CN1788065A - 粘接性树脂组合物和薄膜状粘接剂以及使用其的半导体装置 - Google Patents

粘接性树脂组合物和薄膜状粘接剂以及使用其的半导体装置 Download PDF

Info

Publication number
CN1788065A
CN1788065A CNA2004800131356A CN200480013135A CN1788065A CN 1788065 A CN1788065 A CN 1788065A CN A2004800131356 A CNA2004800131356 A CN A2004800131356A CN 200480013135 A CN200480013135 A CN 200480013135A CN 1788065 A CN1788065 A CN 1788065A
Authority
CN
China
Prior art keywords
film
resin composition
caking agent
adhesive resin
polyimide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2004800131356A
Other languages
English (en)
Other versions
CN100475926C (zh
Inventor
儿玉洋一
丸山浩
成濑功
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Chemicals Inc
Mitsui Chemical Industry Co Ltd
Original Assignee
Mitsui Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Chemical Industry Co Ltd filed Critical Mitsui Chemical Industry Co Ltd
Publication of CN1788065A publication Critical patent/CN1788065A/zh
Application granted granted Critical
Publication of CN100475926C publication Critical patent/CN100475926C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
    • C08L2666/02—Organic macromolecular compounds, natural resins, waxes or and bituminous materials
    • C08L2666/14—Macromolecular compounds according to C08L59/00 - C08L87/00; Derivatives thereof
    • C08L2666/22—Macromolecular compounds not provided for in C08L2666/16 - C08L2666/20
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2479/00—Presence of polyamine or polyimide
    • C09J2479/08—Presence of polyamine or polyimide polyimide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83885—Combinations of two or more hardening methods provided for in at least two different groups from H01L2224/83855 - H01L2224/8388, e.g. for hybrid thermoplastic-thermosetting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00013—Fully indexed content
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01056—Barium [Ba]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0133—Ternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2852—Adhesive compositions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2852—Adhesive compositions
    • Y10T428/287—Adhesive compositions including epoxy group or epoxy polymer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2852—Adhesive compositions
    • Y10T428/2896—Adhesive compositions including nitrogen containing condensation polymer [e.g., polyurethane, polyisocyanate, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)

Abstract

本发明提供了用于低温粘接性和耐热性优异的薄膜状粘接剂的粘接性树脂组合物和由其制成的薄膜状粘接剂，还提供了使用该薄膜状粘接剂的半导体装置。

Description

粘接性树脂组合物和薄膜状粘接剂以及使用其的半导体装置
技术领域
本发明涉及用于薄膜状粘接剂的粘接性树脂组合物以及由其制成的薄膜状粘接剂，该薄膜状粘接剂作为芯片焊接用材料用于IC或LSI等半导体器件之间的粘接，或者这些半导体器件与支撑部件的粘接。本发明还涉及使用该薄膜状粘接剂的半导体装置。
背景技术
近年来，作为用于IC或LSI这类半导体器件之间的粘接，或者它们与支撑部件的粘接的芯片焊接用材料，逐渐使用薄膜状粘接剂来代替以往的糊状粘接剂。尤其是对于芯片尺寸封装、堆叠封装、系统级封装等封装面积小的高密度封装半导体装置，逐渐广泛地使用与糊状粘接剂相比在厚度精度和密封挤出控制性方面优异的薄膜状粘接剂。
伴随着这种近年来的高密度封装倾向，半导体器件的薄型化也得到了发展，对厚度小于等于100μm的晶片粘贴薄膜状粘接剂时，为了防止晶片破损，在粘贴薄切割所用的表面保护胶带的状态下进行。
如果该粘贴工序中粘贴温度高，则耐热性低的表面保护胶带会热变质，产生晶片的翘曲，把晶片收纳到盒子中或者搬运时会产生非常不好的情况。因此，需求一种具有能够在更低的温度下进行粘接的性质(以下叫做低温粘接性)的薄膜状粘接剂。
作为适用于该用途的低温粘接性优异的薄膜状粘接剂，例如已知一种由具有下述通式(3)所示的重复结构单元的聚酰亚胺硅氧烷构成的粘接剂(参见日本特开平5-331444号公报、特许第2996857号公报、特开平9-59589号公报、特开平11-92744号公报等)。
式(3)中，Y表示四价有机基团；R1和R2表示二价烃基；R3和R4表示一价烃基；R1和R2、R3和R4分别可以相同或者不同；m是大于等于2的整数；n是大于等于1的整数。
已知上述聚酰亚胺硅氧烷通常可以至少使用下述通式(4)所示的二氨基聚硅氧烷作为二胺成分，使用下述通式(5)所示的四羧酸二酐作为二酐成分，加热这些成分使它们发生酰亚胺化反应而制得。
Figure A20048001313500041
式(4)中，R1和R2表示二价烃基；R3和R4表示一价烃基；R1和R2、R3和R4分别可以相同或者不同；m是大于等于2的整数。
Figure A20048001313500042
式(5)中，Y表示四价有机基团。
所述式(4)表示的二氨基聚硅氧烷通常是在碱性催化剂条件下使下述通式(6)所示的二氨基硅氧烷化合物和下述通式(7)所示的环状硅氧烷发生反应而得到。该反应是平衡反应，因此在通式(4)所示的二氨基聚硅氧烷中，必然残留作为杂质的通式(7)所示的环状硅氧烷。
式(6)中，R1和R2表示二价烃基；R3和R4表示一价烃基；R1和R2、R3和R4分别可以相同或者不同。
Figure A20048001313500044
式(7)中，R3和R4表示一价烃基，分别可以相同或者不同。1是大于等于3的整数。
该残留的环状硅氧烷尽管是非反应性的，但其具有与其分子量相关的沸点，低分子量的物质在较低温度下会挥发。其结果，本发明人等发现，如果在制造半导体装置时，使用以没有进行过环状硅氧烷的减少处理的二氨基聚硅氧烷作为原料的聚酰亚胺硅氧烷构成的薄膜状粘接剂，则在该工序中的加热会使环状硅氧烷挥发，而带来不良情况。
例如，制造工序中有一个步骤是引线接合工序，此时制造中的半导体装置被置于150℃～200℃左右的温度环境下几分钟～1小时左右。此时，如果低沸点的环状硅氧烷(环状三聚物的沸点为134℃，环状四聚物的沸点为175℃)挥发，就会污染引线接合的底垫部，诱发引线接合的粘接强度下降或者接合差错，而成为问题。
而另一方面，近年来随着环境问题受到深刻重视，促使接合半导体装置和衬底用的焊料的无铅化。作为无铅焊料的有力候补可以举出Sn-Ag-Cu系焊料，其熔点为约220℃，与现有的Sn-Pb系焊料的熔点约180℃相比，要高出约40℃，可以说使用无铅焊料封装时的半导体装置的表面温度达到250～260℃。因此，需求在260℃也能够保持充分的粘接强度的耐热性优异的薄膜状粘接剂。
为了解决所述问题，本发明的目的就是提供用于低温粘接性和耐热性优异的薄膜状粘接剂的粘接性树脂组合物以及由其制成的薄膜状粘接剂，还提供使用该薄膜状粘接剂的半导体装置。
发明内容
第一发明，其特征是含有热塑性聚酰亚胺和热固性树脂，其中，该热塑性聚酰亚胺通过使含有下述通式(1)所示的二胺的二胺成分与四羧酸二酐反应得到，相对于100重量份该热塑性聚酰亚胺，该热固性树脂的含量为1～200重量份。
Figure A20048001313500051
式(1)中，R各自独立地表示从氢原子、卤素原子和烃基组成的组中选出的原子或基团；n是平均为1～50的正数；Y表示碳原子数为2～10的非取代或取代的二价有机基团；当n大于等于2时，多个Y可以相同或者不同。
当所述通式(1)所示的二胺为下述通式(2)所示的二胺时，由于比较容易合成，因此是本发明的粘接性树脂组合物的优选形式。从低温粘接性的角度考虑，当所述通式(1)所示的二胺在全体二胺成分中的含量为20摩尔％或其以上时，是本发明粘接性树脂组合物的优选形式。
式(2)中，n是平均为1～50的正数；Z表示碳原子数为2～10的亚烷基；当n大于等于2时，多个Z可以相同或者不同。
第二发明是由所述粘接性树脂组合物制成的薄膜状粘接剂。
第三发明是使用所述薄膜状粘接剂粘接半导体器件而制造的半导体装置。
具体实施方式
本发明的粘接性树脂组合物含有通过使含有下述通式(1)所示的二胺的二胺成分与四羧酸二酐反应而得到的热塑性聚酰亚胺；以及热固性树脂。
式(1)中，R各自独立地表示从氢原子、卤素原子、烃基组成的组中选出的原子或基团；n是平均为1～50的正数；Y表示碳原子数为2～10的非取代或取代的二价有机基团；当n大于等于2时，多个Y可以相同或者不同。
上述式(1)所示的二胺是在两个末端具有邻、间或对氨基苯甲酸酯基的二胺。其中，优选两个末端为对氨基苯甲酸酯基情形的所述式(2)所示的二胺。式(1)中，n是平均为1～50的正数，优选平均为3～25的正数。Y优选碳原子数为2～10的亚烷基，更优选碳原子数为2～5的亚烷基。
当n大于等于2时，多个Y可以相同或者不同。
R作为卤素原子，可以举出氟、氯等；作为烃基，可以举出甲基、乙基、丙基等。Y作为碳原子数为2～10的非取代或取代的二价有机基团，可以举出亚烷基、烷基醚基等，作为碳原子数为2～10的亚烷基，例如可以举出亚乙基、三亚甲基、四亚甲基、五亚甲基等，尤其优选四亚甲基。
作为式(1)所示的二胺的具体例，例如可以举出聚四亚甲基氧-二邻氨基苯甲酸酯、聚四亚甲基氧-二间氨基苯甲酸酯、聚四亚甲基氧-二对氨基苯甲酸酯、聚三亚甲基氧-二邻氨基苯甲酸酯、聚三亚甲基氧-二间氨基苯甲酸酯、聚三亚甲基氧-二对氨基苯甲酸酯等，但并不限于这些。其中，优选通式(2)所示的聚四亚甲基氧-二对氨基苯甲酸酯。
该二胺在全体二胺成分中的含量优选为20摩尔％或其以上，更优选为40摩尔％或其以上。上限优选为80摩尔％或其以下。如果在该范围内，则在用作为粘接剂时可以抑制粘接温度增高。
另外，作为与式(1)所示的二胺一起使用的二胺，可以举出如3，3’-二氨基二苯甲酮、4，4’-二氨基二苯甲酮、3，3’-二氨基二苯醚、4，4’-二氨基二苯醚、4，4’-双(3-氨基苯氧基)联苯、4，4’-双(4-氨基苯氧基)联苯、1，3-双(3-氨基苯氧基)苯、1，4-双(4-氨基苯氧基)苯、双(3-(3-氨基苯氧基)苯基)醚、双(4-(4-氨基苯氧基)苯基)醚、1，3-双(3-(3-氨基苯氧基)苯氧基)苯、1，4-双(4-(4-氨基苯氧基)苯氧基)苯、双(3-(3-(3-氨基苯氧基)苯氧基)苯基)醚、双(4-(4-(4-氨基苯氧基)苯氧基)苯基)醚、1，3-双(3-(3-(3-氨基苯氧基)苯氧基)苯氧基)苯、1，4-双(4-(4-(4-氨基苯氧基)苯氧基)苯氧基)苯、2，2-双[4-(3-氨基苯氧基)苯基]丙烷、2，2-双[4-(4-氨基苯氧基)苯基]丙烷、2，2-双[4-(3-氨基苯氧基)苯基]-1，1，1，3，3，3-六氟丙烷、2，2-双[4-(4-氨基苯氧基)苯基]-1，1，1，3，3，3-六氟丙烷等，但并不限于这些。其中，优选4，4’-双(3-氨基苯氧基)联苯、1，3-双(3-氨基苯氧基)苯、1，3-双(3-(3-氨基苯氧基)苯氧基)苯。这些可以单独或者混合两种或其以上来使用。
能够用于本发明的四羧酸二酐没有特别限制，可以使用迄今公知的四羧酸二酐，通过使用不同种类的四羧酸二酐，可以得到具有不同玻璃化转变温度的聚酰亚胺。
用于本发明的四羧酸二酐的具体例可以举出如均苯四酸二酐、3，3’，4，4’-二苯甲酮四羧酸二酐、3，3’，4，4’-联苯四羧酸二酐、氧代-4，4’-二邻苯二甲酸二酐、乙二醇双偏苯三酸酯二酐、2，2-双(4-(3，4-二羧基苯氧基)苯基)丙烷二酐等，这些可以单独或者混合两种或其以上来使用。
其中，优选氧代-4，4’-二邻苯二甲酸二酐、乙二醇双偏苯三酸酯二酐。
作为聚酰亚胺的制造方法，可以使用包括公知方法在内的能够制造聚酰亚胺的所有方法。其中，优选在有机溶剂中进行反应。用于该反应的溶剂，例如可以举出N，N-二甲基甲酰胺、N，N-二甲基乙酰胺、N-甲基-2-吡咯烷酮、1，2-二甲氧基乙烷、四氢呋喃、1，3-二恶烷、1，4-二恶烷、二甲基亚砜、苯、甲苯、二甲苯、均三甲苯、苯酚、甲酚等。这些可以单独或者混合两种或其以上来使用。
另外，在该反应中的反应原料在溶剂中的浓度，通常为2～50重量％，优选为5～40重量％，四羧酸二酐与二胺成分的反应摩尔比为，以四羧酸二酐/二胺成分计，优选在0.8～1.2范围内。如果在该范围内，不会使耐热性下降，因此是优选的。
作为聚酰亚胺的前驱体的聚酰胺酸合成中的反应温度，通常为小于等于60℃，优选为10℃～50℃。对于反应压力没有特别限制，在常压就足以实施。另外，反应时间虽然因反应原料的种类、溶剂种类及反应温度而异，但通常0.5～24小时就充分。本发明的聚酰亚胺，通过把这样得到的聚酰胺酸加热到100～400℃而进行酰亚胺化，或者通过使用醋酸酐等酰亚胺化剂而进行化学酰亚胺化，来得到具有对应于聚酰胺酸的重复单元结构的聚酰亚胺。
此外，通过在130℃～250℃下进行反应，同时进行聚酰胺酸的生成与热酰亚胺化反应，可以得到本发明的聚酰亚胺。即，通过在有机溶剂中悬浮或者溶解二胺成分与四羧酸二酐，在130℃～250℃的加热条件下进行反应，同时进行聚酰胺酸的生成与脱水酰亚胺化，可以得到本发明的聚酰亚胺。
本发明的聚酰亚胺的分子量没有特别限制，可以根据用途或加工方法而制成任意的分子量。本发明的聚酰亚胺通过调节所使用的二胺成分、四羧酸二酐的量的比例，例如把聚酰亚胺以0.5g/dl的浓度溶解到N-甲基-2-吡咯烷酮中后，可以使其在35℃下测定的对数粘度(分子量指标)值处于0.1～3.0dl/g范围内的任意值。
本发明中，所谓聚酰亚胺，除了100％被酰亚胺化的聚酰亚胺以外，还包括一部分共存的其前驱体聚酰胺酸的树脂。
另外，在上述反应中得到的聚酰亚胺溶液可以直接使用，也可以把该聚酰亚胺溶液投入到贫溶剂中，以再沉淀析出聚酰亚胺。
本发明的粘接性树脂组合物，在上述聚酰亚胺中含有热固性树脂，并且根据需要含有填料而得到。
热固性树脂，只要能够通过加热而形成三维网状结构，就没有特别限制，但从固化性优异的观点考虑，优选由分子中至少含有两个环氧基的环氧化合物与固化剂构成的树脂。
作为环氧化合物，例如可以举出双酚A、双酚S、双酚F的缩水甘油醚、苯酚酚醛清漆型环氧树脂、联苯型环氧化合物等。
相对于100重量份聚酰亚胺，环氧化合物的配合量为1～200重量份，优选为1～100重量份。如果在该范围内，则可以维持耐热性，不会恶化薄膜形成性。
另外，作为固化剂，例如可以举出咪唑类固化剂、酚类固化剂、胺类固化剂、酸酐类固化剂等。从树脂组合物的保存稳定性的观点来说，优选具有热潜在性和可长期使用的物质。
相对于100重量份环氧化合物，固化剂的配合量优选在0～20重量份范围内。如果在该范围内，则在树脂溶液状态下不易产生凝胶，树脂溶液的保存稳定性优异。
作为填料，只要是公知的物质就没有特别限制，作为有机填料的具体例，可以举出环氧树脂、蜜胺树脂、尿素树脂、酚醛树脂等高分子化或者交联至不溶于树脂溶解溶剂中的微粒型填料；而作为无机填料的具体例，可以举出氧化铝、氧化锑、铁素体等金属氧化物的微粒，或者滑石、硅石、云母、高岭土、沸石等硅酸盐类，硫酸钡、碳酸钙等的微粒。上述填料可以单独或者混合两种或其以上来使用。
相对于100重量份聚酰亚胺，上述填料的配合量为0～5000重量份，优选为0～3000重量份的范围。如果在该范围内，在树脂溶液状态下填料不易沉降，树脂溶液的保存稳定性优异。另一方面，如果填料过多，在用作为薄膜状粘接剂时会使粘接性下降。
另外，也可以根据需要添加偶合剂。偶合剂只要不损害本发明的目的，则没有特别限制，优选对于树脂溶解溶剂的溶解性良好的物质。例如，具体例可以举出硅烷类偶合剂、钛类偶合剂等。
相对于100重量份聚酰亚胺，偶合剂的配合量为0～50重量份，优选为0～30重量份的范围。如果在该范围内，耐热性就不会下降。
本发明的粘接性树脂组合物优选具有30℃～200℃的玻璃化转变温度或者软化温度。通过具有该范围内的玻璃化转变温度或软化温度，可以发挥本发明特征即低温粘接性。如果玻璃化转变温度小于30℃而过低，则用作为薄膜状粘接剂时，粘连性就增大，不仅使作业性下降，而且保存稳定性也会变差。另外，如果超过200℃而过高，则使用由其制成的薄膜状粘接剂而制作半导体装置时，封装温度达到高温，因此是不适宜的。
这里，薄膜状粘接剂的玻璃化转变温度与粘接性树脂组合物相同。
使用上述的本发明的粘接性树脂组合物制造薄膜状粘接剂的方法没有特别限制，例如可以举出，把该粘接性树脂组合物溶解到有机溶剂中得到树脂溶液，然后把该树脂溶液涂布到树脂薄膜或耐热性薄膜的单面或两面上后，加热使溶剂挥发而进行薄膜化的方法。
制造本发明的薄膜状粘接剂时使用的有机溶剂，只要是能够将材料均匀地溶解、混炼或分散的物质就没有特别限制，例如可以举出N，N-二甲基甲酰胺、N，N-二甲基乙酰胺、N-甲基-2-吡咯烷酮、1，2-二甲氧基乙烷、四氢呋喃、1，3-二恶烷、1，4-二恶烷、二甲基亚砜、苯、甲苯、二甲苯、均三甲苯、苯酚、甲酚等。这些可以单独或者混合两种或其以上来使用。
这里，作为制造薄膜状粘接剂时使用的树脂薄膜，只要是不溶于为了溶解上述粘接性树脂组合物而使用的有机溶剂，并且在使溶剂挥发的加热薄膜化过程中不会软化或热劣化的物质，就可以是任意材料。优选与薄膜状粘接剂的剥离性优异的树脂薄膜，其例子可以举出在表面进行过硅树脂处理或特氟隆(注册商标)处理的聚对苯二甲酸乙二醇酯薄膜等。
耐热性薄膜可以举出由聚酰亚胺、聚苯硫醚、聚醚、聚醚酮、聚醚醚酮的耐热性树脂制成的薄膜；环氧树脂-玻璃布、环氧树脂-聚酰亚胺-玻璃布等复合耐热薄膜等。其中优选聚酰亚胺。
薄膜状粘接剂的厚度优选为1μm～50μm，更优选为5μm～40μm。如果过于薄，则在半导体装置的制造工序中使用时，难以牢固地粘接薄膜状粘接剂与支撑部件，另外，如果厚得超过50μm，则不会提高对于支撑部件的埋入性等，因此只要在该范围内就足够。
本发明的薄膜状粘接剂，在半导体装置中，可以适宜地用于把半导体器件粘接到支撑部件上所使用的所谓芯片粘结薄膜(Die Attach Film)等。使用本发明的薄膜状粘接剂的半导体装置的制作方法没有特别限制，可以举出如下的方法。
在加热的半导体晶片背面粘贴薄膜状粘接剂，切断晶片外周的薄膜而得到带有薄膜状粘接剂的晶片。把该晶片切割成任意尺寸，得到带有薄膜状粘接剂的半导体器件。接着，将其在支撑部件上加热压接。然后，经过引线接合工序、铸模工序，得到半导体装置。
支撑部件可以举出刚性衬底、柔性衬底、引线框等，并且层积多层芯片时，还有芯片、隔板等。
实施例
下面，根据实施例进一步详细说明本发明，但本发明并不限于这些实施例。
合成例1
在配备有搅拌器、氮气通入管、温度计、装满均三甲苯的分水蒸馏接受管(デイ一ンスタ一ク)的300ml五口分离烧瓶(セパラブルフラスコ)中，称取4，4’-双(3-氨基苯氧基)联苯17.00g、聚四亚甲基氧-二对氨基苯甲酸酯(イハラケミカル工业株式会社制造，商品名：ェラスマ-1000，平均分子量为1305)40.14g、N-甲基-2-吡咯烷酮86.3g、均三甲苯37.0g，在氮气氛围下加热至50℃将其溶解，接着，在其中一点点加入氧代-4，4’-二邻苯二甲酸二酐25.05g。然后，把氮气通入管插入溶液中(冒泡状态)，把体系内的温度加热至170℃～180℃，边共沸去除水边保持14小时。冷却后，加入N-甲基-2-吡咯烷酮61.6g和均三甲苯26.4g稀释，得到聚酰亚胺(P-1)的溶液。在N-甲基-2-吡咯烷酮中以0.5g/dl的浓度制成溶液后，在35℃下使用乌氏粘度计测定该聚酰亚胺(P-1)的对数粘度，其结果为0.45dl/g。
合成例2
在配备有搅拌器、氮气通入管、温度计、装满均三甲苯的分水蒸馏接受管的300ml五口分离烧瓶中，称取1，3-双(3-氨基苯氧基)苯8.00g、聚四亚甲基氧-二对氨基苯甲酸酯(イハラケミカル工业株式会社制造，商品名：ェラスマ-1000，平均分子量为1305)53.58g、N-甲基-2-吡咯烷酮88.1g、均三甲苯37.7g，在氮气氛围下加热至50℃将其溶解，接着，在其中一点点加入氧代-4，4’-二邻苯二甲酸二酐22.29g。
然后，把氮气通入管插入溶液中(冒泡状态)，把体系内的温度加热至170℃～180℃，边共沸去除水边保持14小时。冷却后，加入N-甲基-2-吡咯烷酮62.5g和均三甲苯26.8g稀释，得到聚酰亚胺(P-2)的溶液。在N-甲基-2-吡咯烷酮中以0.5g/dl的浓度溶解后，在35℃下使用乌氏粘度计测定该聚酰亚胺(P-2)的对数粘度，其结果为0.41dl/g。
合成例3
在配备有搅拌器、氮气通入管、温度计、装满均三甲苯的分水蒸馏接受管的300ml五口分离烧瓶中，称取1，3-双(3-(3-氨基苯氧基)苯氧基)苯14.00g、聚四亚甲基氧-二对氨基苯甲酸酯(イハラケミカル工业株式会社制造，商品名：ェラスマ-1000，平均分子量为1305)46.59g、N-甲基-2-吡咯烷酮85.8g、均三甲苯36.8g，在氮气氛围下加热至50℃将其溶解，接着，在其中一点点加入氧代-4，4’-二邻苯二甲酸二酐21.14g。然后，把氮气通入管插入溶液中(冒泡状态)，把体系内的温度加热至170℃～180℃，边共沸去除水边保持14小时。冷却后，加入N-甲基-2-吡咯烷酮61.3g和均三甲苯26.3g稀释，得到聚酰亚胺(P-3)的溶液。在N-甲基-2-吡咯烷酮中以0.5g/dl的浓度溶解后，在35℃下使用乌氏粘度计测定该聚酰亚胺(P-3)的对数粘度，其结果为0.41dl/g。
合成例4
在配备有搅拌器、氮气通入管、温度计、装满均三甲苯的分水蒸馏接受管的300ml五口分离烧瓶中，称取1，3-双(3-氨基苯氧基)苯10.00g、二氨基聚硅氧烷(东丽道康宁有机硅株式会社制造，BY16-853U，平均分子量为920)47.21g、N-甲基-2-吡咯烷酮89.3g、均三甲苯38.3g，在氮气氛围下加热至50℃将其溶解，接着，在其中一点点加入氧代-4，4’-二邻苯二甲酸二酐27.86g。然后，把氮气通入管插入溶液中(冒泡状态)，把体系内的温度加热至170℃～180℃，边共沸去除水边保持14小时。冷却后，加入N-甲基-2-吡咯烷酮49.6g和均三甲苯21.3g稀释，得到聚酰亚胺(P-4)的溶液。在N-甲基-2-吡咯烷酮中以0.5g/dl的浓度溶解后，在35℃下使用乌氏粘度计测定该聚酰亚胺(P-4)的对数粘度，其结果为0.24dl/g。
实施例1
在合成例1得到的聚酰亚胺(P-1)的溶液中，相对于其固体组分100重量份，配合环氧化合物(三井化学株式会社制造，VG3101)20重量份、咪唑类固化剂(四国化成工业株式会社制造，2MAOK-PW)1重量份、硅石类填料(株式会社龙森制造，1-FX)40重量份，用搅拌器充分地混合，得到粘接性树脂组合物。把得到的树脂组合物浇注到表面处理过的PET薄膜(帝人杜邦薄膜株式会社制造，A31，厚度为50μm)上，在90℃加热20分钟后，剥离PET薄膜，得到厚度为25μm的单层薄膜状粘接剂。用TMA(株式会社マツク·サイェンス制造，TMA4000)测定所得到单层薄膜状粘接剂的玻璃化转变温度(Tg)，其结果为49℃。
为了评价耐热性，把切断成5mm正方形的单层薄膜状粘接剂，夹到5mm正方形的硅芯片与20mm正方形的硅芯片之间，在200℃以0.1N荷重加热压接1秒后，在180℃无荷重下加热固化3小时。用剪切试验机在260℃加热30秒时测定所得到试验片的剪切强度，其结果为6MPa。
另外，把所得到的单层薄膜状粘接剂作为试样，对于从其挥发的环状硅氧烷的总量，按照以下条件进行气相色谱测定，其结果小于等于检测界限(≤1ppm)。将结果示于表1中。
<气相色谱的条件>
装置：Hewlett Packard公司制造，7694/6890GC系统
分离柱：HP-5MS，30m，0.25mmφ
分离柱炉温：40℃(3分钟)→以10℃/分钟升温→300℃
测定方法：把0.5g试样装入10ml偏斜瓶(バイアス)中，封好，测定将其在180℃加热30分钟时的挥发组分。
实施例2
除了使用合成例2得到的聚酰亚胺(P-2)的溶液以外，与实施例1同样地配合树脂而调制粘接性树脂组合物，使用其得到薄膜状粘接剂。对于所得到的薄膜状粘接剂，与实施例1同样地进行粘接性评价、耐热性评价及环状硅氧烷挥发量测定。将结果示于表1中。
实施例3
除了使用合成例3得到的聚酰亚胺(P-3)的溶液以外，与实施例1同样地操作，进行粘接性评价、耐热性评价及环状硅氧烷挥发量测定。
将结果示于表1中。
比较例1
除了使用合成例4得到的聚酰亚胺(P-4)的溶液以外，与实施例1同样地操作，进行粘接性评价、耐热性评价及环状硅氧烷挥发量测定。
将结果示于表1中。
表1
  实施例1   实施例2   实施例3   实施例4
  聚酰亚胺(配合量)   P-1(100重量份)   P-2(100重量份)   P-3(100重量份)   P-4(100重量份)
  环氧化合物(配合量)   VG3101(20重量份)   VG3101(20重量份)   VG3101(20重量份)   VG3101(20重量份)
  固化剂(配合量)   2MAOK-PW(1重量份)   2MAOK-PW(1重量份)   2MAOK-PW(1重量份)   2MAOK-PW(1重量份)
  填料(配合量)   1-FK(40重量份)   1-FK(40重量份)   1-FK(40重量份)   1-FK(40重量份)
  Tg(℃)   49   48   54   52
  受热时剪切强度(MPa) 6 7 7 3
  环状硅氧烷挥发量(ppm) ＜1 ＜1 ＜1 85
由以上可以知道，使用实施例1～3的粘接性树脂组合物的薄膜状粘接剂耐热性优异，具有低的玻璃化转变温度，低温粘接性优异，表现出高的受热时剪切强度。另外，以二氨基聚硅氧烷为原料而得到聚酰亚胺，由该聚酰亚胺制成的比较例1的树脂组合物的薄膜状粘接剂被检测到85ppm的环状硅氧烷，与此相反，从实施例1～3的薄膜状粘接剂中就检测不到环状硅氧烷。
产业上的利用可能性
如果使用本发明的粘接性树脂组合物，那么可以提供兼具优异的低温粘接性和优异的耐热性的薄膜状粘接剂。并且，由于没有使用二氨基聚硅氧烷作为原料，所以封装时不存在环状硅氧烷挥发的问题，因此，使用该薄膜状粘接剂的半导体装置封装可靠性优异。

Claims (5)

1.粘接性树脂组合物，其特征在于含有热塑性聚酰亚胺和热固性树脂，该热塑性聚酰亚胺通过使含有下述通式(1)所示的二胺的二胺成分与四羧酸二酐反应得到，相对于100重量份该热塑性聚酰亚胺，热固性树脂的含量为1～200重量份，
式(1)中，R各自独立地表示从氢原子、卤素原子、烃基组成的组中选择的原子或基团，n是平均为1～50的正数，Y表示碳原子数为2～10的非取代或取代的二价有机基团；当n大于等于2时，多个Y可以相同或者不同。
2.根据权利要求1所述的粘接性树脂组合物，其特征在于，所述通式(1)所示的二胺为下述通式(2)所示的二胺，
式(2)中，n是平均为1～50的正数，Z表示碳原子数为2～10的亚烷基；当n大于等于2时，多个Z可以相同或者不同。
3.根据权利要求1所述的粘接性树脂组合物，其特征在于，所述通式(1)所示的二胺在全部二胺成分中的含量为20摩尔％或其以上。
4.由权利要求1～3的任一项所述的粘接性树脂组合物制成的薄膜状粘接剂。
5.使用权利要求4所述的薄膜状粘接剂粘接半导体器件而制造的半导体装置。
CNB2004800131356A 2003-05-14 2004-04-13 粘接性树脂组合物和薄膜状粘接剂以及使用其的半导体装置 Expired - Fee Related CN100475926C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003136252 2003-05-14
JP136252/2003 2003-05-14

