JP2005106993A - 有機elパネル - Google Patents
有機elパネル Download PDFInfo
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- JP2005106993A JP2005106993A JP2003337933A JP2003337933A JP2005106993A JP 2005106993 A JP2005106993 A JP 2005106993A JP 2003337933 A JP2003337933 A JP 2003337933A JP 2003337933 A JP2003337933 A JP 2003337933A JP 2005106993 A JP2005106993 A JP 2005106993A
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- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000011159 matrix material Substances 0.000 claims description 3
- 238000004020 luminiscence type Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 34
- 239000003990 capacitor Substances 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000005525 hole transport Effects 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- OBAJPWYDYFEBTF-UHFFFAOYSA-N 2-tert-butyl-9,10-dinaphthalen-2-ylanthracene Chemical compound C1=CC=CC2=CC(C3=C4C=CC=CC4=C(C=4C=C5C=CC=CC5=CC=4)C4=CC=C(C=C43)C(C)(C)C)=CC=C21 OBAJPWYDYFEBTF-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
- HXWWMGJBPGRWRS-CMDGGOBGSA-N 4- -2-tert-butyl-6- -4h-pyran Chemical compound O1C(C(C)(C)C)=CC(=C(C#N)C#N)C=C1\C=C\C1=CC(C(CCN2CCC3(C)C)(C)C)=C2C3=C1 HXWWMGJBPGRWRS-CMDGGOBGSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
- G09G2300/0452—Details of colour pixel setup, e.g. pixel composed of a red, a blue and two green components
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
【解決手段】駆動トランジスタ2は、ドライン領域2dが、コンタクトを介し電源ラインPLに接続され、ソース2s領域がコンタクトを介し、有機EL素子4の透明電極に接続されている。そして、チャネル領域2cは、略L字型に折れ曲がっている。そこで、ゲート電極2gは、電源ラインPLと平行な方向からチャネル領域2c上に真っすぐのばすことができ、その配置が単純化され、これによって開口率を上昇することができる。
【選択図】図2
Description
Claims (5)
- 一対の電極間に少なくとも有機発光層を有する有機EL素子を行列配置した有機ELパネルであって、
前記有機EL素子に電源ラインからの電流を供給する駆動トランジスタは、略L字型に折れ曲がる形状の半導体層を有し、
この半導体層の両端部にはソース領域と、ドレイン領域が形成されており、
ソース領域とドレイン領域の中間部には、前記略L字型の半導体層の一辺上を直線状にのびるゲート電極によって覆われたチャネル領域が形成されていることを特徴とする有機ELパネル。 - 請求項1に記載の有機ELパネルにおいて、
前記電源ラインは、列方向に伸び、
前記半導体層は、前記電源ラインに沿って伸びる第1の部分と、ここからほぼ直角に折れ曲がる第2の部分とからなっていることを特徴とする有機ELパネル。 - 請求項2に記載の有機ELパネルにおいて、
前記ゲート電極は、前記第1の部分と同一方向に伸びることを特徴とする有機ELパネル。 - 請求項2または3に記載の有機ELパネルにおいて、
前記第1の部分の先端部は、前記電源ラインに接続され、前記第2の部分は前記有機EL素子に接続されることを特徴とする有機ELパネル。 - 請求項4に記載の有機ELパネルにおいて、
前記電源ラインは、前記駆動トランジスタ側に突出する突出部を有し、この突出部と前記第1の部分がコンタクトを介し接続されることを特徴とする有機ELパネル。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003337933A JP4443179B2 (ja) | 2003-09-29 | 2003-09-29 | 有機elパネル |
TW093126145A TWI253603B (en) | 2003-09-29 | 2004-08-31 | Organic EL panel |
KR1020040076885A KR100692329B1 (ko) | 2003-09-29 | 2004-09-24 | 유기 el 패널 |
CNB2004100803158A CN100570684C (zh) | 2003-09-29 | 2004-09-27 | 有机电致发光面板 |
US10/950,915 US7102293B2 (en) | 2003-09-29 | 2004-09-27 | Organic EL panel |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003337933A JP4443179B2 (ja) | 2003-09-29 | 2003-09-29 | 有機elパネル |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005106993A true JP2005106993A (ja) | 2005-04-21 |
JP4443179B2 JP4443179B2 (ja) | 2010-03-31 |
Family
ID=34386139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003337933A Expired - Lifetime JP4443179B2 (ja) | 2003-09-29 | 2003-09-29 | 有機elパネル |
Country Status (5)
Country | Link |
---|---|
US (1) | US7102293B2 (ja) |
JP (1) | JP4443179B2 (ja) |
KR (1) | KR100692329B1 (ja) |
CN (1) | CN100570684C (ja) |
TW (1) | TWI253603B (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7772767B2 (en) | 2006-02-23 | 2010-08-10 | Samsung Electronics Co., Ltd. | Display device |
JP2010272845A (ja) * | 2009-04-22 | 2010-12-02 | Canon Inc | 半導体装置 |
JP2014186258A (ja) * | 2013-03-25 | 2014-10-02 | Sony Corp | 表示装置および電子機器 |
JP2015028640A (ja) * | 2006-07-21 | 2015-02-12 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2022001942A (ja) * | 2005-07-04 | 2022-01-06 | 株式会社半導体エネルギー研究所 | 発光装置 |
US20220335892A1 (en) * | 2022-03-31 | 2022-10-20 | Wuhan Tianma Microelectronics Co., Ltd. | Pixel circuit, driving method thereof, array substrate, display panel, and display device |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6822629B2 (en) * | 2000-08-18 | 2004-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
KR100548250B1 (ko) * | 2003-08-09 | 2006-02-02 | 엘지전자 주식회사 | 표면 전도형 전계 방출 소자의 매트릭스 구조 |
CA2443206A1 (en) | 2003-09-23 | 2005-03-23 | Ignis Innovation Inc. | Amoled display backplanes - pixel driver circuits, array architecture, and external compensation |
US7199397B2 (en) * | 2004-05-05 | 2007-04-03 | Au Optronics Corporation | AMOLED circuit layout |
CA2472671A1 (en) | 2004-06-29 | 2005-12-29 | Ignis Innovation Inc. | Voltage-programming scheme for current-driven amoled displays |
JP4254675B2 (ja) * | 2004-09-29 | 2009-04-15 | カシオ計算機株式会社 | ディスプレイパネル |
JP4265515B2 (ja) * | 2004-09-29 | 2009-05-20 | カシオ計算機株式会社 | ディスプレイパネル |
US7382384B2 (en) * | 2004-12-07 | 2008-06-03 | Eastman Kodak Company | OLED displays with varying sized pixels |
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US20140111567A1 (en) | 2005-04-12 | 2014-04-24 | Ignis Innovation Inc. | System and method for compensation of non-uniformities in light emitting device displays |
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KR102484383B1 (ko) * | 2014-09-30 | 2023-01-03 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시패널 및 이의 표시장치 |
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Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07109573A (ja) | 1993-10-12 | 1995-04-25 | Semiconductor Energy Lab Co Ltd | ガラス基板および加熱処理方法 |
US5684365A (en) | 1994-12-14 | 1997-11-04 | Eastman Kodak Company | TFT-el display panel using organic electroluminescent media |
JP3256110B2 (ja) | 1995-09-28 | 2002-02-12 | シャープ株式会社 | 液晶表示装置 |
JP3069280B2 (ja) | 1995-12-12 | 2000-07-24 | 松下電器産業株式会社 | アクティブマトリックス型液晶表示素子及びその駆動方法 |
WO1998036407A1 (en) | 1997-02-17 | 1998-08-20 | Seiko Epson Corporation | Display device |
JP3541625B2 (ja) | 1997-07-02 | 2004-07-14 | セイコーエプソン株式会社 | 表示装置及びアクティブマトリクス基板 |
JP3629939B2 (ja) | 1998-03-18 | 2005-03-16 | セイコーエプソン株式会社 | トランジスタ回路、表示パネル及び電子機器 |
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US6724149B2 (en) | 1999-02-24 | 2004-04-20 | Sanyo Electric Co., Ltd. | Emissive display device and electroluminescence display device with uniform luminance |
US6366025B1 (en) | 1999-02-26 | 2002-04-02 | Sanyo Electric Co., Ltd. | Electroluminescence display apparatus |
JP3670923B2 (ja) | 1999-02-26 | 2005-07-13 | 三洋電機株式会社 | カラー有機el表示装置 |
JP4497596B2 (ja) | 1999-09-30 | 2010-07-07 | 三洋電機株式会社 | 薄膜トランジスタ及び表示装置 |
JP2001109405A (ja) | 1999-10-01 | 2001-04-20 | Sanyo Electric Co Ltd | El表示装置 |
JP2001109395A (ja) | 1999-10-01 | 2001-04-20 | Sanyo Electric Co Ltd | El表示装置 |
JP2001109404A (ja) * | 1999-10-01 | 2001-04-20 | Sanyo Electric Co Ltd | El表示装置 |
US6307322B1 (en) | 1999-12-28 | 2001-10-23 | Sarnoff Corporation | Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage |
US6747638B2 (en) * | 2000-01-31 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Adhesion type area sensor and display device having adhesion type area sensor |
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US6570584B1 (en) | 2000-05-15 | 2003-05-27 | Eastman Kodak Company | Broad color gamut display |
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JP4380954B2 (ja) * | 2001-09-28 | 2009-12-09 | 三洋電機株式会社 | アクティブマトリクス型表示装置 |
JP2003257645A (ja) | 2002-03-05 | 2003-09-12 | Sanyo Electric Co Ltd | 発光装置およびその製造方法 |
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US6919681B2 (en) * | 2003-04-30 | 2005-07-19 | Eastman Kodak Company | Color OLED display with improved power efficiency |
US6771028B1 (en) * | 2003-04-30 | 2004-08-03 | Eastman Kodak Company | Drive circuitry for four-color organic light-emitting device |
-
2003
- 2003-09-29 JP JP2003337933A patent/JP4443179B2/ja not_active Expired - Lifetime
-
2004
- 2004-08-31 TW TW093126145A patent/TWI253603B/zh active
- 2004-09-24 KR KR1020040076885A patent/KR100692329B1/ko active IP Right Grant
- 2004-09-27 CN CNB2004100803158A patent/CN100570684C/zh active Active
- 2004-09-27 US US10/950,915 patent/US7102293B2/en active Active
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Also Published As
Publication number | Publication date |
---|---|
KR20050031413A (ko) | 2005-04-06 |
CN1604699A (zh) | 2005-04-06 |
CN100570684C (zh) | 2009-12-16 |
US7102293B2 (en) | 2006-09-05 |
KR100692329B1 (ko) | 2007-03-09 |
TWI253603B (en) | 2006-04-21 |
JP4443179B2 (ja) | 2010-03-31 |
TW200512697A (en) | 2005-04-01 |
US20050073264A1 (en) | 2005-04-07 |
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