CN1747917A - 在真空紫外下具有高透明度的耐辐射的有机化合物和其制备方法 - Google Patents

在真空紫外下具有高透明度的耐辐射的有机化合物和其制备方法 Download PDF

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Publication number
CN1747917A
CN1747917A CNA038052962A CN03805296A CN1747917A CN 1747917 A CN1747917 A CN 1747917A CN A038052962 A CNA038052962 A CN A038052962A CN 03805296 A CN03805296 A CN 03805296A CN 1747917 A CN1747917 A CN 1747917A
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CN
China
Prior art keywords
hydrogen
longer
adjacent
segment
ocf
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA038052962A
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English (en)
Chinese (zh)
Inventor
R·H·弗伦奇
D·J·琼斯
R·C·惠兰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of CN1747917A publication Critical patent/CN1747917A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C19/00—Acyclic saturated compounds containing halogen atoms
    • C07C19/08—Acyclic saturated compounds containing halogen atoms containing fluorine

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Medicinal Preparation (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CNA038052962A 2002-03-06 2003-03-06 在真空紫外下具有高透明度的耐辐射的有机化合物和其制备方法 Pending CN1747917A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36199902P 2002-03-06 2002-03-06
US60/361,999 2002-03-06

Publications (1)

Publication Number Publication Date
CN1747917A true CN1747917A (zh) 2006-03-15

Family

ID=27805109

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA038052962A Pending CN1747917A (zh) 2002-03-06 2003-03-06 在真空紫外下具有高透明度的耐辐射的有机化合物和其制备方法

Country Status (8)

Country Link
US (2) US20040009425A1 (https=)
EP (1) EP1480929A2 (https=)
JP (1) JP2005519346A (https=)
KR (1) KR20040096654A (https=)
CN (1) CN1747917A (https=)
AU (1) AU2003218015A1 (https=)
TW (1) TW200304044A (https=)
WO (1) WO2003077034A2 (https=)

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JP2005101498A (ja) * 2003-03-04 2005-04-14 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用浸漬液および該浸漬液を用いたレジストパターン形成方法
US20050164522A1 (en) * 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
US7763395B2 (en) * 2003-06-30 2010-07-27 Intel Corporation Radiation stability of polymer pellicles
US8149381B2 (en) 2003-08-26 2012-04-03 Nikon Corporation Optical element and exposure apparatus
US7316869B2 (en) 2003-08-26 2008-01-08 Intel Corporation Mounting a pellicle to a frame
TWI439823B (zh) 2003-08-26 2014-06-01 尼康股份有限公司 Optical components and exposure devices
EP2261740B1 (en) * 2003-08-29 2014-07-09 ASML Netherlands BV Lithographic apparatus
US6954256B2 (en) * 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
ITMI20031914A1 (it) 2003-10-03 2005-04-04 Solvay Solexis Spa Perfluoropolieteri.
JP2005136374A (ja) * 2003-10-06 2005-05-26 Matsushita Electric Ind Co Ltd 半導体製造装置及びそれを用いたパターン形成方法
US7352433B2 (en) 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1528432B1 (en) * 2003-10-28 2010-03-10 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
TWI259319B (en) * 2004-01-23 2006-08-01 Air Prod & Chem Immersion lithography fluids
US20050161644A1 (en) * 2004-01-23 2005-07-28 Peng Zhang Immersion lithography fluids
US7402377B2 (en) * 2004-02-20 2008-07-22 E. I. Du Pont De Nemours And Company Use of perfluoro-n-alkanes in vacuum ultraviolet applications
US7473512B2 (en) * 2004-03-09 2009-01-06 Az Electronic Materials Usa Corp. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
US20050202351A1 (en) * 2004-03-09 2005-09-15 Houlihan Francis M. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
US20050202252A1 (en) * 2004-03-12 2005-09-15 Alexander Tregub Use of alternative polymer materials for "soft" polymer pellicles
JP4355944B2 (ja) * 2004-04-16 2009-11-04 信越化学工業株式会社 パターン形成方法及びこれに用いるレジスト上層膜材料
KR101421915B1 (ko) * 2004-06-09 2014-07-22 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP2006039129A (ja) * 2004-07-26 2006-02-09 Sony Corp 液浸露光用積層構造、液浸露光方法、電子装置の製造方法及び電子装置
JP2006073967A (ja) * 2004-09-06 2006-03-16 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用浸漬液および該浸漬液を用いたレジストパターン形成方法
EP1720072B1 (en) * 2005-05-01 2019-06-05 Rohm and Haas Electronic Materials, L.L.C. Compositons and processes for immersion lithography
US7317507B2 (en) * 2005-05-03 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7495743B2 (en) 2005-09-30 2009-02-24 International Business Machines Corporation Immersion optical lithography system having protective optical coating
US7745102B2 (en) * 2006-05-26 2010-06-29 Massachusetts Institute Of Technology Immersion fluids for lithography
JP5731887B2 (ja) * 2011-04-21 2015-06-10 株式会社日本フォトサイエンス 液体処理装置
JP5929588B2 (ja) * 2012-07-26 2016-06-08 日本ゼオン株式会社 フッ素化炭化水素化合物の精製方法
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19619233A1 (de) * 1996-05-13 1997-11-20 Hoechst Ag Fluorhaltige Lösungsmittel für Lithiumbatterien mit erhöhter Sicherheit
US6824930B1 (en) * 1999-11-17 2004-11-30 E. I. Du Pont De Nemours And Company Ultraviolet and vacuum ultraviolet transparent polymer compositions and their uses
ITMI20010921A1 (it) * 2001-05-07 2002-11-07 Ausimont Spa Polimeri (per)fluorurati amorfi
AU2002342745A1 (en) * 2001-05-14 2002-11-25 E.I. Du Pont De Nemours And Company Fluoropolymer compositions comprising a fluor-containing liquid

Also Published As

Publication number Publication date
WO2003077034A2 (en) 2003-09-18
EP1480929A2 (en) 2004-12-01
US20040009425A1 (en) 2004-01-15
WO2003077034A3 (en) 2004-03-25
US20050145821A1 (en) 2005-07-07
AU2003218015A1 (en) 2003-09-22
AU2003218015A8 (en) 2003-09-22
TW200304044A (en) 2003-09-16
JP2005519346A (ja) 2005-06-30
KR20040096654A (ko) 2004-11-16

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C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication