CN114700871A - Third-generation semiconductor chemical mechanical polishing device - Google Patents
Third-generation semiconductor chemical mechanical polishing device Download PDFInfo
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- CN114700871A CN114700871A CN202210241442.XA CN202210241442A CN114700871A CN 114700871 A CN114700871 A CN 114700871A CN 202210241442 A CN202210241442 A CN 202210241442A CN 114700871 A CN114700871 A CN 114700871A
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- 238000005498 polishing Methods 0.000 title claims abstract description 199
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 239000000126 substance Substances 0.000 title claims abstract description 22
- 230000007246 mechanism Effects 0.000 claims abstract description 68
- 239000007788 liquid Substances 0.000 claims description 74
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 57
- 238000011084 recovery Methods 0.000 claims description 27
- 238000002156 mixing Methods 0.000 claims description 12
- 238000004064 recycling Methods 0.000 claims description 2
- 230000003044 adaptive effect Effects 0.000 claims 1
- 230000033001 locomotion Effects 0.000 abstract description 11
- 230000006835 compression Effects 0.000 abstract description 6
- 238000007906 compression Methods 0.000 abstract description 6
- 238000012545 processing Methods 0.000 abstract description 2
- 239000002351 wastewater Substances 0.000 description 29
- 230000008878 coupling Effects 0.000 description 12
- 238000010168 coupling process Methods 0.000 description 12
- 238000005859 coupling reaction Methods 0.000 description 12
- 230000005389 magnetism Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 239000007800 oxidant agent Substances 0.000 description 7
- 230000001590 oxidative effect Effects 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 239000005708 Sodium hypochlorite Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000012286 potassium permanganate Substances 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
- B24B55/03—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant designed as a complete equipment for feeding or clarifying coolant
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention belongs to the technical field of third-generation semiconductor processing, and discloses a third-generation semiconductor chemical mechanical polishing device which comprises a workbench, a hydraulic rod, a large polishing machine disc and a polishing pad, wherein a connecting mechanism is fixedly connected with the telescopic end of the hydraulic rod, a connecting ring is movably sleeved on the outer surface of the hydraulic rod, a fixed cylinder is fixedly installed inside the connecting ring, a spring is movably sleeved inside the fixed cylinder, a magnetic suction ring is fixedly installed inside the fixed cylinder, and a magnetic suction block is fixedly connected to the bottom end of the connecting mechanism. According to the invention, the magnetic attraction block is driven to gradually attract the magnetic attraction ring and finally adsorb together through the movement of the connecting mechanism, the vertical position of the connecting mechanism is kept still along with the stop movement of the hydraulic rod, and the degree of compression of the spring is stabilized through the cooperation of the magnetic attraction ring and the magnetic attraction block, so that the stable compression of the wafer is realized, and the polishing stability of the wafer is kept.
Description
Technical Field
The invention belongs to the technical field of third-generation semiconductor processing, and particularly relates to a third-generation semiconductor chemical mechanical polishing device.
Background
Due to the development and application of electric vehicles and 5G, the demand for third-generation semiconductor materials such as silicon carbide, gallium nitride and the like is increasing, but due to the characteristics of high hardness, high physical property stability and the like of the third-generation semiconductor materials, the manufacturing difficulty of the third-generation semiconductor substrate is extremely high, wherein the third-generation semiconductor substrate is particularly reflected in the chemical mechanical polishing process of a wafer; in order to make the wafer reach the epitaxial standard, the wafer needs to be subjected to ultra-precise chemical mechanical polishing; therefore, a third generation semiconductor chemical mechanical polishing device is needed.
At present, the existing third-generation semiconductor chemical mechanical polishing device mainly fixes a wafer on a carrying disc at the bottom of a pressure disc, and presses down and rotates along with the rotation of the pressure disc, and polishing and grinding are carried out by matching with polishing liquid.
Meanwhile, the top of the large disc of the polishing machine is not provided with a shielding measure, so that the polishing liquid wastewater can be thrown away by the high-speed rotating wafer during polishing, the workbench is difficult to clean, meanwhile, the polishing liquid wastewater needs to be recovered to a groove wastewater area in the middle of the large disc of the polishing machine, but the high-speed rotating wafer and the polishing pad shield a backflow route, and therefore the recovery efficiency is reduced.
In addition, because conventional chemical mechanical polishing hardly generates removal amount for third-generation semiconductor materials such as silicon carbide and gallium nitride, an oxidant such as sodium hypochlorite, potassium permanganate or hydrogen peroxide is required to be added into polishing solution to enhance the oxidizability of the polishing solution, so that the chemical mechanical polishing rate of a wafer is improved, but the traditional oxidant is required to be weighed and mixed to influence the working efficiency, in the using process, the concentration of the oxidant is gradually reduced, so that the oxidizability of the polishing solution is reduced, further, the polishing rate is reduced, and part of the oxidant has the problem of environmental protection, and the using cost is high.
Disclosure of Invention
The present invention is directed to a third generation chemical mechanical polishing apparatus for semiconductor, which solves the above problems of the prior art.
In order to achieve the above purpose, the invention provides the following technical scheme: a third-generation semiconductor chemical mechanical polishing device comprises a workbench, a hydraulic rod, a large polishing machine disc and a polishing pad, wherein a connecting mechanism is fixedly connected with the telescopic end of the hydraulic rod, a connecting ring is movably sleeved on the outer surface of the hydraulic rod, a fixed cylinder is fixedly installed inside the connecting ring, a spring is movably sleeved on the inside of the fixed cylinder, a magnetic suction ring is fixedly installed inside the fixed cylinder, a magnetic suction block is fixedly connected to the bottom end of the connecting mechanism, a movable box is fixedly installed at the bottom of the connecting ring, a power mechanism is arranged inside the movable box, the pressure disc is fixedly connected with the movable box through a connecting column, a wafer is adsorbed at the bottom of the pressure disc, a recovery groove is formed in the top of the large polishing machine disc, and a liquid supply mechanism is arranged on the back surface of the workbench;
this device is at the during operation, spout the polishing solution to the inside of burnishing machine deep bid through supplying liquid mechanism, make the surface of polishing pad be covered with the polishing solution, start the hydraulic stem and drive pressure disc and wafer downstream, when the wafer moves down to the position with the polishing pad contact, coupling mechanism continues downstream and compression spring under the effect of hydraulic stem, along with coupling mechanism's the lower motion, drive magnetism suction block downstream and be close with magnetism suction ring gradually, at this moment, stop the liquid depression bar, make magnetism suction block and magnetism suction ring keep mutual magnetism suction contact, the spring is compressed extremely, then transmit pressure to pressure disc and wafer, the starter motor drives pressure disc and wafer rotation through power unit, high-speed pivoted wafer and polishing pad take place the friction and polish the operation.
Through being provided with the spring and being connected with coupling mechanism and solid fixed cylinder respectively, in the in-process that hydraulic stem drove coupling mechanism and moved down, make the wafer contact and friction with the polishing pad, coupling mechanism compression spring and with pressure transmission to pressure dish and wafer on the one hand of the downward movement, and simultaneously, through coupling mechanism's removal, it inhales the piece gradually and inhales the ring inter attraction and finally adsorbs together with magnetism to drive magnetism, along with the stop movement of hydraulic stem, coupling mechanism's vertical position keeps motionless, the cooperation through magnetism inhale the ring and inhale the piece is stabilized the degree that the spring compressed gets off, thereby realize the pressurized of wafer and stabilize, keep the polishing stability of wafer.
Preferably, a bulge is arranged on the outer edge of the top of the large polishing machine disc, a liquid collecting groove is formed in the inner side face of the bulge, a communicating groove communicated with the recovery groove is formed in the top of the liquid collecting groove, and a polishing pad is fixedly connected to the top of the large polishing machine disc;
one part of the polishing solution wastewater subjected to wafer polishing and grinding directly flows into the recovery tank and is recovered, the other part of the polishing solution wastewater is driven by the wafer rotating at a high speed and is distributed on the inner wall of the bulge at the top of the large disc of the polishing machine, and along with the increase of the amount of the polishing solution wastewater, the wastewater starts to flow into the communication tank along the liquid collecting tank and finally flows back to the recovery tank.
Make the polishing solution waste water that is driven by the high-speed rotation of wafer along the inclined plane of the protruding inner wall in burnishing machine deep bid top get into the inner wall of collecting tank through seting up the collecting tank, then converge to the inner wall of collecting tank through the intercommunication groove, when the inside of burnishing machine deep bid is injected to the polishing solution, because the opening part at collecting tank top is higher than the upper surface of polishing pad, consequently need not anxious polishing solution and flow into the collecting tank and cause the waste, and simultaneously, the inclined plane design of the protruding inner wall in burnishing machine deep bid top can avoid the inside that the polishing solution that is not through polishing treatment gets into the collecting tank, good filtering capability has been realized, thereby the high-efficient recovery function of polishing solution waste water has been realized.
Preferably, the liquid supply mechanism comprises a fixed plate, a polishing solution barrel and an ozone generator are fixedly mounted at the top of the fixed plate, the ozone generator is communicated with the polishing solution barrel through a first communicating pipe, the polishing solution barrel is fixedly communicated with a second communicating pipe through an ozone and polishing solution mixing device, the other end of the ozone and polishing solution mixing device extends to the top of a large disc of the polishing machine, and polishing solution is placed in the polishing solution barrel;
starting an ozone generator, generating ozone, introducing the ozone into polishing solution in a polishing solution barrel through a first communicating pipe, dissolving the ozone, starting a second communicating pipe, sucking out the polishing solution, and injecting the polishing solution into the large disc of the polishing machine through an ozone and polishing solution mixing device.
Through being provided with ozone generator output ozone and through the polishing solution of a communicating pipe dissolved in the polishing solution bucket, the oxidizing property of ozone than other most oxidants is all strong, can further promote the mechanical polishing efficiency of device, and ozone is added by automatic the production of system and according to program control simultaneously, has promoted work efficiency, and the ozone cost is extremely low, easily acquires, and ozone component decomposition speed in the polishing solution is extremely fast, can not cause the influence to the environment, environmental protection more.
Preferably, the power mechanism comprises a motor and connecting columns, an output shaft of the motor is fixedly connected with driving gears, the number of the connecting columns is four, the connecting columns are distributed on the outer surface of the driving gears at equal angles, a driven gear is fixedly sleeved on the upper part of the outer surface of each connecting column, the driving gears are meshed with the driven gears, two limiting rings distributed above and below the driven gears are fixedly sleeved on the outer surface of each connecting column, and the two limiting rings are respectively in limiting contact with the upper side and the lower side of the inner wall of the movable box;
the motor strengthens transmission for spliced pole and pressure disc through the moment of torsion with power through driven gear and driving gear to maintain the comparatively stable rotational speed of pressure disc and wafer, simultaneously, two spacing rings are used for maintaining the spliced pole and removing the inside support of incasement portion.
Preferably, the bottom end of the outer surface of the connecting mechanism is in fit and sleeve joint with the inner wall of the fixed cylinder through an annular bulge, the outer surface of the connecting mechanism is movably sleeved with a spring, and the connecting mechanism is elastically connected with the spring through the annular bulge;
the spring buffers the unstable pressure from the hydraulic rod, and meanwhile, the spring is gradually compressed and transfers the pressure downwards along with the downward movement of the connecting mechanism, so that the pressure transfer to the wafer stage is formed, and the wafer is maintained at a proper pressure after being in contact with the polishing pad.
Preferably, the cross section of the liquid collecting groove is in a C shape which is symmetrical left and right, and the bottom of the liquid collecting groove is communicated with the communicating groove;
the collecting tank is used for communicating between burnishing machine deep bid top and the intercommunication groove, along with the high-speed rotation of wafer, the polishing solution waste water that is driven to fly up moves along the bellied inner wall in burnishing machine deep bid top, along with the increase of waste water volume, it climbs to the inside of collecting tank along the inclined plane of the bellied inner wall in burnishing machine deep bid top gradually, then converges to the inside of intercommunication groove through the collecting tank gradually, through the continuous accumulation of polishing solution waste water, finally flow back to the inside of collecting tank and accomplished the recovery.
Preferably, the ozone generator can be selectively communicated with the polishing solution barrel through a first communicating pipe or directly communicated with a second communicating pipe;
the ozone generator produces ozone according to the instruction of the system controller after being started, the polishing solution in the polishing solution barrel can be introduced and dissolved in the polishing solution barrel through the first communicating pipe, meanwhile, the first communicating pipe can be directly communicated with the second communicating pipe, the polishing solution in the polishing solution barrel is mixed with the ozone in the second communicating pipe, and the mixed polishing solution is sprayed into the large disc of the polishing machine through the ozone and polishing solution mixing device.
Preferably, the number of the communicating grooves is eight, and the eight communicating grooves are uniformly distributed on the inner wall of the recovery groove and are respectively communicated with the recovery groove and the liquid collecting groove;
the quantity of intercommunication groove is eight, and it communicates with the catch basin respectively for the polishing solution of gathering in the inside catch basin can converge smoothly to the accumulator under the slope design of intercommunication groove, thereby improves the recovery efficiency of polishing solution waste water. .
Preferably, the connecting mechanism consists of a disc and four guide posts, the disc is fixedly connected with the telescopic end of the hydraulic rod, and the guide posts extend downwards into the connecting ring and are clamped in the connecting ring through circular protrusions;
the disc is fixedly connected with an output shaft of the hydraulic rod, and then is in sleeve joint with the connecting ring through four guide posts at the bottom, so that the connecting ring is supported on one hand, and meanwhile, the pressure disc and the wafer are pressed through the spring when the connecting mechanism moves downwards.
The invention has the following beneficial effects:
1. according to the invention, the springs are respectively connected with the connecting mechanism and the fixed cylinder, so that the wafer is contacted and rubbed with the polishing pad in the process that the hydraulic rod drives the connecting mechanism to move downwards, on one hand, the connecting mechanism which moves downwards compresses the springs and transmits the pressure to the pressure plate and the wafer, on the other hand, the magnetic attraction block is driven to gradually attract the magnetic attraction ring and finally adsorb the magnetic attraction ring together through the movement of the connecting mechanism, the vertical position of the connecting mechanism is kept still along with the stop movement of the hydraulic rod, and the degree of compression of the springs is stabilized through the cooperation of the magnetic attraction ring and the magnetic attraction block, so that the stable compression of the wafer is realized, and the polishing stability of the wafer is kept.
2. According to the invention, the liquid collecting groove is formed, so that polishing solution wastewater driven by the high-speed rotation of the wafer enters the inner wall of the liquid collecting groove along the inclined plane of the convex inner wall at the top of the large disc of the polishing machine, and then flows to the inner wall of the recovery groove through the communicating groove.
3. The ozone generator is arranged to generate ozone, the ozone is dissolved in the polishing solution barrel through the first communicating pipe, the ozone is stronger in oxidizability than other most oxidants, the mechanical polishing efficiency of the device can be further improved, meanwhile, the ozone is automatically generated by the system and added according to program control, the working efficiency is improved, the ozone cost is extremely low, the ozone is easy to obtain, the ozone component in the polishing solution is extremely high in decomposition speed, the environment cannot be influenced, and the polishing solution is more environment-friendly.
Drawings
FIG. 1 is a schematic front perspective view of the structure of the present invention;
FIG. 2 is a schematic perspective view of the back side of the structure of the present invention;
FIG. 3 is a schematic view in partial cutaway in elevation of the structure of the present invention;
FIG. 4 is an enlarged view of the structure of FIG. 3 at A according to the present invention;
FIG. 5 is a schematic side view of the structure of the present invention;
FIG. 6 is a schematic structural view of a power mechanism according to the present invention;
FIG. 7 is an exploded view of the hydraulic rod, the connecting mechanism, the connecting ring, the fixing cylinder, the magnetic ring, the spring and the magnetic block of the present invention;
FIG. 8 is a schematic view of the liquid supply mechanism according to the present invention.
