CN1469460A - 用于装配电子零件的薄膜承载带 - Google Patents
用于装配电子零件的薄膜承载带 Download PDFInfo
- Publication number
- CN1469460A CN1469460A CNA031373771A CN03137377A CN1469460A CN 1469460 A CN1469460 A CN 1469460A CN A031373771 A CNA031373771 A CN A031373771A CN 03137377 A CN03137377 A CN 03137377A CN 1469460 A CN1469460 A CN 1469460A
- Authority
- CN
- China
- Prior art keywords
- gold
- appearance
- main ingredients
- layer
- pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 116
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 81
- 229910052737 gold Inorganic materials 0.000 claims abstract description 67
- 239000010931 gold Substances 0.000 claims abstract description 67
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 58
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 239000002075 main ingredient Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 23
- 238000010586 diagram Methods 0.000 claims description 20
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 15
- 229910000881 Cu alloy Inorganic materials 0.000 claims 1
- 229910000679 solder Inorganic materials 0.000 abstract description 13
- 239000010410 layer Substances 0.000 abstract 5
- 239000000470 constituent Substances 0.000 abstract 4
- 239000002344 surface layer Substances 0.000 abstract 1
- 241000218202 Coptis Species 0.000 description 73
- 235000002991 Coptis groenlandica Nutrition 0.000 description 73
- 238000007747 plating Methods 0.000 description 36
- 238000000034 method Methods 0.000 description 20
- 239000011248 coating agent Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 12
- 238000009713 electroplating Methods 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 206010040844 Skin exfoliation Diseases 0.000 description 8
- 239000011889 copper foil Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000011888 foil Substances 0.000 description 7
- 239000004952 Polyamide Substances 0.000 description 6
- 229920002647 polyamide Polymers 0.000 description 6
- 239000004760 aramid Substances 0.000 description 5
- 229920003235 aromatic polyamide Polymers 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 125000006267 biphenyl group Chemical group 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 150000002343 gold Chemical class 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000000717 retained effect Effects 0.000 description 4
- 238000004070 electrodeposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 150000002815 nickel Chemical class 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 150000004984 aromatic diamines Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- WURBVZBTWMNKQT-UHFFFAOYSA-N 1-(4-chlorophenoxy)-3,3-dimethyl-1-(1,2,4-triazol-1-yl)butan-2-one Chemical compound C1=NC=NN1C(C(=O)C(C)(C)C)OC1=CC=C(Cl)C=C1 WURBVZBTWMNKQT-UHFFFAOYSA-N 0.000 description 1
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- 241001148715 Lamarckia aurea Species 0.000 description 1
- 229920001646 UPILEX Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000005030 aluminium foil Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- 150000002940 palladium Chemical class 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/4985—Flexible insulating substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/244—Finish plating of conductors, especially of copper conductors, e.g. for pads or lands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85444—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85455—Nickel (Ni) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/85498—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/85598—Fillers
- H01L2224/85599—Base material
- H01L2224/856—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85663—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/85664—Palladium (Pd) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0495—5th Group
- H01L2924/04953—TaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0393—Flexible materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12201—Width or thickness variation or marginal cuts repeating longitudinally
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
本发明公开了一种用于装配电子零件的薄膜承载带,包括绝缘膜和由导电金属制成并设在该绝缘膜表面的布线图,其中含有镍作为主要成份的衬底层形成在由导电金属制成的该布线图表面的至少一部分上,含有钯作为主要成份的中间层形成在该衬底层的表面上,含有金作为主要成份的表层形成在该中间层的表面上,及含有钯作为主要成份的该中间层的平均厚度不超过0.04μm。按照本发明提供的用于装配电子零件的薄膜承载带,对焊盘(连接触点)的引线粘合强度和焊球对球垫的抗剥强度较高,而且这些强度的可变范围较小。
Description
技术领域
本发明涉及一种在将被装配的电子零件的粘合中具有高可靠性、其外部连接触点如焊球也具有高连接可靠性的用于装配电子零件的薄膜承载带(film carrier tape)。本发明中,用于装配电子零件的薄膜承载带包括用于TAB(带式自动焊接)法、COF(覆晶薄膜)法、CSP(芯片尺寸封装)法、BGA(球栅阵列封装)法、双面金属带法、多层接线带法、引线粘合法及倒装片接合法中的那些。
背景技术
关于将电子零件诸如集成电路装配在上面形成有布线图的薄膜承载带上的方法,公知的有,如TAB(带式自动焊接)方法、引线粘合法及倒装片接合法。近年来,随着电子零件被更高度地集成和更密集地装配,适于高密集装配的用于装配电子零件的薄膜承载带,如CSP(芯片尺寸封装)、COF(覆晶薄膜)、BGA(球栅阵列封装)已被应用。在CSP、COF、BGA和TAB中,使用金线的引线粘合法经常被用于在电子零件和薄膜承载带间的粘合。
为实施使用金线的引线粘合,在将与金线粘合的薄膜承载带的引线(焊盘(连接触点))(bonding pad(connecting terminal))部分处,在由导电金属制成的引线表面上形成有镀镍层,在该电镀镍层上进一步形成有镀金层。该镀镍层不仅阻止形成布线图的铜的扩散而且切断用在金线粘合中的超声波。该镀金层是金线被粘合的层,并且为实施金线的粘合,优选地该镀金层是厚的。
在诸如CSP、COF、BGA和TAB的薄膜承载带上,焊球被用作输出端,该焊球和布线图的球垫电性相连。插入的金的量越小,该焊球就越牢固地设置在布线图的球垫上。
然而,在用于装配电子零件的薄膜承载带的生产中,该电镀层通常形成不分开的整体,该电镀层厚度的局部控制使得生产过程复杂,因此显著地降低了生产率。由于此缘故,确定在薄膜承载带中的镀金的厚度需考虑金线对焊盘(连接触点)的粘合性能和焊球固定在球垫上的牢固性,该镀金层的厚度通常被设置在约0.3~0.5μm范围内。考虑到用于引线粘合所必须的金的量,通过形成这么厚的镀金层,金线应该表现出合乎要求的粘合性能,但是当实际测试时,在焊盘(连接触点)和金线间的粘合强度比预料的低。
构成衬底层的镍和作为构成布线图的导电金属的铜扩散进入镀金层被认为是上述现象发生的原因。
通过在该镀镍层和镀金层间设置含有钯作为主要成份的中间层可以阻止上述镍和铜的扩散。
例如,在日本专利公开公布第303254/1998号中公开了一种半导体装置装配的带式承载带的发明,该带式承载带通过在焊盘(连接触点)的表面上形成镀镍层,然后在该镀镍层上镀钯和进一步在该镀钯层上形成镀金层而得到。此外,在日本专利公开公布第102939/1999号和日本专利公开公布第111782/1999号中公开了具有在镀金层下面形成钯层的半导体装置装配带式承载带的发明。
在上述出版物所公开的半导体装置装配带式承载带中,该镀钯层的厚度约为0.05~0.2μm,为防止镍和铜扩散进入镀金层的表面,这样厚度的镀钯层是有效的。然而,已经发现当这样厚度的镀钯层被插入作为中间层时,镀金层被形成在该中间层上,并且通过使用粘合工具将金线与该镀金层粘合,这样粘合的金线的剥离强度的可变范围(variability range)变大。也就是说,通过上述厚度的镀钯层的插入,有效地防止了铜和镍扩散进入镀金层,从而被粘合的线的剥离强度应该自然变高。然而,除了剥离强度的可变范围趋向于变大外,剥离强度并不总是变高。在使用金线的引线粘合中的剥离强度平均不小于8gf,且其理想下限不小于8gf。然而,在常规薄膜承载带中,即使在引线粘合中的平均剥离强度不小于8gf,在具有宽的剥离强度可变范围和低剥离强度的焊盘(连接触点)处也担心会断开。
当如上被粘合的金线被从焊盘(连接触点)强制剥离以观察剥离表面时,剥离表面按引线粘合强度可被分成下面三种剥离状态的任意一种:(1)A型剥离方式(方式A):粘合强度比粘合到焊盘(连接触点)的金线的强度高,所以金线折断而粘合的金线全部保留在焊盘(连接触点)的表面上;(2)B型剥离方式(方式B):金线折断而与焊盘(连接触点)粘合的金线一部分保持在焊盘(连接触点)的表面;及(3)C型剥离方式(方式C):与焊盘(连接触点)粘合的金线大部分在镀金/金线的接触面被剥离掉。A型剥离方式是当以非常好的粘合将金线与形成在焊盘(连接触点)的表面上的电镀层粘结时出现的模式。与其相比,C型剥离方式是当在焊盘(连接触点)的表面上的镀金层和金线间的粘合强度低时出现的模式。在电子零件的引线粘合中,期望金线粘合的方式是A型剥离方式出现在每个焊盘(连接触点)处。然而,可以确定,当如上所述的这么大厚度的钯层形成时,A型剥离方式出现的频率会降低,并且B型或C型剥离方式将经常出现。
因此,即使根据上述的常规技术形成大厚度的钯层,金线的剥离强度的可变范围也增加,并且当粘合线被强制剥离时B型或C型剥离方式容易发生。此外,如果引线粘合强度增加,那么焊球的剥离强度的可变范围将变大,并且通过常规技术同时提高这两种性能是不可能。
发明内容
本发明的目的是提供一种具有高引线粘合强度、窄强度变化范围、高粘合可靠性及设在球垫上的焊球的高连接牢固性的用于装配电子零件的薄膜承载带。
本发明用于装配电子零件的薄膜承载带是一种包括绝缘膜和由导电金属制成并设在该绝缘膜表面上的布线图的薄膜承载带,其中:
含有镍作为主要成份的衬底层形成在由导电金属制成的布线图表面上的至少一部分上,含有钯作为主要成份的中间层形成在该衬底层的表面上,含有金作为主要成份的表层形成在该中间层的表面上,及含有钯作为主要成份的该中间层的平均厚度不超过0.04μm。
在本发明用于装配电子零件的薄膜承载带中,平均厚度不超过0.04μm的极薄的钯层形成在含有镍作为主要成份的衬底层和含有金作为主要成份的表层之间。因此,金线对含有金作为主要成份的表层的粘合强度被增强,且粘合强度被稳定化。此外,通过安置如此的薄的钯中间层,设在该球垫上的焊球很少受含有金作为主要成分的镀金层的影响,因此,该焊球可被稳定地设置。
附图说明
图1是本发明的用于装配电子零件的薄膜承载带的实施例的剖视图。
图2是通过引线粘合将金线粘合到其上的焊盘(连接触点)的剖视图。
图3表示测量粘合强度的方法的示意图。
图4是一组示意性剖视图,每一图表示当被粘合的金线被强制剥离时的焊盘(连接触点)的表面状态。
参考图1至图4,数字10代表绝缘膜,数字11代表焊球孔,数字12代表布线图,数字13代表粘合剂层,数字15代表阻焊剂层,数字17代表焊盘(连接触点或内接线端),数字18代表球垫(外接线端),数字21代表衬底层,数字22代表中间层,数字23代表表层,数字30代表焊球,数字31代表电子零件装配粘合剂,数字32代表电子零件,及数字33代表金线。
具体实施方式
下文将详细描述本发明用于装配电子零件的薄膜承载带。
图1是本发明用于装配电子零件的薄膜承载带的实施例的剖视图。图2是通过引线粘合将金线粘合其上的焊盘(连接触点或内接线端)的剖视图。图3是表示测量粘合强度的方法的示意图。图4是一组示意性剖视图,各图表示当被粘合的金线被强制剥离时焊盘(连接触点或内接线端)的表面状态。
本发明用于装配电子零件的薄膜承载带在有挠性的绝缘膜表面上有布线图。
如图1所示,用来构成本发明用于装配电子零件的薄膜承载带的绝缘膜10进行蚀刻时与酸等接触,而进行粘合时被加热,所以其具有不会被此类化学药品损坏的性质,即耐化学性,及不会由此类受热而变质的性质,即耐热性。用于形成该绝缘膜10的材料的例子包括聚酯、聚胺和聚酰胺。本发明中,优选使用由聚酰胺制成的薄膜。与其它的树脂相比聚酰胺具有突出的耐热性,耐化学性也极佳。
聚酰胺树脂的例子包括由苯均四酸二酐和芳香二胺合成的芳香聚酰胺,及具有由二苯基四羧酸二酐和芳香二胺合成的二苯基骨架的芳香聚酰胺。本发明中,特别优选使用具有二苯基骨架的芳香聚酰胺(例如,可以从Ube Industries,Ltd获得的Upilex S(商品名))。具有二苯基骨架的芳香聚酰胺与其他的芳香聚酰胺相比具有较低的吸水性。本发明中可使用的绝缘膜的厚度通常是在25~125μm的范围内,优选25~75μm。
在构成本发明的用于装配电子零件的薄膜承载带的绝缘膜中,其两侧边缘上形成有导孔(穿孔)。此外,还形成有暴露球垫18的焊球孔11、狭长开口、定位标记孔等。
在本发明的用于装配电子零件的薄膜承载带中,在上述绝缘膜10的表面设有布线图12。该布线图12通常由选择性地蚀刻设在该绝缘膜10表面上的导电金属箔而形成,例如,导电金属箔粘在该绝缘膜10的表面上,优选通过一粘合剂层13粘合,同时在该导电金属箔上形成一光敏抗蚀剂层。然后,该光敏抗蚀剂层经受曝光和显影以形成预定的图案,该导电金属再应用该图案作为遮蔽材料进行蚀刻,由此可形成所需的布线图12。在这里可使用的导电金属的例子包括铝箔和铜箔。对于导电金属箔而言,可使用的金属箔的厚度通常为3~35μm,优选为9~25μm。
尽管导电金属箔通常设在该绝缘膜的至少一面上,但它可以设在该绝缘层的两个面上。
本发明中,优选使用铜箔作为导电金属箔。此处可使用铜箔的例子包括电积铜箔和轧制铜箔。考虑到蚀刻性能和操作性能,优选使用电积铜箔。
如上所述形成布线图后,除了与电子零件电性连接的焊盘(连接触点)17外,在布线图上涂布阻焊剂,然后该阻焊剂受热固化以形成阻焊剂层15。
在从如上形成的阻焊剂层暴露的该焊盘(连接触点或内接线端)17的表面上和在从焊球孔11暴露的该球垫(外接线端)18表面上,形成含有镍作为主要成份的衬底层21。该衬底层21是由镍或镍合金组成的刚性层,此层不仅阻止构成布线图12的铜的扩散而且切断施加在引线粘合中的超声波。该衬底层的厚度通常是在0.1~5μm的范围内,优选0.2~2μm。该衬底层21可通过例如电镀法沉积镍或镍合金而形成。
本发明用于装配电子零件的薄膜承载带包括在该衬底层21表面上的含有钯作为主要成份的中间层22。该中间层22是含有钯作为主要成份的层。在这层中,钯的含量按原子数目计不少于50%,也可含有其他金属如镍、铜和金。含有钯作为主要成份的中间层22没有常规薄膜承载带中镍层和金层之间形成的钯层那么厚。该中间层的平均厚度不超过0.04μm,优选为0.002~0.035μm,特别优选为0.005~0.035μm。该中间层可通过例如电镀法沉积钯或含有钯作为主要成份的合金而形成。
本发明用于装配电子零件的薄膜承载带在该中间层22表面上具有含有金作为主要成份的表层23。该表层23的平均厚度通常在0.1~2μm,优选为0.2~1μm。该表层23是含有金作为主要成份的层。在这层中,金的含量按原子数目计不少于50%,有时也含有其他金属如镍、铜、钯和钴。在本发明用于装配电子零件的薄膜承载带中,含有钯作为主要成份的极薄中间层22如上设置,并且依靠含有钯作为主要成份的中间层22,镍和铜的扩散被阻止。因此,在含有金作为主要成份的表层23的表面上金的含量按原子数目计不少于93%,优选按原子数目计不少于95%,在表层23的表面上镍的含量通常按原子数目计不超过5%,优选按原子数目计不超过4%。在表层23的表面上铜的含量通常按原子数目计不超过3%,优选按原子数目计不超过2%。本发明中,存在于表面上的金属含量可通过使用ESCA(X射线光电子分析装置)测得的值计算出来。在表层23的表面上,镍和铜通常以它们的氧化物或氢氧化物的形式存在,而在本发明中,存在于表面上的此金属的含量按照在那些化合物中含有的金属原子数目的百分数来表示。
该表层23可通过例如电镀法沉积金而形成。在本发明用于装配电子零件的薄膜承载带中,可多次进行镀金以形成表层23。特别是在本发明中,为形成含有金作为主要成份的表层,优选地在主电镀之前进行金的预电镀。在这种情况下,由预电镀形成的镀金层厚度与由主电镀形成的镀金层厚度的比通常是在1∶10~1∶200的范围内。
如上形成的衬底层21、中间层22和表层23的平均总厚度通常是在0.2~7μm的范围内,优选在0.4~3μm的范围内。
进一步地,在本发明中,中间层22的平均厚度与衬底层21的平均厚度的比(钯∶镍)优选是在1∶2.5~1∶2500的范围内。
此外,在本发明中,中间层22的平均厚度与表层23的平均厚度的比(钯∶金)优选是在1∶2.5~1∶1000的范围内,而含金作为主要成份的表层的平均厚度与含镍作为主要成份的衬底层的平均厚度的比(金∶镍)优选是在1∶0.05~1∶50的范围内。
如上所述通过调整在本发明用于装配电子零件的薄膜承载带的焊盘(连接触点)和球垫上的电镀厚度比率,粘合强度比金线的强度高时,强制剥离与焊盘(连接触点)粘合的金线的剥离方式为A型剥离方式(见图4),而金线从焊盘(连接触点)的表面剥离下的B型或C型剥离方式不会发生。因此,出现非常好的对金线的粘合性能,此外,连接到球垫上的焊球的切变强度也高。
在本发明用于装配电子零件的薄膜承载带中,如图1所示,电子零件32通过电子零件装配粘合剂31被粘结和固定在阻焊剂层15的表面上,然后金线33通过引线粘合法粘合到电子零件32的一端,金线33的另一端通过引线粘合粘合到焊盘(连接触点)17。在引线粘合中,使用了粘合工具(图中未显示),此后,将焊球30放在球垫18的焊球孔11内,以形成对外界的连接部分。
在本发明用于装配电子零件的薄膜承载带中,如上所述含有钯作为主要成份的极薄层形成中间层22,由此,铜和镍对含有金作为主要成份的表层23的扩散可被限制在一定程度内,此外,即使含有金作为主要成份的表层23很薄,也可获得金线33对焊盘(连接触点)17的非常好的粘合性能。也就是说,金线33的引线粘合强度的平均值通常不小于8gf,优选不小于9gf,并且在每一个引线内引线粘合强度的可变范围都是窄的,通常不超过1gf,优选不超过0.6gf。金线33的引线粘合强度按如下的方式测量。通过引线粘合把直径为25μm的金线33与上述的焊盘(连接触点)17粘合,然后,如图3所示,将弯钩挂在这样粘合的金线33上,接着通过提拉金线33测量金线33的引线粘合强度。在本发明用于装配电子零件的薄膜承载带中,金线33的引线粘合强度的最小值可被增加到不少于8gf,优选不少于8.5gf。
当被粘合到焊盘(连接触点)17的金线33被强制剥离时,焊盘(连接触点)的表面变成如图4所示的状态。图4中表明的A型剥离方式(方式A)是在粘合强度比金线33的强度高的情况下观察到的方式,并且在此方式中,金线33与衬底层21、中间层22和表层23粘合如此牢固,结果即使欲剥离掉金线33,金线33被折断而金线33的所有与焊盘(连接触点)17的表面粘合的部分都保留在焊盘(连接触点)17的表面上。金线33的此种剥离状态必需的剥离强度通常是在10.0gf±1.0gf的范围内,而这意谓着金线33对焊盘(连接触点)的粘合强度比金线33本身的强度高。
B型剥离方式(方式B)是这样一种方式,其中,通过金线33的强制剥离,金线33被折断而大约一半与焊盘(连接触点)的表面粘合的金线33被剥离掉但是另一半保留在焊盘(连接触点)17的表面上。金线33的此种剥离状态必需的剥离强度通常是在7.7gf±1.4gf的范围内,而这意谓着金线33对焊盘(连接触点)的粘合强度比方式A的低。
在C型剥离方式(方式C)中,在金线33和含有金作为主要成份的表层23之间的粘合强度更低,尽管金线被粘合到焊盘(连接触点)上,但通过金线33的强制剥离,金线33的大部分被从焊盘(连接触点)剥离掉,即有时只有金线的一部分保留在表层23上,但是大部份粘合到焊盘(连接触点)的金线33被剥离掉。金线33对焊盘(连接触点)的粘合强度通常是在4.3gf±1.5gf的范围内,比B型剥离方式低得多。
