CN1440321A - Pneumatic diaphragm head having independent retaining ring and multi-region pressure control, and method to use the same - Google Patents
Pneumatic diaphragm head having independent retaining ring and multi-region pressure control, and method to use the same Download PDFInfo
- Publication number
- CN1440321A CN1440321A CN01812171A CN01812171A CN1440321A CN 1440321 A CN1440321 A CN 1440321A CN 01812171 A CN01812171 A CN 01812171A CN 01812171 A CN01812171 A CN 01812171A CN 1440321 A CN1440321 A CN 1440321A
- Authority
- CN
- China
- Prior art keywords
- pressure
- substrate
- diaphragm
- chamber
- frame plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 95
- 238000005498 polishing Methods 0.000 claims abstract description 283
- 239000000758 substrate Substances 0.000 claims abstract description 268
- 238000003825 pressing Methods 0.000 claims abstract description 84
- 230000002093 peripheral effect Effects 0.000 claims abstract description 15
- 239000012528 membrane Substances 0.000 claims abstract description 9
- 239000012530 fluid Substances 0.000 claims description 123
- 239000000463 material Substances 0.000 claims description 82
- 230000033001 locomotion Effects 0.000 claims description 43
- 239000004065 semiconductor Substances 0.000 claims description 39
- 230000001105 regulatory effect Effects 0.000 claims description 27
- 230000008859 change Effects 0.000 claims description 26
- 230000008569 process Effects 0.000 claims description 23
- 230000009467 reduction Effects 0.000 claims description 15
- 230000002787 reinforcement Effects 0.000 claims description 15
- 230000007704 transition Effects 0.000 claims description 15
- 229920001971 elastomer Polymers 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 229920002943 EPDM rubber Polymers 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 229920000181 Ethylene propylene rubber Polymers 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 3
- 238000011900 installation process Methods 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 239000013536 elastomeric material Substances 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 abstract 3
- 238000010586 diagram Methods 0.000 description 27
- 230000000694 effects Effects 0.000 description 19
- 238000010276 construction Methods 0.000 description 15
- 238000012545 processing Methods 0.000 description 14
- 238000007634 remodeling Methods 0.000 description 13
- 239000000725 suspension Substances 0.000 description 10
- 239000002775 capsule Substances 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- 238000007517 polishing process Methods 0.000 description 7
- 241000237983 Trochidae Species 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000012856 packing Methods 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 230000001771 impaired effect Effects 0.000 description 5
- 238000009434 installation Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 102100024513 F-box only protein 6 Human genes 0.000 description 3
- 101001052796 Homo sapiens F-box only protein 6 Proteins 0.000 description 3
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 244000309464 bull Species 0.000 description 3
- 230000001143 conditioned effect Effects 0.000 description 3
- 210000000056 organ Anatomy 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000008719 thickening Effects 0.000 description 3
- 101000824158 Homo sapiens F-box only protein 2 Proteins 0.000 description 2
- 101000917550 Homo sapiens Probable fibrosin-1 Proteins 0.000 description 2
- 241000150100 Margo Species 0.000 description 2
- 102100029532 Probable fibrosin-1 Human genes 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000001574 biopsy Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003550 marker Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 210000001138 tear Anatomy 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 101100028789 Arabidopsis thaliana PBS1 gene Proteins 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000012858 resilient material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
An apparatus and method for planarizing a substrate are provided. The apparatus includes a carrier having: a plate for receiving the substrate thereon; a first chamber for forcing the plate in a predetermined direction; a spacer coupled to an outer edge of the plate; a membrane coupled to the plate via the spacer and separated from the plate by a thickness of the spacer; and a second chamber defined between the membrane and the plate for forcing the membrane in another predetermined direction. The method involves pressing a peripheral edge of the substrate against a polishing pad with a first pressure, and pressing an interior of the substrate against the pad with a second pressure.
Description
Technical field
Present invention relates in general to the polishing of semiconductor wafer and complanation system, apparatus and method, particularly relate to and adopted the multiple plane pressure span so that on whole semiconductor wafer, obtain system, the apparatus and method of the high-grade complanation uniformity.
Background technology
Along with the technology feature sizes on semiconductor chip or the wafer reduces, density increases and wafer size increases, the demand of chemical-mechanical planarization (CMP) technology is become more urgent.From make the angle of semiconductor article with low cost, processing uniformity between the different chips and wafer inner plane uniformity have constituted important factor in order.Along with the size increase of chip or wafer, the flaw of small size may cause relatively large circuit to become waste product, therefore, and in semi-conductor industry, even very little flaw also can cause relatively large economic loss.
In the prior art, known have multiple reason can cause non-uniformity problem.These reasons comprise: the inhomogeneous deposition of heterogeneity edge effect, metal and/or the oxide layer that be applied to wafer backside pressure on the wafer in the surface polishing process, causes because of polishing pad in Waffer edge place and the typical effect difference that occurs at middle section etc., described inhomogeneous deposition preferably can be compensated by regulating the metal removal profile in the wafer plane process.Up to now, still do not achieve success for addressing these problems the effort of being done simultaneously.
Based on the essential requirement of wafer backside polish pressure, adopt the hard rubbing head of supporting usually.In the machine of many up-to-date generations, abaculus be located at support (or carriage) surface and wafer or other on-chip will be polished or the surface of complanation between, to attempt in hard support rubbing head system, providing certain flexibility.The so-called wafer abaculus of this abaculus.These abaculus regular meetings cause problem, because they often cause the process deviation, thereby cause occurring between the substrates of different deviation.This deviation is non-constant, and normally can not judge.A factor that causes this deviation is after in use having passed through certain life-span the amount difference that wafer is adsorbed by abaculus to take place.By wafer was immersed in the water, can improve the uniformity in the processing before using.This way can cause using early stage and use the later stage more close, however, still finds to exist unacceptable process deviation.By with abaculus preset in water as previously mentioned, and can change abaculus before the received limit to exceeding in the characteristic variations of abaculus, can be in limited range with described process Deviation Control.
When using abaculus, also need accurately to control the whole surface of the carriage that is used to connect abaculus, because any unevenness, flaw or flatness or parallel misalignment that should the surface all can cause the spanning substrate surface complanation deviation to occur.As example, in traditional rubbing head, at first to produce aluminium or ceramic wafer, to grind and polish it afterwards, attach it on the rubbing head again.This preparation method has increased the cost of rubbing head and machine, particularly when being provided with a plurality of rubbing head.
Because the physical dimension (technology feature sizes) on the surface of semiconductor chip becomes more and more littler, generally about below 0.2 micron, therefore relevant with nonuniform planeization problem gets more and more now.This problem is called inhomogeneities (WIWNU) problem in the wafer sometimes.
For so-called hard support planarization process head, just utilize hard surface by the processing head that is pressed in the semiconductor wafer dorsal part, the front surface of wafer may not conform to polishing pad, thereby can produce the complanation non-uniformity problem.This hard support processing head will adopt very high polish pressure (for example at the about 6psi pressure to the about 8psi scope) usually, and this higher relatively pressure can make wafer distortion effectively, to meet the pad interface shape.After this wafer distortion occurred, ledge was polished with recessed portion, and with acquisition whole uniformity to a certain degree, but actual result is that the complanation effect is relatively poor.That is to say that the magnetic track in some zone on the wafer has been removed too many material, some zone is then removed very little.Under the situation that quantity of material is removed too much, chip just can not use.
On the other hand, when use has the rubbing head of abaculus, wafer is pressed against on the polishing pad, but because the soft material in the abaculus can not cause wafer distortion, therefore can adopt lower polish pressure, and because of being out of shape the less wafer front uniformity that obtains, thereby can obtain whole polishing uniformity and good complanation effect simultaneously.Because the similar chip structure feature on the wafer is polished to essentially identical degree, therefore can obtain the good complanation uniformity at least in part.
Though someone once attempted utilizing soft support CMP rubbing head, did not all achieve satisfactory results.In some soft support rubbing head structures, one deck covers pressure air on the whole back surface of wafer and is used at polishing process wafer by being pressed in polishing pad.Regrettably,, can not independent regulation be applied to pressure or power on Waffer edge and the more close middle section, to solve the Waffer edge non-uniformity problem though this method can provide soft support rubbing head.
For the correction and the compensation of edge polishing effect, the someone attempts to be arranged in the shape of wafer spacing ring on every side and/or to revise spacing ring compression by adjusting, to regulate near the material removal amount of wafer spacing ring.Usually, edge polishing effect or edge effect will cause too much material to be removed from Waffer edge, that is to say that Waffer edge is by excessive polishing.In order to proofread and correct this excessive polishing, usually to regulate spacing ring pressure higher than wafer backside pressure, so that the limited ring compression of the polishing pad part in should the zone to a certain degree, thereby make several millimeters less of the material removal amounts of the wafer part the spacing ring zone in.Yet, promptly be that these trials can not be entirely satisfactory, because the complanation pressure on the wafer neighboring can only be according to spacing ring pressure and indirect regulation.Usually, can not expand the effect of spacing ring in distance Waffer edge coverage arbitrarily.In addition, can not independent regulation spacing ring pressure, rim pressure or wafer backside total pressure be with the result that realizes ideal.
For regulating this ideal style of non-homogeneous deposition of load wafer by regulating material removal profile, almost nobody have ever made the trial of this compensation of any realization.
Therefore, still need to provide a kind of so soft support CMP rubbing head at present, it can obtain excellent complanation result, and can regulate wafer material and remove profile, with the inhomogeneous deposition of compensation such as the structure sheaf on the semiconductor chips such as wafer.
Summary of the invention
The invention provides a kind of rubbing head and a kind of burnishing device, machine or instrument (CMP instrument), be used for the surface of substrate or other workpiece is polished or complanation.Described device comprises rotatable polishing pad and wafer carrier, and described wafer carrier comprises: substrate or wafer holding portion, and it is used to hold substrate and substrate is abutted against the polishing pad location; And wafer pressing piece, it comprises first pressing piece and second pressing piece, described first pressing piece abuts against described polishing pad and applies first load pressure to the marginal portion of described wafer, described second pressing piece abuts against described polishing pad and applies second load pressure to the middle body of described wafer, and wherein said first and second load pressures differ from one another.Although wafer carrier and wafer pressing piece can separately use, in a preferred embodiment of the invention, burnishing device also comprises: spacing ring, and it is around described wafer carrier; And the spacing ring pressing piece, it abuts against described polishing pad and apply the 3rd load pressure on described spacing ring.First, second and the 3rd load pressure can be regulated independently of one another.
In yet another aspect, the invention provides a kind of method to disc semiconductor wafer or other substrate planeization.This method may further comprise the steps: will press against round the spacing ring of described wafer on the polishing pad with first pressure; Press against on the described polishing pad with the first neighboring part of second pressure described wafer; And second inside part that is positioned at part inboard, neighboring on the described wafer is pressed against on the described polishing pad with the 3rd pressure.In yet another aspect, described second pressure can be by dividing the mechanical parts that contacts to apply with described peripheral edge portion; And described the 3rd pressure is the Pneumatic pressure that is applied to described wafer backside.Desirable mode is that Pneumatic pressure applies by flexible sheet, perhaps by applying at least a portion that gas is directly pressed against described wafer backside surface.
In yet another aspect, the present invention also provides a kind of carriage of the CMP of being used for device, and it comprises: plate, and it has outer surface; First pressure chamber, it is used to apply power, so that described plate is promoted along predetermined direction; Pad, it is connecting the neighboring of described plate; Diaphragm, it is connecting described plate by described pad, and with described plate between across the thickness of described pad; And second pressure chamber, it is formed between described diaphragm and the described plate surface, applying second power, thereby pushes described diaphragm along the 3rd predetermined direction.
In yet another aspect, the invention provides a kind of support that is used in the substrate burnishing device, it comprises: housing; Spacing ring, it is flexibly connecting described housing; First pressure chamber, it is used to apply first power, so that described spacing ring is promoted with respect to described housing along first predetermined direction; Carrier frame plate, it has outer surface, and is flexibly connecting described housing; Second pressure chamber, it is used to apply second power, so that described spacing ring is promoted with respect to described housing along second predetermined direction; Described spacing ring is around the part of described carrier frame plate, and limits a circular groove; Pad, it is connecting the neighboring of described carrier frame plate outer surface in described spacing ring circular groove; Diaphragm, it is connecting described carrier frame plate by described pad, and is arranged in the described circular groove, between described diaphragm and the described carrier frame plate outer surface across the thickness of described pad; And the 3rd pressure chamber, it is formed between described diaphragm and the described carrier frame plate outer surface, is used to apply the 3rd power, so that described spacing ring is promoted with respect to described housing along the 3rd predetermined direction.
The present invention also comprises a kind of substrate, semiconductor wafer for example, and it is by the method according to this invention processing or make.
Description of drawings
Fig. 1 is the schematic diagram of a kind of representational bull CMP polishing machine or complanation machine.
Fig. 2 (prior art) is a kind of schematic diagram of traditional C MP processing head.
Fig. 3 is the schematic diagram of embodiment that comprises the soft support CMP rubbing head of the diaphragm that has the sealing load chamber, and wherein Fig. 3 A shows the embodiment of the diaphragm support plate that uses band pressure chamber groove; Fig. 3 B shows the embodiment that uses the annular corner assembly; Fig. 3 C shows the thickening neighboring part of use diaphragm to transmit the embodiment of polishing force.
Fig. 4 is the schematic diagram of embodiment that comprises the CMP rubbing head of the diaphragm that has eyelet.
Fig. 5 is the schematic diagram of embodiment that comprises the CMP rubbing head of the diaphragm that has eyelet and trough of belt support plate.
Fig. 6 comprises the diaphragm that has eyelet and the schematic diagram of the embodiment of the CMP rubbing head of the air cushion of the wafer surface of flowing through.
Fig. 7 is the schematic diagram of embodiment that comprises the CMP rubbing head of double containment pressure chamber, and wherein Fig. 7 A shows the embodiment of the CMP rubbing head that uses the diaphragm that has the double containment pressure chamber; Fig. 7 B shows a spacing ring and a carriage among the CMP rubbing head embodiment, and not shown other parts.
Fig. 8 is the schematic diagram of the embodiment of a CMP rubbing head, and it has diaphragm seal chamber and a pipe shape pressure rings that is used for adding different pressures on certain part of diaphragm and wafer.
Fig. 9 is the schematic diagram of the embodiment of a CMP rubbing head, and it has diaphragm seal chamber and a plurality of pipe shape pressure rings that is used for adding different pressures on a plurality of zones of diaphragm and wafer.
Figure 10 is the schematic diagram that comprises the rubbing head preferred embodiment in diaphragm and sealing load chamber of the present invention.
Figure 11 is a schematic diagram of using the embodiment of spacing ring suspender in the embodiment shown in fig. 10.
Figure 12 is the schematic diagram that can transmit the embodiment of part with substituting moment in the embodiment shown in fig. 10.
Figure 13 is the schematic diagram of the details of CMP rubbing head shown in Figure 10, shows the connection situation of carriage assembly in the rubbing head that assembles.
Figure 14 is the schematic diagram of the embodiment of carriage assembly suspender.
Figure 15 is the schematic diagram of the embodiment of wafer backside diaphragm.
Figure 16 is the schematic diagram of a substituting preferred embodiment of rubbing head of the present invention, comprises diaphragm that has eyelet and the carriage that has conical cavity in this rubbing head.
Figure 17 is the schematic diagram that can be used in the embodiment of the diaphragm support plate in embodiment illustrated in fig. 16.
Figure 18 is the perspective schematic view of diaphragm support plate shown in Figure 17.
Figure 19 is the schematic diagram of the embodiment of the rubbing head that comprises inner chamber and exocoel of the present invention.
Figure 20 is the schematic diagram of an embodiment of rubbing head of the present invention, and this rubbing head is similar to embodiment illustrated in fig. 19, but two diaphragms do not have mutual superposition, and outer latallae adopts the form of opening annulus.
Figure 21 is the schematic diagram of an embodiment of rubbing head of the present invention, and this rubbing head is similar to embodiment illustrated in fig. 19, but two diaphragms do not have mutual superposition.
Figure 22 is the schematic diagram of an embodiment of rubbing head of the present invention, and this rubbing head is similar to embodiment illustrated in fig. 21, but exocoel comprise or formed inflatable in the pipe or capsule.
Figure 23 is the schematic diagram of an embodiment of rubbing head of the present invention, and wherein exocoel comprises an exterior annular chamber.
Figure 24 is the schematic diagram of an embodiment of rubbing head of the present invention, and wherein comprising can be simultaneously and control the structure and the method in five zones substantially independently.
Figure 25 is the schematic diagram of the embodiment of two diaphragm rubbing heads, the form of wherein outer latallae employing opening annulus, and also the pressure that is applied on the medial margin shape diaphragm can change, and is applied in the area in the substrate center zone of power with change.
Figure 26 is and the schematic diagram of the embodiment of similar pair of diaphragm rubbing head shown in Figure 25 that wherein outer latallae adopts the form of the circular film that surrounds inboard diaphragm.
Figure 27 is the schematic diagram of embodiment of rubbing head that comprises the outer latallae of closed circle form, and the pressure that wherein is applied on the diaphragm can change, and is applied in the area in the substrate center zone of power with change.
The specific embodiment
Below in conjunction with the particular representative embodiment that shows in the accompanying drawing structure of the present invention and method are described.Structure of the present invention and method can be eliminated in many and traditional rubbing head structure and use the relevant problem of polymer abaculus between wafer backside and wafer carrier, and with soft support rubbing head in wafer surface on the relevant problem of pressure distribution.Different power or pressure will abut against polishing pad and apply different loads to the wafer front side surface, thereby cause different material removing rates.The pressure that is applied on the spacing ring also changes the load force of the spacing ring contact-making surface relative with spacing ring similarly, thereby influences the material removing rate of Waffer edge.Structure of the present invention and method replace with flexible membrane or film with abaculus, and it adjoins wafer backside surface and settles.In one embodiment, described diaphragm has formed sealed cavity, and in second embodiment, described diaphragm has opening or eyelet, so that pressure is applied directly on the wafer backside surface at least in part.Use this dorsal part pressure release surface pressure chamber, perhaps cooperate and guide pressure into wafer backside surface, can also under low pressure implement polishing, thereby realize the uniformity in the higher wafer with other elements in the rubbing head of the present invention.Closed inner chamber embodiment and opening embodiment will describe in detail below.
Rubbing head of the present invention can also be controlled the material removal amount of Waffer edge with respect near the material removal amount the wafer central authorities separately, thereby can control the edge uniformity.This control realizes by in rubbing head three kinds of pressure independent of each other basically being controlled, these pressure are: the wafer backside pressure that (i) is applied to the wafer middle body, (ii) be applied to the poppet pressure of wafer backside edge, (iii) at the spacing ring pressure that in the annular region of wafer, is applied directly on the polishing pad.
In the structure of Miao Shuing, spacing ring is suspended on the housing by flexible material below, thereby can vertically move, and little friction and can not suffering restraints.Be provided with certain interval between the adjacent mechanical organ so that spacing ring can be suspended on the pad interface by this way, promptly can be adapted to polish or planarization operation in less angular oscillation.Carriage is suspended on the housing by flexible material equally, thereby can vertically move, and little friction and can not suffering restraints.The same with spacing ring, be provided with little mechanical clearance between the adjacent mechanical organ, thereby make carriage to be suspended in by this way on the pad interface, promptly can be adapted to polish or planarization operation in less angular oscillation.Wafer only contacts carriage by the diaphragm connector near the wafer neighboring.Only pneumatic or hydraulic pressure cushion chamber contacts carriage to the middle body that is arranged in inboard, wafer neighboring on the wafer by flexible membrane or film and air or other in polishing or planarization.Except being suspended on spacing ring and carriage on the housing, housing itself connects or is suspended on other elements of complanation machine.Usually, this connection or suspension realize by pneumatic, machinery or hydraulic motion device.For example, cylinder can be used to provide this motion, and this is known in the field.This connection makes rubbing head vertically to move up and down with respect to pad interface on the whole, thereby can before polishing wafer be placed on the carriage, and takes off from carriage after polishing is finished.Robot is generally used for realizing this purpose.
In one embodiment of the invention, be provided with downside rigidity physics block in the lifting of rubbing head and the reduction mechanism, it can be conditioned with wearing and tearing of compensation polishing pad and spacing ring wearing and tearing.In order to realize the compensation of polishing pad wearing and tearing and/or spacing ring wearing and tearing, not with respect to vertically moving or stroke in the certain limit of housing by means of carriage or spacing ring, but regulate rubbing head generally with respect to the position of polishing pad, this mode is desirable, because spacing ring and carriage can be maintained like this its range of movement the center or near, thereby make rubbing head is operated the possibility that causes and do not wished that the mechanical influence that occurs minimizes, and improve or stablize the uniformity of living process.This mechanical influence may comprise, for example increase of slidingsurface and associated friction force or reduce, and the characteristic that flexibly connects between housing and the spacing ring or between housing and the carriage changes, and the mechanical influence because of causing such as assembling or calibration flaw etc.Fundamentally say, by always the rubbing head assembly being positioned so that the important operation element in the rubbing head (for example spacing ring, carriage, dorsal part diaphragm) be positioned at the precalculated position or near, can reduce any negative effect that may impact process.
Thisly control the measure of rubbing head assembly by being provided with, can use the polishing pad of all thickness for a long time, and use initial thicker polishing pad expection can make polishing pad obtain long service life with respect to polishing pad.Certainly, under certain conditions, may be after the wafer of predetermined quantity be polished or this thicker polishing pad is implemented the polishing pad reparation according to the current characteristic of polishing pad.
Usually, several millimeters adjusting can be to be adapted to the wearing and tearing of polishing pad and spacing ring.For example, the rubbing head position adjustments ability in the extremely about 20mm scope of common approximately 1mm is just enough, and about in typical case 2mm is just enough to the interior regulating power of about 8mm scope.These adjustings can realize by following manner: regulate by means of adjusting nut or screw, moving or the hydraulic actuator by means of transformation strength and regulating, regulate by rack and pinion assembly, regulate by ratchet mechanism or other mechanical adjustment modes well known in the art.Perhaps, can the use location encoder, surveying the below stop position of rubbing head, thereby when arriving this position, rubbing head utilize anchor clamps or other devices that it is clamped.Keep the stop position that detects though also can adopt some electric control gear, but in fact do not wish to adopt electric control gear, because they are easy to be subjected to the influence of noise and the vibration of mechanical keeper, this mechanical keeper may be in order to carry out accurate complanation to wafer or other substrates and to be provided with.
CMP rubbing head of the present invention and method of planarizing can be used in the CMP machine with single rubbing head, perhaps also can be used in the CMP machine with a plurality of rubbing heads, for example are used in combination with carousel.In addition, rubbing head of the present invention can be used in the CMP machine of form of ownership, comprise and use orbital motion polishing element, shuttling movement polishing element, straight line or move back and forth the polishing element and the machine of the aggregate motion polishing element of these polishing motions, also can be with in other CMP known in the art and the polishing machine.
A kind of chemically mechanical polishing or complanation (CMP) instrument 101 has been shown among Fig. 1, it comprises a carousel 102, and described carousel is carrying a plurality of rubbing head assemblies of being made up of rubbing head installation component 104 and substrate (wafer) carriage assembly 106 103.Term used herein: " polishing " both can refer to the substrate 113 that is made of semiconductor wafer or substrate is usually polished, and also can refer to the substrates such as semiconductor wafer that deposited component are implemented substrate planeization.The disk that semiconductor wafer normally approaches and has certain fragility, its nominal diameter is between 100mm and 300mm.What industrial quarters was used at present is the semiconductor wafer of 100mm, 200mm and 300mm.Project organization of the present invention can be applied in semiconductor wafer and other substrates that the diameter maximum is at least 300mm, and the substrate of larger diameter, and can be valuably any significant wafer surface polishing unevenness be limited in the so-called keep-out area of radial periphery of semiconductor wafer.Usually, described keep-out area is extremely approximately 5mm of about 1mm, and more common is that about 2mm is to about 3mm.
Base 105 is used to supporting other elements that comprise crane span structure 107, and described crane span structure 107 is supporting conveyer belt 102 and the rubbing head assembly 103 that is connected thereon in liftable mode.Installation component 104 is installed on the conveyer belt 102, each rubbing head assembly 103 is installed on the installation component 104 so that rotation, conveyer belt be mounted can be around conveyer belt central axis 108 rotation, and the rotation 111 of each rubbing head assembly 103 is arranged essentially parallel to conveyer belt central axis 108 respectively but is separated by with it.CMP instrument or machine 101 also comprise motor-driven platen 109, and it is mounted to such an extent that can rotate around platen driving axis 110.Platen 109 is keeping polishing pad 135, and is being driven by platen motor (not shown) and to rotate.This specific embodiment of CMP instrument 101 is the bull structure, and promptly each conveyer belt 102 has a plurality of rubbing heads 103; Yet single head formula CMP instrument also is known, and CMP rubbing head of the present invention and finishing method both can be used in the bull polissoir, also can be used in the single head polissoir.
In addition, in this specific CMP structure, a plurality of rubbing heads 103 are to be driven by single rubbing head motor (not shown), driving-chain (not shown) of described motor-driven, and described driving-chain drives each rubbing head 103 by chain and sprocket mechanism again conversely; Yet the present invention also can be applied in each rubbing head 103 respectively by among the embodiment of independent driven by motor rotation and/or the other types driving mechanism of employing except that chain and chain-wheel mechanism.Also adopted swivel joint in the CMP instrument of the present invention, it is provided with a plurality of different gas/fluid channels, with on the extraneous regular supply source that pressure fluid such as air, water, vacuum or analog is communicated in head and the head or among the position between.In one embodiment, be provided with five different gas/fluid channels in the swivel joint.In the embodiment that adopts band chamber carriage of the present invention, include additional swivel joint and import and export, so that to the additional required pressure fluid of chamber supply.
In operation, polishing platen 109 is with additional polishing pad 135 rotations thereon, and conveyer belt 102 rotates, and each rubbing head 103 rotates around their axis respectively.In an embodiment of CMP instrument of the present invention, the rotation 108 of conveyer belt 102 is with respect to about 1 inch of platen axis 110 biasings; Yet, be not all to need to adopt this biasing in all cases.In another embodiment, the rotary speed of each element be chosen such that be on each part and the substrate of wafer 113 other point is the same moves essentially identical distance with identical average speed so that substrate is polished or homogenising equably.Because polishing pad is normally compressible to a certain extent, therefore when wafer contacts polishing pad for the first time, interaction speed between polishing pad and the wafer and mode will influence the material removal amount on the Waffer edge to a great extent, and the uniformity of the influence wafer surface of having polished.
In order to embody the unusual part of CMP rubbing head of the present invention and the CMP method relevant with each embodiment that uses rubbing head, at first please referring to simplification with structure shown in Figure 2 typical traditional rubbing head.
In example shown in Figure 2, the different parts that the mechanical type helical spring is used to be illustrated in rubbing head applies different power.In fact, though also can use spring to implement the present invention in theory, the fluid pressure of air pressure or hydraulic pressure form is generally used for providing the better pressure uniformity to expected areas.Using spring in this figure mainly is in order more clearly to describe, to avoid that the present invention's quilt and nonessential traditional structure details are obscured.
Traditional C MP rubbing head 152 among Fig. 2 comprises top shell 204 and axle 206, and described axle is used for the remainder of housing and CMP rubbing head is connected to motor or other rotating power source well known in the art.Housing 204 comprises toroidal shell sidepiece 205 usually; it surrounds the remainder of rubbing head; be used for protecting remainder not contact polishing fluid, the protection inner member is subjected to unnecessary exposure and wearing and tearing, and is used as the mechanical guides of other inner members such as spacing ring 214.On the meaning of very having simplified, spacing ring 214 and carriage 212 can think to be suspended on the flat horizontal shell plates, and described shell plates has upper surface 208 that is connecting axle 206 and the lower surface 210 that is used to hang spacing ring 214 and carriage 212.
Carriage 212 is connecting housing 204 by axle 216, described axle 216 fixedly connected the upper surface 218 of carriage, and the sphere assembling spheroid 220 in the cylindrical hole 222 that is trapped in the lower surface 210 extends.Assembling spheroid 220 can vertically move in hole 222 or slide, and does relative to vertically moving together with housing 204 to guarantee them.Preferably the dimensioned with hole 222 gets more bigger, so that assembling spheroid 220 is unfettered when mobile, and can obtain certain motion regulated quantity, thereby when being provided with the combining structure in a plurality of assembling spheroids and hole, allow carriage to do certain angular movement or inclination with respect to housing 204 and polishing pad 226.Yet the cooperation between assembling spheroid and the hole should be enough tight, to prevent to damage because of overexercise or gap the precision of rubbing head.Assembling spheroid 220 provides the moment transmission to be connected between housing 204 and carriage 212, so that can be delivered on the wafer 230 that stands complanation by carriage 212 from rotatablely moving of axle 206.Although not shown in the drawings,, also can utilize the assembling spheroid in the spacing ring similarly and connect housing to prevent making ambiguous of the present invention because of undue complicated.
One or more springs 232 are arranged between the upper surface 234 of housing lower surface 210 and spacing ring 214, and are used for spacing ring 214 and top shell 204 are separated.Because the motion at polishing or planarization operation middle shell is restricted, therefore final result presses against spacing ring 214 downwards on the upper surface of polishing pad 226.In this certain embodiments, the quantity of the type of spring 232 or spring 232 can be regulated, so that desirable spacing ring power (FRR) or spacing ring pressure (PRR) to be provided.Yet if utilize fluid pressure that spacing ring is pressed against on the polishing pad 226, the fluid pressure that is applied to downwards on the spacing ring should be regulated, and presses against power on the polishing pad 226 downwards to obtain to make spacing ring 214.
In a kind of similar mode, one or more carriage springs 238 are arranged between the housing lower surface 210 and upper surface 218 of carriage 212, and are used for carriage being separated with housing and pushing carriage to polishing pad.In polishing operation, the motion of housing 208 is restricted, and therefore final result presses against carriage 212 downwards on the upper surface of polishing pad 226.Usually, independent cylinder is used to make rubbing head 152 to move with respect to polishing pad 226 and locatees.After this motion can be used, for example, in wafer or other substrates and is loaded for complanation with rubbing head location (reductions) to the position of approaching polishing pad, and after the complanation end, polishing pad 226 is left in the rubbing head lifting.Useful structure is, is provided with the electromechanical stop as motion lower limit benchmark, guaranteeing to obtain the repeatability of appropriateness, and avoids rubbing head or wafer impaired.
In this traditional embodiment, the lower surface of carriage is directly or by the back surface 244 that optional polymer abaculus 160 is installed semiconductor wafer 230.
Be appreciated that, traditional C MP rubbing head shown in Fig. 2 can provide by spacing ring 214 and be applied to spacing ring pressure (PRR) on the polishing pad 226, and is theoretic at the front surface of wafer 230 and the single even poppet pressure (PSC) between the pad interface at least.Those having ordinary skill in the art will appreciate that, wafer may bear differential pressure because of various factors on its whole surface, these factors comprise: with the rubbing head of rotation and relevant dynamic characteristic, polishing pad local pressure, polishing fluid distribution and other many factors of polishing pad of rotation.Those of ordinary skill in the art is further appreciated that as the explanation in this specification, uniform in-plane pressure may not can produce the uniform in-plane effect, and some controlled complanation pressure variation is desirable.Yet this control can not realize by CMP rubbing head or method of planarizing shown in Figure 2.
The invention provides several CMP rubbing head embodiment and a kind of innovation polishing and method of planarizing that is applicable to rubbing head of the present invention and other rubbing heads.The structure that is provided among each embodiment all can change complanation pressure at least two zones on the semiconductor wafer with controllable mode, and regulates spacing ring separately and act on pressure on the polishing pad downwards.The control of existing known spacing ring pressure can influence wafer and the interaction between the polishing pad at Waffer edge place, thereby influences the wafer plane local edge.This influence is worked indirectly, because the pressure of spacing ring can only expand to the limited distance in wafer below.
Three relevant embodiment of rubbing head of the present invention have been shown among Fig. 3, they each have a film respectively and be formed on carriage and film between the sealing load chamber.The embodiment that has roughly solid diaphragm support plate 26 has been shown among Fig. 3 A, and has illustrated among Fig. 3 B not with the embodiment of diaphragm support plate 26, wherein the power of carriage only is delivered on the diaphragm 250 from carrier frame plate 212 by bight annulus 260 at the outer surface place.Embodiment among Fig. 3 C is similar to the embodiment among Fig. 3 B, has just removed bight annulus 260, replaces the reinforcement 263 of diaphragm 250, to transmit carriage force.Should be pointed out that in certain embodiments diaphragm can be made by synthetic material, and/or bight annulus 260 or other structures can form one with the marginal portion of diaphragm.
Describe the structure of the embodiment of the originality CMP processing head among Fig. 3 A below in detail.The different parts that mechanical type helical spring 232,238 is used to be illustrated in rubbing head 202 applies different power.In fact, though also can use spring to implement the present invention in theory, can predict, the fluid pressure of air pressure or hydraulic pressure form can provide better complanation result usually, because this pressure can be evenly distributed in the expected areas; In addition, because pressure can come under observation, therefore unlike the mechanical type spring, need regularly replace or need frequently carry out maintainability and regulate.Using spring in illustrated embodiment mainly is in order more clearly to describe, to think that to avoid looking traditional structure and the present invention have no relation.
Rubbing head 202 among Fig. 3 comprises top shell 204 and axle 206, and described axle is used for the remainder of housing and rubbing head is connected to motor or other rotating power source well known in the art.Housing 204 comprises toroidal shell sidepiece or lateral margin 205 usually; it surrounds the remainder of rubbing head; be used for protecting remainder not contact polishing fluid, the protection inner member can not be subjected to unnecessary exposure and wearing and tearing, and is used as the mechanical guides of other inner members.Spacing ring 214 and carriage 212 are suspended on the level board of a formation housing generally, and described level board has upper surface 208 that is connecting axle 206 and the lower surface 210 that is used to hang spacing ring 214 and carriage 212.
One or more springs 232 are arranged between the upper surface 234 of housing lower surface 210 and spacing ring 214, and are used for spacing ring and top shell are separated, and spacing ring is pressed against on the polishing pad 226.Because the motion at polishing or planarization operation middle shell is restricted, therefore final result presses against spacing ring 214 downwards on the upper surface of polishing pad 226.In this certain embodiments, the quantity of the type of spring 232 and/or spring 232 can be regulated, so that desirable spacing ring power (FRR) or spacing ring pressure (PRR) to be provided.Yet if what use in a preferred embodiment is fluid pressure, the fluid pressure (directly or indirectly applying) that is applied to downwards on the spacing ring should be regulated, to obtain that spacing ring 214 is pressed against power on the polishing pad 226 downwards.
In a kind of similar mode, one or more carriage springs 238 are arranged between the housing lower surface 210 and upper surface 218 of carriage 212, and are used for carriage is separated with top shell 204.In polishing operation, the motion of housing 208 is restricted, and therefore final result presses against carriage 212 downwards on the upper surface of polishing pad 226.With directly different by the spacing ring 214 that is pressed on the polishing pad 226 at lower surface 240 places, carriage of the present invention does not directly contact polishing pad, and the even direct back surface 244 of contact wafer 230 in a preferred embodiment of the invention.On the contrary, contact realizes by a diaphragm, film or other flexible resilient materials in most of embodiment of the present invention, and local in other embodiments or realize by one deck pressure air or gas fully.
In structure of the present invention, carriage 212 is mainly used in and provides the stable platform in order to connection flexible membrane, film or barrier film 250.(see Fig. 3 B and 3C) in one embodiment, inner chamber 251 is formed on the lower surface 252 of carriage 218 and the inner surface of diaphragm 250 is between the upper surface 254.The opposite side surfaces of diaphragm 250 is the back surface 244 of outer surface contact wafer 230.(see Fig. 3 A) in another embodiment, inner chamber 251 is formed between the inner surface 254 of the lower surface of diaphragm support plate 261 and diaphragm 250.Be used to provide the compressed air of power (FBS) or pressure (PBS) and vacuum or gas supply source directly or pass through swivel joint and be connected fitting 267, and connecting inner chamber 251 by pipe, body or other conduits in the rubbing head surface.
In alternate embodiment shown in Figure 4, diaphragm is only local to be covered or extends through wafer backside surface 244, and an eyelet 265 or other openings are located in the diaphragm 250.In this substituting embodiment, do not form inner chamber in the structure of rubbing head itself, on the contrary, only on rubbing head so that during polishing, just understand and on wafer backside surface 244, set up back side pressure (PBS) in wafer 230 or other substrate load (being installed).
In another alternate embodiment shown in Figure 6, the air 280 or other gas that flow to the certain volume of wafer backside surface can be regulated by eyelet, so that air leaks out between diaphragm 250 and wafer backside surface, thereby wafer is suspended on the air cushion that air 280 forms.
Return embodiment shown in Figure 3 now, structure of the present invention allows diaphragm outer surface 256 like this by being pressed on the wafer backside surface 244, and promptly middle body 281 has different pressure (seeing Fig. 3 A) with respect to marginal portion 282.In the embodiment shown in Fig. 3 B, circle or annular angle parts 260 be arranged on the neighboring 262 of wafer or near.Although extending, the part of diaphragm 250 covers on the corner assembly 260 so that provide continuous basically diaphragm just to the wafer contact area, but corner assembly 260 should be made by hard a little material, at least some component of carriage force (FSC) or poppet pressure (PSC) is delivered on the wafer backside surface 256 enabling.As example, corner assembly 260 can be made by incompressible or incompressible basically material such as metal, hard polymeric material or similar material; Perhaps make by compressible or elastomeric material such as flexible plastic, rubber, silicone or similar material.Property structure as an alternative, corner assembly 260 can adopt the form of the tubulose utricule that is holding air, gas, fluid, gel or other materials, and can have fixing volume and pressure, the mechanism that perhaps can connect the volume and/or the pressure that are used to change air, gas, fluid, gel or other materials, thereby can regulate hardness, compressibility and similar performance, to be adapted to specific planarization.The characteristic of corner assembly 260 can determine to have on the back surface 244 that great carriage force (FSC) is delivered to wafer 230 to a great extent.The purpose that this corner assembly 260 is set is that independent adjusting is applied to polish pressure on the neighboring 262 of wafer 230 for the polish pressure that is applied to all the other positions of wafer, thereby can control the removal and the edge effect of material.
Should be understood that, even what corner assembly 260 adopted is incompressible basically material, some parts on the diaphragm 250 in fact also can present certain compressibility and elasticity, and this helps the edge transition phenomenon is minimized---and this phenomenon may appear at the boundary between corner assembly and the wafer inside part.The thickness of diaphragm 250 can be selected like this, promptly can provide desirable firm degree and elasticity.Different processing procedures can be benefited because of different characteristics.Have rectangular cross section although should also be noted that the corner assembly 260 shown in the embodiment among Fig. 3 B, described cross section can change wedge shape or circular into, so that the transition smoothly of surface profile and pressure.
In the embodiment shown in Fig. 3 A, diaphragm support plate 261 can provide the corner assembly functional characteristic that is positioned at 283 places, wafer 230 neighborings, can also provide additional supporting role to the wafer that remains on by vacuum power on the rubbing head 202.Diaphragm support plate 261 can limit wafer and bloat amount of bow when being held and be installed, and prevents to be formed on magnetic track or other structure breakings on the wafer front side surface 245.
Fluid pressure (for example air pressure) is applied to the below (seeing Fig. 3 A) of diaphragm support plate 261, perhaps is applied between carriage lower surface 264 and the diaphragm upper surface 254 and (sees Fig. 3 B and 3C), thereby apply downward power by diaphragm 250 to wafer backside surface 244.In one embodiment of the invention, the downward power (FBS) that is applied to wafer backside is produced by fluid pressure, described fluid pressure is through via hole, eyelet, body, conduit, pipe or other passages 272, and leads to the ambient pressure source through fitting 267 or swivel joint.In the embodiment shown in Fig. 3 B, back side pressure is evenly distributed on the wafer surface in the inboard of annular angle parts 260, in the embodiment shown in Fig. 3 C, back side pressure is evenly distributed on the wafer surface in the inboard of thickening diaphragm portion 263, and having shown in Fig. 3 A among the embodiment of diaphragm support plate, be evenly distributed on the wafer surface in the inner chamber 251 of back side pressure between lower recess 279 that is formed at diaphragm support plate 261 and diaphragm upper surface 254.
Be appreciated that, owing to have effective mechanical connection between the annular section 285 on carriage lower surface 252 and the diaphragm 250, therefore wafer 230 will be subjected to the caused pressure of poppet pressure (PSC) near its neighboring 283, and described annular section 285 contacts and edge exhibition stride across the neighboring part of bight annulus spare 260 or diaphragm support plate.Should be pointed out that the groove 279 that has formed indent on the lower surface of diaphragm support plate 261, so diaphragm support plate 261 can not transmit the mechanical force from carriage.The pressure that causes because of back side pressure (PBS) is applied to wafer 23 centers and spreads towards the edge.In the zone at the edge of the annular groove of internal diameter that is adjacent to corner assembly 260 or diaphragm support plate 261, usually certain transition can appear between these two kinds of pressure (PSC and PBS).
Generally speaking, the polish pressure of wafer neighboring can be adjusted to the polish pressure that is higher than, is less than or equal to wafer backside central authorities.In addition, spacing ring pressure (PRR) also can be higher than, be less than or equal to wafer central authorities' polish pressure or neighboring polish pressure substantially.In one particular embodiment of the present invention, spacing ring pressure is usually located in about scope of 5 to about 6psi, be more typically about 5.5psi, poppet pressure is usually located in about scope of 3 to about 4psi, be more typically about 3.5psi, wafer backside pressure is usually located in about scope of 4.5 to about 5.5psi, is more typically about 5psi.Yet these pressure limits are exemplary, and any described pressure all can be regulated in about scope of 2 to about 8psi, with the polishing or the complanation effect of realizing ideal.In some embodiments of the invention, the physical weight of mechanical organ, for example the weight of the weight of spacing ring and carriage assembly can be contributed certain effective pressure.
An alternate embodiment of the present invention is shown among Fig. 3 C.In this alternate embodiment, corner assembly 260 is cancelled, and replaces the reinforcement of diaphragm 250, and described reinforcement can be used as bight annulus or corner assembly.The material behavior of diaphragm and the thickness of described reinforcement (t) and width (w) will determine to a great extent that carriage force spreads to the ratio on the wafer backside surface.Equally, though the cross section of diaphragm reinforcement is a rectangle in the embodiment shown in Fig. 3 C, reinforcement also can adopt many other useful transverse shape or profiles, to provide desirable carriage force value and distribution.By selected shape aptly, power can begin from the neighboring anisotropically to distribute in the function mode of radial distance, with the material removal effect of realizing ideal.Considering under the situation of cost and other factors, even can change and begin the material property (particularly the zone of thickened wall portion 263) that the function mode with radial distance occurs from the center, transmitting performance to realize the different power that thickened wall portion is transmitted.
In the embodiment shown in fig. 3, (and among other each embodiment that describe below), the quilt on the wafer 230 directly or the zone that has directly applied power basically can in quite wide scope, regulate.As example, 262 distance is typically about 1mm to about 30mm apart from the neighboring for diaphragm support plate material and/or diaphragm support plate groove 279 (Fig. 3 A), corner assembly (Fig. 3 B) or diaphragm reinforcement, be more typically about 2mm to about 15mm, most typical is that about 2mm is to about 10mm.Yet generally speaking, the width or the extension of groove, corner assembly or diaphragm reinforcement should depend on the processing result of expection, and can not definitely be confined to specific physical distance.These sizes preferably in process of the test rule of thumb and the wafer process parameter of being set up and determining.At a kind of CMP machine embodiment that is used for processing the 200mm wafer, the diameter of groove is about 198mm, and in another embodiment, the diameter of groove is about 180mm.In general, required size depends on particular machines and/or procedure, promptly rule of thumb determines in the debug process of the development of machine and design process and CMP program.
At last, although should be pointed out that in the illustrated embodiment with spring as the power producing component or be used to produce the device of spacing ring power (FRR) and carriage force (FSC), should be appreciated that common meeting do not use spring for a lot of reasons.For example, for providing the spring performance of coupling, a large amount of springs may have problem in actual applications, particularly when primary products has used some months or needed to change spring after several years.In addition, spring structure needs physical connection housing, spacing ring and carriage, so the sports independence of these elements may suffer damage.On the contrary, usually air or fluid tight chamber or cylinder or hydraulic cylinder to be set, be used to drive the pneumatic or hydraulic thrust or the pressure of spacing ring, carriage and diaphragm with generation.Physical connection between the occupation mode of pressure chamber and the part that reduced is please referring to the description of hereinafter embodiment shown in Figure 10 and Figure 16 and other correlation diagrams being carried out.
Some other alternate embodiment is described below, and they provide independent spacing ring power, Waffer edge polishing force and wafer central authorities polishing force.Because the general structure of the embodiment of the invention is similar to the embodiment among Fig. 3 shown in Fig. 4 to Fig. 9, therefore their difference is only described below.
In the embodiment shown in fig. 4, diaphragm 250 comprises at least one opening or eyelet 265, and does not form enclosed cavity in the structure of rubbing head itself.On the contrary, only be installed (installation) on rubbing head, and after Pneumatic pipe cleaner crosses eyelet 265 and introduce wafer backside, could be set up wafer backside pressure, so that wafer is pressed against on the polishing pad at wafer.Although there is shown the embodiment that has diaphragm support plate 261, be appreciated that corner assembly 260 or margo part 263 that present embodiment also can adopt the front to be described with reference to Fig. 3 B and 3C.Under the situation of using the diaphragm support plate, the optional and useful structure of diaphragm support plate is to comprise a savings groove 291, and it is used for being collected in and applies vacuum to install and to be inhaled into when keeping wafer or the polishing fluid or the chip of suction pipeline 272.Described savings groove 291 can prevent that pipeline is blocked because of assembling foreign material.In addition, useful structure is the side 292 that downward-sloping extension is set for the savings groove, perhaps as a kind of selection, can utilize an opening littler than the maximum gauge of accumulator tank 291 to lead to accumulator tank 293.This feature can realize relatively large savings capacity under the situation of keeping maximum wafer backside holding power, and is convenient to liquid or polishing fluid are discharged from pipeline.
In the embodiment shown in fig. 5, diaphragm support plate 261 on the surface in the outside, have groove 294, these grooves are formed on the described surface by machined or with additive method, and whether guiding vacuum into different parts, and it is correct to help to test or survey the location of wafer.The bump 295 that is retained between the described groove is used for supporting wafer, to prevent its overbending.In being provided with the structure of eyelet, may be impaired owing to the wafer of installing by means of vacuum and keeping, it is comparatively desirable therefore having this bump.In one embodiment, be provided with radially combining structure with the groove 294 of circumferencial direction.A wafer can optionally be set have exploration hole 296, whether correctly be installed on the rubbing head to judge wafer.If vacuum pressure can be based upon wafer backside, illustrate that then wafer is correctly installed; Yet if can not set up vacuum, explanation does not have wafer or wafer correctly not to be installed.The details of the diaphragm support plate of this trough of belt will further describe by embodiment shown in Figure 16, and a kind of specific diaphragm support plate among this embodiment is shown among Figure 17 and Figure 18 in detail.
Also used diaphragm 250 among the embodiment among Fig. 6 with at least one opening or eyelet 265, and for controlled pressure ideally material is removed from the wafer front side surface, one flow air or other gas are conditioned, so that keep a layer of air (gas) between wafer backside surface 244 and diaphragm outer surface 256.In this embodiment, wafer supporting is on a layer of air.Although only show single eyelet 265 in the drawings, also can use one group or a plurality of such eyelet.Unnecessary air 280 flows out between wafer and diaphragm at the Waffer edge place.Also additional conduit can be set on the spacing ring interface, to collect and to reclaim air.Arrow among the figure is represented is that air flows on wafer backside surface and outwards flows out from the wafer neighboring.
Embodiment shown in Figure 7 is a kind of remodeling embodiment illustrated in fig. 3, and it is provided with a plurality of pressure chambers that are used for exerting pressure to wafer backside surface 244 (there is shown two pressure chambers, be used to apply power FBS1, FBS2 and corresponding pressure).Among the embodiment shown in Fig. 7 A Fig. 3 A illustrated embodiment has been done change, promptly be provided with the similar second support plate 261-2 and the secondary diaphragm 250-2 of combination in primary diaphragm 250-1 inside.These two structures are superimposed upon the middle part, thereby can control the pressure that is applied to the wafer middle part in control Waffer edge and spacing ring pressure separately.Although central lumen 251-2 and position, diaphragm 250-2 place have support plate 261-2 as shown in FIG., it is similar to the support plate 261-1 that is provided with for big outer latallae 250-1, but different support plate structures also can be adopted in this position, does not perhaps establish support plate.For example, can adopt the simple diaphragm that has formed an inner chamber.Should be appreciated that one or two described diaphragm can be extremely thin, so that the thickness of diaphragm 250-1,250-2 and quite little apart from the distance of wafer backside surface 244, this point is exaggerative to some extent in order to clearly illustrate structure in Fig. 7 A.In one embodiment, the combination thickness of these two diaphragms has only about 0.5mm to about 2mm, and thicker or thinner combining structure also can adopt certainly.In a further embodiment, the diaphragm that is covered with the different pressures chamber mutually against but not superposeing, partition wall or partition are used for the multiple inner chamber that is generally annular separate.Have among the embodiment of described multiple inner chamber at some, the partition wall between adjacent annular pressure chamber or the district is extremely thin, thereby separates walls is difficult at pressure area boundary build-up of pressure discontinuously arranged.In a further embodiment, be used for that the separated partition in pressure area can be had reinforcement.
A kind of remodeling of structure shown in Fig. 7 A has been shown among Fig. 7 B, has only shown the part of spacing ring 214 and carriage 212 among the figure, and other parts of rubbing head have not been shown.Should be pointed out that in this embodiment, holding first pressure among the outside or the edge transition chamber 251-1, holding second pressure among inside or the back side pressure chamber 251-2.Holding the 3rd pressure (not shown) in the spacing ring 214.As the front other embodiment are described, one or two among edge transition chamber 251-1 and the back side pressure chamber 251-2 can have opening or eyelet.Have under the situation of opening at edge transition chamber 251-1, this opening can suitably be set to adjoin the annulus hole (not shown) of 251-2 inboard, back side pressure chamber; Be appreciated that in this special embodiment inboard and outer latallae 250-1 and 250-2 do not need to overlap each other, thereby inboard diaphragm can have round-shapedly, outer latallae can have the annular shape around inboard diaphragm.
The another kind remodeling of multiple center pressure differential pressure control thought has been shown among Fig. 8, wherein the tubular pressure ring in circular cross section or capsule 255 are arranged between the different parts of diaphragm support plate 261 or carriage 212, and normally are placed in the groove 257 that is arranged in carriage.Described tubular pressure ring or capsule 255 are used for additionally removing to specific hope the additional pressure of zone supply of material.Passage 259 is used for pressure air (FBS2) or other fluids from ambient pressure source inlet tube capsule 257.After pressurized, the pipe capsule will increase complanation pressure (PBS1) with the part by being pressed on the diaphragm inner surface 254, and this pressure is only provided by inner chamber 251 in other cases.
Embodiment among Fig. 9 has further expanded this thought, wherein is provided with a plurality of adjacency or the tubular pressure ring or the capsule 255 of adjacency basically, thereby can certain zone be polished or complanation with the pressure that is higher or lower than the peripheral region.Though there is shown the tubular pressure ring or the capsule in circular cross section, but be appreciated that the shape of pipe can be selected easily in Fig. 8 and embodiment shown in Figure 9, so that the pressure of ideal distribution or power is applied on the diaphragm, and therefore be applied on the wafer 230.Pressed gas or fluid (FBS1, FBS2, FBS3, FBS4, FBS5) can be regulated, and distribute so that obtain desirable polish pressure on wafer surface.In one embodiment, pipe has the circular cross section, and in a further advantageous embodiment, pipe has the essentially rectangular cross section, and the tube-surface of general planar is by being pressed on the diaphragm.In the embodiment shown in fig. 9, ring pipe has different radial extension size or width within it between the external diameter.
Though the front has been described some embodiment respectively, but those having ordinary skill in the art will appreciate that, according to the guidance of this specification, under the prerequisite that does not depart from the scope of the present invention, element and feature among embodiment can make up mutually with element and the feature among another embodiment.
These embodiment have disclosed some key characters of CMP rubbing head of the present invention, and these features can not be covered by specific implementation detail.In case understood the operating structure of these embodiment, then the structure of embodiment, method of planarizing and advantage shown in Figure 10 and Figure 16 can more easily be understood and be understood.
Please recall the traditional design shown in Fig. 2 now, similarly adopt the traditional polymer abaculus 160 that is built between carriage lower surface 264 and the wafer backside surface 244 in the rubbing head structure.In this structure, be applied to pressure on the back surface 244 of wafer 230 and be (expection is uniform at least) uniformly.Be used for and be applied to Waffer edge place or near pressure with respect to the pressure that is applied to the wafer middle body or resisting the pressure that the upper surface of polishing pad 226 is applied on the spacing ring 214 and making change without any structure or mechanism.
Several alternate embodiment of structure of the present invention have been described at reference Fig. 3 to Fig. 9, and after these structures and method of planarizing that they provided and traditional structure shown in Fig. 2 compared, the more detailed description of below please notice being forwarded to two preferred embodiments of the present invention being done, diaphragm and sealing load chamber (Figure 10) have been adopted among one of them embodiment, the diaphragm (Figure 16) that has adopted to have opening among second embodiment, though they are similar to the embodiment shown in Fig. 3 and Fig. 5 respectively, can provide supplementary features and advantage for these embodiment.Under the guidance of this specification, persons of ordinary skill in the art may appreciate that the front also can be used for the embodiment shown in Figure 10 and Figure 16 is transformed into alternate configurations with reference to the described alternate embodiment of Fig. 5 to Fig. 9.
By hard relatively rubber ring being set and applying poppet pressure at wafer outer ledge place, can with respect to the Waffer edge inboard for example substrate center material removal amount and control the material removal amount of Waffer edge.
Poppet pressure presses against wafer backside with rubber ring, to form the secure seal of pressurized.By rubber ring wafer is pushed downwards in edge, can also be controlled the Waffer edge material removing rate with respect to wafer inside or central material clearance, thus the non-uniformity at control and restriction edge.
Should be pointed out that at some and utilize diaphragm to provide in the rubbing head structure of wafer backside pressure, all do not comprise the structure that can apply different pressures at the edge in the existing traditional C MP rubbing head structure with respect to interior zone.In structure of the present invention, skirt materials removal amount can be increased with respect to the higher poppet pressure for the back side pressure, skirt materials removal amount for wafer is central can be reduced with respect to the lower poppet pressure for the back side pressure with respect to wafer central authorities speech.By regulating the pressure of these two kinds of zoness of different, can realize evenly or uniform basically material removal amount; Or produced in the processing formerly under the situation of certain inhomogeneities, realize the removal amount of edge, to compensate the inhomogeneities of previous generation with respect to the ideal distribution of central authorities.
In these embodiment of the present invention, the restriction carriage mainly is for a stable element is provided, and the pressure in the poppet pressure chamber is guided on the rubber ring equably enabling, and is therefore guided in the zone of adjoining Waffer edge.(please recall, each embodiment of the present invention is used to regulate rim pressure, and absolute pressure uniformly is though undesirable or be not provided.) except by rubber ring to requiring the carriage neighboring to have the medium flatness under the situation that applies downward pressure on the wafer, the flatness of bracket surface and fineness are unimportant in other cases.Therefore, carriage can be the lower low-cost part of precision.
These structures provide a kind of polishing (or complanation) device, machine or instrument (CMP instrument), are used for polishing substrate or such as the surface of other workpiece such as semiconductor wafer.Described device comprises: rotatable polishing pad; Wafer carrier itself comprises a wafer or chip holding part again, is used to receive substrate and substrate is abutted against the polishing pad location; And wafer pressing piece, its comprise first pressing piece and and pressing piece, wherein first pressing piece partly applies first load pressure that presses against on the polishing pad at Waffer edge, second pressing piece applies second load pressure that presses against on the polishing pad at the wafer middle body, and first and second load pressures differ from one another.Although described wafer carrier and wafer pressing piece can separately use, in a preferred embodiment of the invention, burnishing device also comprises: spacing ring, and it surrounds wafer carrier; And the spacing ring pressing piece, it is to applying the 3rd load pressure that presses against on the polishing pad on the spacing ring.First, second and the 3rd load pressure can be regulated independently of one another.
Rubbing head 302 shown in Figure 10 comprises housing 304, and it has last coverboard 308, lower casing lateral margin 310 and inner hull 312.Last coverboard 308 is connecting axle 306 by means of screw or other securing members 312,314 and by the shaft coupling collar 316.Though shown in the figure is simple axle 306, but being appreciated that axle 306 has traditional structure usually and comprises for example is used for axle be can be rotated to support on bearing (not shown) on the polishing machine remainder, is used for one or more swivel joints 305 that gas and/or fluid are introduced rubbing head from the gas that is located at the rubbing head outside or fluid regular supply source.An example that can be used in such axle in the rubbing head structure of the present invention and swivel joint is shown in the U.S. Patent No. 5 that is called " Rotary Union for Coupling Fluids in a WaferPolishing Apparatus " that people such as Volodarsky transfers Mitsubshi Materials Corp (Mitsubishi MaterialCorporation), in 443,416.
In the embodiment of foregoing description, last coverboard 308 provides stable mechanical platform, in order to hang or to install spacing ring assembly 320 and carriage assembly 350.Lower casing lateral margin 310 provides protection for the outer peripheral portion of spacing ring assemblies 320; to prevent that polishing fluid from entering in the rubbing head; and the horizontal movement of control or constraint spacing ring assembly 320 can also be operationally be clamped in the radially outer edge part 324 of the flexible installing ring 323 of spacing ring assembly and goes up on the coverboard 308.
Single-piece carriage and the spacing ring that is respectively general cylindrical shape and annular described in the front in Fig. 3 and embodiment shown in Figure 4, and more complicated assemblies is provided in the present embodiment, and it is made of a plurality of elements, to realize these functions.Therefore, what describe below is spacing ring assembly but not spacing ring, description be carriage assembly but not carriage.Structure that the front had been described and operating principle also are applicable to these following additional embodiment, and be appreciated that the front can be enhanced and bring into play according to the described inventive features of Fig. 3 to Fig. 9 in reference Figure 10 and the described particular structural details of Figure 16.
Spacing ring assembly 320 comprises a spacing ring 321, and it is at spacing ring lower surface 322 places contacts polishing pad 226, and has formed wafer tank 335 along inner edge 335 radially, with the motion of constraint wafer 230 in the horizontal plane of polishing pad 226.Spacing ring assembly 320 also comprises the roughly suspension plate 336 of annular, and it has lower surface 337 and upper surface 338.Lower surface 337 is connected on the upper surface (with wear surface 322 opposite surfaces) of spacing ring pressure 321, and suspension plate 336 extends up to upper surface 338 from described lower surface, so that described upper surface cooperates with the lower surface 339 of clamper 340, thereby hang Connection Element 325 and spacing ring suspension plate 336 is connected on the coverboard 308 movably by means of the spacing ring of annular roughly.
In one embodiment of the invention, spacing ring pressure can be used to compensate the wearing and tearing of spacing ring.After the spacing ring wearing and tearing in non-rectangle cross section, the surface area that contacts with polishing pad will change with wearing and tearing as time passes.Consequently, the pressure of setting up for process (for example 5psi) can not get a desired effect, and should be compensated the surface to be adapted to increase.The spacing ring shape in non-rectangle cross section for example is provided with the spacing ring shape of wedge shape outer rim, is preferred the employing, because it can improve polishing fluid at wafer be positioned at distribution on the polishing pad below the wafer.Be provided with the structure of this band angle, just can easily supply with polishing fluid.Therefore, spacing ring pressure can be with respect to the poppet pressure of Waffer edge and the back side pressure in the wafer middle section and control separately.Desirable structure is, the compensation of spacing ring abrasion pressure is to realize automatically, and according to processing quantity, hours run number, the hand dipping result of for example wafer or be used to survey spacing ring actual wear amount sensor result of detection and by computer control.
In one embodiment, spacing ring hangs Connection Element 325 by molded formation of flexible rubber-like material (EPDM material), to make it to comprise two circular passages 341,342 that are positioned at clamper 340 both sides.Described two passages are rendered as crooked loop shape (seeing Figure 12) on the cross section, and make the spacing ring assembly can with respect to it facing to housing 304 and carriage assembly 350 make the relative nothing vertical motion that rubs.In addition, such hanging element 325 is opened the motion of spacing ring assembly 320 and the motion isolation of carriage assembly 350, so that these motions are separate or separate basically, except producing on their slidingsurface the negligible friction.
Spacing ring assembly 320 is to realize like this that at least in part promptly radially outer edge part 324 is clamped between the part and lower casing lateral margin 310 of coverboard 308 by screw 344 or other securing members with respect to the suspension of housing 304.By similar mode, radially inner margin portion 326 is clamped between another part and lower casing lateral margin 310 of coverboard 308 by screw 345 or other securing members.The mid portion of hanging element 325 is clamped between the upper surface and clamper 339 of spacing ring suspension plate 336 by screw 346 or other securing members.Desirable structure is, the processed fillet in the edge of housing 304, spacing ring suspension plate 336 and clamper 339 and bight, approaching the natural curvature of spacing ring hanging element 325, thereby reduce the stress of hanging element, and prevent that the hanging element wearing and tearing are to prolong its life-span at contact point.Passage or loop 314,342 promptly can be made spacing ring assembly 320 vertically move (moving up and down with respect to polishing pad) within the specific limits by such construction size.
Moving of spacing ring assembly 320 preferably is limited in certain range of movement, if should move for wafer load, for wafer unloading and the polishing operation enough.Though, existing mechanical type interference mechanism miscellaneous can adopt, in order to the constrained motion scope, but in the embodiment shown in fig. 10, in spacing ring suspension plate 336, be provided with breach 348, be used to contact the coupling projection 349 that extends out from inner hull 312, exceed preset limit with the motion that prevents spacing ring.This super scope safeguard measure can be protected inner member valuably, and particularly spacing ring hangs Connection Element 325, is damaged or wearing and tearing too early to prevent them.As example, if hanging Connection Element 325 by spacing ring, supporting the total weight of spacing ring assembly, it is impaired easily that then spacing ring hangs Connection Element 325, perhaps weares and teares too early to I haven't seen you for ages.
The embodiment that spacing ring hangs Connection Element 325 is shown among Figure 11, there is shown the biopsy cavity marker devices perspective view of this element, shown the mid portion 343 of this element, inside and outside loop or channel part 342,331 and radially interior peripheral edge portion 326,324.
Describe with reference to Fig. 3 and Fig. 4 as the front, assembling spheroid or equivalent frame for movement such as key, spline, pad, film or analog can be used for housing 208 is connected to carriage 350 and spacing ring assembly 320, rotatablely move with realization.
In an alternate embodiment, sheet metal 329 (for example thin stainless steel sheet material) is used to transmit torque to spacing ring assembly and carriage assembly, as shown in figure 12.This structure makes between housing and continuous spacing ring assembly or the carriage assembly vertical motion relatively, and transferring rotational motion and moment between these connected components simultaneously.This metal connecting piece 339 has such structure, promptly can only be along a direction of rotation carry-over moment, and owing to rubbing head only rotates along a direction, so this point can not throw into question.Other diaphragm type connectors also can be used for housing is connected to spacing ring assembly and/or carriage assembly.Creative feature of the present invention described herein is not limited to any specific spacing ring or carriage suspension.
The frame for movement of housing, spacing ring assembly and carriage assembly is designed to be the floor space that is used to reduce the CMP rubbing head.As example, the part of spacing ring suspension plate covers on the part of bearing bracket plate.These and otherwise frame for movement preferably can reduce the size of CMP processing head, and can construct less CMP machine at large.
The radial outside part 361 of carriage assembly hanging element 360 is connecting the upper surface 366 of bearing bracket plate 351 by first clamper 367.As example, clamper 367 can comprise the ring 368 of annular, and it covers on the radial outside part 361, and is fastened on the bearing bracket plate 351 by means of the screw 369 that passes the hole 364 in the hanging element 360.The radially inner side part 362 of carriage assembly hanging element 360 is connected on the lower surface 370 by second clamper 371.As example, second clamper 371 can comprise the ring 371 of annular, and it covers on the radially inner side part 362, and is fastened on the bearing bracket plate 351 by means of the screw 372 that passes the hole 364 in the hanging element 360.
A detail section in a plurality of technical characterictics of CMP rubbing head has been shown, the exemplary configuration of having showed carriage assembly hanging element 360 among Figure 13.This element also is shown in the biopsy cavity marker devices perspective view among Figure 14.Specifically, the element shown in the figure 360 has the mid portion 363 of an employing annular loop or channel part form and radially interior peripheral edge portion 361,362.Adopt the circular ring path 363 of crooked loop cross-sectional form to make carriage assembly to make relative nothing friction vertical motion with respect to relative housing 304 and spacing ring assembly 320.In addition, such hanging element 360 is opened the motion of spacing ring assembly 320 and the motion isolation of carriage assembly 350, so that these motions are separate or separate basically, except producing on their slidingsurface the negligible friction.Hanging element 360 also can be made by EPDM, and this material also is known as ERR, and it is the general purpose rubber material, and has excellent chemical resistance and dynamic performance.A kind of material of retrofiting of EPDM has the specified durometer hardness between the tensile strength and 55 to 65 of 800psi.
The upper surface 380 of diaphragm support plate 352 is connected on the lower surface 381 of bearing bracket plate 351 by screw 353 or other securing members.In one embodiment, the lower surface of support plate is that outer surface 382 (facing to the surface of diaphragm 350) comprises a groove or cavity 383, thereby when diaphragm 350 is connected on the diaphragm support plate 352, make diaphragm partly locate directly to contact support plate in the outer radial periphery of adjoining the support plate edge.In the embodiment of Figure 10, groove between diaphragm 350 and diaphragm support plate or cavity 383 are determined an inner chamber, can introduce fluid or air pressure (normal pressure or negative pressure or vacuum) in it, so that the operation that rubbing head is realized ideal.
In alternate embodiment shown in Figure 16, diaphragm comprises at least one hole or eyelet 265, does not therefore form enclosure space or inner chamber, but makes pressure be applied directly to wafer backside.This after embodiment in diaphragm 350 be used for limiting polishing fluid being sticky with of rubbing head, and help wafer sealing or partially sealed on rubbing head.
Please recall now the simplified embodiment among Fig. 3 and Fig. 4 is described, the reinforcement with the corner assembly 260 of predetermined material performance, the diaphragm support plate 261 that has groove 279 or diaphragm itself is used to exert all one's strength from transmitting ideally near the carriage neighboring.Diaphragm support plate 351 oneself or cooperate with diaphragm 250 and also can reach similar effects, described diaphragm 250 is by valuably stretch on the diaphragm support plate 252 (being similar to the tighten mode of bulging covering on cylindrical drum barrel to a certain extent), and be connected by diaphragm support plate 250, wherein the lower surface of bearing bracket plate is as clamping element.
In one embodiment, diaphragm 250 comes out by EPDM or other rubber-like material are molded; Yet other materials also can use.For example, silicon rubber also can use, but it may adhere on the silicon wafer under certain conditions once in a while.The common durometer hardness of diaphragm material should be between about 20 to about 80, is more typically about 30 to about 50, and prevailing is about 35 to about 45, and under many circumstances when durometer hardness is 40 effect best.Durometer hardness is a yardstick of measuring polymeric material hardness.The material of lower durometer hardness value representative is than the material softer of higher durometer hardness representative.Material should have elasticity and good chemical resistance, also should have physics and chemical property that other are suitable for CMP planarization operation environment.
In one embodiment, it is littler by about 0% to about 5% than the installation dimension of expecting on diameter that diaphragm 250,350 is made, more common is on diameter little about 2% and about 3%, be stretched to full-size (100%) then in installation process, this mode is effective especially for low-durometer material.Like this, the manufacturing dimension of diaphragm is installed diameter less than it, and is stretched when mounted and tightens.
An embodiment of circular film 250 has been shown among Figure 15.The manufacturing nominal thickness of diaphragm 250 is extremely approximately 2mm of about 0.2mm, and that more common is extremely approximately 1.5mm of about 0.5mm, and is about 1mm In a particular embodiment.These sizes refer to the middle body with constant thickness on the diaphragm, do not comprise near reinforcement edge or the edge of being positioned among some embodiment of front.According to specific application, diaphragm or cover on the bight ring perhaps covers on the outer rim of diaphragm support plate 261.
The amount of diaphragm actual contact wafer backside can require according to the keep-out area, edge, the uniformity of load wafer, the polishing non-uniformity and other various factors that carry out the CMP operation under the situation that does not have edge pressure reduction change.Under representative condition, the amount that diaphragm contacts with wafer backside can approximately change between 0.5mm and the about 20mm, more is typically between about 1mm and about 10mm, is typically about most between 1mm and the about 5mm.Yet, propose these scopes and only be in order to proofread and correct the processing non-uniformity, and structure of the present invention and method are not confined in these scopes.For example, if for some reason and need provide direct poppet pressure in exterior domain at the 50mm of wafer, structure then of the present invention and method can easily be made variation for adapting to this condition.
Transmit in the rubbing head of poppet pressure to Waffer edge at circle or the annular bight abaculus of utilizing of the present invention, diaphragm can have uniform wall thickness at its diapire and sidewall sections.Yet when thickening diaphragm sidewall itself was used as force transfering device, the thickness of sidewall should be suitable with the distance that carriage force is applied directly on the wafer to be crossed over.In brief, be applied in the 3mm zone of wafer outer rim if wish carriage force, then the diaphragm sidewall thickness should be 3mm.Should also be understood that not necessarily accurate one to one relation of ratio between the scope that needs carriage directly to transmit power or zone and the diaphragm sidewall thickness.May occur the certain power or the transmission of pressure between the adjacent area, and in fact wish to avoid occurring the sudden change of pressure under certain conditions.In addition, although such was the case with, some the time wish that the thickness of diaphragm sidewall thickness is slightly less than or is slightly larger than the distance that carriage force applies, to realize the ideal transmission between poppet pressure and the wafer backside pressure.For example, in some cases, for the wafer outer regions of the direct acting specified 3mm of poppet pressure, the diaphragm sidewall thickness in this zone can be in the scope of about 2mm and about 4mm.Be to be understood that, these specific numerical value are exemplary, and actual optimum size will depend on multiple factor, for example diaphragm material, complanation pressure, polishing pad characteristic, polishing fluid type and the like, and normally emphasis is determined in the development process of CMP machine and process.
Do not need just can learn that generally speaking, when FSC＞FBS, poppet pressure (PSC) surpasses Waffer edge pressure, so Waffer edge bears poppet pressure (PSC), and the wafer middle body bears back side pressure (PBS) by theory analysis.When FSC＜FBS, its role will be above poppet pressure (PSC) under the enough big situation of diaphragm back side pressure (PBS).Yet the CMP rubbing head is to operate under the situation of FSC＜FBS usually, thus the quantity of material that the quantity of material that makes the wafer periphery remove is removed less than the middle part.Described relative pressure, diameter and material property can be conditioned, with the complanation result who realizes ideal.
Please be careful now pressure area, pressure chamber and the pressure that is applied to system's different parts are described.In general, spacing ring pressure is applied in, and presses against on the polishing pad with the bottom wear surface with spacing ring, and poppet pressure is applied on the outer radial periphery edge of wafer, and wafer backside pressure (or vacuum) is applied on the central posterior components of wafer.Additional pressure line or inner chamber can be located in the rubbing head valuably, in order to hold polishing fluid or chip, move in the head pipeline to prevent them.One or more additonal pressures district can optionally be applied in the central, circular zone or the annular zone line between described central, circular zone and wafer backside outer regions of wafer backside.Among the embodiment of described inflatable circular pipe of the use of Miao Shuing here or annular balloon, be provided with swivel joint, in these and other zone of pressure fluid being introduced rubbing head.
In the embodiment that had just described, back side pressure chamber 354 roughly is formed between the inner surface 356 of the outer surface 355 of diaphragm support plate 352 and diaphragm 350.
Please be careful embodiment shown in Figure 16 now, it has the diaphragm that has eyelet with the structural similarity of describing with reference to Fig. 4.Diaphragm pressure port or eyelet are located in the diaphragm 250, so that back side pressure is applied directly on the wafer, and near the wafer neighboring that is directly applied poppet pressure, diaphragm does not need the back surface of contact wafer.In the present embodiment, the diaphragm that covers in polishing process on the wafer middle body is mainly used in realization pressure/vacuum seal.That is to say that in the loading and uninstall process of wafer, wafer is held and is resisted against on the rubbing head.The size of diaphragm eyelet can change to from several millimeters and expand to the external diameter of carrier frame plate no better than.
Describe according to Fig. 4 as the front, a savings groove is used for preventing that polishing fluid is in the wafer loading procedure is made progress suction pressure/vacuum pipeline.Make the savings groove edge tilt can be so that polishing fluid be discharged from rubbing head.Note that and wish that the polishing liquid measure that sucks in the savings groove is less, thereby only need to clean once in a while the savings groove.This cleaning can be finished by hand, perhaps also cleans pipeline and savings groove by spraying one compressed air, water or air-water mixture.
The diaphragm eyelet is set causes vacuum complicated to a certain extent, and whether suitable process of installing is complicated to cause detecting wafer by the vacuum pressure of surveying foundation to the process of wafer backside introducing.Under the more shallow situation of groove in the diaphragm support plate, introduce vacuum by central pressure line and may cause diaphragm centering to be sealed on the support plate, and vacuum is not introduced other zones of wafer.Bear suction the situation of diaphragm when not having eyelet itself.On the other hand, this problem can be remedied by the degree of depth of increase diaphragm support plate groove or by use bight abaculus or diaphragm margo in certain embodiments, and this can reduce can be to the holding power of wafer supply.
In a kind of better settling mode, equipped the diaphragm support plate embodiment shown in Figure 17 and Figure 18, wherein Figure 18 is the perspective view of support plate shown in Figure 17.Additional supporting can prevent wafer bending valuably, bloats or curl.Although permanent deformation, crackle or other breakages can not appear in wafer substrate itself usually, metal, oxide and/or other structures and the pipeline that are positioned at wafer front side may break when being subjected to stress.Therefore, wishing provides enough supports in wafer backside, particularly in the process that wafer loaded before polishing and when being attracted on the diaphragm in the process that unloads after the polishing.
The outer rim setting of diaphragm support plate can be adjoined in one or more eyelets or hole.They are as bolt hole, and so that the diaphragm support plate is installed on the carrier frame plate, and diaphragm is clamped between the two.First and second radial passages begin to extend from central aperture, described central aperture is being communicated with ambient pressure/vacuum source of supply, described source of supply is used for providing back side pressure at polishing process, and provides vacuum before polishing and in the chip sucking additive process afterwards.Intersect the first and second donut passages and radial passage.The effect of this structure be with pressure or vacuum communicating to wafer, and provide desirable supporting for wafer.
The physical arrangement of rubbing head also causes being convenient to touch diaphragm 250, so that from the rubbing head outside diaphragm 250 is taken off from the carriage support plate, and does not need to take rubbing head apart as many traditional rubbing head structures.Please recall the bolt hole in the diaphragm support plate, they can be used for diaphragm is fastened on carrier frame plate, and make diaphragm to be touched from the rubbing head outside.One or one group of hole are used to check the existence and the location situation of vacuum and wafer, and another group hole is used to touch diaphragm is connected to screw used on the rubbing head or other securing members.Because diaphragm is wear-out part, thereby it needs periodic replacement, so, can change diaphragm from the rubbing head outside and the structure that do not need to take apart rubbing head is useful.
Below with reference to Figure 19 to Figure 27 other embodiment are described.Each CMP rubbing head among these embodiment and CMP tool construction all are similar to the front at least to a certain extent with reference to Fig. 7 A, Fig. 7 B, Fig. 8 and the described embodiment of Fig. 9.
The scheme of first area or area I has been shown among Figure 19, and wherein rubbing head 300 has two inner chambers, thereby has formed a fringe region and a middle section.In the embodiment shown in Figure 19, the rubbing head 300 that shows with the form of side view in partial cross-section has an exocoel or edge transition chamber 302 and inner chamber or back side pressure chamber 304.Rubbing head 300 in the side view in partial cross-section comprises carrier frame plate 306, spacing ring 310 and supporting ring or the connector spacing ring 312 with outer surface 308.The outer surface 312 of flexible membrane 314,316 (representing with irregular line among the figure, with flexibility or the elasticity of emphasizing them) and carrier frame plate 306 and pad 313 or supporting member are cooperated, to form inner chamber 302,304.Outer latallae 314 has receiving surface 317, in order to substrate or wafer 318 are held thereon.The pressure fluid of pressure source (not shown) of coming from the outside is introduced in the edge transition chamber 302 with first pressure, and introduces in the back side pressure chamber 304 with second pressure.Pressure fluid is air or other gas normally, yet, also can use liquid alternatively.Adapter cavity 302 is used for entire wafer 318 is comprised Waffer edge by being pressed in the polishing pad (not shown), and back side pressure chamber 304 is used for load force is applied to the middle section of wafer.In edge extent or zone, have only the edge transition pressure in the edge transition chamber 302 to abut against the polishing pad loading or press against wafer 318; Yet in the middle section that two diaphragms 314,316 are superposeing each other, polish pressure is the combination of two kinds of pressure, although these two kinds of pressure must not add up each other.The purpose that two overlap-add region are set is to allow different pressure or loads to be based upon in two scopes or the zone.These two kinds of pressure are preferably determined in process, with the complanation result who realizes ideal.Usually, although be not must be so, the fluid pressure of introducing in the back side pressure chamber 304 be higher than the fluid pressure of introducing in the edge transition chamber 302.This embodiment be applicable to the material of wishing central authorities remove faster in the polishing process, for example wafer 318 has under the situation of convex face because of having deposited such as materials such as copper.Perhaps, cause because of polishing pad, used specific polishing fluid or so-called edge effect the material at edge remove faster in the polishing process, wish sometimes to utilize the more high pressure in the middle section and realize compensation.
The scheme of second area or area I I has been shown among Figure 20, and wherein rubbing head 300 has a fringe region and a middle section.In the embodiment of Figure 20, be provided with similar structure, just outer latallae 314 has the form of opening annulus diaphragm, and inboard diaphragm 316 has circle or disc-shape, and these two diaphragms mutual superposition not.In this embodiment, annular outboard diaphragm 314 has the receiving surface 317 that is used to hold wafer 318 and helps wafer is sealed in lip 320 on the rubbing head 300.Pressure fluid in first chamber 302 that introducing is limited by the outer surface 308 of the dorsal part of outer latallae 314, wafer 318 and carrier frame plate 306 is applied directly to power on the wafer backside part with generation.Outer latallae 314 also helps to apply rim pressure or power on the marginal portion of wafer 318.
The scheme of the 3rd zone or area I II has been shown among Figure 21, and wherein rubbing head 300 has a fringe region and a middle section.Embodiment among Figure 21 is similar to the embodiment shown in Figure 19 and 20, just the outside and inboard diaphragm 314,316 are replaced by single diaphragm 322, described diaphragm 322 has inwall 324, separates in order to marginal zone pressure chamber and the back side pressure chamber that will not have lap each other.Like this, the edge transition pressure of introducing in the chamber 302, the outside only acts in the exterior annular zone of wafer 318, and the pressure of introducing in the inboard chamber 314 only acts on the wafer inner circular part.
The scheme of the 4th zone or area I V has been shown among Figure 22, and wherein rubbing head 300 has a fringe region and a middle section.Embodiment among Figure 22 is similar to the front with reference to the described embodiment of Figure 21, just comprises or formed the interior pipe 326 or the capsule of inflatable in the chamber, the outside.In a kind of remodeling of present embodiment, rubbing head 300 be inflated to that interior pipe 326 before the expecting pressure fits together and sealed, thereby simplified the introducing of pressure fluid to rubbing head.Therefore, be applied to advocating on the marginal portion of wafer 318 and will depend on the power that carriage 306 applies, and the power that is applied on the middle body of wafer 318 depends on fluid pressure of introducing in the central chamber 304 and the combination that is applied to the power on the carriage.Like this, by changing the pressure of introducing in the central chamber, can change carriage 306 applied forces and be passed to the middle section of wafer 318 and the ratio in the fringe region.That is to say, if the fluid pressure in the introducing central chamber 314 is higher than the pressure in the inflatable pipe 326, then can cause the whole or major part of carriage 306 applied forces to be passed in the middle section of wafer 318, if and the fluid pressure in the introducing central chamber is lower than the pressure in the inflatable pipe, then can cause the whole or major part of carriage applied force to be passed in the wafer edge region.
The scheme of the 5th zone or regional V has been shown among Figure 23, and wherein rubbing head 300 has single annular diaphragm 328, to produce a fringe region and a middle section.Embodiment among Figure 23 comprises an annulus chamber, the outside 330 that is formed by described ring film 328.Edge transition chamber 302 is formed by the outer surface 308 and the pad 313 of ring film 328, carrier frame plate 306.Be used for not comprising diaphragm separately or clear and definite inner chamber to the back side pressure chamber 304 that the wafer inside part applies polish pressure.On the contrary, back side pressure chamber 304 is formed by the inner peripheral 322 of the outer surface 308 of carrier frame plate 306, ring film 328 and the wafer 318 that remains on the receiving surface 317 of ring film.Like this, 304 in back side pressure chamber is formed at wafer 318 or other substrates when being installed on the rubbing head 300, particularly when wafer is installed and is sealed on the ring film 328.The advantage of present embodiment is that the flaw that may occur in the diaphragm (or contact carriage of the prior art) can not cause the middle body that has directly applied pressure on the wafer 318 the complanation deviation to occur.
A kind of scheme has been shown among Figure 24, and wherein rubbing head 300 comprises a plurality of diaphragms or has the single diaphragm of a plurality of inwalls, thereby has formed a middle section and a plurality of annular region.Embodiment shown in Figure 24 is provided with: a plurality of diaphragms, comprising a single diaphragm 334 and four ring film 336A-D that formed four annular region 338A-D that is covered with the lower surface 308 of carrier frame plate 306 basically; And a middle section 340, the internal perisporium of its lower surface by carrier frame plate, single diaphragm 334 and ring film 336D forms.Perhaps, can use the single diaphragm (not shown) that has four annular inner walls, to form five zones.In any one the foregoing description, five zones all can be controlled simultaneously and basically independently of one another.If wish to adopt still less or more zone, then the quantity of inwall and/or diaphragm can be made corresponding adjusting, to form the inner chamber of ideal quantity.
The embodiment of a kind of pair of diaphragm rubbing head has been shown among Figure 25, and one of them outer latallae adopts the form of open annular diaphragm, and the pressure that is applied on the interior annular diaphragm can change, to change the area of the power that is applied on the substrate center part.Referring to Figure 25, rubbing head 350 mainly comprises a housing or support 352, its have be used for polishing or planarization operation substrate 356 is kept and be positioned on the polished surface (not shown) carrier frame plate 354 and around the spacing ring 358 of the circumference of the part of carrier frame plate.Carrier frame plate 354 is suspended on the support 352, and spacing ring 358 is suspended on the support 352 by supporting ring 360, thereby makes them vertically to move, and almost not friction and can be crooked.Little mechanical allowance is located between carrier frame plate 354 and spacing ring 358 and the adjacent elements, so that they can be floated on polished surface by this way, promptly can allow little vertically the moving and the minute angle variation that occurs in the polishing operation.A flange 361 is connected on the inboard lower surface 362 of housing 352 by screw (not shown) or other securing members.Flange 361 by first flexible piece or packing ring 364 be combined in one with medial branch carrier ring 366 that carrier frame plate 354 links to each other on, thereby sinking support carrier frame plate, and forms a closed inner chamber or cavity 368 above carrier frame plate.Second flexible piece or packing ring 370 that spacing ring 358 is extended between the side edge portions 372 of carrier frame plate 354 and support 352 are supporting.Spacing ring 358 can utilize binding agent, screw or other securing member (not shown) and be connected on second packing ring 370 by support plate 360, and described securing member is connecting a support plate (not shown) at the opposition side of second packing ring again.Flange 361, below side edge portions 372 medial branch carrier rings 366 and first and second packing rings 366,370 have formed second enclosed cavity 374 that is positioned at spacing ring 358 tops.As previously mentioned, in when operation, as described in pressure fluid can be introduced into as gas or liquid in the cavity 368,374, to provide respectively the power of carrier frame plate 354 and spacing ring 358 being pushed to polished surface.
According to embodiments of the invention, rubbing head 350 also comprises: annular primary diaphragm 376, it is connecting the outer surface 378 of carrier frame plate 354 by pad 379, and described primary diaphragm has a receiving surface 380 that is used to hold substrate 356 and one and is used to be sealed in the substrate dorsal part so that form the lip or the antelabium 382 in first chamber 384 between substrate dorsal part and carrier frame plate outer surface; And secondary diaphragm 386, it is arranged in the primary diaphragm top.Secondary diaphragm 386 is connecting carrier frame plate 354, so that form second chamber 388 between the outer surface 378 of the inner surface 390 of secondary diaphragm and carrier frame plate.In the polishing operation process, pressure fluid is introduced in second chamber 388 by runner 391, causing that diaphragm bloats or expands outwardly, thereby on the part of substrate 356 dorsal parts, apply power, can abut against polishing pad like this and push the predetermined area shown in arrow among the figure 392 on the substrate surface.Described predetermined area is proportional with the pressure of introducing the fluid in second chamber, and in one embodiment, predetermined area is directly proportional with fluid pressure.
In one embodiment, the low pressure fluid of fluid that pressure ratio is introduced in second chamber 388 is introduced in first chamber 384 by runner 393, pushes the surface of substrate 356 to abut against polishing pad.In this embodiment, predetermined area 392 is proportional with the pressure reduction of introducing the fluid in first and second chambeies.
In another embodiment, secondary diaphragm 386 comprises side edge portions 394 and bottom surface section 396, the hardness of described side edge portions is higher than described bottom surface section, expands, bloats or is out of shape with rule and controllable mode thereby can change the bottom surface section that makes secondary diaphragm by the pressure between first and second chambeies 384,388.Preferred construction is hardness ratio bottom surface section 396 height at least 50% of side edge portions 394.Specifically, at the durometer hardness of bottom surface section 396 when being about 30A to about 60A, the durometer hardness of side edge portions is about 60A to about 90A.What most preferably adopt is that when the durometer hardness of bottom surface section 396 was about 50A, the durometer hardness of side edge portions was about 70A.
Perhaps, the thickness of bottom surface section 396 can be less than the thickness of side edge portions 394.Preferred construction is that the thickness of side edge portions 394 is greater than bottom surface section 396 about 20 to 70%.Preferred structure is that the thickness of side edge portions 394 is greater than bottom surface section 396 about 50%.Like this, be second or the inboard diaphragm 386 of about 0.3mm for having thickness to the bottom surface section 396 of about 3mm, the thickness of side edge portions 394 is generally about 1mm to about 30mm.Be appreciated that accurate thickness also will depend on the overall diameter of inboard diaphragm 386 especially.That is to say that for holding the inboard diaphragm 386 that diameter is a 100mm substrate 356, its thickness is less than the inboard diaphragm that is used to hold 200mm or 300mm substrate.
In another embodiment, as shown in figure 26, primary diaphragm 376 is around second or inboard diaphragm 386 and roughly extend across the outer surface 378 of carrier frame plate 354, introduce pressure fluid in second chamber will cause secondary diaphragm to first or outside latallae 376 apply power, thereby with the surface portion in the predetermined area on the substrate 356 392 by being pressed on the polishing pad.As a kind of selection, first or outer latallae 376 can add opening or the hole (not shown) that comprises some, they extend through the thickness of outer latallae 376 with the fluid of exerting pressure, and directly push the dorsal part of substrate 356 at least in part, with substrate directly by being pressed on the polishing pad.Generally speaking, the scope that applies of pressure is about 2 to 8psi, and more typical is about 5psi.Preferred construction is, the quantity in described hole and size are selected like this, the area that substrate 356 is directly exposed under the pressure fluid maximizes, simultaneously can provide enough areas for receiving surface 380 again, make it to fit or the contact substrate, so that in polishing process, apply moment or rotating energy to substrate from rubbing head 350.
Another embodiment of rubbing head 350 has been shown among Figure 27, and it has the single diaphragm that adopts closed ring diaphragm 400 forms, in order to being sealed in the dorsal part of substrate 356, thereby forms two inner chambers.First annular cavity 402 is formed by the outer surface 378 of ring film 400, pad 379 and carrier frame plate 354.Second or central chamber 404 form by the outer surface 378 of ring film 400, carrier frame plate 354 and the dorsal part that remains on the substrate 356 on the receiving surface 380 of ring film.The pressure that is applied on the ring film 400 can change, and to change the relative size of inner chamber 402,404, also promptly changes the area of the marginal portion that has been applied in power on the substrate 356.
In one embodiment, the low pressure fluid of fluid that pressure ratio is introduced in the annular chamber 402 is introduced in the central chamber 404, with the surface of substrate 356 by being pressed on the polishing pad.In this embodiment, predetermined area 392 is proportional with the pressure reduction of introducing the fluid in annular chamber 402 and the central chamber 404.
In another embodiment, ring film 400 has side edge portions 406 and bottom surface section 408, the hardness of described side edge portions is higher than described bottom surface section, expands, bloats or is out of shape with rule and controllable mode thereby can change the bottom surface section 408 that makes ring film 400 by the pressure that is fed to the fluid in the inner chamber 402,404.Preferred construction is hardness ratio bottom surface section 408 height at least 50% of side edge portions 406.Specifically, at the durometer hardness of bottom surface section 408 when being about 30A to about 60A, the durometer hardness of side edge portions 406 is about 60A to about 90A.What most preferably adopt is that when the durometer hardness of bottom surface section 408 was about 50A, the durometer hardness of side edge portions 406 was about 70A.
Perhaps, the thickness of bottom surface section 408 can be less than the thickness of side edge portions 406.Preferred construction is that the thickness of side edge portions 406 is greater than bottom surface section 408 about 20 to 70%.Preferred structure is that the thickness of side edge portions 406 is greater than bottom surface section 408 about 50%.Like this, be the ring film 400 of about 0.3mm for having thickness to the bottom surface section 408 of about 3mm, the thickness of side edge portions 406 is generally about 1mm to about 30mm.Be appreciated that accurate thickness also will depend on the overall diameter of ring film 400 especially.That is to say that for holding the ring film 400 that diameter is a 100mm substrate 356, its thickness is less than the ring film that is used to hold 200mm or 300mm substrate.
Those having ordinary skill in the art will appreciate that, under the guidance of this specification, other combining structures of circular and ring film can be set, and each inner chamber can adopt the form of sealing, perhaps adopt only when wafer is installed on the rubbing head, to form a form that seals.
Be further appreciated that the quantity along with the pressure span increases, need be the different pressure of these zone supplies.For this reason, can use swivel joint.Yet, along with the quantity in zone increases, the swivel joint of requirement is set, just utilize the different pressures of the swivel joint introducing ideal quantity of requirement, also correspondingly become complicated.Therefore, in some embodiment of CMP rubbing head of the present invention, CMP instrument and polishing and method of planarizing, on the rubbing head or within be provided with pressure-regulating device.As example, pressure-regulating device can comprise a plurality of pressure regulators, and they are connecting a common set tracheae, to receive pressed gas from a public source of supply.Single source of supply is fed to pressed gas in the zones of different with predetermined adjusting pressure.Pressure is regulated and can be fixed, and also can comprise sensor and feedback device, so that the pressure in each zone is maintained desirable rank.
Following repeated description importances more of the present invention are with structure, function and the advantage of further emphasizing them.
In one aspect of the invention, provide a kind of support that is used in the substrate burnishing device, described burnishing device is used for polishing substrate such as semiconductor wafer.Described support comprises: housing; Spacing ring, it is flexibly connecting housing; First pressure chamber, it is used to apply first power, so that spacing ring is promoted with respect to housing along first predetermined direction; Carrier frame plate, it has outer surface, and is flexibly connecting housing; Second pressure chamber, it is used to apply second power, so that spacing ring is promoted with respect to housing along second predetermined direction; Described spacing ring is around the part of carrier frame plate, and limits a circular groove; Pad, it is connecting the neighboring of carrier frame plate outer surface in the spacing ring circular groove; Diaphragm, it is connecting carrier frame plate by pad, and is arranged in the circular groove, between diaphragm and the carrier frame plate outer surface across the thickness of pad; And the 3rd pressure chamber, it is formed between diaphragm and the carrier frame plate outer surface, is used to apply the 3rd power, so that spacing ring is promoted with respect to housing along the 3rd predetermined direction.In general, there is not abaculus to be located between diaphragm and the substrate, therefore the deviation between the different process that can reduce to cause because of the cushion block performance variation.
Pad can comprise the reinforcement that adjoins the diaphragm neighboring on annulus, disk or the diaphragm.Generally speaking, pad is the annular with certain annulus width, in addition, caused edge polishing pressure to be applied on the neighboring of substrate by second power is worked through annular gasket, and central polish pressure is applied on the middle body of substrate.The annulus width of pad is preferably between about 1mm and the about 20mm.More preferably between about 2mm and about 10mm, the annulus width of pad most preferably is between about 1mm and the about 5mm annulus width of pad.Even more ideal structure is that the annulus width of pad is approximately between 1mm and the about 2mm, perhaps approximately between 2mm and the about 5mm.
The making material of packing ring can be selected like this, promptly can make rim pressure form desirable transition to central pressure.Pad can be made by incompressible material such as metal material basically, is perhaps made by compressible material such as compressible polymeric material or cohesive material.
Generally speaking, the 3rd pressure chamber that is formed between diaphragm and the carrier frame plate outer surface only forms when substrate is installed in the groove.Preferred construction is that diaphragm comprises the eyelet between the 3rd chamber and groove.Preferred structure is that in the planarization of substrate, pressed gas flows in the groove through eyelet.
In one embodiment, spacing ring is flexibly connecting housing indirectly by carrier frame plate, and carrier frame plate is flexibly connecting housing indirectly by spacing ring.Perhaps, spacing ring and carrier frame plate can directly flexibly connect housing.
In another embodiment, support can be located with respect to polishing pad by means of independent pneumatic or mechanical motion system.
In another embodiment, first, second is independently set up in other pressure toward each other with the 3rd pressure.
In another embodiment, spacing ring is flexibly connecting housing by first barrier film, and carrier frame plate is flexibly connecting housing by second barrier film.In a kind of remodeling of present embodiment, spacing ring is flexibly connecting housing by first ring of being made by flexible material, and carrier frame plate is flexibly connecting housing by second ring of being made by flexible material.Preferred construction is that flexible material is selected from following one group of material: EPDM, EPR and rubber.
In an alternate embodiment, carrier frame plate also is being connected housing by bar with the slot that is used to hold bar, so that transmit revolving force between housing and carrier frame plate.Generally speaking, bar comprises the assembling spheroid that is positioned at its far-end, and slot comprises and is used for holding slidably the cylindrical shell that assembles spheroid.In a kind of remodeling of present embodiment, a plurality of bars and slot are connected to carrier frame plate on the housing.
In another alternate embodiment, spacing ring also is being connected housing by bar with the slot that is used to hold bar, so that transmit revolving force between housing and carrier frame plate.Described bar can comprise the assembling spheroid that is positioned at its far-end, and slot comprises and is used for holding slidably the cylindrical shell that assembles spheroid.Preferred construction is that a plurality of bars and slot are connected to spacing ring on the housing.
In one embodiment, diaphragm comprises at least one hole, and the 3rd chamber only is sealed when substrate is installed on the diaphragm.Perhaps, diaphragm comprises at least one hole, and the 3rd chamber only forms when substrate is installed on the carrier frame plate.
In another embodiment, the pressure on the carrier frame plate is the pressure that is applied on the neighboring of substrate.Carrier frame plate does not contact substrate, but provides stability for it.Perhaps, diaphragm has the reinforcement that is used to transmit mechanical force at its edge.
In another embodiment, comprise the hole in the diaphragm, whether described hole is used for detecting according to the ability that the 3rd chamber produces predetermined magnitude vacuum has substrate to be connected diaphragm.In a kind of remodeling of present embodiment, substrate connects the detection hole and is arranged near the center of diaphragm.In the another kind of present embodiment remodeling, diaphragm is the running stores that need periodic replacement, and it is provided with a plurality of holes, just can unload diaphragm thereby needn't take support apart.The size in hole is approximately between 1mm and the about 10mm.
Generally speaking, pad and membrane combination providing certain elastic force transmission capacity, but do not need substrate is sealed on the diaphragm.
In another embodiment, carrier frame plate also comprises and is used for and will introduces the runner in the 3rd chamber from the 3rd pressure of extraneous source of supply.Preferred construction is, carrier frame plate also comprises the cavity that is arranged in around the runner, is used to polishing fluid that the savings groove is provided, and prevents that polishing fluid is inhaled in the runner when being connected substrate on the diaphragm applying vacuum.Preferred structure is, before polishing operation and afterwards, vacuum is applied in the 3rd chamber, so that substrate is remained on the diaphragm.Most preferred structure is that cavity has cone shape, so that polishing fluid is discharged between cavity and diaphragm and carrier frame plate.
In another embodiment, be provided with substrate dorsal part supporting member, be used at the installation process bearing substrate; Also be provided with a plurality of passages, be used to detect substrate and whether exist.
Aspect another, provide a kind of support that is used in the substrate burnishing device in the present invention.Described support comprises: carrier frame plate; First pressure chamber, it is arranged for producing first downward pressure on carrier frame plate; Diaphragm, it has chip holding surface and is connecting carrier frame plate, and the annular outer peripheral portion of diaphragm is installed on the carrier frame plate, and the inner circular part of diaphragm is separated with carrier frame plate and has been formed second pressure chamber that is used to produce second pressure; Substrate can be installed on the diaphragm on annular outer peripheral portion and inner circular part; The annular outer peripheral portion applies first pressure on the neighboring of substrate, the inner circular part applies second pressure on substrate.
Aspect another, provide a kind of method that is used for semiconductor wafer is implemented complanation in the present invention.Described method mainly comprises: will press against round the spacing ring of wafer on the polishing pad with first pressure; Press against on the polishing pad with the first neighboring part of second pressure wafer; And second inside part that is positioned at part inboard, neighboring on the wafer is pressed against on the polishing pad with the 3rd pressure.
In one embodiment, second pressure is to apply by the mechanical parts that contacts with the peripheral edge portion branch, and the 3rd pressure is the Pneumatic pressure that is applied to wafer backside.In a kind of remodeling of present embodiment, Pneumatic pressure applies by flexible sheet.Pneumatic pressure can be by applying at least a portion that gas is directly pressed against wafer backside surface.
In another embodiment, described method also comprises with multiple pressure a plurality of annular sections that are positioned at part inboard, neighboring on the wafer is pressed against on the polishing pad.
Aspect another, provide the carriage in a kind of CMP of being used in device in the present invention.Described device comprises: plate, and it has outer surface; First pressure chamber, it is used to apply power, so that plate is promoted along predetermined direction; Pad, it is connecting the neighboring of plate; Diaphragm, it is connecting plate by pad, and with plate between across the thickness of pad; And second pressure chamber, it is formed between diaphragm and the plate surface, applying second power, thereby along the 3rd predetermined direction pushing diaphragm.
Aspect another, provide a kind of burnishing device that is used for the polishing substrate surface in the present invention.Described burnishing device comprises rotatable polishing pad and substrate carrier.Substrate carrier comprises: the chip holding part, and it is used to hold substrate and substrate is abutted against the polishing pad location; And substrate pressing piece, it comprises first pressing piece and second pressing piece, first pressing piece abuts against polishing pad and applies first load pressure to the marginal portion of substrate, and second pressing piece abuts against polishing pad and applies second load pressure different with first load pressure to the middle body of substrate.
In one embodiment, burnishing device also comprises: spacing ring, and it is around wafer carrier; And the spacing ring pressing piece, it abuts against polishing pad and apply the 3rd load pressure on spacing ring.Preferred construction is that first, second and the 3rd load pressure can be regulated independently of one another.
Aspect another, provide a kind of burnishing device that is used for the polishing substrate surface in the present invention.Described burnishing device comprises rotatable polishing pad and substrate carrier.Substrate carrier comprises: the chip holding part, and it is used to hold substrate and substrate is abutted against the polishing pad location; And substrate pressing piece, it comprises first pressing piece and second pressing piece, first pressing piece abuts against polishing pad and applies first load pressure to the marginal portion of substrate, second pressing piece abuts against polishing pad and applies second load pressure to the middle body of substrate, and wherein first and second load pressures differ from one another.
In one embodiment, burnishing device also comprises: spacing ring, and it is around wafer carrier; And the spacing ring pressing piece, it abuts against polishing pad and apply the 3rd load pressure on spacing ring.Preferred construction is that first, second and the 3rd load pressure can be regulated independently of one another.
Aspect another, provide a kind of burnishing device that is used for the polishing substrate surface in the present invention.Described burnishing device comprises rotatable polishing pad and substrate carrier.Substrate carrier comprises: the chip holding part, and it is used to hold substrate and substrate is abutted against the polishing pad location; And the substrate pressing piece, it has: first pressing piece, and it abuts against polishing pad and applies first load pressure to the marginal portion of substrate, second pressing piece, it abuts against polishing pad and applies a plurality of different load pressures to the middle section of substrate.
In one embodiment, second pressing piece comprises a plurality of substantially concentric pressing pieces, they each abut against polishing pad respectively and on the regional area of substrate, apply load pressure.In a kind of remodeling of present embodiment, in the pressing piece of a plurality of essentially concentrics each comprises that respectively one is positioned at pressure chamber at least one position by what elastic surface formed, after pressure air was introduced in the chamber, elastic surface was by being pressed on the substrate, to provide load.In a kind of remodeling of present embodiment, burnishing device comprises that also being built in each elasticity pushes diaphragm between surface and the substrate.Generally speaking, diaphragm is selected from following one group of material: EPDM, EPR and rubber.
Preferred construction is, built-in diaphragm has formed the surface portion in an outside pressure chamber, and the outside pressure chamber is used for receiving pressure from the ambient pressure air supplies, and abuts against polishing pad and apply load force to substrate.Preferred structure is, built-in diaphragm has formed the surface portion in an outside pressure chamber, and the outside pressure chamber is used for receiving pressure from the ambient pressure air supplies, and abuts against polishing pad and apply load force to substrate; In the pressing piece of a plurality of essentially concentrics each all is contained in the outside pressure chamber.Most preferred structure is, the load pressure that the outside pressure chamber applies can be added the load pressure of going up one of a plurality of pressing pieces respectively, so that the load pressure in the zones of different can be regulated separately, and the outside pressure chamber can make the pressure jump across the pressure chamber border minimize.
In another embodiment, at least one in a plurality of substantially concentric pressing pieces comprises the general toroidal part, and it abuts against on-chip general toroidal zone and applies load pressure.Preferred construction is, at least one in a plurality of substantially concentric pressing pieces comprises the general toroidal part, and it abuts against on-chip general toroidal zone and applies load pressure; And in a plurality of substantially concentric pressing pieces one comprises the circular part, and it abuts against on-chip circular zone and applies load pressure.
Aspect another, provide a kind of substrate carrier that is used for abutting against the polishing pad polishing substrate in the present invention at the CMP instrument.Described carriage comprises: the chip holding part, and it is used to hold substrate; The substrate pressing piece, it is used for substrate by being pressed in polishing pad, and the substrate pressing piece comprises: first pressing piece, it abuts against polishing pad and applies first load pressure to the marginal portion of substrate; Second pressing piece, it abuts against polishing pad and applies a plurality of different load pressures to the middle section of substrate.
In one embodiment, second pressing piece comprises a plurality of substantially concentric pressing pieces, they each abut against polishing pad respectively and on the regional area of substrate, apply load pressure.In the pressing piece of a plurality of essentially concentrics each can comprise that respectively one is formed on pressure chamber at least one position by elastic surface, and after pressure air was introduced in the chamber, elastic surface was by being pressed on the substrate, to provide load.
Aspect another, provide a kind of method that is used for semiconductor wafer is implemented complanation in the present invention.Described method mainly comprises: abut against the fringe region that polishing pad is pushed semiconductor wafer with first load pressure; And abut against polishing pad with multiple different load pressure and push a plurality of concentric regions parts that are positioned at the fringe region inboard on the semiconductor wafer.
In one embodiment, described method comprises that also abutting against polishing pad with the 3rd load pressure pushes spacing ring around wafer.In a kind of remodeling of present embodiment, the load pressure that is made of Pneumatic pressure applies by flexible sheet.
As a kind of selection, can be by making gas directly by two applying described Pneumatic pressure at least a portion that is pressed in wafer backside surface.
According to an aspect of the present invention, provide a kind of rubbing head, its be used for will have the substrate on surface be positioned at the surface of the polishing pad of burnishing device so that substrate is processed and is removed material from substrate.Described rubbing head comprises: carrier frame plate, and it has outer surface; The annular primary diaphragm, it is connecting carrier frame plate, primary diaphragm have be used to hold the receiving surface of substrate and be used to be sealed in the substrate dorsal part so as between substrate dorsal part and carrier frame plate outer surface formation first chamber antelabium; And secondary diaphragm, it is placed in primary diaphragm top, secondary diaphragm is connecting carrier frame plate so that between the inner surface of secondary diaphragm and carrier frame plate outer surface formation second chamber.In polishing operation, introduce pressure fluid in second chamber and will cause that second chamber outwards expands, so that on the part of substrate dorsal part, apply power, thereby abut against the surface that polishing pad is pushed on-chip predetermined area.Described predetermined area is proportional with the pressure of introducing the fluid in second chamber.
In one embodiment, the low pressure fluid of fluid that pressure ratio is introduced in second chamber is introduced in first chamber, pushes substrate surface to abut against polishing pad.In the present embodiment, predetermined area is proportional with the pressure reduction of introducing the fluid in first chamber and second chamber.
In another embodiment, secondary diaphragm comprises side edge portions and bottom surface section, and wherein the hardness of side edge portions is higher than the hardness of bottom surface section.Perhaps, the thickness of bottom surface section is less than the thickness of side edge portions.
In another embodiment, primary diaphragm extends across the outer surface of carrier frame plate basically, and the pressure fluid that is introduced in second chamber will cause that second chamber applies power on primary diaphragm, push on-chip part surface with predetermined area thereby abut against polishing pad.
Aspect another, provide a kind of method and a kind of semiconductor chip that polishes according to this method that utilizes previously described burnishing device polishing substrate surface in the present invention.Said method comprising the steps of: the primary diaphragm that annular (i) is set, it is connecting carrier frame plate, and primary diaphragm has and is used to hold the receiving surface of substrate and is used to be sealed in the substrate dorsal part so that form the antelabium in first chamber between substrate dorsal part and carrier frame plate outer surface; Secondary diaphragm (ii) is set, and it is placed in primary diaphragm top, and secondary diaphragm is connecting carrier frame plate, so as between the inner surface of secondary diaphragm and carrier frame plate outer surface formation second chamber; (iii) substrate is positioned on the receiving surface of primary diaphragm; (iv) pressure fluid is introduced in second chamber, on the part of substrate dorsal part, is applied power, can abut against the surface that polishing pad is pushed on-chip predetermined area like this to cause second chamber, thus with substrate surface by being pressed on the polishing pad; And (v) make between carriage and the polishing pad and form relative motion, with the polishing substrate surface.Generally speaking, the pressure of pressure fluid is selected like this, promptly can provide desirable predetermined area.
In one embodiment, that substrate surface is further comprising the steps of by the step that is pressed on the polishing pad: as the low pressure fluid of fluid that pressure ratio is introduced in second chamber to be introduced in first chamber, pushed substrate surface to abut against polishing pad.Like this, predetermined area is proportional with the pressure reduction of introducing the pressure fluid in first chamber and second chamber, and the pressure of pressure fluid selected like this, promptly can provide desirable predetermined area.
Aspect another, provide a kind of rubbing head in the present invention, its substrate that is used for having the surface is positioned at the surface of the polishing pad of burnishing device, so that substrate is processed and removed material from substrate.Described rubbing head comprises: carrier frame plate, and it has outer surface, and described outer surface has neighboring and middle body; Pad, it is connecting the neighboring of carrier frame plate; And ring film, it has the receiving surface that is used to hold substrate, the outward flange of ring film is connecting the neighboring of carrier frame plate outer surface by pad, the inward flange of ring film is connecting the middle body of carrier frame plate outer surface, between ring film and the carrier frame plate outer surface across the thickness of pad, thereby between diaphragm and carrier frame plate outer surface, form annular chamber.In polishing operation, the pressure fluid of introducing in the annular chamber will cause that annular chamber outwards expands, so that apply power on the part of substrate dorsal part, thereby abut against the surface that polishing pad is pushed on-chip predetermined area.Described predetermined area is proportional with the pressure of introducing the fluid in the annular chamber.
In one embodiment, the receiving surface of ring film is sealed in the substrate dorsal part, so that between the receiving surface of substrate dorsal part, ring film and carrier frame plate outer surface, form central chamber, and the low pressure fluid of pressure fluid that pressure ratio is introduced in the annular chamber is introduced in the central chamber, pushes substrate surface to abut against polishing pad.In this embodiment, predetermined area is proportional with the pressure reduction of introducing the fluid in annular chamber and the central chamber.
In another embodiment, ring film comprises side edge portions and bottom surface section, and wherein the hardness of side edge portions is higher than the hardness of bottom surface section.Perhaps, the thickness of bottom surface section is less than the thickness of side edge portions.
Aspect another, provide a kind of method and a kind of semiconductor chip that polishes according to this method that utilizes previously described burnishing device polishing substrate surface in the present invention.Said method comprising the steps of: ring film (i) is set, it has the receiving surface that is used to hold substrate, the outward flange of ring film is connecting the neighboring of carrier frame plate outer surface by pad, the inward flange of ring film is connecting the middle body of carrier frame plate outer surface, between ring film and the carrier frame plate outer surface across the thickness of pad, thereby between diaphragm and carrier frame plate outer surface, form annular chamber; (ii) substrate is positioned on the receiving surface of ring film; (iii) pressure fluid is introduced in the annular chamber, on the part of substrate dorsal part, applied power to cause annular chamber, thereby abut against the surface that polishing pad is pushed on-chip predetermined area; And (iv) make between carriage and the polishing pad and form relative motion, with the polishing substrate surface.Generally speaking, the pressure of pressure fluid is selected like this, promptly can provide desirable predetermined area.
In one embodiment, the receiving surface of ring film is sealed in the substrate dorsal part, so that between the receiving surface of substrate dorsal part, ring film and carrier frame plate outer surface, form central chamber, and it is substrate surface is further comprising the steps of by the step that is pressed on the polishing pad: as the low pressure fluid of pressure fluid that pressure ratio is introduced in the annular chamber to be introduced in the central chamber, pushed substrate surface to abut against polishing pad.Like this, predetermined area is proportional with the pressure reduction of introducing the fluid in annular chamber and the central chamber, and the pressure of pressure fluid selected like this, promptly can provide desirable predetermined area.
The front to specific embodiment of the present invention description for explanation and illustrative purposes and present.Can not think that the present invention will retrain or be limited in the disclosed concrete form, and under the guidance of obvious content in the above, can make many modifications and variations.Selection of the foregoing description and description are in order to explain principle of the present invention and practical application mode thereof best, thereby make those of ordinary skill in the art to use the present invention best and be suitable for the various remodeling of certain applications.Can think that scope of the present invention will be by claim and equivalent thereof and determine.
Claims (133)
1. one kind is used for substrate is remained on support on the substrate burnishing device, comprising:
Housing;
Spacing ring, it is flexibly connecting described housing;
First pressure chamber, it is used to apply first power, so that promote described spacing ring along first predetermined direction with respect to described housing;
Carrier frame plate, it has outer surface, and is flexibly connecting described housing;
Second pressure chamber, it is used to apply second power, so that promote described spacing ring along second predetermined direction with respect to described housing;
Described spacing ring is around the part of described carrier frame plate, and limits a circular groove;
Pad, it is connecting the neighboring of described carrier frame plate outer surface in described spacing ring circular groove;
Diaphragm, it is connecting described carrier frame plate by described pad, and is arranged in the described circular groove, between described diaphragm and the described carrier frame plate outer surface across the thickness of described pad; And
The 3rd pressure chamber, it is formed between described diaphragm and the described carrier frame plate outer surface, is used to apply the 3rd power, so that promote described spacing ring along the 3rd predetermined direction with respect to described housing.
2. support as claimed in claim 1 is characterized in that described pad comprises annulus.
3. support as claimed in claim 1 is characterized in that described pad comprises disk.
4. support as claimed in claim 1 is characterized in that, described pad comprises the reinforcement that adjoins the diaphragm neighboring on the described diaphragm.
5. support as claimed in claim 1 is characterized in that, described the 3rd pressure chamber that is formed between described diaphragm and the described carrier frame plate outer surface only forms when described substrate is installed in the described groove.
6. support as claimed in claim 5 is characterized in that, described diaphragm comprises the eyelet between described the 3rd chamber and described groove.
7. support as claimed in claim 6 is characterized in that, in the planarization of described substrate, pressed gas flows in the described groove through described eyelet.
8. support as claimed in claim 1 is characterized in that described spacing ring is flexibly connecting described housing indirectly by described carrier frame plate.
9. support as claimed in claim 1 is characterized in that described carrier frame plate is flexibly connecting described housing indirectly by described spacing ring.
10. support as claimed in claim 1 is characterized in that described spacing ring is directly flexibly connecting described housing.
11. support as claimed in claim 1 is characterized in that, described carrier frame plate is directly flexibly connecting described housing.
12. support as claimed in claim 1 is characterized in that, described support can be located with respect to polishing pad by means of independent pneumatic movement system.
13. support as claimed in claim 1 is characterized in that, described support can be located with respect to polishing pad by means of independent mechanical motion system.
14. support as claimed in claim 1 is characterized in that, described pad is the annular with certain annulus width.
15. support as claimed in claim 14, it is characterized in that, cause edge polishing pressure to be applied on the neighboring of described substrate by described second power is worked through described annular gasket, and central polish pressure is applied on the middle body of described substrate.
16. support as claimed in claim 1 is characterized in that, described first, second independently set up in other pressure toward each other with the 3rd pressure.
17. support as claimed in claim 1 is characterized in that, described substrate comprises semiconductor wafer.
18. support as claimed in claim 1 is characterized in that, described diaphragm comprises flexible elastomeric material.
19. support as claimed in claim 1 is characterized in that, described spacing ring is flexibly connecting described housing by first barrier film.
20. support as claimed in claim 1 is characterized in that, described carrier frame plate is flexibly connecting described housing by second barrier film.
21. support as claimed in claim 1 is characterized in that, described spacing ring is flexibly connecting described housing by first ring of being made by flexible material.
22. support as claimed in claim 1 is characterized in that, described carrier frame plate is flexibly connecting described housing by second ring of being made by flexible material.
23. support as claimed in claim 22 is characterized in that, described flexible material is selected from following one group of material: EPDM, EPR and rubber.
24. support as claimed in claim 1 is characterized in that, described spacing ring is flexibly connecting described housing by first barrier film, and described carrier frame plate is flexibly connecting described housing by second barrier film.
25. support as claimed in claim 1 is characterized in that, described carrier frame plate also is being connected described housing by bar with the slot that is used to hold described bar, so that transmit revolving force between described housing and described carrier frame plate.
26. support as claimed in claim 25 is characterized in that, described bar comprises the assembling spheroid that is positioned at its far-end, and described slot comprises the cylindrical shell that is used for holding slidably described assembling spheroid.
27. support as claimed in claim 26 is characterized in that, a plurality of described bars and described slot are connected to described carrier frame plate on the described housing.
28. support as claimed in claim 1 is characterized in that, described spacing ring also is being connected described housing by bar with the slot that is used to hold described bar, so that transmit revolving force between described housing and described carrier frame plate.
29. support as claimed in claim 28 is characterized in that, described bar comprises the assembling spheroid that is positioned at its far-end, and described slot comprises the cylindrical shell that is used for holding slidably described assembling spheroid.
30. support as claimed in claim 29 is characterized in that, a plurality of described bars and described slot are connected to described spacing ring on the described housing.
31. support as claimed in claim 1 is characterized in that, does not have abaculus to be located between described diaphragm and the described substrate, thereby can reduce the deviation between the different process that cause because of the abaculus change of properties.
32. support as claimed in claim 1 is characterized in that, described diaphragm comprises at least one hole, and described the 3rd chamber only is sealed when described substrate is installed on the described diaphragm.
33. support as claimed in claim 1 is characterized in that, described diaphragm comprises at least one hole, and described the 3rd chamber only forms when described substrate is installed on the described carrier frame plate.
34. support as claimed in claim 1 is characterized in that, the annulus width of described pad is approximately between 1mm and the about 20mm.
35. support as claimed in claim 1 is characterized in that, the annulus width of described pad is approximately between 2mm and the about 10mm.
36. support as claimed in claim 1 is characterized in that, the annulus width of described pad is approximately between 1mm and the about 5mm.
37. support as claimed in claim 1 is characterized in that, the annulus width of described pad is approximately between 1mm and the about 2mm.
38. support as claimed in claim 1 is characterized in that, the annulus width of described pad is approximately between 2mm and the about 5mm.
39. support as claimed in claim 1 is characterized in that, the pressure on the described carrier frame plate is the pressure that is applied on the neighboring of described substrate.
40. support as claimed in claim 1 is characterized in that, described carrier frame plate does not contact described substrate, but provides stability for it.
41. support as claimed in claim 1 is characterized in that, described diaphragm has the reinforcement that is used to transmit mechanical force at its edge.
42. support as claimed in claim 1 is characterized in that, described pad is made by metal material.
43. support as claimed in claim 1 is characterized in that, described pad comprises incompressible basically material.
44. support as claimed in claim 1 is characterized in that, described pad comprises compressible polymeric material.
45. support as claimed in claim 1 is characterized in that, described pad comprises cohesive material.
46. support as claimed in claim 1 is characterized in that, described pad is made by the material of such selection, promptly can make rim pressure form desirable transition to central pressure.
47. support as claimed in claim 1 is characterized in that, comprises the hole in the described diaphragm, whether described hole is used for detecting according to the ability that described the 3rd chamber produces predetermined magnitude vacuum has substrate to be connected diaphragm.
48. support as claimed in claim 1 is characterized in that, described substrate connects the detection hole and is arranged near the center of described diaphragm.
49. support as claimed in claim 1 is characterized in that, described pad and described membrane combination providing certain elastic force transmission capacity, but do not need substrate is sealed on the diaphragm.
50. support as claimed in claim 1 is characterized in that, described first, second can be normal pressure independent of each other with the 3rd pressure or bear (vacuum) pressure.
51. support as claimed in claim 1 is characterized in that, the size in described hole is approximately between 1mm and the about 10mm.
52. support as claimed in claim 1 is characterized in that, described diaphragm is the running stores that need periodic replacement, and it is provided with a plurality of holes, just can unload diaphragm thereby needn't take described support apart.
53. support as claimed in claim 1 is characterized in that, described carrier frame plate also comprises described the 3rd pressure that is used for from extraneous source of supply and introduces the runner in described the 3rd chamber.
54. support as claimed in claim 53, it is characterized in that, described carrier frame plate also comprises the cavity that is arranged in around the described runner, is used to polishing fluid that the savings groove is provided, and prevents that described polishing fluid is inhaled in the described runner when being connected described substrate on the described diaphragm applying vacuum.
55. support as claimed in claim 1 is characterized in that, before polishing operation and afterwards, described vacuum is applied in described the 3rd chamber, so that described substrate is remained on the described diaphragm.
56. support as claimed in claim 54 is characterized in that, described cavity has cone shape, so that described polishing fluid is discharged between described cavity and described diaphragm and described carrier frame plate.
57. support as claimed in claim 1 is characterized in that, is provided with substrate dorsal part supporting member, is used at the installation process bearing substrate.
58. whether support as claimed in claim 1 is characterized in that, is provided with a plurality of passages, be used to detect substrate and exist.
59. a support that is used in the substrate burnishing device comprises:
Carrier frame plate;
First pressure chamber, it is arranged for producing first downward pressure on described carrier frame plate;
Diaphragm, it is connecting described carrier frame plate, described diaphragm has the chip holding surface that is used to hold substrate, and the annular outer peripheral portion of described diaphragm is installed on the described carrier frame plate, and the inner circular of described diaphragm part is separated with described carrier frame plate and formed second pressure chamber that is used to produce second pressure;
Described substrate can be installed on the described diaphragm on described annular outer peripheral portion and described inner circular part;
Described annular outer peripheral portion applies described first pressure on the neighboring of described substrate, described inner circular part applies described second pressure on described substrate.
60. a method that is used for semiconductor wafer is implemented complanation, described method comprises:
To press against round the spacing ring of described wafer on the polishing pad with first pressure;
Press against on the described polishing pad with the first neighboring part of second pressure described wafer; And
With the 3rd pressure second inside part that is positioned at part inboard, neighboring on the described wafer is pressed against on the described polishing pad.
61. method as claimed in claim 60 is characterized in that, described second pressure is by dividing the mechanical parts that contacts to apply with described peripheral edge portion;
Described the 3rd pressure is the Pneumatic pressure that is applied to described wafer backside.
62. method as claimed in claim 61 is characterized in that, described Pneumatic pressure applies by flexible sheet.
62. method as claimed in claim 61 is characterized in that, described Pneumatic pressure is by applying at least a portion that gas is directly pressed against described wafer backside surface.
63. method as claimed in claim 60 also comprises with multiple pressure a plurality of annular sections that are positioned at part inboard, described neighboring on the described wafer are pressed against on the described polishing pad.
64. a semiconductor wafer, it is by the described method of claim 60 and flattened.
65. a carriage that is used in chemically mechanical polishing (CMP) device comprises:
Plate, it has outer surface;
First pressure chamber, it is used to apply power, so that described plate is promoted along predetermined direction;
Pad, it is connecting the neighboring of described plate;
Diaphragm, it is connecting described plate by described pad, and with described plate between across the thickness of described pad; And
Second pressure chamber, it is formed between described diaphragm and the described plate surface, applying second power, thereby pushes described diaphragm along the 3rd predetermined direction.
66. a burnishing device that is used for the polishing substrate surface comprises:
Rotatable polishing pad; And
Substrate carrier, it comprises:
The chip holding part, it is used to hold substrate and substrate is abutted against the polishing pad location; And
The substrate pressing piece, it comprises first pressing piece and second pressing piece, described first pressing piece abuts against described polishing pad and applies first load pressure to the marginal portion of described substrate, described second pressing piece abuts against described polishing pad and applies second load pressure to the middle body of described substrate, and wherein said first and second load pressures differ from one another.
67., also comprise as the described burnishing device of claim 66:
Spacing ring, it is around described wafer carrier; And
The spacing ring pressing piece, it abuts against described polishing pad and apply the 3rd load pressure on described spacing ring.
68., it is characterized in that described first, second can be regulated independently of one another with the 3rd load pressure as the described burnishing device of claim 67.
69., it is characterized in that described substrate comprises semiconductor wafer as the described burnishing device of claim 66, described device also comprises:
Spacing ring, it is around described wafer carrier; And
The spacing ring pressing piece, it abuts against described polishing pad and apply the 3rd load pressure on described spacing ring;
Described first, second can be regulated independently of one another with the 3rd load pressure.
70. a burnishing device that is used for the polishing substrate surface comprises:
Rotatable polishing pad; And
Substrate carrier, it comprises:
The chip holding part, it is used to hold substrate and substrate is abutted against the polishing pad location; And
The substrate pressing piece, it comprises first pressing piece and second pressing piece, described first pressing piece abuts against described polishing pad and applies first load pressure to the marginal portion of described substrate, described second pressing piece abuts against described polishing pad and applies second load pressure to the middle body of described substrate, and wherein said first and second load pressures differ from one another.
71., also comprise as the described burnishing device of claim 70:
Spacing ring, it is around described wafer carrier; And
The spacing ring pressing piece, it abuts against described polishing pad and apply the 3rd load pressure on described spacing ring.
72., it is characterized in that described first, second can be regulated independently of one another with the 3rd load pressure as the described burnishing device of claim 71.
73., it is characterized in that described substrate comprises semiconductor wafer as the described burnishing device of claim 70, described device also comprises:
Spacing ring, it is around described wafer carrier; And
The spacing ring pressing piece, it abuts against described polishing pad and apply the 3rd load pressure on described spacing ring;
Described first, second can be regulated independently of one another with the 3rd load pressure.
74. a burnishing device that is used for the polishing substrate surface comprises:
Rotatable polishing pad; And
Substrate carrier, it comprises:
The chip holding part, it is used to hold substrate and substrate is abutted against the polishing pad location; And
The substrate pressing piece, it comprises: first pressing piece, it abuts against described polishing pad and applies first load pressure to the marginal portion of described substrate; Second pressing piece, it abuts against described polishing pad and applies a plurality of different load pressures to the middle section of described substrate.
75., it is characterized in that described second pressing piece comprises a plurality of substantially concentric pressing pieces as the described burnishing device of claim 74, they each abut against described polishing pad respectively and on the regional area of described substrate, apply load pressure.
76. as the described burnishing device of claim 75, it is characterized in that, in the pressing piece of described a plurality of essentially concentrics each comprises that respectively one is formed on pressure chamber at least one position by elastic surface, after pressure air is introduced in the described chamber, described elastic surface is by being pressed on the described substrate, to provide described load.
77. as the described burnishing device of claim 76, also comprise be built in each described elasticity push the surface and described substrate between diaphragm.
78. as the described burnishing device of claim 77, it is characterized in that, described built-in diaphragm has formed the surface portion in an outside pressure chamber, and described outside pressure chamber is used for receiving pressure from the ambient pressure air supplies, and abuts against described polishing pad and apply load force to described substrate.
79. as the described burnishing device of claim 77, it is characterized in that, described built-in diaphragm has formed the surface portion in an outside pressure chamber, and described outside pressure chamber is used for receiving pressure from the ambient pressure air supplies, and abuts against described polishing pad and apply load force to described substrate; In the pressing piece of described a plurality of essentially concentrics each all is contained in the described outside pressure chamber.
80. as the described burnishing device of claim 79, it is characterized in that, the load pressure that described outside pressure chamber applies can be added the load pressure of one of the above a plurality of pressing piece respectively, so that the load pressure in the zones of different can be regulated separately, and described outside pressure chamber can make the pressure jump across the pressure chamber border minimize.
81., it is characterized in that at least one in described a plurality of substantially concentric pressing pieces comprises the general toroidal part as the described burnishing device of claim 75, it abuts against described on-chip general toroidal zone and applies load pressure.
82., it is characterized in that one in described a plurality of substantially concentric pressing pieces comprises the circular part as the described burnishing device of claim 75, it abuts against described on-chip circular zone and applies load pressure.
83., it is characterized in that at least one in described a plurality of substantially concentric pressing pieces comprises the general toroidal part as the described burnishing device of claim 75, it abuts against described on-chip general toroidal zone and applies load pressure; And in described a plurality of substantially concentric pressing piece one comprises the circular part, and it abuts against described on-chip circular zone and applies load pressure.
84., it is characterized in that described diaphragm is selected from following one group of material: EPDM, EPR and rubber as the described burnishing device of claim 75.
85., it is characterized in that described second pressing piece comprises a plurality of substantially concentric pressing pieces as the described burnishing device of claim 74, they each abut against described polishing pad respectively and on the regional area of described substrate, apply load pressure;
In the pressing piece of described a plurality of essentially concentrics each comprises that respectively one is formed on pressure chamber at least one position by elastic surface, and after pressure air was introduced in the described chamber, described elastic surface was by being pressed on the described substrate, to provide described load;
Described burnishing device also comprise be built in each described elasticity push the surface and described substrate between diaphragm;
Described built-in diaphragm has formed the surface portion in an outside pressure chamber, and described outside pressure chamber is used for receiving pressure from the ambient pressure air supplies, and abuts against described polishing pad and apply load force to described substrate; In the pressing piece of described a plurality of essentially concentrics each all is contained in the described outside pressure chamber;
The load pressure that described outside pressure chamber applies can be added the load pressure of one of the above a plurality of pressing piece respectively, so that the load pressure in the zones of different can be regulated separately, and described outside pressure chamber can make the pressure jump across the pressure chamber border minimize;
Described substrate is selected from following one group of substrate: semiconductor wafer, glass, liquid crystal display (LCD) plate, plate surface, coating surface and their composition;
Described elastic surface and described diaphragm are formed by the material that is selected from following a group respectively: EPDM, EPR and rubber.
86. a substrate carrier that is used for abutting against at the CMP instrument polishing pad polishing substrate, described carriage comprises:
The chip holding part, it is used to hold described substrate;
The substrate pressing piece, it is used for described substrate by being pressed in described polishing pad, and described substrate pressing piece comprises: first pressing piece, it abuts against described polishing pad and applies first load pressure to the marginal portion of described substrate; Second pressing piece, it abuts against described polishing pad and applies a plurality of different load pressures to the middle section of described substrate.
87., it is characterized in that described second pressing piece comprises a plurality of substantially concentric pressing pieces as the described burnishing device of claim 86, they each abut against described polishing pad respectively and on the regional area of described substrate, apply load pressure.
88. as the described burnishing device of claim 87, it is characterized in that, in the pressing piece of described a plurality of essentially concentrics each comprises that respectively one is formed on pressure chamber at least one position by elastic surface, after pressure air is introduced in the described chamber, described elastic surface is by being pressed on the described substrate, to provide described load.
89. a method that is used for semiconductor wafer is implemented complanation, described method comprises:
Abut against the fringe region that polishing pad is pushed described semiconductor wafer with first load pressure; And
Abut against polishing pad with multiple different load pressure and push a plurality of concentric regions parts that are positioned at described fringe region inboard on the described semiconductor wafer.
90., comprise that also abutting against polishing pad with the 3rd load pressure pushes spacing ring around described wafer as the described method of claim 89.
91., it is characterized in that the described load pressure that is made of Pneumatic pressure applies by flexible sheet as the described method of claim 89.
92., it is characterized in that described Pneumatic pressure is by gas is directly applied at least a portion by the back surface that is pressed in described wafer as the described method of claim 91.
93. a semiconductor wafer, it is by the described method of claim 89 and flattened.
94. a rubbing head, it is used for having the polishing pad that surperficial substrate is positioned at burnishing device, and described rubbing head comprises:
Carrier frame plate, it has outer surface;
The annular primary diaphragm, it is connecting described carrier frame plate, described primary diaphragm have be used to hold the receiving surface of substrate and be used to be sealed in the substrate dorsal part so as between substrate dorsal part and carrier frame plate outer surface formation first chamber antelabium;
Secondary diaphragm, it is placed in primary diaphragm top, described secondary diaphragm is connecting described carrier frame plate, so as between the inner surface of secondary diaphragm and carrier frame plate outer surface formation second chamber;
In polishing operation, introduce pressure fluid in second chamber and will cause that second chamber outwards expands, so that on the part of substrate dorsal part, apply power, thereby abut against the surface that polishing pad is pushed on-chip predetermined area.
95., it is characterized in that described predetermined area is proportional with the pressure of introducing the fluid in second chamber as the described rubbing head of claim 94.
96., it is characterized in that the low pressure fluid of fluid that pressure ratio is introduced in second chamber is introduced in first chamber, pushes substrate surface to abut against polishing pad as the described rubbing head of claim 94.
97., it is characterized in that described predetermined area is proportional with the pressure reduction of introducing the fluid in first chamber and second chamber as the described rubbing head of claim 96.
98., it is characterized in that described secondary diaphragm comprises side edge portions and bottom surface section as the described rubbing head of claim 94, wherein side edge portions has first hardness, bottom surface section has second hardness.
99., it is characterized in that second hardness is lower than first hardness as the described rubbing head of claim 98.
100., it is characterized in that described secondary diaphragm comprises side edge portions and bottom surface section as the described rubbing head of claim 94, wherein the thickness of bottom surface section is less than the thickness of side edge portions.
101. a method of utilizing burnishing device polishing substrate surface, described burnishing device comprise polishing pad, have the rubbing head of carrier frame plate, described carrier frame plate has outer surface, said method comprising the steps of:
Be provided with the annular primary diaphragm, it is connecting described carrier frame plate, described primary diaphragm have be used to hold the receiving surface of substrate and be used to be sealed in the substrate dorsal part so as between substrate dorsal part and carrier frame plate outer surface formation first chamber antelabium;
Secondary diaphragm is set, and it is placed in primary diaphragm top, and described secondary diaphragm is connecting described carrier frame plate, so as between the inner surface of secondary diaphragm and carrier frame plate outer surface formation second chamber;
Substrate is positioned on the receiving surface of primary diaphragm;
Pressure fluid is introduced in second chamber, on the part of substrate dorsal part, is applied power, can abut against the surface that polishing pad is pushed on-chip predetermined area like this to cause second chamber, thus with substrate surface by being pressed on the polishing pad; And
Make between carriage and the polishing pad and form relative motion, with the polishing substrate surface.
102. as the described method of claim 101, it is characterized in that, substrate surface be may further comprise the steps by the step that is pressed on the polishing pad: supply has the pressure fluid of selected pressure in desirable predetermined area.
103. as the described method of claim 101, it is characterized in that, substrate surface is further comprising the steps of by the step that is pressed on the polishing pad: as the low pressure fluid of fluid that pressure ratio is introduced in second chamber to be introduced in first chamber, pushed substrate surface to abut against polishing pad.
104., it is characterized in that described predetermined area is proportional with the pressure reduction of introducing the fluid in first chamber and second chamber as the described method of claim 103; Substrate surface be may further comprise the steps by the step that is pressed on the polishing pad: select to introduce the pressure of the fluid in first chamber and second chamber, to obtain desirable predetermined area.
105. a semiconductor chip, it is by the described method of claim 101 and polished.
106. a rubbing head, it is used for having the polishing pad that surperficial substrate is positioned at burnishing device, and described rubbing head comprises:
Carrier frame plate, it has outer surface;
Pad, it is connecting the neighboring of carrier frame plate;
Primary diaphragm, it is connecting carrier frame plate by pad, between described primary diaphragm and the carrier frame plate outer surface across the thickness of described pad, and described primary diaphragm extends across the outer surface of carrier frame plate basically, so that form first chamber between the inner surface of primary diaphragm and carrier frame plate outer surface, primary diaphragm has the receiving surface that is used to hold substrate;
Secondary diaphragm, it is placed in primary diaphragm top, described secondary diaphragm is connecting described carrier frame plate, so as between the inner surface of secondary diaphragm and carrier frame plate outer surface formation second chamber;
In polishing operation, the pressure fluid of introducing in second chamber will cause that second chamber applies power on primary diaphragm, push on-chip part surface with predetermined area thereby abut against polishing pad.
107., it is characterized in that the power that is applied on the secondary diaphragm will cause that secondary diaphragm outwards expands as the described rubbing head of claim 106, thereby by on the inner surface that is pressed in primary diaphragm.
108., it is characterized in that described predetermined area is proportional with the pressure of introducing the fluid in second chamber as the described rubbing head of claim 106.
109., it is characterized in that the low pressure fluid of fluid that pressure ratio is introduced in second chamber is introduced in first chamber as the described rubbing head of claim 106, abut against the part surface that polishing pad is pushed substrate to cause primary diaphragm.
110., it is characterized in that described predetermined area is proportional with the pressure reduction of introducing the fluid in first chamber and second chamber as the described rubbing head of claim 109.
111., it is characterized in that primary diaphragm has certain thickness and comprises and a plurality ofly extends through described thickness and arrive the hole of receiving surface as the described rubbing head of claim 109, described hole is used for to the direct supply pressure fluid of substrate.
112., it is characterized in that quantity, the size and dimension in described a plurality of holes are selected as the described rubbing head of claim 109,, thereby can transmit rotating energy to substrate so that between receiving surface and substrate, form enough frictional force.
113., it is characterized in that described secondary diaphragm comprises side edge portions and bottom surface section as the described rubbing head of claim 106, wherein side edge portions has first hardness, bottom surface section has second hardness.
114., it is characterized in that second hardness is lower than first hardness as the described rubbing head of claim 113.
115., it is characterized in that described secondary diaphragm comprises side edge portions and bottom surface section as the described rubbing head of claim 106, wherein the thickness of bottom surface section is less than the thickness of side edge portions.
116. a method of utilizing burnishing device polishing substrate surface, described burnishing device comprise polishing pad, have the rubbing head of carrier frame plate, described carrier frame plate has outer surface, said method comprising the steps of:
Primary diaphragm is set, and it is connecting carrier frame plate, and described primary diaphragm extends across the outer surface of carrier frame plate basically, so that form first chamber between the inner surface of primary diaphragm and carrier frame plate outer surface, primary diaphragm has the receiving surface that is used to hold substrate;
Secondary diaphragm is set, and it is placed in primary diaphragm top, and described secondary diaphragm is connecting described carrier frame plate, so as between the inner surface of secondary diaphragm and carrier frame plate outer surface formation second chamber;
Substrate is positioned on the receiving surface of primary diaphragm;
Pressure fluid is introduced in second chamber, on primary diaphragm, is applied power, can abut against polishing pad like this and push on-chip a part of surface with predetermined area to cause second chamber, thus with substrate surface by being pressed on the polishing pad; And
Make between carriage and the polishing pad and form relative motion, with the polishing substrate surface.
117. as the described method of claim 116, it is characterized in that, substrate surface be may further comprise the steps by the step that is pressed on the polishing pad: supply has the pressure fluid of selected pressure in desirable predetermined area.
118. as the described method of claim 116, it is characterized in that, substrate surface is further comprising the steps of by the step that is pressed on the polishing pad: as the low pressure fluid of fluid that pressure ratio is introduced in second chamber to be introduced in first chamber, abutted against the part surface that polishing pad is pushed substrate to cause primary diaphragm.
119., it is characterized in that described predetermined area is proportional with the pressure reduction of introducing the fluid in first chamber and second chamber as the described method of claim 118; Substrate surface be may further comprise the steps by the step that is pressed on the polishing pad: select to introduce the pressure of the fluid in first chamber and second chamber, to obtain desirable predetermined area.
120. a semiconductor chip, it is by the described method of claim 116 and polished.
121. a rubbing head, it is used for having the polishing pad that surperficial substrate is positioned at burnishing device, and described rubbing head comprises:
Carrier frame plate, it has outer surface, and described outer surface has neighboring and middle body;
Pad, it is connecting the neighboring of carrier frame plate; And
Ring film, it has the receiving surface that is used to hold substrate, the outward flange of described ring film is connecting the neighboring of carrier frame plate outer surface by pad, the inward flange of ring film is connecting the middle body of carrier frame plate outer surface, between ring film and the carrier frame plate outer surface across the thickness of described pad, thereby between diaphragm and carrier frame plate outer surface, form annular chamber;
In polishing operation, the pressure fluid of introducing in the annular chamber will cause that annular chamber outwards expands, so that apply power on the part of substrate dorsal part, thereby abut against the surface that polishing pad is pushed on-chip predetermined area.
122., it is characterized in that described predetermined area is proportional with the pressure of introducing the fluid in the annular chamber as the described rubbing head of claim 121.
123. as the described rubbing head of claim 121, it is characterized in that, the receiving surface of described ring film is sealed in the substrate dorsal part, so that between the receiving surface of substrate dorsal part, ring film and carrier frame plate outer surface, form central chamber, and the low pressure fluid of pressure fluid that pressure ratio is introduced in the annular chamber is introduced in the central chamber, pushes substrate surface to abut against polishing pad.
124., it is characterized in that described predetermined area is proportional with the pressure reduction of introducing the fluid in annular chamber and the central chamber as the described rubbing head of claim 123.
125., it is characterized in that described ring film comprises side edge portions and bottom surface section as the described rubbing head of claim 121, wherein side edge portions has first hardness, bottom surface section has second hardness.
126., it is characterized in that second hardness is lower than first hardness as the described rubbing head of claim 125.
127., it is characterized in that described secondary diaphragm comprises side edge portions and bottom surface section as the described rubbing head of claim 121, wherein the thickness of bottom surface section is less than the thickness of side edge portions.
128. a method of utilizing burnishing device polishing substrate surface, described burnishing device comprise polishing pad, have the rubbing head of carrier frame plate, the outer surface of described carrier frame plate has neighboring and middle body, said method comprising the steps of:
Ring film is set, it has the receiving surface that is used to hold substrate, the outward flange of described ring film is connecting the neighboring of carrier frame plate outer surface by pad, the inward flange of ring film is connecting the middle body of carrier frame plate outer surface, between ring film and the carrier frame plate outer surface across the thickness of described pad, thereby between diaphragm and carrier frame plate outer surface, form annular chamber;
Substrate is positioned on the receiving surface of ring film;
Pressure fluid is introduced in the annular chamber, on the part of substrate dorsal part, applied power to cause annular chamber, thereby abut against the surface that polishing pad is pushed on-chip predetermined area; And
Make between carriage and the polishing pad and form relative motion, with the polishing substrate surface.
129. as the described method of claim 128, it is characterized in that, substrate surface be may further comprise the steps by the step that is pressed on the polishing pad: supply has the pressure fluid of selected pressure in desirable predetermined area.
130. as the described method of claim 128, it is characterized in that, the receiving surface of described ring film is sealed in the substrate dorsal part, so that between the receiving surface of substrate dorsal part, ring film and carrier frame plate outer surface, form central chamber, and it is substrate surface is further comprising the steps of by the step that is pressed on the polishing pad: as the low pressure fluid of pressure fluid that pressure ratio is introduced in the annular chamber to be introduced in the central chamber, pushed substrate surface to abut against polishing pad.
131. as the described method of claim 130, it is characterized in that, described predetermined area is proportional with the pressure reduction of introducing the fluid in annular chamber and the central chamber, and it is substrate surface is further comprising the steps of by the step that is pressed on the polishing pad: as to select to introduce the pressure of the pressure fluid in annular chamber and the central chamber, to obtain desirable predetermined area.
132. a semiconductor chip, it is by the described method of claim 128 and polished.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US20421200P | 2000-05-12 | 2000-05-12 | |
| US09/570,369 US6558232B1 (en) | 2000-05-12 | 2000-05-12 | System and method for CMP having multi-pressure zone loading for improved edge and annular zone material removal control |
| US09/570,370 | 2000-05-12 | ||
| US09/570,370 US6506105B1 (en) | 2000-05-12 | 2000-05-12 | System and method for pneumatic diaphragm CMP head having separate retaining ring and multi-region wafer pressure control |
| US60/204,212 | 2000-05-12 | ||
| US09/570,369 | 2000-05-12 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100881994A Division CN100433269C (en) | 2000-05-12 | 2001-05-11 | Pneumatic diaphragm head having independent retaining ring and multi-region pressure control, and method to use the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1440321A true CN1440321A (en) | 2003-09-03 |
| CN1179821C CN1179821C (en) | 2004-12-15 |
Family
ID=27394636
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100881994A Expired - Fee Related CN100433269C (en) | 2000-05-12 | 2001-05-11 | Pneumatic diaphragm head having independent retaining ring and multi-region pressure control, and method to use the same |
| CNB018121713A Expired - Fee Related CN1179821C (en) | 2000-05-12 | 2001-05-11 | Pneumatic diaphragm head having independent retaining ring and multi-region pressure control, and method to use the same |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100881994A Expired - Fee Related CN100433269C (en) | 2000-05-12 | 2001-05-11 | Pneumatic diaphragm head having independent retaining ring and multi-region pressure control, and method to use the same |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1284840A2 (en) |
| JP (1) | JP2003533359A (en) |
| KR (1) | KR100811172B1 (en) |
| CN (2) | CN100433269C (en) |
| AU (1) | AU2001259745A1 (en) |
| WO (1) | WO2001087541A2 (en) |
Cited By (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101927448A (en) * | 2009-06-24 | 2010-12-29 | 硅电子股份公司 | The method of local polishing semiconductor wafer |
| CN102172887A (en) * | 2011-02-16 | 2011-09-07 | 清华大学 | Polishing head |
| CN103817591A (en) * | 2012-11-16 | 2014-05-28 | 有研半导体材料股份有限公司 | Fragment treatment device for polishing machinery |
| CN104044057A (en) * | 2004-11-01 | 2014-09-17 | 株式会社荏原制作所 | Polishing device |
| CN104114323A (en) * | 2012-02-15 | 2014-10-22 | 信越半导体株式会社 | Polishing head and polishing device |
| CN104347467A (en) * | 2013-07-23 | 2015-02-11 | Ap系统股份有公司 | Substrate holding module and substrate processing device comprising same |
| CN104347468A (en) * | 2013-07-23 | 2015-02-11 | Ap系统股份有限公司 | Substrate holder module and apparatus for treatmenting substrate having the same |
| CN105058225A (en) * | 2015-07-07 | 2015-11-18 | 武汉新芯集成电路制造有限公司 | Grinding pad fixing device and chemical machinery grinder |
| CN105081961A (en) * | 2014-05-14 | 2015-11-25 | 株式会社荏原制作所 | Polishing device |
| CN105397574A (en) * | 2015-12-09 | 2016-03-16 | 浙江工业大学 | Hydrodynamic pressure suspension polishing device with machining clearance capable of being adjusted |
| CN105479325A (en) * | 2015-12-30 | 2016-04-13 | 天通吉成机器技术有限公司 | Partition pressing device and method suitable for large single-face grinding polishing device |
| CN106863110A (en) * | 2015-10-16 | 2017-06-20 | 应用材料公司 | Corrosion-resistant retaining ring |
| CN108145586A (en) * | 2018-01-03 | 2018-06-12 | 京东方科技集团股份有限公司 | Polissoir and polishing method |
| CN108604543A (en) * | 2016-01-20 | 2018-09-28 | 应用材料公司 | The carrier of small-sized pad for chemically mechanical polishing |
| CN109202697A (en) * | 2018-11-20 | 2019-01-15 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | The application method of rubbing head, polissoir and rubbing head |
| CN110352115A (en) * | 2017-03-06 | 2019-10-18 | 应用材料公司 | It is mobile for the spiral and concentric circles of the position CMP particular abrasive (LSP) design |
| CN110802507A (en) * | 2019-11-11 | 2020-02-18 | 上海华力微电子有限公司 | Grinding head and chemical mechanical grinding equipment |
| CN111496598A (en) * | 2020-04-24 | 2020-08-07 | 广东博智林机器人有限公司 | Plane grinding device and plane grinding robot |
| CN111496658A (en) * | 2020-03-13 | 2020-08-07 | 东莞市飞尧科技有限公司 | Light machine is swept to strong adaptability |
| CN111823130A (en) * | 2020-07-17 | 2020-10-27 | 中国科学院微电子研究所 | Polishing head and polishing device |
| CN111922888A (en) * | 2020-08-11 | 2020-11-13 | 西安奕斯伟硅片技术有限公司 | Edge polishing apparatus and polishing method |
| CN112605848A (en) * | 2020-11-29 | 2021-04-06 | 厦门理工学院 | Electromagnetic polishing disk mechanism with adjustable gravity center and polishing method |
| CN112792725A (en) * | 2021-02-03 | 2021-05-14 | 华海清科股份有限公司 | Flexible membrane for chemical mechanical polishing, bearing head and polishing equipment |
| CN113290426A (en) * | 2021-04-15 | 2021-08-24 | 金华博蓝特电子材料有限公司 | Method for improving polishing thickness uniformity of wafer |
| CN113878488A (en) * | 2021-10-18 | 2022-01-04 | 华海清科(北京)科技有限公司 | Chemical mechanical polishing head and polishing system |
| CN114310652A (en) * | 2021-12-30 | 2022-04-12 | 金陵科技学院 | Flexible grinding device for soft and brittle materials |
| CN115008342A (en) * | 2022-06-15 | 2022-09-06 | 安徽禾臣新材料有限公司 | Wafer polishing wax-free pad capable of preventing corner collapse and production process thereof |
| CN115816298A (en) * | 2022-12-29 | 2023-03-21 | 西安奕斯伟材料科技有限公司 | Fixed disc, polishing equipment and polishing method |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6558232B1 (en) | 2000-05-12 | 2003-05-06 | Multi-Planar Technologies, Inc. | System and method for CMP having multi-pressure zone loading for improved edge and annular zone material removal control |
| US6506105B1 (en) | 2000-05-12 | 2003-01-14 | Multi-Planar Technologies, Inc. | System and method for pneumatic diaphragm CMP head having separate retaining ring and multi-region wafer pressure control |
| US6540590B1 (en) | 2000-08-31 | 2003-04-01 | Multi-Planar Technologies, Inc. | Chemical mechanical polishing apparatus and method having a rotating retaining ring |
| TWI246448B (en) * | 2000-08-31 | 2006-01-01 | Multi Planar Technologies Inc | Chemical mechanical polishing (CMP) head, apparatus, and method and planarized semiconductor wafer produced thereby |
| KR100470227B1 (en) * | 2001-06-07 | 2005-02-05 | 두산디앤디 주식회사 | Carrier Head for Chemical Mechanical Polishing |
| JP4353673B2 (en) * | 2002-04-18 | 2009-10-28 | 株式会社荏原製作所 | Polishing method |
| CN100400236C (en) * | 2002-09-27 | 2008-07-09 | 小松电子金属股份有限公司 | Polishing apparatus, polishing head, and polishing method |
| TWI238754B (en) | 2002-11-07 | 2005-09-01 | Ebara Tech Inc | Vertically adjustable chemical mechanical polishing head having a pivot mechanism and method for use thereof |
| US20080032603A1 (en) * | 2006-08-03 | 2008-02-07 | 3M Innovative Properties Company | Sanding tool |
| JP5464820B2 (en) * | 2007-10-29 | 2014-04-09 | 株式会社荏原製作所 | Polishing equipment |
| KR101619416B1 (en) | 2008-03-25 | 2016-05-10 | 어플라이드 머티어리얼스, 인코포레이티드 | Improved carrier head membrane |
| US20120021673A1 (en) * | 2010-07-20 | 2012-01-26 | Applied Materials, Inc. | Substrate holder to reduce substrate edge stress during chemical mechanical polishing |
| KR101196652B1 (en) * | 2011-05-31 | 2012-11-02 | 주식회사 케이씨텍 | Membrane assembly in carrier head |
| CN102922411B (en) * | 2011-08-10 | 2015-12-16 | 无锡华润上华科技有限公司 | Prevent the chemical and mechanical grinding method of wafer slide plate |
| US9017138B2 (en) | 2012-01-25 | 2015-04-28 | Applied Materials, Inc. | Retaining ring monitoring and control of pressure |
| US9050700B2 (en) * | 2012-01-27 | 2015-06-09 | Applied Materials, Inc. | Methods and apparatus for an improved polishing head retaining ring |
| KR101301001B1 (en) * | 2012-06-14 | 2013-08-28 | 에스엔유 프리시젼 주식회사 | Substrate processing system with function for preventing damage |
| KR200465446Y1 (en) | 2012-09-09 | 2013-02-19 | 전용준 | Carrier head in chemical mechanical polishing apparatus capable of checking conjunction status between carrier head housing and retaining ring |
| KR102191916B1 (en) * | 2013-06-26 | 2020-12-16 | 주식회사 케이씨텍 | Membrane in carrier head |
| KR101487414B1 (en) * | 2013-09-11 | 2015-01-29 | 주식회사 엘지실트론 | Apparatus for polishing a wafer |
| JP6232297B2 (en) | 2014-01-21 | 2017-11-15 | 株式会社荏原製作所 | Substrate holding device and polishing device |
| KR101559282B1 (en) | 2014-05-19 | 2015-10-19 | 주식회사 티에스시 | Membrane for Chemical-Mechanical Polishing of Wafer and Apparatus therewith |
| US9566687B2 (en) * | 2014-10-13 | 2017-02-14 | Sunedison Semiconductor Limited (Uen201334164H) | Center flex single side polishing head having recess and cap |
| CN105856056B (en) * | 2015-01-19 | 2018-03-02 | 大族激光科技产业集团股份有限公司 | A kind of shaped face automatic polishing device |
| CN105538045B (en) * | 2015-12-09 | 2018-06-26 | 浙江工业大学 | Pressure suspension polishing method and device of surging based on adaptive and fixed processing gap |
| US10654216B2 (en) * | 2016-03-30 | 2020-05-19 | Canon Kabushiki Kaisha | System and methods for nanoimprint lithography |
| TWI572444B (en) * | 2016-09-08 | 2017-03-01 | Vibration grinding machine structure | |
| TWI568537B (en) * | 2016-09-08 | 2017-02-01 | Vibration grinding machine structure | |
| JP6986930B2 (en) * | 2017-11-07 | 2021-12-22 | 株式会社荏原製作所 | Substrate polishing equipment and polishing method |
| KR102702996B1 (en) * | 2018-12-10 | 2024-09-04 | 삼성전자주식회사 | chemical mechanical polishing apparatus for controlling polishing uniformity |
| CN110142689B (en) | 2019-04-17 | 2021-09-14 | 杭州众硅电子科技有限公司 | Wafer loading support, wafer loading system and wafer loading method |
| CN111571444A (en) * | 2020-05-15 | 2020-08-25 | 中国科学院微电子研究所 | Polishing pad dressing device |
| US11890715B2 (en) | 2020-06-24 | 2024-02-06 | Applied Materials, Inc. | Polishing carrier head with piezoelectric pressure control |
| JP2023516875A (en) * | 2020-11-10 | 2023-04-21 | アプライド マテリアルズ インコーポレイテッド | Polishing head with localized wafer pressure |
| CN114505782B (en) * | 2020-11-17 | 2023-08-04 | 长鑫存储技术有限公司 | Fixing device and detection system |
| US12005545B2 (en) | 2020-11-17 | 2024-06-11 | Changxin Memory Technologies, Inc. | Fixing device and detection system |
| CN117083150A (en) * | 2021-03-17 | 2023-11-17 | 超微细技研有限公司 | Polishing head and polishing apparatus |
| CN114700871B (en) * | 2022-03-11 | 2023-11-24 | 上海致领半导体科技发展有限公司 | Third-generation semiconductor chemical mechanical polishing device |
| CN115091359B (en) * | 2022-05-26 | 2023-09-05 | 浙江晶盛机电股份有限公司 | polishing carrier |
| CN115431176B (en) * | 2022-11-08 | 2023-01-31 | 烟台环球机床装备股份有限公司 | Polishing pressure adjusting device for polishing machine tool |
| CN116372786B (en) * | 2023-06-05 | 2023-08-18 | 北京特思迪半导体设备有限公司 | Wafer polishing equipment |
| CN116442103B (en) * | 2023-06-13 | 2023-08-29 | 深圳市鲁光电子科技有限公司 | Third-generation semiconductor precision machining device |
| KR102705970B1 (en) * | 2023-09-14 | 2024-09-11 | 부재필 | wafer polishing head of CMP device |
| CN117245542B (en) * | 2023-11-17 | 2024-01-23 | 苏州博宏源机械制造有限公司 | Wafer double-sided polishing equipment and process |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3463227D1 (en) * | 1984-08-03 | 1987-05-27 | Loh Kg Optikmaschf | Supporting device for vulnerable objects, in particular optical lenses and other optical elements |
| US4918869A (en) * | 1987-10-28 | 1990-04-24 | Fujikoshi Machinery Corporation | Method for lapping a wafer material and an apparatus therefor |
| JP3311116B2 (en) * | 1993-10-28 | 2002-08-05 | 株式会社東芝 | Semiconductor manufacturing equipment |
| US5820448A (en) * | 1993-12-27 | 1998-10-13 | Applied Materials, Inc. | Carrier head with a layer of conformable material for a chemical mechanical polishing system |
| US5738574A (en) * | 1995-10-27 | 1998-04-14 | Applied Materials, Inc. | Continuous processing system for chemical mechanical polishing |
| JP3552845B2 (en) * | 1996-04-25 | 2004-08-11 | 株式会社ルネサステクノロジ | Method for manufacturing semiconductor device |
| US6183354B1 (en) * | 1996-11-08 | 2001-02-06 | Applied Materials, Inc. | Carrier head with a flexible membrane for a chemical mechanical polishing system |
| US5941758A (en) * | 1996-11-13 | 1999-08-24 | Intel Corporation | Method and apparatus for chemical-mechanical polishing |
| DE19651761A1 (en) * | 1996-12-12 | 1998-06-18 | Wacker Siltronic Halbleitermat | Method and device for polishing semiconductor wafers |
| US6056632A (en) * | 1997-02-13 | 2000-05-02 | Speedfam-Ipec Corp. | Semiconductor wafer polishing apparatus with a variable polishing force wafer carrier head |
| TW431942B (en) * | 1997-04-04 | 2001-05-01 | Tokyo Seimitsu Co Ltd | Polishing device |
| US5957751A (en) * | 1997-05-23 | 1999-09-28 | Applied Materials, Inc. | Carrier head with a substrate detection mechanism for a chemical mechanical polishing system |
| US6107203A (en) * | 1997-11-03 | 2000-08-22 | Motorola, Inc. | Chemical mechanical polishing system and method therefor |
| FR2778129B1 (en) * | 1998-05-04 | 2000-07-21 | St Microelectronics Sa | MEMBRANE SUPPORT DISC OF A POLISHING MACHINE AND METHOD OF OPERATING SUCH A MACHINE |
| US6251215B1 (en) * | 1998-06-03 | 2001-06-26 | Applied Materials, Inc. | Carrier head with a multilayer retaining ring for chemical mechanical polishing |
| US6422927B1 (en) * | 1998-12-30 | 2002-07-23 | Applied Materials, Inc. | Carrier head with controllable pressure and loading area for chemical mechanical polishing |
| US6093089A (en) * | 1999-01-25 | 2000-07-25 | United Microelectronics Corp. | Apparatus for controlling uniformity of polished material |
| DE19941903A1 (en) * | 1999-09-02 | 2001-03-15 | Wacker Siltronic Halbleitermat | Semiconductor wafers polishing method e.g. for manufacture of microelectronic devices, allows individual treatment of wafers by independent adjustment of pressure of polishing chambers |
-
2001
- 2001-05-11 CN CNB2004100881994A patent/CN100433269C/en not_active Expired - Fee Related
- 2001-05-11 CN CNB018121713A patent/CN1179821C/en not_active Expired - Fee Related
- 2001-05-11 AU AU2001259745A patent/AU2001259745A1/en not_active Abandoned
- 2001-05-11 JP JP2001583983A patent/JP2003533359A/en active Pending
- 2001-05-11 WO PCT/US2001/015306 patent/WO2001087541A2/en active Application Filing
- 2001-05-11 EP EP01933311A patent/EP1284840A2/en not_active Withdrawn
- 2001-05-11 KR KR1020027015207A patent/KR100811172B1/en not_active IP Right Cessation
Cited By (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104044057A (en) * | 2004-11-01 | 2014-09-17 | 株式会社荏原制作所 | Polishing device |
| CN105904335A (en) * | 2004-11-01 | 2016-08-31 | 株式会社荏原制作所 | Polishing apparatus |
| CN101927448A (en) * | 2009-06-24 | 2010-12-29 | 硅电子股份公司 | The method of local polishing semiconductor wafer |
| US9533394B2 (en) | 2009-06-24 | 2017-01-03 | Siltronic Ag | Method for the local polishing of a semiconductor wafer |
| CN102172887A (en) * | 2011-02-16 | 2011-09-07 | 清华大学 | Polishing head |
| CN102172887B (en) * | 2011-02-16 | 2013-01-30 | 清华大学 | Polishing head |
| CN104114323A (en) * | 2012-02-15 | 2014-10-22 | 信越半导体株式会社 | Polishing head and polishing device |
| US9266216B2 (en) | 2012-02-15 | 2016-02-23 | Shin-Etsu Handotai Co., Ltd. | Polishing head and polishing apparatus |
| CN103817591B (en) * | 2012-11-16 | 2016-08-03 | 有研半导体材料有限公司 | A kind of buffing machine debris handling devices |
| CN103817591A (en) * | 2012-11-16 | 2014-05-28 | 有研半导体材料股份有限公司 | Fragment treatment device for polishing machinery |
| CN104347467A (en) * | 2013-07-23 | 2015-02-11 | Ap系统股份有公司 | Substrate holding module and substrate processing device comprising same |
| CN104347468A (en) * | 2013-07-23 | 2015-02-11 | Ap系统股份有限公司 | Substrate holder module and apparatus for treatmenting substrate having the same |
| CN105081961B (en) * | 2014-05-14 | 2018-12-14 | 株式会社荏原制作所 | Grinding device |
| TWI656944B (en) * | 2014-05-14 | 2019-04-21 | 日商荏原製作所股份有限公司 | Polishing apparatus |
| CN105081961A (en) * | 2014-05-14 | 2015-11-25 | 株式会社荏原制作所 | Polishing device |
| US11059144B2 (en) | 2014-05-14 | 2021-07-13 | Ebara Corporation | Polishing apparatus |
| CN105058225A (en) * | 2015-07-07 | 2015-11-18 | 武汉新芯集成电路制造有限公司 | Grinding pad fixing device and chemical machinery grinder |
| CN106863110A (en) * | 2015-10-16 | 2017-06-20 | 应用材料公司 | Corrosion-resistant retaining ring |
| CN106863110B (en) * | 2015-10-16 | 2019-06-14 | 应用材料公司 | Corrosion-resistant retaining ring |
| CN105397574A (en) * | 2015-12-09 | 2016-03-16 | 浙江工业大学 | Hydrodynamic pressure suspension polishing device with machining clearance capable of being adjusted |
| CN105479325B (en) * | 2015-12-30 | 2018-04-17 | 天通吉成机器技术有限公司 | A kind of subregion pressue device and method suitable for large-scale single side polishing grinding equipment |
| CN105479325A (en) * | 2015-12-30 | 2016-04-13 | 天通吉成机器技术有限公司 | Partition pressing device and method suitable for large single-face grinding polishing device |
| CN108604543A (en) * | 2016-01-20 | 2018-09-28 | 应用材料公司 | The carrier of small-sized pad for chemically mechanical polishing |
| CN108604543B (en) * | 2016-01-20 | 2023-04-25 | 应用材料公司 | Carrier for miniature pad for chemical mechanical polishing |
| CN110352115A (en) * | 2017-03-06 | 2019-10-18 | 应用材料公司 | It is mobile for the spiral and concentric circles of the position CMP particular abrasive (LSP) design |
| CN108145586A (en) * | 2018-01-03 | 2018-06-12 | 京东方科技集团股份有限公司 | Polissoir and polishing method |
| CN109202697A (en) * | 2018-11-20 | 2019-01-15 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | The application method of rubbing head, polissoir and rubbing head |
| CN110802507A (en) * | 2019-11-11 | 2020-02-18 | 上海华力微电子有限公司 | Grinding head and chemical mechanical grinding equipment |
| CN111496658A (en) * | 2020-03-13 | 2020-08-07 | 东莞市飞尧科技有限公司 | Light machine is swept to strong adaptability |
| CN111496598A (en) * | 2020-04-24 | 2020-08-07 | 广东博智林机器人有限公司 | Plane grinding device and plane grinding robot |
| CN111823130A (en) * | 2020-07-17 | 2020-10-27 | 中国科学院微电子研究所 | Polishing head and polishing device |
| CN111922888A (en) * | 2020-08-11 | 2020-11-13 | 西安奕斯伟硅片技术有限公司 | Edge polishing apparatus and polishing method |
| CN112605848A (en) * | 2020-11-29 | 2021-04-06 | 厦门理工学院 | Electromagnetic polishing disk mechanism with adjustable gravity center and polishing method |
| CN112792725A (en) * | 2021-02-03 | 2021-05-14 | 华海清科股份有限公司 | Flexible membrane for chemical mechanical polishing, bearing head and polishing equipment |
| CN112792725B (en) * | 2021-02-03 | 2022-09-30 | 华海清科股份有限公司 | Flexible membrane for chemical mechanical polishing, bearing head and polishing equipment |
| CN113290426A (en) * | 2021-04-15 | 2021-08-24 | 金华博蓝特电子材料有限公司 | Method for improving polishing thickness uniformity of wafer |
| CN113878488A (en) * | 2021-10-18 | 2022-01-04 | 华海清科(北京)科技有限公司 | Chemical mechanical polishing head and polishing system |
| CN114310652A (en) * | 2021-12-30 | 2022-04-12 | 金陵科技学院 | Flexible grinding device for soft and brittle materials |
| CN115008342A (en) * | 2022-06-15 | 2022-09-06 | 安徽禾臣新材料有限公司 | Wafer polishing wax-free pad capable of preventing corner collapse and production process thereof |
| CN115008342B (en) * | 2022-06-15 | 2023-08-25 | 安徽禾臣新材料有限公司 | Corner collapse preventing wax-free pad for wafer polishing and production process thereof |
| CN115816298A (en) * | 2022-12-29 | 2023-03-21 | 西安奕斯伟材料科技有限公司 | Fixed disc, polishing equipment and polishing method |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1284840A2 (en) | 2003-02-26 |
| CN100433269C (en) | 2008-11-12 |
| CN1179821C (en) | 2004-12-15 |
| KR20030010621A (en) | 2003-02-05 |
| WO2001087541A2 (en) | 2001-11-22 |
| WO2001087541A3 (en) | 2002-03-28 |
| CN1638057A (en) | 2005-07-13 |
| JP2003533359A (en) | 2003-11-11 |
| KR100811172B1 (en) | 2008-03-10 |
| AU2001259745A1 (en) | 2001-11-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1179821C (en) | Pneumatic diaphragm head having independent retaining ring and multi-region pressure control, and method to use the same | |
| US6623343B2 (en) | System and method for CMP head having multi-pressure annular zone subcarrier material removal control | |
| US6506105B1 (en) | System and method for pneumatic diaphragm CMP head having separate retaining ring and multi-region wafer pressure control | |
| US20060105685A1 (en) | System and method for CMP having multi-pressure zone loading for improved edge and annular zone material removal control | |
| CN101053069A (en) | Polishing device | |
| CN1394355A (en) | Wafer manufacturing method, polishing apparatus, and wafer | |
| TWI639485B (en) | Substrate holding device, polishing device, and polishing method | |
| CN1684800A (en) | Polishing apparatus, polishing head, and polishing method | |
| KR101767272B1 (en) | Polishing apparatus | |
| TW201318767A (en) | Polishing head and polishing apparatus | |
| CN1791970A (en) | Substrate holding apparatus and polishing apparatus | |
| JP2000317819A (en) | Wafer polishing device | |
| WO1999051397A1 (en) | Polishing device | |
| CN1066083C (en) | Cylinder member holder, machining apparatus having said holder, and machining method using same | |
| KR20010078222A (en) | Structure of polishing head of polishing apparatus | |
| CN1698185A (en) | Substrate holding device and polishing device | |
| US6540590B1 (en) | Chemical mechanical polishing apparatus and method having a rotating retaining ring | |
| US6527625B1 (en) | Chemical mechanical polishing apparatus and method having a soft backed polishing head | |
| KR100920709B1 (en) | Chemical mechanical polishing cmp head, apparatus, and method and planarized semiconductor wafer produced thereby | |
| CN1928475A (en) | Vacuum drying device and drying method for substrate | |
| CN1748293A (en) | Substrate holding apparatus and polishing apparatus | |
| CN101607381B (en) | Chemical mechanical polishing (CMP) head, apparatus, and method and planarized semiconductor wafer produced thereby | |
| US6641461B2 (en) | Chemical mechanical polishing apparatus having edge, center and annular zone control of material removal | |
| KR20080073051A (en) | Polishing head of chemical and mechanical polishing apparatus | |
| CN1644317A (en) | Polishing apparatus and method of polishing work piece |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20041215 Termination date: 20100511 |