In the figure: 1. a work table; 2. a hydraulic lever; 3. a connecting mechanism; 4. a connecting ring; 5. a motor; 6. a liquid supply mechanism; 61. a fixing plate; 62. a polishing solution barrel; 63. an ozone generator; 64. a first communicating pipe; 65. a second communicating pipe; 66. an ozone and polishing solution mixing device; 7. a mobile box; 8. connecting columns; 9. a pressure disc; 10. a wafer; 11. polishing a large disc; 12. a polishing pad; 13. a recovery tank; 14. a liquid collecting tank; 15. a communicating groove; 16. a fixed cylinder; 17. a magnetic ring; 18. a spring; 19. a magnetic block; 20. a driving gear; 21. a driven gear.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1 to 8, in the embodiment of the present invention, a third generation semiconductor chemical mechanical polishing apparatus comprises a worktable 1, a hydraulic rod 2, the polishing machine comprises a large polishing disk 11 and a polishing pad 12, a connecting mechanism 3 is fixedly connected with the telescopic end of a hydraulic rod 2, a connecting ring 4 is movably sleeved on the outer surface of the hydraulic rod 2, a fixed cylinder 16 is fixedly installed inside the connecting ring 4, a spring 18 is movably sleeved inside the fixed cylinder 16, a magnetic suction ring 17 is fixedly installed inside the fixed cylinder 16, a magnetic suction block 19 is fixedly connected with the bottom end of the connecting mechanism 3, a moving box 7 is fixedly installed at the bottom of the connecting ring 4, a power mechanism is arranged inside the moving box 7, a pressure disk 9 is fixedly connected with the inside of the moving box 7 through a connecting column 8, a wafer 10 is adsorbed at the bottom of the pressure disk 9, a recovery groove 13 is formed in the top of the large polishing disk 11, and a liquid supply mechanism 6 is arranged on the back face of a workbench 1;
when the device works, polishing liquid is sprayed into a large disc 11 of a polishing machine through a liquid supply mechanism 6, the surface of a polishing pad 12 is fully covered with the polishing liquid, a liquid pressure rod 2 is started and drives a pressure disc 9 and a wafer 10 to move downwards, when the wafer 10 moves downwards to a position contacted with the polishing pad 12, a connecting mechanism 3 continues to move downwards under the action of the liquid pressure rod 2 and compresses a spring 18, a magnetic suction block 19 is driven to move downwards along with the downward movement of the connecting mechanism 3 and is gradually close to a magnetic suction ring 17, at the moment, the liquid pressure rod 2 is stopped, the magnetic suction block 19 and the magnetic suction ring 17 are kept in magnetic suction contact with each other, the spring 18 is compressed to the extreme, then the pressure is transmitted to the pressure disc 9 and the wafer 10, a motor 5 is started and drives the pressure disc 9 and the wafer 10 to rotate through a power mechanism, and the wafer 10 rotating at a high speed rubs with the polishing pad 12 and performs polishing and grinding operations.
Through being provided with spring 18 and being connected with coupling mechanism 3 and fixed cylinder 16 respectively, in the in-process that hydraulic stem 2 drove coupling mechanism 3 and move down, make wafer 10 contact and friction with polishing pad 12, coupling mechanism 3 that moves down compresses spring 18 and transmits pressure to pressure disc 9 and wafer 10 on the one hand, and simultaneously, through coupling mechanism 3's removal, it attracts piece 19 gradually and attracts ring 17 inter attraction and finally adsorbs together to drive magnetism, along with hydraulic stem 2's stop movement, coupling mechanism 3's vertical position keeps motionless, the degree that spring 18 compressed is stabilized through the cooperation of ring 17 and the piece 19 of magnetism of inhaling, thereby realize wafer 10's pressurized stability, keep wafer 10's polishing stability.
Wherein, the outer edge of the top of the large polishing machine disc 11 is provided with a bulge, the inner side surface of the bulge is provided with a liquid collecting groove 14, the top of the liquid collecting groove 14 is provided with a communicating groove 15 communicated with a recycling groove 13, and the top of the large polishing machine disc 11 is fixedly connected with a polishing pad 12;
one part of the polishing solution wastewater polished and polished by the wafer 10 directly flows into the recovery tank 13 and is recovered, the other part of the polishing solution wastewater is driven by the wafer 10 rotating at a high speed and is distributed on the inner wall protruding at the top of the large disc 11 of the polishing machine, and along with the increase of the amount of the polishing solution wastewater, the wastewater starts to flow into the communicating tank 15 along the liquid collecting tank 14 and finally flows back to the recovery tank 13.
Make the polishing solution waste water that is driven by the high-speed rotation of wafer 10 through seting up collecting tank 14 and get into the inner wall of collecting tank 14 along the inclined plane of the protruding inner wall in burnishing machine deep bid 11 top, then converge to the inner wall of accumulator 13 through communicating groove 15, when the inside of burnishing machine deep bid 11 is injected to the polishing solution, because the opening part at collecting tank 14 top is higher than the upper surface of polishing pad 12, consequently need not anxious polishing solution and flow into collecting tank 14 and cause the waste, and simultaneously, the inclined plane design of the protruding inner wall in burnishing machine deep bid 11 top can avoid the polishing solution that is not through polishing treatment to get into the inside of collecting tank 14, good filtering capability has been realized, thereby the high-efficient recovery function of polishing solution waste water has been realized.
The liquid supply mechanism 6 comprises a fixing plate 61, a polishing liquid barrel 62 and an ozone generator 63 are fixedly mounted at the top of the fixing plate 61, the ozone generator 63 is communicated with the polishing liquid barrel 62 through a first communicating pipe 64, the polishing liquid barrel 62 is fixedly communicated with a second communicating pipe 65 through an ozone and polishing liquid mixing device 66, the other end of the ozone and polishing liquid mixing device 66 extends to the top of the large disc 11 of the polishing machine, and polishing liquid is placed in the polishing liquid barrel 62;
the ozone generator 63 is started to generate ozone, the ozone is then introduced into the polishing solution in the polishing solution barrel 62 through the first communication pipe 64 and dissolved, and then the second communication pipe 65 is started to suck out the polishing solution and inject the polishing solution into the large disk 11 of the polishing machine through the ozone and polishing solution mixing device 66.
Through being provided with ozone generator 63 output ozone and through the polishing solution of a communicating pipe 64 dissolution in polishing solution bucket 62, the oxidizing nature of ozone than other most oxidants is all strong, can further promote the mechanical polishing efficiency of device, and ozone is added by the automatic production of system and according to program control simultaneously, has promoted work efficiency, and ozone cost is extremely low, easily acquires, and ozone component decomposition speed in the polishing solution is extremely fast, can not cause the influence to the environment, environmental protection more.
The power mechanism comprises a motor 5 and connecting columns 8, an output shaft of the motor 5 is fixedly connected with driving gears 20, the number of the connecting columns 8 is four, the connecting columns are distributed on the outer surfaces of the driving gears 20 at equal angles, the upper part of the outer surface of each connecting column 8 is fixedly sleeved with a driven gear 21, the driving gears 20 are meshed with the driven gears 21, the outer surface of each connecting column 8 is fixedly sleeved with two limiting rings distributed above and below the driven gear 21, and the two limiting rings are respectively in limiting contact with the upper side and the lower side of the inner wall of the movable box 7;
the motor 5 transmits power to the connecting column 8 and the pressure plate 9 through the torque enhancement by the driven gear 21 and the driving gear 20, so that the stable rotating speed of the pressure plate 9 and the wafer 10 is maintained, and meanwhile, the two limiting rings are used for maintaining the support of the connecting column 8 in the moving box 7.
The bottom end of the outer surface of the connecting mechanism 3 is in fit and sleeve joint with the inner wall of the fixed cylinder 16 through an annular bulge, the outer surface of the connecting mechanism 3 is movably sleeved with a spring 18, and the connecting mechanism 3 is elastically connected with the spring 18 through the annular bulge;
the spring 18 buffers the unstable pressure from the hydraulic rod 2, and the spring 18 is gradually compressed and transmits the pressure downward as the connecting mechanism 3 moves downward, so that the pressure transmission to the wafer 10 is formed, and the wafer 10 maintains a proper pressure after contacting the polishing pad 12.
Wherein the cross section of the liquid collecting groove 14 is in a bilaterally symmetrical C shape, and the bottom of the liquid collecting groove 14 is communicated with the communicating groove 15;
the liquid collecting groove 14 is used for communicating the top of the large disc 11 of the polishing machine with the communicating groove 15, along with the high-speed rotation of the wafer 10, the polishing liquid wastewater driven to fly up moves along the inner wall of the top protrusion of the large disc 11 of the polishing machine, along with the increase of the amount of the wastewater, the polishing liquid wastewater gradually climbs towards the inside of the liquid collecting groove 14 along the inclined plane of the inner wall of the top protrusion of the large disc 11 of the polishing machine, then gradually converges to the inside of the communicating groove 15 through the liquid collecting groove 14, and finally reflows to the inside of the recovery groove 13 and the recovery is completed through the continuous accumulation of the polishing liquid wastewater.
Wherein, the ozone generator 63 can be selectively communicated with the polishing solution barrel 62 through a first communicating pipe 64 or directly communicated with a second communicating pipe 65;
the ozone generator 63 generates ozone according to the instruction of the system controller after being started, the polishing solution in the polishing solution barrel 62 can be introduced and dissolved in the polishing solution through the first communicating pipe 64, and meanwhile, the first communicating pipe 64 can also be directly communicated with the second communicating pipe 65, so that the polishing solution from the polishing solution barrel 62 is mixed with the ozone in the second communicating pipe 65 and is sprayed into the large disc 11 of the polishing machine through the ozone and polishing solution mixing device 66.
The number of the communicating grooves 15 is eight, and the eight communicating grooves 15 are uniformly distributed on the inner wall of the recovery groove 13 and are respectively communicated with the recovery groove 13 and the liquid collecting groove 14;
the number of the communicating grooves 15 is eight, and the communicating grooves are respectively communicated with the liquid collecting groove 14, so that the polishing liquid collected in the liquid collecting groove 14 can smoothly converge to the recovery groove 13 under the inclined design of the communicating grooves 15, and the recovery efficiency of the polishing liquid wastewater is improved. .
The connecting mechanism 3 consists of a disc and four guide posts, the disc is fixedly connected with the telescopic end of the hydraulic rod 2, and the guide posts extend downwards into the connecting ring 4 and are clamped in the connecting ring 4 through circular protrusions;
the disc is fixedly connected with an output shaft of the hydraulic rod 2, and then is in sleeve fit with the connecting ring 4 through four guide posts at the bottom, so that the connecting ring 4 is supported on one hand, and meanwhile, the pressure disc 9 and the wafer 10 are pressed through the spring 18 when the connecting mechanism 3 moves downwards.
The working principle and the using process are as follows:
when the device works, polishing liquid is sprayed into the large disc 11 of the polishing machine through the liquid supply mechanism 6, the ozone generator 63 is started, ozone is generated and then introduced into the polishing liquid in the polishing liquid barrel 62 through the first communicating pipe 64 and dissolved, then the second communicating pipe 65 is started to suck out the polishing liquid and inject the polishing liquid into the large disc 11 of the polishing machine through the ozone and polishing liquid mixing device 66, so that the surface of the polishing pad 12 is fully covered with the polishing liquid, the liquid pressure rod 2 is started and drives the pressure disc 9 and the wafer 10 to move downwards, when the wafer 10 moves downwards to a position contacting with the polishing pad 12, the connecting mechanism 3 continues to move downwards under the action of the hydraulic rod 2 and compresses the spring 18, along with the downward movement of the connecting mechanism 3, the magnetic suction block 19 is driven to move downwards and gradually approaches the magnetic suction ring 17, at the moment, the liquid pressure rod 2 is stopped, so that the magnetic suction block 19 and the magnetic suction ring 17 are kept in magnetic suction contact with each other, the spring 18 is compressed to the extreme, then the pressure is transmitted to the pressure disc 9 and the wafer 10, the motor 5 is started, the pressure disc 9 and the wafer 10 are driven to rotate through the power mechanism, and the wafer 10 rotating at a high speed rubs with the polishing pad 12 to carry out polishing and grinding operations;
one part of the polishing solution wastewater subjected to polishing and grinding treatment on the wafer 10 directly flows into the recovery tank 13 and is recovered, the other part of the polishing solution wastewater is driven by the wafer 10 rotating at a high speed and is distributed on the raised inner wall of the top of the large disc 11 of the polishing machine, and along with the increase of the amount of the polishing solution wastewater, the wastewater starts to flow into the communicating tank 15 along the liquid collecting tank 14 and finally flows back to the recovery tank 13.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (9)
1. The utility model provides a third generation semiconductor chemical mechanical polishing device, includes workstation (1), hydraulic stem (2), burnishing machine deep bid (11) and polishing pad (12), its characterized in that: the telescopic end of the hydraulic rod (2) is fixedly connected with a connecting mechanism (3), the outer surface of the hydraulic rod (2) is movably sleeved with a connecting ring (4), a fixed cylinder (16) is fixedly arranged in the connecting ring (4), a spring (18) is movably sleeved in the fixed cylinder (16), a magnetic ring (17) is fixedly arranged in the fixed cylinder (16), a magnetic block (19) is fixedly connected at the bottom end of the connecting mechanism (3), a movable box (7) is fixedly arranged at the bottom of the connecting ring (4), a power mechanism is arranged in the movable box (7) and is fixedly connected with a pressure disc (9) through a connecting column (8), the wafer (10) is adsorbed at the bottom of the pressure disc (9), a recovery tank (13) is arranged at the top of the large disc (11) of the polishing machine, and a liquid supply mechanism (6) is arranged on the back of the workbench (1).
2. A third generation semiconductor chemical mechanical polishing apparatus according to claim 1, wherein: the outer edge at the top of the large polishing machine disc (11) is provided with a bulge and the inner side surface of the bulge is provided with a liquid collecting groove (14), the top of the liquid collecting groove (14) is provided with a communicating groove (15) communicated with a recycling groove (13), and the top of the large polishing machine disc (11) is fixedly connected with a polishing pad (12).
3. A third generation semiconductor chemical mechanical polishing apparatus according to claim 1, wherein: the liquid supply mechanism (6) comprises a fixing plate (61), a polishing liquid barrel (62) and an ozone generator (63) are fixedly mounted at the top of the fixing plate (61), the ozone generator (63) is communicated with the polishing liquid barrel (62) through a first communicating pipe (64), the polishing liquid barrel (62) is fixedly communicated with a second communicating pipe (65) through an ozone and polishing liquid mixing device (66), the other end of the ozone and polishing liquid mixing device (66) extends to the top of the large polishing machine disc (11), and polishing liquid is placed in the polishing liquid barrel (62).
4. A third generation semiconductor chemical mechanical polishing apparatus according to claim 1, wherein: power unit includes motor (5) and spliced pole (8), the output shaft fixedly connected with driving gear (20) of motor (5), the quantity of spliced pole (8) is four and is the surface of angular distribution such as in driving gear (20), every the upper portion of spliced pole (8) surface is all fixed the cover and is connect driven gear (21), driving gear (20) and driven gear (21) mesh mutually, the outer fixed surface of spliced pole (8) has cup jointed two spacing rings that distribute about driven gear (21), two the spacing ring respectively with the upper and lower both sides spacing contact of removal case (7) inner wall.
5. A third generation semiconductor chemical mechanical polishing apparatus according to claim 1, wherein: the bottom end of the outer surface of the connecting mechanism (3) is connected with the inner wall of the fixed cylinder (16) in a sleeved mode through an annular bulge in an adaptive mode, a spring (18) is movably connected to the outer surface of the connecting mechanism (3) in a sleeved mode, and the connecting mechanism (3) is elastically connected with the spring (18) through the annular bulge.
6. A third generation semiconductor chemical mechanical polishing apparatus according to claim 2, wherein: the cross section of the liquid collecting groove (14) is in a C shape which is symmetrical left and right, and the bottom of the liquid collecting groove (14) is communicated with the communicating groove (15).
7. A third generation semiconductor chemical mechanical polishing apparatus according to claim 3, wherein: the ozone generator (63) can be communicated with the polishing solution barrel (62) through a first communicating pipe (64) or directly communicated with a second communicating pipe (65).
8. A third generation semiconductor chemical mechanical polishing apparatus according to claim 2, wherein: the number of the communicating grooves (15) is eight, and the eight communicating grooves (15) are uniformly distributed on the inner wall of the recovery groove (13) and are respectively communicated with the recovery groove (13) and the liquid collecting groove (14).
9. A third generation semiconductor chemical mechanical polishing apparatus according to claim 1, wherein: the connecting mechanism (3) is composed of a disc and four guide posts, the disc is fixedly connected with the telescopic end of the hydraulic rod (2), and the guide posts extend downwards to the inside of the connecting ring (4) and are clamped in the connecting ring (4) through circular ring protrusions.
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| CN114700871B (en) | 2023-11-24 |
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