DE3882404T2 - Gerät zur Bearbeitung von Substraten. - Google Patents

Gerät zur Bearbeitung von Substraten.

Info

Publication number
DE3882404T2
DE3882404T2 DE19883882404 DE3882404T DE3882404T2 DE 3882404 T2 DE3882404 T2 DE 3882404T2 DE 19883882404 DE19883882404 DE 19883882404 DE 3882404 T DE3882404 T DE 3882404T DE 3882404 T2 DE3882404 T2 DE 3882404T2
Authority
DE
Germany
Prior art keywords
processing substrates
substrates
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19883882404
Other languages
English (en)
Other versions
DE3882404D1 (de
Inventor
Kazuaki Ohmi
Tohru Den
Hisanori Tsuda
Masao Sugata
Kohjiro Yokono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP62071369A external-priority patent/JPS63239813A/ja
Priority claimed from JP62074776A external-priority patent/JPS63240014A/ja
Priority claimed from JP62074773A external-priority patent/JPS63241183A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3882404D1 publication Critical patent/DE3882404D1/de
Application granted granted Critical
Publication of DE3882404T2 publication Critical patent/DE3882404T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
DE19883882404 1987-03-27 1988-03-25 Gerät zur Bearbeitung von Substraten. Expired - Fee Related DE3882404T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62071369A JPS63239813A (ja) 1987-03-27 1987-03-27 反応装置
JP62074776A JPS63240014A (ja) 1987-03-27 1987-03-27 反応装置
JP62074773A JPS63241183A (ja) 1987-03-27 1987-03-27 対象物の処理方法

Publications (2)

Publication Number Publication Date
DE3882404D1 DE3882404D1 (de) 1993-08-26
DE3882404T2 true DE3882404T2 (de) 1993-12-23

Family

ID=27300623

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19883882404 Expired - Fee Related DE3882404T2 (de) 1987-03-27 1988-03-25 Gerät zur Bearbeitung von Substraten.

Country Status (3)

Country Link
EP (1) EP0284436B1 (de)
CA (1) CA1336180C (de)
DE (1) DE3882404T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3705666A1 (de) * 1987-02-21 1988-09-01 Leybold Ag Einrichtung zum herstellen eines plasmas und zur behandlung von substraten darin
KR880013424A (ko) * 1987-04-08 1988-11-30 미타 가츠시게 플라즈머 장치
US4970435A (en) * 1987-12-09 1990-11-13 Tel Sagami Limited Plasma processing apparatus
JPH0362517A (ja) * 1989-03-27 1991-03-18 Anelva Corp マイクロ波プラズマ処理装置
US5336355A (en) * 1991-12-13 1994-08-09 Hughes Aircraft Company Methods and apparatus for confinement of a plasma etch region for precision shaping of surfaces of substances and films
EP0554039B1 (de) * 1992-01-30 1996-11-20 Hitachi, Ltd. Verfahren und Vorrichtung zur Plasmaerzeugung und Verfahren zur Halbleiter-Bearbeitung
CH686254A5 (de) * 1992-07-27 1996-02-15 Balzers Hochvakuum Verfahren zur Einstellung der Bearbeitungsratenverteilung sowie Aetz- oder Plasma-CVD-Anlage zu dessen Ausfuehrung.
DE4310258A1 (de) * 1993-03-30 1994-10-06 Bosch Gmbh Robert Vorrichtung zur Herstellung einer Plasmapolymerschutzschicht auf Werkstücken, insbesondere Scheinwerferreflektoren
US5557172A (en) * 1993-12-21 1996-09-17 Sumitomo Heavy Industries, Ltd. Plasma beam generating method and apparatus which can generate a high-power plasma beam
US5677012A (en) * 1994-12-28 1997-10-14 Sumitomo Heavy Industries, Ltd. Plasma processing method and plasma processing apparatus
US5985089A (en) * 1995-05-25 1999-11-16 Tegal Corporation Plasma etch system
US6500314B1 (en) 1996-07-03 2002-12-31 Tegal Corporation Plasma etch reactor and method
US6048435A (en) 1996-07-03 2000-04-11 Tegal Corporation Plasma etch reactor and method for emerging films
US5866986A (en) * 1996-08-05 1999-02-02 Integrated Electronic Innovations, Inc. Microwave gas phase plasma source
US6660177B2 (en) 2001-11-07 2003-12-09 Rapt Industries Inc. Apparatus and method for reactive atom plasma processing for material deposition
DE10156615B4 (de) * 2001-11-17 2004-10-07 Forschungszentrum Karlsruhe Gmbh Einrichtung zur Erzeugung eines örtlich variierbaren Elektron-Zyklotron-Resonanz-Mikrowellen-Niederdruckplasmas

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1159012A (en) * 1980-05-02 1983-12-20 Seitaro Matsuo Plasma deposition apparatus
JPS58125820A (ja) * 1982-01-22 1983-07-27 Toshiba Corp 電子サイクロトロン共鳴型放電装置
DE3521318A1 (de) * 1985-06-14 1986-12-18 Leybold-Heraeus GmbH, 5000 Köln Verfahren und vorrichtung zum behandeln, insbesondere zum beschichten, von substraten mittels einer plasmaentladung
DE3705666A1 (de) * 1987-02-21 1988-09-01 Leybold Ag Einrichtung zum herstellen eines plasmas und zur behandlung von substraten darin

Also Published As

Publication number Publication date
DE3882404D1 (de) 1993-08-26
CA1336180C (en) 1995-07-04
EP0284436B1 (de) 1993-07-21
EP0284436A3 (en) 1989-09-06
EP0284436A2 (de) 1988-09-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee