CN1695203A - 堆叠有机存储器件及其操作与制备方法 - Google Patents
堆叠有机存储器件及其操作与制备方法 Download PDFInfo
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- CN1695203A CN1695203A CNA038249634A CN03824963A CN1695203A CN 1695203 A CN1695203 A CN 1695203A CN A038249634 A CNA038249634 A CN A038249634A CN 03824963 A CN03824963 A CN 03824963A CN 1695203 A CN1695203 A CN 1695203A
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
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- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5664—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
- G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
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Abstract
Description
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/287,612 | 2002-11-04 | ||
US10/287,612 US6870183B2 (en) | 2002-11-04 | 2002-11-04 | Stacked organic memory devices and methods of operating and fabricating |
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CN (1) | CN100538894C (zh) |
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2002
- 2002-11-04 US US10/287,612 patent/US6870183B2/en not_active Expired - Lifetime
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- 2003-07-10 KR KR1020057007638A patent/KR100988060B1/ko not_active IP Right Cessation
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- 2003-07-10 DE DE60331462T patent/DE60331462D1/de not_active Expired - Lifetime
- 2003-07-10 WO PCT/US2003/021679 patent/WO2004042737A1/en active Application Filing
- 2003-07-10 JP JP2004549920A patent/JP4995422B2/ja not_active Expired - Fee Related
- 2003-07-10 EP EP03810745A patent/EP1559109B1/en not_active Expired - Lifetime
- 2003-07-10 AU AU2003261140A patent/AU2003261140A1/en not_active Abandoned
- 2003-08-14 TW TW092122325A patent/TW200408152A/zh unknown
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101427322B (zh) * | 2006-03-22 | 2011-09-07 | 波利Ic有限及两合公司 | 对电路进行编程的方法以及电路 |
CN101226771B (zh) * | 2007-01-19 | 2011-05-11 | 旺宏电子股份有限公司 | 使用多存储器层的多层单元存储器结构及其制造方法 |
CN104699658A (zh) * | 2013-12-03 | 2015-06-10 | 罗伯特·博世有限公司 | 用于求得基于数据的函数模型的梯度的方法和装置 |
CN104699658B (zh) * | 2013-12-03 | 2019-09-24 | 罗伯特·博世有限公司 | 用于求得基于数据的函数模型的梯度的方法和装置 |
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TW200408152A (en) | 2004-05-16 |
JP2006505938A (ja) | 2006-02-16 |
DE60331462D1 (de) | 2010-04-08 |
AU2003261140A1 (en) | 2004-06-07 |
US8003436B2 (en) | 2011-08-23 |
KR20050067214A (ko) | 2005-06-30 |
CN100538894C (zh) | 2009-09-09 |
US20040084670A1 (en) | 2004-05-06 |
EP1559109A1 (en) | 2005-08-03 |
US6979837B2 (en) | 2005-12-27 |
US20040217347A1 (en) | 2004-11-04 |
US6870183B2 (en) | 2005-03-22 |
EP1559109B1 (en) | 2010-02-24 |
JP4995422B2 (ja) | 2012-08-08 |
WO2004042737A1 (en) | 2004-05-21 |
KR100988060B1 (ko) | 2010-10-18 |
US20090081824A1 (en) | 2009-03-26 |
US7465956B1 (en) | 2008-12-16 |
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