KR20040096654A - 진공 자외선에서 고투명도를 갖는 불소 함유 화합물 - Google Patents
진공 자외선에서 고투명도를 갖는 불소 함유 화합물 Download PDFInfo
- Publication number
- KR20040096654A KR20040096654A KR10-2004-7013793A KR20047013793A KR20040096654A KR 20040096654 A KR20040096654 A KR 20040096654A KR 20047013793 A KR20047013793 A KR 20047013793A KR 20040096654 A KR20040096654 A KR 20040096654A
- Authority
- KR
- South Korea
- Prior art keywords
- bonds
- longer
- hydrogen
- ocf
- adjacent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000011737 fluorine Substances 0.000 title claims description 49
- 229910052731 fluorine Inorganic materials 0.000 title claims description 49
- 150000001875 compounds Chemical class 0.000 title claims description 45
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 title description 32
- 239000000203 mixture Substances 0.000 claims abstract description 72
- 230000005855 radiation Effects 0.000 claims abstract description 55
- 239000001257 hydrogen Substances 0.000 claims description 72
- 229910052739 hydrogen Inorganic materials 0.000 claims description 72
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 68
- 238000000034 method Methods 0.000 claims description 62
- 239000001301 oxygen Substances 0.000 claims description 62
- 229910052760 oxygen Inorganic materials 0.000 claims description 62
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 58
- 239000007788 liquid Substances 0.000 claims description 54
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 46
- 150000002431 hydrogen Chemical class 0.000 claims description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 34
- 229910052757 nitrogen Inorganic materials 0.000 claims description 32
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 22
- 239000002808 molecular sieve Substances 0.000 claims description 22
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 claims description 22
- 238000002835 absorbance Methods 0.000 claims description 20
- 125000004122 cyclic group Chemical group 0.000 claims description 20
- 230000005670 electromagnetic radiation Effects 0.000 claims description 15
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 claims description 13
- PQMAKJUXOOVROI-UHFFFAOYSA-N 2,2,3,3,5,5,6,6-octafluoro-4-(trifluoromethyl)morpholine Chemical compound FC(F)(F)N1C(F)(F)C(F)(F)OC(F)(F)C1(F)F PQMAKJUXOOVROI-UHFFFAOYSA-N 0.000 claims description 12
- 150000001412 amines Chemical class 0.000 claims description 12
- 125000004432 carbon atom Chemical group C* 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 7
- 150000004812 organic fluorine compounds Chemical class 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 17
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 150000003254 radicals Chemical class 0.000 description 32
- 210000004027 cell Anatomy 0.000 description 30
- 239000002904 solvent Substances 0.000 description 22
- 239000000463 material Substances 0.000 description 20
- 238000000206 photolithography Methods 0.000 description 20
- -1 hydroxyl radicals Chemical class 0.000 description 14
- 238000010926 purge Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 13
- 239000007789 gas Substances 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 150000002894 organic compounds Chemical class 0.000 description 12
- 125000006850 spacer group Chemical group 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- 239000010409 thin film Substances 0.000 description 11
- 238000002834 transmittance Methods 0.000 description 11
- 238000007654 immersion Methods 0.000 description 10
- 238000001035 drying Methods 0.000 description 9
- 238000000605 extraction Methods 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 9
- 229910004261 CaF 2 Inorganic materials 0.000 description 8
- 229910000856 hastalloy Inorganic materials 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 229920006362 Teflon® Polymers 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000012530 fluid Substances 0.000 description 7
