CA2490393C - Microelectromechanical device with integrated conductive shield - Google Patents
Microelectromechanical device with integrated conductive shield Download PDFInfo
- Publication number
- CA2490393C CA2490393C CA2490393A CA2490393A CA2490393C CA 2490393 C CA2490393 C CA 2490393C CA 2490393 A CA2490393 A CA 2490393A CA 2490393 A CA2490393 A CA 2490393A CA 2490393 C CA2490393 C CA 2490393C
- Authority
- CA
- Canada
- Prior art keywords
- substrate
- conductive
- microelectromechanical device
- layer
- sensing element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims abstract description 202
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 35
- 229920005591 polysilicon Polymers 0.000 claims abstract description 35
- 230000008878 coupling Effects 0.000 claims abstract description 34
- 238000010168 coupling process Methods 0.000 claims abstract description 34
- 238000005859 coupling reaction Methods 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims description 70
- 239000004065 semiconductor Substances 0.000 claims description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 43
- 229910052710 silicon Inorganic materials 0.000 claims description 43
- 239000010703 silicon Substances 0.000 claims description 43
- 238000000151 deposition Methods 0.000 claims description 36
- 239000002019 doping agent Substances 0.000 claims description 25
- 238000002161 passivation Methods 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 11
- 238000005538 encapsulation Methods 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 239000000835 fiber Substances 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 abstract description 30
- 239000002184 metal Substances 0.000 abstract description 25
- 150000002500 ions Chemical group 0.000 abstract description 22
- 238000004519 manufacturing process Methods 0.000 abstract description 17
- 230000002452 interceptive effect Effects 0.000 abstract 1
- 230000008569 process Effects 0.000 description 37
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 125000004429 atom Chemical group 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 239000007769 metal material Substances 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 8
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 6
- 239000007943 implant Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 230000007613 environmental effect Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- -1 oxygen ions Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 230000000284 resting effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 2
- LEELWLKZRKDMAS-UHFFFAOYSA-N 2-(2,4-dimethoxy-3-methylsulfanylphenyl)ethanamine Chemical compound COC1=CC=C(CCN)C(OC)=C1SC LEELWLKZRKDMAS-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003287 bathing Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000502 dialysis Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 230000029058 respiratory gaseous exchange Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0627—Protection against aggressive medium in general
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
- Micromachines (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/172,865 | 2002-06-17 | ||
| US10/172,865 US6952042B2 (en) | 2002-06-17 | 2002-06-17 | Microelectromechanical device with integrated conductive shield |
| PCT/US2003/019624 WO2003106329A2 (en) | 2002-06-17 | 2003-06-16 | Microelectromechanical device with integrated conductive shield |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2490393A1 CA2490393A1 (en) | 2003-12-24 |
| CA2490393C true CA2490393C (en) | 2014-04-29 |
Family
ID=29733197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2490393A Expired - Fee Related CA2490393C (en) | 2002-06-17 | 2003-06-16 | Microelectromechanical device with integrated conductive shield |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6952042B2 (enExample) |
| EP (1) | EP1532070A2 (enExample) |
| JP (1) | JP2005529760A (enExample) |
| CN (1) | CN1675124A (enExample) |
| AU (1) | AU2003243713A1 (enExample) |
| CA (1) | CA2490393C (enExample) |
| WO (1) | WO2003106329A2 (enExample) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2289983B (en) | 1994-06-01 | 1996-10-16 | Simage Oy | Imaging devices,systems and methods |
| US9029793B2 (en) | 1998-11-05 | 2015-05-12 | Siemens Aktiengesellschaft | Imaging device |
| US6965165B2 (en) | 1998-12-21 | 2005-11-15 | Mou-Shiung Lin | Top layers of metal for high performance IC's |
| WO2002037572A1 (en) * | 2000-11-01 | 2002-05-10 | Japan Science And Technology Corporation | Point contact array, not circuit, and electronic circuit comprising the same |
| GB0224689D0 (en) * | 2002-10-23 | 2002-12-04 | Simage Oy | Formation of contacts on semiconductor substrates |
| WO2004038810A2 (en) * | 2002-10-25 | 2004-05-06 | Goldpower Limited | Circuit substrate and method |
| US7015060B1 (en) * | 2004-12-08 | 2006-03-21 | Hrl Laboratories, Llc | Cloverleaf microgyroscope with through-wafer interconnects and method of manufacturing a cloverleaf microgyroscope with through-wafer interconnects |
| US7884432B2 (en) * | 2005-03-22 | 2011-02-08 | Ametek, Inc. | Apparatus and methods for shielding integrated circuitry |
| US7615841B2 (en) * | 2005-05-02 | 2009-11-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Design structure for coupling noise prevention |
| US7345343B2 (en) * | 2005-08-02 | 2008-03-18 | Texas Instruments Incorporated | Integrated circuit having a top side wafer contact and a method of manufacture therefor |
| JP4865267B2 (ja) * | 2005-07-14 | 2012-02-01 | 富士フイルム株式会社 | 固体撮像装置及び内視鏡 |
| US7673679B2 (en) * | 2005-09-19 | 2010-03-09 | Schlumberger Technology Corporation | Protective barriers for small devices |
| DE102006010484A1 (de) * | 2006-03-07 | 2007-09-13 | Robert Bosch Gmbh | Bewegungssensor |
| US20080042223A1 (en) * | 2006-08-17 | 2008-02-21 | Lu-Lee Liao | Microelectromechanical system package and method for making the same |
| US20080075308A1 (en) * | 2006-08-30 | 2008-03-27 | Wen-Chieh Wei | Silicon condenser microphone |
| US20080083957A1 (en) * | 2006-10-05 | 2008-04-10 | Wen-Chieh Wei | Micro-electromechanical system package |
| US7894622B2 (en) | 2006-10-13 | 2011-02-22 | Merry Electronics Co., Ltd. | Microphone |
| DE102007014468A1 (de) * | 2007-03-22 | 2008-09-25 | Endress + Hauser Gmbh + Co. Kg | Drucksensor-Chip |
| DE102007027274A1 (de) * | 2007-06-11 | 2008-12-18 | Endress + Hauser Gmbh + Co. Kg | Differenzdrucksensor |
| US20090151795A1 (en) * | 2007-12-18 | 2009-06-18 | Hsu Shih-Hsien | Ice tray with water level detecting device |
| US7948147B2 (en) * | 2009-02-19 | 2011-05-24 | The Boeing Company | Sensor network incorporating stretchable silicon |
| US8196475B2 (en) * | 2009-03-16 | 2012-06-12 | Kavlico Corporation | Cointegrated MEMS sensor and method |
| CN102205940A (zh) * | 2011-04-25 | 2011-10-05 | 北京理工大学 | Mems电热双晶体致动器 |
| JP2013012574A (ja) * | 2011-06-29 | 2013-01-17 | Toshiba Corp | 固体撮像装置および固体撮像装置の製造方法 |
| CN103063339A (zh) * | 2011-10-20 | 2013-04-24 | 刘胜 | 带有屏蔽层的硅压阻式压力传感器芯片 |
| JP5877248B2 (ja) * | 2012-10-17 | 2016-03-02 | 株式会社鷺宮製作所 | 圧力センサおよび、それを備えるセンサユニット |
| CN103438936B (zh) * | 2013-09-02 | 2016-06-15 | 东南大学 | 基于soi片器件层硅阳极键合的电容式温度、湿度和气压传感器集成制造方法 |
| KR20160067940A (ko) | 2013-10-07 | 2016-06-14 | 코닌클리케 필립스 엔.브이. | 페라이트 막대들을 제조하기 위한 정밀 배치 생성 방법 |
| US9557237B2 (en) | 2013-11-18 | 2017-01-31 | Sensata Technologies, Inc. | MEMS pressure sensor field shield layout for surface charge immunity in oil filled packaging |
| US9261419B2 (en) | 2014-01-23 | 2016-02-16 | Honeywell International Inc. | Modular load structure assembly having internal strain gaged sensing |
| US9915577B2 (en) | 2014-12-02 | 2018-03-13 | Sensata Technologies, Inc. | Case isolated oil filled MEMS pressure sensor |
| EP3112830B1 (en) | 2015-07-01 | 2018-08-22 | Sensata Technologies, Inc. | Temperature sensor and method for the production of a temperature sensor |
| US9638559B1 (en) | 2016-02-10 | 2017-05-02 | Sensata Technologies Inc. | System, devices and methods for measuring differential and absolute pressure utilizing two MEMS sense elements |
