CN1459834A - 提高硼硅玻璃膜及氮化硅膜之间粘合强度的方法 - Google Patents
提高硼硅玻璃膜及氮化硅膜之间粘合强度的方法 Download PDFInfo
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 53
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 53
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 15
- 229910052796 boron Inorganic materials 0.000 claims description 15
- 239000000428 dust Substances 0.000 claims description 13
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 12
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 10
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Abstract
本发明是提供一种提高硼硅玻璃膜及氮化硅膜之间粘合强度的方法。首先提供一半导体基底，其上形成有一氮化硅膜；接着将该氮化硅膜接触一含氧电浆，随后再沉积一硼硅玻璃膜于该氮化硅膜之上；经过60秒臭氧电浆处理过硼硅玻璃膜底下的氮化硅膜之后，该硼硅玻璃膜的Kapp值比未处理的Kapp值可增加约50％左右。
Description
技术领域
本发明是关于一种半导体制程技术，特指一种可整合于半导体制程中，并加强硼硅玻璃(boro-silicate glass，硼硅玻璃)膜及氮化硅膜之间的粘合强度的方法，以避免剥离(peeling)现象发生。
背景技术
众所周知，在制作半导体元件的过程中，往往牵涉许多道的薄膜沉积以及蚀刻步骤，薄膜之间的粘合程度有时是影响产品优良率的重要因素之一。
参阅图1-图5所示，其显示在一半导体基底10上形成一深沟渠的传统步骤。
如图1所示，半导体基底10上形成有一垫氧化层12以及一氮化硅膜14。一般而言，氮化硅膜14是利用低压化学气相沉积(low-pressure chemicalvapor deposition，LPCVD)法形成，其厚度约介于1000-2000埃()之间。
如图2所示，传统制作一深沟渠之前，需在氮化硅膜14表面上先沉积一硼硅玻璃膜16，用来作为硬屏蔽层(hardmask)。一般而言，硼硅玻璃膜16的厚度介于7.5k-15k埃之间，硼的浓度约为5.5wt％左右。
如图3所示，接着于硼硅玻璃膜16上形成一光阻层18。光阻层18具有开口19定义出深沟渠的图案。
如图4所示，接着进行一第一干蚀刻制程，经由开口19于硼硅玻璃膜16及氮化硅膜14中蚀刻出一开口21。
如图5所示，进行第二干蚀刻制程，利用硼硅玻璃膜16为硬屏蔽层，继续经由开口21蚀刻垫氧化层12及半导体基底10，形成深沟渠23。
然而，传统方法形成深沟渠23的过程中(尤其在干蚀刻过程中)，往往会在硼硅玻璃膜16及氮化硅膜14之间靠近深沟渠23附近，形成边缘翘起或剥离(peeling)，如编号25所示。如此一来，即会造成深沟渠23位置的偏差，或甚至图案转移失败。
为了解决硼硅玻璃膜16及氮化硅膜14之间的粘合问题，一种作法是降低硼硅玻璃膜16中硼含量。然而，此方法的缺点是：将造成后续清理硼硅玻璃膜16的困扰。这是由于在后续以湿蚀刻方式清洗硼硅玻璃膜16的步骤中，硼硅玻璃膜16中硼含量越高，则越容易清洗干净。
因此，如何能保持硼硅玻璃膜16中硼含量在原先水准，又能提高硼硅玻璃膜16及氮化硅膜14之间的粘合强度，即为目前面临的问题。
此外，传统制作深沟渠的制程中，硼硅玻璃膜16是直接沉积于氮化硅膜14表面上，亦即，在沉积氮化硅膜14与沉积硼硅玻璃膜16的步骤之间，并无其它处理步骤，以改变氮化硅膜14的表面特性。
发明内容
本发明的主要目的是提供一种提高硼硅玻璃膜及氮化硅膜之间的粘合强度的方法，克服现有技术的弊端，达到提高硼硅玻璃膜及氮化硅膜之间的粘合强度的目的。
本发明的另一目的是提供一种提高硼硅玻璃膜及氮化硅膜之间的粘合强度的方法，达到制作高可靠度的深沟渠的目的。
本发明的目的是这样实现的：一种提高氮化硅膜及硼硅玻璃膜之间粘合强度的方法，其特征是：它包含有如下步骤：
(1)提供一半导体基底，其上形成有一氮化硅膜；
(2)将该氮化硅膜接触一含氧电浆；
(3)沉积一硼硅玻璃膜于该氮化硅膜之上。
该氮化硅膜是利用低压化学气相沉积法、电浆辅助气相沉积法或高密度电浆气相沉积法形成。该氮化硅膜的厚度介于1000-2000埃之间。该硼硅玻璃膜的硼浓度介于5-8wt％之间。该硼硅玻璃膜的硼浓度为5.53wt％。该硼硅玻璃膜的厚度介于7.5k-15k埃之间。该含氧电浆为下列之一所构成：臭氧及氧气的混合气体电浆、氧气电浆、一氧化氮电浆、氧化亚氮(N2O)电浆或臭氧混合其它惰性气体电浆。该含氧电浆为臭氧及氧气的混合气体电浆，采用浓度介于2-50wt％的臭氧/氧气混合气体，在高频无线电波频率为1-9w/cm2条件下形成。该含氧电浆是与该氮化硅膜接触5秒-20分钟。
本发明还提供一种制作深沟渠的方法，其特征是：它包含有如下步骤：
(1)提供一基底；
(2)于该基底上形成一氧化层；
(3)于该氧化层上沉积一氮化硅层；
(4)将该氮化硅膜接触一含氧电浆一预定时间；
(5)于该氮化硅层上沉积一硼硅玻璃膜；
(6)利用该硼硅玻璃膜为硬屏蔽，于该基底中干蚀刻出一深沟渠。
该氮化硅膜是利用低压化学气相沉积法、电浆辅助气相沉积法或高密度电浆气相沉积法形成。该氮化硅膜的厚度介于1000-2000埃之间。该硼硅玻璃膜的硼浓度介于5-8wt％之间。该硼硅玻璃膜的硼浓度为5.53wt％。该硼硅玻璃膜的厚度介于7.5k-15k埃之间。该含氧电浆是臭氧及氧气的混合气体电浆，采用浓度介于2-50wt％的臭氧/氧气混合气体，在高频无线电波频率为1-9w/cm2条件下形成。该含氧电浆是下列之一所构成：臭氧及氧气的混合气体电浆、氧气电浆、一氧化氮电浆、氧化亚氮(N2O)电浆或臭氧混合其它惰性气体电浆。该预定时间介于5秒-20分钟之间。
下面结合较佳实施例和附图进一步说明。
附图说明
图1-图5是传统在一半导体基底上形成深沟渠的方法示意图。
图6-图7是本发明的方法示意图。
具体实施方式
参阅图6-图7所示，本发明的方法包括如下步骤：
首先，如图6所示，半导体基底30上形成有一垫氧化层32以及一氮化硅膜34。一般而言，氮化硅膜34可利用低压化学气相沉积(LPCVD)法、电浆辅助气相沉积(plasma-enhanced CVD，PECVD)法、高密度电浆气相沉积(high-density plasma CVD，HDPCVD)法或其它业界常使用的方法形成，其厚度约介于1000-2000埃()之间。在本发明的较佳实施例中，氮化硅膜34是采LPCVD法形成。
在沉积氮化硅膜34之后，进行一氮化硅膜表面处理步骤。此氮化硅膜表面处理步骤是利用一含氧电浆50轰击氮化硅膜34。含氧电浆50可以为臭氧及氧气的混合气体电浆、氧气电浆、一氧化氮电浆、氧化亚氮(nitrous oxide，N2O)电浆、臭氧混合其它惰性气体电浆等等。在本发明的较佳实施例中，是采用浓度介于2-50wt％的臭氧/氧气混合气体，在高频无线电波频率(high frequency radiofrequency，HFRF)为1-9w/cm2条件下，进行5秒-20分钟的电浆表面处理。
如图7所示，接着在氮化硅膜34表面上沉积一硼硅玻璃膜36。在本发明的较佳实施例中，硼硅玻璃膜36的厚度介于7.5k-15k埃之间，硼的浓度约为5.53％wt左右。后续的深沟渠形成步骤与传统方法相同，因此不再赘述。
由于氮化硅膜34表面经过处理，因此硼硅玻璃膜36中的硼浓度可以增加至7-8wt％左右，而不至于降低氮化硅膜34与硼硅玻璃膜36的粘合强度。
表一显示利用修正版粘性测试方法(modified edge lift-off test)所得到的未处理与经过表面处理的Kapp值比较。
表一
| 膜条件(TK＝13K) | Kapp(Mpa-m1/2) |
| BSG(B％＝5.53wt％) | 0.3101 |
| O3treated/BSG(B％＝5.53wt％) | 0.4688 |
表一的结果是在同样厚度为13k埃的硼硅玻璃膜以及硼硅玻璃膜中，硼浓度为5.53wt％条件下进行比较。
由表一的第二列的数据可看出：在经过60秒臭氧电浆处理过硼硅玻璃膜底下的氮化硅膜之后，硼硅玻璃膜的Kapp值为0.4688，比未处理的Kapp值0.3101增加约50％左右。说明本发明的方法显著提高粘合强度。
以上所述仅为本发明的较佳实施例，凡依本发明所做的均等变化与修饰，皆应属于本发明的保护范围之内。
Claims (18)
1、一种提高氮化硅膜及硼硅玻璃膜之间粘合强度的方法，其特征是：它包含有如下步骤：
(1)提供一半导体基底，其上形成有一氮化硅膜；
(2)将该氮化硅膜接触一含氧电浆；
(3)沉积一硼硅玻璃膜于该氮化硅膜之上。
2、根据权利要求1所述的方法，其特征是：该氮化硅膜是利用低压化学气相沉积法、电浆辅助气相沉积法或高密度电浆气相沉积法形成。
3、根据权利要求1所述的方法，其特征是：该氮化硅膜的厚度介于1000-2000埃之间。
4、根据权利要求l所述的方法，其特征是：该硼硅玻璃膜的硼浓度介于5-8wt％之间。
5、根据权利要求4所述的方法，其特征是：该硼硅玻璃膜的硼浓度为5.53wt％。
6、根据权利要求1所述的方法，其特征是：该硼硅玻璃膜的厚度介于7.5k-15k埃之间。
7、根据权利要求1所述的方法，其特征是：该含氧电浆为下列之一所构成：臭氧及氧气的混合气体电浆、氧气电浆、一氧化氮电浆、氧化亚氮(N2O)电浆或臭氧混合其它惰性气体电浆。
8、根据权利要求1所述的方法，其特征是：该含氧电浆为臭氧及氧气的混合气体电浆，采用浓度介于2-50wt％的臭氧/氧气混合气体，在高频无线电波频率为1-9w/cm2条件下形成。
9、根据权利要求1所述的方法，其特征是：该含氧电浆是与该氮化硅膜接触5秒-20分钟。
10、一种制作深沟渠的方法，其特征是：它包含有如下步骤：
(1)提供一基底；
(2)于该基底上形成一氧化层；
(3)于该氧化层上沉积一氮化硅层；
(4)将该氮化硅膜接触一含氧电浆一预定时间；
(5)于该氮化硅层上沉积一硼硅玻璃膜；
(6)利用该硼硅玻璃膜为硬屏蔽，于该基底中干蚀刻出一深沟渠。
11、根据权利要求10所述的方法，其特征是：该氮化硅膜是利用低压化学气相沉积法、电浆辅助气相沉积法或高密度电浆气相沉积法形成。
12、根据权利要求10所述的方法，其特征是：该氮化硅膜的厚度介于1000-2000埃之间。
13、根据权利要求10所述的方法，其特征是：该硼硅玻璃膜的硼浓度介于5-8wt％之间。
14、根据权利要求10所述的方法，其特征是：该硼硅玻璃膜的硼浓度为5.53wt％。
15、根据权利要求10所述的方法，其特征是：该硼硅玻璃膜的厚度介于7.5k-15k埃之间。
16、根据权利要求10所述的方法，其特征是：该含氧电浆是臭氧及氧气的混合气体电浆，采用浓度介于2-50wt％的臭氧/氧气混合气体，在高频无线电波频率为1-9w/cm2条件下形成。
17、根据权利要求10所述的方法，其特征是：该含氧电浆是下列之一所构成：臭氧及氧气的混合气体电浆、氧气电浆、一氧化氮电浆、氧化亚氮(N2O)电浆或臭氧混合其它惰性气体电浆。
18、根据权利要求10所述的方法，其特征是：该预定时间介于5秒-20分钟之间。
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| US10/063,896 US6861104B2 (en) | 2002-05-22 | 2002-05-22 | Method of enhancing adhesion strength of BSG film to silicon nitride film |
| US10/063,896 | 2002-05-22 |
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|---|---|---|---|---|
| CN101004559B (zh) * | 2006-12-21 | 2012-01-11 | 上海集成电路研发中心有限公司 | 一种增强光刻工艺中图形黏附力的方法 |
| CN102569180A (zh) * | 2012-02-10 | 2012-07-11 | 上海宏力半导体制造有限公司 | 功率mos接触孔的制造方法 |
| CN103515284A (zh) * | 2012-06-27 | 2014-01-15 | 南亚科技股份有限公司 | 沟槽隔离结构及其制造方法 |
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| KR100472006B1 (ko) * | 2002-10-09 | 2005-03-10 | 동부아남반도체 주식회사 | 모스 트랜지스터 제조 방법 |
| US7927933B2 (en) * | 2005-02-16 | 2011-04-19 | Imec | Method to enhance the initiation of film growth |
| CN103594389B (zh) * | 2012-08-13 | 2017-03-01 | 南亚科技股份有限公司 | 在基板中形成沟槽的方法 |
| CN110875396B (zh) * | 2018-08-31 | 2023-08-15 | 力智电子股份有限公司 | 沟槽式栅极金氧半场效晶体管及其制造方法 |
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| US4330569A (en) * | 1979-05-25 | 1982-05-18 | Ncr Corporation | Method for conditioning nitride surface |
| US5108843A (en) * | 1988-11-30 | 1992-04-28 | Ricoh Company, Ltd. | Thin film semiconductor and process for producing the same |