- 230000035699 permeability Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 238000011109 contamination Methods 0.000 description 5
- 239000002274 desiccant Substances 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000013557 residual solvent Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229920002313 fluoropolymer Polymers 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000003109 Karl Fischer titration Methods 0.000 description 3
- NNJVILVZKWQKPM-UHFFFAOYSA-N Lidocaine Chemical compound CCN(CC)CC(=O)NC1=C(C)C=CC=C1C NNJVILVZKWQKPM-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000011481 absorbance measurement Methods 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- 238000000671 immersion lithography Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000010702 perfluoropolyether Substances 0.000 description 2
- 238000006303 photolysis reaction Methods 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- 229910010082 LiAlH Inorganic materials 0.000 description 1
- 229940123973 Oxygen scavenger Drugs 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006355 Tefzel Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical compound C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 238000004508 fractional distillation Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000007954 hypoxia Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 125000002346 iodo group Chemical group I* 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007539 photo-oxidation reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 210000002381 plasma Anatomy 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920005553 polystyrene-acrylate Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000935 solvent evaporation Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
- DBGVGMSCBYYSLD-UHFFFAOYSA-N tributylstannane Chemical compound CCCC[SnH](CCCC)CCCC DBGVGMSCBYYSLD-UHFFFAOYSA-N 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C19/00—Acyclic saturated compounds containing halogen atoms
- C07C19/08—Acyclic saturated compounds containing halogen atoms containing fluorine
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Medicinal Preparation (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US36199902P | 2002-03-06 | 2002-03-06 | |
| US60/361,999 | 2002-03-06 | ||
| PCT/US2003/007091 WO2003077034A2 (en) | 2002-03-06 | 2003-03-06 | Fluorine-containing compounds with high transparency in the vacuum ultraviolet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20040096654A true KR20040096654A (ko) | 2004-11-16 |
Family
ID=27805109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2004-7013793A Withdrawn KR20040096654A (ko) | 2002-03-06 | 2003-03-06 | 진공 자외선에서 고투명도를 갖는 불소 함유 화합물 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US20040009425A1 (https=) |
| EP (1) | EP1480929A2 (https=) |
| JP (1) | JP2005519346A (https=) |
| KR (1) | KR20040096654A (https=) |
| CN (1) | CN1747917A (https=) |
| AU (1) | AU2003218015A1 (https=) |
| TW (1) | TW200304044A (https=) |
| WO (1) | WO2003077034A2 (https=) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005101498A (ja) * | 2003-03-04 | 2005-04-14 | Tokyo Ohka Kogyo Co Ltd | 液浸露光プロセス用浸漬液および該浸漬液を用いたレジストパターン形成方法 |
| US20050164522A1 (en) * | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
| US7763395B2 (en) * | 2003-06-30 | 2010-07-27 | Intel Corporation | Radiation stability of polymer pellicles |
| US8149381B2 (en) | 2003-08-26 | 2012-04-03 | Nikon Corporation | Optical element and exposure apparatus |
| US7316869B2 (en) | 2003-08-26 | 2008-01-08 | Intel Corporation | Mounting a pellicle to a frame |
| TWI439823B (zh) | 2003-08-26 | 2014-06-01 | 尼康股份有限公司 | Optical components and exposure devices |
| EP2261740B1 (en) * | 2003-08-29 | 2014-07-09 | ASML Netherlands BV | Lithographic apparatus |
| US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
| ITMI20031914A1 (it) | 2003-10-03 | 2005-04-04 | Solvay Solexis Spa | Perfluoropolieteri. |
| JP2005136374A (ja) * | 2003-10-06 | 2005-05-26 | Matsushita Electric Ind Co Ltd | 半導体製造装置及びそれを用いたパターン形成方法 |
| US7352433B2 (en) | 2003-10-28 | 2008-04-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1528432B1 (en) * | 2003-10-28 | 2010-03-10 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7460206B2 (en) | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
| TWI259319B (en) * | 2004-01-23 | 2006-08-01 | Air Prod & Chem | Immersion lithography fluids |
| US20050161644A1 (en) * | 2004-01-23 | 2005-07-28 | Peng Zhang | Immersion lithography fluids |
| US7402377B2 (en) * | 2004-02-20 | 2008-07-22 | E. I. Du Pont De Nemours And Company | Use of perfluoro-n-alkanes in vacuum ultraviolet applications |
| US7473512B2 (en) * | 2004-03-09 | 2009-01-06 | Az Electronic Materials Usa Corp. | Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof |
| US20050202351A1 (en) * | 2004-03-09 | 2005-09-15 | Houlihan Francis M. | Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof |
| US20050202252A1 (en) * | 2004-03-12 | 2005-09-15 | Alexander Tregub | Use of alternative polymer materials for "soft" polymer pellicles |
| JP4355944B2 (ja) * | 2004-04-16 | 2009-11-04 | 信越化学工業株式会社 | パターン形成方法及びこれに用いるレジスト上層膜材料 |
| KR101421915B1 (ko) * | 2004-06-09 | 2014-07-22 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| JP2006039129A (ja) * | 2004-07-26 | 2006-02-09 | Sony Corp | 液浸露光用積層構造、液浸露光方法、電子装置の製造方法及び電子装置 |
| JP2006073967A (ja) * | 2004-09-06 | 2006-03-16 | Tokyo Ohka Kogyo Co Ltd | 液浸露光プロセス用浸漬液および該浸漬液を用いたレジストパターン形成方法 |
| EP1720072B1 (en) * | 2005-05-01 | 2019-06-05 | Rohm and Haas Electronic Materials, L.L.C. | Compositons and processes for immersion lithography |
| US7317507B2 (en) * | 2005-05-03 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7495743B2 (en) | 2005-09-30 | 2009-02-24 | International Business Machines Corporation | Immersion optical lithography system having protective optical coating |
| US7745102B2 (en) * | 2006-05-26 | 2010-06-29 | Massachusetts Institute Of Technology | Immersion fluids for lithography |
| JP5731887B2 (ja) * | 2011-04-21 | 2015-06-10 | 株式会社日本フォトサイエンス | 液体処理装置 |
| JP5929588B2 (ja) * | 2012-07-26 | 2016-06-08 | 日本ゼオン株式会社 | フッ素化炭化水素化合物の精製方法 |
| US9017934B2 (en) | 2013-03-08 | 2015-04-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist defect reduction system and method |
| US9256128B2 (en) | 2013-03-12 | 2016-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for manufacturing semiconductor device |
| US9502231B2 (en) | 2013-03-12 | 2016-11-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist layer and method |
| US9354521B2 (en) | 2013-03-12 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
| US9110376B2 (en) | 2013-03-12 | 2015-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
| US9175173B2 (en) | 2013-03-12 | 2015-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Unlocking layer and method |
| US9245751B2 (en) | 2013-03-12 | 2016-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-reflective layer and method |
| US9543147B2 (en) | 2013-03-12 | 2017-01-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method of manufacture |
| US8932799B2 (en) | 2013-03-12 | 2015-01-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
| US9117881B2 (en) | 2013-03-15 | 2015-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conductive line system and process |
| US9341945B2 (en) | 2013-08-22 | 2016-05-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method of formation and use |
| US10036953B2 (en) | 2013-11-08 | 2018-07-31 | Taiwan Semiconductor Manufacturing Company | Photoresist system and method |
| US10095113B2 (en) | 2013-12-06 | 2018-10-09 | Taiwan Semiconductor Manufacturing Company | Photoresist and method |
| US9761449B2 (en) | 2013-12-30 | 2017-09-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gap filling materials and methods |
| US9599896B2 (en) | 2014-03-14 | 2017-03-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist system and method |
| US9581908B2 (en) | 2014-05-16 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist and method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19619233A1 (de) * | 1996-05-13 | 1997-11-20 | Hoechst Ag | Fluorhaltige Lösungsmittel für Lithiumbatterien mit erhöhter Sicherheit |
| US6824930B1 (en) * | 1999-11-17 | 2004-11-30 | E. I. Du Pont De Nemours And Company | Ultraviolet and vacuum ultraviolet transparent polymer compositions and their uses |
| ITMI20010921A1 (it) * | 2001-05-07 | 2002-11-07 | Ausimont Spa | Polimeri (per)fluorurati amorfi |
| AU2002342745A1 (en) * | 2001-05-14 | 2002-11-25 | E.I. Du Pont De Nemours And Company | Fluoropolymer compositions comprising a fluor-containing liquid |
-
2003
- 2003-03-06 US US10/382,695 patent/US20040009425A1/en not_active Abandoned
- 2003-03-06 CN CNA038052962A patent/CN1747917A/zh active Pending
- 2003-03-06 AU AU2003218015A patent/AU2003218015A1/en not_active Abandoned
- 2003-03-06 TW TW092104812A patent/TW200304044A/zh unknown
- 2003-03-06 KR KR10-2004-7013793A patent/KR20040096654A/ko not_active Withdrawn
- 2003-03-06 US US10/501,968 patent/US20050145821A1/en not_active Abandoned
- 2003-03-06 JP JP2003575187A patent/JP2005519346A/ja active Pending
- 2003-03-06 WO PCT/US2003/007091 patent/WO2003077034A2/en not_active Ceased
- 2003-03-06 EP EP03713995A patent/EP1480929A2/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| WO2003077034A2 (en) | 2003-09-18 |
| EP1480929A2 (en) | 2004-12-01 |
| US20040009425A1 (en) | 2004-01-15 |
| WO2003077034A3 (en) | 2004-03-25 |
| US20050145821A1 (en) | 2005-07-07 |
| AU2003218015A1 (en) | 2003-09-22 |
| CN1747917A (zh) | 2006-03-15 |
| AU2003218015A8 (en) | 2003-09-22 |
| TW200304044A (en) | 2003-09-16 |
| JP2005519346A (ja) | 2005-06-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20040096654A (ko) | 진공 자외선에서 고투명도를 갖는 불소 함유 화합물 | |
| US7589242B2 (en) | Use of highly purified hydrocarbons in vacuum ultraviolet applications | |
| US20090079953A1 (en) | Use of perfluoroalkanes in vacuum ultraviolet applications | |
| US20080124660A1 (en) | HIGHLY PURIFIED LIQUID PERFLUORO-n-ALKANES AND METHOD FOR PREPARING | |
| US7300743B2 (en) | Radiation durable organic compounds with high transparency in the vacuum ultraviolet, and method for preparing | |
| JP5608234B2 (ja) | ペリクル膜 | |
| US20040137361A1 (en) | Polymer-liquid compositions useful in ultraviolet and vacuum ultraviolet uses | |
| US7435528B2 (en) | Processes and devices using polycyclic fluoroalkanes in vacuum and deep ultraviolet applications | |
| KR20080070681A (ko) | 알칸 침액의 재순환 장치 및 이것의 사용 방법 | |
| US7771919B2 (en) | High refractive index fluids for immersion lithography | |
| WO2005013009A1 (en) | Use of perfluoro-n-alkanes in vacuum ultraviolet applications | |
| Furukawa et al. | High-refractive index material design for ArF immersion lithography | |
| US20070269751A1 (en) | Immersion Liquid for Liquid Immersion Lithography Process and Method for Forming Resist Pattern Using Such Immersion Liquid | |
| US7078575B1 (en) | Processes for preparing high purity polycyclic fluoroalkanes | |
| US7586103B2 (en) | High refractive index fluids for immersion lithography | |
| KR20030095405A (ko) | 자외선 및 진공 자외선 용도에서 유용한 중합체-액체 조성물 | |
| JP2006210782A (ja) | 液浸露光用液体および液浸露光方法 | |
| CN1981242A (zh) | 紫外透明的链烷与在真空中使用它们的方法以及深紫外应用 | |
| JP2008218922A (ja) | 液浸油の精製方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20040903 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |