CN1536626A - 夹盘设备 - Google Patents

夹盘设备 Download PDF

Info

Publication number
CN1536626A
CN1536626A CNA200410033550XA CN200410033550A CN1536626A CN 1536626 A CN1536626 A CN 1536626A CN A200410033550X A CNA200410033550X A CN A200410033550XA CN 200410033550 A CN200410033550 A CN 200410033550A CN 1536626 A CN1536626 A CN 1536626A
Authority
CN
China
Prior art keywords
chuck
rear portion
outer cover
container
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA200410033550XA
Other languages
English (en)
Inventor
E���߶�ά��
弗拉蒂米尔·E·莱博维克
L
马丁·L·朱克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CollabRx Inc
Original Assignee
CollabRx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CollabRx Inc filed Critical CollabRx Inc
Publication of CN1536626A publication Critical patent/CN1536626A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

本发明涉及一等离子体体反应器设备(1)，其改善了蚀刻均匀性并提高了刻蚀的产量。通过采用新型的气体输送机构(9a)和绝热的晶片吸盘(42)实现了更好的蚀刻均匀性。真空绝热的吸盘(42)还使得能量消耗低、及产量高。

Description

夹盘设备
本案是申请日为1996年3月28日、申请号为96194041.7、发明名称为“等离子体蚀刻系统”的发明专利申请的分案申请。
技术领域
本发明涉及一种改进了的等离子体反应器，尤其涉及一种能提高蚀刻的均匀性和产量的反应器。
背景技术
等离子体蚀刻已成为制造集成电路里的半导体器件的重要的工艺过程。任何制造半导体器件的等离子体工艺过程的关键要求是所造出的器件在整个晶片上的电特性必须均匀和一致。换句话说，等离子体蚀刻过程必须能使器件在厚度、大小和横截面这些结构方面具有高的均匀性。但是，当晶片的直径增加，器件的尺寸减小时，要获得这样的均匀性的困难也就随之增加了。等离子体蚀刻反应器必须在提高均匀性和产量的同时，还要降低生产成本。
整个晶片的器件结构的均匀性取决这样一些因素，如，气体导入容器的方式和整个晶片的温度梯度。为了使整个晶片均匀蚀刻，腐蚀气体必须以均匀方式导入等离子体反应器中。传统的作法是用许多小的导入孔将腐蚀气体导入反应容器。这种做法，不仅导入小孔的机加工很困难，而且在晶片上还是产生了均匀性问题。由于导入孔是在固定位置将气体导入到反应容器中去的，在小孔附近的气体密度最高，因此，气体不是匀衡地导入的，整个晶片蚀刻的均匀性随着导孔的数量和尺寸发生明显的变化。除了气体输送系统，晶片上的温度梯度也会影响蚀刻的均匀性。一些像金属蚀刻的等离子体工艺过程要求在等离子体过程中加热晶片。为了保持整个晶片上温度的均匀性，等离子体蚀刻系统必须要降低热耗量或降低晶片处的热传导。一般来讲，在等离子体处理中，仅仅蚀刻反应器中的晶片夹盘的上表面处于真空，而夹盘的下表面是在大气压力下。晶片夹盘下表面在大气压下引起了在夹盘下部对流所产生的热损耗。在处理过程中，不仅由于对流的热损耗降低了整个晶片的均匀性，而且由于在蚀刻之前加热器需用较长的时间加热晶片也使产量降低了。因此，为了提高蚀刻的均匀性和生产量，必须开发一种装置来降低晶片夹盘下表面的热损耗。
发明内容
从广义上来讲，本发明提供了一种能增加蚀刻均匀性并提高产量的装置。
本发明公开了一种将腐蚀气体引入等离子体蚀刻系统的新的改进型的装置。这种装置不再是通过一组导入小孔将气体导入容器，而是通过一个连续的环形间隙将气体导入。这种间隙可使流进容器的气体变成一种均匀并连续的薄气层，这可消除任何对蚀刻均匀性不利的固定位置的压差。这种连续的环形间隙提供一种放射状的平缓的气流梯度，这使得在晶片周围的气体浓度均衡分布，从而可得到很高的均匀性。
本发明还公开了一种高温绝热夹盘，这种夹盘可进一步提高蚀刻均匀性和晶片的产量。本发明中用的晶片夹盘的后表面有真空绝缘，这种绝缘使温度有很好的一致性。因此，整个晶片具有很好的蚀刻均匀性。这种等离子体蚀刻装置在晶片夹盘后部提供真空绝热，而不是处于大气压下，这就使得整个晶片有好的温度和蚀刻的均匀性。众所周知，真空的高温绝热性特别好，因为，真空不利于热传导。用夹盘下面引入软真空(soft vacuum)的方法，可减少从夹盘下表面因对流造成的热耗散，相反热肯定沿着罩在夹盘下面的真空罩的薄壁传导。热传输的减少也就减少了在处理中需要保持夹盘温度的热能量，因此，也就节约能耗和减少将夹盘的温差保持在允许范围的时间。降低热传输也减少了在蚀刻之前加热晶片的时间，于是，晶片的产量可提高。
附图说明
图1是说明了按本发明的整体装置的一个实施例的横截面图。
图2是说明了按本发明的气体输送装置的一个实施例的横截面图。
图3是说明了按本发明的晶片夹盘组件的一个实施例的横截面图。
具体实施方式
用图1的横截面图来说明按本发明的整体装置的一个实施例。该装置包括一个反应容器1，这个容器是用顶部石英窗4、圆柱型容器侧壁40、和晶片夹盘的形成和底盘组件42。在顶部石英窗4的底下并沿其周长是气体输送系统41。气体导入口14提供进入容器的反应物。在反应物进入气体导入口14后，通过U形气体通道进入环形气体内腔2a。该内腔是图2所示的气体输送装置的一部分。在图2中，气体从环形气体内腔2a通过许多缝槽2b进入环形气体增压器9b。气体内腔2a和气体增加器9b主要是用来保持合适的压差。气体通过在顶部石英窗4和气体法兰9之间的连续环形空隙9a，从环形气体增压器9b流到容器1中去。结果，气体通过在气体法兰9和顶部石英窗4之间的连续开口被引入容器，因此，产生了一种连续的气“壁”。
图3说明了晶片夹盘组件42的详细情况。晶片夹盘和底盘组件42包括晶片夹盘6，加热件7和底盘8。加热件7是插在晶片夹盘6和底盘8之间的。容器48通过气体设备19用真空发生器21抽成真空。因此，容器48处在真空下，任何热传输都几乎是沿着晶片夹盘6的侧壁46通过热传导进行的。

Claims (5)

1.一种用于等离子体反应器的夹盘设备，所述等离子体反应器具有反应容器，所述夹盘设备包括：
具有前部和后部的夹盘，其中所述夹盘的前部适于支撑将被处理的晶片；
适于加热所述夹盘的装置；以及
适于在所述夹盘周围产生真空环境并适于从所述容器上分离开以便使所述夹盘绝热的装置，其中产生真空环境的装置包括与所述夹盘后部共存的后部容器，所述真空产生装置包括抽空所述后部容器的真空发生器。
2.一种用于等离子体反应器的夹盘设备，所述等离子体反应器具有反应容器，所述夹盘设备包括：
夹盘，具有适于支撑将被处理的晶片的前部，并具有后部；
加热所述夹盘的加热器；以及
与所述容器分离开的外罩，用于产生与所述夹盘相邻的真空环境以便使所述夹盘绝热，其中所述外罩与所述夹盘的后部共存；以及
真空发生器，与所述外罩相连，所述真空发生器用于将所述外罩抽空。
3.一种用于反应器的夹盘设备，包括：
夹盘，具有适于安置将被处理的晶片的前部，并具有后部；
外罩，位置上与所述夹盘相邻，构造所述外罩以保持与所述夹盘相邻的真空，使得所述夹盘绝热，所述外罩与所述夹盘的后部共存；以及
真空发生器，与所述外罩相连，所述真空发生器用于将所述外罩抽空。
4.一种用于反应器的夹盘设备，包括：
夹盘，具有适于安置将被处理的晶片的前部，并具有后部；
后部容器，位置上与所述夹盘的后部相邻，所述后部容器能够保持真空，使得所述夹盘绝热，所述后部容器与所述夹盘的后部共存；以及
真空发生器，与所述后部容器相连，所述真空发生器用于将所述后部容器抽空。
5.如权利要求4所述的夹盘设备，其中所述夹盘包括夹盘加热器。
CNA200410033550XA 1995-05-25 1996-03-28 夹盘设备 Pending CN1536626A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/450,369 1995-05-25
US08/450,369 US5985089A (en) 1995-05-25 1995-05-25 Plasma etch system

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB961940417A Division CN1154157C (zh) 1995-05-25 1996-03-28 等离子体蚀刻系统

Publications (1)

Publication Number Publication Date
CN1536626A true CN1536626A (zh) 2004-10-13

Family

ID=23787826

Family Applications (2)

Application Number Title Priority Date Filing Date
CNA200410033550XA Pending CN1536626A (zh) 1995-05-25 1996-03-28 夹盘设备
CNB961940417A Expired - Fee Related CN1154157C (zh) 1995-05-25 1996-03-28 等离子体蚀刻系统

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB961940417A Expired - Fee Related CN1154157C (zh) 1995-05-25 1996-03-28 等离子体蚀刻系统

Country Status (7)

Country Link
US (3) US5985089A (zh)
EP (1) EP0888635A4 (zh)
JP (2) JP2000509199A (zh)
KR (1) KR100453537B1 (zh)
CN (2) CN1536626A (zh)
CA (1) CA2220546A1 (zh)
WO (1) WO1996037910A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102124820B (zh) * 2008-08-19 2014-09-10 朗姆研究公司 用于静电卡盘的边缘环

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5985089A (en) * 1995-05-25 1999-11-16 Tegal Corporation Plasma etch system
US6461434B1 (en) * 1999-09-27 2002-10-08 Advanced Micro Devices, Inc. Quick-change flange
TW523557B (en) * 2000-02-21 2003-03-11 Nanya Technology Corp Exhausting method in a dry etching apparatus
EP1275129B1 (en) * 2000-02-22 2008-09-24 Energy Conversion Devices, Inc. E-beam/microwave gas jet pecvd method and apparatus for depositing and/or surface modification of thin film materials
US7270724B2 (en) 2000-12-13 2007-09-18 Uvtech Systems, Inc. Scanning plasma reactor
US6773683B2 (en) 2001-01-08 2004-08-10 Uvtech Systems, Inc. Photocatalytic reactor system for treating flue effluents
JP4540926B2 (ja) * 2002-07-05 2010-09-08 忠弘 大見 プラズマ処理装置
JP2004214336A (ja) * 2002-12-27 2004-07-29 Tokyo Electron Ltd プラズマエッチング方法およびプラズマエッチング装置
CN100389639C (zh) * 2005-08-19 2008-05-21 友达光电股份有限公司 干蚀刻装置
US8241425B2 (en) * 2009-01-23 2012-08-14 Axcelis Technologies, Inc. Non-condensing thermos chuck
US8492736B2 (en) * 2010-06-09 2013-07-23 Lam Research Corporation Ozone plenum as UV shutter or tunable UV filter for cleaning semiconductor substrates
CN103163438A (zh) * 2011-12-12 2013-06-19 中国科学技术大学 一种微放电器性能测试装置及方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE295196C (zh) *
US4743570A (en) * 1979-12-21 1988-05-10 Varian Associates, Inc. Method of thermal treatment of a wafer in an evacuated environment
US4909314A (en) * 1979-12-21 1990-03-20 Varian Associates, Inc. Apparatus for thermal treatment of a wafer in an evacuated environment
US4680061A (en) * 1979-12-21 1987-07-14 Varian Associates, Inc. Method of thermal treatment of a wafer in an evacuated environment
US4512391A (en) * 1982-01-29 1985-04-23 Varian Associates, Inc. Apparatus for thermal treatment of semiconductor wafers by gas conduction incorporating peripheral gas inlet
US4512283A (en) * 1982-02-01 1985-04-23 Texas Instruments Incorporated Plasma reactor sidewall shield
US4457359A (en) * 1982-05-25 1984-07-03 Varian Associates, Inc. Apparatus for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer
US4508161A (en) * 1982-05-25 1985-04-02 Varian Associates, Inc. Method for gas-assisted, solid-to-solid thermal transfer with a semiconductor wafer
US4542298A (en) * 1983-06-09 1985-09-17 Varian Associates, Inc. Methods and apparatus for gas-assisted thermal transfer with a semiconductor wafer
US4535834A (en) * 1984-05-02 1985-08-20 Varian Associates, Inc. Method and apparatus for controlling thermal transfer in a cyclic vacuum processing system
JPS6139520A (ja) * 1984-07-31 1986-02-25 Hitachi Ltd プラズマ処理装置
JPS61116841A (ja) * 1984-11-12 1986-06-04 Fujitsu Ltd ドライエツチング装置
US4612077A (en) * 1985-07-29 1986-09-16 The Perkin-Elmer Corporation Electrode for plasma etching system
US5158644A (en) * 1986-12-19 1992-10-27 Applied Materials, Inc. Reactor chamber self-cleaning process
CA1336180C (en) * 1987-03-27 1995-07-04 Kazuaki Ohmi Substrate-treating apparatus and method
US4790258A (en) * 1987-04-03 1988-12-13 Tegal Corporation Magnetically coupled wafer lift pins
US4780169A (en) * 1987-05-11 1988-10-25 Tegal Corporation Non-uniform gas inlet for dry etching apparatus
US4875989A (en) * 1988-12-05 1989-10-24 Texas Instruments Incorporated Wafer processing apparatus
US5127988A (en) * 1989-12-27 1992-07-07 Yoshida Kogyo K.K. Process for the surface treatment of conductive material
US5211796A (en) * 1990-01-08 1993-05-18 Lst Logic Corporation Apparatus for performing in-situ etch of CVD chamber
US5447570A (en) * 1990-04-23 1995-09-05 Genus, Inc. Purge gas in wafer coating area selection
DD295196A5 (de) * 1990-06-15 1991-10-24 Veb Elektroamt Dresden,De Anordnung zur homogenisierung der ortsabhaengigkeit der schichtbildung oder des schichtabtrages
US5192849A (en) * 1990-08-10 1993-03-09 Texas Instruments Incorporated Multipurpose low-thermal-mass chuck for semiconductor processing equipment
JPH0817171B2 (ja) * 1990-12-31 1996-02-21 株式会社半導体エネルギー研究所 プラズマ発生装置およびそれを用いたエッチング方法
US5344525A (en) * 1991-01-29 1994-09-06 Micron Technology, Inc. Process for etching semiconductor devices
JPH05206069A (ja) * 1992-01-29 1993-08-13 Fujitsu Ltd プラズマエッチング法及びプラズマエッチング装置
JP3079818B2 (ja) * 1992-12-25 2000-08-21 富士電機株式会社 プラズマ処理装置
US5800686A (en) * 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
US5372674A (en) * 1993-05-14 1994-12-13 Hughes Aircraft Company Electrode for use in a plasma assisted chemical etching process
US5466325A (en) * 1993-06-02 1995-11-14 Nitto Denko Corporation Resist removing method, and curable pressure-sensitive adhesive, adhesive sheets and apparatus used for the method
US5556476A (en) * 1994-02-23 1996-09-17 Applied Materials, Inc. Controlling edge deposition on semiconductor substrates
US5985089A (en) * 1995-05-25 1999-11-16 Tegal Corporation Plasma etch system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102124820B (zh) * 2008-08-19 2014-09-10 朗姆研究公司 用于静电卡盘的边缘环

Also Published As

Publication number Publication date
WO1996037910A1 (en) 1996-11-28
KR19990021890A (ko) 1999-03-25
EP0888635A4 (en) 2005-04-27
KR100453537B1 (ko) 2005-05-09
CA2220546A1 (en) 1996-11-28
JP2005277442A (ja) 2005-10-06
CN1239587A (zh) 1999-12-22
EP0888635A1 (en) 1999-01-07
JP2000509199A (ja) 2000-07-18
CN1154157C (zh) 2004-06-16
US6120610A (en) 2000-09-19
US5985089A (en) 1999-11-16
US5958139A (en) 1999-09-28

Similar Documents

Publication Publication Date Title
CN1154157C (zh) 等离子体蚀刻系统
US9373499B2 (en) Batch-type remote plasma processing apparatus
US5021114A (en) Apparatus for treating material by using plasma
US5011705A (en) Plasma processing method
EP1169490B1 (en) Vacuum processing apparatus
US5543688A (en) Plasma generation apparatus with interleaved electrodes and corresponding method
US8931433B2 (en) Plasma processing apparatus
JPS61189642A (ja) プラズマ反応装置
KR100502613B1 (ko) 기판냉각장치및반도체제조장치
JPS61127877A (ja) ドライエツチング装置
JPH0687440B2 (ja) マイクロ波プラズマ発生方法
JP3034692B2 (ja) 真空反応装置および半導体基板の処理方法
JPS60250631A (ja) プラズマエツチング装置
JPS6417869A (en) Microwave plasma chemical vapor deposition device
JPH0732076B2 (ja) マイクロ波プラズマ処理装置およびその処理方法
JP2504489B2 (ja) 化学気相成長法
JPH04305920A (ja) 縦型減圧ｃｖｄ装置
JPH07297176A (ja) プラズマ処理方法及びその装置
JPS6277465A (ja) アモルフアスシリコン成膜法
JP3099801B2 (ja) 成膜処理方法及び装置
JP2773157B2 (ja) 半導体製造装置
JPS63155609A (ja) 電子サイクロトロン共鳴プラズマ装置
JPS59161828A (ja) 反応装置
JPS6328886A (ja) ドライエツチング装置
JPH0689875A (ja) プラズマ反応装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication