CN1604699A - 有机电致发光面板 - Google Patents

有机电致发光面板 Download PDF

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CN1604699A
CN1604699A CNA2004100803158A CN200410080315A CN1604699A CN 1604699 A CN1604699 A CN 1604699A CN A2004100803158 A CNA2004100803158 A CN A2004100803158A CN 200410080315 A CN200410080315 A CN 200410080315A CN 1604699 A CN1604699 A CN 1604699A
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松本昭一郎
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Sanyo Electric Co Ltd
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Abstract

本发明涉及提高有机电致发光面板的开口率。本发明的有机EL面板中，驱动晶体管2的漏极区域2d通过触点连接到电源线PL，源极区域2s通过触点连接到有机EL组件4的透明电极。而且，沟道区域2c弯曲成大致L字形。因此，栅极电极2g可从与电源线PL平行的方向笔直地延伸于沟道区域2c上，使配置单纯化，藉此提高开口率。

Description

有机电致发光面板
技术区域
本发明涉及使至少具有有机发光层的有机电致发光组件呈行列状配置在一对电极间而成的有机电致发光面板。
背景技术
一直以来，有机电致发光(Electroluminescence，简称EL)显示器作为取代液晶显示器的下一代平面显示器之一而受到瞩目。此显示面板可通过改变使用在各像素的有机发光层的发光材料，而决定各像素的发光色。因此，使各像素的发光色互不相同而进行RGB显示。
如上述的有机EL面板中，要进行明亮显示，只要增加供给各有机EL组件的电流量即可。然而，增加电流量的话，会存在使有机EL组件的寿命相应缩短的问题。因此，要求将各像素中的发光区域的面积(开口率)尽可能地加大。通过提高开口率，可在将流通于有机EL组件的电流抑制在较小值的同时，实现明亮的显示(例如参照专利文献日本专利特开2001-290441号公报)。
发明内容
在此，提高开口率指提高各像素中有机EL组件的发光区域所占的比例。主动型有机EL面板中，各像素设有用以驱动有机EL组件的最少两个薄膜晶体管(TFT)，尤其用以控制有机EL组件的驱动电流的驱动薄膜晶体管，电性地配置在电源线与有机EL组件中间，因此在平面配置中配置在接近电源线及有机EL组件两者的位置。另一方面，该驱动薄膜晶体管根据栅极电压来控制有机EL组件的驱动电流，并成为栅极长度很长的构成。因此，存在该驱动薄膜晶体管配置困难的问题。尤其是，该驱动薄膜晶体管的栅极线必须绕过位于驱动薄膜晶体管两端的源极、漏极电极的触点(contact)，因而存在配线导致开口率降低的问题。
本发明涉及使至少具有有机发光层的有机EL组件呈行列状配置在一对电极间而成的有机EL面板，其特征为：将来自电源线的电流供给有机EL组件的驱动晶体管，其具有弯曲成大致L字形的半导体层，且在该半导体层的两端形成源极区域与漏极区域，并在源极区域与漏极区域的中间部，形成由呈直线状延伸于大致L字形的半导体层的一边上的栅极电极所覆盖的沟道区域。
此外，优选电源线在列方向延伸，半导体层由沿着该电源线延伸的第一部分，与相对该第一部分弯曲成大致直角的第二部分所构成。
另外，栅极电极优选在与第一部分相同的方向延伸。
另外，优选第一部分的前端部与电源线连接，第二部分与有机EL组件连接。
另外，优选电源线具有向驱动晶体管侧突出的突出部，该突出部与第一部分通过触点而连接。
如上所述，根据本发明，驱动晶体管具有弯曲成大致L字形(L字形或倒L字形)形状的半导体层。因而，其配置的自由度提高，尤其可将栅极电极形成为直线状，使栅极电极的配线图案单纯化，从而可以提高开口率。
附图说明
图1为根据一实施例的典型的平面构成图。
图2为根据一实施例的平面构成图。
图3为根据一实施例的关键部位的剖面图。
具体实施方式
下面结合附图说明本发明的具体实施例。
图1为根据一实施例的典型的构成。虽然对应一列像素设置一条数据线DL，但在每隔一列的像素列间各配置两条。此外，电源线PL设在未设置数据线DL的像素列间，栅极线GL设在各像素行间。
各像素设有选择薄膜晶体管1、驱动薄膜晶体管2、保持电容3以及有机EL组件4。在本例中选择薄膜晶体管1为p沟道薄膜晶体管，且源极连接到数据线DL，漏极连接到驱动薄膜晶体管2的栅极，栅极连接到栅极线GL。在本例中驱动薄膜晶体管2为p沟道薄膜晶体管，且源极连接到电源线PL，漏极连接到有机EL组件4的阳极。有机EL组件4的阴极接地。此外，驱动薄膜晶体管2的栅极连接保持电容3的一端，保持电容3的另一端连接到保持电容线SL。
因而，通过将栅极线GL设为低电平，该行的选择薄膜晶体管1即导通。在该状态下，依序将该列的像素数据供给各列的数据线DL，藉此将驱动薄膜晶体管2的栅极设定为像素数据的电压，且该电压保持在保持电容3。因此，基于像素数据的电流从电源线PL通过驱动薄膜晶体管2供给有机EL组件4，而进行基于像素数据的发光。
在此，本实施例中，各像素分别以R(红)、G(绿)、B(蓝)、W(白)的四色发光，形成各行以同一色发光的条纹(stripe)型。本例中，RBGW的像素在行方向并列。尤其，设定R与B的像素大小(宽度)大致相同，G的像素最大，W的像素最小。而且，电源线PL形成有：配置在R的像素列与B的像素列之间，以及配置在G的像素列与W的像素列之间的两种类。亦即，电源线PL在R的像素列与B的像素列共享，在G的像素列与W的像素列共享。
像素的大小取决于有机EL组件4的电流效率。此处，电流效率指每一单位电流的发光量，也称为外部量子效率。本实施例的情况对应于在显示中利用的最大电流量。亦即，存在必要最大电流越大电流效率越差的关系。该电流效率由有机EL组件4的有机发光材料等决定。
此外，在本例中，W的有机EL组件4的电流效率最高，G的有机EL组件4的电流效率最低。为了维持全彩显示中的色平衡而必须对电流效率差的颜色加大电流量。另一方面，由于有机EL组件4的寿命根据电流密度而定，因而需要使各组件中的电流密度达到一定的要求。因此，使电流效率越差的颜色的有机EL组件4面积越大，以使各有机EL组件4的电流密度保持一定。
另外，在电流效率最好的W与最差的G的像素列共享一条电源线PL，在电流效率中等的R、G的像素列共享一条电源线PL。藉此，各电源线PL中的电流量将变得比较接近。电源线PL的线宽取决于最大电流量，但线宽有其上限，无法过大。如本实施例获得电流量的平衡，可使两种类的电源线PL的电流量相接近而有效地进行电流供给。
以上的情形必须针对各像素列配置一条电源线PL与一条数据线DL，且这两条线配置在各像素列间。根据设计规则，通常在各配线线间设置4μm左右的间隙。此处考虑在一个像素列间设置两条电源线PL，且一条电源线PL的线宽为10μm左右的情况。这种情况下，两条电源线PL加起来的宽度为24μm。本实施例中，将其统一为一条电源线PL，此时可知线宽在15μm左右即可。这是因为虽将两条电源线PL合并为一条时需要20μm，但就绝对的值来说必要的裕量取决于一条电源线的情形，因此可以缩小线宽，缩小的值与两条线之间的4μm间隙加起来，共可减少9μm的线宽。这样，可减少配线配置所需的面积，而可加大开口率。
另外，本实施例中，虽电流效率为W、R、B、G的顺序，但根据发光材料的不同可为不同的顺序。此外，在RGB三色的情况下，对发光效率好的R可将电源线设为一条，而比较差的G和B共享一条电源线。
图2显示具体的配置构成。选择薄膜晶体管1由半导体层形成，且其栅极线GL的一部分突出到沟道区域1c上而形成栅极电极1g。另外，选择薄膜晶体管1的源极区域1s通过触点而与上方的数据线DL连接。此外，漏极区域1d的半导体层根据原样成为电容电极3a，且与电容电极3a相向配置有保持电容线(未图标)而形成保持电容3。
驱动薄膜晶体管2的栅极电极2g与电容电极3a通过触点连接。栅极电极2g与电源线PL平行且呈直线状延伸，且一部分配置在电源线PL的下方。
此外，构成驱动薄膜晶体管2的半导体层(图中的2s、2c、2d的部分，亦即后述的符号2p)从设于自电源线PL向像素区域的内侧突出的部分的触点沿着上方延伸后，形成以直角弯曲的L字形或倒L字形。而且，另一端通过触点而与位于上方的有机EL组件4的阳极连接。
本例中，驱动薄膜晶体管2为p沟道型，连接到电源线PL的部分为源极，连接到有机EL组件4的阳极为漏极。此外，栅极电极覆盖半导体层的源极、漏极间的未掺杂不纯物的沟道区域而形成。
如上所述，通过将驱动薄膜晶体管2设为L字形(或倒L字形)，可将栅极电极2g的至少一部分配置在电源线PL的下侧，而可利用电源线PL的下侧空间以提高开口率。
另外，与有机EL组件4的触点(图中2s附近)位于像素区域的内侧，因此栅极电极2g成为直线状，可防止开口率因栅极电极要绕过触点而减少。
再者，本实施例中，由于将像素区域的高度设为定值，因此可使栅极线GL成为直线。此外，虽然改变了像素区域的宽度，但是由于条纹型的缘故，可使电源线PL及数据线DL成为直线。再者，通过改变像素区域的内部的发光区域的形状，达成发光区域的有效率的配置。例如，G的像素中，由于像素区域的宽度很宽，可将保持电容3设在选择薄膜晶体管1的侧方，使发光区域延伸至上方，而有效利用像素区域。
此外，所有驱动薄膜晶体管的大小设为相同，并且与电源线的构成也设为相同。亦即，图中与驱动薄膜晶体管2的电源线PL的触点以及与有机EL组件4的触点位于上下方向同一位置，且为从电源线PL来看的相同的位置。因而，可容易地使各像素中驱动薄膜晶体管2的电流供给能力一致。
另外，图2中，有机EL组件4中的透明电极的部分以两点划线表示，但为使图容易观看而缩小显示。
图3是一像素的发光区域与驱动薄膜晶体管的部分构成的剖面图(图2的X-X剖面图)，显示沿着L字形的驱动薄膜晶体管2呈直角弯曲的线的剖面。在玻璃基板30上整个面形成由SiN与SiO2的层积所构成的缓冲层11，并在其上的预定的区域(形成薄膜晶体管的区域)形成多晶硅的半导体层(主动层)2p。
覆盖主动层2p及缓冲层11而在整个面形成栅极绝缘膜13，该栅极绝缘膜13为例如层积SiO2及SiN而形成。在该栅极绝缘膜13上方，且在沟道区域2c之上形成有例如铬的栅极电极2g。然后，将栅极电极2g作为屏蔽，通过将不纯物掺杂至主动层2p，而在该主动层2p的位于栅极电极下方的中央部分形成未掺杂不纯物的沟道区域2c，以及位于沟道区域2c两侧的经掺杂不纯物的源极区域2s及漏极区域2d。
然后，覆盖栅极绝缘膜13与栅极电极2g而在整个面形成层间绝缘膜15，并在层间绝缘膜15内部的源极区域2s、漏极区域2d的上部形成接触孔，透过该接触孔，形成配置在层间绝缘膜15上面的源极电极53及漏极电极26。另外，使电源线(未图标)连接到源极电极53。在此，如上所述形成的驱动薄膜晶体管虽在本例中为p沟道薄膜晶体管，但也可设为n沟道薄膜晶体管。
覆盖层间绝缘膜15而在整个面形成平坦化膜17，在该平坦化膜17之上设置具有有机EL组件4的阳极的功能的透明电极61。此外，在漏极电极26上方的平坦化膜17形成贯穿该平坦化膜的接触孔，通过该接触孔，漏极电极26与透明电极61相连接。
层间绝缘膜15及平坦化膜17通常利用丙烯树脂等有机膜，但也可利用四乙氧基硅烷(TEOS)等无机膜。此外，源极电极53、漏极电极26可利用铝等金属，而透明电极61则通常利用铟锡氧化物(ITO)。
在透明电极61之上形成有：形成于整个面的空穴传输层62；形成比发光区域稍大的有机发光层63；由形成于整个面的电子传输层64所构成的有机层65；以及作为阴极的形成于整个面的金属(例如铝)的对向电极66。
在透明电极61的外围部分上的空穴传输层62的下方形成有平坦化膜67，通过该平坦化膜67，将各像素的发光区域限定在透明电极61上且空穴传输层62与透明电极61直接相接的部分，此部分成为发光区域。另外，平坦化膜67通常利用丙烯树脂等有机膜，但也可利用TEOS等无机膜。
另外，空穴传输层62、有机发光层63和电子传输层64使用通常利用于有机EL组件的材料，并根据有机发光层63的材料(通常是掺杂剂)而决定发光色。例如，在空穴传输层62使用NPB、在红色的有机发光层63使用TBADN加DCJTB、在绿色的有机发光层63使用Alq3加CFDMQA、在蓝色的有机发光层63使用TBADN加TBP、在电子传输层64使用Alq3等。
如上所述构成中，驱动薄膜晶体管按照栅极电极2g的设定电压而导通时，来自电源线的电流即从透明电极61流至对向电极66，且通过此电流在有机发光层63中激起发光，此光通过透明电极61、平坦化膜17、层间绝缘膜15、栅极绝缘膜13及玻璃基板30，向图中的下方射出。

Claims (5)

1.一种有机电致发光面板，其采用至少具有有机发光层的有机电致发光组件呈行列状配置在一对电极间而成，其特征为：
将来自电源线的电流供给该有机电致发光组件的驱动晶体管，其具有弯曲成大致L字形的半导体层；
在该半导体层的两端形成源极区域与漏极区域；及
在源极区域与漏极区域的中间部，形成由呈直线状延伸于该大致L字形的半导体层之一边上的栅极电极所覆盖的沟道区域。
2.如权利要求1所述的有机电致发光面板，其中，该电源线在列方向延伸，该半导体层由沿着该电源线延伸的第一部分与相对该第一部分弯曲成大致直角的第二部分所构成。
3.如权利要求2所述的有机电致发光面板，其中，该栅极电极在与该第一部分相同的方向延伸。
4.如权利要求2或3所述的有机电致发光面板，其中，该第一部分的前端部与该电源线连接，该第二部分与该有机电致发光组件连接。
5.如权利要求4所述的有机电致发光面板，其中，该电源线具有向该驱动晶体管侧突出的突出部，该突出部与该第一部分通过触点相连接。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102714213A (zh) * 2009-12-01 2012-10-03 伊格尼斯创新公司 高分辨率像素体系结构

Families Citing this family (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6822629B2 (en) * 2000-08-18 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
KR100548250B1 (ko) * 2003-08-09 2006-02-02 엘지전자 주식회사 표면 전도형 전계 방출 소자의 매트릭스 구조
CA2443206A1 (en) 2003-09-23 2005-03-23 Ignis Innovation Inc. Amoled display backplanes - pixel driver circuits, array architecture, and external compensation
US7199397B2 (en) * 2004-05-05 2007-04-03 Au Optronics Corporation AMOLED circuit layout
CA2472671A1 (en) 2004-06-29 2005-12-29 Ignis Innovation Inc. Voltage-programming scheme for current-driven amoled displays
JP4254675B2 (ja) * 2004-09-29 2009-04-15 カシオ計算機株式会社 ディスプレイパネル
JP4265515B2 (ja) * 2004-09-29 2009-05-20 カシオ計算機株式会社 ディスプレイパネル
US7382384B2 (en) * 2004-12-07 2008-06-03 Eastman Kodak Company OLED displays with varying sized pixels
US9799246B2 (en) 2011-05-20 2017-10-24 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US20140111567A1 (en) 2005-04-12 2014-04-24 Ignis Innovation Inc. System and method for compensation of non-uniformities in light emitting device displays
US8576217B2 (en) 2011-05-20 2013-11-05 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US8599191B2 (en) 2011-05-20 2013-12-03 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US9171500B2 (en) 2011-05-20 2015-10-27 Ignis Innovation Inc. System and methods for extraction of parasitic parameters in AMOLED displays
US10013907B2 (en) 2004-12-15 2018-07-03 Ignis Innovation Inc. Method and system for programming, calibrating and/or compensating, and driving an LED display
EP2688058A3 (en) 2004-12-15 2014-12-10 Ignis Innovation Inc. Method and system for programming, calibrating and driving a light emitting device display
US10012678B2 (en) 2004-12-15 2018-07-03 Ignis Innovation Inc. Method and system for programming, calibrating and/or compensating, and driving an LED display
US9275579B2 (en) 2004-12-15 2016-03-01 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
US9280933B2 (en) 2004-12-15 2016-03-08 Ignis Innovation Inc. System and methods for extraction of threshold and mobility parameters in AMOLED displays
CA2496642A1 (en) 2005-02-10 2006-08-10 Ignis Innovation Inc. Fast settling time driving method for organic light-emitting diode (oled) displays based on current programming
JP5355080B2 (ja) 2005-06-08 2013-11-27 イグニス・イノベイション・インコーポレーテッド 発光デバイス・ディスプレイを駆動するための方法およびシステム
US7898623B2 (en) * 2005-07-04 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Display device, electronic device and method of driving display device
CA2518276A1 (en) 2005-09-13 2007-03-13 Ignis Innovation Inc. Compensation technique for luminance degradation in electro-luminance devices
KR101293568B1 (ko) 2006-02-23 2013-08-06 삼성디스플레이 주식회사 표시 장치
WO2007118332A1 (en) 2006-04-19 2007-10-25 Ignis Innovation Inc. Stable driving scheme for active matrix displays
US7863612B2 (en) 2006-07-21 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Display device and semiconductor device
CA2556961A1 (en) 2006-08-15 2008-02-15 Ignis Innovation Inc. Oled compensation technique based on oled capacitance
KR101383712B1 (ko) * 2007-11-16 2014-04-09 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
JP2009288625A (ja) * 2008-05-30 2009-12-10 Sony Corp 電子回路およびパネル
JP4796635B2 (ja) * 2009-01-22 2011-10-19 株式会社沖データ 駆動回路、光プリントヘッド及び画像形成装置
JP5623107B2 (ja) * 2009-04-22 2014-11-12 キヤノン株式会社 半導体装置
US10319307B2 (en) 2009-06-16 2019-06-11 Ignis Innovation Inc. Display system with compensation techniques and/or shared level resources
CA2688870A1 (en) 2009-11-30 2011-05-30 Ignis Innovation Inc. Methode and techniques for improving display uniformity
US9384698B2 (en) 2009-11-30 2016-07-05 Ignis Innovation Inc. System and methods for aging compensation in AMOLED displays
US9311859B2 (en) 2009-11-30 2016-04-12 Ignis Innovation Inc. Resetting cycle for aging compensation in AMOLED displays
CA2669367A1 (en) 2009-06-16 2010-12-16 Ignis Innovation Inc Compensation technique for color shift in displays
US10996258B2 (en) 2009-11-30 2021-05-04 Ignis Innovation Inc. Defect detection and correction of pixel circuits for AMOLED displays
US8803417B2 (en) 2009-12-01 2014-08-12 Ignis Innovation Inc. High resolution pixel architecture
CA2687631A1 (en) 2009-12-06 2011-06-06 Ignis Innovation Inc Low power driving scheme for display applications
US10089921B2 (en) 2010-02-04 2018-10-02 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
CA2692097A1 (en) 2010-02-04 2011-08-04 Ignis Innovation Inc. Extracting correlation curves for light emitting device
US10163401B2 (en) 2010-02-04 2018-12-25 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US9881532B2 (en) 2010-02-04 2018-01-30 Ignis Innovation Inc. System and method for extracting correlation curves for an organic light emitting device
US10176736B2 (en) 2010-02-04 2019-01-08 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
US20140313111A1 (en) 2010-02-04 2014-10-23 Ignis Innovation Inc. System and methods for extracting correlation curves for an organic light emitting device
CA2696778A1 (en) 2010-03-17 2011-09-17 Ignis Innovation Inc. Lifetime, uniformity, parameter extraction methods
US8907991B2 (en) 2010-12-02 2014-12-09 Ignis Innovation Inc. System and methods for thermal compensation in AMOLED displays
US9530349B2 (en) 2011-05-20 2016-12-27 Ignis Innovations Inc. Charged-based compensation and parameter extraction in AMOLED displays
US9466240B2 (en) 2011-05-26 2016-10-11 Ignis Innovation Inc. Adaptive feedback system for compensating for aging pixel areas with enhanced estimation speed
EP3293726B1 (en) 2011-05-27 2019-08-14 Ignis Innovation Inc. Systems and methods for aging compensation in amoled displays
US9324268B2 (en) 2013-03-15 2016-04-26 Ignis Innovation Inc. Amoled displays with multiple readout circuits
US10089924B2 (en) 2011-11-29 2018-10-02 Ignis Innovation Inc. Structural and low-frequency non-uniformity compensation
US8937632B2 (en) 2012-02-03 2015-01-20 Ignis Innovation Inc. Driving system for active-matrix displays
US9190456B2 (en) 2012-04-25 2015-11-17 Ignis Innovation Inc. High resolution display panel with emissive organic layers emitting light of different colors
US9747834B2 (en) 2012-05-11 2017-08-29 Ignis Innovation Inc. Pixel circuits including feedback capacitors and reset capacitors, and display systems therefore
US8922544B2 (en) 2012-05-23 2014-12-30 Ignis Innovation Inc. Display systems with compensation for line propagation delay
US9336717B2 (en) 2012-12-11 2016-05-10 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9786223B2 (en) 2012-12-11 2017-10-10 Ignis Innovation Inc. Pixel circuits for AMOLED displays
US9830857B2 (en) 2013-01-14 2017-11-28 Ignis Innovation Inc. Cleaning common unwanted signals from pixel measurements in emissive displays
US9171504B2 (en) 2013-01-14 2015-10-27 Ignis Innovation Inc. Driving scheme for emissive displays providing compensation for driving transistor variations
EP3043338A1 (en) 2013-03-14 2016-07-13 Ignis Innovation Inc. Re-interpolation with edge detection for extracting an aging pattern for amoled displays
JP5849981B2 (ja) * 2013-03-25 2016-02-03 ソニー株式会社 表示装置および電子機器
CN105144361B (zh) 2013-04-22 2019-09-27 伊格尼斯创新公司 用于oled显示面板的检测系统
DE112014003719T5 (de) 2013-08-12 2016-05-19 Ignis Innovation Inc. Kompensationsgenauigkeit
US9741282B2 (en) 2013-12-06 2017-08-22 Ignis Innovation Inc. OLED display system and method
US9761170B2 (en) 2013-12-06 2017-09-12 Ignis Innovation Inc. Correction for localized phenomena in an image array
US9502653B2 (en) 2013-12-25 2016-11-22 Ignis Innovation Inc. Electrode contacts
US20150234227A1 (en) * 2014-02-17 2015-08-20 Samsung Display Co., Ltd. Liquid crystal display and method of manufacturing the same
DE102015206281A1 (de) 2014-04-08 2015-10-08 Ignis Innovation Inc. Anzeigesystem mit gemeinsam genutzten Niveauressourcen für tragbare Vorrichtungen
KR102484383B1 (ko) * 2014-09-30 2023-01-03 엘지디스플레이 주식회사 유기발광다이오드 표시패널 및 이의 표시장치
CA2879462A1 (en) 2015-01-23 2016-07-23 Ignis Innovation Inc. Compensation for color variation in emissive devices
CA2889870A1 (en) 2015-05-04 2016-11-04 Ignis Innovation Inc. Optical feedback system
CA2892714A1 (en) 2015-05-27 2016-11-27 Ignis Innovation Inc Memory bandwidth reduction in compensation system
CA2900170A1 (en) 2015-08-07 2017-02-07 Gholamreza Chaji Calibration of pixel based on improved reference values
CN114758624B (zh) * 2022-03-31 2023-07-04 武汉天马微电子有限公司 像素电路及其驱动方法、阵列基板、显示面板和显示装置

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07109573A (ja) 1993-10-12 1995-04-25 Semiconductor Energy Lab Co Ltd ガラス基板および加熱処理方法
US5684365A (en) 1994-12-14 1997-11-04 Eastman Kodak Company TFT-el display panel using organic electroluminescent media
JP3256110B2 (ja) 1995-09-28 2002-02-12 シャープ株式会社 液晶表示装置
JP3069280B2 (ja) 1995-12-12 2000-07-24 松下電器産業株式会社 アクティブマトリックス型液晶表示素子及びその駆動方法
WO1998036407A1 (en) 1997-02-17 1998-08-20 Seiko Epson Corporation Display device
JP3541625B2 (ja) 1997-07-02 2004-07-14 セイコーエプソン株式会社 表示装置及びアクティブマトリクス基板
JP3629939B2 (ja) 1998-03-18 2005-03-16 セイコーエプソン株式会社 トランジスタ回路、表示パネル及び電子機器
JP2000214800A (ja) * 1999-01-20 2000-08-04 Sanyo Electric Co Ltd エレクトロルミネッセンス表示装置
US6724149B2 (en) 1999-02-24 2004-04-20 Sanyo Electric Co., Ltd. Emissive display device and electroluminescence display device with uniform luminance
US6366025B1 (en) 1999-02-26 2002-04-02 Sanyo Electric Co., Ltd. Electroluminescence display apparatus
JP3670923B2 (ja) 1999-02-26 2005-07-13 三洋電機株式会社 カラー有機ｅｌ表示装置
JP4497596B2 (ja) 1999-09-30 2010-07-07 三洋電機株式会社 薄膜トランジスタ及び表示装置
JP2001109405A (ja) 1999-10-01 2001-04-20 Sanyo Electric Co Ltd Ｅｌ表示装置
JP2001109395A (ja) 1999-10-01 2001-04-20 Sanyo Electric Co Ltd Ｅｌ表示装置
JP2001109404A (ja) * 1999-10-01 2001-04-20 Sanyo Electric Co Ltd Ｅｌ表示装置
US6307322B1 (en) 1999-12-28 2001-10-23 Sarnoff Corporation Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage
US6747638B2 (en) * 2000-01-31 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Adhesion type area sensor and display device having adhesion type area sensor
JP2001318627A (ja) * 2000-02-29 2001-11-16 Semiconductor Energy Lab Co Ltd 発光装置
TW521237B (en) * 2000-04-18 2003-02-21 Semiconductor Energy Lab Light emitting device
US6570584B1 (en) 2000-05-15 2003-05-27 Eastman Kodak Company Broad color gamut display
JP5030345B2 (ja) 2000-09-29 2012-09-19 三洋電機株式会社 半導体装置
JP3736399B2 (ja) 2000-09-20 2006-01-18 セイコーエプソン株式会社 アクティブマトリクス型表示装置の駆動回路及び電子機器及び電気光学装置の駆動方法及び電気光学装置
JP4925528B2 (ja) * 2000-09-29 2012-04-25 三洋電機株式会社 表示装置
JP2002251167A (ja) 2001-02-26 2002-09-06 Sanyo Electric Co Ltd 表示装置
JP4380954B2 (ja) * 2001-09-28 2009-12-09 三洋電機株式会社 アクティブマトリクス型表示装置
JP2003257645A (ja) 2002-03-05 2003-09-12 Sanyo Electric Co Ltd 発光装置およびその製造方法
JP2003308042A (ja) * 2002-04-17 2003-10-31 Hitachi Ltd 画像表示装置
US6919681B2 (en) * 2003-04-30 2005-07-19 Eastman Kodak Company Color OLED display with improved power efficiency
US6771028B1 (en) * 2003-04-30 2004-08-03 Eastman Kodak Company Drive circuitry for four-color organic light-emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102714213A (zh) * 2009-12-01 2012-10-03 伊格尼斯创新公司 高分辨率像素体系结构

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