CN115091359B - polishing carrier - Google Patents
polishing carrier Download PDFInfo
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- CN115091359B CN115091359B CN202210581245.2A CN202210581245A CN115091359B CN 115091359 B CN115091359 B CN 115091359B CN 202210581245 A CN202210581245 A CN 202210581245A CN 115091359 B CN115091359 B CN 115091359B
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- Prior art keywords
- base
- polishing
- force application
- assembly
- force
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
Abstract
The application relates to a polishing carrier which is used for bearing a polishing sheet to polish on a polishing pad and can improve the flatness of the polishing sheet so as to solve the problem of poor flatness of the polishing sheet. The polishing carrier comprises: a base assembly including a first chamber and a second chamber for being adjustably pressurized to provide a variable amount of force, respectively; the first force application component is arranged on the base component and is used for connecting the throwing piece so as to apply force to the throwing piece under the action of the first cavity; and the second force application component is arranged on the base component, and the second force application component is relatively movably surrounded around the first force application component and is used for applying force to the area, around the polishing sheet, on the polishing pad under the action of the second cavity.
Description
Technical Field
The application relates to the technical field of wafer and chip processing, in particular to a polishing carrier applied to polishing wafers or chips and the like.
Background
Chemical mechanical polishing plays an important role in the semiconductor processing technology, and the principle is that wafers or other substrate materials in the processing process are subjected to mirror surface treatment through chemical corrosion and mechanical force, and defect damage caused by the previous processing step on the polished wafer surface can be removed to a certain extent.
In the prior art, in the processing process of silicon wafers and chip fields, the requirements on flatness and surface roughness are different, so that two main stream processing modes are derived: one is to use a method of making a plurality of pressurizing chambers to pressurize the polishing sheet (including wafer and chip, the same applies below) by using the air bag as medium; another is the way to pressurize the polishing plate using the ceramic disc as a medium. The advantage of pressurizing through the gasbag is that facing the throwing piece of various topography, can implement and exert different pressures to different areas and reach the goal of high flatness, but the throwing piece that this way obtains, its topography produces the wave pattern easily, can't meet the requirement of the throwing piece of high specification; meanwhile, because the air bag is made of soft materials, the air bag has limitations on force transmission and force transmission limit, and cannot bear the processing mode of removing the polished piece in a large amount under large pressure. The ceramic disc is used as a medium for pressurizing, so that the problems can be solved, and the force can be better transmitted to the throwing piece due to the high rigidity and the high flatness of the ceramic disc, and meanwhile, the large deformation can not be generated under the large pressure, so that the wafer is taken as an example, and the main stream wafer manufacturer mainly takes the ceramic disc pressurizing mode as the main stream; meanwhile, in the field of wafer regeneration, the ceramic disc pressurizing mode is widely applied.
However, the existing ceramic disc pressurizing mode has the advantages of large overall surface flatness and removal amount, but also has the problem that the pressure distribution at the edge of the polishing piece cannot be adjusted, and the problem of flatness of over-polishing or less-polishing of the edge of the polishing piece due to deformation of the polishing pad under pressure is easy to occur; that is, the ceramic disc pressing technique in the prior art has a problem of poor flatness of the polished sheet.
Disclosure of Invention
An advantage of the present application is to provide a polishing carrier that can improve the flatness of a polishing sheet to solve the problem of poor flatness of the polishing sheet.
Another advantage of the present application is to provide a polishing carrier that, in one embodiment of the present application, reduces or solves the problem of over-polishing or less-polishing of the edge of a polishing pad, helping to improve the polishing quality of the polishing pad.
Another advantage of the present application is to provide a polishing carrier, wherein in one embodiment of the present application, the polishing carrier is capable of achieving control of polishing pressure by injecting a required air pressure into a first chamber and a second chamber, respectively, to apply different pressures to a first pressing plate and a second pressing plate, respectively, so as to improve polishing quality.
Another advantage of the present application is to provide a polishing carrier that, in one embodiment of the present application, is capable of pressing a polishing pad against a polishing pad by a first pressing plate while also pressing a polishing pad against the polishing pad at a location around the polishing pad by a second pressing plate to reduce problems of over-polishing or under-polishing of the edge of the polishing pad due to compressive deformation of the polishing pad.
Another advantage of the present application is to provide a polishing carrier, wherein in one embodiment of the present application, the polishing carrier is capable of improving stress distribution uniformity of a first pressing plate by providing a stress control chamber between a conductive plate and the first pressing plate, so as to more uniformly conduct pressure to a polishing sheet, and avoid deformation of the polishing sheet due to uneven compression, thereby affecting polishing quality.
Another advantage of the present application is to provide a polishing carrier, wherein in one embodiment of the present application, the polishing carrier is capable of absorbing angular direction fluctuations of a polishing pad generated during polishing through a first chamber and a second chamber, so as to better enhance polishing quality.
Another advantage of the present application is to provide a polishing carrier in which in one embodiment of the present application, the polishing carrier is capable of reducing the gap between the second pressing plate and the first pressing plate by the special structure of the second pressing plate, so as to prevent the chemical liquid from entering the inside of the polishing carrier during the chemical mechanical polishing process, thereby helping to reduce the risk of corrosion of the internal structure of the polishing carrier by the chemical liquid.
Another advantage of the present application is to provide a polishing carrier in which expensive materials or complex structures are not required in the present application in order to achieve the above advantages or objectives. The present application thus successfully and efficiently provides a solution that not only provides a simple polishing carrier, but also increases the practicality and reliability of the polishing carrier.
To achieve at least one of the above or other advantages and objects of the application, there is provided a polishing carrier for carrying a polishing pad for polishing, the polishing carrier comprising:
a base assembly including a first chamber and a second chamber for being adjustably pressurized to provide a variable amount of force, respectively;
a first force application assembly disposed on the base assembly and configured to connect to the polishing pad to apply a force to the polishing pad under the action of the first cavity; and
the second force application assembly is arranged on the base assembly, and is relatively movably surrounded around the first force application assembly, and the second force application assembly is used for applying a force to a region, around the polishing sheet, on the polishing pad under the action of the second cavity.
According to one embodiment of the present application, the base assembly includes a first base, a second base, a first conductive pipe, and a second conductive pipe, the first base, the second base, and the first force application assembly being sequentially stacked at intervals, the first conductive pipe being telescopically disposed between the first base and the second base to form the second cavity within the first conductive pipe; the second conductive tube is telescopically disposed between the second base and the first force application assembly to form the first cavity within the second conductive tube; the second force application component is fixedly arranged on the second base.
According to one embodiment of the application, the first and second conductive pipes are a first and a second telescopic pipe, respectively, one end of the first telescopic pipe is fixed to the first base, and the other end of the first telescopic pipe is fixed to the second base; one end of the second telescopic tube is fixed on the second base, and the other end of the second telescopic tube is fixed on the first force application assembly.
According to one embodiment of the application, the base assembly further comprises a pair of first sealing rings and a pair of second sealing rings, the first sealing rings being respectively arranged between the first base and the second base and the two ends of the first telescopic tube; the second sealing rings are respectively and correspondingly arranged between the second base, the first force application assembly and two ends of the second telescopic pipe.
According to one embodiment of the application, the base assembly further comprises a first limit mechanism and a second limit mechanism, the first limit mechanism being disposed between the first base and the second base for limiting a volume adjustment range of the second chamber; the second limiting mechanism is arranged between the second base and the first force application component and used for limiting the volume adjustment range of the first cavity.
According to one embodiment of the application, the first limiting mechanism comprises a first limiting block fixedly arranged on the first base and a first limiting groove correspondingly arranged on the second base, and the first limiting block is matched with the first limiting groove so as to limit the expansion range of the first conducting pipe; the second limiting mechanism comprises a second limiting block fixedly arranged on the second base and a second limiting groove correspondingly arranged on the first force application component, and the second limiting block is matched with the second limiting groove so as to limit the expansion range of the second conductive pipe.
According to one embodiment of the application, the first force application assembly comprises a conductive plate connected with the second conductive pipe and a first force application plate fixedly connected with the conductive plate; the first force application assembly is further provided with a stress control cavity between the conductive plate and the first pressure application plate for controlling stress distribution uniformity on the first pressure application plate.
According to one embodiment of the present application, the second force application assembly includes a support arm fixedly connected to the second base and a second pressing plate fixedly connected to the support arm, the second pressing plate having an annular structure so as to surround the first pressing plate of the first force application assembly; the second pressing plate includes a pressing ring fixedly coupled to the support arm and a flange extending inward from an inner circumferential surface of the pressing ring to reduce a gap between the second pressing plate and the first pressing plate by the flange.
According to one embodiment of the application, the base assembly further comprises a third sealing ring disposed between the first and second force application assemblies, respectively, to seal a gap between the conductive plate and the support arm.
According to one embodiment of the application, the polishing carrier further comprises a protective cover, the protective cover being covered on the exterior of the base assembly.
