CN1499532A - 非易失性存储器系统内纠错码的混合实现 - Google Patents
非易失性存储器系统内纠错码的混合实现 Download PDFInfo
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- CN1499532A CN1499532A CNA2003101046432A CN200310104643A CN1499532A CN 1499532 A CN1499532 A CN 1499532A CN A2003101046432 A CNA2003101046432 A CN A2003101046432A CN 200310104643 A CN200310104643 A CN 200310104643A CN 1499532 A CN1499532 A CN 1499532A
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- 238000000034 method Methods 0.000 claims abstract description 84
- 238000011084 recovery Methods 0.000 claims description 17
- 238000012937 correction Methods 0.000 abstract description 3
- 230000003068 static effect Effects 0.000 description 39
- 230000008569 process Effects 0.000 description 36
- 238000010586 diagram Methods 0.000 description 11
- 230000006870 function Effects 0.000 description 10
- 238000007726 management method Methods 0.000 description 10
- 230000008859 change Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 230000002950 deficient Effects 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000013523 data management Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1008—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices
- G06F11/1068—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's in individual solid state devices in sector programmable memories, e.g. flash disk
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- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Quality & Reliability (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
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Abstract
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Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US42191102P | 2002-10-28 | 2002-10-28 | |
US60/421,911 | 2002-10-28 | ||
US60/421911 | 2002-10-28 |
Publications (2)
Publication Number | Publication Date |
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CN1499532A true CN1499532A (zh) | 2004-05-26 |
CN1499532B CN1499532B (zh) | 2011-05-18 |
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Application Number | Title | Priority Date | Filing Date |
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CN2003101046432A Expired - Fee Related CN1499532B (zh) | 2002-10-28 | 2003-10-28 | 非易失性存储器系统内纠错码的混合实现 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8412879B2 (zh) |
EP (1) | EP1424631B1 (zh) |
JP (1) | JP4429685B2 (zh) |
KR (1) | KR101017443B1 (zh) |
CN (1) | CN1499532B (zh) |
AT (1) | ATE320041T1 (zh) |
DE (1) | DE60303895T2 (zh) |
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CN100370395C (zh) * | 2004-07-07 | 2008-02-20 | 精工爱普生株式会社 | 信息处理装置、存储器管理程序及存储器管理方法 |
CN102099793A (zh) * | 2008-06-24 | 2011-06-15 | 桑迪士克以色列有限公司 | 根据固态存储器的擦除计数进行误差校正的方法和装置 |
CN102142282A (zh) * | 2011-02-21 | 2011-08-03 | 北京理工大学 | 一种NAND Flash存储芯片ECC校验算法的识别方法 |
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CN103077096A (zh) * | 2012-12-31 | 2013-05-01 | 记忆科技(深圳)有限公司 | 数据纠错系统、固态硬盘及数据纠错方法 |
CN101779194B (zh) * | 2007-07-09 | 2013-06-05 | 美光科技公司 | 用于存储器的错误校正 |
CN101794623B (zh) * | 2009-06-01 | 2013-11-06 | 深圳市朗科科技股份有限公司 | 存储设备的纠错装置及方法 |
CN104111893A (zh) * | 2013-06-21 | 2014-10-22 | 芜湖美的厨卫电器制造有限公司 | 数据的存储方法 |
CN107924704A (zh) * | 2015-09-22 | 2018-04-17 | 桑迪士克科技有限责任公司 | 3d nand存储器的自适应操作 |
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- 2003-10-28 EP EP03256792A patent/EP1424631B1/en not_active Expired - Lifetime
- 2003-10-28 CN CN2003101046432A patent/CN1499532B/zh not_active Expired - Fee Related
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CN104111893A (zh) * | 2013-06-21 | 2014-10-22 | 芜湖美的厨卫电器制造有限公司 | 数据的存储方法 |
CN107924704A (zh) * | 2015-09-22 | 2018-04-17 | 桑迪士克科技有限责任公司 | 3d nand存储器的自适应操作 |
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Also Published As
Publication number | Publication date |
---|---|
JP4429685B2 (ja) | 2010-03-10 |
CN1499532B (zh) | 2011-05-18 |
EP1424631B1 (en) | 2006-03-08 |
EP1424631A1 (en) | 2004-06-02 |
KR101017443B1 (ko) | 2011-02-25 |
KR20040038711A (ko) | 2004-05-08 |
US8412879B2 (en) | 2013-04-02 |
ATE320041T1 (de) | 2006-03-15 |
DE60303895D1 (de) | 2006-05-04 |
US20040083333A1 (en) | 2004-04-29 |
JP2004164634A (ja) | 2004-06-10 |
DE60303895T2 (de) | 2006-10-05 |
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