CN100538894C - 有机存储器件及其制备方法和系统 - Google Patents
有机存储器件及其制备方法和系统 Download PDFInfo
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- CN100538894C CN100538894C CNB038249634A CN03824963A CN100538894C CN 100538894 C CN100538894 C CN 100538894C CN B038249634 A CNB038249634 A CN B038249634A CN 03824963 A CN03824963 A CN 03824963A CN 100538894 C CN100538894 C CN 100538894C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5664—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using organic memory material storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
- G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/856—Thermoelectric active materials comprising organic compositions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/143—Polyacetylene; Derivatives thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/287,612 | 2002-11-04 | ||
US10/287,612 US6870183B2 (en) | 2002-11-04 | 2002-11-04 | Stacked organic memory devices and methods of operating and fabricating |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1695203A CN1695203A (zh) | 2005-11-09 |
CN100538894C true CN100538894C (zh) | 2009-09-09 |
Family
ID=32175729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038249634A Expired - Fee Related CN100538894C (zh) | 2002-11-04 | 2003-07-10 | 有机存储器件及其制备方法和系统 |
Country Status (9)
Country | Link |
---|---|
US (4) | US6870183B2 (zh) |
EP (1) | EP1559109B1 (zh) |
JP (1) | JP4995422B2 (zh) |
KR (1) | KR100988060B1 (zh) |
CN (1) | CN100538894C (zh) |
AU (1) | AU2003261140A1 (zh) |
DE (1) | DE60331462D1 (zh) |
TW (1) | TW200408152A (zh) |
WO (1) | WO2004042737A1 (zh) |
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US20040026121A1 (en) * | 2000-09-22 | 2004-02-12 | Adolf Bernds | Electrode and/or conductor track for organic components and production method thereof |
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DE10061297C2 (de) * | 2000-12-08 | 2003-05-28 | Siemens Ag | Verfahren zur Sturkturierung eines OFETs |
DE10063721A1 (de) * | 2000-12-20 | 2002-07-11 | Merck Patent Gmbh | Organischer Halbleiter, Herstellungsverfahren dazu und Verwendungen |
DE10105914C1 (de) | 2001-02-09 | 2002-10-10 | Siemens Ag | Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung |
JP2005509200A (ja) * | 2001-03-26 | 2005-04-07 | シーメンス アクチエンゲゼルシヤフト | 少なくとも2つの有機電子構成エレメントを有する装置、および該装置のための製造方法 |
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RU2210834C2 (ru) * | 1998-01-28 | 2003-08-20 | Тин Филм Электроникс Аса | Способ формирования электропроводящих и/или полупроводниковых трехмерных структур, способ уничтожения этих структур и генератор/модулятор электрического поля для использования в способе формирования |
NO307360B1 (no) * | 1998-02-25 | 2000-03-20 | Thin Film Electronics Asa | Flersjikts matriseadresserbar logisk innretning med flere individuelt matriseadresserbare og stablede tynnsjikt av et aktivt materiale |
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JP2002302516A (ja) * | 2001-04-03 | 2002-10-18 | Fuji Photo Film Co Ltd | 新規ポリマーおよびそれを用いた発光素子 |
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-
2002
- 2002-11-04 US US10/287,612 patent/US6870183B2/en not_active Expired - Lifetime
-
2003
- 2003-07-10 AU AU2003261140A patent/AU2003261140A1/en not_active Abandoned
- 2003-07-10 KR KR1020057007638A patent/KR100988060B1/ko not_active IP Right Cessation
- 2003-07-10 JP JP2004549920A patent/JP4995422B2/ja not_active Expired - Fee Related
- 2003-07-10 DE DE60331462T patent/DE60331462D1/de not_active Expired - Lifetime
- 2003-07-10 EP EP03810745A patent/EP1559109B1/en not_active Expired - Lifetime
- 2003-07-10 CN CNB038249634A patent/CN100538894C/zh not_active Expired - Fee Related
- 2003-07-10 WO PCT/US2003/021679 patent/WO2004042737A1/en active Application Filing
- 2003-08-14 TW TW092122325A patent/TW200408152A/zh unknown
-
2004
- 2004-05-19 US US10/848,679 patent/US6979837B2/en not_active Expired - Lifetime
-
2005
- 2005-10-17 US US11/251,999 patent/US7465956B1/en not_active Expired - Fee Related
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2008
- 2008-12-03 US US12/327,040 patent/US8003436B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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WO2004042737A1 (en) | 2004-05-21 |
KR100988060B1 (ko) | 2010-10-18 |
US20040084670A1 (en) | 2004-05-06 |
JP2006505938A (ja) | 2006-02-16 |
US7465956B1 (en) | 2008-12-16 |
AU2003261140A1 (en) | 2004-06-07 |
US6979837B2 (en) | 2005-12-27 |
TW200408152A (en) | 2004-05-16 |
US20090081824A1 (en) | 2009-03-26 |
JP4995422B2 (ja) | 2012-08-08 |
US20040217347A1 (en) | 2004-11-04 |
US8003436B2 (en) | 2011-08-23 |
KR20050067214A (ko) | 2005-06-30 |
EP1559109A1 (en) | 2005-08-03 |
EP1559109B1 (en) | 2010-02-24 |
CN1695203A (zh) | 2005-11-09 |
US6870183B2 (en) | 2005-03-22 |
DE60331462D1 (de) | 2010-04-08 |
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