CN1685772B - 有机el元件及有机el面板 - Google Patents
有机el元件及有机el面板 Download PDFInfo
- Publication number
- CN1685772B CN1685772B CN03823511.0A CN03823511A CN1685772B CN 1685772 B CN1685772 B CN 1685772B CN 03823511 A CN03823511 A CN 03823511A CN 1685772 B CN1685772 B CN 1685772B
- Authority
- CN
- China
- Prior art keywords
- organic
- metal electrode
- layer
- nesa coating
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 57
- 239000002184 metal Substances 0.000 claims abstract description 57
- 230000003287 optical effect Effects 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000000576 coating method Methods 0.000 claims description 41
- 239000011248 coating agent Substances 0.000 claims description 40
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 8
- 150000002739 metals Chemical class 0.000 claims description 5
- 241001025261 Neoraja caerulea Species 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 3
- 230000000593 degrading effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 86
- 238000006243 chemical reaction Methods 0.000 description 13
- 230000005540 biological transmission Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 230000027756 respiratory electron transport chain Effects 0.000 description 10
- 238000003475 lamination Methods 0.000 description 9
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 6
- 239000012528 membrane Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001342 alkaline earth metals Chemical group 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000011430 maximum method Methods 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2003/007565 WO2004112441A1 (ja) | 2002-03-18 | 2003-06-13 | 有機el素子および有機elパネル |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1685772A CN1685772A (zh) | 2005-10-19 |
CN1685772B true CN1685772B (zh) | 2011-05-11 |
Family
ID=34401431
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN03823511.0A Expired - Fee Related CN1685772B (zh) | 2003-06-13 | 2003-06-13 | 有机el元件及有机el面板 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7615921B2 (zh) |
CN (1) | CN1685772B (zh) |
AU (1) | AU2003241652A1 (zh) |
DE (1) | DE10393385T5 (zh) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100482026C (zh) * | 2004-03-05 | 2009-04-22 | 出光兴产株式会社 | 有机电致发光元件以及显示装置 |
DE102004022004B4 (de) * | 2004-05-03 | 2007-07-05 | Novaled Ag | Schichtanordnung für eine organische lichtemittierende Diode |
EP1782487B1 (en) * | 2004-08-03 | 2013-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and light-emitting device |
CN101027942B (zh) | 2004-09-24 | 2010-06-16 | 株式会社半导体能源研究所 | 发光器件 |
CN101032040B (zh) * | 2004-09-30 | 2012-05-30 | 株式会社半导体能源研究所 | 发光元件和发光设备 |
JP4797361B2 (ja) * | 2004-11-05 | 2011-10-19 | 富士電機株式会社 | 有機el素子 |
WO2006049323A1 (en) | 2004-11-05 | 2006-05-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and light emitting device using the same |
JP2006154169A (ja) * | 2004-11-29 | 2006-06-15 | Seiko Epson Corp | 電気光学素子の製造方法、電気光学装置 |
JP4939809B2 (ja) | 2005-01-21 | 2012-05-30 | 株式会社半導体エネルギー研究所 | 発光装置 |
US8269227B2 (en) * | 2005-06-09 | 2012-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic device |
EP1750310A3 (en) * | 2005-08-03 | 2009-07-15 | Samsung Electro-Mechanics Co., Ltd. | Omni-directional reflector and light emitting diode adopting the same |
JP4658877B2 (ja) * | 2006-08-07 | 2011-03-23 | 株式会社 日立ディスプレイズ | 有機発光表示装置 |
US7847790B2 (en) * | 2006-08-30 | 2010-12-07 | Elan Home Systems | Interactive touchpad |
TWI308805B (en) * | 2006-09-22 | 2009-04-11 | Innolux Display Corp | Active matrix oled and fabricating method incorporating the same |
JP2009026619A (ja) * | 2007-07-20 | 2009-02-05 | Hitachi Displays Ltd | 有機el表示装置 |
JP5440064B2 (ja) * | 2008-10-21 | 2014-03-12 | 東芝ライテック株式会社 | 照明装置 |
JP5327601B2 (ja) | 2008-12-12 | 2013-10-30 | 東芝ライテック株式会社 | 発光モジュールおよび照明装置 |
US8408724B2 (en) * | 2008-12-26 | 2013-04-02 | Toshiba Lighting & Technology Corporation | Light source module and lighting apparatus |
JP4846873B2 (ja) | 2009-06-11 | 2011-12-28 | パナソニック株式会社 | 有機elディスプレイ |