在本发明用于装配电子零件的薄膜承载带中,由于上述在焊盘(连接触点)17表面上形成的电镀层结构,当金线33被强制剥离时焊盘(连接触点)17的横截面状态总是变成A型剥离方式状态,从不会变成B型或C型剥离方式状态。
强制剥离中的上述剥离状态(方式A)可通过形成极薄的中间层22而获得,而不是那么多地依赖于含有金作为主要成份的表层23内的金含量。因此,在本发明用于装配电子零件的薄膜承载带中,含有金作为主要成份的表层23的厚度可被减小。即使表层23的厚度减小了,但是金线33的引线粘合性能也不降低,此外,通过减小表层23的厚度,设在球垫18上的焊球30对球垫18表面的粘合性能可被加强。为了将焊球30粘到球垫18的表面,存在于球垫表面上的金的量优选较少,但是很难通过电镀技术局部改变电镀厚度。然而,在本发明用于装配电子零件的薄膜承载带中,由于含有钯作为主要成份的极薄中间层22的形成,即使表层23是薄的,金线33的引线粘合强度也不降低。此外,随着含有金作为主要成分的表层23的厚度变小,焊球30对球垫18表面的粘合性能被进一步加强。其结果,焊球的平均剥离强度通常不小于400gf,优选不小于450gf,且剥离强度的可变范围通常不超过±30gf,优选不超过±25gf。也就是说,按照本发明的薄膜承载带,焊球的剥离强度从总体上可达成一致。
为获得在焊盘(连接触点)17表面的引线粘合性能和焊球30对球垫18的粘合性能间良好的平衡,含有钯作为主要成份的中间层22的厚度需要大大地减小,即如本发明采用的,不超过0.04μm。为把焊球30对球垫18的粘合强度稳定地保持在高水平,把含有钯作为主要成份的中间层的厚度设置在前述的范围内并薄薄地形成含有金作为主要成份的表层23是非常有益的。
在本发明用于装配电子零件的薄膜承载带中,在含有镍作为主要成份的衬底层21和含有金作为主要成份的表层23之间设置有含钯作为主要成份和平均厚度不超过0.04μm的中间层22,通过设置此含有钯作为主要成份的薄中间层,即使当表层23的厚度减小到常规薄膜承载带的大约1/2时,引线粘合性能也不降低,此外,在球垫18表面上形成的表层23也可变薄。根据本发明,含有钯作为主要成份的上述厚度的中间层22的形成使在球垫18的表面上高强度地保持焊球成为可能,而没有使焊盘(连接触点)17表面上的引线粘合性能退化。
进一步地,因为表层23可被薄薄地形成,所以用于形成薄膜承载带的昂贵材料即金的量可以降低,由此,可以提供价廉和高可靠性的薄膜承载带。
在本发明用于装配电子零件的薄膜承载带中,如在CSP、COF、BGA、TAB等中,装配的电子零件占据的面积和用于安置作为外连接部分的焊球占据的面积几乎相等,因此,本发明的薄膜承载带作为用于这样一种装配电子零件的薄膜承载带是非常有用的:即将电子零件的隆起部和焊盘(连接触点)通过引线粘合法来连接。
本发明的结构不仅对于CSP、COF、BGA和TAB是非常有效的,而且对于具有在由导电金属箔制成的布线图的表面上主要由镍组成的衬底层、具有在衬底层表面上主要由钯组成的中间层及具有在中间层的表面上主要由金组成的表层的层结构的薄膜承载带和多层薄片也是非常有效的。
本发明用于装配电子零件的薄膜承载带包括在均由导电金属制成的焊盘(连接触点)和球垫的表面上含有镍作为主要成份的衬底层、在该衬底层上含有钯作为主要成份的特定厚度的中间层,及在该中间层的表面上含有金作为主要成份的表层。在焊盘(连接触点)表面上,为增强对金线的引线粘合性能,优选增加该表层的厚度以提高受引线粘合的金的量。另一方面,在球垫的表面上,需要设置焊球,同时为确保焊球对球垫的良好粘合性能,优选降低作为在球垫上形成的表层的镀金层的厚度。因此,在焊盘(连接触点)表面需要的金属和在球垫上设置该焊球需要的金属是彼此矛盾的。在本发明中,含有钯作为主要成份的中间层的厚度减小至不超过0.04μm,由此,焊球对球垫的粘合性能被增强而没有破坏在焊盘(连接触点)上的引线粘合性能。
进一步地,由于设置这样一种含钯作为主要成份的薄中间层并在其上形成表层,金线对焊盘(连接触点)的引线粘合性能的可变范围和设在球垫表面上的焊球的剥离性质的可变范围变小,因此,本发明用于装配电子零件的薄膜承载带具有极高的可靠性。
此外,因为表层的厚度被减小降低了金的使用量,所以在生产薄膜承载带中的经济效益也很大。
实施例
参考下面的实施例进一步地详细描述本发明,但是本发明决不应解释为限制于那些实施例。实施例1,对比实施例1
厚度为50μm的聚酰胺薄膜(可以从Ube Industries,Ltd获得,UpilexS)被冲孔以形成导孔、焊球孔等,然后通过加热和加压将平均厚度为25μm的电积铜箔层压在该薄膜上。随后,铜箔的表面用光敏抗蚀剂涂覆。获得的光敏抗蚀剂层曝光和以常规的方式显影以形成预定的图案。然后,进行蚀刻以形成预定的布线图。
由此形成的布线图除了引线部分外用阻焊剂涂覆,接着热固化阻焊剂。
然后,如上所述形成的从阻焊剂层暴露的引线(焊盘(连接触点))部分和从焊球孔暴露的球垫部分进行酸洗以脱脂。接着,在下述条件下在焊盘和球垫的表面上镀镍。
电镀液:硫酸镍镀液
电流密度:1.3A/dm2
预设的电镀厚度:0.35μm
在如上形成的镀镍层的表面上,在下述条件下形成镀钯层。在对比实施例1中,不形成镀钯层。
电镀液:Pd-452(日本Ferro提供)
电流密度:1.0A/dm2
预设的电镀厚度:0.004μm
然后,在如上形成的镀钯层的表面上,在下述条件下按总的预设电镀厚度达到0.35μm的形式形成镀金层。
金预电镀液:Aurobond TN(日本Electroplating Engineers公司提供)
电流密度:0.9A/dm2
预设电镀厚度:0.01μm
金主电镀液:Temperex#8400(日本Electroplating Engineers公司提供)
电流密度:0.4A/dm2
预设电镀厚度:0.35μm
具有如上形成的电镀层的薄膜承载带在190℃下加热3分钟以消除热变形(warpage)然后进一步在150℃下加热2小时以进行引线粘合预处理。
由此形成的焊盘(连接触点)使用ESCA(X射线光电子分析装置)进行表面分析。结果如表1所示。
表1
金含量 | 镍含量 | 铜含量 | |
实施例1 | 95.35%原子数 | 2.90%原子数 | 1.75%原子数 |
对比实施例1 | 92.67%原子数 | 6.04%原子数 | 1.29%原子数 |
然后,集成电路被粘在薄膜承载带的阻焊剂层上。再如图2所示,直径为25μm的金线用600mW的超声波加热至160℃以通过引线粘合法将集成电路的电极电性连接至焊盘(连接触点)。
如图3所示,将弯钩挂在这样由引线粘合法粘合的金线上以测量引线粘合强度。结果如表2所示。
然后,将平均直径为330μm的低熔焊球安置于在聚酰胺薄膜上形成的焊球孔内,并使用膏型焊剂WS613-M3(日本Alpha Metals Ltd.提供)作为焊剂,在峰值温度为200~210℃、183℃或更高温度下加热30~40秒、预加热温度为155~175℃和预加热时间40~80秒的条件下进行球连接以制备用于装配电子零件的薄膜承载带。
进一步地,在5.0μm的测试高度和80μm/sec的测试速度条件下测量在薄膜承载带上的焊球的剥离强度。结果如表2所示。
在下表中,标准差表示引线粘合强度和焊球剥离强度的可变范围。
表2
实施例1 | 对比实施例1 | |||
镀金厚度:0.35μm | 镀金厚度:0.35μm | |||
镀钯厚度:0.004μm | 镀钯厚度:0μm | |||
镀镍厚度:0.35μm | 镀镍厚度:0.35μm | |||
引线粘合强度 | 焊球剥离强度 | 引线粘合强度 | 焊球剥离强度 | |
平均值 | 9.6gf | 500.7gf | 8.5gf | 504.2gf |
最大值 | - | 539.7gf | - | 541.3gf |
最小值 | - | 472.0gf | - | 474.8gf |
标准偏差 | 0.5gf | 21.6gf | 2.0gf | 24.3gf |
分别在实施例1和对比实施例1的中,强制剥离通过引线粘合法与焊盘(连接触点)粘合的金线以观察焊盘(连接触点)的表面。其结果,在实施例1中,方式A的剥离发生率为100%(焊盘的数目),而方式B或方式C的剥离不发生,但在对比实施例1中,方式A的剥离发生率为40%,方式B的剥离发生率为30%,而方式C的剥离发生率为30%。
在薄膜承载带中,当平均粘合强度为10.1gf和可变范围(标准差)为1.0gf的粘合线被剥离时,方式A的剥离发生,当平均粘合强度为7.7gf和可变范围(标准差)为1.3gf的粘合线被剥离时,方式B的剥离发生,而当平均粘合强度为4.3gf和可变范围(标准差)为1.5gf的粘合线被剥离时,方式C的剥离发生。实施例2
除了镀钯层的厚度变为0.002μm及镀金层厚度变为0.50μm外,按照和实施例1相同的方式制备薄膜承载带。然后,按照和实施例1相同的方式测量该薄膜承载带的各种性能。
结果如表3所示。对比实施例2
除了不形成镀钯层外,按照和实施例2相同的方式制备薄膜承载带。然后,按照和实施例1相同的方式测量该薄膜承载带的各种性能。
结果如表3所示。
表3
实施例3
实施例2 | 对比实施例2 | |||
镀金厚度:0.50μm | 镀金厚度:0.50μm | |||
镀钯厚度:0.002μm | 镀钯厚度:0μm | |||
镀镍厚度:0.35μm | 镀镍厚度0.35μm | |||
引线粘合强度 | 焊球剥离强度 | 引线粘合强度 | 焊球剥离强度 | |
平均值 | 9.9gf | 482.5gf | 9.0gf | 483.2gf |
最大值 | - | 504.8gf | - | 520.7gf |
最小值 | - | 459.5gf | - | 440.3gf |
标准差 | 0.5gf | 17.7gf | 0.8gf | 32.8gf |
除了镀钯层的厚度变为0.01μm和镀金层厚度变为0.50μm外,按照和实施例1相同的方式制备薄膜承载带。然后,按照和实施例1相同的方式测量该薄膜承载带的各种性能。结果如表4所示。对比实施例3
除了不形成镀钯层外,按照和实施例3相同的方式制备薄膜承载带。然后,按照和实施例1相同的方式测量该薄膜承载带的各种性能。
结果如表4所示。
表4
实施例3 | 对比实施例3 | |||
镀金厚度:0.50μm | 镀金厚度:0.50μm | |||
镀钯厚度:0.01μm | 镀钯厚度:0μm | |||
镀镍厚度:0.35μm | 镀镍厚度:0.35μm | |||
引线粘合强度 | 焊球剥离强度 | 引线粘合强度 | 焊球剥离强度 | |
平均值 | 9.9gf | 481.9gf | 9.0gf | 483.2gf |
最大值 | - | 502.9gf | - | 520.7gf |
最小值 | - | 447.8gf | - | 440.3gf |
标准差 | 0.3gf | 18.7gf | 0.8gf | 32.8gf |
Claims (8)
1、一种用于装配电子零件的薄膜承载带,包括绝缘膜和由导电金属制成并设在该绝缘膜表面的布线图,其特征在于:
含有镍作为主要成份的衬底层形成在该由导电金属制成的布线图表面的至少一部分上,含有钯作为主要成份的中间层形成在该衬底层的表面上,含有金作为主要成份的表层形成在该中间层的表面上,及含有钯作为主要成份的该中间层的平均厚度不超过0.04μm。
2、如权利要求1所述的用于装配电子零件的薄膜承载带,其特征在于,含有钯作为主要成份的该中间层的平均厚度与含有金作为主要成份的该表层的平均厚度的比,即钯∶金是在1∶2.5~1∶1000的范围内。
3、如权利要求1所述的用于装配电子零件的薄膜承载带,其特征在于,含有钯作为主要成份的该中间层的平均厚度与含有镍作为主要成份的该衬底层的平均厚度的比,即钯∶镍是在1∶2.5~1∶2500的范围内。
4、如权利要求1所述的用于装配电子零件的薄膜承载带,其特征在于,含有金作为主要成份的该表层的平均厚度与含有镍作为主要成份的该衬底层的平均厚度的比,即金∶镍是在1∶0.05~1∶50的范围内。
5、如权利要求1所述的用于装配电子零件的薄膜承载带,其特征在于,含有金作为主要成份的该表层的表面金的含量按原子数目计不少于93%及镍的含量按原子数目计不超过5%。
6、如权利要求1所述的用于装配电子零件的薄膜承载带,其特征在于,含有金作为主要成份的该表层的表面铜的含量按原子数目计不超过3%。
7、如权利要求1所述的用于装配电子零件的薄膜承载带,其特征在于,含有镍作为主要成份的衬底层、含有钯作为主要成份的中间层和含有金作为主要成份的表层形成在与电子零件电性连接的该布线图的内接线端和/或薄膜承载带的外接线端处。
