CN1612370A - 半导体发光器件及其制造方法 - Google Patents
半导体发光器件及其制造方法 Download PDFInfo
- Publication number
- CN1612370A CN1612370A CNA2004100900815A CN200410090081A CN1612370A CN 1612370 A CN1612370 A CN 1612370A CN A2004100900815 A CNA2004100900815 A CN A2004100900815A CN 200410090081 A CN200410090081 A CN 200410090081A CN 1612370 A CN1612370 A CN 1612370A
- Authority
- CN
- China
- Prior art keywords
- light emitting
- semiconductor device
- contact layer
- emitting semiconductor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 title claims description 57
- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000000758 substrate Substances 0.000 claims abstract description 90
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- 238000000605 extraction Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 178
- 238000009792 diffusion process Methods 0.000 description 23
- 238000005498 polishing Methods 0.000 description 17
- 238000003466 welding Methods 0.000 description 15
- 238000005036 potential barrier Methods 0.000 description 10
- 239000002800 charge carrier Substances 0.000 description 8
- 239000012790 adhesive layer Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000009499 grossing Methods 0.000 description 5
- 101150064138 MAP1 gene Proteins 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910005555 GaZnO Inorganic materials 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000011435 rock Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229960002163 hydrogen peroxide Drugs 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000001741 metal-organic molecular beam epitaxy Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (21)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP371846/03 | 2003-10-31 | ||
JP371846/2003 | 2003-10-31 | ||
JP2003371846A JP4332407B2 (ja) | 2003-10-31 | 2003-10-31 | 半導体発光素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1612370A true CN1612370A (zh) | 2005-05-04 |
CN100385692C CN100385692C (zh) | 2008-04-30 |
Family
ID=34543977
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100900815A Active CN100385692C (zh) | 2003-10-31 | 2004-11-01 | 半导体发光器件及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7166865B2 (zh) |
JP (1) | JP4332407B2 (zh) |
CN (1) | CN100385692C (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101809769B (zh) * | 2007-10-10 | 2011-12-14 | 信越半导体株式会社 | 化合物半导体外延晶片及其制造方法 |
CN101897047B (zh) * | 2007-12-14 | 2015-05-13 | 皇家飞利浦电子股份有限公司 | 具有键合界面的发光器件 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8097892B2 (en) * | 2006-02-14 | 2012-01-17 | Showa Denko K.K. | Light-emitting diode |
JP2007258672A (ja) * | 2006-02-22 | 2007-10-04 | Sharp Corp | 発光ダイオード及びその製造方法 |
JP2007299846A (ja) * | 2006-04-28 | 2007-11-15 | Sharp Corp | 半導体発光素子及びその製造方法 |
EP2092576A1 (en) * | 2006-11-17 | 2009-08-26 | 3M Innovative Properties Company | Optical bonding composition for led light source |
CN101536201A (zh) * | 2006-11-17 | 2009-09-16 | 3M创新有限公司 | 具有光学提取器的平面化发光二极管 |
WO2008063884A1 (en) * | 2006-11-20 | 2008-05-29 | 3M Innovative Properties Company | Optical bonding composition for led light source |
JP4561732B2 (ja) * | 2006-11-20 | 2010-10-13 | トヨタ自動車株式会社 | 移動体位置測位装置 |
JP2009016560A (ja) * | 2007-07-04 | 2009-01-22 | Sharp Corp | 半導体発光素子 |
WO2009015386A1 (en) * | 2007-07-26 | 2009-01-29 | The Regents Of The University Of California | Light emitting diodes with a p-type surface |
WO2009089198A1 (en) * | 2008-01-08 | 2009-07-16 | Moxtronics, Inc. | High-performance heterostructure light emitting devices and methods |
US8299480B2 (en) * | 2008-03-10 | 2012-10-30 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing same, and epitaxial wafer |
KR100999684B1 (ko) * | 2009-10-21 | 2010-12-08 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
KR102282141B1 (ko) | 2014-09-02 | 2021-07-28 | 삼성전자주식회사 | 반도체 발광소자 |
CN105489719B (zh) * | 2015-12-31 | 2018-09-11 | 天津三安光电有限公司 | 一种带应变调和多量子阱结构的红外发光二极管 |
US10665750B2 (en) * | 2017-11-22 | 2020-05-26 | Epistar Corporation | Semiconductor device |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3230638B2 (ja) | 1993-02-10 | 2001-11-19 | シャープ株式会社 | 発光ダイオードの製造方法 |
US5376580A (en) | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
JP3239061B2 (ja) | 1996-02-29 | 2001-12-17 | シャープ株式会社 | 発光ダイオード及びその製造方法 |
JP3507716B2 (ja) | 1998-12-25 | 2004-03-15 | シャープ株式会社 | 半導体発光素子の製造方法 |
JP2000216428A (ja) * | 1999-01-25 | 2000-08-04 | Rohm Co Ltd | 半導体発光素子の製法 |
JP3725382B2 (ja) | 1999-11-11 | 2005-12-07 | 株式会社東芝 | 半導体素子の製造方法および半導体発光素子の製造方法 |
JP2001291895A (ja) * | 2000-04-06 | 2001-10-19 | Sharp Corp | 半導体発光素子 |
JP2002111052A (ja) * | 2000-09-28 | 2002-04-12 | Toshiba Corp | 半導体発光素子及びその製造方法 |
JP4091261B2 (ja) * | 2000-10-31 | 2008-05-28 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
JP4153673B2 (ja) * | 2001-03-29 | 2008-09-24 | 株式会社東芝 | 半導体素子の製造方法 |
US20040104395A1 (en) * | 2002-11-28 | 2004-06-03 | Shin-Etsu Handotai Co., Ltd. | Light-emitting device, method of fabricating the same, and OHMIC electrode structure for semiconductor device |
-
2003
- 2003-10-31 JP JP2003371846A patent/JP4332407B2/ja not_active Expired - Fee Related
-
2004
- 2004-10-05 US US10/957,614 patent/US7166865B2/en active Active
- 2004-11-01 CN CNB2004100900815A patent/CN100385692C/zh active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101809769B (zh) * | 2007-10-10 | 2011-12-14 | 信越半导体株式会社 | 化合物半导体外延晶片及其制造方法 |
CN101897047B (zh) * | 2007-12-14 | 2015-05-13 | 皇家飞利浦电子股份有限公司 | 具有键合界面的发光器件 |
Also Published As
Publication number | Publication date |
---|---|
CN100385692C (zh) | 2008-04-30 |
US7166865B2 (en) | 2007-01-23 |
US20050093015A1 (en) | 2005-05-05 |
JP4332407B2 (ja) | 2009-09-16 |
JP2005136271A (ja) | 2005-05-26 |
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PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: XIAMEN SAN AN PHOTOELECTRIC CO., LTD. Free format text: FORMER OWNER: SHARP CORPORATION Effective date: 20150127 |
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C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; TO: 361009 XIAMEN, FUJIAN PROVINCE |
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TR01 | Transfer of patent right |
Effective date of registration: 20150127 Address after: Siming District of Xiamen City, Fujian province 361009 Luling Road No. 1721-1725 Patentee after: XIAMEN SANAN OPTOELECTRONICS CO., LTD. Address before: Osaka Japan Patentee before: Sharp Corporation |
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EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20050504 Assignee: Integrated circuit Co., Ltd is pacified by Xiamen City three Assignor: XIAMEN SANAN OPTOELECTRONICS CO., LTD. Contract record no.: 2016120000007 Denomination of invention: Semiconductor light emitting device and method of fabricating the same Granted publication date: 20080430 License type: Common License Record date: 20160311 |
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LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model |