CN1677634A - 半导体装置及其制造方法 - Google Patents
半导体装置及其制造方法 Download PDFInfo
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Abstract
一种半导体装置及其制造方法,敷金属夹层孔通过如下工序形成:照射激光在绝缘树脂膜上形成开口的第一工序;通过干式蚀刻在绝缘树脂膜上形成开口的第二工序;在等离子氛围气下进行反向溅射的第三工序。
Description
技术领域
本发明涉及形成有敷金属夹层的半导体装置及其制造方法。
背景技术
随着手机、PDA、DVC、DSC等便携电子设备的高功能化加速,为了使这样的制品被市场接受,而必须使其小型、轻量化。为实现该小型、轻量化,而要求高集成的系统LSI。另一方面,对这些电子设备要求更容易使用且便利性好,对用于设备的LSI要求高功能化、高性能化。因此,随着LSI芯片的高集成化,其I/O数增大,而封装本身的小型化要求也很强,为同时实现这两者,而强烈要求开发适用于半导体部件的高蜜度衬底安装的半导体封装。对应这样的要求,开发了各种被称为CSP(芯片尺寸封装Chip SizePackage)的封装技术。例如,专利文献1中记载有这样的CSP。
在这样的半导体封装中,为将来自半导体芯片的信号介由电极焊盘取出到外部,要在电极焊盘上形成敷金属夹层。由于在这样的电极焊盘下方配置有半导体芯片,故必须不施加高热量地形成敷金属夹层。
另外,伴随电子设备的高速化,开始使用铜作为配线材料。这样,在利用铜形成的焊盘电极中,当施加热量时,产生焊盘电极表面氧化这样的问题。专利文献1中有如下记载,为解决这样的问题,在焊盘电极上部覆盖防氧化用的Al焊盘电极。
关联文献
1:特开2003-249498号公报
2:特开2002-110717号公报
发明内容
本发明是鉴于所述问题而开发的,本发明的目的在于,提供一种使具有和电路元件的电极焊盘连接的敷金属夹层的半导体装置的稳定性良好的技术。
本发明的半导体装置的制造方法包括:在形成于具有电极焊盘的电路元件上的绝缘树脂膜上形成敷金属夹层孔,使电极焊盘露出的工序;向敷金属夹层孔内导入导电材料,形成与电极焊盘连接的敷金属夹层的工序,其中,形成敷金属夹层孔的工序包括通过照射激光在绝缘树脂膜上形成开口的第一工序和通过干式蚀刻在绝缘树脂膜上形成开口的第二工序。在此,电路元件是半导体元件或无源元件等。
根据该方法,可在通过激光照射迅速形成开口后,通过干式蚀刻形成微细的开口。由此,可缩短敷金属夹层孔的形成时间,同时,可进行微细的加工。另外,在形成使电路元件露出的敷金属夹层孔时,仅通过激光照射进行开口,激光的热可能使电路元件受到损伤。具体地说,可能使电路元件中含有的Cu或Al熔融、或向晶体管部施加热而使设备特性劣化。但是,根据该方法,由于阶段性地进行开口,故可利用激光开口至使电路元件不受损伤的程度的深度,然后,通过干式蚀刻进行开口。
半导体装置可进一步包括形成于绝缘树脂膜上的导电膜,形成敷金属夹层孔的工序还包括部分除去导电膜的工序,可以以导电膜为掩膜,进行第一工序及第二工序。由此,可简单地形成敷金属夹层孔。
第一工序可包括利用第一激光在绝缘树脂膜上形成开口的工序、和利用相对于绝缘树脂膜的加工速度比第一激光慢的第二激光在绝缘树脂膜上形成开口的工序。由此,可首先利用加工速度快的激光迅速地形成开口,同时,利用加工速度慢的激光进行微细加工。
第一工序可包括利用二氧化碳激光在绝缘树脂膜上形成开口的工序、和利用YAG激光在绝缘树脂膜上形成开口的工序。由此,即使在利用激光照射形成开口的阶段,也可以在首先利用二氧化碳激光迅速地形成开口后,利用YGA激光形成微细的开口。
形成敷金属夹层孔的工序还可包括在等离子氛围气下进行反向溅射的第三工序。由此,即使在由激光照射或干式蚀刻将电极焊盘表面氧化时,也可以除去氧化膜,使敷金属夹层孔和电极焊盘低电阻化。另外,也可以使敷金属夹层孔和电极焊盘间的附着性良好。
