CN114700871B - Third-generation semiconductor chemical mechanical polishing device - Google Patents
Third-generation semiconductor chemical mechanical polishing device Download PDFInfo
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- CN114700871B CN114700871B CN202210241442.XA CN202210241442A CN114700871B CN 114700871 B CN114700871 B CN 114700871B CN 202210241442 A CN202210241442 A CN 202210241442A CN 114700871 B CN114700871 B CN 114700871B
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- 238000005498 polishing Methods 0.000 title claims abstract description 212
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 239000000126 substance Substances 0.000 title claims abstract description 18
- 230000007246 mechanism Effects 0.000 claims abstract description 72
- 239000007788 liquid Substances 0.000 claims description 111
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 56
- 238000011084 recovery Methods 0.000 claims description 21
- 238000002156 mixing Methods 0.000 claims description 12
- 238000004064 recycling Methods 0.000 claims description 12
- 238000004891 communication Methods 0.000 claims description 8
- 230000006835 compression Effects 0.000 abstract description 3
- 238000007906 compression Methods 0.000 abstract description 3
- 238000012545 processing Methods 0.000 abstract description 3
- 239000002351 wastewater Substances 0.000 description 29
- 239000000243 solution Substances 0.000 description 28
- 230000008878 coupling Effects 0.000 description 11
- 238000010168 coupling process Methods 0.000 description 11
- 238000005859 coupling reaction Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 7
- 239000007800 oxidant agent Substances 0.000 description 7
- 230000009471 action Effects 0.000 description 6
- 230000005389 magnetism Effects 0.000 description 6
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 4
- 235000017491 Bambusa tulda Nutrition 0.000 description 4
- 241001330002 Bambuseae Species 0.000 description 4
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 4
- 239000011425 bamboo Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000010808 liquid waste Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000005708 Sodium hypochlorite Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
- B24B55/03—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant designed as a complete equipment for feeding or clarifying coolant
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention belongs to the technical field of third-generation semiconductor processing, and discloses a third-generation semiconductor chemical mechanical polishing device which comprises a workbench, a hydraulic rod, a polishing machine large disc and a polishing pad, wherein a connecting mechanism is fixedly connected to the telescopic end of the hydraulic rod, a connecting ring is movably sleeved on the outer surface of the hydraulic rod, a fixed cylinder is fixedly installed inside the connecting ring, a spring is movably sleeved inside the fixed cylinder, a magnetic suction ring is fixedly installed inside the fixed cylinder, and a magnetic suction block is fixedly connected to the bottom end of the connecting mechanism. According to the invention, the magnetic attraction block is driven to gradually attract the magnetic attraction ring and finally attract the magnetic attraction ring together through the movement of the connecting mechanism, the vertical position of the connecting mechanism is kept motionless along with the stop movement of the hydraulic rod, and the degree of compression of the spring is stabilized through the cooperation of the magnetic attraction ring and the magnetic attraction block, so that the compression stability of the wafer is realized, and the polishing stability of the wafer is maintained.
Description
Technical Field
The invention belongs to the technical field of third-generation semiconductor processing, and particularly relates to a third-generation semiconductor chemical mechanical polishing device.
Background
Due to development and application of electric automobiles and 5G, demands for third-generation semiconductor materials such as silicon carbide, gallium nitride and the like are increasing increasingly, but the manufacturing difficulty of the third-generation semiconductor substrate is extremely high due to the characteristics of high hardness, high physical property stability and the like of the third-generation semiconductor materials, wherein the manufacturing difficulty is particularly reflected in a chemical mechanical polishing process of a wafer; in order to reach the epitaxial standard, the wafer needs to be subjected to ultra-precise chemical mechanical polishing; there is therefore a need for a third generation semiconductor chemical mechanical polishing apparatus.
At present, the existing third-generation semiconductor chemical mechanical polishing device mainly fixes a wafer on a carrier disc at the bottom of a pressure disc, rotates along with the rotation of the pressure disc and downwards presses the pressure disc, and is matched with polishing liquid to polish and polish, and a hydraulic rod bearing a downwards pressing power source can not stably maintain the relative pressure between the wafer and a polishing pad when the pressure disc is pressed due to unstable factors along with the downwards movement of the pressure disc, so that the wafer can not obtain a stable polishing and polishing environment at the bottom of the pressure disc rotating at a high speed, and the yield of the wafer during processing is reduced.
Meanwhile, the top of the big disc of the polishing machine is free from shielding measures, so that the wafer rotating at high speed can throw out polishing liquid wastewater during polishing, the workbench is difficult to clean, and meanwhile, the polishing liquid wastewater needs to be recycled to a groove wastewater area in the middle of the big disc of the polishing machine, but the wafer rotating at high speed and the polishing pad shield a backflow route, so that recycling efficiency is reduced.
In addition, since conventional chemical mechanical polishing hardly generates removal amount for third generation semiconductor materials such as silicon carbide, gallium nitride and the like, an oxidizing agent such as sodium hypochlorite, potassium permanganate or hydrogen peroxide needs to be added into the polishing liquid to enhance the oxidizing property of the polishing liquid, so that the chemical mechanical polishing rate of a wafer is improved, but the conventional oxidizing agent needs to be mixed after weighing, so that the working efficiency is affected, the concentration of the oxidizing agent can be gradually reduced in the use process, so that the oxidizing property of the polishing liquid is reduced, the polishing rate is reduced, and part of the oxidizing agent has the environmental protection problem and has high use cost.
Disclosure of Invention
The present invention is directed to a third generation semiconductor chemical mechanical polishing apparatus, which solves the above-mentioned problems of the related art.
In order to achieve the above object, the present invention provides the following technical solutions: the utility model provides a third generation semiconductor chemical mechanical polishing device, includes workstation, hydraulic stem, burnishing machine big tray and polishing pad, the flexible end fixedly connected with coupling mechanism of hydraulic stem, coupling ring has been cup jointed in the surface activity of coupling mechanism, the inside fixed mounting of coupling ring has a fixed section of thick bamboo, the inside activity of fixed section of thick bamboo has cup jointed the spring, the inside fixed mounting of fixed section of thick bamboo has the magnetism to inhale the ring, the bottom fixedly connected with magnetism of coupling mechanism inhales the piece, the bottom fixedly mounted of coupling ring has the removal case, the inside of removal case is provided with power unit and fixedly connected with pressure disc through the spliced pole, the wafer has been adsorbed to the bottom of pressure disc, recovery tank has been seted up at the top of burnishing machine big tray, the back of workstation is provided with liquid feed mechanism;
when the polishing device works, polishing liquid is sprayed into the large polishing disc through the liquid supply mechanism, the surface of the polishing pad is fully covered with the polishing liquid, the hydraulic rod is started, the pressure disc and the wafer are driven to move downwards, when the wafer moves downwards to a position contacting with the polishing pad, the connecting mechanism continues to move downwards under the action of the hydraulic rod and compresses the spring, the magnetic attraction block is driven to move downwards and gradually approach the magnetic attraction ring along with the downward movement of the connecting mechanism, at the moment, the hydraulic rod is stopped, the magnetic attraction block and the magnetic attraction ring are enabled to be in magnetic attraction contact with each other, the spring is compressed to the greatest extent, then the pressure is transmitted to the pressure disc and the wafer, the motor is started, the pressure disc and the wafer are driven to rotate through the power mechanism, and the wafer and the polishing pad which rotate at a high speed are rubbed and polished.
Through being provided with the spring and being connected with coupling mechanism and a fixed section of thick bamboo respectively, drive coupling mechanism at the hydraulic stem and move down the in-process of moving for the wafer is contacting and friction with the polishing pad, and the coupling mechanism of moving down compresses the spring and transmits pressure to pressure disk and wafer on the one hand, simultaneously, through coupling mechanism's removal, drives the magnetism and inhale the ring and attract each other and finally adsorb together with the magnetism gradually, along with the stop of hydraulic stem removes, coupling mechanism's vertical position keeps motionless, and the cooperation through magnetism inhale ring and magnetism inhale the ring is stabilized the degree that the spring was compressed, thereby realizes that the pressurized of wafer is stable, keeps the polishing stability of wafer.
Preferably, the outer edge of the top of the big disc of the polishing machine is provided with a bulge, the inner side surface of the bulge is provided with a liquid collecting tank, the bottom of the liquid collecting tank is provided with a communicating tank communicated with a recycling tank, and the top of the big disc of the polishing machine is fixedly connected with a polishing pad;
and part of the polishing liquid wastewater subjected to the polishing and grinding treatment of the wafer directly flows into the recovery tank and is recovered, the other part of the polishing liquid wastewater is driven by the wafer rotating at a high speed and is distributed on the inner wall of the bulge at the top of the large disc of the polishing machine, and along with the increase of the water quantity of the polishing liquid wastewater, the wastewater starts to flow into the communication tank along the liquid collecting tank and finally flows back to the recovery tank.
Through seting up the collecting tank and making the polishing solution waste water that is driven by the high-speed rotation of wafer get into the inner wall of collecting tank along the inclined plane of the protruding inner wall in polishing machine big tray top, then converge to the inner wall of recovery tank through the intercommunication groove, when the inside of polishing solution injection polishing machine big tray, because the opening part at collecting tank top is higher than the upper surface of polishing pad, consequently need not to worry that the polishing solution flows into the collecting tank and causes the waste, simultaneously, the inclined plane design of the protruding inner wall in polishing machine big tray top can avoid the polishing solution entering the inside of collecting tank of polishing treatment not, good filtering capability has been realized, thereby realized the high-efficient recovery function of polishing solution waste water.
Preferably, the liquid supply mechanism comprises a fixed plate, a polishing liquid barrel and an ozone generator are fixedly arranged at the top of the fixed plate, the ozone generator is communicated with the polishing liquid barrel through a first communicating pipe, a second communicating pipe is fixedly communicated with the polishing liquid barrel through an ozone and polishing liquid mixing device, the other end of the ozone and polishing liquid mixing device extends to the top of a polishing machine big disc, and polishing liquid is placed in the polishing liquid barrel;
the ozone generator is started to produce ozone, then the ozone is introduced into the polishing solution in the polishing solution barrel through the first communicating pipe and dissolved, and then the second communicating pipe is started to suck out the polishing solution and inject the polishing solution into the polishing machine big disc through the ozone and polishing solution mixing device.
Ozone is produced through the ozone generator and is dissolved in the polishing solution barrel through the first communicating pipe, the oxidability of most other oxidants is strong, the mechanical polishing efficiency of the device can be further improved, meanwhile, the ozone is automatically generated by the system and is added according to program control, the working efficiency is improved, the ozone cost is extremely low, the ozone is easy to obtain, the decomposition speed of ozone components in the polishing solution is extremely high, the influence on the environment is avoided, and the device is more environment-friendly.
Preferably, the power mechanism comprises a motor and connecting columns, wherein the output shaft of the motor is fixedly connected with driving gears, the number of the connecting columns is four and the connecting columns are distributed on the outer surface of the driving gears at equal angles, the upper part of the outer surface of each connecting column is fixedly sleeved with a driven gear, the driving gears are meshed with the driven gears, the outer surface of each connecting column is fixedly sleeved with two limiting rings distributed on the upper side and the lower side of the driven gears, and the two limiting rings are in limiting contact with the upper side and the lower side of the inner wall of the movable box respectively;
the motor is through passive gear and driving gear with power transmission for spliced pole and pressure dish through the moment of torsion reinforcing to maintain the comparatively stable rotational speed of pressure dish and wafer, simultaneously, two spacing rings are used for maintaining the support of spliced pole in the removal incasement portion.
Preferably, the bottom end of the outer surface of the connecting mechanism is adaptively sleeved on the inner wall of the fixed cylinder through an annular bulge, the outer surface of the connecting mechanism is movably sleeved with a spring, and the connecting mechanism is elastically connected with the spring through the annular bulge;
the spring on the one hand buffers the unstable pressure from the hydraulic rod, and simultaneously, along with the downward movement of the connecting mechanism, the spring is gradually compressed and transmits the pressure downwards, so that the pressure transmission to the wafer stage is formed, and the wafer maintains a proper pressure after contacting with the polishing pad.
Preferably, the cross section of the liquid collecting groove is in a shape of a left-right symmetrical C, and the bottom of the liquid collecting groove is communicated with the communicating groove;
the liquid collecting tank is used for being communicated between the top of the big disc of the polishing machine and the communicating tank, along with the high-speed rotation of the wafer, the polishing liquid wastewater driven to fly moves along the raised inner wall of the top of the big disc of the polishing machine, along with the increase of the wastewater quantity, the polishing liquid wastewater gradually climbs to the inside of the liquid collecting tank along the inclined plane of the raised inner wall of the top of the big disc of the polishing machine, then gradually flows to the inside of the communicating tank through the liquid collecting tank, continuously accumulates the polishing liquid wastewater, finally flows back to the inside of the recycling tank and completes recycling.
Preferably, the ozone generator is selectively communicated with the polishing solution barrel through a first communicating pipe or directly communicated with a second communicating pipe;
ozone generator produces ozone according to the instruction of system control ware after starting, can let in the inside polishing liquid of polishing liquid bucket and dissolve wherein through communicating pipe No. one, simultaneously, also can directly communicate communicating pipe No. one with No. two communicating pipes, let the polishing liquid from the polishing liquid bucket in No. two communicating pipes the inside mix with ozone and spray into the inside of polishing machine big tray through ozone and polishing liquid mixing arrangement.
Preferably, the number of the communication grooves is eight, and the eight communication grooves are uniformly distributed on the inner wall of the recovery groove and are respectively communicated with the recovery groove and the liquid collecting groove;
the quantity of intercommunication groove is eight, and it communicates with the collecting tank respectively for collect in the inside polishing solution of collecting tank can be under the slope design of intercommunication groove smooth converging to the recovery tank, thereby improve the recovery efficiency of polishing solution waste water. .
Preferably, the connecting mechanism consists of a disc and four guide posts, the disc is fixedly connected with the telescopic end of the hydraulic rod, and the guide posts extend downwards to the inside of the connecting ring and are clamped in the inside of the connecting ring through annular protrusions;
the disc is fixedly connected with the output shaft of the hydraulic rod, then the disc is matched with the connecting ring in a sleeved mode through four guide posts at the bottom, the connecting ring is supported on one side, and meanwhile, the pressure disc and the wafer are pressed through the springs when the connecting mechanism moves downwards.
The beneficial effects of the invention are as follows:
1. according to the polishing device, the springs are respectively connected with the connecting mechanism and the fixed cylinder, in the process that the hydraulic rod drives the connecting mechanism to move downwards, the wafer is contacted with the polishing pad and rubbed, the connecting mechanism which moves downwards compresses the springs and transmits pressure to the pressure disc and the wafer on one hand, meanwhile, the magnetic suction blocks are driven to gradually attract the magnetic suction rings to be finally adsorbed together through the movement of the connecting mechanism, along with the stop movement of the hydraulic rod, the vertical position of the connecting mechanism is kept motionless, the degree of compression of the springs is stabilized through the cooperation of the magnetic suction rings and the magnetic suction blocks, so that the pressed stability of the wafer is realized, and the polishing stability of the wafer is maintained.
2. According to the polishing liquid waste recycling device, the liquid collecting groove is formed, so that polishing liquid waste water driven by high-speed rotation of a wafer enters the inner wall of the liquid collecting groove along the inclined surface of the inner wall of the bulge at the top of the large disc of the polishing machine, and then is converged to the inner wall of the recycling groove through the communicating groove.
3. According to the invention, the ozone generator is arranged to produce ozone and the ozone is dissolved in the polishing solution barrel through the first communicating pipe, so that the oxidizing property of the ozone is stronger than that of most other oxidants, the mechanical polishing efficiency of the device can be further improved, meanwhile, the ozone is automatically generated by the system and is added according to program control, the working efficiency is improved, the ozone cost is extremely low, the ozone is easy to obtain, the decomposition speed of ozone components in the polishing solution is extremely high, the environmental impact is avoided, and the polishing solution is more environment-friendly.
Drawings
FIG. 1 is a schematic view of the front perspective view of the structure of the present invention;
FIG. 2 is a schematic view of the rear perspective view of the structure of the present invention;
FIG. 3 is a schematic view in partial front cross-section of the structure of the present invention;
FIG. 4 is an enlarged schematic view of the structure of FIG. 3A according to the present invention;
FIG. 5 is a schematic side view of the structure of the present invention;
FIG. 6 is a schematic diagram of a power mechanism according to the present invention;
FIG. 7 is an exploded view of the hydraulic stem, the connecting mechanism, the connecting ring, the fixing cylinder, the magnetic attraction ring, the spring and the magnetic attraction block of the present invention;
fig. 8 is a schematic structural view of the liquid supply mechanism of the present invention.
In the figure: 1. a work table; 2. a hydraulic rod; 3. a connecting mechanism; 4. a connecting ring; 5. a motor; 6. a liquid supply mechanism; 61. a fixing plate; 62. a polishing liquid barrel; 63. an ozone generator; 64. a first communicating pipe; 65. a second communicating pipe; 66. ozone and polishing solution mixing device; 7. a moving case; 8. a connecting column; 9. a pressure plate; 10. a wafer; 11. a polishing machine large disc; 12. a polishing pad; 13. a recovery tank; 14. a liquid collecting tank; 15. a communication groove; 16. a fixed cylinder; 17. a magnetic ring; 18. a spring; 19. a magnetic suction block; 20. a drive gear; 21. a driven gear.
Description of the embodiments
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 1 to 8, in the embodiment of the invention, a third generation semiconductor chemical mechanical polishing device comprises a workbench 1, a hydraulic rod 2, a polishing machine big disc 11 and a polishing pad 12, wherein a connecting mechanism 3 is fixedly connected to the telescopic end of the hydraulic rod 2, a connecting ring 4 is movably sleeved on the outer surface of the connecting mechanism 3, a fixed cylinder 16 is fixedly arranged in the connecting ring 4, a spring 18 is movably sleeved in the fixed cylinder 16, a magnetic suction ring 17 is fixedly arranged in the fixed cylinder 16, a magnetic suction block 19 is fixedly connected to the bottom end of the connecting mechanism 3, a movable box 7 is fixedly arranged at the bottom of the connecting ring 4, a power mechanism is arranged in the movable box 7 and fixedly connected with a pressure disc 9 through a connecting column 8, a wafer 10 is adsorbed at the bottom of the pressure disc 9, a recovery groove 13 is formed in the top of the polishing machine big disc 11, and a liquid supply mechanism 6 is arranged on the back of the workbench 1;
when the polishing device works, polishing liquid is sprayed into the large polishing disc 11 of the polishing machine through the liquid supply mechanism 6, the surface of the polishing pad 12 is fully covered with the polishing liquid, the hydraulic rod 2 is started to drive the pressure disc 9 and the wafer 10 to move downwards, when the wafer 10 moves downwards to a position contacting with the polishing pad 12, the connecting mechanism 3 continues to move downwards under the action of the hydraulic rod 2 and compresses the spring 18, the magnetic block 19 is driven to move downwards and gradually approach the magnetic ring 17 along with the downward movement of the connecting mechanism 3, at the moment, the hydraulic rod 2 is stopped, the magnetic block 19 and the magnetic ring 17 keep mutual magnetic attraction contact, the spring 18 is compressed to the extreme, then pressure is transmitted to the pressure disc 9 and the wafer 10, the motor 5 is started to drive the pressure disc 9 and the wafer 10 to rotate through the power mechanism, and the wafer 10 and the polishing pad 12 rotate at a high speed to generate friction and perform polishing operation.
The connecting mechanism 3 is driven to move downwards by the hydraulic rod 2 through being provided with the springs 18 to be connected with the connecting mechanism 3 and the fixed cylinder 16, so that the wafer 10 is contacted with the polishing pad 12 and rubbed, the connecting mechanism 3 which moves downwards compresses the springs 18 and transmits pressure to the pressure disc 9 and the wafer 10 on the one hand, meanwhile, the magnetic attraction blocks 19 are driven to gradually attract the magnetic attraction rings 17 and finally adsorb the magnetic attraction rings together through the movement of the connecting mechanism 3, the vertical position of the connecting mechanism 3 is kept motionless along with the stop movement of the hydraulic rod 2, the compressed degree of the springs 18 is stabilized through the cooperation of the magnetic attraction rings 17 and the magnetic attraction blocks 19, and therefore the pressed stability of the wafer 10 is realized, and the polishing stability of the wafer 10 is kept.
Wherein, the outer edge of the top of the big disc 11 of the polishing machine is provided with a bulge, the inner side surface of the bulge is provided with a liquid collecting tank 14, the bottom of the liquid collecting tank 14 is provided with a communicating tank 15 communicated with the recycling tank 13, and the top of the big disc 11 of the polishing machine is fixedly connected with a polishing pad 12;
part of the polishing liquid wastewater after polishing and grinding the wafer 10 directly flows into the recovery tank 13 and is recovered, and the other part of the polishing liquid wastewater is driven by the wafer 10 rotating at a high speed and is distributed on the inner wall of the bulge at the top of the large disc 11 of the polishing machine, and along with the increase of the amount of the polishing liquid wastewater, the wastewater starts to flow into the communication tank 15 along the liquid collecting tank 14 and finally flows back to the recovery tank 13.
Through set up the collecting tank 14 so that the polishing solution waste water that is driven by the high-speed rotation of wafer 10 gets into the inner wall of collecting tank 14 along the inclined plane of the protruding inner wall in polishing machine big tray 11 top, then converge to the inner wall of retrieving groove 13 through intercommunication groove 15, when the polishing solution pours into the inside of polishing machine big tray 11, because the opening part at collecting tank 14 top is higher than the upper surface of polishing pad 12, consequently need not to worry that the polishing solution flows into collecting tank 14 and causes the waste, simultaneously, the inclined plane design of the protruding inner wall in polishing machine big tray 11 top can avoid the polishing solution that has not undergone polishing treatment to get into the inside of collecting tank 14, good filtering capability has been realized, thereby realized the high-efficient recovery function of polishing solution waste water.
The liquid supply mechanism 6 comprises a fixed plate 61, a polishing liquid barrel 62 and an ozone generator 63 are fixedly arranged at the top of the fixed plate 61, the ozone generator 63 is communicated with the polishing liquid barrel 62 through a first communicating pipe 64, the polishing liquid barrel 62 is fixedly communicated with a second communicating pipe 65 through an ozone and polishing liquid mixing device 66, the other end of the ozone and polishing liquid mixing device 66 extends to the top of a polishing machine big disc 11, and polishing liquid is placed in the polishing liquid barrel 62;
the ozone generator 63 is started and ozone is produced and then introduced into the polishing liquid located inside the polishing liquid tank 62 through the first communicating pipe 64 and dissolved, and then the second communicating pipe 65 is started and sucks out the polishing liquid and injects the polishing liquid into the inside of the polishing machine large disc 11 through the ozone and polishing liquid mixing device 66.
Ozone is produced through the ozone generator 63 and is dissolved in the polishing solution barrel 62 through the first communicating pipe 64, the oxidability of most of other oxidants is strong, the mechanical polishing efficiency of the device can be further improved, meanwhile, the ozone is automatically produced by the system and is added according to program control, the working efficiency is improved, the ozone cost is extremely low, the ozone is easy to obtain, the decomposition speed of ozone components in the polishing solution is extremely high, the influence on the environment is avoided, and the environment is more protected.
The power mechanism comprises a motor 5 and connecting columns 8, wherein the output shaft of the motor 5 is fixedly connected with driving gears 20, the number of the connecting columns 8 is four and the connecting columns are distributed on the outer surface of the driving gears 20 at equal angles, the upper part of the outer surface of each connecting column 8 is fixedly sleeved with a driven gear 21, the driving gears 20 are meshed with the driven gears 21, the outer surface of each connecting column 8 is fixedly sleeved with two limiting rings distributed on the upper side and the lower side of the driven gear 21, and the two limiting rings are in limiting contact with the upper side and the lower side of the inner wall of the movable box 7 respectively;
the motor 5 transmits power to the connecting column 8 and the pressure disc 9 through the driven gear 21 and the driving gear 20 through torque reinforcement, so that stable rotation speeds of the pressure disc 9 and the wafer 10 are maintained, and meanwhile, the two limiting rings are used for maintaining the support of the connecting column 8 in the movable box 7.
Wherein, the bottom end of the outer surface of the connecting mechanism 3 is adaptively sleeved on the inner wall of the fixed cylinder 16 through an annular bulge, the outer surface of the connecting mechanism 3 is movably sleeved with a spring 18, and the connecting mechanism 3 is elastically connected with the spring 18 through the annular bulge;
the spring 18 on the one hand buffers the unstable pressure from the hydraulic rod 2, and at the same time, as the connecting mechanism 3 moves downwards, the spring 18 is gradually compressed and transmits the pressure downwards, so as to form pressure transmission for the stage of the wafer 10, and the wafer 10 maintains a proper pressure after contacting with the polishing pad 12.
Wherein, the cross section of the liquid collecting tank 14 is in a shape of a C which is symmetrical left and right, and the bottom of the liquid collecting tank 14 is communicated with the communicating tank 15;
the liquid collecting tank 14 is used for being communicated between the top of the big disc 11 of the polishing machine and the communicating tank 15, along with the high-speed rotation of the wafer 10, the polishing liquid wastewater driven to fly moves along the raised inner wall at the top of the big disc 11 of the polishing machine, along with the increase of the wastewater quantity, the wastewater gradually climbs to the inside of the liquid collecting tank 14 along the inclined plane of the raised inner wall at the top of the big disc 11 of the polishing machine, then gradually flows to the inside of the communicating tank 15 through the liquid collecting tank 14, continuously accumulates the polishing liquid wastewater, finally flows back to the inside of the recycling tank 13 and completes recycling.
Wherein, the ozone generator 63 is optionally communicated with the polishing solution barrel 62 through a first communicating pipe 64 or directly communicated with a second communicating pipe 65;
ozone generator 63 produces ozone according to the instruction of the system controller after starting, and can be introduced into and dissolved in the polishing liquid in polishing liquid tank 62 through communicating pipe No. one 64, and simultaneously, communicating pipe No. one 64 can be directly communicated with communicating pipe No. two 65, so that the polishing liquid from polishing liquid tank 62 is mixed with ozone in communicating pipe No. two 65 and is injected into polishing machine large disc 11 through ozone and polishing liquid mixing device 66.
Wherein the number of the communicating grooves 15 is eight, and the eight communicating grooves 15 are uniformly distributed on the inner wall of the recovery groove 13 and are respectively communicated with the recovery groove 13 and the liquid collecting groove 14;
the number of the communicating grooves 15 is eight, and the communicating grooves are respectively communicated with the liquid collecting groove 14, so that polishing liquid collected in the liquid collecting groove 14 can smoothly flow into the recycling groove 13 under the inclined design of the communicating grooves 15, and the recycling efficiency of polishing liquid wastewater is improved. .
The connecting mechanism 3 consists of a disc and four guide posts, the disc is fixedly connected with the telescopic end of the hydraulic rod 2, and the guide posts extend downwards to the inside of the connecting ring 4 and are clamped in the inside of the connecting ring 4 through annular protrusions;
the disc is fixedly connected with the output shaft of the hydraulic rod 2, then is sleeved and matched with the connecting ring 4 through four guide posts at the bottom, supports the connecting ring 4 on the one hand, and simultaneously presses the pressure disc 9 and the wafer 10 through the spring 18 when the connecting mechanism 3 moves downwards.
Working principle and using flow:
when the polishing device works, polishing liquid is sprayed into the polishing machine large disc 11 through the liquid supply mechanism 6, an ozone generator 63 is started and ozone is produced, then the ozone is introduced into the polishing liquid positioned in the polishing liquid barrel 62 through a first communicating pipe 64 and dissolved, then a second communicating pipe 65 is started to suck the polishing liquid out and inject the polishing liquid into the polishing machine large disc 11 through an ozone and polishing liquid mixing device 66, the surface of a polishing pad 12 is fully covered with the polishing liquid, a hydraulic rod 2 is started and drives a pressure disc 9 and a wafer 10 to move downwards, when the wafer 10 moves downwards to a position contacting with the polishing pad 12, a connecting mechanism 3 continues to move downwards under the action of the hydraulic rod 2 and compresses a spring 18, and as the connecting mechanism 3 moves downwards, a magnetic suction block 19 is driven to move downwards and gradually approach a magnetic suction ring 17, at the moment, the hydraulic rod 2 is stopped, the magnetic suction block 19 and the magnetic suction ring 17 keep mutually in magnetic suction contact, the spring 18 is compressed to be extremely, then the pressure is transferred to the pressure disc 9 and the wafer 10, a motor 5 is started and drives the pressure disc 9 and the wafer 10 to rotate downwards through a power mechanism, and the polishing pad 10 rotates at a high speed, and the polishing operation is carried out on the wafer 12;
part of the polishing liquid wastewater after polishing and grinding the wafer 10 directly flows into the recovery tank 13 and is recovered, and the other part of the polishing liquid wastewater is driven by the wafer 10 rotating at a high speed and is distributed on the inner wall of the bulge at the top of the large disc 11 of the polishing machine, and along with the increase of the amount of the polishing liquid wastewater, the wastewater starts to flow into the communication tank 15 along the liquid collecting tank 14 and finally flows back to the recovery tank 13.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. The utility model provides a third generation semiconductor chemical mechanical polishing device, includes workstation (1), hydraulic stem (2), burnishing machine big dish (11) and polishing pad (12), its characterized in that: the automatic polishing machine is characterized in that a connecting mechanism (3) is fixedly connected to the telescopic end of the hydraulic rod (2), a connecting ring (4) is movably sleeved on the outer surface of the connecting mechanism (3), a fixed cylinder (16) is fixedly installed inside the connecting ring (4), a spring (18) is movably sleeved inside the fixed cylinder (16), a magnetic suction ring (17) is fixedly installed inside the fixed cylinder (16), a magnetic suction block (19) is fixedly connected to the bottom end of the connecting mechanism (3), a movable box (7) is fixedly installed at the bottom of the connecting ring (4), a power mechanism is arranged inside the movable box (7) and fixedly connected with a pressure disc (9) through a connecting column (8), a wafer (10) is adsorbed on the bottom of the pressure disc (9), a recovery groove (13) is formed in the top of the polishing machine large disc (11), and a liquid supply mechanism (6) is arranged on the back of the workbench (1).
The bottom end of the outer surface of the connecting mechanism (3) is adaptively sleeved on the inner wall of the fixed cylinder (16) through an annular bulge, a spring (18) is movably sleeved on the outer surface of the connecting mechanism (3), and the connecting mechanism (3) is elastically connected with the spring (18) through the annular bulge;
the magnetic attraction ring (17) is arranged at the bottom of the fixed cylinder (16);
the polishing machine is characterized in that a bulge is arranged at the outer edge of the top of the polishing machine big disc (11), a liquid collecting groove (14) is formed in the inner side surface of the bulge, a communicating groove (15) communicated with a recycling groove (13) is formed in the bottom of the liquid collecting groove (14), and a polishing pad (12) is fixedly connected to the top of the polishing machine big disc (11);
the opening at the top of the liquid collecting groove (14) is higher than the upper surface of the polishing pad (12), and the inner wall of the bulge at the top of the polishing machine big disc (11) is provided with an inclined surface inclined towards the polishing pad (12);
the cross section of the liquid collecting groove (14) is in a shape of a left-right symmetrical C, and the bottom of the liquid collecting groove (14) is communicated with the communicating groove (15);
the connecting mechanism (3) consists of a disc and four guide posts, the disc is fixedly connected with the telescopic end of the hydraulic rod (2), and the guide posts extend downwards to the inside of the connecting ring (4) and are clamped in the inside of the connecting ring (4) through annular protrusions.
2. A third generation semiconductor chemical mechanical polishing device according to claim 1, wherein: the polishing device is characterized in that the liquid supply mechanism (6) comprises a fixing plate (61), a polishing liquid barrel (62) and an ozone generator (63) are fixedly arranged at the top of the fixing plate (61), the ozone generator (63) is communicated with the polishing liquid barrel (62) through a first communicating pipe (64), a second communicating pipe (65) is fixedly communicated with the polishing liquid barrel (62) through an ozone and polishing liquid mixing device (66), the other end of the ozone and polishing liquid mixing device (66) extends to the top of a polishing machine large disc (11), and polishing liquid is placed in the polishing liquid barrel (62).
3. A third generation semiconductor chemical mechanical polishing device according to claim 1, wherein: the power mechanism comprises a motor (5) and a connecting column (8), wherein an output shaft of the motor (5) is fixedly connected with a driving gear (20), the number of the connecting columns (8) is four and is distributed on the outer surface of the driving gear (20) at equal angles, each driving gear (20) is fixedly sleeved on the upper part of the outer surface of the connecting column (8) and meshed with the driven gear (21), two limiting rings distributed on the upper side and the lower side of the driven gear (21) are fixedly sleeved on the outer surface of the connecting column (8), and the two limiting rings are respectively in limiting contact with the upper side and the lower side of the inner wall of the movable box (7).
4. A third generation semiconductor chemical mechanical polishing apparatus as recited in claim 2, wherein: the ozone generator (63) can be alternatively communicated with the polishing solution barrel (62) through a first communicating pipe (64) or directly communicated with a second communicating pipe (65).
5. A third generation semiconductor chemical mechanical polishing device according to claim 1, wherein: the number of the communication grooves (15) is eight, and the eight communication grooves (15) are uniformly distributed on the inner wall of the recovery groove (13) and are respectively communicated with the recovery groove (13) and the liquid collecting groove (14).
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| CN115157107B (en) * | 2022-07-14 | 2023-07-14 | 江苏晶杰光电科技有限公司 | Chemical mechanical polishing machine for semiconductor polishing |
| CN115446726A (en) * | 2022-08-03 | 2022-12-09 | 天津中环领先材料技术有限公司 | Polishing method for improving flatness of silicon wafer |
| CN116551559B (en) * | 2023-02-28 | 2023-12-12 | 名正(浙江)电子装备有限公司 | Wafer grinding and polishing machine with pressure sensing system |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5738574A (en) * | 1995-10-27 | 1998-04-14 | Applied Materials, Inc. | Continuous processing system for chemical mechanical polishing |
| CN1638057A (en) * | 2000-05-12 | 2005-07-13 | 多平面技术公司 | Pneumatic diaphragm head having independent retaining ring and multi-region pressure control, and method to use the same |
| CN102084466A (en) * | 2008-07-01 | 2011-06-01 | 应用材料股份有限公司 | Modular base-plate semiconductor polisher architecture |
| CN104023889A (en) * | 2011-12-06 | 2014-09-03 | 国立大学法人大阪大学 | Method for manufacturing solid oxide and device therefor |
| CN109318114A (en) * | 2017-07-31 | 2019-02-12 | 上海新昇半导体科技有限公司 | A kind of final polishing machine of semiconductor crystal wafer and final polishing and cleaning method |
| CN109648451A (en) * | 2018-12-29 | 2019-04-19 | 徐州鑫晶半导体科技有限公司 | The final polishing method of Silicon Wafer and final burnishing device |
| CN111941267A (en) * | 2020-08-13 | 2020-11-17 | 张俊玲 | Semiconductor silicon wafer polishing machine |
| CN212977873U (en) * | 2020-05-12 | 2021-04-16 | 张志恒 | Semiconductor wafer polishing device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030219982A1 (en) * | 2002-05-23 | 2003-11-27 | Hitachi Chemical Co., Ltd | CMP (chemical mechanical polishing) polishing liquid for metal and polishing method |
| US20100279435A1 (en) * | 2009-04-30 | 2010-11-04 | Applied Materials, Inc. | Temperature control of chemical mechanical polishing |
-
2022
- 2022-03-11 CN CN202210241442.XA patent/CN114700871B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5738574A (en) * | 1995-10-27 | 1998-04-14 | Applied Materials, Inc. | Continuous processing system for chemical mechanical polishing |
| CN1638057A (en) * | 2000-05-12 | 2005-07-13 | 多平面技术公司 | Pneumatic diaphragm head having independent retaining ring and multi-region pressure control, and method to use the same |
| CN102084466A (en) * | 2008-07-01 | 2011-06-01 | 应用材料股份有限公司 | Modular base-plate semiconductor polisher architecture |
| CN104023889A (en) * | 2011-12-06 | 2014-09-03 | 国立大学法人大阪大学 | Method for manufacturing solid oxide and device therefor |
| CN109318114A (en) * | 2017-07-31 | 2019-02-12 | 上海新昇半导体科技有限公司 | A kind of final polishing machine of semiconductor crystal wafer and final polishing and cleaning method |
| CN109648451A (en) * | 2018-12-29 | 2019-04-19 | 徐州鑫晶半导体科技有限公司 | The final polishing method of Silicon Wafer and final burnishing device |
| CN212977873U (en) * | 2020-05-12 | 2021-04-16 | 张志恒 | Semiconductor wafer polishing device |
| CN111941267A (en) * | 2020-08-13 | 2020-11-17 | 张俊玲 | Semiconductor silicon wafer polishing machine |
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