CN1748293A - Substrate holding apparatus and polishing apparatus - Google Patents
Substrate holding apparatus and polishing apparatus Download PDFInfo
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- CN1748293A CN1748293A CN 200480003897 CN200480003897A CN1748293A CN 1748293 A CN1748293 A CN 1748293A CN 200480003897 CN200480003897 CN 200480003897 CN 200480003897 A CN200480003897 A CN 200480003897A CN 1748293 A CN1748293 A CN 1748293A
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- holding apparatus
- contact portion
- substrate holding
- substrate
- semiconductor wafer
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Abstract
The present invention relates to a substrate holding apparatus for holding a substrate (W) such as a semiconductor wafer in a polishing apparatus for polishing the substrate to a flat finish. A substrate holding apparatus comprises a vertically movable member (6), and an elastic member (7) for defining a chamber (22). The elastic member (7) comprises a contact portion (8) which is brought into contact with the substrate (W), and a circumferential wall (9) extending upwardly from the contact portion (8) and connected to the vertically movable member (6). The circumferential wall (9) has a stretchable and contractible portion (40) which is stretchable and contractible vertically.
Description
Technical field
The present invention relates to a kind ofly be used to keep polished substrate and this substrate is pressed against substrate holding apparatus on the polished surface, particularly relate to a kind of substrate holding apparatus that is used for keeping substrate, for example semiconductor wafer at the burnishing device that substrate is polished to smooth light face.The invention still further relates to a kind of burnishing device with this substrate holding apparatus.
Background technology
In recent years, it is more integrated that semiconductor device becomes, and the structure of semiconductor element also becomes complicated more.In addition, the number of plies that is used for the multilayer interconnection of logic system also is enhanced.Therefore, the scrambling of semiconductor device surface increases, so that the step height of semiconductor device surface is tending towards bigger.This is because in the manufacture process of semiconductor device, form thin film on semiconductor device, then semiconductor device being carried out micromachining handles, for example form pattern or hole, these processing repeat repeatedly, to form subsequent thin film on semiconductor device.
When the scrambling of semiconductor device surface increased, following problem can appear.When on semiconductor device, forming film, less relatively at the thickness of the formed film of part with step.Because causing, the disconnection of interconnecting parts opens circuit or because insufficient short circuit that causes of insulating between the interconnection layer.Therefore, the product that can not obtain, output also can reduce.In addition, even the semiconductor device virgin work is normal, the reliability of semiconductor device also can reduce after long-term the use.When in lithography process, exposing, if radiating surface has scrambling, just then the lens combination in the exposure system can not be assembled in the part.Therefore, if the scrambling of semiconductor device surface increases, then can produce the problem that is difficult on semiconductor device, form fine pattern.
Therefore, in the manufacture process of semiconductor device, the planarized semiconductor device surface becomes more and more important.In the planarization technique most important a kind of be CMP (chemico-mechanical polishing).In chemico-mechanical polishing, use a burnishing device, will wherein contain abrasive grain, as silica (SiO
2) polishing fluid supply under the situation on polished surface, for example polishing pad, make substrate, for example semiconductor wafer and polished surface sliding contact, thus substrate is polished.
This class burnishing device comprises the polishing block with polished surface and is used for keeping the substrate holding apparatus that is known as apical ring or carrier head of semiconductor wafer that wherein said polished surface is made of polishing pad.When utilizing this burnishing device that semiconductor wafer is polished, semiconductor wafer is kept with predetermined pressure by substrate holding apparatus and is pressed against on the polishing block.At this moment, polishing block and substrate holding apparatus move relative to each other, so that semiconductor wafer and polished surface produce sliding contact, thereby semiconductor wafer surface are polished to smooth mirror finish level.
In this burnishing device, if the relative thrust between the polished surface of polished semiconductor wafer and polishing pad is inhomogeneous on the whole surface of semiconductor wafer, then making semiconductor wafer fully to polish according to the difference of the thrust on this part that is applied to semiconductor wafer on some part or may excessive polishing.Therefore, people attempt to use the surface that forms substrate holding apparatus by elastomeric material, as the elastic membrane of rubber manufacturing, to keep semiconductor wafer, and to the back side of elastic membrane apply fluid pressure, as air pressure evenly distribute on the whole surface of semiconductor wafer so that be applied to pressure on the semiconductor wafer.
In addition, the elasticity of polishing pad makes the pressure on the peripheral part that is applied to polished semiconductor wafer become inhomogeneous, has only the peripheral part possibility excessive polishing of semiconductor wafer thus, and this is known as " corner cavetto ".For avoiding this corner cavetto, adopted a kind of substrate holding apparatus, wherein semiconductor wafer is kept by lead ring or snap ring in its periphery office, and annular section corresponding with the peripheral part of semiconductor wafer on the polished surface is pushed down by lead ring or snap ring.
Below with reference to Figure 29 A and 29B one conventional substrate holding device is described.Figure 29 A and 29B show the partial cross section view of a conventional substrate holding device.
Shown in Figure 29 A, this substrate holding apparatus has apical ring body 2, be arranged in the chuck 6 of apical ring body 2 and attached to the elastic membrane on the chuck 6 80.Elastic membrane 80 is positioned on the excircle part of chuck 6, and contacts with the circumferential edges of semiconductor wafer W.Circumferential clasp 3 is maintained at the lower end of apical ring body 2, and pushes polished surface near the circumferential edges of semiconductor wafer W.
Chuck 6 is installed on the apical ring body 2 by elastic pressuring plate 13.Chuck 6 and elastic membrane 80 under the effect of fluid pressure within the specific limits with respect to apical ring body 2 and snap ring 3 vertical moving.Substrate holding apparatus with this structure is called as so-called floating substrate holding apparatus.Define a pressure chamber 130 by the lower surface of elastic membrane 80, chuck 6 and the upper surface of semiconductor wafer W.Input one pressure fluid in pressure chamber 130 also is pressed against semiconductor wafer W on the polished surface simultaneously thereby lift chuck 6.Under this state, polishing fluid is provided on polished surface, and rotates apical ring (substrate holding apparatus) and polished surface independently of one another, the lower surface with semiconductor wafer W is polished to smooth light face thus.
After polishing process finished, semiconductor wafer W was subjected to vacuum attraction and is kept by apical ring.Apical ring is keeping semiconductor wafer W to move to a delivering position, ejects a liquid (for example mixture of pressure fluid or nitrogen and pure water) then from the bottom of chuck 6, so that discharge semiconductor wafer W.
Yet, in above-mentioned traditional floating substrate holding apparatus, when chuck 6 moves up when compressing semiconductor wafer W, the elastic membrane 80 that keeps contacting with the outer circumferential edges of semiconductor wafer W is mentioned by chuck 6, causes the outer circumferential edges of elastic membrane 80 and semiconductor wafer W to disengage thus.Therefore, the thrust that is applied on the semiconductor wafer W is changed partly at the outer circumferential edges place of semiconductor wafer W.So, reduce at the outer circumferential edges place of semiconductor wafer W polishing rate, and raise at the regional polishing rate of the inner radial of the outer circumferential edges that is positioned at semiconductor wafer W.
Along with the hardness raising of elastic membrane, this problem can be more serious.Therefore, people attempt to use the elastic membrane of soft, so that the contact area between elastic membrane and the semiconductor wafer remains unchanged.But in the floating substrate holding apparatus, snap ring 3 keeps sliding contact with polished surface in the time of the semiconductor wafer W polishing.Therefore, snap ring 3 will certainly wear and tear in time, thereby causes the distance between semiconductor wafer W and the chuck 6 to reduce (referring to Figure 29 B).So the pressure that is applied on the outer circumferential edges of semiconductor wafer W changes, change at the outer circumferential edges place of semiconductor wafer W polishing rate thus, thereby cause the change of polishing profile.In addition, because this defective must just replace the snap ring of wearing and tearing in the starting stage, so the useful life of snap ring is very short.
Except that the problems referred to above, also there is another problem in traditional substrate holding apparatus: when polishing will begin, pressure fluid was transfused to pressure chamber, and elastic membrane may not keep fully closely contacting each other with semiconductor wafer.Therefore, pressure fluid is easy to seepage the gap between elastic membrane and semiconductor wafer.
In addition, discharging the step of semiconductor wafer from apical ring, following problem can take place: if be formed with the film of nitride etc. on the back side of semiconductor wafer (upper surface), then elastic membrane and semiconductor die sector-meeting are adhering to each other.Therefore, when discharging semiconductor wafer, elastic membrane may not disengage with semiconductor wafer.In this state, if the pressure fluid continuous injection on semiconductor wafer, elastic membrane is keeping and is being stretched when semiconductor wafer contacts.Therefore, semiconductor wafer is owing to fluid pressure is out of shape, or breaks in the worst case.
In addition, also can produce another problem in the conventional substrate holding device: the pressure chamber that is made of elastic membrane is owing to fluid pressure is out of shape.Therefore, when pressure fluid input pressure chamber, elastic membrane and semiconductor wafer part disengage.Like this, be applied to local reduction of thrust on the semiconductor wafer, can not on the whole polished surface of semiconductor wafer, obtain uniform polishing rate thus.
Along with the hardness raising of elastic membrane, this problem can be more serious.Therefore, as mentioned above, people attempt to use the elastic membrane of soft, so that the contact area between elastic membrane and the semiconductor wafer remains unchanged.But because the mechanical strength of soft elastic membrane is low, elastic membrane will certainly produce the crack, thereby needs frequent the replacing.
Summary of the invention
The present invention proposes in view of above-mentioned defective.According to the present invention, provide a kind of and be used for by supplying with pressure fluid adds substrate holding apparatus from thrust to undercoat to the space that limits by elastic membrane.This substrate holding apparatus is configured to stably handle substrate in all processes that comprise substrate polishing process and substrate dispose procedure.Specifically, first purpose of the present invention is the burnishing device that a kind of substrate holding apparatus is provided and has this substrate holding apparatus, this substrate holding apparatus can apply uniform thrust to the whole surface of substrate, so that obtain polishing profile uniformly on the whole surface of substrate.Second purpose of the present invention be to provide a kind of can the rapid release substrate substrate holding apparatus and the burnishing device with this substrate holding apparatus.The 3rd purpose of the present invention is to provide a kind of can obtain the substrate holding apparatus of uniform polishing rate and the burnishing device with this substrate holding apparatus on the whole polished surface of substrate.
For achieving the above object, according to an aspect of the present invention, provide a kind of and be used for polished substrate kept and be pressed against substrate holding apparatus on the polished surface, this substrate holding apparatus comprises: but vertical moving parts; But one links to each other to be used to limit the elastomeric element of a chamber with described vertical moving parts; But described elastomeric element comprises the contact portion and the perisporium that extends upward and link to each other with described vertical moving parts from described contact portion that come in contact with described substrate, but described perisporium has the scalable part of a vertical stretching and contraction.
Of the present invention one preferred aspect, described perisporium comprises a periphery wall and an internal perisporium that is positioned at the radially inner side of described periphery wall; In described periphery wall and the internal perisporium at least one has this scalable part; And the position of this contact portion between described periphery wall and described internal perisporium is separated.
Because the present invention has said structure, but when vertical moving parts (chuck) when moving up, because scalable part is by stretched vertically, so the contact portion that keeps in touch with substrate can hold its shape.Therefore, the contact area between elastomeric element and the substrate can remain unchanged, and can obtain uniform thrust thus on the whole surface of substrate.
Thereby even but snap ring be worn and cause the distance between vertical moving parts and the substrate to change, scalable part is also collapsible, with the variation of following distance.Therefore, the contact portion that keeps in touch with substrate can hold its shape.Like this, can compress substrate with uniform pressure on the whole surface from substrate center to its circumferential edges, the polishing rate that can obtain homogeneous thus on the whole surface of substrate promptly polishes profile.In addition, owing to scalable part is shunk according to the wearing and tearing of snap ring, so the snap ring of wearing and tearing still can use and needn't change.
Of the present invention one preferred aspect, perisporium has a folded part, to form described scalable part.
Of the present invention one preferred aspect, described folded part has basic arc-shaped cross-section.
By this structure, scalable part can stretch downwards smoothly.
Of the present invention one preferred aspect, scalable part is made by the material softer than contact portion.
Of the present invention one preferred aspect, a predetermined portions of perisporium is thinner than contact portion, to constitute scalable part.
Of the present invention one preferred aspect, perisporium has a part of being made by the material harder than contact portion and being positioned under the scalable part.
Of the present invention one preferred aspect, perisporium has one by thicker than contact portion and be positioned at part under the scalable part.
Of the present invention one preferred aspect, be embedded in a hard component harder at perisporium, and this hard component is positioned under the scalable part than elastomeric element.
Of the present invention one preferred aspect, on perisporium, fix a hard component harder, and this hard component is positioned under the scalable part than elastomeric element.
Of the present invention one preferred aspect, perisporium has the part that a surface scribbles the material harder than elastomeric element, and this part is positioned under the scalable part.
Because the present invention has said structure, the intensity of perisporium can be enhanced, and therefore can prevent that when substrate polishes elastomeric element is twisted.
According to a further aspect in the invention, provide a kind of and be used for polished substrate kept and be pressed against substrate holding apparatus on the polished surface, this substrate holding apparatus comprises: but vertical moving parts; But one links to each other to be used to limit the elastomeric element of a chamber with described vertical moving parts; But described elastomeric element comprises a contact portion that contacts with described substrate and a perisporium that extends upward and link to each other with described vertical moving parts from described contact portion, wherein said perisporium comprises that a periphery wall and is positioned at the internal perisporium of the radially inner side of described periphery wall, and described contact portion is separated in the position between described periphery wall and described internal perisporium.
Of the present invention one preferred aspect, a compacting part contacts with the upper surface of contact portion, thereby contact portion is pressed on the substrate.
Because the present invention has said structure, compacting part can make the lower surface of contact portion closely contact with the upper surface of substrate.Therefore, can prevent that pressure fluid is from the gap seepage between contact portion and the substrate.
Of the present invention one preferred aspect, compacting part has a plurality of grooves that are formed on its lower surface and radially extend.
Of the present invention one preferred aspect, compacting part has one and is formed on its lower surface to be used for supplying with to the upper surface of contact portion the fluid supply port of fluid.
Because the present invention has said structure, pressure fluid can be supplied to the upper surface of contact portion fast by described groove or fluid supply port.Therefore, when the compacted parts of contact portion were pressed against on the substrate, pressure fluid can be pressed against contact portion on the substrate.
Of the present invention one preferred aspect, contact portion has on the surface formed thereon and along thick portion that the circumferencial direction of contact portion extends.
Of the present invention one preferred aspect, described thick portion has and is substantially triangular in shape or the cross section of arc.
Of the present invention one preferred aspect, in contact portion, embed a reinforcing member.
Because the present invention has said structure, because the intensity of contact portion is enhanced, so can prevent that when compacting part is pressed against contact portion on the substrate contact portion along the circumferential direction is twisted.Therefore, contact portion can keep tight each other with substrate and contact, thereby prevents the pressure fluid seepage.
Of the present invention one preferred aspect, contact portion has lip-deep a plurality of depressions formed thereon and projection.
Because the present invention has said structure, but contact portion is weakened to the adhesive force of vertical moving parts.Therefore, but when the vertical moving parts move up, but the contact portion that can prevent flexible member is mentioned by the vertical moving parts.
According to a further aspect in the invention, provide a kind of burnishing device, it comprises: substrate holding apparatus; And polishing block with polished surface.
According to a further aspect in the invention, provide a kind of method of polished substrate, comprising: keep substrate by above-mentioned substrate holding apparatus; Substrate is placed on the polished surface of polishing block; But move down the vertical moving parts, so that contact portion is pressed against on the substrate; When being pressed in contact portion on the substrate, in chamber, provide pressure fluid; And make substrate and polished surface generation sliding contact, with polished substrate.
According to a further aspect in the invention, provide a kind of and be used for polished substrate kept and be pressed against substrate holding apparatus on the polished surface, this substrate holding apparatus comprises: but vertical moving parts; And elastomeric element that is used to limit a chamber; Described elastomeric element has a contact portion that contacts with described substrate, and this contact portion has one and is used to promote that contact portion promotes part from the disengaging that substrate breaks away from.
Of the present invention one preferred aspect, break away to promote part to comprise an otch on the circumferential edges that is formed at contact portion.
Of the present invention one preferred aspect, contact portion has one by the zone that the low material of adhesive force of the adhesive force of substrate comparison elastomeric element is made.
Of the present invention one preferred aspect, a surface of contact portion has a plurality of depressions and projection.
Of the present invention one preferred aspect, elastomeric element comprises a plurality of contact portions, and break away to promote part to comprise that is used for making and another interconnective interconnecting parts in described a plurality of contact portion.
Of the present invention one preferred aspect, break away to promote part comprise one be formed on the contact portion to the groove that is recessed on, and when in the pressure fluid input chamber, this groove closely contacts with the substrate generation.
Because the present invention has said structure, when fluid sprays to substrate, break away from the promotion part and begin to be removed, so that contact portion and substrate successfully break away from from substrate.Therefore, substrate can be passed to the substrate lowering or hoisting gear, do not damaged by fluid pressure as pusher.In addition, can be successfully from the elastomeric element release liners and be not subjected to the substrate kind, particularly be formed at the influence of the kind of the film on the substrate back (upper surface).
According to a further aspect in the invention, provide a kind of burnishing device, it comprises: substrate holding apparatus; And polishing block with polished surface.
According to a further aspect in the invention, provide a kind of and be used for polished substrate kept and be pressed against substrate holding apparatus on the polished surface, this substrate holding apparatus comprises: the movable member that can move perpendicular to polished surface; And one link to each other to be used to limit the elastic membrane of a plurality of chambers with described movable member; This elastic membrane comprises the contact portion and a plurality of perisporiums that are used to be connected contact portion and movable member that contact with described substrate, and each in a plurality of circle wall has one can be perpendicular to polished surface stretching, extension and the scalable part of shrinking.
Because the present invention has said structure, when fluid is imported above-mentioned chamber, owing to scalable part stretches perpendicular to polished surface, so the contact portion of elastomeric element can hold its shape.Therefore, the contact area between elastic membrane (contact portion) and the substrate can remain unchanged, and can obtain uniform polishing rate thus on the whole polished surface of substrate.In addition, because elastic membrane keeps good the contact with substrate each other by scalable part, so can use the elastic membrane of high rigidity.Therefore, the durability of elastic membrane can be improved.In this case, compare with the elastic membrane of soft, the elastic membrane of high rigidity can keep the contact area between substrate and the elastic membrane (contact portion).Thus, can obtain stable polishing rate.
Of the present invention one preferred aspect, elastic membrane has overall structure.
Because the present invention has said structure, can prevent that fluid leaks from going out described chamber.In addition, after the polishing of substrate was finished, substrate can break away from contact portion at an easy rate.If elastic membrane is divided into a plurality of separating parts, then some in these separating parts may stick on the substrate, thereby hinders substrate successfully to break away from.According to the present invention, integrally formed elastic membrane makes substrate successfully to break away from contact portion.
Of the present invention one preferred aspect, contact portion has one and is positioned on its outer rim and acclivitous sloping portion.
Of the present invention one preferred aspect, described sloping portion has crooked cross section.
Of the present invention one preferred aspect, described sloping portion has straight cross section.
Because the present invention has said structure, the circumferential edges of substrate keeps not contacting with elastic membrane each other.Therefore, do not have thrust to be applied on the circumferential edges of substrate, can prevent that thus the circumferential edges of substrate is by excessive polishing.
Of the present invention one preferred aspect, sloping portion is thinner than contact portion.
Because the present invention has said structure, sloping portion is easy to distortion under fluid pressure.Therefore, sloping portion can contact under the thrust of expectation with the circumferential edges of substrate.Like this, can control the polishing rate at the circumferential edges place of substrate independently.
According to a further aspect in the invention, provide a kind of burnishing device, it comprises: described substrate holding apparatus; And polishing block with polished surface.
Description of drawings
Fig. 1 is the integrally-built cross-sectional view of a burnishing device, and wherein said burnishing device has the substrate holding apparatus according to the first embodiment of the present invention;
Fig. 2 is mounted in the vertical cross-section view according to the apical ring in the substrate holding apparatus of the first embodiment of the present invention;
Fig. 3 A-3C is the amplification cross-sectional view of center sleeve shown in Figure 2;
Fig. 4 A is the cross-sectional view of the total of the marginal membrane in the first embodiment of the present invention;
Fig. 4 B and 4C are the partial cross section views of substrate holding apparatus shown in Figure 2;
Fig. 5 A and 5B are the partial cross section views of substrate holding apparatus according to a second embodiment of the present invention;
Fig. 6 A is the partial cross section view of the substrate holding apparatus of a third embodiment in accordance with the invention;
Fig. 6 B is the partial cross section view of another structure of the marginal membrane in the third embodiment of the present invention;
Fig. 7 is the partial cross section view of the substrate holding apparatus of a fourth embodiment in accordance with the invention;
Fig. 8 A is the cross-sectional view of marginal membrane according to a fifth embodiment of the invention;
Fig. 8 B is the cross-sectional view of another structure of the marginal membrane in the fifth embodiment of the present invention;
Fig. 9 A is the cross-sectional view of marginal membrane according to a sixth embodiment of the invention;
Fig. 9 B is the reference diagram that illustrates the extensibility of marginal membrane according to a sixth embodiment of the invention;
Figure 10 A is the cross-sectional view of marginal membrane according to a seventh embodiment of the invention;
Figure 10 B-10E is respectively the cross-sectional view of another structure of the marginal membrane in the seventh embodiment of the present invention;
Figure 11 A and 11B are the partial cross section views according to the substrate holding apparatus of the eighth embodiment of the present invention;
Figure 12 A is the cross-sectional view according to the part of the substrate holding apparatus of the tenth embodiment of the present invention;
Figure 12 B is along the view of the part of the observed substrate holding apparatus of direction shown in the arrow A among Figure 12 A;
Figure 13 is along the view of the observed intermediate coat of direction shown in the arrow B among Figure 12 A;
Figure 14 is the perspective view that is combined in according to the air bag in the substrate holding apparatus of the tenth embodiment of the present invention;
Figure 15 is the rearview that is combined in according to the elastomeric element in the substrate holding apparatus of the 11st embodiment of the present invention;
Figure 16 is the rearview that is combined in according to first example of the elastomeric element in the substrate holding apparatus of the 12nd embodiment of the present invention;
Figure 17 is the rearview that is combined in according to second example of the elastomeric element in the substrate holding apparatus of the 12nd embodiment of the present invention;
Figure 18 is the rearview that is combined in according to the 3rd example of the elastomeric element in the substrate holding apparatus of the 12nd embodiment of the present invention;
Figure 19 is the rearview that is combined in according to the 4th example of the elastomeric element in the substrate holding apparatus of the 12nd embodiment of the present invention;
Figure 20 is the integrally-built cross-sectional view of a burnishing device, and wherein said burnishing device has the substrate holding apparatus according to the 13rd embodiment of the present invention;
Figure 21 is the vertical cross-section view according to the apical ring in the 13rd embodiment of the present invention;
Figure 22 A is the view according to the part of the apical ring of the 13rd embodiment of the present invention;
Figure 22 B shows the state when wherein fluid is transfused to pressure chamber;
Figure 23 A is the view according to the part of the apical ring of the 14th embodiment of the present invention;
Figure 23 B shows the state when wherein fluid is transfused to pressure chamber;
Figure 24 A is the view according to the part of the apical ring of the 15th embodiment of the present invention;
Figure 24 B shows the state when wherein fluid is transfused to pressure chamber;
Figure 25 A is the view according to the part of the apical ring of the 16th embodiment of the present invention;
Figure 25 B shows the state when wherein fluid is transfused to pressure chamber;
Figure 26 A is the view according to the part of the substrate holding apparatus of the 17th embodiment of the present invention;
Figure 26 B shows the state when wherein fluid is transfused to pressure chamber;
Figure 27 A is the amplification cross-sectional view according to the part of first example of the apical ring of the 18th embodiment of the present invention;
Figure 27 B is the amplification cross-sectional view according to the part of second example of the apical ring of the 18th embodiment of the present invention;
Figure 27 C is the amplification cross-sectional view according to the part of the 3rd example of the apical ring of the 18th embodiment of the present invention;
Figure 28 A is the amplification cross-sectional view according to the part of first example of the apical ring of the 19th embodiment of the present invention;
Figure 28 B is the amplification cross-sectional view according to the part of second example of the apical ring of the 19th embodiment of the present invention;
Figure 28 C is the amplification cross-sectional view according to the part of the 3rd example of the apical ring of the 19th embodiment of the present invention;
Figure 29 A and 29B are the partial cross section views of conventional substrate holding device.
Embodiment
Below with reference to accompanying drawings substrate holding apparatus and burnishing device according to the first embodiment of the present invention are elaborated.
Fig. 1 is the integrally-built cross-sectional view of a burnishing device, and wherein said burnishing device has the substrate holding apparatus according to the first embodiment of the present invention.This substrate holding apparatus is used for keeping polished substrate, also this substrate is pressed on the polished surface of polishing block as semiconductor wafer.As shown in Figure 1, have a polishing block 100 in formation below the apical ring 1 of substrate holding apparatus of the present invention, polishing block 100 has lip-deep polishing pad 101 attached thereto.On polishing block 100, have a polishing fluid supply nozzle 102, and polishing fluid Q is applied on the polished surface 101a of the polishing pad 101 that places on the polishing block 100 by polishing fluid supply nozzle 102.
Having various polishing pads on the market sells.For example, comprising SUBA800, IC-1000 and the IC-1000/SUBA100 (layer cloth) of RodelInc. manufacturing, and the Surfinxxx-5 and the Surfin000 of FujimiInc. manufacturing.SUBA800, Surfinxxx-5 and Surfin000 are by the bonding nonwoven fabrics of polyurethane resin, and IC-1000 is made by hard foam polyurethane (individual layer).Foamed polyurethane is a porous, and has and be formed on its lip-deep a large amount of fine recesses or hole.
Apical ring driving shaft 11 is connected on the turnbarrel 112 by a key (not shown).Turnbarrel 112 has a synchronous pulley 113 that is fixedly installed on its peripheral part.Apical ring motor 114 is fixed on the apical ring skull 110, and pulley 113 links to each other with a synchronous pulley 116 that is installed on the apical ring motor 114 by synchronous belt 115 synchronously.Therefore, when the 114 energising rotations of apical ring motor, turnbarrel 112 and apical ring driving shaft 11 are rotated synchronously with one another by synchronous pulley 116, synchronous belt 115 and synchronous pulley 113, to rotate apical ring 1 thus.Apical ring skull 110 is supported by apical ring driving shaft 117, and apical ring driving shaft 117 is supported by a support (not shown) rotation.
To the apical ring 1 that serve as according to the substrate holding apparatus of the first embodiment of the present invention be elaborated down.Fig. 2 is the vertical cross-section diagram according to the apical ring 1 of first embodiment.
As shown in Figure 2, the apical ring 1 that serves as substrate holding apparatus comprises the apical ring body 2 of column shape container shape and the circumferential clasp 3 that is fixed on the lower end of apical ring body 2, and wherein apical ring body 2 has a spatial accommodation that is formed in it.Apical ring body 2 is by the material of high strength and high rigidity, make as metal or pottery.Snap ring 3 is made by the resin of high rigidity, pottery etc.
The lip ring 2c that the annular that apical ring body 2 comprises column shape container shape shell 2a, put into the stylolitic part of shell 2a adds compressing tablet strutting piece 2b and puts into the groove on the circumferential edges of the upper surface that is formed at shell 2a.Snap ring 3 is fixed on the lower end of the shell 2a of apical ring body 2.Snap ring 3 have one radially inwardly outstanding than lower part.Snap ring 3 can with apical ring body 2 monolithic moldings.
Apical ring driving shaft 11 is positioned on the middle part of shell 2a of apical ring body 2, and apical ring body 2 links together by universal joint 10 and apical ring driving shaft 11.Universal joint 10 has a ball bearing mechanism and one and is used for the rotation of apical ring driving shaft 11 is passed to the rotating actuator of apical ring body 2, and wherein apical ring body 2 and apical ring driving shaft 11 can be tilted in relation to each other by described ball bearing mechanism.Ball bearing mechanism and rotating actuator pass thrust and revolving force to apical ring body 2 from apical ring driving shaft 11, allow apical ring body 2 and apical ring driving shaft 11 to be tilted in relation to each other simultaneously.
Ball bearing mechanism comprises the recessed groove 11a of the hemisphere at the lower surface center that is limited to apical ring driving shaft 11, be limited to the recessed groove 2d of hemisphere at shell 2a upper surface center and make and be placed on bearing ball 12 between recessed groove 11a and the 2d by high hardness material such as pottery.Rotating actuator comprises the drive pin (not shown) that is fixed on the driving shaft 11 and is fixed on and is driven the pin (not shown) on the shell 2a.Even apical ring body 2 tilts with respect to apical ring driving shaft 11, because drive pin and be driven pin vertical moving toward each other, drive pin and be driven pin and keep intermeshing contact point displacement simultaneously.Thus, rotating actuator passes to apical ring body 2 with the moment of torsion of apical ring driving shaft 11 reliably.
Between retaining ring 5 and apical ring body 2, have one comprise elastic membrane add compressing tablet 13.Add compressing tablet 13 have be clipped in shell 2a and apical ring body 2 add the radially outer edge between the compressing tablet strutting piece 2b and be clipped in seat ring 5 and chuck 6 between radially inner edge.Apical ring body 2, chuck 6, seat ring 5 and add compressing tablet 13 and in apical ring body 2, limit a pressure chamber 21 jointly.As shown in Figure 2, pressure chamber 21 communicates with the fluid passage 32 that comprises pipe, connector etc.Pressure chamber 21 links to each other with pressure regulating unit 120 by the adjuster R2 that is positioned on the fluid passage 32.Add compressing tablet 13 elastomeric material high and durable, make as ethylene propylene diene rubber (EPDM), polyurethane rubber or silicon rubber by intensity.
When adding compressing tablet 13 and make by elastomeric material such as rubber, be clamped in regularly between snap ring 3 and the apical ring body 2 if add compressing tablet 13, then, can not on the lower surface of snap ring 3, keep the horizontal surface of expecting owing to add the elastic deformation of compressing tablet 13 as elastomeric material.For avoiding this defective, in the present embodiment, add that compressing tablet 13 is clipped in the shell 2a of apical ring body 2 and with adding between the compressing tablet strutting piece 2b that separable parts provide.Snap ring 3 can be with respect to apical ring body 2 vertical moving, and perhaps snap ring 3 can have one and can be independent of the structure that apical ring body 2 compresses polished surface 101a.In the case, adding compressing tablet 13 not necessarily must fix in the above described manner.
One annular edge velum (elastomeric element) 7 is set on the outer circumferential edges of chuck 6, and contacts with the outer circumferential edges of the semiconductor wafer W that keeps by apical ring 1.The top of marginal membrane 7 is clipped between the outer circumferential edges and ring edge ring 4 of chuck 6, and marginal membrane 7 is attached on the chuck 6 thus.
When semiconductor wafer W was polished, semiconductor wafer W was rotated by the rotation of apical ring 1.Marginal membrane 7 is very little with the contact area of semiconductor wafer W, and therefore being easy to can not be to the enough driving torque of semiconductor wafer W transmission.So, on the lower surface of chuck 6, fix (sky) air bag 19 in the middle of the annular, closely contacting with semiconductor wafer W, thus can be by center sleeve 19 to the enough moments of torsion of semiconductor wafer W transmission.Center sleeve 19 is positioned at the radially inner side of marginal membrane 7, and contacts with enough big contact area with semiconductor wafer W, with to the enough moments of torsion of semiconductor wafer W transmission.
The air-bag support 92 that center sleeve 19 comprises the elastic membrane 91 that contacts with the upper surface of semiconductor wafer W and is used for separably elastic membrane 91 being held in place.Lower surface at chuck 6 forms a ring-shaped groove 6a, and air-bag support 92 is fixedly mounted on the ring-shaped groove 6a by the screw (not shown).The top that constitutes the elastic membrane 91 of center sleeve 19 is clipped between ring-shaped groove 6a and the air-bag support 92, thereby elastic membrane 91 is installed on the lower surface of chuck 6 separably.
An annular space that is limited by marginal membrane 7, center sleeve 19, semiconductor wafer W and chuck 6 serves as pressure chamber 24.Pressure chamber 24 communicates with the fluid passage 35 that comprises pipeline, connector etc.Pressure chamber 24 links to each other with pressure regulating unit 120 by the adjuster R5 that is arranged on the fluid passage 35.
An annular space that is limited by center sleeve 19, semiconductor wafer W and chuck 6 serves as pressure chamber 25.Pressure chamber 25 communicates with the fluid passage 36 that comprises pipeline, connector etc.Pressure chamber 25 links to each other with pressure regulating unit 120 by the adjuster R6 that is arranged on the fluid passage 36. Fluid passage 32,33,34,35 links to each other with adjuster R2-R6 respectively by the swivel joint (not shown) that is arranged on apical ring skull 110 tops with 36.
In the seal 2c of apical ring body 2, form the cleaning liquid passage 51 of groove form ringwise near the outer circumferential edges place of the upper surface of shell 2a.Cleaning liquid passage 51 communicates with fluid passage 30 and provides cleaning liquid such as pure water by fluid passage 30.A plurality of intercommunicating pores 53 stretch out and pass shell 2a and increased pressure board strutting piece 2b from cleaning liquid passage 51.Intercommunicating pore 53 and communicate with little clearance G between snap ring 3 inner circumferential surfaces at the external peripheral surface of marginal membrane 7.
Because little clearance G is formed between the external peripheral surface and snap ring 3 of marginal membrane 7, the parts that comprise support ring 5, chuck 6, are installed in the marginal membrane 7 on the chuck 6 can be with unsteady mode vertical moving with respect to apical ring body 2 and snap ring 3.Chuck 6 has from the radially outward outstanding a plurality of protruding 6c of its outer circumferential edges.When the upper surface engagement of the inside projection of protruding 6c and snap ring 3, comprise that the moving downward of parts of chuck 6 is limited in ad-hoc location.
With reference to Fig. 3 A-3C middle air bag 19 is elaborated below.Fig. 3 A-3C is the amplification cross-sectional view of center sleeve shown in Fig. 2.
As shown in Figure 3A, the elastic membrane 91 of center sleeve 19 has contact portion 91b in the middle of, middle contact portion 91b has outwards outstanding flange 91a, from the outward extending extension 91d of the base portion 91c of flange 91a between extension 91d and flange 91a, to form groove 93 and to be connected to coupling part 91e on the chuck 6 by air-bag support 92.Extension 91d extends outwardly into the position of inboard, flange 91a top from the base portion of flange 91a, and coupling part 91e extends upward from the outer end of extension 91d.Flange 91a, middle contact portion 91b, coupling part 91e and extension 91d form an integral body each other, and are manufactured from the same material.Central part at middle contact portion 91b forms an opening 91f.
By this structure, under chuck 6 is raised with the situation (referring to Fig. 3 B) of polishing after tight contact of middle contact portion 91b generation of semiconductor wafer and center sleeve 19, the power that makes progress of coupling part 91e is extended part 91d and changes into level or oblique power, and the base portion 91c that the power after the conversion is applied in flange 91a goes up (referring to Fig. 3 C).Therefore, the power that makes progress that is applied on the base portion 91c of flange 91a can be very little, is not applied to contact portion 91b thereby do not have excessive upward force.Therefore, near base portion 91c, vacuum can be do not formed, the polishing rate of homogeneous can be on the whole surface except that flange 91a of middle contact portion 91b, obtained thus.In this case, the length of the thickness of coupling part 91e or flange 91a can change between the coupling part of radially inner side and the coupling part at radial outside.In addition, the length of extension 91d can change between the extension of radially inner side and the extension at radial outside.In addition, the thickness of flange 91a can change according to the type of type that is formed at the film on the polished semiconductor wafer or polishing pad.When resistance on being delivered to semiconductor wafer or polishing moment of torsion were big, the thickness of flange 91a should be preferably bigger, to avoid the distortion of flange 91a.
With reference to Fig. 4 A-4C the marginal membrane 7 according to present embodiment is elaborated below.Fig. 4 A is the integrally-built sectional view according to the marginal membrane of the first embodiment of the present invention, and Fig. 4 B and 4C are the partial cross section views of substrate holding apparatus shown in Figure 2.
Marginal membrane (elastomeric element) 7 according to present embodiment comprises annular contact portion 8 that contacts with the outer circumferential edges of semiconductor wafer W and the annular perisporium 9 that extends upward and link to each other with chuck 6 from contact portion 8.This perisporium 9 comprises periphery wall 9a and is positioned at the internal perisporium 9b of the radially inner side of periphery wall 9a.Contact portion 8 has the profile of inwardly radially extending from perisporium 9 (being periphery wall 9a and internal perisporium 9b).Contact portion 8 has one between periphery wall 9a and internal perisporium 9b and along the slit 18 that circumferentially extends.Especially, the position of slit 18 between periphery wall 9a and internal perisporium 9b is divided into outer contacting part 8a and interior contact portion 8b with contact portion 8.
Shown in Fig. 4 B and 4C, periphery wall 9a and internal perisporium 9b extend upward along the external peripheral surface and the inner circumferential surface of ring edge ring 4 respectively.The upper end of periphery wall 9a and internal perisporium 9b is clipped in respectively between the upper surface of chuck 6 and edge ring 4.Edge ring 4 remains on the chuck 6 by the screw (not shown), thereby marginal membrane 7 is separably attached on the chuck 6.Fluid passage 33 vertical extent pass edge ring 4 and in the lower surface upper shed of edge ring 4.Therefore, the annular pressure chamber 22 that is limited by edge ring 4, marginal membrane 7 and semiconductor wafer W communicates with fluid passage 33, and links to each other with pressure regulating unit 120 with adjuster R3 by fluid passage 33.
The pressure chamber 21 and the pressure chamber 22,23,24 and 25 that are positioned on the chuck 6 are supplied to pressure fluid such as compressed air, perhaps produce normal pressure or vacuum by the fluid passage 32,33,34,35 and 36 that links to each other with the relevant pressure chamber in pressure chamber 21,22,23,24 and 25.Especially, be separately positioned on the pressure that adjuster R2-R6 on fluid passage 32,33,34,35 and 36 can regulate the pressure fluid that offers relevant pressure chamber 21,22,23,24 and 25 respectively.Thus, controlled pressure chamber 21,22,23,24 and 25 pressure independently, or in pressure chamber 21,22,23,24 and 25, produce normal pressure or vacuum independently.
As mentioned above, marginal membrane 7 has the contact portion 8 (interior contact portion 8b) that extends radially inwardly in its lower end, and center sleeve 19 has flange 91a in its lower end.Contact portion 8 (interior contact portion 8b) and flange 91a take place closely to contact with semiconductor wafer W with 24 pressure fluid by offering pressure chamber 22,23.Therefore, the pressure fluid in the pressure chamber 22,23 and 24 does not flow below marginal membrane 7 and center sleeve 19.Especially, contact portion 8 and the pressurized fluid of flange 91a are pressed on the semiconductor wafer W, and marginal membrane 7 keeps closely contacting with center sleeve 19 and semiconductor wafer W thus.Therefore, the pressure in each chamber in the controlled pressure chamber 22,23 and 24 stably.
In this case, offer the pressure fluid of pressure chamber 22,23,24 and 25 or when producing normal pressure therein the atmosphere of the above-mentioned pressure chamber that offers all can be independently controlled temperature.By this structure, can directly control the temperature of workpiece such as semiconductor wafer from the back side of polished surface.Especially, when the temperature of each pressure chamber was controlled separately, the chemical reaction velocity among this chemical polishing technology CMP can be controlled.
Below, the operation of apical ring 1 of structure thus is elaborated.
In having the burnishing device of said structure, when semiconductor wafer W was admitted to burnishing device, apical ring 1 entirely was moved to the delivering position that transmits semiconductor wafer W.Diameter in semiconductor wafer W is under the situation of 200mm, and pressure regulating unit 120 is communicated with by fluid passage 34 with pressure chamber 23.Diameter in semiconductor wafer W is under the situation of 300mm, and pressure regulating unit 120 is communicated with by fluid passage 35 with pressure chamber 24.Then, pressure chamber 23 or 24 passes through pressure regulating unit 120 emptyings, thereby makes semiconductor wafer W be drawn onto the lower end of apical ring 1 under vacuum by the swabbing action of pressure chamber 23 or 24.After semiconductor wafer W was drawn onto on the apical ring 1, apical ring entirely was moved to the position on the polishing block 100 with the polished surface 101a that is positioned on the polishing pad 101.The outer circumferential edges of semiconductor wafer W is kept by snap ring 3, and semiconductor wafer W can not break away from from apical ring 1 thus, and perhaps semiconductor wafer W can not slided.
Afterwards, stop by pressure chamber 23 or 24 pairs of attractions that semiconductor wafer W applies.Approximately simultaneously, start the apical ring cylinder 111 that is connected on the apical ring driving shaft 11, be pressed against on the polished surface 101a of polishing block 100 with predetermined pressure will remain on apical ring 1 following snap ring 3.Then, with pressure fluid input pressure chamber 21, moving down chuck 6, thereby marginal membrane 7 and center sleeve 19 are pressed against on the semiconductor wafer W.Like this, the lower surface of marginal membrane 7 can take place closely to contact with center sleeve 19 with semiconductor wafer upper surface originally.In this state, have separately that the pressure fluid of different pressures is transfused to pressure chamber 22,23,24 and 25 respectively, thereby chuck is moved upward, and semiconductor wafer W is compressed against on the polished surface 101a of polishing block 100 simultaneously.At this moment, scalable part 40a, 40b on the marginal membrane 7 are stretched, to follow moving upward of chuck 6.Therefore, the lower surface of marginal membrane 7, be that contact area between the outer circumferential edges of contact portion 8 and semiconductor wafer W can remain unchanged.Polishing fluid supply nozzle 102 provides polishing fluid Q in advance on the polished surface 101a of polishing pad 101, polishing fluid Q remains on the polishing pad 101 thus.Thus, semiconductor wafer W is polished under the situation that has polishing fluid Q between its polished (descending) surface and the polishing pad 101.
Serve as substrate holding apparatus by apical ring 1, because the contact area between the outer circumferential edges of marginal membrane 7 and semiconductor wafer W remains unchanged, so the thrust that can prevent to be applied on the outer circumferential edges of semiconductor wafer W is changed according to present embodiment.Therefore, the whole surface that comprises the outer circumferential edges of semiconductor wafer W all can be pressed against on the polished surface 101a with uniform thrust.Therefore, the polishing rate that can prevent the outer circumferential edges place of semiconductor wafer W reduces.In addition, the polishing rate of location of radially inner side that can also prevent to be positioned at the outer circumferential edges of semiconductor wafer W increases.Especially, when the diameter of semiconductor wafer is 200mm, can prevent to increase apart from the polishing rate of the location of the about 20mm of outer circumferential edges of semiconductor wafer W.When the diameter of semiconductor wafer is 300mm, can prevent to increase apart from the polishing rate of the location of the about 25mm of outer circumferential edges of semiconductor wafer W.