| JPH08228011A (ja) * | 1994-12-14 | 1996-09-03 | Toshiba Corp | 半導体装置およびその製造方法 |
| US6323139B1 (en) * | 1995-12-04 | 2001-11-27 | Micron Technology, Inc. | Semiconductor processing methods of forming photoresist over silicon nitride materials |
| JP3384714B2 (ja) * | 1997-07-16 | 2003-03-10 | 富士通株式会社 | 半導体装置およびその製造方法 |
| US6159862A (en) * | 1997-12-27 | 2000-12-12 | Tokyo Electron Ltd. | Semiconductor processing method and system using C5 F8 |
| WO1999067817A1 (en) * | 1998-06-22 | 1999-12-29 | Applied Materials, Inc. | Silicon trench etching using silicon-containing precursors to reduce or avoid mask erosion |
| US6303466B1 (en) * | 1999-03-19 | 2001-10-16 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device |
| US6291146B1 (en) | 1999-04-09 | 2001-09-18 | Industrial Technology Research Institute | Method for reforming a reflection-type light diffuser |
| US6319814B1 (en) * | 1999-10-12 | 2001-11-20 | United Microelectronics Corp. | Method of fabricating dual damascene |
| KR100363643B1 (ko) | 2000-04-07 | 2002-12-05 | 아남반도체 주식회사 | 반도체 소자의 금속전 절연막 제조 방법 |
| DE10120053A1 (de) * | 2001-04-24 | 2002-11-14 | Infineon Technologies Ag | Stressreduziertes Schichtsystem |
| KR100428806B1 (ko) * | 2001-07-03 | 2004-04-28 | 삼성전자주식회사 | 트렌치 소자분리 구조체 및 그 형성 방법 |
| US6521300B1 (en) * | 2001-08-16 | 2003-02-18 | United Microelectronics Corp. | Method of a surface treatment in improving adhesion of an organic polymeric low-k dielectric layer |
| JP4108310B2 (ja) * | 2001-09-28 | 2008-06-25 | 富士通株式会社 | シリコン含有絶縁膜を有する半導体装置の製造方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101004559B (zh) * | 2006-12-21 | 2012-01-11 | 上海集成电路研发中心有限公司 | 一种增强光刻工艺中图形黏附力的方法 |
| CN102569180A (zh) * | 2012-02-10 | 2012-07-11 | 上海宏力半导体制造有限公司 | 功率mos接触孔的制造方法 |
| CN103515284A (zh) * | 2012-06-27 | 2014-01-15 | 南亚科技股份有限公司 | 沟槽隔离结构及其制造方法 |
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| US20030219993A1 (en) | 2003-11-27 |
| CN1210770C (zh) | 2005-07-13 |
| US6861104B2 (en) | 2005-03-01 |
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