CN1633515B - 制造电路用孔眼掩模 - Google Patents

制造电路用孔眼掩模 Download PDF

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Publication number
CN1633515B
CN1633515B CN038040069A CN03804006A CN1633515B CN 1633515 B CN1633515 B CN 1633515B CN 038040069 A CN038040069 A CN 038040069A CN 03804006 A CN03804006 A CN 03804006A CN 1633515 B CN1633515 B CN 1633515B
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CN
China
Prior art keywords
aperture mask
mask
collimation
base material
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN038040069A
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English (en)
Chinese (zh)
Other versions
CN1633515A (zh
Inventor
P·F·宝德
P·R·弗莱明
M·A·哈斯
T·W·凯利
D·V·莫里斯
S·西斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
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3M Innovative Properties Co
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Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of CN1633515A publication Critical patent/CN1633515A/zh
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Publication of CN1633515B publication Critical patent/CN1633515B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Electron Beam Exposure (AREA)
  • Picture Signal Circuits (AREA)
CN038040069A 2002-02-14 2003-01-21 制造电路用孔眼掩模 Expired - Fee Related CN1633515B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/076,003 US20030151118A1 (en) 2002-02-14 2002-02-14 Aperture masks for circuit fabrication
US10/076,003 2002-02-14
PCT/US2003/001751 WO2003069014A1 (en) 2002-02-14 2003-01-21 Aperture masks for circuit fabrication

Publications (2)

Publication Number Publication Date
CN1633515A CN1633515A (zh) 2005-06-29
CN1633515B true CN1633515B (zh) 2010-04-28

Family

ID=27660170

Family Applications (1)

Application Number Title Priority Date Filing Date
CN038040069A Expired - Fee Related CN1633515B (zh) 2002-02-14 2003-01-21 制造电路用孔眼掩模

Country Status (9)

Country Link
US (2) US20030151118A1 (https=)
EP (2) EP1474542B1 (https=)
JP (1) JP2005518478A (https=)
KR (1) KR20040091037A (https=)
CN (1) CN1633515B (https=)
AT (1) ATE431440T1 (https=)
AU (1) AU2003209312A1 (https=)
DE (1) DE60327597D1 (https=)
WO (1) WO2003069014A1 (https=)

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US6821348B2 (en) * 2002-02-14 2004-11-23 3M Innovative Properties Company In-line deposition processes for circuit fabrication
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US7603144B2 (en) 2003-01-02 2009-10-13 Cymbet Corporation Active wireless tagging system on peel and stick substrate
US7294209B2 (en) 2003-01-02 2007-11-13 Cymbet Corporation Apparatus and method for depositing material onto a substrate using a roll-to-roll mask
US6906436B2 (en) 2003-01-02 2005-06-14 Cymbet Corporation Solid state activity-activated battery device and method
US7098525B2 (en) * 2003-05-08 2006-08-29 3M Innovative Properties Company Organic polymers, electronic devices, and methods
US7279777B2 (en) * 2003-05-08 2007-10-09 3M Innovative Properties Company Organic polymers, laminates, and capacitors
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US20070178710A1 (en) * 2003-08-18 2007-08-02 3M Innovative Properties Company Method for sealing thin film transistors
US20050079418A1 (en) * 2003-10-14 2005-04-14 3M Innovative Properties Company In-line deposition processes for thin film battery fabrication
US7211351B2 (en) 2003-10-16 2007-05-01 Cymbet Corporation Lithium/air batteries with LiPON as separator and protective barrier and method
US20050130422A1 (en) * 2003-12-12 2005-06-16 3M Innovative Properties Company Method for patterning films
US7078937B2 (en) * 2003-12-17 2006-07-18 3M Innovative Properties Company Logic circuitry powered by partially rectified ac waveform
US6882897B1 (en) * 2004-01-05 2005-04-19 Dennis S. Fernandez Reconfigurable garment definition and production method
CN1957487A (zh) 2004-01-06 2007-05-02 Cymbet公司 具有一个或者更多个可限定层的层式阻挡物结构和方法
US7382040B2 (en) * 2004-01-15 2008-06-03 Matsushita Electric Industrial Co., Ltd. Organic field effect transistor and display using same
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US20060128165A1 (en) * 2004-12-13 2006-06-15 3M Innovative Properties Company Method for patterning surface modification
US7679686B2 (en) * 2004-12-30 2010-03-16 E. I. Du Pont De Nemours And Company Electronic device comprising a gamma correction unit, a process for using the electronic device, and a data processing system readable medium
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US7319153B2 (en) * 2005-07-29 2008-01-15 3M Innovative Properties Company 6,13-Bis(thienyl)pentacene compounds
US7615501B2 (en) * 2005-08-11 2009-11-10 3M Innovative Properties Company Method for making a thin film layer
US20070137568A1 (en) * 2005-12-16 2007-06-21 Schreiber Brian E Reciprocating aperture mask system and method
US7763114B2 (en) * 2005-12-28 2010-07-27 3M Innovative Properties Company Rotatable aperture mask assembly and deposition system
KR100687761B1 (ko) * 2006-03-06 2007-02-27 한국전자통신연구원 대량생산을 위한 분자 전자 소자 제조용 소자 홀더 및 이를이용한 분자 전자 소자의 제조 방법
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JP6529329B2 (ja) * 2015-05-01 2019-06-12 株式会社ブイ・テクノロジー タッチパネル製造方法、タッチパネルのガラス基板及びタッチパネル製造用マスク
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CN105353589B (zh) * 2015-12-01 2018-02-23 广州杰赛科技股份有限公司 一种高效pcb二次曝光方法
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CN110993562B (zh) * 2019-11-07 2023-09-29 复旦大学 一种基于全硅基掩膜版的薄膜器件的制备方法
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Also Published As

Publication number Publication date
JP2005518478A (ja) 2005-06-23
EP2060654A1 (en) 2009-05-20
CN1633515A (zh) 2005-06-29
KR20040091037A (ko) 2004-10-27
DE60327597D1 (de) 2009-06-25
EP1474542B1 (en) 2009-05-13
US20030151118A1 (en) 2003-08-14
AU2003209312A1 (en) 2003-09-04
ATE431440T1 (de) 2009-05-15
WO2003069014A1 (en) 2003-08-21
EP1474542A1 (en) 2004-11-10
US20060057857A1 (en) 2006-03-16

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