JP2005519346A - 真空紫外で高い透明性を有するフッ素含有化合物 - Google Patents

真空紫外で高い透明性を有するフッ素含有化合物 Download PDF

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Publication number
JP2005519346A
JP2005519346A JP2003575187A JP2003575187A JP2005519346A JP 2005519346 A JP2005519346 A JP 2005519346A JP 2003575187 A JP2003575187 A JP 2003575187A JP 2003575187 A JP2003575187 A JP 2003575187A JP 2005519346 A JP2005519346 A JP 2005519346A
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Japan
Prior art keywords
hydrogen
ocf
adjacent
fluorine
ppm
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Pending
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JP2003575187A
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Japanese (ja)
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JP2005519346A5 (https=
Inventor
フレンシユ，ロジヤー・ハークエイル
ジヨーンズ，デイビツド・ジヨセフ
ウエランド，ロバート・クレイトン
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EIDP Inc
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EI Du Pont de Nemours and Co
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Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of JP2005519346A publication Critical patent/JP2005519346A/ja
Publication of JP2005519346A5 publication Critical patent/JP2005519346A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C19/00—Acyclic saturated compounds containing halogen atoms
    • C07C19/08—Acyclic saturated compounds containing halogen atoms containing fluorine

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Medicinal Preparation (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2003575187A 2002-03-06 2003-03-06 真空紫外で高い透明性を有するフッ素含有化合物 Pending JP2005519346A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36199902P 2002-03-06 2002-03-06
PCT/US2003/007091 WO2003077034A2 (en) 2002-03-06 2003-03-06 Fluorine-containing compounds with high transparency in the vacuum ultraviolet

Publications (2)

Publication Number Publication Date
JP2005519346A true JP2005519346A (ja) 2005-06-30
JP2005519346A5 JP2005519346A5 (https=) 2006-03-09

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ID=27805109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003575187A Pending JP2005519346A (ja) 2002-03-06 2003-03-06 真空紫外で高い透明性を有するフッ素含有化合物

Country Status (8)

Country Link
US (2) US20040009425A1 (https=)
EP (1) EP1480929A2 (https=)
JP (1) JP2005519346A (https=)
KR (1) KR20040096654A (https=)
CN (1) CN1747917A (https=)
AU (1) AU2003218015A1 (https=)
TW (1) TW200304044A (https=)
WO (1) WO2003077034A2 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006039129A (ja) * 2004-07-26 2006-02-09 Sony Corp 液浸露光用積層構造、液浸露光方法、電子装置の製造方法及び電子装置
JP2012223732A (ja) * 2011-04-21 2012-11-15 Photoscience Japan Corp 液体処理装置
JP2014024785A (ja) * 2012-07-26 2014-02-06 Nippon Zeon Co Ltd フッ素化炭化水素化合物の精製方法

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005101498A (ja) * 2003-03-04 2005-04-14 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用浸漬液および該浸漬液を用いたレジストパターン形成方法
US20050164522A1 (en) * 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
US7763395B2 (en) * 2003-06-30 2010-07-27 Intel Corporation Radiation stability of polymer pellicles
US8149381B2 (en) 2003-08-26 2012-04-03 Nikon Corporation Optical element and exposure apparatus
US7316869B2 (en) 2003-08-26 2008-01-08 Intel Corporation Mounting a pellicle to a frame
TWI439823B (zh) 2003-08-26 2014-06-01 尼康股份有限公司 Optical components and exposure devices
EP2261740B1 (en) * 2003-08-29 2014-07-09 ASML Netherlands BV Lithographic apparatus
US6954256B2 (en) * 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
ITMI20031914A1 (it) 2003-10-03 2005-04-04 Solvay Solexis Spa Perfluoropolieteri.
JP2005136374A (ja) * 2003-10-06 2005-05-26 Matsushita Electric Ind Co Ltd 半導体製造装置及びそれを用いたパターン形成方法
US7352433B2 (en) 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1528432B1 (en) * 2003-10-28 2010-03-10 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
TWI259319B (en) * 2004-01-23 2006-08-01 Air Prod & Chem Immersion lithography fluids
US20050161644A1 (en) * 2004-01-23 2005-07-28 Peng Zhang Immersion lithography fluids
US7402377B2 (en) * 2004-02-20 2008-07-22 E. I. Du Pont De Nemours And Company Use of perfluoro-n-alkanes in vacuum ultraviolet applications
US7473512B2 (en) * 2004-03-09 2009-01-06 Az Electronic Materials Usa Corp. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
US20050202351A1 (en) * 2004-03-09 2005-09-15 Houlihan Francis M. Process of imaging a deep ultraviolet photoresist with a top coating and materials thereof
US20050202252A1 (en) * 2004-03-12 2005-09-15 Alexander Tregub Use of alternative polymer materials for "soft" polymer pellicles
JP4355944B2 (ja) * 2004-04-16 2009-11-04 信越化学工業株式会社 パターン形成方法及びこれに用いるレジスト上層膜材料
KR101421915B1 (ko) * 2004-06-09 2014-07-22 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP2006073967A (ja) * 2004-09-06 2006-03-16 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用浸漬液および該浸漬液を用いたレジストパターン形成方法
EP1720072B1 (en) * 2005-05-01 2019-06-05 Rohm and Haas Electronic Materials, L.L.C. Compositons and processes for immersion lithography
US7317507B2 (en) * 2005-05-03 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7495743B2 (en) 2005-09-30 2009-02-24 International Business Machines Corporation Immersion optical lithography system having protective optical coating
US7745102B2 (en) * 2006-05-26 2010-06-29 Massachusetts Institute Of Technology Immersion fluids for lithography
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19619233A1 (de) * 1996-05-13 1997-11-20 Hoechst Ag Fluorhaltige Lösungsmittel für Lithiumbatterien mit erhöhter Sicherheit
US6824930B1 (en) * 1999-11-17 2004-11-30 E. I. Du Pont De Nemours And Company Ultraviolet and vacuum ultraviolet transparent polymer compositions and their uses
ITMI20010921A1 (it) * 2001-05-07 2002-11-07 Ausimont Spa Polimeri (per)fluorurati amorfi
AU2002342745A1 (en) * 2001-05-14 2002-11-25 E.I. Du Pont De Nemours And Company Fluoropolymer compositions comprising a fluor-containing liquid

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006039129A (ja) * 2004-07-26 2006-02-09 Sony Corp 液浸露光用積層構造、液浸露光方法、電子装置の製造方法及び電子装置
JP2012223732A (ja) * 2011-04-21 2012-11-15 Photoscience Japan Corp 液体処理装置
JP2014024785A (ja) * 2012-07-26 2014-02-06 Nippon Zeon Co Ltd フッ素化炭化水素化合物の精製方法

Also Published As

Publication number Publication date
WO2003077034A2 (en) 2003-09-18
EP1480929A2 (en) 2004-12-01
US20040009425A1 (en) 2004-01-15
WO2003077034A3 (en) 2004-03-25
US20050145821A1 (en) 2005-07-07
AU2003218015A1 (en) 2003-09-22
CN1747917A (zh) 2006-03-15
AU2003218015A8 (en) 2003-09-22
TW200304044A (en) 2003-09-16
KR20040096654A (ko) 2004-11-16

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