CN1638147A - 薄膜晶体管 - Google Patents
薄膜晶体管 Download PDFInfo
- Publication number
- CN1638147A CN1638147A CNA2004101038820A CN200410103882A CN1638147A CN 1638147 A CN1638147 A CN 1638147A CN A2004101038820 A CNA2004101038820 A CN A2004101038820A CN 200410103882 A CN200410103882 A CN 200410103882A CN 1638147 A CN1638147 A CN 1638147A
- Authority
- CN
- China
- Prior art keywords
- source
- gate electrode
- film transistor
- thin
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 230000004888 barrier function Effects 0.000 claims description 52
- 230000015572 biosynthetic process Effects 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 23
- 239000012535 impurity Substances 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 13
- 238000000059 patterning Methods 0.000 claims description 13
- 239000010410 layer Substances 0.000 description 78
- 239000012528 membrane Substances 0.000 description 21
- 239000012212 insulator Substances 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 238000000034 method Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- 239000011229 interlayer Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
- H01L29/78615—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect with a body contact
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (23)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2003-0072337A KR100501706B1 (ko) | 2003-10-16 | 2003-10-16 | 게이트-바디콘택 박막 트랜지스터 |
KR72337/2003 | 2003-10-16 | ||
KR72337/03 | 2003-10-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1638147A true CN1638147A (zh) | 2005-07-13 |
CN100405614C CN100405614C (zh) | 2008-07-23 |
Family
ID=34374288
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004101038820A Expired - Lifetime CN100405614C (zh) | 2003-10-16 | 2004-10-18 | 薄膜晶体管 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8704305B2 (zh) |
EP (1) | EP1524702A3 (zh) |
JP (1) | JP2005123565A (zh) |
KR (1) | KR100501706B1 (zh) |
CN (1) | CN100405614C (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101546782B (zh) * | 2008-03-27 | 2011-01-12 | 三星移动显示器株式会社 | 薄膜晶体管、其制造方法及有机发光二极管显示装置 |
US8253141B2 (en) | 2008-07-14 | 2012-08-28 | Samsung Mobile Display Co., Ltd. | Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the thin film transistor |
US8283668B2 (en) | 2007-08-23 | 2012-10-09 | Samsung Display Co., Ltd. | Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same |
US8318523B2 (en) | 2008-04-11 | 2012-11-27 | Samsung Display Co., Ltd. | Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same |
US8513669B2 (en) | 2007-08-22 | 2013-08-20 | Samsung Display Co., Ltd. | Thin film transistor including metal or metal silicide structure in contact with semiconductor layer and organic light emitting diode display device having the thin film transistor |
US8790967B2 (en) | 2007-05-31 | 2014-07-29 | Samsung Display Co., Ltd. | Method of fabricating polycrystalline silicon layer, TFT fabricated using the same, method of fabricating TFT, and organic light emitting diode display device having the same |
CN108400148A (zh) * | 2017-02-07 | 2018-08-14 | 三星显示有限公司 | 显示装置及其制造方法 |
WO2019064130A1 (en) * | 2017-09-26 | 2019-04-04 | International Business Machines Corporation | VERTICAL THIN FILM TRANSISTOR |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100796592B1 (ko) | 2005-08-26 | 2008-01-21 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그 제조 방법 |
KR101614398B1 (ko) | 2012-08-13 | 2016-05-02 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판과 그 제조방법 및 그를 이용한 유기 발광장치 |
CN104022076B (zh) * | 2014-05-27 | 2017-01-25 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示装置 |
CN104112711B (zh) * | 2014-07-22 | 2017-05-03 | 深圳市华星光电技术有限公司 | 共平面型氧化物半导体tft基板的制作方法 |
KR20180045968A (ko) | 2016-10-26 | 2018-05-08 | 삼성디스플레이 주식회사 | 표시 장치 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3577019A (en) | 1968-09-24 | 1971-05-04 | Gen Electric | Insulated gate field effect transistor used as a voltage-controlled linear resistor |
US4035198A (en) * | 1976-06-30 | 1977-07-12 | International Business Machines Corporation | Method of fabricating field effect transistors having self-registering electrical connections between gate electrodes and metallic interconnection lines, and fabrication of integrated circuits containing the transistors |
US4749588A (en) * | 1984-09-07 | 1988-06-07 | Nobuhiro Fukuda | Process for producing hydrogenated amorphous silicon thin film and a solar cell |
JPS62104173A (ja) * | 1985-10-31 | 1987-05-14 | Fujitsu Ltd | 半導体装置 |
JP3024620B2 (ja) | 1990-04-11 | 2000-03-21 | セイコーエプソン株式会社 | 液晶パネルの製造方法 |
JP2903892B2 (ja) * | 1992-09-07 | 1999-06-14 | 日本電気株式会社 | 電界効果トランジスタの製造方法 |
JPH06151859A (ja) * | 1992-09-15 | 1994-05-31 | Canon Inc | 半導体装置 |
TW324862B (en) | 1996-07-03 | 1998-01-11 | Hitachi Ltd | Liquid display apparatus |
JPH10173197A (ja) | 1996-12-06 | 1998-06-26 | Casio Comput Co Ltd | 薄膜トランジスタ及びその製造方法 |
