CN1499532B - 非易失性存储器系统内纠错码的混合实现 - Google Patents
非易失性存储器系统内纠错码的混合实现 Download PDFInfo
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- CN1499532B CN1499532B CN2003101046432A CN200310104643A CN1499532B CN 1499532 B CN1499532 B CN 1499532B CN 2003101046432 A CN2003101046432 A CN 2003101046432A CN 200310104643 A CN200310104643 A CN 200310104643A CN 1499532 B CN1499532 B CN 1499532B
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- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Quality & Reliability (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
- Debugging And Monitoring (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Detection And Correction Of Errors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US42191102P | 2002-10-28 | 2002-10-28 | |
| US60/421,911 | 2002-10-28 | ||
| US60/421911 | 2002-10-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1499532A CN1499532A (zh) | 2004-05-26 |
| CN1499532B true CN1499532B (zh) | 2011-05-18 |
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ID=32825088
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2003101046432A Expired - Fee Related CN1499532B (zh) | 2002-10-28 | 2003-10-28 | 非易失性存储器系统内纠错码的混合实现 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8412879B2 (https=) |
| EP (1) | EP1424631B1 (https=) |
| JP (1) | JP4429685B2 (https=) |
| KR (1) | KR101017443B1 (https=) |
| CN (1) | CN1499532B (https=) |
| AT (1) | ATE320041T1 (https=) |
| DE (1) | DE60303895T2 (https=) |
Families Citing this family (143)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040083334A1 (en) * | 2002-10-28 | 2004-04-29 | Sandisk Corporation | Method and apparatus for managing the integrity of data in non-volatile memory system |
| US7559004B1 (en) | 2003-10-01 | 2009-07-07 | Sandisk Corporation | Dynamic redundant area configuration in a non-volatile memory system |
| EP1758027B1 (en) * | 2003-12-30 | 2010-07-14 | SanDisk Corporation | Non-volatile memory and method with control data management |
| US7139864B2 (en) | 2003-12-30 | 2006-11-21 | Sandisk Corporation | Non-volatile memory and method with block management system |
| US7383375B2 (en) | 2003-12-30 | 2008-06-03 | Sandisk Corporation | Data run programming |
| US7433993B2 (en) | 2003-12-30 | 2008-10-07 | San Disk Corportion | Adaptive metablocks |
| JP4182928B2 (ja) * | 2004-07-07 | 2008-11-19 | セイコーエプソン株式会社 | 情報処理装置、メモリ管理プログラムおよびメモリ管理方法 |
| JP2008508632A (ja) * | 2004-08-02 | 2008-03-21 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | データ記憶及び再生装置 |
| US8341371B2 (en) * | 2005-01-31 | 2012-12-25 | Sandisk Il Ltd | Method of managing copy operations in flash memories |
| GB2428496A (en) * | 2005-07-15 | 2007-01-31 | Global Silicon Ltd | Error correction for flash memory |
| US7509471B2 (en) | 2005-10-27 | 2009-03-24 | Sandisk Corporation | Methods for adaptively handling data writes in non-volatile memories |
| US7631162B2 (en) | 2005-10-27 | 2009-12-08 | Sandisck Corporation | Non-volatile memory with adaptive handling of data writes |
| CN101405811B (zh) * | 2006-01-20 | 2012-01-04 | 马维尔国际贸易有限公司 | 具有编码和信号处理的闪存 |
| WO2007132452A2 (en) * | 2006-05-12 | 2007-11-22 | Anobit Technologies | Reducing programming error in memory devices |
| KR101202537B1 (ko) * | 2006-05-12 | 2012-11-19 | 애플 인크. | 메모리 디바이스를 위한 결합된 왜곡 추정 및 에러 보정 코딩 |
| WO2007132456A2 (en) * | 2006-05-12 | 2007-11-22 | Anobit Technologies Ltd. | Memory device with adaptive capacity |
| KR101375955B1 (ko) | 2006-05-12 | 2014-03-18 | 애플 인크. | 메모리 디바이스 내의 왜곡 추정 및 상쇄 |
| JP2007305267A (ja) * | 2006-05-15 | 2007-11-22 | Toshiba Corp | 半導体記憶装置 |
| US7971071B2 (en) * | 2006-05-24 | 2011-06-28 | Walkoe Wilbur J | Integrated delivery and protection device for digital objects |
| JP4842719B2 (ja) * | 2006-06-28 | 2011-12-21 | 株式会社日立製作所 | ストレージシステム及びそのデータ保護方法 |
| US7533328B2 (en) * | 2006-07-04 | 2009-05-12 | Sandisk Il, Ltd. | Method of error correction in a multi-bit-per-cell flash memory |
| US8060806B2 (en) | 2006-08-27 | 2011-11-15 | Anobit Technologies Ltd. | Estimation of non-linear distortion in memory devices |
| US7975192B2 (en) | 2006-10-30 | 2011-07-05 | Anobit Technologies Ltd. | Reading memory cells using multiple thresholds |
| US7821826B2 (en) | 2006-10-30 | 2010-10-26 | Anobit Technologies, Ltd. | Memory cell readout using successive approximation |
| US7440319B2 (en) * | 2006-11-27 | 2008-10-21 | Sandisk Corporation | Apparatus with segmented bitscan for verification of programming |
| US7545681B2 (en) * | 2006-11-27 | 2009-06-09 | Sandisk Corporation | Segmented bitscan for verification of programming |
| US7924648B2 (en) | 2006-11-28 | 2011-04-12 | Anobit Technologies Ltd. | Memory power and performance management |
| US8151163B2 (en) * | 2006-12-03 | 2012-04-03 | Anobit Technologies Ltd. | Automatic defect management in memory devices |
| US20080140918A1 (en) * | 2006-12-11 | 2008-06-12 | Pantas Sutardja | Hybrid non-volatile solid state memory system |
| US9153337B2 (en) | 2006-12-11 | 2015-10-06 | Marvell World Trade Ltd. | Fatigue management system and method for hybrid nonvolatile solid state memory system |
| US7900102B2 (en) * | 2006-12-17 | 2011-03-01 | Anobit Technologies Ltd. | High-speed programming of memory devices |
| US7593263B2 (en) * | 2006-12-17 | 2009-09-22 | Anobit Technologies Ltd. | Memory device with reduced reading latency |
| KR100842680B1 (ko) | 2007-01-08 | 2008-07-01 | 삼성전자주식회사 | 플래시 메모리 장치의 오류 정정 컨트롤러 및 그것을포함하는 메모리 시스템 |
| US8151166B2 (en) | 2007-01-24 | 2012-04-03 | Anobit Technologies Ltd. | Reduction of back pattern dependency effects in memory devices |
| US7751240B2 (en) | 2007-01-24 | 2010-07-06 | Anobit Technologies Ltd. | Memory device with negative thresholds |
| JP4925301B2 (ja) * | 2007-02-07 | 2012-04-25 | 株式会社メガチップス | 半導体メモリシステム |
| WO2008111058A2 (en) * | 2007-03-12 | 2008-09-18 | Anobit Technologies Ltd. | Adaptive estimation of memory cell read thresholds |
| US8001320B2 (en) * | 2007-04-22 | 2011-08-16 | Anobit Technologies Ltd. | Command interface for memory devices |
| US8234545B2 (en) * | 2007-05-12 | 2012-07-31 | Apple Inc. | Data storage with incremental redundancy |
| WO2008139441A2 (en) | 2007-05-12 | 2008-11-20 | Anobit Technologies Ltd. | Memory device with internal signal processing unit |
| US8874831B2 (en) | 2007-06-01 | 2014-10-28 | Netlist, Inc. | Flash-DRAM hybrid memory module |
| US8301833B1 (en) | 2007-06-01 | 2012-10-30 | Netlist, Inc. | Non-volatile memory module |
| US8904098B2 (en) | 2007-06-01 | 2014-12-02 | Netlist, Inc. | Redundant backup using non-volatile memory |
| US7747903B2 (en) * | 2007-07-09 | 2010-06-29 | Micron Technology, Inc. | Error correction for memory |
| US7925936B1 (en) | 2007-07-13 | 2011-04-12 | Anobit Technologies Ltd. | Memory device with non-uniform programming levels |