WO2011001614A1 (ja) | 2009-06-29 | 2011-01-06 | パナソニック株式会社 | 有機elディスプレイパネル |
EP2365525A3 (en) * | 2010-03-12 | 2013-05-29 | Toshiba Lighting & Technology Corporation | Illumination apparatus having an array of red and phosphour coated blue LEDs |
CN102440073B (zh) | 2010-08-10 | 2014-10-08 | 松下电器产业株式会社 | 有机发光元件、有机发光装置、有机显示面板、有机显示装置以及有机发光元件的制造方法 |
KR102051976B1 (ko) | 2011-12-28 | 2020-01-08 | 오지 홀딩스 가부시키가이샤 | 유기발광다이오드, 유기발광다이오드의 제조방법, 화상표시장치 및 조명장치 |
JP5687651B2 (ja) | 2012-03-24 | 2015-03-18 | 株式会社東芝 | 有機電界発光素子、照明装置及び有機電界発光素子の製造方法 |
KR102374181B1 (ko) * | 2012-04-09 | 2022-03-15 | 미쯔비시 케미컬 주식회사 | 유기 전계 발광 소자용 조성물 및 유기 전계 발광 소자 |
CN102653413B (zh) * | 2012-05-11 | 2013-11-13 | 北京化工大学 | 锌掺杂氧化铟纳米气敏材料及其制备方法 |
KR20140057852A (ko) * | 2012-11-05 | 2014-05-14 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
KR102016072B1 (ko) | 2012-12-28 | 2019-08-30 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR102061790B1 (ko) | 2013-02-05 | 2020-02-12 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치의 투명전극 제조방법 및 그 투명전극을 구비한 유기 발광 표시 장치 |
CN104183735A (zh) * | 2013-05-23 | 2014-12-03 | 海洋王照明科技股份有限公司 | 一种阳极及其制备方法和有机电致发光器件 |
JP2015012155A (ja) * | 2013-06-28 | 2015-01-19 | 東芝ライテック株式会社 | 発光パネル及び照明器具 |
CN104091894A (zh) * | 2014-06-30 | 2014-10-08 | 京东方科技集团股份有限公司 | 一种有机发光二极管、阵列基板及其制备方法、显示装置 |
CN107195797B (zh) | 2017-06-28 | 2019-11-01 | 京东方科技集团股份有限公司 | 一种显示基板及显示装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999039393A1 (en) * | 1998-02-02 | 1999-08-05 | International Business Machines Corporation | Anode modification for organic light emitting diodes |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61220293A (ja) | 1985-03-26 | 1986-09-30 | 日産自動車株式会社 | 薄膜el素子 |
JP2846571B2 (ja) * | 1994-02-25 | 1999-01-13 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子 |
JPH10162960A (ja) * | 1996-11-27 | 1998-06-19 | Tdk Corp | 有機el発光素子 |
US6501217B2 (en) * | 1998-02-02 | 2002-12-31 | International Business Machines Corporation | Anode modification for organic light emitting diodes |
JP2001052874A (ja) | 1999-08-12 | 2001-02-23 | Sumitomo Electric Ind Ltd | 透明導電基板とそれを用いた有機エレクトロルミネッセンス素子 |
FI108204B (fi) | 1999-11-25 | 2001-11-30 | Kari Johannes Kirjavainen | Kalvo energioiden muuntamiseksi |
JP2002243573A (ja) | 2001-02-09 | 2002-08-28 | Km Techno:Kk | 遮水シート破損検知方法及び遮水シート破損検知装置 |
JP2002289358A (ja) | 2001-03-23 | 2002-10-04 | Ricoh Co Ltd | 有機エレクトロルミネッセンス素子 |
-
2003
- 2003-06-13 AU AU2003241652A patent/AU2003241652A1/en not_active Abandoned
- 2003-06-13 DE DE10393385T patent/DE10393385T5/de not_active Ceased
- 2003-06-13 CN CN03823511.0A patent/CN1685772B/zh not_active Expired - Fee Related
- 2003-06-13 US US10/520,005 patent/US7615921B2/en active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999039393A1 (en) * | 1998-02-02 | 1999-08-05 | International Business Machines Corporation | Anode modification for organic light emitting diodes |
Also Published As
Publication number | Publication date |
---|---|
DE10393385T5 (de) | 2005-08-25 |
AU2003241652A1 (en) | 2005-01-04 |
US20060124920A1 (en) | 2006-06-15 |
US7615921B2 (en) | 2009-11-10 |
CN1685772A (zh) | 2005-10-19 |
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PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP03 | Change of name, title or address |
Address after: Japan's Kawasaki City Patentee after: FUJI ELECTRIC Co.,Ltd. Address before: Kanagawa Patentee before: Fuji Electric Holdings Co.,Ltd. |
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ASS | Succession or assignment of patent right |
Owner name: SHARP KABUSHIKI KAISHA Free format text: FORMER OWNER: FUJI ELECTRIC CO., LTD. Effective date: 20120815 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120815 Address after: Osaka Patentee after: Sharp Corp. Address before: Japan's Kawasaki City Patentee before: FUJI ELECTRIC Co.,Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110511 |
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CF01 | Termination of patent right due to non-payment of annual fee |