JPH10229199A (ja) * | 1997-02-18 | 1998-08-25 | Hitachi Ltd | 半導体素子およびそれを用いた液晶表示装置 |
JP3441330B2 (ja) | 1997-02-28 | 2003-09-02 | 株式会社東芝 | 半導体装置及びその製造方法 |
US6734925B1 (en) | 1998-12-07 | 2004-05-11 | Samsung Electronics Co., Ltd. | Multiple testing bars for testing liquid crystal display and method thereof |
US6020222A (en) * | 1997-12-16 | 2000-02-01 | Advanced Micro Devices, Inc. | Silicon oxide insulator (SOI) semiconductor having selectively linked body |
JP2001007333A (ja) * | 1999-06-21 | 2001-01-12 | Seiko Epson Corp | Soi構造のmos電界効果トランジスタ及びその製造方法 |
US6628159B2 (en) * | 1999-09-17 | 2003-09-30 | International Business Machines Corporation | SOI voltage-tolerant body-coupled pass transistor |
KR100343288B1 (ko) | 1999-10-25 | 2002-07-15 | 윤종용 | 에스오아이 모스 트랜지스터의 플로팅 바디 효과를제거하기 위한 에스오아이 반도체 집적회로 및 그 제조방법 |
JP2002033484A (ja) | 2000-07-18 | 2002-01-31 | Mitsubishi Electric Corp | 半導体装置 |
JP2002246600A (ja) | 2001-02-13 | 2002-08-30 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2003174172A (ja) * | 2001-09-26 | 2003-06-20 | Seiko Epson Corp | 電界効果トランジスタおよびこれを用いた電気光学装置、半導体装置ならびに電子機器 |
KR100542986B1 (ko) | 2003-04-29 | 2006-01-20 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 상기 박막 트랜지스터 제조 방법 및 이를 이용한 표시장치 |
KR100515357B1 (ko) | 2003-08-14 | 2005-09-15 | 삼성에스디아이 주식회사 | 게이트와 바디가 전기적으로 연결된 박막 트랜지스터와 그제조방법 |
KR100543004B1 (ko) | 2003-09-18 | 2006-01-20 | 삼성에스디아이 주식회사 | 평판표시장치 |
-
2003
- 2003-10-16 KR KR10-2003-0072337A patent/KR100501706B1/ko active IP Right Grant
-
2004
- 2004-04-20 JP JP2004124151A patent/JP2005123565A/ja active Pending
- 2004-10-08 US US10/959,976 patent/US8704305B2/en active Active
- 2004-10-12 EP EP04090396A patent/EP1524702A3/en not_active Ceased
- 2004-10-18 CN CNB2004101038820A patent/CN100405614C/zh not_active Expired - Lifetime
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8790967B2 (en) | 2007-05-31 | 2014-07-29 | Samsung Display Co., Ltd. | Method of fabricating polycrystalline silicon layer, TFT fabricated using the same, method of fabricating TFT, and organic light emitting diode display device having the same |
US8513669B2 (en) | 2007-08-22 | 2013-08-20 | Samsung Display Co., Ltd. | Thin film transistor including metal or metal silicide structure in contact with semiconductor layer and organic light emitting diode display device having the thin film transistor |
US8283668B2 (en) | 2007-08-23 | 2012-10-09 | Samsung Display Co., Ltd. | Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same |
CN101546782B (zh) * | 2008-03-27 | 2011-01-12 | 三星移动显示器株式会社 | 薄膜晶体管、其制造方法及有机发光二极管显示装置 |
US8436360B2 (en) | 2008-03-27 | 2013-05-07 | Samsung Display Co., Ltd. | Thin film transistor, method of fabricating the same, and organic lighting emitting diode display device including the same |
US8101952B2 (en) | 2008-03-27 | 2012-01-24 | Samsung Mobile Display Co., Ltd. | Thin film transistor, method of fabricating the same, and organic lighting emitting diode display device including the same |
US8318523B2 (en) | 2008-04-11 | 2012-11-27 | Samsung Display Co., Ltd. | Thin film transistor, method of fabricating the same and organic light emitting diode display device having the same |
US8253141B2 (en) | 2008-07-14 | 2012-08-28 | Samsung Mobile Display Co., Ltd. | Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the thin film transistor |
CN108400148A (zh) * | 2017-02-07 | 2018-08-14 | 三星显示有限公司 | 显示装置及其制造方法 |
CN108400148B (zh) * | 2017-02-07 | 2023-08-25 | 三星显示有限公司 | 显示装置及其制造方法 |
WO2019064130A1 (en) * | 2017-09-26 | 2019-04-04 | International Business Machines Corporation | VERTICAL THIN FILM TRANSISTOR |
US10522686B2 (en) | 2017-09-26 | 2019-12-31 | International Business Machines Corporation | Vertical thin film transistor |
US11239369B2 (en) | 2017-09-26 | 2022-02-01 | International Business Machines Corporation | Vertical thin film transistor |
US11271116B2 (en) | 2017-09-26 | 2022-03-08 | International Business Machines Corporation | Vertical thin film transistor |
Also Published As
Publication number | Publication date |
---|---|
CN100405614C (zh) | 2008-07-23 |
US20050082530A1 (en) | 2005-04-21 |
EP1524702A2 (en) | 2005-04-20 |
US8704305B2 (en) | 2014-04-22 |
JP2005123565A (ja) | 2005-05-12 |
KR100501706B1 (ko) | 2005-07-18 |
EP1524702A3 (en) | 2006-03-01 |
KR20050036625A (ko) | 2005-04-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20090109 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Mobile Display Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung SDI Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG MOBILE DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG SDI CO., LTD. Effective date: 20090109 |
|
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG MOBILE DISPLAY CO., LTD. Effective date: 20121017 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20121017 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Display Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Mobile Display Co., Ltd. |