Publications (2)

Publication Number Publication Date
CN1788065A true CN1788065A (zh) 2006-06-14
CN100475926C CN100475926C (zh) 2009-04-08

Family

ID=33447212

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800131356A Expired - Fee Related CN100475926C (zh) 2003-05-14 2004-04-13 粘接性树脂组合物和薄膜状粘接剂以及使用其的半导体装置

Country Status (7)

Country Link
US (1) US7488532B2 (zh)
EP (1) EP1624038B1 (zh)
JP (1) JP4359242B2 (zh)
KR (1) KR100672822B1 (zh)
CN (1) CN100475926C (zh)
DE (1) DE602004014365D1 (zh)
WO (1) WO2004101701A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113488743A (zh) * 2021-06-23 2021-10-08 万向一二三股份公司 一种锂电池正极极耳绝缘涂层及其制备方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006161038A (ja) * 2004-11-12 2006-06-22 Mitsui Chemicals Inc フィルム状接着剤およびそれを用いた半導体パッケージ
TWI286828B (en) 2004-11-12 2007-09-11 Mitsui Chemicals Inc Film-shaped adhesive and semiconductor package using the same
JP2007112890A (ja) * 2005-10-20 2007-05-10 Kaneka Corp 新規なポリイミド樹脂
JP4976380B2 (ja) * 2006-04-03 2012-07-18 三井化学株式会社 金属積層体
KR101023841B1 (ko) * 2006-12-08 2011-03-22 주식회사 엘지화학 접착제 수지 조성물 및 이를 이용한 다이싱 다이 본딩 필름