8、如权利要求1所述的用于装配电子零件的薄膜承载带,其特征在于,由导电金属制成的布线图由铜或铜合金形成。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002180270A JP3758610B2 (ja) | 2002-06-20 | 2002-06-20 | 電子部品実装用フィルムキャリアテープ |
JP2002180270 | 2002-06-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1469460A true CN1469460A (zh) | 2004-01-21 |
CN1265450C CN1265450C (zh) | 2006-07-19 |
Family
ID=29996601
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031373771A Expired - Fee Related CN1265450C (zh) | 2002-06-20 | 2003-06-19 | 用于装配电子零件的薄膜承载带 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6891198B2 (zh) |
JP (1) | JP3758610B2 (zh) |
KR (1) | KR100568572B1 (zh) |
CN (1) | CN1265450C (zh) |
TW (1) | TWI222688B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100426590C (zh) * | 2004-04-28 | 2008-10-15 | 信荣高科技股份有限公司 | 连接器用连接端子及其表面处理方法 |
CN101431029B (zh) * | 2007-11-06 | 2010-07-07 | 李俊德 | 封装导线用的复合金属线及其制造方法 |
CN101569968B (zh) * | 2008-05-04 | 2011-06-29 | 李俊德 | 封装导线用的银合金焊线及其制造方法 |
CN102456656A (zh) * | 2010-10-28 | 2012-05-16 | 英属维尔京群岛商杰群科技有限公司 | 芯片封装结构 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004036905A1 (de) * | 2004-07-29 | 2006-03-23 | Infineon Technologies Ag | Vertikales Leistungshalbleiterbauteil mit einem Halbleiterchip und Verfahren zur Herstellung desselben |
JP2007067272A (ja) * | 2005-09-01 | 2007-03-15 | Nitto Denko Corp | Tab用テープキャリアおよびその製造方法 |
TWI449137B (zh) * | 2006-03-23 | 2014-08-11 | Ceramtec Ag | 構件或電路用的攜帶體 |
JP2007335511A (ja) * | 2006-06-13 | 2007-12-27 | Fujitsu Ltd | 半導体集積回路装置の設計方法、半導体集積回路装置およびその製造方法 |
US8232655B2 (en) | 2008-01-03 | 2012-07-31 | International Business Machines Corporation | Bump pad metallurgy employing an electrolytic Cu / electorlytic Ni / electrolytic Cu stack |
US8110752B2 (en) * | 2008-04-08 | 2012-02-07 | Ibiden Co., Ltd. | Wiring substrate and method for manufacturing the same |
US9269681B2 (en) * | 2012-11-16 | 2016-02-23 | Qualcomm Incorporated | Surface finish on trace for a thermal compression flip chip (TCFC) |
KR20200115756A (ko) | 2019-03-25 | 2020-10-08 | 삼성디스플레이 주식회사 | 회로기판 및 이를 포함한 표시장치 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5001542A (en) * | 1988-12-05 | 1991-03-19 | Hitachi Chemical Company | Composition for circuit connection, method for connection using the same, and connected structure of semiconductor chips |
US5821627A (en) * | 1993-03-11 | 1998-10-13 | Kabushiki Kaisha Toshiba | Electronic circuit device |
JPH08236586A (ja) * | 1994-12-29 | 1996-09-13 | Nitto Denko Corp | 半導体装置及びその製造方法 |
US5851911A (en) * | 1996-03-07 | 1998-12-22 | Micron Technology, Inc. | Mask repattern process |
JP3160555B2 (ja) | 1996-07-15 | 2001-04-25 | 松下電子工業株式会社 | 半導体装置およびその製造方法 |
JPH10303254A (ja) | 1997-04-30 | 1998-11-13 | Hitachi Cable Ltd | 半導体素子搭載用テープキャリア、およびそのテープキャリアを使用した半導体装置 |
JPH11102939A (ja) | 1997-09-26 | 1999-04-13 | Hitachi Cable Ltd | 半導体素子搭載用テープキャリアおよびこれを用いた半導体装置 |
JPH11111782A (ja) | 1997-10-08 | 1999-04-23 | Hitachi Cable Ltd | 半導体装置用テープキャリア及びそのテープキャリアを使用した半導体装置 |
-
2002
- 2002-06-20 JP JP2002180270A patent/JP3758610B2/ja not_active Expired - Fee Related
-
2003
- 2003-06-19 CN CNB031373771A patent/CN1265450C/zh not_active Expired - Fee Related
- 2003-06-19 TW TW092116654A patent/TWI222688B/zh not_active IP Right Cessation
- 2003-06-20 US US10/600,980 patent/US6891198B2/en not_active Expired - Fee Related
- 2003-06-20 KR KR1020030040240A patent/KR100568572B1/ko not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100426590C (zh) * | 2004-04-28 | 2008-10-15 | 信荣高科技股份有限公司 | 连接器用连接端子及其表面处理方法 |
CN101431029B (zh) * | 2007-11-06 | 2010-07-07 | 李俊德 | 封装导线用的复合金属线及其制造方法 |
CN101569968B (zh) * | 2008-05-04 | 2011-06-29 | 李俊德 | 封装导线用的银合金焊线及其制造方法 |
CN102456656A (zh) * | 2010-10-28 | 2012-05-16 | 英属维尔京群岛商杰群科技有限公司 | 芯片封装结构 |
Also Published As
Publication number | Publication date |
---|---|
US6891198B2 (en) | 2005-05-10 |
JP3758610B2 (ja) | 2006-03-22 |
US20040086739A1 (en) | 2004-05-06 |
KR100568572B1 (ko) | 2006-04-07 |
CN1265450C (zh) | 2006-07-19 |
JP2004023072A (ja) | 2004-01-22 |
TW200400576A (en) | 2004-01-01 |
KR20040022385A (ko) | 2004-03-12 |
TWI222688B (en) | 2004-10-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1082332C (zh) | 多层印刷电路板 | |
CN1765161B (zh) | 刚挠性电路板 | |
JP3841768B2 (ja) | パッケージ部品及び半導体パッケージ | |
TWI358973B (zh) | ||
US4997517A (en) | Multi-metal layer interconnect tape for tape automated bonding | |
EP2209358A1 (en) | Multilayer printed wiring board and method for manufacturing multilayer printed wiring board | |
JP5370765B2 (ja) | 半導体素子搭載用パッケージ基板とその製造方法 | |
CN1265450C (zh) | 用于装配电子零件的薄膜承载带 | |
US20040161626A1 (en) | Tape substrate and method for fabricating the same | |
CN1525544A (zh) | 利用无引线电镀工艺制造的封装基片及其制造方法 | |
JP2006294650A (ja) | 電子部品の実装方法 | |
JPH10340973A (ja) | 金属ベース半導体回路基板 | |
CN101079407A (zh) | 布线基板及其制造方法以及半导体器件 | |
TW540148B (en) | Method for making circuit device | |
CN1608399A (zh) | 连接基片及用该连接基片的多层布线板和半导体插件用基片和半导体插件以及它们的制造方法 | |
JP5645047B2 (ja) | 半導体素子搭載用パッケージ基板とその製法及び半導体パッケージ | |
WO2010035867A1 (ja) | 半導体素子搭載用パッケージ基板とその製造方法 | |
JP4391671B2 (ja) | 電子部品搭載用基板及びその製造方法 | |
US6451448B1 (en) | Surface treated metallic materials and manufacturing method thereof | |
WO2010035865A1 (ja) | 半導体素子搭載用パッケージ基板及びその製造方法 | |
JP4184540B2 (ja) | 配線基板とその製造方法 | |
JP4054169B2 (ja) | 電子部品実装用フィルムキャリアテープ | |
JP2001144398A (ja) | 配線基板および配線基板の製造方法 | |
KR960008916B1 (ko) | 접착성 테이프 | |
TW543083B (en) | Method for manufacturing semiconductor module |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060719 |