| CN107290099B (zh) | 2016-04-11 | 2021-06-08 | 森萨塔科技公司 | 压力传感器、用于压力传感器的插塞件和制造插塞件的方法 |
| EP3236226B1 (en) | 2016-04-20 | 2019-07-24 | Sensata Technologies, Inc. | Method of manufacturing a pressure sensor |
| US10428716B2 (en) | 2016-12-20 | 2019-10-01 | Sensata Technologies, Inc. | High-temperature exhaust sensor |
| US10545064B2 (en) | 2017-05-04 | 2020-01-28 | Sensata Technologies, Inc. | Integrated pressure and temperature sensor |
| US10502641B2 (en) | 2017-05-18 | 2019-12-10 | Sensata Technologies, Inc. | Floating conductor housing |
| US10323998B2 (en) | 2017-06-30 | 2019-06-18 | Sensata Technologies, Inc. | Fluid pressure sensor |
| US10724907B2 (en) | 2017-07-12 | 2020-07-28 | Sensata Technologies, Inc. | Pressure sensor element with glass barrier material configured for increased capacitive response |
| US10557770B2 (en) | 2017-09-14 | 2020-02-11 | Sensata Technologies, Inc. | Pressure sensor with improved strain gauge |
| DE102019207963B4 (de) | 2018-06-04 | 2023-11-09 | Vitesco Technologies USA, LLC (n.d.Ges.d.Staates Delaware) | Csoi - mems-druckerfassungselement mit spannungsausgleichern |
| EP3581903B1 (en) | 2018-06-14 | 2021-04-07 | Melexis Technologies NV | N-implant electrical shield for piezo-resistor sensor |
| US11933683B2 (en) | 2020-09-03 | 2024-03-19 | Te Connectivity Solutions Gmbh | Strain gauge and strain measurement assembly |
| US11573143B2 (en) | 2021-04-21 | 2023-02-07 | Vitesco Technologies USA, LLC | Mems pressure sensing element with stress adjustors to minimize thermal hysteresis induced by electrical field |
| DE102021211561A1 (de) * | 2020-11-19 | 2022-05-19 | Vitesco Technologies USA, LLC | Mems-druckerfassungselement mit spannungsjustierern |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4463336A (en) * | 1981-12-28 | 1984-07-31 | United Technologies Corporation | Ultra-thin microelectronic pressure sensors |
| US4771639A (en) * | 1987-09-02 | 1988-09-20 | Yokogawa Electric Corporation | Semiconductor pressure sensor |
| JPH0961456A (ja) * | 1995-08-29 | 1997-03-07 | Murata Mfg Co Ltd | 半導体装置 |
| GB9710301D0 (en) * | 1997-05-21 | 1997-07-16 | Philips Electronics Nv | Image sensor and its manufacture |
| JP2000022172A (ja) * | 1998-06-30 | 2000-01-21 | Matsushita Electric Ind Co Ltd | 変換装置及びその製造方法 |
| US6352895B1 (en) * | 2000-03-15 | 2002-03-05 | International Business Machines Corporation | Method of forming merged self-aligned source and ONO capacitor for split gate non-volatile memory |
| WO2002027805A2 (en) * | 2000-09-29 | 2002-04-04 | Board Of Regents, The University Of Texas System | A theory of the charge multiplication process in avalanche photodiodes |
| US7307775B2 (en) * | 2000-12-07 | 2007-12-11 | Texas Instruments Incorporated | Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates |
| US6465856B2 (en) * | 2001-03-19 | 2002-10-15 | Xerox Corporation | Micro-fabricated shielded conductors |
| US6755982B2 (en) * | 2002-01-07 | 2004-06-29 | Xerox Corporation | Self-aligned micro hinges |
-
2002
- 2002-06-17 US US10/172,865 patent/US6952042B2/en not_active Expired - Fee Related
-
2003
- 2003-06-16 JP JP2004513168A patent/JP2005529760A/ja active Pending
- 2003-06-16 CA CA2490393A patent/CA2490393C/en not_active Expired - Fee Related
- 2003-06-16 EP EP03760489A patent/EP1532070A2/en not_active Withdrawn
- 2003-06-16 CN CN03819538.0A patent/CN1675124A/zh active Pending
- 2003-06-16 AU AU2003243713A patent/AU2003243713A1/en not_active Abandoned
- 2003-06-16 WO PCT/US2003/019624 patent/WO2003106329A2/en not_active Ceased
-
2005
- 2005-09-28 US US11/237,104 patent/US7687298B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US7687298B2 (en) | 2010-03-30 |
| US6952042B2 (en) | 2005-10-04 |
| US20070243654A1 (en) | 2007-10-18 |
| US20030230147A1 (en) | 2003-12-18 |
| EP1532070A2 (en) | 2005-05-25 |
| CA2490393A1 (en) | 2003-12-24 |
| CN1675124A (zh) | 2005-09-28 |
| AU2003243713A1 (en) | 2003-12-31 |
| WO2003106329A2 (en) | 2003-12-24 |
| WO2003106329A3 (en) | 2004-06-10 |
| JP2005529760A (ja) | 2005-10-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| MKLA | Lapsed |
Effective date: 20160616 |