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3164324B2 (ja) 1992-06-04 2001-05-08 住友ベークライト株式会社 低温熱圧着可能なフィルム接着剤
JP2866779B2 (ja) 1993-01-05 1999-03-08 三井化学株式会社 耐熱性接着シート
US5406124A (en) * 1992-12-04 1995-04-11 Mitsui Toatsu Chemicals, Inc. Insulating adhesive tape, and lead frame and semiconductor device employing the tape
JP2996857B2 (ja) 1994-03-09 2000-01-11 住友ベークライト株式会社 低温加工性の優れた耐熱性樹脂組成物
JPH0959589A (ja) 1995-08-25 1997-03-04 Sony Corp ダイボンド材および半導体装置
JP3513829B2 (ja) 1997-09-18 2004-03-31 日立化成工業株式会社 接着フィルム
JP4743732B2 (ja) * 1999-04-09 2011-08-10 株式会社カネカ 線材被覆用接着性積層フィルム
JP4620834B2 (ja) 2000-04-04 2011-01-26 株式会社カネカ ボンディングシート
JP2001311053A (ja) 2000-04-28 2001-11-09 Kanegafuchi Chem Ind Co Ltd フィルム状接合部材
JP2002069420A (ja) 2000-08-30 2002-03-08 Kanegafuchi Chem Ind Co Ltd Ｆｐｃ補強板用接着性フィルム
JP2003027014A (ja) 2001-07-17 2003-01-29 Kanegafuchi Chem Ind Co Ltd 接着性フィルム
JP2003027034A (ja) 2001-07-17 2003-01-29 Kanegafuchi Chem Ind Co Ltd 接着性カバーフィルム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113488743A (zh) * 2021-06-23 2021-10-08 万向一二三股份公司 一种锂电池正极极耳绝缘涂层及其制备方法

Also Published As

Publication number Publication date
EP1624038B1 (en) 2008-06-11
US20060281872A1 (en) 2006-12-14
CN100475926C (zh) 2009-04-08
KR100672822B1 (ko) 2007-01-22
KR20050111352A (ko) 2005-11-24
JP4359242B2 (ja) 2009-11-04
WO2004101701A1 (ja) 2004-11-25
JPWO2004101701A1 (ja) 2006-07-13
DE602004014365D1 (de) 2008-07-24
EP1624038A1 (en) 2006-02-08
US7488532B2 (en) 2009-02-10
EP1624038A4 (en) 2006-05-31

Similar Documents

Publication Publication Date Title
TWI460249B (zh) 黏合組成物、黏合膜及製造半導體元件的方法
JP5502268B2 (ja) システムインパッケージ型半導体装置用の樹脂組成物セット
CN104347530B (zh) 带半导体密封用基体材料的密封材料、半导体装置及半导体装置的制造方法
JP5116152B2 (ja) 半導体装置製造用の樹脂組成物
JP6886770B2 (ja) 半導体素子密封用エポキシ樹脂組成物およびこれを使用して密封された半導体パッケージ
WO2008044496A1 (fr) Composition de résine liquide destinée à étanchéifier des éléments électroniques, et appareil électronique utilisant cette composition
KR20100113984A (ko) 열전도성 접착제
JP2016156002A (ja) 硬化性樹脂組成物及びそれを用いてなる封止材
JP2006233149A (ja) 低誘電膜形成素子封止用樹脂組成物及び半導体装置
JP2008248114A (ja) 接着剤組成物
CN103059787B (zh) 导热性粘合剂组合物、使用该组合物的粘合用片材以及导热性切割芯片贴膜
JP2008308618A (ja) 接着剤組成物及び接着フィルム
CN100475926C (zh) 粘接性树脂组合物和薄膜状粘接剂以及使用其的半导体装置
JP2000297199A (ja) エポキシ樹脂組成物並びにこのエポキシ樹脂組成物を用いた積層フィルム及び半導体装置
CN104934382A (zh) 附半导体密封用基材的密封材料、半导体装置、及半导体装置的制造方法
JP2009173744A (ja) アンダーフィル剤組成物
JP5183076B2 (ja) 半導体装置の製造方法
JP2000299414A (ja) フリップチップ型半導体装置
JP3672011B2 (ja) エポキシ樹脂組成物並びにこのエポキシ樹脂組成物を用いた積層フィルム及び半導体装置
Rabilloud Adhesives for electronics
JP3674675B2 (ja) フリップチップ型半導体装置用アンダーフィル材
JP5354721B2 (ja) アンダーフィル剤組成物
JP4445274B2 (ja) 樹脂組成物、フィルム状接着剤及び半導体パッケージ
JP2011132337A (ja) エポキシ樹脂組成物及び半導体装置
JP2005146104A (ja) 液状エポキシ樹脂組成物及び半導体装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090408

Termination date: 20160413

CF01 Termination of patent right due to non-payment of annual fee