| US8259497B2 (en) | 2007-08-06 | 2012-09-04 | Apple Inc. | Programming schemes for multi-level analog memory cells |
| KR101397549B1 (ko) * | 2007-08-16 | 2014-05-26 | 삼성전자주식회사 | 고속 프로그램이 가능한 불휘발성 반도체 메모리 시스템 및그것의 독출 방법 |
| KR101413736B1 (ko) | 2007-09-13 | 2014-07-02 | 삼성전자주식회사 | 향상된 신뢰성을 갖는 메모리 시스템 및 그것의웨어-레벨링 기법 |
| US8174905B2 (en) * | 2007-09-19 | 2012-05-08 | Anobit Technologies Ltd. | Programming orders for reducing distortion in arrays of multi-level analog memory cells |
| US7773413B2 (en) | 2007-10-08 | 2010-08-10 | Anobit Technologies Ltd. | Reliable data storage in analog memory cells in the presence of temperature variations |
| US8527819B2 (en) | 2007-10-19 | 2013-09-03 | Apple Inc. | Data storage in analog memory cell arrays having erase failures |
| US8068360B2 (en) * | 2007-10-19 | 2011-11-29 | Anobit Technologies Ltd. | Reading analog memory cells using built-in multi-threshold commands |
| US8000141B1 (en) | 2007-10-19 | 2011-08-16 | Anobit Technologies Ltd. | Compensation for voltage drifts in analog memory cells |
| US20090125790A1 (en) * | 2007-11-13 | 2009-05-14 | Mcm Portfolio Llc | Method and Apparatus of Automatically Selecting Error Correction Algorithms by a NAND Flash Controller |
| KR101509836B1 (ko) * | 2007-11-13 | 2015-04-06 | 애플 인크. | 멀티 유닛 메모리 디바이스에서의 메모리 유닛의 최적화된 선택 |
| US8225181B2 (en) | 2007-11-30 | 2012-07-17 | Apple Inc. | Efficient re-read operations from memory devices |
| US8209588B2 (en) * | 2007-12-12 | 2012-06-26 | Anobit Technologies Ltd. | Efficient interference cancellation in analog memory cell arrays |
| US8456905B2 (en) | 2007-12-16 | 2013-06-04 | Apple Inc. | Efficient data storage in multi-plane memory devices |
| US8085586B2 (en) * | 2007-12-27 | 2011-12-27 | Anobit Technologies Ltd. | Wear level estimation in analog memory cells |
| US8156398B2 (en) * | 2008-02-05 | 2012-04-10 | Anobit Technologies Ltd. | Parameter estimation based on error correction code parity check equations |
| US7924587B2 (en) * | 2008-02-21 | 2011-04-12 | Anobit Technologies Ltd. | Programming of analog memory cells using a single programming pulse per state transition |
| US7864573B2 (en) | 2008-02-24 | 2011-01-04 | Anobit Technologies Ltd. | Programming analog memory cells for reduced variance after retention |
| US8230300B2 (en) * | 2008-03-07 | 2012-07-24 | Apple Inc. | Efficient readout from analog memory cells using data compression |
| US8400858B2 (en) | 2008-03-18 | 2013-03-19 | Apple Inc. | Memory device with reduced sense time readout |
| US8059457B2 (en) * | 2008-03-18 | 2011-11-15 | Anobit Technologies Ltd. | Memory device with multiple-accuracy read commands |
| JP2008217811A (ja) * | 2008-04-03 | 2008-09-18 | Hitachi Ltd | 不揮発メモリを使用したディスク制御装置 |
| US20090287969A1 (en) * | 2008-05-13 | 2009-11-19 | Bpm Microsystems | Electronic apparatus and bit error rate tolerance method for programming non-volatile memory devices |
| EP2294510B1 (en) * | 2008-06-24 | 2011-12-28 | SanDisk IL Ltd. | Method and apparatus for error correction according to erase counts of a solid-state memory |
| US7924613B1 (en) | 2008-08-05 | 2011-04-12 | Anobit Technologies Ltd. | Data storage in analog memory cells with protection against programming interruption |
| US8498151B1 (en) | 2008-08-05 | 2013-07-30 | Apple Inc. | Data storage in analog memory cells using modified pass voltages |
| US8213229B2 (en) * | 2008-08-22 | 2012-07-03 | HGST Netherlands, B.V. | Error control in a flash memory device |
| US8949684B1 (en) | 2008-09-02 | 2015-02-03 | Apple Inc. | Segmented data storage |
| US8169825B1 (en) | 2008-09-02 | 2012-05-01 | Anobit Technologies Ltd. | Reliable data storage in analog memory cells subjected to long retention periods |
| US8482978B1 (en) | 2008-09-14 | 2013-07-09 | Apple Inc. | Estimation of memory cell read thresholds by sampling inside programming level distribution intervals |
| US8000135B1 (en) | 2008-09-14 | 2011-08-16 | Anobit Technologies Ltd. | Estimation of memory cell read thresholds by sampling inside programming level distribution intervals |
| US8239734B1 (en) | 2008-10-15 | 2012-08-07 | Apple Inc. | Efficient data storage in storage device arrays |
| US8713330B1 (en) | 2008-10-30 | 2014-04-29 | Apple Inc. | Data scrambling in memory devices |
| US8208304B2 (en) | 2008-11-16 | 2012-06-26 | Anobit Technologies Ltd. | Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N |
| US8248831B2 (en) * | 2008-12-31 | 2012-08-21 | Apple Inc. | Rejuvenation of analog memory cells |
| US8174857B1 (en) | 2008-12-31 | 2012-05-08 | Anobit Technologies Ltd. | Efficient readout schemes for analog memory cell devices using multiple read threshold sets |
| US8924661B1 (en) | 2009-01-18 | 2014-12-30 | Apple Inc. | Memory system including a controller and processors associated with memory devices |
| US8228701B2 (en) | 2009-03-01 | 2012-07-24 | Apple Inc. | Selective activation of programming schemes in analog memory cell arrays |
| US8259506B1 (en) | 2009-03-25 | 2012-09-04 | Apple Inc. | Database of memory read thresholds |
| US8832354B2 (en) * | 2009-03-25 | 2014-09-09 | Apple Inc. | Use of host system resources by memory controller |
| US8238157B1 (en) | 2009-04-12 | 2012-08-07 | Apple Inc. | Selective re-programming of analog memory cells |
| US20130047056A1 (en) * | 2009-05-05 | 2013-02-21 | Lite-On It Corporation | Flash memory device with rectifiable redundancy and method of controlling the same |
| CN101794623B (zh) * | 2009-06-01 | 2013-11-06 | 深圳市朗科科技股份有限公司 | 存储设备的纠错装置及方法 |
| US8479080B1 (en) | 2009-07-12 | 2013-07-02 | Apple Inc. | Adaptive over-provisioning in memory systems |
| US8495465B1 (en) | 2009-10-15 | 2013-07-23 | Apple Inc. | Error correction coding over multiple memory pages |
| US8566689B2 (en) * | 2009-10-22 | 2013-10-22 | Microsoft Corporation | Data integrity units in nonvolatile memory |
| US8301987B2 (en) * | 2009-10-29 | 2012-10-30 | Sandisk Il Ltd. | System and method of decoding data with reduced power consumption |
| US8677054B1 (en) | 2009-12-16 | 2014-03-18 | Apple Inc. | Memory management schemes for non-volatile memory devices |
| TWI497293B (zh) * | 2009-12-17 | 2015-08-21 | Ibm | 固態儲存裝置內之資料管理 |
| US8694814B1 (en) | 2010-01-10 | 2014-04-08 | Apple Inc. | Reuse of host hibernation storage space by memory controller |
| US8677203B1 (en) | 2010-01-11 | 2014-03-18 | Apple Inc. | Redundant data storage schemes for multi-die memory systems |
| JP5467270B2 (ja) | 2010-04-28 | 2014-04-09 | 国立大学法人 東京大学 | データ入出力制御装置および半導体記憶装置システム |
| US8694853B1 (en) | 2010-05-04 | 2014-04-08 | Apple Inc. | Read commands for reading interfering memory cells |
| US8799747B2 (en) | 2010-06-03 | 2014-08-05 | Seagate Technology Llc | Data hardening to compensate for loss of data retention characteristics in a non-volatile memory |
| FR2961613B1 (fr) * | 2010-06-18 | 2012-07-27 | Commissariat Energie Atomique | Procede de protection memoire configurable contre les erreurs permanentes et transitoires et dispositif apparente |
| US8572423B1 (en) | 2010-06-22 | 2013-10-29 | Apple Inc. | Reducing peak current in memory systems |
| US8533550B2 (en) | 2010-06-29 | 2013-09-10 | Intel Corporation | Method and system to improve the performance and/or reliability of a solid-state drive |
| US8595591B1 (en) | 2010-07-11 | 2013-11-26 | Apple Inc. | Interference-aware assignment of programming levels in analog memory cells |
| US9104580B1 (en) | 2010-07-27 | 2015-08-11 | Apple Inc. | Cache memory for hybrid disk drives |
| US8767459B1 (en) | 2010-07-31 | 2014-07-01 | Apple Inc. | Data storage in analog memory cells across word lines using a non-integer number of bits per cell |
| US8856475B1 (en) | 2010-08-01 | 2014-10-07 | Apple Inc. | Efficient selection of memory blocks for compaction |
| US9146875B1 (en) * | 2010-08-09 | 2015-09-29 | Western Digital Technologies, Inc. | Hybrid drive converting non-volatile semiconductor memory to read only based on life remaining |
| WO2012020278A1 (en) | 2010-08-13 | 2012-02-16 | Sandisk Il Ltd. | Data coding using divisions of memory cell states |
| US8694854B1 (en) | 2010-08-17 | 2014-04-08 | Apple Inc. | Read threshold setting based on soft readout statistics |
| US9021181B1 (en) | 2010-09-27 | 2015-04-28 | Apple Inc. | Memory management for unifying memory cell conditions by using maximum time intervals |
| EP2633409A4 (en) * | 2010-10-27 | 2014-07-23 | Lsi Corp | ADAPTIVE ECC TECHNIQUES FOR FLASH MEMORY AND BASED ON DATA STORAGE |
| CN103221928B (zh) | 2010-10-29 | 2016-01-20 | 英派尔科技开发有限公司 | 用于固态驱动器的擦除次数减少的高级数据编码 |
| JP5720210B2 (ja) * | 2010-12-02 | 2015-05-20 | 富士通株式会社 | アクセス制御装置、誤り訂正制御方法およびストレージ装置 |
| KR20120064462A (ko) | 2010-12-09 | 2012-06-19 | 삼성전자주식회사 | 메모리 컨트롤러, 이의 오류정정 방법, 및 이를 포함하는 메모리 시스템 |
| CN102142282B (zh) * | 2011-02-21 | 2012-10-24 | 北京理工大学 | 一种NANDFlash存储芯片ECC校验算法的识别方法 |
| US8661221B2 (en) * | 2011-03-16 | 2014-02-25 | International Business Machines Corporation | Leasing fragmented storage between processes |
| US10198350B2 (en) | 2011-07-28 | 2019-02-05 | Netlist, Inc. | Memory module having volatile and non-volatile memory subsystems and method of operation |
| US10380022B2 (en) | 2011-07-28 | 2019-08-13 | Netlist, Inc. | Hybrid memory module and system and method of operating the same |
| US10838646B2 (en) | 2011-07-28 | 2020-11-17 | Netlist, Inc. | Method and apparatus for presearching stored data |
| US8910017B2 (en) | 2012-07-02 | 2014-12-09 | Sandisk Technologies Inc. | Flash memory with random partition |
| KR102049281B1 (ko) | 2012-10-23 | 2019-11-27 | 삼성전자주식회사 | 불휘발성 메모리 및 컨트롤러를 포함하는 메모리 시스템, 그리고 불휘발성 메모리에 데이터를 프로그램하는 프로그램 방법 |
| US8996951B2 (en) | 2012-11-15 | 2015-03-31 | Elwha, Llc | Error correction with non-volatile memory on an integrated circuit |
| CN103077096A (zh) * | 2012-12-31 | 2013-05-01 | 记忆科技(深圳)有限公司 | 数据纠错系统、固态硬盘及数据纠错方法 |
| CN104919433B (zh) | 2013-01-11 | 2017-10-31 | 英派尔科技开发有限公司 | 用于闪存的页面分配 |
| KR101742462B1 (ko) | 2013-02-27 | 2017-06-01 | 엠파이어 테크놀로지 디벨롭먼트 엘엘씨 | 메모리 디바이스들을 위한 선형 프로그래밍 기반 디코딩 |
| US10372551B2 (en) | 2013-03-15 | 2019-08-06 | Netlist, Inc. | Hybrid memory system with configurable error thresholds and failure analysis capability |
| US9436600B2 (en) | 2013-06-11 | 2016-09-06 | Svic No. 28 New Technology Business Investment L.L.P. | Non-volatile memory storage for multi-channel memory system |
| CN104111893A (zh) * | 2013-06-21 | 2014-10-22 | 芜湖美的厨卫电器制造有限公司 | 数据的存储方法 |
| JP5733766B2 (ja) * | 2013-11-07 | 2015-06-10 | 国立大学法人 東京大学 | データ入出力制御装置および半導体記憶装置システム |
| US10248328B2 (en) | 2013-11-07 | 2019-04-02 | Netlist, Inc. | Direct data move between DRAM and storage on a memory module |
| WO2015088552A1 (en) | 2013-12-13 | 2015-06-18 | Empire Technology Development Llc | Low-complexity flash memory data-encoding techniques using simplified belief propagation |
| US10114562B2 (en) | 2014-09-16 | 2018-10-30 | Sandisk Technologies Llc | Adaptive block allocation in nonvolatile memory |
| US10691531B2 (en) * | 2014-12-04 | 2020-06-23 | Western Digital Technologies, Inc. | Systems and methods for multi-zone data tiering for endurance extension in solid state drives |
| CN105988887A (zh) * | 2015-01-31 | 2016-10-05 | 深圳市硅格半导体有限公司 | 存储卡数据处理系统及方法 |
| JP6657634B2 (ja) * | 2015-07-24 | 2020-03-04 | ソニー株式会社 | 符号化装置、メモリシステム、通信システムおよび符号化方法 |
| US9401216B1 (en) * | 2015-09-22 | 2016-07-26 | Sandisk Technologies Llc | Adaptive operation of 3D NAND memory |
| US9817593B1 (en) | 2016-07-11 | 2017-11-14 | Sandisk Technologies Llc | Block management in non-volatile memory system with non-blocking control sync system |
| US11880277B2 (en) * | 2019-09-25 | 2024-01-23 | Advanced Micro Devices, Inc. | Selecting an error correction code type for a memory device |
| US11556416B2 (en) | 2021-05-05 | 2023-01-17 | Apple Inc. | Controlling memory readout reliability and throughput by adjusting distance between read thresholds |
| US11847342B2 (en) | 2021-07-28 | 2023-12-19 | Apple Inc. | Efficient transfer of hard data and confidence levels in reading a nonvolatile memory |
| US11762735B2 (en) | 2021-10-01 | 2023-09-19 | Western Digital Technologies, Inc. | Interleaved ECC coding for key-value data storage devices |
| US11934264B2 (en) | 2021-11-22 | 2024-03-19 | Western Digital Technologies, Inc. | ECC parity biasing for Key-Value data storage devices |
| TWI837829B (zh) * | 2022-09-19 | 2024-04-01 | 慧榮科技股份有限公司 | 存取快閃記憶體模組的方法與相關的快閃記憶體控制器及記憶裝置 |
| KR20240162213A (ko) * | 2023-05-08 | 2024-11-15 | 에스케이하이닉스 주식회사 | 사용 불가능 상태의 메모리 다이에 저장된 유저 데이터를 마이그레이션하는 스토리지 장치 및 그 동작 방법 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4785452A (en) * | 1986-04-25 | 1988-11-15 | International Business Machines Corporation | Error detection using variable field parity checking |
| US5961660A (en) * | 1997-03-03 | 1999-10-05 | International Business Machines Corporation | Method and apparatus for optimizing ECC memory performance |
| US6041001A (en) * | 1999-02-25 | 2000-03-21 | Lexar Media, Inc. | Method of increasing data reliability of a flash memory device without compromising compatibility |
| US6085339A (en) * | 1996-11-01 | 2000-07-04 | Micron Electronics, Inc. | System for memory error handling |
Family Cites Families (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07109717B2 (ja) | 1986-05-31 | 1995-11-22 | キヤノン株式会社 | メモリ書き込み制御方法 |
| JP2685173B2 (ja) | 1986-05-31 | 1997-12-03 | キヤノン株式会社 | メモリ書き込み制御方法 |
| US5268870A (en) | 1988-06-08 | 1993-12-07 | Eliyahou Harari | Flash EEPROM system and intelligent programming and erasing methods therefor |
| US5228046A (en) * | 1989-03-10 | 1993-07-13 | International Business Machines | Fault tolerant computer memory systems and components employing dual level error correction and detection with disablement feature |
| EP0675502B1 (en) | 1989-04-13 | 2005-05-25 | SanDisk Corporation | Multiple sector erase flash EEPROM system |
| US5222109A (en) | 1990-12-28 | 1993-06-22 | Ibm Corporation | Endurance management for solid state files |
| US6230233B1 (en) | 1991-09-13 | 2001-05-08 | Sandisk Corporation | Wear leveling techniques for flash EEPROM systems |
| US5438573A (en) | 1991-09-13 | 1995-08-01 | Sundisk Corporation | Flash EEPROM array data and header file structure |
| JPH06187248A (ja) | 1992-12-16 | 1994-07-08 | Nec Corp | データエラー検出訂正制御回路 |
| JP2856621B2 (ja) | 1993-02-24 | 1999-02-10 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 一括消去型不揮発性メモリおよびそれを用いる半導体ディスク装置 |
| US5388083A (en) | 1993-03-26 | 1995-02-07 | Cirrus Logic, Inc. | Flash memory mass storage architecture |
| US5603001A (en) * | 1994-05-09 | 1997-02-11 | Kabushiki Kaisha Toshiba | Semiconductor disk system having a plurality of flash memories |
| US5838614A (en) * | 1995-07-31 | 1998-11-17 | Lexar Microsystems, Inc. | Identification and verification of a sector within a block of mass storage flash memory |
| US5845313A (en) | 1995-07-31 | 1998-12-01 | Lexar | Direct logical block addressing flash memory mass storage architecture |
| US5907856A (en) | 1995-07-31 | 1999-05-25 | Lexar Media, Inc. | Moving sectors within a block of information in a flash memory mass storage architecture |
| US6125435A (en) | 1995-09-13 | 2000-09-26 | Lexar Media, Inc. | Alignment of cluster address to block addresses within a semiconductor non-volatile mass storage memory |
| US5835935A (en) | 1995-09-13 | 1998-11-10 | Lexar Media, Inc. | Method of and architecture for controlling system data with automatic wear leveling in a semiconductor non-volatile mass storage memory |
| US5860082A (en) | 1996-03-28 | 1999-01-12 | Datalight, Inc. | Method and apparatus for allocating storage in a flash memory |
| US5754565A (en) * | 1996-10-15 | 1998-05-19 | Quantum Corporation | Reconstruction of syndromes for bi-level on-the-fly error correction in disk drive systems |
| US6311290B1 (en) * | 1997-02-14 | 2001-10-30 | Intel Corporation | Methods of reliably allocating, de-allocating, re-allocating, and reclaiming objects in a symmetrically blocked nonvolatile memory having a bifurcated storage architecture |
| US5956743A (en) * | 1997-08-25 | 1999-09-21 | Bit Microsystems, Inc. | Transparent management at host interface of flash-memory overhead-bytes using flash-specific DMA having programmable processor-interrupt of high-level operations |
| US6000006A (en) * | 1997-08-25 | 1999-12-07 | Bit Microsystems, Inc. | Unified re-map and cache-index table with dual write-counters for wear-leveling of non-volatile flash RAM mass storage |
| JPH1173797A (ja) | 1997-08-27 | 1999-03-16 | Sony Corp | 記憶装置 |
| JP3998307B2 (ja) * | 1997-12-25 | 2007-10-24 | 富士通株式会社 | 磁気ディスク装置及び磁気ディスク装置のエラー訂正方法 |
| US6182239B1 (en) * | 1998-02-06 | 2001-01-30 | Stmicroelectronics, Inc. | Fault-tolerant codes for multi-level memories |
| KR100297986B1 (ko) | 1998-03-13 | 2001-10-25 | 김영환 | 플래쉬 메모리 셀 어레이의 웨어 레벨링 시스템 및 웨어 레벨링 방법 |
| JP3421581B2 (ja) | 1998-06-29 | 2003-06-30 | 株式会社日立製作所 | 不揮発性半導体メモリを用いた記憶装置 |
| US6260156B1 (en) | 1998-12-04 | 2001-07-10 | Datalight, Inc. | Method and system for managing bad areas in flash memory |
| JP3937214B2 (ja) | 1999-09-17 | 2007-06-27 | 株式会社ルネサステクノロジ | エラー訂正回数を記録する記憶装置 |
| US6487685B1 (en) * | 1999-09-30 | 2002-11-26 | Silicon Graphics, Inc. | System and method for minimizing error correction code bits in variable sized data formats |
| US6426893B1 (en) | 2000-02-17 | 2002-07-30 | Sandisk Corporation | Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks |
| US6747827B1 (en) * | 2000-03-27 | 2004-06-08 | Texas Instruments Incorporated | Error correction codes applied variably by disk zone, track, sector, or content |
| US20010042230A1 (en) * | 2000-05-10 | 2001-11-15 | Seagate Technology Llc | Sector validation for use in ECC engine validation |
| JP2002091831A (ja) | 2000-09-12 | 2002-03-29 | Hitachi Ltd | データ処理システム及びデータ処理方法 |
| US6941505B2 (en) * | 2000-09-12 | 2005-09-06 | Hitachi, Ltd. | Data processing system and data processing method |
| US7113432B2 (en) * | 2000-09-14 | 2006-09-26 | Sandisk Corporation | Compressed event counting technique and application to a flash memory system |
| US6834331B1 (en) * | 2000-10-24 | 2004-12-21 | Starfish Software, Inc. | System and method for improving flash memory data integrity |
| US6970890B1 (en) * | 2000-12-20 | 2005-11-29 | Bitmicro Networks, Inc. | Method and apparatus for data recovery |
| US6961890B2 (en) * | 2001-08-16 | 2005-11-01 | Hewlett-Packard Development Company, L.P. | Dynamic variable-length error correction code |
-
2003
- 2003-10-02 US US10/678,893 patent/US8412879B2/en active Active
- 2003-10-27 KR KR1020030075140A patent/KR101017443B1/ko not_active Expired - Fee Related
- 2003-10-27 JP JP2003366725A patent/JP4429685B2/ja not_active Expired - Fee Related
- 2003-10-28 AT AT03256792T patent/ATE320041T1/de not_active IP Right Cessation
- 2003-10-28 CN CN2003101046432A patent/CN1499532B/zh not_active Expired - Fee Related
- 2003-10-28 EP EP03256792A patent/EP1424631B1/en not_active Expired - Lifetime
- 2003-10-28 DE DE60303895T patent/DE60303895T2/de not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4785452A (en) * | 1986-04-25 | 1988-11-15 | International Business Machines Corporation | Error detection using variable field parity checking |
| US6085339A (en) * | 1996-11-01 | 2000-07-04 | Micron Electronics, Inc. | System for memory error handling |
| US5961660A (en) * | 1997-03-03 | 1999-10-05 | International Business Machines Corporation | Method and apparatus for optimizing ECC memory performance |
| US6041001A (en) * | 1999-02-25 | 2000-03-21 | Lexar Media, Inc. | Method of increasing data reliability of a flash memory device without compromising compatibility |
Also Published As
| Publication number | Publication date |
|---|---|
| DE60303895D1 (de) | 2006-05-04 |
| JP2004164634A (ja) | 2004-06-10 |
| CN1499532A (zh) | 2004-05-26 |
| US8412879B2 (en) | 2013-04-02 |
| JP4429685B2 (ja) | 2010-03-10 |
| KR101017443B1 (ko) | 2011-02-25 |
| EP1424631B1 (en) | 2006-03-08 |
| ATE320041T1 (de) | 2006-03-15 |
| DE60303895T2 (de) | 2006-10-05 |
| KR20040038711A (ko) | 2004-05-08 |
| EP1424631A1 (en) | 2004-06-02 |
| US20040083333A1 (en) | 2004-04-29 |
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