Drawings
FIG. 1 is a schematic perspective view of a polishing carrier according to one embodiment of the application;
fig. 2 is a schematic perspective cross-sectional view showing a polishing carrier according to the above embodiment of the present application;
FIG. 3 shows a schematic view of an application of a polishing carrier according to the above embodiment of the present application;
FIG. 4 shows an enlarged schematic view of a portion A of the polishing carrier of FIG. 3 in accordance with the application;
fig. 5 shows an enlarged schematic view of a portion B on the polishing carrier of fig. 3 according to the present application.
Description of main reference numerals: 1. polishing the carrier; 10. a base assembly; 101. a first chamber; 102. a second chamber; 103. a joint; 104. an interface; 11. a first base; 12. a second base; 13. a first conductive pipe; 130. a first telescopic tube; 14. a second conductive pipe; 140. a second telescopic tube; 15. a first seal ring; 16. a second seal ring; 17. a first limiting mechanism; 171. a first limiting block; 172. a first limit groove; 18. a second limiting mechanism; 181. a second limiting block; 182. the second limit groove; 19. a third seal ring; 20. a first force application assembly; 21. a conductive plate; 22. a first pressing plate; 23. an adsorption pad; 24. a stress control chamber; 30. a second force application assembly; 31. a support arm; 32. a second pressing plate; 320. a pressing surface; 321. a pressing ring; 322. a flange; 40. and a protective cover.
The foregoing general description of the application will be described in further detail with reference to the drawings and detailed description.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It is noted that when an element is referred to as being "disposed" or "mounted" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "secured to" another element, it can be directly secured to the other element or intervening elements may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "or/and" as used herein includes any and all combinations of one or more of the associated listed items.
The problem of poor polishing flatness of the ceramic disc pressurizing technology in the prior art is considered. In order to solve the problems, the application designs a polishing carrier which can improve the flatness of a polished wafer so as to solve the problem of poor flatness of the polished wafer.
Specifically, referring to fig. 1 to 5, an embodiment of the present application provides a polishing carrier 1 for carrying a polishing wafer W for polishing on a polishing pad M. The polishing carrier 1 can include a base assembly 10, a first force application assembly 20, and a second force application assembly 30. The base assembly 10 includes a first chamber 101 and a second chamber 102 for being respectively adjustably pressurized to provide a variable amount of force. The first force application assembly 20 is disposed on the base assembly 10, and the first force application assembly 20 is used to connect the polishing wafer W to apply a force to the polishing wafer W under the action of the first chamber 101, so that the polishing wafer W can be pressed onto the polishing pad M for polishing. The second force application member 30 is disposed on the base member 10, and the second force application member 30 is movably disposed around the periphery of the first force application member 20 for applying a force to the polishing pad M in a region around the polishing wafer W under the action of the second chamber 102.
It should be noted that, since the air pressure in the first chamber 101 and the second chamber 102 of the base assembly 10 can be adjusted, the polishing carrier 1 of the present application can change the amount of the force indirectly applied to the polishing pad M by the first force application assembly 20 via the polishing pad W by adjusting the air pressure in the first chamber 101; on the other hand, the amount of force directly applied to the polishing pad M by the second force application member 30 can be changed by adjusting the air pressure in the second chamber 102. In other words, since the second force application member 30 of the present application surrounds the first force application member 20 and can adjust the amount of the force applied directly to the polishing pad M by the air pressure in the second chamber 102, when the polishing pad W is carried by the first force application member 20 to press the polishing pad M, the second force application member 30 can directly apply the pressure to the portion of the polishing pad M around the edge of the polishing pad W, so as to prevent the polishing pad M from being deformed at the edge of the polishing pad W; further, when the polishing carrier 1 rotates relative to the polishing pad M, the polishing carrier 1 can avoid the problem of edge overspray or underspray of the polishing sheet W, thereby improving the flatness of the polishing sheet W.
It will be appreciated that the volumes of the first chamber 101 and the second chamber 102 of the base assembly 10 of the present application may vary slightly to ensure that the first chamber 101 and the second chamber 102 are capable of varying the amount of force applied to the first force application assembly 20 and the second force application assembly 30, and thus the amount of pressure applied to the polishing wafer W and the polishing pad M, by varying the internal air pressure.
More specifically, as shown in fig. 2 and 3, the base assembly 10 may include a first base 11, a second base 12, a first conductive pipe 13, and a second conductive pipe 14. The first base 11, the second base 12 and the first force application member 20 are stacked in this order with a spacing. The first conductive pipe 13 is telescopically disposed between the first base 11 and the second base 12 to form the second cavity 102 within the first conductive pipe 13. The second conductive pipe 14 is telescopically disposed between the second base 12 and the first force application member 20 to form the first cavity 101 within the second conductive pipe 14. The second force application assembly 30 is fixedly disposed on the second base 12. In other words, the second cavity 102 of the present application may be formed by the first base 11, the second base 12 and the first conductive pipe 13 in a co-operation manner; the first chamber 101 of the present application may be formed by the second base 12, the first force application member 20, and the second conductive pipe 14.
Thus, when the first base 11 of the base member 10 of the polishing carrier 1 rotates relative to the polishing pad M, the first conductive pipe 13 transmits the rotational force of the first base 11 to the second base 12 and the second force applying member 30, and further transmits the rotational force of the second base 12 to the first force applying member 20 through the second conductive pipe 14, so that the second force applying member 30 and the polishing sheet W carried by the first force applying member 20 can synchronously rotate relative to the polishing pad M. Meanwhile, since the first and second conductive pipes 13 and 14 are telescopically arranged to ensure that the volumes of the second and first chambers 102 and 101 are variable, the first and second conductive pipes 13 and 14 can be absorbed by telescoping when the polishing wafer W generates up-down amplitude during polishing, thereby ensuring the stability of polishing pressure.
It is noted that, when polishing the polishing wafer W, the polishing wafer W can be rotated relative to the polishing pad M by rotating the polishing carrier 1; instead of rotating the polishing carrier 1, the polishing sheet W may be rotated with respect to the polishing pad M by rotating the polishing pad M to perform polishing; alternatively, the polishing carrier 1 and the polishing pad M may also be rotated simultaneously in opposite directions so that the rotation directions of the polishing sheet W and the polishing pad M are reversed for efficient polishing.
Preferably, the first base 11 of the base assembly 10 of the polishing carrier 1 of the present application is adapted to be coupled with a rotation shaft so as to provide rotation power and lifting power through the rotation shaft. Thus, the force is transmitted to the polishing sheet W through the first susceptor 11, the first conductive pipe 13, the second susceptor 12, the second conductive pipe 14, and the first force application member 20 in this order; at the same time, the polishing pad M is transferred through the first susceptor 11, the first conductive pipe 13, the second susceptor 12 and the second force application member 30.
Optionally, as shown in fig. 2, the base assembly 10 further includes a connector 103 in communication with the first chamber 101 and a port 104 in communication with the second chamber 102, such that a desired air pressure is injected into the first chamber 101 through the connector 103 and a desired air pressure is injected into the second chamber 102 through the port 104. It will be appreciated that when different air pressures are injected into the first chamber 101, the first force application assembly 20 will create different pressures on the wafer W; when different air pressures are injected into the second chamber 102, the second force application assembly 30 will generate different pressures on the polishing pad M, so as to control the polishing pressure and further polish the polishing wafer W.
Optionally, the interface 104 is disposed at a central position of the first base 11; the joint 103 is penetratingly disposed on the second base 12 through the interface 104, so that a corresponding channel is formed in a rotating shaft fixedly connected to the first base 11 to inject air pressure into the first cavity 101 and the second cavity 102, respectively.
Optionally, both the first and second conductive pipes 13, 14 are flexible in order to conduct the pressure completely without damage or loss. Thus, after the air pressure is injected into the first chamber 101, the second conductive pipe 14 fully transmits the pressure to the polishing wafer W due to the elasticity, thereby pressing the polishing wafer W against the polishing pad M; at this time, if the air pressure in the first chamber 101 is increased, the acting force of the first force application component 20 on the polishing wafer W is proportionally increased, so that the first force application component 20 presses the polishing wafer W to be polished against the polishing pad M with greater force.
Similarly, after the air pressure is injected into the second chamber 102, a larger air pressure is formed in the second chamber 102, and the first conductive pipe 13 is fully conductive to the second base 12 due to the elasticity; at this time, a part of the air pressure applied to the second base 12 is used to counteract the reaction force applied to the polishing wafer W, and the remaining part is transferred to the second force application assembly 30 to directly apply the pressure to the polishing pad M, so as to reduce or solve the problem of over-polishing or under-polishing of the edge of the polishing wafer W, which is helpful for improving the polishing quality of the polishing wafer W.
Preferably, as shown in fig. 2 and 3, the first and second conductive pipes 13 and 14 are respectively implemented as first and second telescopic pipes 130 and 140, respectively, such that the first and second conductive pipes 13 and 14 have telescopic performance in an angular direction in addition to the telescopic performance in an axial direction, that is, portions of different radians (i.e., angular directions) of the first and second telescopic pipes 130 and 140 can be simultaneously telescopic in an axial direction in addition to being simultaneously telescopic in an axial direction, so that fluctuation in an angular direction can be absorbed through the first and second conductive pipes 13 and 14. It can be understood that during polishing, carrier inclination often occurs due to vibration, and further angle fluctuation occurs during rotation, so that edge overspray or underspray occurs; the polishing carrier 1 of the present application has a certain rigidity in the radial direction due to the axial expansion and contraction of the first and second bellows 130 and 140, so that on one hand, the polishing carrier can absorb shock to ensure uniform pressurization even if the polishing platen is inclined, and on the other hand, the polishing carrier can absorb angular fluctuation to stably conduct rotational force, thereby ensuring smooth rotation of the polishing blade W relative to the polishing pad M for high-quality polishing.
It should be noted that the first conductive pipe 13 and the second conductive pipe 14 of the present application may be, but not limited to, a telescopic pipe such as an expansion joint, an expansion joint or a compensator (e.g. a bellows compensator, a sleeve compensator, a rotation compensator, a square natural compensator or a metal bellows, etc.), and the present application will not be described herein.
Illustratively, as shown in fig. 2 and 3, one end of the first telescopic tube 130 is fixed to the first base 11, and the other end of the first telescopic tube 130 is fixed to the second base 12, so as to realize the variable volume of the second chamber 102 and absorb the fluctuation in the angular direction by the expansion and contraction of the first telescopic tube 130 itself; one end of the second telescopic tube 140 is fixed to the second base 12, and the other end of the second telescopic tube 140 is fixed to the first force application assembly 20, so as to realize the variable volume of the first cavity 101 and absorb the fluctuation in the angular direction through the expansion and contraction of the second telescopic tube 140. It will be appreciated that in other examples of the present application, the first conductive pipe 13 and the second conductive pipe 14 may be implemented as rigid pipes, but are telescopically disposed on the first base 11, the second base 12 and the first force application assembly 20 through telescopic connection mechanisms, so that the required telescopic performance can still be achieved, which is not described herein.
Optionally, as shown in fig. 2 and 3, the base assembly 10 of the polishing carrier 1 may further comprise a pair of first seal rings 15 and a pair of second seal rings 16. The first sealing ring 15 is disposed between the two ends of the first base 11, the second base 12 and the first telescopic tube 130, respectively, so as to form the second cavity 102 relatively sealed by the first base 11, the second base 12, the first telescopic tube 130 and the first sealing ring 15, so as to prevent leakage of air pressure from the fixed connection parts of the two ends of the first telescopic tube 130. The second sealing ring 16 is disposed between the second base 12 and two ends of the first force application member 20 and the second telescopic tube 140, respectively, so as to form the first cavity 101 relatively sealed by the second base 12, the first force application member 20, the second telescopic tube 140 and the second sealing ring 16, so as to prevent leakage of air pressure from the fixed connection parts of two ends of the second telescopic tube 140. It will be appreciated that the connector 103 of the base assembly 10 of the present application is in communication with the first chamber 101 for injecting air pressure into the first chamber 101; the interface 104 of the base assembly 10 is in communication with the second chamber 102 for injecting air pressure into the second chamber 102. It will be appreciated that the first chamber 101 and the second chamber 102 of the present application have a certain sealing property to maintain the pressure in the chambers stable, so as to smoothly press the polishing wafer W and the polishing pad M, thereby improving the polishing quality.
Notably, in order to avoid damaging the first and second conductive pipes 13 and 14 due to excessive amplitude generated during polishing; accordingly, as shown in fig. 2 and 3, the base assembly 10 of the polishing carrier 1 of the present application may further include a first stopper 17 disposed between the first base 11 and the second base 12, respectively, and a second stopper 18 disposed between the second base 12 and the first force application assembly 20, respectively, so as to limit the volume adjustment range of the second chamber 102 by the first stopper 17 and limit the volume adjustment range of the first chamber 101 by the second stopper 18, thereby preventing the first conductive pipe 13 and the second conductive pipe 14 from being damaged by irreversible deformation.
Alternatively, as shown in fig. 2 and 3, the first limiting mechanism 17 of the present application may include a first limiting block 171 fixed to the first base 11 and a first limiting groove 172 correspondingly disposed on the second base 12, where the first limiting block 171 and the first limiting groove 172 cooperate to limit the expansion range of the first conductive pipe 13, that is, limit the volume adjustment range of the second cavity 102. Thus, when the second chamber 102 of the polishing carrier 1 is in an unpressurized state, the first stopper 171 hooks the upper edge of the first stopper groove 172 to form a stopper support; when the second chamber 102 of the polishing carrier 1 is pressurized and is impacted with a large amplitude, the first stopper 171 abuts against the lower edge of the first stopper groove 172 to form a stopper support. It is to be understood that the first limiting groove 172 of the present application may be formed by directly grooving the second base 12, or may be formed by adding a pressing block to the second base 12, so long as the first limiting groove 172 matched with the first limiting block 171 can be formed, which is not described in detail herein. Of course, in other examples of the present application, the positions of the first limiting block 171 and the first limiting groove 172 may be interchanged, so long as the volume adjustment range of the second cavity 102 can be limited, which will not be described in detail herein.
Similarly, as shown in fig. 2 and 3, the second limiting mechanism 18 of the present application may include a second limiting block 181 fixed to the second base 12 and a second limiting groove 182 disposed on the first force application component 20, where the second limiting block 181 and the second limiting groove 182 cooperate to limit the expansion range of the second conductive pipe 14, that is, limit the volume adjustment range of the first cavity 101. Thus, when the first chamber 101 of the polishing carrier 1 is in an unpressurized state, the second stopper 181 hooks the upper edge of the second stopper groove 182 to form a stopper support; when the first chamber 101 of the polishing carrier 1 is pressurized and is impacted with a large amplitude, the second limiting block 181 abuts against the lower edge of the second limiting groove 182 to form a limiting support.
According to the above-described embodiment of the present application, as shown in fig. 2, 3 and 4, the first force application member 20 of the polishing carrier 1 may include a conductive plate 21 connected to the second conductive pipe 14 and a first force application plate 22 fixedly connected to the conductive plate 21.
Optionally, the first force application assembly 20 may further include an adsorption pad 23 fixed to the first force application plate 22, where the adsorption pad 23 is used to adsorb the polishing wafer W to realize the bearing of the polishing wafer W.
Alternatively, as shown in fig. 2 and 3, one end of the second conductive pipe 14 is fixedly connected to the second base 12, and the other end of the second conductive pipe 14 is fixedly connected to the conductive plate 21, so that the first chamber 101 is formed by the conductive plate 21, the second base 12 and the second conductive pipe 14 together, so that the air pressure in the first chamber 101 and the rotational force from the second conductive pipe 14 are transmitted to the first pressurizing plate 22 through the conductive plate 21, and the adsorbed wafer W is pressurized and driven to rotate through the first pressurizing plate 22 and the adsorption pad 23.
It will be appreciated that the suction pad 23 of the present application can suction the polishing sheet W by means of, but not limited to, water tension, and its principle is that: the inside of the adsorption pad 23 has a porous water-wet environment to form a plurality of vacuum areas with the wafer W under the combined action of pressure and water tension, thereby achieving reliable adsorption.
It should be noted that the second limiting groove 182 of the present application may be formed by directly grooving the conductive plate 21, or may be formed by pressing a block on the conductive plate 21, so long as the second limiting groove 182 matched with the second limiting block 181 can be formed, which is not described in detail herein. Of course, in other examples of the present application, the positions of the second limiting block 181 and the second limiting groove 182 may be interchanged, so long as the volume adjustment range of the first cavity 101 can be limited, which will not be described in detail herein.
Preferably, as shown in fig. 2, 3 and 4, the first force application assembly 20 may be provided with a stress control chamber 24 between the conductive plate 21 and the first force application plate 22 to control the uniformity of stress distribution on the first force application plate 22 through the stress control chamber 24 so as to uniformly conduct pressure to the polishing sheet W. It is understood that the present application can control the uniformity of the stress distribution on the first pressure applying plate 22 by the size of the cavity of the stress control cavity 24, which is not described herein.
According to the above embodiment of the present application, as shown in fig. 2 and 3, the second force application member 30 of the polishing carrier 1 may include a support arm 31 fixedly connected to the second base 12 and a second pressing plate 32 fixedly connected to the support arm 31, and the second pressing plate 32 has an annular structure so as to surround the first pressing plate 22 of the first force application member 20. Thus, when the first base 11 receives the external force to drive rotation, the first conductive pipe 13 drives the second base 12, and further drives the supporting arm 31 to drive the second pressing plate 32 to rotate. Meanwhile, when the second chamber 102 is filled with air pressure, the second base 12 transmits a part of air pressure to the supporting arm 31, so that the second pressurizing plate 32 directly pressurizes the polishing pad M around the polishing wafer W, thereby reducing or eliminating deformation of the polishing pad M due to pressurization of the polishing wafer W.
Alternatively, the support arm 31 of the second force application assembly 30 may also have an annular configuration to form a retaining ring to facilitate more uniform transfer of pressure to the second force application plate 32.
It should be noted that, in order to prevent the collision between the second force application member 30 and the first force application member 20 caused by the fluctuation generated during polishing, the base member 10 of the polishing carrier 1 may further include a third sealing ring 19, and the third sealing ring 19 is correspondingly disposed between the first force application member 20 and the second force application member 30, so as to reduce the collision between the first force application member 20 and the second force application member 30 by the elasticity of the third sealing ring 19.
Alternatively, as shown in fig. 2, 3 and 5, the third sealing ring 19 is sleeved on the outer periphery of the conductive plate 21 of the first force application assembly 20 to seal the gap between the conductive plate 21 and the supporting arm 31, so that not only can the buffer function be achieved, but also the chemical liquid can be prevented from entering and contacting the second conductive pipe 14, so that the second conductive pipe 14 is prevented from being corroded by the chemical liquid to rust.
It will be appreciated that a chemical solution such as an alkaline solution or an acidic solution is generally used in the polishing process to directly corrode the metal surface, and rust or the like is generated once the metal surface is corroded, and if rust falls down, polishing defects are generated, so that serious problems such as surface scratches, metal contamination or LPD (Light Point Defect; light point defect) of the polished wafer W are easily generated. In addition, if the second conductive pipe 14 is corroded by the chemical solution, the expansion and contraction performance of the second conductive pipe is also affected, so that the third sealing ring 19 of the present application can well prevent the chemical solution from contacting the second conductive pipe 14 through the gap between the conductive plate 21 and the supporting arm 31, thereby helping to protect the second conductive pipe 14.
Further, as shown in fig. 3 and 4, the second pressing plate 32 of the second force application assembly 30 may include a pressing ring 321 fixedly coupled to the supporting arm 31 and a flange 322 extending inward from an inner circumferential surface of the pressing ring 321 to reduce a gap between the second pressing plate 32 and the first pressing plate 22 by the flange 322, and to reduce or prevent chemical liquid from entering through the gap between the second pressing plate 32 and the first pressing plate 22.
Alternatively, as shown in fig. 2 and 4, the flange 322 integrally extends inward from the pressing ring 321, and the bottom surface of the flange 322 is flush with the bottom surface of the pressing ring 321 to form the pressing surface 320 of the second pressing plate 32, so that the area of the pressing surface 320 of the second pressing plate 32 is increased and is closer to the polishing wafer W carried on the first force application assembly 20, so as to further improve the polishing quality of the polishing wafer W.
It should be noted that, as shown in fig. 1 and 2, the polishing carrier 1 may further include a protecting cover 40, where the protecting cover 40 is covered on the outer portion of the base assembly 10 to protect the first base 11, the first conductive pipe 13, and the second base 12 from being corroded by the chemical liquid.
In addition, the supporting arm 31 of the second force application assembly 30 may be made of a material resistant to chemical corrosion, or the surface of the supporting arm 31 may be provided with a coating resistant to chemical corrosion to prevent the supporting arm 31 from being corroded by chemical liquid. The second pressing plate 32 of the second force application assembly 30 needs to have not only good wear resistance, but also good corrosion resistance; for example, the second pressing plate 32 may be made of a material that is resistant to chemical corrosion and abrasion, or the supporting arm 31 may be made of a material that is resistant to abrasion, and the surface thereof is provided with a coating that is resistant to chemical corrosion.
Alternatively, the first pressure applying plate 22 of the first force applying assembly 20 may be fabricated from a highly rigid material that is resistant to chemical attack.
In summary, the air pressure in the first chamber 101 of the polishing carrier 1 of the present application will act on the first force application member 20; the air pressure within the second chamber 102 will act in part on the second force application assembly 30 and in part on the first force application assembly 20. Meanwhile, the first force application member 20 directly applies pressure to the polishing pad W to indirectly apply pressure to the polishing pad M via the polishing pad W; the second force application member 30 directly applies pressure to the polishing pad M to apply pressure to the polishing pad M in the area around the polishing sheet W. Thus, on one hand, the over-polishing of the edge of the polishing sheet W caused by the stress concentration of the polishing pad area around the polishing sheet W due to the inclined deformation of the polishing pad area on the polishing sheet W is prevented; on the other hand, through the absorption of the first conductive pipe 13 and the second conductive pipe 14 to the vibration, the first force application component 20 and the second force application component 30 relatively float due to inclination or angle fluctuation in the polishing process, so as to avoid the problem that the edge of the polished wafer W is excessively polished or less polished, thereby improving the flatness of the polished wafer W.
The technical features of the above embodiment may be arbitrarily combined, and all possible combinations of the technical features in the above embodiment are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.
Claims (9)
1. A polishing carrier for carrying a polishing pad for polishing on a polishing pad, the polishing carrier comprising:
a base assembly including a first chamber and a second chamber for being adjustably pressurized to provide a variable amount of force, respectively;
a first force application assembly disposed on the base assembly and configured to connect to the polishing pad to apply a force to the polishing pad under the action of the first cavity; and
a second force application assembly disposed on the base assembly and relatively movably surrounding the first force application assembly, the second force application assembly being configured to apply a force to a region of the polishing pad surrounding the polishing pad under the influence of the second chamber;
the base assembly comprises a first base, a second base, a first conducting pipe and a second conducting pipe, wherein the first base, the second base and the first force application assembly are sequentially stacked at intervals, and the first conducting pipe is telescopically arranged between the first base and the second base so as to form the second cavity in the first conducting pipe; the second conductive tube is telescopically disposed between the second base and the first force application assembly to form the first cavity within the second conductive tube; the second force application component is fixedly arranged on the second base.
2. The polishing carrier of claim 1, wherein the first and second conductive pipes are first and second telescoping pipes, respectively, one end of the first telescoping pipe being fixed to the first base, and the other end of the first telescoping pipe being fixed to the second base; one end of the second telescopic tube is fixed on the second base, and the other end of the second telescopic tube is fixed on the first force application assembly.
3. The polishing carrier of claim 2, wherein the base assembly further comprises a pair of first sealing rings and a pair of second sealing rings, the first sealing rings being disposed between the first and second bases and the ends of the first telescoping tube, respectively; the second sealing rings are respectively and correspondingly arranged between the second base, the first force application assembly and two ends of the second telescopic pipe.
4. The polishing carrier of claim 1, wherein the base assembly further comprises a first stop mechanism and a second stop mechanism, the first stop mechanism disposed between the first base and the second base for limiting a volume adjustment range of the second chamber; the second limiting mechanism is arranged between the second base and the first force application component and used for limiting the volume adjustment range of the first cavity.
5. The polishing carrier of claim 4, wherein the first stop mechanism comprises a first stop block fixedly arranged on the first base and a first stop slot correspondingly arranged on the second base, and the first stop block and the first stop slot are mutually matched to limit the expansion range of the first conductive pipe; the second limiting mechanism comprises a second limiting block fixedly arranged on the second base and a second limiting groove correspondingly arranged on the first force application component, and the second limiting block is matched with the second limiting groove so as to limit the expansion range of the second conductive pipe.
6. The polishing carrier of any one of claims 1-5, wherein the first force application assembly comprises a conductive plate coupled to the second conductive tube and a first force application plate affixed to the conductive plate; the first force application assembly is further provided with a stress control cavity between the conductive plate and the first pressure application plate for controlling stress distribution uniformity on the first pressure application plate.
7. The polishing carrier of claim 6, wherein the second force application assembly comprises a support arm fixedly connected to the second base and a second pressure plate fixedly connected to the support arm, the second pressure plate having an annular structure to surround the first pressure plate of the first force application assembly; the second pressing plate includes a pressing ring fixedly coupled to the support arm and a flange extending inward from an inner circumferential surface of the pressing ring to reduce a gap between the second pressing plate and the first pressing plate by the flange.
8. The polishing carrier of claim 7, wherein the base assembly further comprises a third seal ring disposed between the first and second force application assemblies, respectively, to seal a gap between the conductive plate and the support arm.
9. The polishing carrier of any one of claims 1-5, further comprising a protective cover, the protective cover being covered on an exterior of the base assembly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210581245.2A CN115091359B (en) | 2022-05-26 | 2022-05-26 | polishing carrier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210581245.2A CN115091359B (en) | 2022-05-26 | 2022-05-26 | polishing carrier |
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| CN115091359A CN115091359A (en) | 2022-09-23 |
| CN115091359B true CN115091359B (en) | 2023-09-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210581245.2A Active CN115091359B (en) | 2022-05-26 | 2022-05-26 | polishing carrier |
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| CN (1) | CN115091359B (en) |
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|---|---|
| CN115091359A (en) | 2022-09-23 |
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