CN1652666A - 制造布线衬底的方法及制造电子装置的方法 - Google Patents
制造布线衬底的方法及制造电子装置的方法 Download PDFInfo
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Abstract
本发明提供制造布线衬底的方法,包括以下步骤:(a)在衬底(10)的第一区域(12)及第二区域(14)上设置表面活性剂(18);(b)通过向衬底(10)的第二区域(14)照射真空紫外线(22),使衬底(10)的第二区域(14)的原子键断裂;(c)通过清洗衬底(10),除去设在第二区域(14)上的表面活性剂(18)部分;(d)在残留在第一区域(12)上的表面活性剂(18)部分上设置催化剂(30);(e)通过在催化剂(30)上沉积金属层(34),沿着第一区域(12)形成由金属层(34)构成的布线。根据本发明,能只在需要的部分上沉积金属层,同时以精简的制造步骤形成布线。
Description
技术领域
本发明涉及制造布线衬底的方法及制造电子装置的方法。
背景技术
众所周知,作为在柔性衬底上形成布线的方法包括减去法和添加法。在减去法中,在柔性衬底的整个表面上形成金属层,在金属层上布图形成光敏抗蚀层,并隔离开光敏抗蚀层刻蚀金属层。在添加法中,在柔性衬底上布图形成光敏抗蚀层,在从光敏抗蚀层开口的部位上通过镀金工艺使金属层沉积。
根据这些方法,在最后去除光敏抗蚀层方面、以及在减去法中去除部分金属层方面,带来资源及材料的耗费的问题。另外,因为需要光敏抗蚀层的形成及去除步骤,所以,带来制造步骤较多的问题。再者,布线的尺寸精度依赖于光敏抗蚀层的清晰度,由此,对于形成更高精度的布线存在一定的界限限制。
(专利文献1)日本特开平10-65315号公报
发明内容
本发明目的在于只在需要的部分上沉积金属层,同时以精简的制造步骤形成布线。
本发明涉及的布线衬底的制造方法包括以下步骤:
(a)在衬底的第一区域和第二区域上设置表面活性剂;
(b)向所述衬底的所述第二区域照射真空紫外线,使所述衬底的所述第二区域的原子键断裂;
(c)清洗所述衬底,除去设置在所述第二区域上的所述表面活性剂;
(d)在残留在所述第一区域上的所述表面活性剂上设置催化剂;以及
(e)在所述催化剂上沉积金属层,沿着所述第一区域形成由所述金属层构成的布线。
根据本发明,通过照射真空紫外线来布图表面活性剂,并在表面活性剂上设置催化剂。由此,能以沿着规定的图案形状只在需要的部分上沉积金属层。因此,不需要用例如抗蚀层等形成掩模,从而能以精简且较短时间的制造步骤形成高精度的布线,减少了材料的浪费,实现了低成本。
本发明涉及的布线衬底的制造方法包括以下步骤:
(a)在衬底的第一区域和第二区域上设置表面活性剂;
(b)向所述衬底的所述第二区域照射真空紫外线,使所述衬底的所述第二区域的原子键断裂;
(c)清洗所述衬底,除去设置在所述第二区域上的所述表面活性剂;
(d)在所述衬底的所述第二区域上设置催化剂;以及
(e)在所述催化剂上沉积金属层,沿着所述第二区域形成由所述金属层构成的布线。
根据本发明,通过照射真空紫外线来布图表面活性剂,并在表面活性剂上设置催化剂。由此,能以沿着规定的图案形状只在需要的部分上沉积金属层。因此,不需要用例如抗蚀层等来形成掩模,从而能以精简且较短时间的制造步骤形成高精度的布线,减少了材料的浪费,实现了低成本。
在该布线衬底的制造方法中,所述衬底具有C-C、C=C、C-F、C-H、C-CI、C-N、C-O、N-H、O-H键中的至少一种。
在该布线衬底的制造方法中,所述衬底至少具有C=C键,所述真空紫外线具有至少能使C=C键断裂的性质。
在该布线衬底的制造方法中,所述真空紫外线的光源是充入Xe气的激发态紫外灯。
本发明涉及的布线衬底的制造方法包括以下步骤:
(a)在包括第一区域和第二区域的衬底的所述第一区域上,用喷液法设置表面活性剂;
(b)在所述表面活性剂上设置催化剂;以及
(c)在所述催化剂上沉积金属层,沿着所述第一区域形成由所述金属层构成的布线。
根据本实施例,使用喷液法来布图表面活性剂,并在表面活性剂上设置催化剂。由此,能以沿着规定的图案形状只在需要的部分上沉积金属层。因此,不需要用例如抗蚀层等来形成掩模,从而能以精简且较短时间的制造步骤形成高精度的布线,减少了材料的浪费,实现了低成本。
本发明涉及的布线衬底的制造方法包括以下步骤:
(a)在包括第一区域和第二区域的衬底的所述第一区域上,用喷液法设置表面活性剂;
(b)在所述衬底的所述第二区域上设置催化剂;以及
(c)在所述催化剂上沉积金属层,沿着所述第二区域形成由所述金属层构成的布线。
根据本实施例,使用液喷法来布图表面活性剂,并避开表面活性剂设置催化剂。由此,能以沿着规定的图案形状只在需要的部分上沉积金属层。因此,不需要用例如抗蚀层等来形成掩模,从而能以精简且较短时间的制造步骤形成高精度的布线,减少了材料的浪费,实现了低成本。
在该布线衬底的制造方法中,所述喷液法是喷墨法。由此,通过使用在喷墨打印机用途中实用化的技术,能高速度地完成设置,避免了油墨的浪费,实现了经济化。
在该布线衬底的制造方法中,所述衬底的所述第一区域和第二区域的表面电位是负电位。
在该布线衬底的制造方法中,在所述步骤(a)之前,还包括碱洗所述衬底的步骤。由此,通过碱洗所述衬底,能使衬底表面上的不均匀电位得以均匀,所以,能以精简的制造步骤使表面电位稳定化。
在该布线衬底的制造方法中,在所述步骤(a)中,所述表面活性剂是阳离子表面活性剂。
在该布线衬底的制造方法中,在设置所述催化剂的步骤中,将所述衬底浸渍在含氯化锡的溶液中,接着浸渍在含氯化钯的催化剂液中,沉积用作所述催化剂的钯。
在该布线衬底的制造方法中,在设置所述催化剂的步骤中,将所述衬底浸渍在含锡-钯的催化剂液中,再从所述衬底上除去锡,沉积用作所述催化剂的钯。
本发明涉及的电子装置的制造方法,其包括根据权利要求1至13中任一项所述的用于制造布线衬底的方法;将具有集成电路的半导体芯片安装到所述布线衬底上的步骤;以及将所述布线衬底与所述电路板电连接的步骤。
根据本发明,能以精简且较短时间的制造步骤形成高精度的布线,减少了材料的浪费,实现了低成本。
附图说明
图1(A)~图1(C)是本发明第一实施例的第一个例子的说明图。
图2(A)及图2(B)是本发明第一实施例的第一个例子的说明图。
图3(A)~图3(D)是本发明第一实施例的第一个例子的说明图。
图4(A)及图4(B)是本发明第一实施例的第一个例子的说明图。
图5(A)及图5(B)是本发明第一实施例的第二个例子的说明图。
图6(A)及图6(B)是本发明第二实施例的第一个例子的说明图。
图7(A)及图7(B)是本发明第二实施例的第一个例子的说明图。
图8(A)~图8(C)是本发明第二实施例的第一个例子的说明图。
图9(A)及图9(B)是本发明第二实施例的第一个例子的说明图。
图10(A)及图10(B)是本发明第二实施例的第二个例子的说明图。
图11是本发明的第三实施例的示意图。
具体实施方式
下面,参照附图对本发明的实施例进行说明。
第一实施例
图1(A)~图5(B)是本发明的第一实施例涉及的布线衬底的制造方法的说明图。在本实施例中,适用化学镀金工艺来制造布线衬底。
第一例
图1(A)~图4(B)是本实施例的第一例的说明图。图1(A)~图2(B)是化学镀金工艺的各个步骤的说明图,图3(A)~图4(B)是化学镀金工艺的各个步骤中的衬底的示意图。
衬底(薄板)10可以是柔性衬底。作为柔性衬底可以使用FPC(Flexible Printed Circuit)、及COF(Chip On Film)用衬底或者TAB(Tape Automated Bonding)用衬底。衬底10可以用有机材料(例如树脂)形成。作为衬底10,可以使用聚酰亚胺衬底或者聚酯衬底。衬底10包括有机的原子键。衬底10可以包括C-C、C=C、C-F、C-H、C-CI、C-N、C-O、N-H、O-H键中的至少一个。衬底10也可以至少包括C=C键。在本实施例中,是在衬底10的一个表面形成布线。或者也可以在衬底10的两个表面都形成布线。衬底10包括第一区域12及第二区域14(参照图1(C)及图3(D))。第一区域12及第二区域14是衬底10上的布线形成面的区域。
如图3(A)所示,作为衬底10,可以使用其表面电位(溶液中表面电位)是负电位的材料。在使用有机系材料时,衬底10的表面电位是负电位的情况较多。
如图1(A)及图3(B)所示,可以碱洗衬底10。这样一来,能使衬底10的第一区域12及第二区域14表面的不均匀电位统一为负电位。具体来说,可以在室温下将衬底10浸渍在碱液(例如,1wt%~10wt%浓度的氢氧化钠)16中10~60分钟左右,然后,进行水洗。通过碱洗,衬底10的表层部被水解,这时,表层部形成水解层,该表层部也是负电位,电位比清洗前更加均匀化。
另外,通过上述的碱洗,衬底10能同时进行清洗及表面糙化处理。由此,能提高金属层(布线)的粘附性。
如图1(B)及图3(C)所示,在衬底10的第一区域12及第二区域14上设置表面活性剂18。可以在衬底10的一个面的整个范围内设置表面活性剂18。在本例子中,表面活性剂18具有阳离子化的性质。作为表面活性剂18,可以使用阳离子系表面活性剂(阳离子表面活性剂及与其性质等同的物质)。在本例子中,因为衬底10的第一区域12及第二区域14的表面电位是负电位,所以,一旦使用阳离子系表面活性剂,就能使衬底10的负电位中和或者转变为正电位。另外,通过使用表面活性剂18,可以不依赖衬底10的性质,自由地调整表面电位,另外,还能形成表面电位均匀、稳定的电位面。
在图1(B)所示的例子中,将衬底10浸渍在表面活性剂溶液20中。具体地,在室温下将衬底10浸渍在氯化烷基铵系的阳离子表面活性剂溶液中1~10分钟左右后,再用纯水清洗。然后,在室温氛围下充分干燥衬底10。
如图1(C)及图3(D)所示,除去设置在第一区域12及第二区域14上的表面活性剂18中的、设置在第二区域14上的部分。也就是说,以沿着第一区域12留下表面活性剂18的方式形成图案。
在本例子中,对衬底10的第二区域14照射真空紫外线(VUV:vacuum ultraviolet radiation)22。具体而言,在光源24和衬底10之间配置掩模26,通过掩模26,向衬底10照射真空紫外线22。真空紫外线22被掩模26的图案28遮掩,在图案28以外的区域透过。一旦照射真空紫外线22,衬底10的第二区域14的原子键被(化学地)断裂。在本例子中,衬底10的第二区域14并不是被机械地挖掉。由此,真空紫外线22的主要作用是使衬底10的原子键断裂,与挖掉衬底10的情况相比,可大大地节约能量。由此,例如,能防止衬底10发生热应变。另外,能防止衬底10的部分飞散并附着到其他部分上。
在这里,在本例子中,第一区域12是形成金属层(布线)的区域,并形成规定的图案形状。第二区域14形成衬底10表面上的第一区域12的反转形状。
真空紫外线22的波长可以是100nm~200nm(例如,100nm~180nm)。真空紫外线22具有能使有机原子键断裂的性质(例如,波长)。真空紫外线22也可以具有能使衬底10的至少C=C键断裂的性质(例如,波长)。真空紫外线22也可以具有能使衬底10的原子键(C-C、C=C、C-F、C-H、C-CI、C-N、C-O、N-H、O-H键中的至少一个)全部断裂的性质(例如,波长)。作为光源24可以是充入Xe气的激发态紫外灯(波长为172nm)。如果使用紫外灯,不再需要用于生成激光的聚光透镜及由激光器进行扫描的时间,所以,能够实现制造步骤的简略化。
具体地,如图1(C)所示,在衬底10的布线形成面上配置掩模26。掩模26既可以是光学掩模,也可以是金属掩模。例如,作为掩模26,使用在真空紫外线用的高纯度石英玻璃(真空紫外线的透过率是80%以上)上由铬形成图案的掩模。在图1(C)中,掩模26隔开一定间隔配置在衬底10的上方,但是,实际上,掩模26与衬底10接触地配置。光源24、掩模26及衬底10在氮气氛围中配置。如果是氮气氛围,真空紫外线22就不会衰减,能照射到10mm左右的距离。利用衬底10自身具有的弹性力及挠性,在衬底10和掩模26没有均匀接触时,用支撑物按压掩模26的外周,并且,也可以用与掩模26尺寸相同的面积将衬底10的内面压到掩模26侧。使光源24尽量地靠近衬底10(例如,10mm以下)。作为光源24使用例如,激发VUV/03清洗装置(制造商:日本USHIO电机株式会社,型号:UER20-172A/B,灯规格:充入Xe气的铁电体阻挡放电激发态紫外灯)。衬底10的材料为聚酰亚胺时,以10mW左右的输出功率照射10分钟左右。在本例子中,对衬底10的一个表面照射真空紫外线22,但是,在衬底10的两个表面上形成布线时,只要依次或同时对衬底10的各个表面照射真空紫外线22即可。
照射真空紫外线22后,清洗衬底10(例如,湿法清洗)。由此除去衬底10的原子键断裂的部分。也就是说,通过清洗,除去第二区域14上的表面活性剂18。作为清洗方式,可以将衬底10浸渍在清洗液中,也可以对衬底10进行喷淋。作为清洗液,可以使用碱溶液(强碱溶液或者弱碱溶液)或者纯水。作为喷淋方式,可以使用纯水喷淋清洗或者高压喷气纯水清洗。在清洗时,可以施加超音波振动。通过进行清洗,在第一区域12上留下表面活性剂18,在第二区域14上,表面活性剂18被除去而露出衬底10的表面。
如图2(A)及图4(A)所示,在残留在第一区域12上的表面活性剂18上设置催化剂(镀金催化剂)30。催化剂30用于在化学镀金溶液中诱发金属层(镀层)的沉积,例如,可以是钯。催化剂30可以不包括粘结用的树脂。在本例子中,在第二区域14上没有设置催化剂30。
在图2(A)的示例中,将衬底10浸渍在含锡-钯的催化剂液32中。具体地,在室温下,将衬底10在PH值大约为1的锡-钯催化剂液32中浸泡30秒~3分钟,进行充分水洗。锡-钯胶体微粒带有负电荷,吸附在表面活性剂18(阳离子系表面活性剂)上。然后,为了使催化剂活化,在室温下,将衬底10在含硼氟酸的溶液中浸泡30秒~3分钟后,进行水洗。由此,能除去锡胶体微粒,只使钯在表面活性剂18(阳离子系表面活性剂)上沉积。
如图2(B)及图4(B)所示,在催化剂30上沉积金属层34。催化剂30设置在表面活性剂18上,因为表面活性剂18沿着第一区域12露出,所以,以沿着第一区域12的图案形状形成金属层34。金属层34可以是一层,也可以是多层。金属层34的材料不受限定,例如,可以是Ni、Au、Ni+Au、Cu、Ni+Cu、Ni+Au+Cu中的任一种。只要根据沉积的金属层34的材料选择催化剂即可。
在图2(B)所示的例子中,将衬底10在六水合硫酸镍为主体的镀液(温度为80℃)中浸泡1~3分钟左右,形成0.1~0.2μm左右厚度的镍层。或者,也可以将衬底10在六水合氯化镍为主体的镀液(温度为60℃)中浸泡3~10分钟左右,形成0.1~0.2μm左右厚度的镍层。根据本例子,因为沿着第一区域12设置催化剂30,所以,即使不使用抗蚀层等来形成掩模,也能沿着衬底10的第一区域12有选择地形成金属层34。
根据本例子,通过照射真空紫外线22使表面活性剂18形成图案,并在表面活性剂18上设置催化剂30。由此,能沿着规定的图案形状只在需要的部分上沉积金属层34。因此,不需要用例如抗蚀层等来形成掩模,从而能以精简且较短时间的制造步骤形成高精度的布线,减少了材料的浪费,实现了低成本。
第二例
图5(A)及图5(B)是本实施例的第二例说明图。在本例子中,在如图3(A)~图3(D)所示那样在第一区域12上设置表面活性剂18后,在衬底10的第二区域14上设置催化剂38。也就是说,在衬底10的表面中的、从表面活性剂18露出的第二区域14上设置催化剂38。在本例子中,第二区域14是形成金属层(布线)的区域,形成规定的图案形状。
例如,将衬底10浸渍在带正电荷的氯化锡溶液中,接着浸渍在含氯化钯的催化剂液中,由此,能在衬底10的第二区域14(负电位部分)上沉积钯。另外,可以将衬底10浸渍在该催化剂液中1~5分钟之后,再用纯水水洗。
然后,如图5(B)所示,在催化剂38上沉积金属层40。因为催化剂38设置在第二区域14上,所以,以沿着第二区域14的图案形状形成金属层40。
另外,本例子的其他详细说明可以适用上述例子中说明的内容。
第二实施例
图6(A)~图10(B)是本发明的第二实施例涉及的布线衬底的制造方法的说明图。在本实施例中,通过使用喷液法来布图表面活性剂。
第一例
图6(A)~图7(B)是化学镀金工艺的各步骤的说明图。图8(A)~图9(B)是化学镀金工艺的各步骤中的衬底的示意图。
如图8(A)所示,作为衬底10,预先使其表面电位形成负电位。如图6(A)所示,可以通过将衬底10浸渍在碱液(例如,无机碱液)62中进行碱洗。由此,如图8(B)所示,能使衬底10的第一区域12及第二区域14表面的不均匀电位变为均匀的负电位。碱洗的详细步骤按照第一实施例的第一例中说明的进行。
如图6(B)及图8(C)所示,通过使用喷液法,在衬底10的第一区域12上设置表面活性剂64。也就是说,将液滴(表面活性剂64)从液滴喷出部66直接喷到衬底10的表面上,并形成规定的图案形状。由此,能有选择地设置表面活性剂64,不需要用抗蚀层等形成掩模,所以,制造步骤得以简化。液滴至少部分包括表面活性剂64,例如,可以以表面活性剂64为核心,其表面用树脂(粘结材料)等涂覆。或者,液滴也可以只由表面活性剂64构成。喷液法既可以是喷墨方式,也可以是分配器涂布方式,液滴喷出的方式并不受限定。如果采用喷墨方式,通过使用在喷墨打印机中实用化的技术,能够实现高速并且控制了油墨(表面活性剂64)的浪费,实现了经济化。作为喷墨头,可以使用压电元件的压电喷射型,或者采用能量产生元件,其可以是使用电热转换体的真空喷射(注册商标)型等。
在本例子中,表面活性剂64具有阳离子化的性质。作为表面活性剂64可以使用阳离子系表面活性剂。在本例子中,因为衬底10的第一区域12及第二区域14的表面电位是负电位,所以,一旦使用阳离子系表面活性剂,在衬底10的表面电位中,第一区域12成为中和状态或者正电位,第二区域14成为负电位。
如图7(A)及图9(A)所示,在衬底10的第二区域14上设置催化剂68。也就是说,在衬底10中的、从表面活性剂64露出的第二区域14上设置催化剂68。在第一区域12上不设置催化剂68。在本例子中第二区域14是形成金属层(布线)的区域,形成规定的图案形状。为了得到催化剂,可以将衬底10浸渍在含氯化锡的溶液中,接着浸渍在含氯化钯的催化剂液70中。具体地,按照第一实施例的第二例中的说明进行。
然后,如图7(B)及图9(B)所示,在催化剂68上沉积金属层72。因为催化剂68设置在第二区域14上,所以,能以沿着第二区域14的图案形状形成金属层72。另外,如图7(B)所示,金属层的沉积可以通过将衬底10浸渍在规定的化学镀液74中进行,具体地,按照第一实施例的第一例中的说明进行。
根据本例子,使用喷液法来布图表面活性剂64,并且避开表面活性剂64设置催化剂68。由此,能沿着规定的图案形状只在规定的部分上沉积金属层72。因此,不需要用例如抗蚀层等形成掩模,从而能以精简且较短时间的制造步骤形成高精度的布线,减少了材料的浪费,实现了低成本。
另外,本例子的其他详细说明可以适用上述例子中说明的内容。
第二例
图10(A)及图10(B)是本实施例的第二例子的说明图。在本例子中,如图8(A)~图8(C)所示,通过喷液法喷出表面活性剂64后,在表面活性剂64上设置催化剂76。因为表面活性剂64设置在第一区域12上,所以,催化剂68也设置在第一区域12上。在第二区域14上不设置催化剂68。在本例子中,第一区域12是形成金属层(布线)的区域,形成规定的图案形状。在本例子中,在衬底10的表面电位中,第一区域12通过(阳离子系)表面活性剂64成为中和或者正电位,第二区域14由于从衬底10的表面露出而成为负电位。为了得到催化剂,将衬底10浸渍在含锡-钯的催化剂液中。具体地,按照第一实施例的第一例的说明进行。
然后,如图10(B)所示,在催化剂76上沉积金属层78。因为催化剂76设置在第一区域12上,所以,能以沿着第一区域12的图案形状形成金属层78。
另外,本例子的其他详细说明可以适用上述例子中的说明内容。
第三实施例
图11是用于说明本发明的第三实施例的电子装置的制造方法的示意图,具体地显示了具有布线衬底的电子装置的一个例子。
在布线衬底1上形成规定的图案形状的金属层(在图11中省略)。可以将具有集成电路的半导体芯片80(例如,倒装)安装到布线衬底1上。半导体芯片80(集成电路)电连接于金属层。这样,可以制造出包括半导体芯片80和布线衬底1的半导体装置3。然后,将布线衬底1(或者半导体装置3)与电路板82电连接。由此,能制造出电子装置。另外,布线衬底1也可以如图11的箭头所示那样进行弯曲。
电路板82是电光面板时,电子装置为电光装置,电光装置可以是液晶装置、等离子体显示装置、场致发光显示装置等。根据本实施例,能以精简和短时间的制造步骤形成高精度的布线,减少了材料的浪费,实现了低成本。
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,本发明可以有各种更改和变化。例如,本发明包括与实施例中说明的结构实质相同的结构(例如,功能、方法及效果相同的结构、或者目的及效果相同的结构)。另外,本发明还包括与实施例中说明的结构起到同样作用的效果的结构、或者可实现同样目的的结构。另外,本发明还包括在实施例中说明的结构中附加公开技术的结构。
符号说明
1:布线衬底 3:半导体装置
10:衬底 11:表层部
12:第一区域 14:第二区域
16:碱液 18:表面活性剂
20:表面活性剂溶液 22:真空紫外线
24:光源 26:掩模
28:图案 30:催化剂
32:催化剂溶液 34:金属层
38:催化剂 40:金属层
64:表面活性剂 66:喷液部
68:催化剂 70:催化剂溶液
72:金属层 76:催化剂
78:金属层 80:半导体芯片
82:电路板
Claims (14)
1.一种用于制造布线衬底的方法,其特征在于,包括如下步骤:
(a)在衬底的第一区域和第二区域上设置表面活性剂;
(b)向所述衬底的所述第二区域照射真空紫外线,使所述衬底的所述第二区域的原子键断裂;
(c)清洗所述衬底,除去设置在所述第二区域上的所述表面活性剂;
(d)在残留在所述第一区域上的所述表面活性剂上设置催化剂;以及
(e)在所述催化剂上沉积金属层,沿着所述第一区域形成由所述金属层构成的布线。
2.一种用于制造布线衬底的方法,其特征在于,包括如下步骤:
(a)在衬底的第一区域和第二区域上设置表面活性剂;
(b)向所述衬底的所述第二区域照射真空紫外线,使所述衬底的所述第二区域的原子键断裂;
(c)清洗所述衬底,除去设置在所述第二区域上的所述表面活性剂;
(d)在所述衬底的所述第二区域上设置催化剂;以及
(e)在所述催化剂上沉积金属层,沿着所述第二区域形成由所述金属层构成的布线。
3.根据权利要求1或2所述的用于制造布线衬底的方法,其特征在于,所述衬底具有C-C、C=C、C-F、C-H、C-CI、C-N、C-O、N-H、O-H键中的至少一种。
4.根据权利要求1至3中任一项所述的用于制造布线衬底的方法,其特征在于,所述衬底至少具有C=C键,所述真空紫外线具有至少能使C=C键断裂的性质。
5.根据权利要求1至4中任一项所述的用于制造布线衬底的方法,其特征在于,所述真空紫外线的光源是充入Xe气的激发态紫外灯。
6.一种用于制造布线衬底的方法,其特征在于,包括如下步骤:
(a)在包括第一区域和第二区域的衬底的所述第一区域上,用喷液法设置表面活性剂;
(b)在所述表面活性剂上设置催化剂;以及
(c)在所述催化剂上沉积金属层,沿着所述第一区域形成由所述金属层构成的布线。
7.一种用于制造布线衬底的方法,其特征在于,包括如下步骤:
(a)在包括第一区域和第二区域的衬底的所述第一区域上,用喷液法设置表面活性剂;
(b)在所述衬底的所述第二区域上设置催化剂;以及
(c)在所述催化剂上沉积金属层,沿着所述第二区域形成由所述金属层构成的布线。
8.根据权利要求6或7所述的用于制造布线衬底的方法,其特征在于,所述喷液法是喷墨法。
9.根据权利要求1至8中任一项所述的用于制造布线衬底的方法,其特征在于,所述衬底的所述第一区域和第二区域的表面电位是负电位。
10.根据权利要求1至9中任一项所述的用于制造布线衬底的方法,其特征在于,在所述步骤(a)之前,还包括碱洗所述衬底的步骤。
11.根据权利要求1至10中任一项所述的用于制造布线衬底的方法,其特征在于,在所述步骤(a)中,所述表面活性剂是阳离子系表面活性剂。
12.根据权利要求1至11中任一项所述的用于制造布线衬底的方法,其特征在于,在设置所述催化剂的步骤中,将所述衬底浸渍在含氯化锡的溶液中,接着浸渍在含氯化钯的催化剂液中,沉积用作所述催化剂的钯。
13.根据权利要求1至11中任一项所述的用于制造布线衬底的方法,其特征在于,在设置所述催化剂的步骤中,将所述衬底浸渍在含锡-钯的催化剂液中,再从所述衬底上除去锡,沉积用作所述催化剂的钯。
14.一种用于制造电子装置的方法,包括:
根据权利要求1至13中任一项所述的用于制造布线衬底的方法;
将具有集成电路的半导体芯片安装到所述布线衬底上的步骤;以及
将所述布线衬底与所述电路板电连接的步骤。
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TWI269450B (en) * | 2005-12-20 | 2006-12-21 | Taiwan Tft Lcd Ass | A direct patterned method for manufacturing a metal layer of a semiconductor device |
JP2007243031A (ja) | 2006-03-10 | 2007-09-20 | Seiko Epson Corp | 配線基板の製造方法 |
JP2007243034A (ja) | 2006-03-10 | 2007-09-20 | Seiko Epson Corp | 配線基板の製造方法 |
JP2007243037A (ja) * | 2006-03-10 | 2007-09-20 | Seiko Epson Corp | 配線基板の製造方法 |
JP6130332B2 (ja) * | 2014-06-30 | 2017-05-17 | キヤノン・コンポーネンツ株式会社 | 金属皮膜付樹脂製品の製造方法 |
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BE1007610A3 (nl) * | 1993-10-11 | 1995-08-22 | Philips Electronics Nv | Werkwijze voor het stroomloos aanbrengen van een metaalpatroon op een elektrisch isolerend substraat. |
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