本发明的半导体装置包括:电路元件,其具有电极焊盘;绝缘树脂膜,其形成于电路元件上;敷金属夹层,其设于绝缘树脂膜内,和电极焊盘连接,其中,敷金属夹层侧壁的一部分被电极焊盘包围形成。通过该结构,可增大敷金属夹层和电极焊盘的接触面积,使敷金属夹层和电极焊盘低电阻化。
以上说明了本发明的结构,但将以上这些结构任意组合使用作为本发明的方式也是有效的。另外,将本发明的表达方式改变为其它类型也属于本发明的范畴。
附图说明
图1A~图1F是表示本发明实施例的半导体装置制造顺序的工序剖面图;
图2A~图2E是详细表示形成图1D所示的敷金属夹层孔的工序的图示;
图3是显示在以图2A~图2E所示的顺序形成的敷金属夹层孔内埋入导电材料的状态的图示。
具体实施方式
图1是表示本发明实施例的半导体装置制造顺序的工序剖面图。
首先,如图1A所示,在基体部件140上配置多个半导体元件142及无源元件144。半导体元件142例如是晶体管、二极管、IC芯片等。无源元件144例如是片状电容器、片状电阻等。在此,在半导体元件142的表面设有电极焊盘146。这里,图1表示在半导体元件142上突出设置电极焊盘146的状态。但半导体元件142的结构不限于此。例如也可以是将电极焊盘146埋入设于半导体元件142的凹部内的结构。在此,半导体元件142也可以是层积了多个半导体元件142的形态。此时,多个半导体元件142的组合例如可以是SRAM和Flash存储器、SRAM和DRAM。
其次,在多个半导体元件142及无源元件144上配置利用导电膜120及绝缘树脂膜122构成的带导电膜的绝缘树脂膜123,将带导电膜的绝缘树脂膜123压接在基体部件140上,在绝缘树脂膜122内压入半导体元件142及无源元件144。然后,在真空或减压下将绝缘树脂膜122加热,压装在基体部件144上。由此,如图1B所示,在绝缘树脂膜122内埋入半导体元件142及无源元件144,将半导体元件142及无源元件144压装在绝缘树脂膜122内。
导电膜120例如是轧制铜箔等轧制金属。绝缘树脂膜122只要是通过加热即可软化的材料,则可以使用任意一种材料,例如可使用环氧树脂、BT树脂等蜜胺衍生物、液晶聚合物、PPE树脂、聚酰亚胺树脂、氟树脂、酚醛树脂、聚酰胺双马来酰亚胺等。通过使用这样的材料,可提高半导体模块的刚性,提高半导体模块的稳定性。通过使用环氧树脂、BT树脂、PPE树脂、聚酰亚胺树脂、氟树脂、酚醛树脂、聚酰胺双马来酰亚胺等热硬性树脂作为绝缘树脂膜122,可进一步提高半导体模块的刚性。
环氧树脂例如有:双酚A型树脂、双酚F型树脂、双酚S型树脂、热塑型酚醛树脂、甲酚热塑型环氧树脂、三酚甲烷型环氧树脂、脂环式环氧树脂等。
蜜胺衍生物例如有:蜜胺、蜜胺三聚氰酸酯、羟甲基化蜜胺、(异)三聚氰酸、蜜白胺、蜜勒胺、蜜弄、琥珀酰胺、硫酸蜜胺、硫酸乙酰鸟粪胺、硫酸蜜白胺、硫酸胍基蜜胺、蜜胺树脂、BT树脂、三聚氰酸、异氰酸、三聚氰酸衍生物、蜜胺异三聚氰酸酯、苯并鸟粪胺、乙酰鸟粪胺等蜜胺衍生物、胍系化合物等。
液晶聚合物可例示:芳香族系液晶聚酯、聚酰亚胺、聚酯酰胺、或含有这些的树脂组成物。其中,优选耐热性、加工性及吸湿性的平衡优良的液晶聚酯或含有液晶聚酯的组合物。
液晶聚酯列举有,(1)使芳香族二羧酸、芳香族二元醇和芳香族羟基羧酸反应得到的物质;(2)使不同种类的芳香族羧酸组合反应得到的物质;(3)使芳香族二羧酸和芳香族二元醇反应得到的物质;(4)在聚对苯二甲酸乙二醇酯等聚酯中使芳香族羟基羧酸反应得到的物质等。另外,也可以代替这些芳香族二羧酸、芳香族二元醇及芳香族羟基羧酸使用它们的酯衍生物。另外,这些芳香族二羧酸、芳香族二元醇及芳香族羟基羧酸也可以使用芳香族部分被卤原子、烷基、芳基等取代的物质。
液晶聚酯的重复结构单元可列举:来源于芳香族二羧酸的重复结构单元(下式(i)),来源于芳香族二元醇的重复结构单元(下式(ii)),来源于芳香族羟基二羧酸的重复结构单元(下式(iii))。
(i)-CO-A1-CO-
(其中,A1表示含有芳香环的2价键合基团)
(ii)-O-A2-O-
(其中,A2表示含有芳香环的2价键合基团)
(iii)-CO-A3-O-
(其中,A3表示含有芳香环的2价键合基团)
另外,绝缘树脂膜122中可含有填充物或纤维等填充材料。填充物例如可使用粒子状或纤维状的SiO2或SiN。由于在绝缘树脂膜122中含有填充物或纤维,从而在加热绝缘树脂膜122,热压装半导体元件142及无源元件144后,将绝缘树脂膜122冷却到例如室温时,可降低绝缘树脂膜122的挠曲。由此,可提高半导体元件142及无源元件144和绝缘树脂膜144的附着性能。另外,在绝缘树脂膜122中含有纤维的情况下,可提高绝缘树脂膜122的流动性,故可提高绝缘树脂膜122和半导体元件142及无源元件144的附着性。从这样的观点考虑,构成绝缘树脂膜122的材料优选使用芳族聚酰胺无纺布。由此,可使加工性良好。
芳族聚酰胺纤维可使用对芳族聚酰胺纤维或间芳族聚酰胺纤维。对芳族聚酰胺纤维例如可使用聚(对苯二甲酰对苯二胺)(PPD-T),间芳族聚酰胺例如可使用聚(亚苯基间苯二酰胺)(MPD-I)。
带导电膜的绝缘树脂膜123可使用在薄膜状绝缘树脂膜122上附着导电膜120形成的膜。另外,带导电膜的绝缘树脂膜123也可以通过在导电膜120上涂敷构成绝缘树脂膜122的树脂组成物并使其干燥而形成。在本实施例中,树脂组成物在不背离本发明的目的的范围内,可以包括硬化剂、硬化促进剂、其它成分。带导电膜的绝缘树脂膜123将绝缘树脂膜122在B级化的状态下配置在基体部件140上。由此,可提高绝缘树脂膜122和半导体元件142及无源元件144的附着性。然后,根据构成绝缘树脂膜122的树脂种类加热绝缘树脂122,在真空或减压下压装带导电膜的绝缘树脂膜123和半导体元件142及无源元件144。另外,在其它例中,将薄膜状的绝缘树脂膜122在B级化的状态下配置在基体部件140上,然后在其上配置导电膜120,将绝缘树脂膜122和半导体元件142及无源元件144热压装时,通过将导电膜120热压装在绝缘树脂膜122上,也可以形成带导电膜的绝缘树脂膜123。
然后,在绝缘树脂膜122上形成敷金属夹层121。敷金属夹层121如下形成。首先,利用激光直描法(套切对准トレパニングアライメント)或湿式铜蚀刻部分除去对应形成敷金属夹层121的部位的导电膜120(图1C)。然后,组合使用二氧化碳激光、YAG激光、干式蚀刻、及反向溅射法,在绝缘树脂膜122上形成敷金属夹层孔121a(图1D)。下面详细叙述该处理。
然后,利用湿式处理将敷金属夹层孔121a粗糙化及清洗。其次,利用对应高长宽比的无电解镀敷、再利用电解镀敷在敷金属夹层孔121a内填充导电材料,形成敷金属夹层121(图1E)。敷金属夹层121例如可如下形成。首先,通过无电解镀铜在整个面上形成0.5~1μm程度的薄膜,然后,利用电解镀敷形成约20μm程度的膜。无电解镀敷用催化剂通常多使用钯,为在可挠性绝缘基体部件上附着无电解用镀敷用催化剂,可使钯以配位化合物的状态包含在水溶液中,浸渍可挠性绝缘基体部件,在表面粘附钯的配位化合物,并直接使用还原剂还原为金属钯,在可挠性绝缘基体部件表面形成用于开始镀敷的核。
然后,进行构图,形成配线(图1F)。配线可通过以光致抗蚀剂为掩膜,例如在从抗蚀剂露出的部位喷雾化学蚀刻液,蚀刻除去不需要的导电膜形成。由此,形成半导体装置100。然后,通过层积带导电膜的绝缘树脂膜123,反复进行同样的处理,可得到多层配线结构。
图2是详细表示形成图1D所示的敷金属夹层孔121a的工序的图示。如图2A所示,在半导体元件142上设置插塞14,在其上设置电极焊盘146。在电极焊盘146上设置由SiN膜18及聚酰亚胺膜20构成的钝化层16。在钝化层16上设置绝缘树脂膜122及导电膜120。
在这样的状态下,在导电膜120上形成抗蚀剂(未图示),将抗蚀剂曝光、显影,在敷金属夹层孔的形成部位开口。然后,以这样形成的抗蚀剂为掩膜,通过使用氯化铁溶液的湿式蚀刻除去导电膜120(图2B)。然后,使用氢氧化钠等碱水溶液除去抗蚀剂。
然后,以导电膜120为掩膜,在绝缘树脂膜122及钝化层16上形成敷金属夹层孔121a(图2C及图2D)。敷金属夹层孔121a如下形成,首先,利用二氧化碳激光形成开口,然后,利用YAG激光及干式蚀刻进行细微加工。
二氧化碳激光以第一条件及改变脉宽得到的第二条件两阶段照射。以0.25ms的脉冲周期使用1.0W输出的激光,第一条件可采用例如脉宽为8~10μs,发射次数为1。第二条件可采用例如脉宽为3~5μs,脉冲间隔等于或大于25ms,发射次数为3。由此,形成具有随着从导电膜120向半导体元件142的方向前进直径缩小的锥状侧壁的敷金属夹层孔121a。YAG激光的条件可以是,功率为5W,脉宽为10~50μs,脉冲间隔为10~50μs,发射数量为5~15。由此,可进行微细加工。
然后,利用使用氯或氟等卤素系气体的干式蚀刻进一步进行微细加工,形成敷金属夹层孔121a(图2E)。由此,电极焊盘146的表面也被除去一部分,在电极焊盘146表面形成凹部。然后,在Ar等离子氛围气下进行反向溅射。反向溅射的条件例如为,Ar气体流量为5sccm,压力为3mTorr、第一RF功率为150W,第二RF功率为280W,在室温下进行。由此,可除去电极焊盘146表面的氧化物。
在利用二氧化碳激光或YAG激光形成敷金属夹层孔121a的情况下,在电极焊盘146上施加热量可能将电极焊盘146表面氧化。但是,在本实施例中,由于利用干式蚀刻进行形成敷金属夹层孔121a的最终阶段,故可除去氧化物。另外,由于在干式蚀刻后进行反向溅射,故可进一步良好地除去氧化物。
图3是在如上形成的敷金属夹层孔121a内埋入导电材料的状态的图示。在此,由于利用干式蚀刻在电极焊盘146表面形成凹部,故在敷金属夹层孔121a内埋入导电材料,形成敷金属夹层121时,增加了敷金属夹层121和电极焊盘146的接触面积,故可使这些导电材料低电阻化。另外,由于可利用干式蚀刻及反向溅射除去氧化物,故可使这些导电材料进一步低电阻化。
在此,电极焊盘146例如可由铜或Al构成。电极焊盘146由包含在半导体装置100的层积方向具有长轴的晶体粒子的金属构成。
如上所述,根据本实施例的半导体装置100的制造方法,由于阶段性地形成敷金属夹层孔121a,故可在进行迅速的处理的同时,进行微细加工。另外,由于除去电极焊盘146表面的氧化膜后,形成敷金属夹层121,故可使敷金属夹层121及电极焊盘146低电阻化。另外,可增加敷金属夹层121和电极焊盘146的接触面积,可进一步使它们低电阻化。由此,可使半导体装置100的稳定性良好。
以上说明的半导体装置100可适用于以下说明的ISB(Integrated Systemin Board:注册商标)。ISB是在以半导体裸片为中心的电子电路封装中具有铜的配线图案,同时不使用用于支承电路部件的芯件(基体部件)的单独的无芯系统封装。在特开2002-110717号公报中记载有这样的系统封装。
目前,ISB封装可通过在也作为支承衬底起作用的导电箔上形成多层导电图案,制造多层配线结构,然后安装电路元件,并利用绝缘树脂模制,除去导电箔而得到。此时,导电箔可构成背面露出的结构。
根据该封装可得到如下优点。
(i)由于可通无芯安装,故可实现晶体管、IC、LSI的小型化、薄型化。
(ii)由于可将晶体管、系统LSI、直至片状的电容器或电阻形成电路,并进行封装,故可实现高度的SIP(系统封装System in Package)。
(iii)由于可组合现有的半导体芯片,故可在短期间内开发系统LSI。
(iv)由于半导体裸片之下没有芯件,故可得到良好的散热性能。
(v)由于电路配线是铜件,没有芯件,故构成低介电常数的电路配线,在高速数据传输或高频电路中发挥优良的特性。
(vi)由于是电极埋入封装内部的结构,故可抑制电极材料粒子污染的产生。
(vii)由于封装尺寸是单体,每个的废弃材料与64针的SQFP封装比较,为约1/10的量,故可降低环境负荷。
(viii)从载置部件的印刷线路板到加入了功能的电路衬底可实现新概念的系统结构。
(ix)ISB的图案设计与印刷线路板的图案设计同等容易,设备厂家的工程师可自己设计。
以上基于实施方式及实施例说明了本发明。本领域人员清楚:该实施方式及实施例只是例示,可有各种变形例,这样的变形例也属于本发明的范围。
Claims (17)
1、一种半导体装置的制造方法,其包括:在形成于具有电极焊盘的电路元件上的绝缘树脂膜上形成敷金属夹层孔,使所述电极焊盘露出的工序;向所述敷金属夹层内导入导电材料,形成与所述焊盘电极连接的敷金属夹层的工序,其中,形成所述敷金属夹层孔的工序包括照射激光在所述绝缘树脂膜上形成开口的第一工序和通过干式蚀刻在所述绝缘树脂膜上形成开口的第二工序。
2、如权利要求1所述的半导体装置的制造方法,其中,所述半导体装置还包括形成于所述绝缘树脂膜上的导电膜,形成所述敷金属夹层孔的工序还包括部分除去所述导电膜的工序,以所述导电膜为掩膜,进行所述第一工序及所述第二工序。
3、如权利要求1所述的半导体装置的制造方法,其中,所述第一工序包括利用第一激光在所述绝缘树脂膜上形成开口的工序、和利用对所述绝缘树脂膜的加工速度比所述第一激光慢的第二激光在所述绝缘树脂膜上形成开口的工序。
4、如权利要求2所述的半导体装置的制造方法,其中,所述第一工序包括利用第一激光在所述绝缘树脂膜上形成开口的工序、和利用对所述绝缘树脂膜的加工速度比所述第一激光慢的第二激光在所述绝缘树脂膜上形成开口的工序。
5、如权利要求1所述的半导体装置的制造方法,其中,所述第一工序包括利用二氧化碳激光在所述绝缘树脂膜上形成开口的工序、和利用YAG激光在所述绝缘树脂膜上形成开口的工序。
6、如权利要求2所述的半导体装置的制造方法,其中,所述第一工序包括利用二氧化碳激光在所述绝缘树脂膜上形成开口的工序、和利用YAG激光在所述绝缘树脂膜上形成开口的工序。
7、如权利要求3所述的半导体装置的制造方法,其中,所述第一工序包括利用二氧化碳激光在所述绝缘树脂膜上形成开口的工序、和利用YAG激光在所述绝缘树脂膜上形成开口的工序。
8、如权利要求4所述的半导体装置的制造方法,其中,所述第一工序包括利用二氧化碳激光在所述绝缘树脂膜上形成开口的工序、和利用YAG激光在所述绝缘树脂膜上形成开口的工序。
9、如权利要求1所述的半导体装置的制造方法,其中,形成所述敷金属夹层孔的工序还包括在等离子氛围气下进行反向溅射的第三工序。
10、如权利要求2所述的半导体装置的制造方法,其中,形成所述敷金属夹层孔的工序还包括在等离子氛围气下进行反向溅射的第三工序。
11、如权利要求3所述的半导体装置的制造方法,其中,形成所述敷金属夹层孔的工序还包括在等离子氛围气下进行反向溅射的第三工序。
12、如权利要求4所述的半导体装置的制造方法,其中,形成所述敷金属夹层孔的工序还包括在等离子氛围气下进行反向溅射的第三工序。
13、如权利要求5所述的半导体装置的制造方法,其中,形成所述敷金属夹层孔的工序还包括在等离子氛围气下进行反向溅射的第三工序。
14、如权利要求6所述的半导体装置的制造方法,其中,形成所述敷金属夹层孔的工序还包括在等离子氛围气下进行反向溅射的第三工序。
15、如权利要求7所述的半导体装置的制造方法,其中,形成所述敷金属夹层孔的工序还包括在等离子氛围气下进行反向溅射的第三工序。
16、如权利要求8所述的半导体装置的制造方法,其中,形成所述敷金属夹层孔的工序还包括在等离子氛围气下进行反向溅射的第三工序。
17、一种半导体装置,其包括:电路元件,其具有电极焊盘;绝缘树脂膜,其形成于所述电路元件上;敷金属夹层,其设于所述绝缘树脂膜内,和所述电极焊盘连接,其中,所述敷金属夹层侧壁的一部分被所述电极焊盘包围而形成。
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CN102768950A (zh) * | 2012-07-12 | 2012-11-07 | 江苏扬景光电有限公司 | 一种混合式蚀刻产生氮化物器件衬底的孔洞的方法 |
CN103730379A (zh) * | 2014-01-16 | 2014-04-16 | 苏州晶方半导体科技股份有限公司 | 芯片封装方法及结构 |
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JP5025932B2 (ja) * | 2005-09-26 | 2012-09-12 | 昭和電工株式会社 | 窒化物半導体発光素子の製造方法 |
US7915737B2 (en) | 2006-12-15 | 2011-03-29 | Sanyo Electric Co., Ltd. | Packing board for electronic device, packing board manufacturing method, semiconductor module, semiconductor module manufacturing method, and mobile device |
JP5175476B2 (ja) | 2007-02-28 | 2013-04-03 | 三洋電機株式会社 | 回路装置の製造方法 |
US7969005B2 (en) | 2007-04-27 | 2011-06-28 | Sanyo Electric Co., Ltd. | Packaging board, rewiring, roughened conductor for semiconductor module of a portable device, and manufacturing method therefor |
JP5024348B2 (ja) * | 2009-03-23 | 2012-09-12 | 株式会社デンソー | 基板の表面に樹脂絶縁膜のパターンを形成する方法及び半導体装置 |
US20110156261A1 (en) * | 2009-03-24 | 2011-06-30 | Christopher James Kapusta | Integrated circuit package and method of making same |
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WO2014012324A1 (zh) * | 2012-07-12 | 2014-01-23 | 江苏扬景光电有限公司 | 一种混合式蚀刻产生氮化物器件衬底的孔洞的方法 |
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JP4434809B2 (ja) | 2010-03-17 |
US20050212091A1 (en) | 2005-09-29 |
TW200535954A (en) | 2005-11-01 |
CN100541749C (zh) | 2009-09-16 |
CN101286463B (zh) | 2012-07-04 |
CN101286463A (zh) | 2008-10-15 |
JP2005286041A (ja) | 2005-10-13 |
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US7507658B2 (en) | 2009-03-24 |
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