CN1577722B - 图形修正方法、系统、掩模、半导体器件制造方法和半导体器件 - Google Patents
图形修正方法、系统、掩模、半导体器件制造方法和半导体器件 Download PDFInfo
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- CN1577722B CN1577722B CN2004100500846A CN200410050084A CN1577722B CN 1577722 B CN1577722 B CN 1577722B CN 2004100500846 A CN2004100500846 A CN 2004100500846A CN 200410050084 A CN200410050084 A CN 200410050084A CN 1577722 B CN1577722 B CN 1577722B
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- China
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- correction
- correction value
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31769—Proximity effect correction
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
W | R1 | R2 | 修正量(mm) |
0≤W<100 | 0≤R1<100 | 0≤R2<100 | 0 |
0≤W<100 | 0≤R1<100 | 100≤R2<1000 | +10 |
0≤W<100 | 100≤R1<200 | 任意 | +15 |
0≤W<100 | 200≤R1<500 | 任意 | +20 |
0≤W<100 | 500≤R1 | 任意 | +30 |
100≤W<200 | 0≤R1<100 | 0≤R2<100 | 0 |
100≤W<200 | 0≤R1<100 | 100≤R2<1000 | +5 |
100≤W<200 | 100≤R1<200 | 任意 | +10 |
100≤W<200 | 200≤R1<500 | 任意 | +15 |
100≤W<200 | 500≤R1 | 任意 | +20 |
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP190341/2003 | 2003-07-02 | ||
JP2003190341A JP4177722B2 (ja) | 2003-07-02 | 2003-07-02 | パターン補正方法、パターン補正システム、マスク製造方法、半導体装置製造方法、及びパターン補正プログラム |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910253351.2A Division CN101713920B (zh) | 2003-07-02 | 2004-07-02 | 半导体器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1577722A CN1577722A (zh) | 2005-02-09 |
CN1577722B true CN1577722B (zh) | 2010-05-26 |
Family
ID=34113566
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2004100500846A Active CN1577722B (zh) | 2003-07-02 | 2004-07-02 | 图形修正方法、系统、掩模、半导体器件制造方法和半导体器件 |
CN200910253351.2A Active CN101713920B (zh) | 2003-07-02 | 2004-07-02 | 半导体器件 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910253351.2A Active CN101713920B (zh) | 2003-07-02 | 2004-07-02 | 半导体器件 |
Country Status (5)
Country | Link |
---|---|
US (3) | US7458057B2 (zh) |
JP (1) | JP4177722B2 (zh) |
KR (1) | KR100664635B1 (zh) |
CN (2) | CN1577722B (zh) |
TW (1) | TWI283360B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7914949B2 (en) * | 2005-02-24 | 2011-03-29 | International Business Machines Corporation | Method for testing a photomask |
US7419755B2 (en) * | 2005-06-22 | 2008-09-02 | Xerox Corporation | Carrier composition |
JP2007079517A (ja) | 2005-09-16 | 2007-03-29 | Toshiba Corp | パターン作成方法、パターン作成プログラム及び半導体装置の製造方法 |
JP4568228B2 (ja) * | 2005-12-28 | 2010-10-27 | 株式会社東芝 | 半導体集積回路の自動設計方法、半導体集積回路の自動設計システム及び半導体集積回路 |
US20080028359A1 (en) * | 2006-07-31 | 2008-01-31 | Stefan Blawid | Termination structure, a mask for manufacturing a termination structure, a lithographic process and a semiconductor device with a termination structure |
KR100790249B1 (ko) * | 2006-08-03 | 2008-01-02 | 동부일렉트로닉스 주식회사 | 마스크 제작 방법 및 상기 마스크를 이용한 소자 분리막형성 방법 |
KR100818415B1 (ko) * | 2006-12-27 | 2008-04-01 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
CN103376643B (zh) * | 2012-04-17 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | 校正布局图形的方法 |
US9778205B2 (en) * | 2014-03-25 | 2017-10-03 | Kla-Tencor Corporation | Delta die and delta database inspection |
CN107450266B (zh) * | 2016-05-31 | 2019-12-10 | 无锡华润上华科技有限公司 | 光学临近效应的修正方法及系统 |
JP7105582B2 (ja) * | 2018-03-09 | 2022-07-25 | キヤノン株式会社 | 決定方法、露光方法、露光装置、物品の製造方法及びプログラム |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1204860A (zh) * | 1997-04-25 | 1999-01-13 | 日本电气株式会社 | 用于带电粒子束的局部集团掩模 |
US5867253A (en) * | 1996-09-30 | 1999-02-02 | Mitsubishi Denki Kabushiki Kaisha | Method of correcting light proximity effect |
JP2002062633A (ja) * | 2000-08-22 | 2002-02-28 | Toshiba Corp | マスクパターン補正方法及び補正装置 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3454970B2 (ja) | 1995-05-24 | 2003-10-06 | 富士通株式会社 | マスクパターン補正方法、パターン形成方法及びフォトマスク |
JP3934719B2 (ja) | 1995-12-22 | 2007-06-20 | 株式会社東芝 | 光近接効果補正方法 |
JP3278057B2 (ja) * | 1998-12-14 | 2002-04-30 | 日本電気株式会社 | 半導体製造プロセスの光近接効果補正方法およびマスクデータ形成方法 |
US6467076B1 (en) * | 1999-04-30 | 2002-10-15 | Nicolas Bailey Cobb | Method and apparatus for submicron IC design |
JP2001092112A (ja) | 1999-09-24 | 2001-04-06 | Toshiba Corp | マスクパターンの補正システム及びマスクパターンの補正方法 |
JP3327394B2 (ja) * | 1999-10-25 | 2002-09-24 | 日本電気株式会社 | 光近接効果補正方法 |
JP4098460B2 (ja) * | 2000-06-16 | 2008-06-11 | 株式会社東芝 | 露光用マスク |
US6453457B1 (en) * | 2000-09-29 | 2002-09-17 | Numerical Technologies, Inc. | Selection of evaluation point locations based on proximity effects model amplitudes for correcting proximity effects in a fabrication layout |
JP4064617B2 (ja) | 2000-10-26 | 2008-03-19 | 株式会社東芝 | マスクパターン補正方法、マスクパターン補正装置、マスクパターン補正プログラムを格納した記録媒体、及び半導体装置の製造方法 |
US6721938B2 (en) * | 2001-06-08 | 2004-04-13 | Numerical Technologies, Inc. | Optical proximity correction for phase shifting photolithographic masks |
US7010764B2 (en) * | 2003-04-14 | 2006-03-07 | Takumi Technology Corp. | Effective proximity effect correction methodology |
US7080349B1 (en) * | 2004-04-05 | 2006-07-18 | Advanced Micro Devices, Inc. | Method of developing optimized optical proximity correction (OPC) fragmentation script for photolithographic processing |
-
2003
- 2003-07-02 JP JP2003190341A patent/JP4177722B2/ja not_active Expired - Lifetime
-
2004
- 2004-06-28 TW TW093118886A patent/TWI283360B/zh active
- 2004-06-30 KR KR1020040050034A patent/KR100664635B1/ko active IP Right Grant
- 2004-07-02 CN CN2004100500846A patent/CN1577722B/zh active Active
- 2004-07-02 CN CN200910253351.2A patent/CN101713920B/zh active Active
- 2004-07-02 US US10/882,217 patent/US7458057B2/en active Active
-
2008
- 2008-11-07 US US12/267,465 patent/US8065637B2/en active Active
-
2011
- 2011-10-31 US US13/285,650 patent/US8332784B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5867253A (en) * | 1996-09-30 | 1999-02-02 | Mitsubishi Denki Kabushiki Kaisha | Method of correcting light proximity effect |
CN1204860A (zh) * | 1997-04-25 | 1999-01-13 | 日本电气株式会社 | 用于带电粒子束的局部集团掩模 |
JP2002062633A (ja) * | 2000-08-22 | 2002-02-28 | Toshiba Corp | マスクパターン補正方法及び補正装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2005024903A (ja) | 2005-01-27 |
US20050031976A1 (en) | 2005-02-10 |
CN101713920B (zh) | 2014-10-15 |
TW200515225A (en) | 2005-05-01 |
US8065637B2 (en) | 2011-11-22 |
TWI283360B (en) | 2007-07-01 |
US20090077528A1 (en) | 2009-03-19 |
KR100664635B1 (ko) | 2007-01-04 |
JP4177722B2 (ja) | 2008-11-05 |
US8332784B2 (en) | 2012-12-11 |
US20120047475A1 (en) | 2012-02-23 |
US7458057B2 (en) | 2008-11-25 |
KR20050004034A (ko) | 2005-01-12 |
CN1577722A (zh) | 2005-02-09 |
CN101713920A (zh) | 2010-05-26 |
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Effective date of registration: 20170802 Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Toshiba Corp. |
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Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Japanese businessman Panjaya Co.,Ltd. Address after: Tokyo, Japan Patentee after: Kaixia Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |
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Effective date of registration: 20211013 Address after: Tokyo, Japan Patentee after: Japanese businessman Panjaya Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |