CN1675124A - 具有集成导电屏蔽的微型机电装置 - Google Patents

具有集成导电屏蔽的微型机电装置 Download PDF

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Publication number
CN1675124A
CN1675124A CN03819538.0A CN03819538A CN1675124A CN 1675124 A CN1675124 A CN 1675124A CN 03819538 A CN03819538 A CN 03819538A CN 1675124 A CN1675124 A CN 1675124A
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CN
China
Prior art keywords
substrate
conductive shield
layer
conductive
sensing element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN03819538.0A
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English (en)
Chinese (zh)
Inventor
T·G·斯特拉顿
C·H·拉恩
G·R·加纳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of CN1675124A publication Critical patent/CN1675124A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
    • G01L19/0627—Protection against aggressive medium in general

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Micromachines (AREA)
CN03819538.0A 2002-06-17 2003-06-16 具有集成导电屏蔽的微型机电装置 Pending CN1675124A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/172,865 2002-06-17
US10/172,865 US6952042B2 (en) 2002-06-17 2002-06-17 Microelectromechanical device with integrated conductive shield

Publications (1)

Publication Number Publication Date
CN1675124A true CN1675124A (zh) 2005-09-28

Family

ID=29733197

Family Applications (1)

Application Number Title Priority Date Filing Date
CN03819538.0A Pending CN1675124A (zh) 2002-06-17 2003-06-16 具有集成导电屏蔽的微型机电装置

Country Status (7)

Country Link
US (2) US6952042B2 (enExample)
EP (1) EP1532070A2 (enExample)
JP (1) JP2005529760A (enExample)
CN (1) CN1675124A (enExample)
AU (1) AU2003243713A1 (enExample)
CA (1) CA2490393C (enExample)
WO (1) WO2003106329A2 (enExample)

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CN102205940A (zh) * 2011-04-25 2011-10-05 北京理工大学 Mems电热双晶体致动器
CN103063339A (zh) * 2011-10-20 2013-04-24 刘胜 带有屏蔽层的硅压阻式压力传感器芯片
CN103438936A (zh) * 2013-09-02 2013-12-11 东南大学 基于soi片器件层硅阳极键合的电容式温度、湿度和气压传感器集成制造方法
CN114544045A (zh) * 2020-11-19 2022-05-27 纬湃科技美国有限责任公司 具有应力调整器以最小化由电场屏蔽件引起的热滞后的mems压力传感元件

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US7015060B1 (en) * 2004-12-08 2006-03-21 Hrl Laboratories, Llc Cloverleaf microgyroscope with through-wafer interconnects and method of manufacturing a cloverleaf microgyroscope with through-wafer interconnects
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US7615841B2 (en) * 2005-05-02 2009-11-10 Taiwan Semiconductor Manufacturing Company, Ltd. Design structure for coupling noise prevention
US7345343B2 (en) * 2005-08-02 2008-03-18 Texas Instruments Incorporated Integrated circuit having a top side wafer contact and a method of manufacture therefor
JP4865267B2 (ja) * 2005-07-14 2012-02-01 富士フイルム株式会社 固体撮像装置及び内視鏡
US7673679B2 (en) * 2005-09-19 2010-03-09 Schlumberger Technology Corporation Protective barriers for small devices
DE102006010484A1 (de) * 2006-03-07 2007-09-13 Robert Bosch Gmbh Bewegungssensor
US20080042223A1 (en) * 2006-08-17 2008-02-21 Lu-Lee Liao Microelectromechanical system package and method for making the same
US20080075308A1 (en) * 2006-08-30 2008-03-27 Wen-Chieh Wei Silicon condenser microphone
US20080083957A1 (en) * 2006-10-05 2008-04-10 Wen-Chieh Wei Micro-electromechanical system package
US7894622B2 (en) 2006-10-13 2011-02-22 Merry Electronics Co., Ltd. Microphone
DE102007014468A1 (de) * 2007-03-22 2008-09-25 Endress + Hauser Gmbh + Co. Kg Drucksensor-Chip
DE102007027274A1 (de) * 2007-06-11 2008-12-18 Endress + Hauser Gmbh + Co. Kg Differenzdrucksensor
US20090151795A1 (en) * 2007-12-18 2009-06-18 Hsu Shih-Hsien Ice tray with water level detecting device
US7948147B2 (en) * 2009-02-19 2011-05-24 The Boeing Company Sensor network incorporating stretchable silicon
US8196475B2 (en) * 2009-03-16 2012-06-12 Kavlico Corporation Cointegrated MEMS sensor and method
JP2013012574A (ja) * 2011-06-29 2013-01-17 Toshiba Corp 固体撮像装置および固体撮像装置の製造方法
CN104736983B (zh) * 2012-10-17 2017-05-31 株式会社鹭宫制作所 压力传感器以及具备该压力传感器的传感器单元
KR20160067940A (ko) 2013-10-07 2016-06-14 코닌클리케 필립스 엔.브이. 페라이트 막대들을 제조하기 위한 정밀 배치 생성 방법
US9557237B2 (en) 2013-11-18 2017-01-31 Sensata Technologies, Inc. MEMS pressure sensor field shield layout for surface charge immunity in oil filled packaging
US9261419B2 (en) 2014-01-23 2016-02-16 Honeywell International Inc. Modular load structure assembly having internal strain gaged sensing
US9915577B2 (en) 2014-12-02 2018-03-13 Sensata Technologies, Inc. Case isolated oil filled MEMS pressure sensor
EP3112830B1 (en) 2015-07-01 2018-08-22 Sensata Technologies, Inc. Temperature sensor and method for the production of a temperature sensor
US9638559B1 (en) 2016-02-10 2017-05-02 Sensata Technologies Inc. System, devices and methods for measuring differential and absolute pressure utilizing two MEMS sense elements
CN107290099B (zh) 2016-04-11 2021-06-08 森萨塔科技公司 压力传感器、用于压力传感器的插塞件和制造插塞件的方法
EP3236226B1 (en) 2016-04-20 2019-07-24 Sensata Technologies, Inc. Method of manufacturing a pressure sensor
US10428716B2 (en) 2016-12-20 2019-10-01 Sensata Technologies, Inc. High-temperature exhaust sensor
US10545064B2 (en) 2017-05-04 2020-01-28 Sensata Technologies, Inc. Integrated pressure and temperature sensor
US10502641B2 (en) 2017-05-18 2019-12-10 Sensata Technologies, Inc. Floating conductor housing
US10323998B2 (en) 2017-06-30 2019-06-18 Sensata Technologies, Inc. Fluid pressure sensor
US10724907B2 (en) 2017-07-12 2020-07-28 Sensata Technologies, Inc. Pressure sensor element with glass barrier material configured for increased capacitive response
US10557770B2 (en) 2017-09-14 2020-02-11 Sensata Technologies, Inc. Pressure sensor with improved strain gauge
DE102019207963B4 (de) 2018-06-04 2023-11-09 Vitesco Technologies USA, LLC (n.d.Ges.d.Staates Delaware) Csoi - mems-druckerfassungselement mit spannungsausgleichern
EP3581903B1 (en) 2018-06-14 2021-04-07 Melexis Technologies NV N-implant electrical shield for piezo-resistor sensor
US11933683B2 (en) * 2020-09-03 2024-03-19 Te Connectivity Solutions Gmbh Strain gauge and strain measurement assembly
US11573143B2 (en) 2021-04-21 2023-02-07 Vitesco Technologies USA, LLC Mems pressure sensing element with stress adjustors to minimize thermal hysteresis induced by electrical field

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US7307775B2 (en) * 2000-12-07 2007-12-11 Texas Instruments Incorporated Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates
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US6755982B2 (en) * 2002-01-07 2004-06-29 Xerox Corporation Self-aligned micro hinges

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102205940A (zh) * 2011-04-25 2011-10-05 北京理工大学 Mems电热双晶体致动器
CN103063339A (zh) * 2011-10-20 2013-04-24 刘胜 带有屏蔽层的硅压阻式压力传感器芯片
CN103438936A (zh) * 2013-09-02 2013-12-11 东南大学 基于soi片器件层硅阳极键合的电容式温度、湿度和气压传感器集成制造方法
CN103438936B (zh) * 2013-09-02 2016-06-15 东南大学 基于soi片器件层硅阳极键合的电容式温度、湿度和气压传感器集成制造方法
CN114544045A (zh) * 2020-11-19 2022-05-27 纬湃科技美国有限责任公司 具有应力调整器以最小化由电场屏蔽件引起的热滞后的mems压力传感元件

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Publication number Publication date
US6952042B2 (en) 2005-10-04
EP1532070A2 (en) 2005-05-25
AU2003243713A1 (en) 2003-12-31
JP2005529760A (ja) 2005-10-06
CA2490393C (en) 2014-04-29
US20070243654A1 (en) 2007-10-18
CA2490393A1 (en) 2003-12-24
WO2003106329A2 (en) 2003-12-24
WO2003106329A3 (en) 2004-06-10
US20030230147A1 (en) 2003-12-18
US7687298B2 (en) 2010-03-30

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