CN1501462A - 半导体装置的制造方法 - Google Patents
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Abstract
本发明提供一种半导体装置的制造方法,其特征在于:包括:在形成多个集成电路的半导体基板上,通过绝缘树脂,粘合覆盖所述多个集成电路形成区域而形成叠层体的第一工序;至少保留所述支撑基体的一部分而将包含所述叠层体的半导体基板与所述绝缘树脂一起切削的第二工序;切削所述支撑基体而分割所述叠层体的第三工序,而且,一边冷却切削包含所述叠层体的半导体基板的刻模锯一边进行第二工序。
Description
技术领域
本发明涉及包含叠层多层软化温度不同的层而形成的叠层体的半导体装置的制造方法。特别是包含低软化温度的树脂层的半导体装置的制造方法。
背景技术
近年来为了实现半导体装置的芯片尺寸的小型化,芯片尺寸封装(CSP)被广泛应用。
近年来这样的芯片尺寸封装也进入CDD图像传感器领域,被采用到小型照相机的传感器芯片尺寸封装技术中。
图4是采用芯片尺寸封装的半导体装置的一例,图4(a)、(b)分别是从半导体装置的表面侧、背面侧投影的立体图。
通过绝缘树脂5在第一及第二支撑基体2、3之间封装半导体芯片4。在下部支撑基体3的主面,即在装置的背面侧,配置多个球状的端子8,这些多个球状端子8通过外部布线7连接半导体芯片4。在多条外部布线7中,从半导体芯片4引出布线而连接,与各球状端子8和半导体芯片4取得连通。
在图5中,表示图4的制造方法的流程。为了跨越在形成多个半导体元件的半导体基板10的表面邻接的各半导体元件的边界,通过氧化膜形成内部布线24。该内部布线24通过形成在氧化膜上的导通孔与半导体元件电连接(S10)。通过树脂膜5由上部基体2以及下部基体3夹住半导体基体10而形成叠层体100(S12)。此时,从下部支撑基体3侧沿着划线蚀刻半导体基板10,而一旦露出内部布线24后,就将下部支撑基体3贴合到半导体基板10上。在下部支撑基体3上形成缓冲部件30。该缓冲部件30发挥减轻施加在球状端子8上的应力的缓冲作用。
接着,如图6所示,将叠层体100沿着划线从下部支撑基体3侧采用刻模锯34形成倒V字形的沟槽(凹槽)22,将元件的内部布线24的端部26露出到沟槽22的侧面(S14)。
然后,在下部支撑基体3的表面以及沟槽22的内面形成金属膜28(S16),使金属膜28与内部布线24导通。为了将金属膜28沿着规定的配线模型从内部布线24开始到达缓冲部件30为止,进行图形化而形成外部布线7(S18)。进而,形成保护膜30以及球状端子20(S19、S20),沿着划线切断从而完成芯片尺寸封装的各半导体装置(S22)。
比如,由于在芯片尺寸封装的CCD图像传感器上具有受光面,至少在上部支撑基体2采用光学的透明的玻璃板的同时,在用于与半导体基板10接合的树脂层12上也采用具有透明性的环氧树脂。
【非专利文献1】
“PRODUCTS”、[online]、SHELLCASE公司、[2002年10月1日检索]、互联网<URL://www.shellcase.com/pages/products-shell0P-process.asp>
在为具有上述构成的半导体装置的情况下,对于半导体基板10的表面为了将金属膜堆积到具有规定的斜率的面上,与在下部支撑基体3的表面上蒸镀的情况相比,高密度地堆积金属膜是困难的。并且,由于用刻模锯切割叠层体100而形成凹槽22,树脂层12的树脂由摩擦发热而融化,融化的树脂附着在凹槽22的内面或刻模锯上。因此,在凹槽22的内面产生大的凹凸,在此无法顺利地蒸镀金属膜28,产生成膜后的金属膜28的密度进一步降低的问题。
这样,如果金属膜28的密度降低,则用于剥离在对金属模28构图时使用的抗蚀层的药液等就会侵入到金属膜28中,并且这些药液会残留在金属膜28中,从而产生对外部布线的腐蚀以及被剥离的严重问题。
而且,由切削而产生的异物附着在内部布线24的端面上,从而产生内部布线24与外部布线7的界面的导通恶化的问题。进而,当切削时的内部布线24上使用铝等的情况下,在内部布线24的端面上形成氢氧化物后,也会产生内部布线24与外部布线7的边界面的导通恶化的问题。
发明内容
本发明鉴于所述以往的技术问题,其目的是提供一种适合于在半导体基板上通过绝缘树脂固定支撑基体的叠层体构造的半导体装置的制造方法。
为解决所述问题,本发明的半导体装置的制造方法,包含:在形成多个集成电路的半导体基板上,通过绝缘树脂,粘合覆盖所述多个集成电路形成区域,形成叠层体的第一工序;至少保留所述支撑基体的一部分,将包含所述叠层体的半导体基板与所述绝缘树脂一起切削的第二工序;切削所述支撑基体,分割所述叠层体的第三工序,其特征在于:在所述第二工序中,一边冷却切削包含所述叠层体的半导体基板的刻模锯一边进行。
这里,在所述半导体装置的制造方法中,在所述第二工序中,最好通过向所述刻模锯喷射冷媒进行冷却。
作为更具体的实施形态,其特征在于:沿着所述刻模锯的旋转方向而喷射所述冷媒,并且以相对切削方向的5°以上45°以下的仰角,向刻模锯喷射所述冷媒。
而且,在所述的半导体装置的制造方法中,最好使所述冷媒的喷射宽度比刻模锯的宽度更宽而喷射所述冷媒。
并且,在所述半导体装置的制造方法中,最好在所述第二工序中使用的所述冷媒为通过RO膜的自来水。
而且,在所述半导体装置的制造方法中,最好还包含在通过所述第二工序形成的所述叠层体的切削面上形成金属布线的工序。
附图说明
图1是表示本发明的实施例的半导体装置的制造方法的图。
图2是表示本实施例的刻模锯的切削处理的图。
图3是说明本发明的实施例的切削处理的作用的图。
图4是表示芯片尺寸封装的半导体装置的外观的图。
图5是表示芯片尺寸封装的半导体装置的制造方法的流程图。
图6是表示以往的半导体装置的制造方法刻模锯的切削处理的图。
图中:2-上部支撑基体,3-下部支撑基体,4-半导体芯片,5-树脂层,7-外部布线,8-球状端子(焊锡球),10-半导体基板,22-凹槽(切槽),24-内部布线,26-内部布线的端部,28-金属膜,30-导通部,32-绝缘膜,34-刻模锯,36-冷媒,38-第一冷媒喷射装置,39-第二冷媒喷射装置,40-切削部分,41-洗净液体喷射装置,42-洗净液体,100-叠层体
具体实施方式
本发明的实施例的半导体装置的制造方法,如图1的流程图所示,基本由内部布线工序(S10)、叠层体形成工序(S12)、凹槽切削工序(S14-2)、金属膜形成工序(S16)、图案形成工序(S18)、端子形成工序(S20)以及刻模工序(S22)构成。
在本实施例的半导体装置的制造方法中,凹槽切削工序S14-2以外的各工序由于与以往的半导体装置的制造工序一样,因此省略说明。
这里,对叠层体100的构成进行说明。在以下的说明中,半导体基板10可以是硅基板、砷化钾等一般的半导体材料。在半导体基板10上可以形成包含晶体管元件、光电转换元件、电耦元件(CCD)等的半导体元件、电阻元件、电容元件的集成电路。
而且,树脂层5是粘接半导体基板10、上部支撑基体2以及下部支撑基体3的树脂,可以采用环氧树脂等的硬化树脂材料。当构成固体摄像元件时,适于使用透明的树脂层5。
而且,上部支撑基体2以及下部支撑基体3是提高元件构造强度的部件,可以使用玻璃、金属、塑料等。当构成固体摄像元件时,至少应该在上部支撑基体2上采用透明的玻璃或塑料。
以下,对作为本实施例特征的改良的凹槽切削工序进行详细说明。
在步骤S14-2的凹槽切削工序中,采用带有锥形的刻模锯从下部支撑基体3侧对叠层体进行切削,形成倒V字形的凹槽22。由刻模锯对下部支撑基体3、树脂5、半导体基板10以及上部支撑基体2的一部分进行切削后,在凹槽22的内面露出内部布线24的端部。
凹槽切削工序是采用在圆盘状板的圆周上粘贴钻石微粒的刻模锯34而进行的。此时,通过对刻模锯的冷却,叠层体100的切削面的温度,以比具有包含于叠层体100的层中最低的软化温度的层的软化温度更低的温度的条件进行切削。
具体地讲,如图2所示,采用设置了第一以及第二冷媒喷射装置38、39的冷却装置,向刻模锯34喷射冷媒36而一边冷却一边切削。
第一冷媒喷射装置38位于刻模锯34的前方,如图2(a)所示,通过从第一冷媒喷射装置38向刻模锯34以及切削部分40直接喷射冷媒36而进行冷却。这样,由于是直接喷射冷媒36而进行的冷却,因此可以局部地冷却刻模锯34以及切削部分40,提高冷却效率,有效地抑制温度的上升。另外,作为冷媒36可以适当地选择采用纯净水、丙酮、乙醇、异丙醇等,但是在本实施例中,采用RO过滤器(采用逆浸透膜:ReverseOsmosis(RO)膜的过滤器系统),使用净化自来水的RO水(比如pH值:7)±1左右)。自来水虽然也有很好的冷却效果,但是由于自来水中包含的氯可能会在内部布线的端部26产生腐蚀作用,因此使用所述的RO水或纯净水等的干净的水为好,从成本上考虑以采用RO水是合适的。
但是,由于纯净水的电阻率较高,在一边向切削部位喷射一边切削时,会产生静电,容易在切削面上吸附异物。而且,由于产生包含在纯净水或RO水中的微量的氨、胺等的氢氧化离子,在切削的内部布线24的端部表面生成氢氧化物。比如,当作为内部布线24使用铝线时,在内部布线24的端面上形成氢氧化铝的表面层。该氢氧化物可能导致内部布线24的端部与后来形成的外部布线7的物理粘接强度以及电接触水平降低。
因此,在本实施例中,作为冷媒36使用弱酸性的冷媒更合适。弱酸性冷媒36的pH最好在4以上6以下,比如,在纯净水或RO水中加入二氧化碳(CO2)泡沫而生成的碳酸水就相当于此。
通过使用pH为6以下的冷媒36,可以降低冷媒36的电阻率,抑制在切削时发生的静电。而且,内部布线24的端部表面被蚀刻,与此同时附着在内部布线24的端面上的异物也被除去。进而,包含在纯净水或RO水中的氨、胺等的氢氧化离子的发生源的物质被中和,内部布线24的端面上的氢氧化物的生成可以得到抑制。
另一方面如果pH不满4,在切削时的内部布线24的端部的蚀刻会进行的过快。比如,内部布线24使用铝的情况下,与使用pH=6的冷媒36进行冷却时比较,使用pH=4的冷媒36进行冷却的情况蚀刻速度要高100倍。其结果,如果使用pH不到4的冷媒36,则在内部布线24的端部发生过蚀刻,成为以后与外部布线7的接触性能降低的原因。
所以,考虑到蚀刻速度的问题,使用pH在5以上6以下的冷媒36进行冷却则更好。比如,将二氧化碳(CO2)泡沫注入纯净水或RO水中的情况下,由于可以维持pH在5以上6以下,将这样生成的碳酸水作为冷媒36使用最好。
另外,作为冷媒36的喷射方向,沿着刻模锯34的旋转方向进行是合适的。由此,喷到切削部分40的冷媒36沿着刻模锯34的旋转方向从切削部分40向凹槽22侧流入,切削部分40得到更有效的冷却,并且可以将附着在切削部分上的杂物除去。
而且,此时,理想的是相对切削方向具有5°以上45°以下的仰角,正好可以将冷媒36喷向切削点40。最好是相对切削方向具有30°以上40°以下的仰角,这样就更加适合于喷射冷媒36。
而且,作为冷媒36的喷射宽度,为了完全覆盖刻模锯34的刀口,喷出的宽度应该比刀口的宽度宽。这样,如图3(a)所示,在刻模锯34的刀口的两面均等地供给冷媒36,可以在切削时对刻模锯34进行更有效地冷却。
另一方面,如果不具备所述条件,如图3(b)所示,沿着刀口的冷媒36的流动就会不均等,向凹槽22的内面供给的冷媒36就会不充分而使冷却效果降低。
为了夹住刻模锯34,第二冷媒喷射装置39位于在刻模锯34的两侧,如图(b)所示,从第二冷媒喷射装置39也可以直接向刻模锯34以及切削部分40喷射冷媒36,这样可以进一步提高冷却效率。另外,就从该第二冷媒喷射装置39的冷媒36的喷射,相对叠层体100最好具有5°以上45°以下的仰角。
冷媒洗净喷射装置41位于刻模锯34的后方,从该冷媒洗净喷射装置41向切削后的叠层体100喷射冷媒洗净液42,这样可以除去凹槽22和叠层体100表面附着的杂物。作为冷媒洗净液可以继续使用冷媒36。
在这样的构成中,比如,叠层体100通过环氧树脂层以玻璃基体夹住的结构对硅半导体层进行冷却的结果,当采用直径20cm以及刀口宽0.62的刻模锯34,在40000转/分的情况下,通过以30°以上40°以下的仰角向切削部分40喷射201/分的纯净水,可以使切削部分40的温度保持在软化温度最低的环氧树脂层的软化温度150°以下进行切削。
如上所述,采用本实施例的半导体装置的制造方法,可以控制切削时的凹槽22的内面的温度的上升,可以防止凹槽22的内面的不需要物质的附着。其结果在它上面形成的金属膜的密度提高,可以防止外部布线的腐蚀或剥落。
根据本发明,在具有通过绝缘树脂在半导体基板上固定支撑基体的叠层体结构的半导体装置中,可以防止由于切削工序引起的布线的腐蚀以及剥离。所以,可以提高半导体装置的可靠性。
在包含低软化温度的树脂层的半导体装置中,其效果尤为显著。
Claims (7)
1.一种半导体装置的制造方法,其特征在于:包含:
在形成多个集成电路的半导体基板上,通过绝缘树脂,粘合覆盖所述多个集成电路的形成区域的支撑基体,形成叠层体的第一工序;
至少保留所述支撑基体的一部分,将包含所述叠层体的半导体基板与所述绝缘树脂一起切削的第二工序;
切削所述支撑基体,分割所述叠层体的第三工序,
所述第二工序,一边冷却切削包含所述叠层体的半导体基板的刻模锯一边进行。
2.如权利要求1所述的半导体装置的制造方法,其特征在于:在所述第二工序中,通过所述刻模锯喷射冷媒而进行冷却。
3.如权利要求2所述的半导体装置的制造方法,其特征在于:在所述第二工序中,沿着所述刻模锯的旋转方向喷射所述冷媒,并且以相对切削方向的5°以上45°以下的仰角,向刻模锯喷射所述冷媒。
4.如权利要求2所述的半导体装置的制造方法,其特征在于:在所述第二工序中,使所述冷媒的喷射宽度比刻模锯的宽度宽,喷射所述冷媒。
5.如权利要求2所述的半导体装置的制造方法,其特征在于:在所述第二工序中使用的所述冷媒是通过RO膜的自来水。
6.如权利要求2所述的半导体装置的制造方法,其特征在于:在所述第二工序中,一边喷射pH为4以上6以下的冷媒对所述刻模锯进行冷却一边进行。
7.如权利要求1所述的半导体装置的制造方法,其特征在于:还包含:在通过所述第二工序形成的所述叠层体的切削面上,形成金属布线的工序。
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CN101515096B (zh) * | 2008-02-22 | 2011-02-09 | 中华映管股份有限公司 | 基板的制造方法 |
CN112334912A (zh) * | 2018-06-20 | 2021-02-05 | 卡诺爱股份有限公司 | 金属卡制造方法 |
CN112352246A (zh) * | 2018-06-20 | 2021-02-09 | 卡诺爱股份有限公司 | 金属卡制造方法 |
CN112352246B (zh) * | 2018-06-20 | 2024-08-02 | 卡诺爱股份有限公司 | 金属卡制造方法 |
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JP2004165312A (ja) * | 2002-11-12 | 2004-06-10 | Sanyo Electric Co Ltd | 半導体集積装置及びその製造方法 |
JP4401066B2 (ja) | 2002-11-19 | 2010-01-20 | 三洋電機株式会社 | 半導体集積装置及びその製造方法 |
KR100556351B1 (ko) * | 2004-07-27 | 2006-03-03 | 동부아남반도체 주식회사 | 반도체 소자의 금속 패드 및 금속 패드 본딩 방법 |
JP4322181B2 (ja) * | 2004-07-29 | 2009-08-26 | 三洋電機株式会社 | 半導体装置の製造方法 |
US7582966B2 (en) | 2006-09-06 | 2009-09-01 | Megica Corporation | Semiconductor chip and method for fabricating the same |
KR100769722B1 (ko) * | 2006-10-10 | 2007-10-24 | 삼성전기주식회사 | 이미지센서의 웨이퍼 레벨 칩 스케일 패키지 및 그제조방법 |
US20080132036A1 (en) * | 2006-12-04 | 2008-06-05 | Chiu Chung Yang | Method for subdividing wafer into LEDs |
US8497161B2 (en) * | 2006-12-04 | 2013-07-30 | Chiu Chung Yang | Method for providing an LED chip with a peripheral protective film before cutting the same from a wafer |
US8580657B2 (en) * | 2008-09-23 | 2013-11-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Protecting sidewalls of semiconductor chips using insulation films |
US20140034103A1 (en) * | 2012-07-31 | 2014-02-06 | Stamp Teg Llc | System, methods, and devices for generating power using a thermoelectric device with closed loop cooling system for mobile device and battery charging |
JP5897454B2 (ja) | 2012-12-03 | 2016-03-30 | Towa株式会社 | 電子部品製造用の切断装置及び切断方法 |
TWI618131B (zh) * | 2013-08-30 | 2018-03-11 | 半導體能源研究所股份有限公司 | 剝離起點形成裝置及形成方法、疊層體製造裝置 |
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JP2809115B2 (ja) * | 1993-10-13 | 1998-10-08 | ヤマハ株式会社 | 半導体装置とその製造方法 |
US5461008A (en) * | 1994-05-26 | 1995-10-24 | Delco Electronics Corporatinon | Method of preventing aluminum bond pad corrosion during dicing of integrated circuit wafers |
US6152803A (en) * | 1995-10-20 | 2000-11-28 | Boucher; John N. | Substrate dicing method |
JP3296781B2 (ja) * | 1998-04-21 | 2002-07-02 | 信越半導体株式会社 | 水性切削液、その製造方法、ならびにこの水性切削液を用いた切削方法 |
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- 2003-03-27 JP JP2003088068A patent/JP2004214588A/ja not_active Withdrawn
- 2003-11-07 CN CNB2003101148402A patent/CN1260794C/zh not_active Expired - Fee Related
- 2003-11-12 TW TW092131623A patent/TWI228268B/zh not_active IP Right Cessation
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CN101515096B (zh) * | 2008-02-22 | 2011-02-09 | 中华映管股份有限公司 | 基板的制造方法 |
CN112334912A (zh) * | 2018-06-20 | 2021-02-05 | 卡诺爱股份有限公司 | 金属卡制造方法 |
CN112352246A (zh) * | 2018-06-20 | 2021-02-09 | 卡诺爱股份有限公司 | 金属卡制造方法 |
US11993065B2 (en) | 2018-06-20 | 2024-05-28 | Kona I Co., Ltd. | Metal card manufacturing method |
CN112334912B (zh) * | 2018-06-20 | 2024-07-19 | 卡诺爱股份有限公司 | 金属卡制造方法 |
CN112352246B (zh) * | 2018-06-20 | 2024-08-02 | 卡诺爱股份有限公司 | 金属卡制造方法 |
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US20040121562A1 (en) | 2004-06-24 |
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