 |
CN110440883B (zh) * | 2019-07-19 | 2021-04-02 | 广州大学 | 一种石英晶体微天平的静态电容补偿电路和方法 |
CN111835286B (zh) * | 2020-07-27 | 2024-02-02 | 中国电子科技集团公司第十三研究所 | 晶体静态电容抵消电路 |
GB2601143A (en) * | 2020-11-19 | 2022-05-25 | Nordic Semiconductor Asa | Amplitude regulator |
CN114265038B (zh) * | 2021-11-22 | 2024-02-09 | 电子科技大学 | 一种具有温度补偿效应的高精度开关式移相单元 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6040744A (en) * | 1997-07-10 | 2000-03-21 | Citizen Watch Co., Ltd. | Temperature-compensated crystal oscillator |
CN1389015A (zh) * | 2000-08-31 | 2003-01-01 | 西铁城时计株式会社 | 温度补偿型振荡器 |
US6628175B1 (en) * | 2002-03-27 | 2003-09-30 | Pericom Semiconductor Corp. | Voltage-controlled crystal oscillator (VCXO) using MOS varactors coupled to an adjustable frequency-tuning voltage |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5764112A (en) * | 1996-08-27 | 1998-06-09 | Microclock Incorporated | Fully integrated voltage-controlled crystal oscillator |
JP3385344B2 (ja) | 1998-02-02 | 2003-03-10 | 日本電信電話株式会社 | 電圧制御発振器 |
JP2003318417A (ja) | 2002-04-19 | 2003-11-07 | Citizen Watch Co Ltd | Mos型可変容量および半導体集積回路 |
JP4436220B2 (ja) * | 2004-10-04 | 2010-03-24 | パナソニック株式会社 | 電圧制御型発振器 |
-
2005
- 2005-01-27 JP JP2005020028A patent/JP4361500B2/ja not_active Expired - Fee Related
-
2006
- 2006-01-27 US US11/340,790 patent/US7279998B2/en not_active Expired - Fee Related
- 2006-01-27 CN CN200610004546.XA patent/CN1812252B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6040744A (en) * | 1997-07-10 | 2000-03-21 | Citizen Watch Co., Ltd. | Temperature-compensated crystal oscillator |
CN1389015A (zh) * | 2000-08-31 | 2003-01-01 | 西铁城时计株式会社 | 温度补偿型振荡器 |
US6628175B1 (en) * | 2002-03-27 | 2003-09-30 | Pericom Semiconductor Corp. | Voltage-controlled crystal oscillator (VCXO) using MOS varactors coupled to an adjustable frequency-tuning voltage |
Also Published As
Publication number | Publication date |
---|---|
CN1812252A (zh) | 2006-08-02 |
US7279998B2 (en) | 2007-10-09 |
JP4361500B2 (ja) | 2009-11-11 |
US20060164178A1 (en) | 2006-07-27 |
JP2006211249A (ja) | 2006-08-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: KELAIBO INNOVATION CO., LTD. Free format text: FORMER OWNER: MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. Effective date: 20141209 |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP02 | Change in the address of a patent holder |
Address after: Osaka Patentee after: Matsushita Electric Industrial Co.,Ltd. Address before: Osaka Japan Patentee before: Matsushita Electric Industrial Co.,Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20141209 Address after: California, USA Patentee after: Craib Innovations Ltd. Address before: Osaka Patentee before: Matsushita Electric Industrial Co.,Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101013 Termination date: 20160127 |
|
EXPY | Termination of patent right or utility model |