The slit 18 that along the circumferential direction extends that is formed in the contact portion 8 of marginal membrane 7 can improve the extensibility of perisporium 9 (periphery wall 9a and internal perisporium 9b) on downward direction effectively.Therefore, even when the pressure hour of the pressure fluid that offer pressure chamber 22, the contact area between marginal membrane 7 and the semiconductor wafer W also can remain unchanged.Thus, can compress semiconductor wafer W with littler thrust.
The regional area that is positioned on the semiconductor wafer W under pressure chamber 22,23,24 and 25 is compressed against on the polished surface 101a under the pressure effect of the pressure fluid that offers pressure chamber 22,23,24 and 25.Therefore, the pressure that offers the pressure fluid of pressure chamber 22,23,24 and 25 is controlled independently of one another, thereby the whole surface of semiconductor wafer W can be pressed against on the polished surface with uniform thrust.Therefore, can on the whole surface of semiconductor wafer W, obtain uniform polishing rate.Similarly, adjuster R2 regulates the pressure of the pressure fluid that offers pressure chamber 21, to change the pressure that is imposed on polishing pad 101 by snap ring 3.Like this, during polishing, impose on the pressure of polishing pad 101 and the pressure that semiconductor wafer W is pressed against on the polishing pad 101 is suitably regulated by snap ring 3, with the polishing profile of control semiconductor wafer W by being used for of applying of each pressure chamber 22,23,24 and 25.Semiconductor wafer W has one and applies the zone of thrust by pressure fluid by the contact portion of center sleeve 19, also has a zone that directly applies the pressure of pressure fluid.The pressure that is applied on these zones is equal to each other.
As mentioned above, snap ring 3 is pressed against polishing pad 101 upward pressures and is suitably regulated by what apical ring cylinder 111 applied, so that semiconductor wafer W is polished by the pressure that semiconductor wafer W is pressed against on the polishing pad 101 that the pressure fluid of input pressure chamber 22,23,24 and 25 applies.When the polishing of semiconductor wafer W is finished, stop to provide pressure fluid, and the pressure of pressure chamber 22,23,24 and 25 is reduced to atmospheric pressure to pressure chamber 22,23,24 and 25.Afterwards, with pressure chamber 23 or pressure chamber's 24 emptyings, producing negative pressure therein, thereby semiconductor wafer W is adsorbed on the lower surface of apical ring 1 once more.At this moment, in pressure chamber 21, produce atmospheric pressure or negative pressure.This is that then semiconductor wafer W is pressed against on the polished surface 101a by the lower surface part of chuck 6 because if pressure chamber 21 keeps high pressure.
After semiconductor wafer W was adsorbed in the above described manner, apical ring 1 was integrally moved to delivering position, 35 sprayed fluid (for example mixture of pressure fluid or nitrogen and pure water) to semiconductor wafer W from the fluid passage then, to discharge semiconductor wafer W from apical ring 1.
The polishing fluid Q that is used for polishing of semiconductor wafers W is easy to the external peripheral surface of inflow edge film 7 and the little clearance G between the snap ring 3.If polishing fluid Q is deposited in the clearance G firmly, then can hinder support ring 5, chuck 6 and marginal membrane 7 with respect to apical ring body 2 and snap ring 3 vertical moving successfully.For avoiding this defective, import cleaning liquid such as pure water to annular cleaning liquid passage 51 by fluid passage 30.Therefore, pure water cleans clearance G thus by the space above a plurality of intercommunicating pore 53 input clearance G, firmly is deposited in the clearance G to prevent polishing fluid Q.Preferably, pure water is input after the semiconductor wafer W of polishing breaks away from, and till the polished semiconductor wafer of the next one attracted on the apical ring 1.
Below with reference to Fig. 5 A and 5B according to a second embodiment of the present invention substrate holding apparatus is described.Fig. 5 A and 5B are the partial cross section views of substrate holding apparatus according to a second embodiment of the present invention; According to identical with according to the substrate holding apparatus of first embodiment of the CONSTRUCTED SPECIFICATION of the substrate holding apparatus of second embodiment, will no longer be described below.
As Fig. 5 A, the scalable part 40a that is formed in the periphery wall 9a is positioned near the top of periphery wall 9a.Edge ring 4 has one and is used to hold the annular that is positioned at scalable part 40a wherein and holds groove 4a.Hold in the external peripheral surface that groove 4a is formed on edge ring 4, and extend along the circumferencial direction of edge ring 4.Shown in Fig. 5 B, even the width that holds groove 4a is greatly to being enough to allow that scalable part 40a can not contact with edge ring 4 yet downwards when stretching.Edge ring 4 has a compacting part 45 that contacts with the upper surface of outer contacting part 8a (contact portion 8), is used for outer contacting part 8a is pressed against the outer circumferential edges of semiconductor wafer W.On the lower surface of compacting part 45, be formed with a plurality of grooves 46 that radially extend.Offer the upper surface of the outer contacting part 8a that constitutes contact portion by groove 46 by the pressure fluid of fluid passage 33 input pressure chambers 22.In the present embodiment, compacting part 45 and edge ring 4 global formations.But, compacting part 45 also can separate with edge ring 4.
Below the operation according to the substrate holding apparatus with said structure of present embodiment is described.The details of operation of substrate holding apparatus according to a second embodiment of the present invention is identical with substrate holding apparatus according to the first embodiment of the present invention, will no longer be described below.
Semiconductor wafer W is placed on the polished surface 101a by apical ring 1, and pressure fluid input pressure chamber 21 then is to move down chuck 6 and edge ring 4.At this moment, the lower surface of compacting part 45 contacts with the upper surface of outer contacting part 8a, thereby compacting part 45 is pressed against outer contacting part 8a on the semiconductor wafer W with predetermined pressure.Marginal membrane 7 keeps enough closely contacting with semiconductor wafer W thus each other.Under this state, with pressure fluid input pressure chamber 22,23,24 and 25.
Offer the upper surface of outer contacting part 8a rapidly by groove 46 by the pressure fluid of fluid passage 33 input pressure chambers 22.Therefore, in pressure fluid input pressure chamber 22, pressure fluid is pressed against outer contacting part 8a on the semiconductor wafer W.Along with pressure fluid input pressure chamber 22,23,24 and 25, chuck 6 moves up, and the scalable part 40b of the scalable part 40a of periphery wall 9a and internal perisporium 9b is stretched.At this moment, the pockets 4a internal modification of scalable part 40a in being formed at edge ring 4.Therefore, prevented that scalable part 40a from contacting with edge ring 4, guaranteed the extensibility that it is excellent thus.By this way, semiconductor wafer W is polished under the state that is pressed against on the polished surface 101a by pressure chamber 22,23,24 and 25.
According to the substrate holding apparatus with said structure, compacting part 45 can make marginal membrane 7 and semiconductor wafer W take place closely to contact.Therefore, can prevent the pressure fluid leakage of input pressure chamber 22.In addition, pressure fluid can offer the upper surface of outer contacting part 8a by groove 46 rapidly.Therefore, pressure fluid can begin outer contacting part 8a is pressed against on the semiconductor wafer W in marginal membrane 7 compacted parts 45 extruding.In addition, scalable part 40a is positioned near the periphery wall 9a.Therefore, can improve the extensibility of periphery wall 9a, and prevent that periphery wall 9a from along the circumferential direction twisting, thereby make that marginal membrane 7 can be all the time with the same manner work.
With reference to Fig. 6 A and 6B the marginal membrane 7 of a third embodiment in accordance with the invention is described below.Fig. 6 A is the partial cross section view of the substrate holding apparatus of a third embodiment in accordance with the invention, and Fig. 6 B is the partial cross section view of another structure of the marginal membrane in the third embodiment of the present invention.The structure of the substrate holding apparatus of a third embodiment in accordance with the invention and details of operation are identical with according to a second embodiment of the present invention substrate holding apparatus, will no longer be described below.
As shown in Figure 6A, the outer contacting part 8a of the formation contact portion 8 that compacted parts 45 are pushed has one thick 48 on the surface thereon.Thick 48 circumferencial direction along outer contacting part 8a extends, and has basic arc (bow) cross section.Contact portion 8a is embedded in a reinforcing member 50 that is used to strengthen the intensity of outer contacting part 8a outside.Compacting part 45 has a step on its lower surface, to form the first pressing surface 45a and the second pressing surface 45b that is positioned at first pressing surface 45a top.The first pressing surface 45a contacts with outer contacting part 8a, and the second pressing surface 45b contacts with thick 48.Have a plurality of groove 46a and 46b that radially extend among the first pressing surface 45a and the second pressing surface 45b respectively.As second embodiment, groove 46a, 46b make pressure fluid begin outer contacting part 8a is pressed against on the semiconductor wafer W in marginal membrane 7 compacted parts 45 extruding.
As mentioned above, according to present embodiment, the outer contacting part 8a that compacted parts 45 are pushed has thick 48, and contact portion 48 is embedded in strengthening part 50 outside.By this structure, can strengthen the mechanical strength of outer contacting part 8a.Therefore, when the compacted parts 45 of outer contacting part 8a are pressed against on the semiconductor wafer W, can prevent that outer contacting part 8a from along the circumferential direction twisting.Therefore, marginal membrane 7 can keep tight each other with semiconductor wafer W and contact, thereby prevents the pressure fluid seepage.
In addition, owing to have curved substantially cross section for thick 48, relatively be not easy to firmly be deposited on thick 48 place so entered the polishing fluid of pressure chamber 22.In addition, the lower surface of compacting part 45, promptly the second pressing surface 45b does not keep tight the contact each other with thick 48, make thus compacting part 45 be easy to thick 48 disengage.Can select to use one in thick 48 or the strengthening part 50 to strengthen contact portion 8.Shown in Fig. 6 B, thick 48 can have triangular cross section.
With reference to Fig. 7 the substrate holding apparatus of a fourth embodiment in accordance with the invention is described below.Fig. 7 is the partial cross section view of the substrate holding apparatus of a fourth embodiment in accordance with the invention.The structure of the substrate holding apparatus of a fourth embodiment in accordance with the invention is identical with the substrate holding apparatus of a third embodiment in accordance with the invention with details of operation, will no longer be described below.Be with the different of substrate holding apparatus according to the substrate holding apparatus of the 4th embodiment: be used for providing the fluid supply port of pressure fluid to be arranged on edge ring, rather than in the lower surface of compacting part, provide groove to the upper surface of contact portion according to the 3rd embodiment.
As shown in Figure 7, edge ring 4 has a through hole 180 that is formed at wherein and is communicated with fluid passage 33.Through hole 180 has three openings, promptly outwards contact portion 8a (contact portion 8) open wide the first opening 180a that serves as the fluid supply port, the second opening 180b that opens wide to the scalable part 40b of internal perisporium 9b and at the 3rd opening 180c of the external peripheral surface place of edge ring 4 opening.The pressure fluid of introducing through holes 180 by fluid passage 33 is divided into three fluid streams in the edge ring 4.Especially, the pressure fluid that constitutes first strand provides from the upper surface of the outside contact portion 8a of the first opening 180a, the pressure fluid that constitutes second strand provides to the scalable part 40b of internal perisporium 9b from the second opening 180b, provides to the back side of periphery wall 9a from the 3rd opening 180c and constitute the 3rd strand pressure fluid.
By this structure, when the compacted parts 45 of contact portion 8a pushed outside, pressure fluid was provided for the upper surface of outer contacting part 8a.Therefore, as above-mentioned the 3rd embodiment, in marginal membrane 7 compacted parts 45 extruding, pressure fluid can begin to push outer contacting part 8a (contact portion 8).
With reference to Fig. 8 A and 8B according to a fifth embodiment of the invention marginal membrane is described below.Fig. 8 A is the cross-sectional view of marginal membrane according to a fifth embodiment of the invention, and Fig. 8 B is the cross-sectional view of another structure of the marginal membrane in the fifth embodiment of the present invention.
In marginal membrane, form scalable part by along the circumferential direction folding a part of perisporium according to first embodiment.Perhaps, shown in Fig. 8 A, perisporium 9 can be by making than contact portion 8 soft materials, thereby scalable part 40 is provided.Perhaps, shown in Fig. 8 B, perisporium 9 can be thinner than contact portion 8, thereby scalable part 40 is provided.According to these structures, as according to the scalable part of the foregoing description, perisporium 9 can be vertically, promptly flexible perpendicular to semiconductor wafer.
With reference to Fig. 9 A and 9B according to a sixth embodiment of the invention marginal membrane is described below.Fig. 9 A is the cross-sectional view of marginal membrane according to a sixth embodiment of the invention, and Fig. 9 B is the reference diagram that the extensibility of marginal membrane according to a sixth embodiment of the invention is described.Marginal membrane according to present embodiment has and the basic structure identical according to the marginal membrane of second embodiment.
Shown in Fig. 9 A, the folded part 71 of scalable part 40 and the coupling part 72 between perisporium 9 and contact portion 8 have basic arc-shaped cross-section respectively.Shown in Fig. 9 B, usually,,, thereby the extensibility of each parts is restricted even then this corner angle cross section still holds its shape after these parts vertical stretchings if the coupling part between each parts has corner angle (band wedge angle) cross section.On the other hand, if the coupling part between each parts has basic arc-shaped cross-section, then this coupling part can be out of shape neatly, thereby the extensibility of excellence is provided for each parts.Therefore, by said structure, comprise that the perisporium 9 of scalable part 40 can stretch on steady and smooth ground.
With reference to Figure 10 A-10E according to a seventh embodiment of the invention marginal membrane is described below.Figure 10 A is the cross-sectional view of marginal membrane according to a seventh embodiment of the invention, and Figure 10 B-10E is respectively the cross-sectional view of another structure of the marginal membrane in the seventh embodiment of the present invention.Marginal membrane according to present embodiment has and the basic structure identical according to the marginal membrane of second embodiment.
Usually, when semiconductor wafer polishing, can between semiconductor wafer that keeps by apical ring and polished surface, produce frictional force.Therefore, marginal membrane may be along the distortion of its circumferencial direction, and marginal membrane is tending towards weakening with tight contact the between the semiconductor wafer thus.Therefore, in the marginal membrane shown in Figure 10 A-10E 7, be twisted for preventing marginal membrane, a part that is positioned at the perisporium 9 of scalable part 40 belows has the mechanical strength of enhancing.
Especially, