CN1536626A - 夹盘设备 - Google Patents

夹盘设备 Download PDF

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Publication number
CN1536626A
CN1536626A CNA200410033550XA CN200410033550A CN1536626A CN 1536626 A CN1536626 A CN 1536626A CN A200410033550X A CNA200410033550X A CN A200410033550XA CN 200410033550 A CN200410033550 A CN 200410033550A CN 1536626 A CN1536626 A CN 1536626A
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chuck
rear portion
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vacuum
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E���߶�ά��
弗拉蒂米尔·E·莱博维克
L
马丁·L·朱克
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CollabRx Inc
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CollabRx Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

本发明涉及一等离子体体反应器设备(1)，其改善了蚀刻均匀性并提高了刻蚀的产量。通过采用新型的气体输送机构(9a)和绝热的晶片吸盘(42)实现了更好的蚀刻均匀性。真空绝热的吸盘(42)还使得能量消耗低、及产量高。

Description

夹盘设备
本案是申请日为1996年3月28日、申请号为96194041.7、发明名称为“等离子体蚀刻系统”的发明专利申请的分案申请。
技术领域
本发明涉及一种改进了的等离子体反应器，尤其涉及一种能提高蚀刻的均匀性和产量的反应器。
背景技术
等离子体蚀刻已成为制造集成电路里的半导体器件的重要的工艺过程。任何制造半导体器件的等离子体工艺过程的关键要求是所造出的器件在整个晶片上的电特性必须均匀和一致。换句话说，等离子体蚀刻过程必须能使器件在厚度、大小和横截面这些结构方面具有高的均匀性。但是，当晶片的直径增加，器件的尺寸减小时，要获得这样的均匀性的困难也就随之增加了。等离子体蚀刻反应器必须在提高均匀性和产量的同时，还要降低生产成本。
整个晶片的器件结构的均匀性取决这样一些因素，如，气体导入容器的方式和整个晶片的温度梯度。为了使整个晶片均匀蚀刻，腐蚀气体必须以均匀方式导入等离子体反应器中。传统的作法是用许多小的导入孔将腐蚀气体导入反应容器。这种做法，不仅导入小孔的机加工很困难，而且在晶片上还是产生了均匀性问题。由于导入孔是在固定位置将气体导入到反应容器中去的，在小孔附近的气体密度最高，因此，气体不是匀衡地导入的，整个晶片蚀刻的均匀性随着导孔的数量和尺寸发生明显的变化。除了气体输送系统，晶片上的温度梯度也会影响蚀刻的均匀性。一些像金属蚀刻的等离子体工艺过程要求在等离子体过程中加热晶片。为了保持整个晶片上温度的均匀性，等离子体蚀刻系统必须要降低热耗量或降低晶片处的热传导。一般来讲，在等离子体处理中，仅仅蚀刻反应器中的晶片夹盘的上表面处于真空，而夹盘的下表面是在大气压力下。晶片夹盘下表面在大气压下引起了在夹盘下部对流所产生的热损耗。在处理过程中，不仅由于对流的热损耗降低了整个晶片的均匀性，而且由于在蚀刻之前加热器需用较长的时间加热晶片也使产量降低了。因此，为了提高蚀刻的均匀性和生产量，必须开发一种装置来降低晶片夹盘下表面的热损耗。
发明内容
从广义上来讲，本发明提供了一种能增加蚀刻均匀性并提高产量的装置。
本发明公开了一种将腐蚀气体引入等离子体蚀刻系统的新的改进型的装置。这种装置不再是通过一组导入小孔将气体导入容器，而是通过一个连续的环形间隙将气体导入。这种间隙可使流进容器的气体变成一种均匀并连续的薄气层，这可消除任何对蚀刻均匀性不利的固定位置的压差。这种连续的环形间隙提供一种放射状的平缓的气流梯度，这使得在晶片周围的气体浓度均衡分布，从而可得到很高的均匀性。
本发明还公开了一种高温绝热夹盘，这种夹盘可进一步提高蚀刻均匀性和晶片的产量。本发明中用的晶片夹盘的后表面有真空绝缘，这种绝缘使温度有很好的一致性。因此，整个晶片具有很好的蚀刻均匀性。这种等离子体蚀刻装置在晶片夹盘后部提供真空绝热，而不是处于大气压下，这就使得整个晶片有好的温度和蚀刻的均匀性。众所周知，真空的高温绝热性特别好，因为，真空不利于热传导。用夹盘下面引入软真空(soft vacuum)的方法，可减少从夹盘下表面因对流造成的热耗散，相反热肯定沿着罩在夹盘下面的真空罩的薄壁传导。热传输的减少也就减少了在处理中需要保持夹盘温度的热能量，因此，也就节约能耗和减少将夹盘的温差保持在允许范围的时间。降低热传输也减少了在蚀刻之前加热晶片的时间，于是，晶片的产量可提高。
附图说明
图1是说明了按本发明的整体装置的一个实施例的横截面图。
图2是说明了按本发明的气体输送装置的一个实施例的横截面图。
图3是说明了按本发明的晶片夹盘组件的一个实施例的横截面图。
具体实施方式
用图1的横截面图来说明按本发明的整体装置的一个实施例。该装置包括一个反应容器1，这个容器是用顶部石英窗4、圆柱型容器侧壁40、和晶片夹盘的形成和底盘组件42。在顶部石英窗4的底下并沿其周长是气体输送系统41。气体导入口14提供进入容器的反应物。在反应物进入气体导入口14后，通过U形气体通道进入环形气体内腔2a。该内腔是图2所示的气体输送装置的一部分。在图2中，气体从环形气体内腔2a通过许多缝槽2b进入环形气体增压器9b。气体内腔2a和气体增加器9b主要是用来保持合适的压差。气体通过在顶部石英窗4和气体法兰9之间的连续环形空隙9a，从环形气体增压器9b流到容器1中去。结果，气体通过在气体法兰9和顶部石英窗4之间的连续开口被引入容器，因此，产生了一种连续的气“壁”。
图3说明了晶片夹盘组件42的详细情况。晶片夹盘和底盘组件42包括晶片夹盘6，加热件7和底盘8。加热件7是插在晶片夹盘6和底盘8之间的。容器48通过气体设备19用真空发生器21抽成真空。因此，容器48处在真空下，任何热传输都几乎是沿着晶片夹盘6的侧壁46通过热传导进行的。

Claims (5)

1.一种用于等离子体反应器的夹盘设备，所述等离子体反应器具有反应容器，所述夹盘设备包括：
具有前部和后部的夹盘，其中所述夹盘的前部适于支撑将被处理的晶片；
适于加热所述夹盘的装置；以及
适于在所述夹盘周围产生真空环境并适于从所述容器上分离开以便使所述夹盘绝热的装置，其中产生真空环境的装置包括与所述夹盘后部共存的后部容器，所述真空产生装置包括抽空所述后部容器的真空发生器。
2.一种用于等离子体反应器的夹盘设备，所述等离子体反应器具有反应容器，所述夹盘设备包括：
夹盘，具有适于支撑将被处理的晶片的前部，并具有后部；
加热所述夹盘的加热器；以及
与所述容器分离开的外罩，用于产生与所述夹盘相邻的真空环境以便使所述夹盘绝热，其中所述外罩与所述夹盘的后部共存；以及
真空发生器，与所述外罩相连，所述真空发生器用于将所述外罩抽空。
3.一种用于反应器的夹盘设备，包括：
夹盘，具有适于安置将被处理的晶片的前部，并具有后部；
外罩，位置上与所述夹盘相邻，构造所述外罩以保持与所述夹盘相邻的真空，使得所述夹盘绝热，所述外罩与所述夹盘的后部共存；以及
真空发生器，与所述外罩相连，所述真空发生器用于将所述外罩抽空。
4.一种用于反应器的夹盘设备，包括：
夹盘，具有适于安置将被处理的晶片的前部，并具有后部；
后部容器，位置上与所述夹盘的后部相邻，所述后部容器能够保持真空，使得所述夹盘绝热，所述后部容器与所述夹盘的后部共存；以及
真空发生器，与所述后部容器相连，所述真空发生器用于将所述后部容器抽空。
5.如权利要求4所述的夹盘设备，其中所述夹盘包括夹盘加热器。
CNA200410033550XA 1995-05-25 1996-03-28 夹盘设备 Pending CN1536626A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/450,369 1995-05-25
US08/450,369 US5985089A (en) 1995-05-25 1995-05-25 Plasma etch system

Related Parent Applications (1)

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CNB961940417A Division CN1154157C (zh) 1995-05-25 1996-03-28 等离子体蚀刻系统

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CN1536626A true CN1536626A (zh) 2004-10-13

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CNB961940417A Expired - Fee Related CN1154157C (zh) 1995-05-25 1996-03-28 等离子体蚀刻系统
CNA200410033550XA Pending CN1536626A (zh) 1995-05-25 1996-03-28 夹盘设备

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US (3) US5985089A (zh)
EP (1) EP0888635A4 (zh)
JP (2) JP2000509199A (zh)
KR (1) KR100453537B1 (zh)
CN (2) CN1154157C (zh)
CA (1) CA2220546A1 (zh)
WO (1) WO1996037910A1 (zh)

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KR100453537B1 (ko) 2005-05-09
CN1239587A (zh) 1999-12-22
WO1996037910A1 (en) 1996-11-28
JP2005277442A (ja) 2005-10-06
CN1154157C (zh) 2004-06-16
US6120610A (en) 2000-09-19
CA2220546A1 (en) 1996-11-28
EP0888635A1 (en) 1999-01-07
US5958139A (en) 1999-09-28
EP0888635A4 (en) 2005-04-27
KR19990021890A (ko) 1999-03-25
JP2000509199A (ja) 2000-07-18
US5985089A (en) 1999-11-16

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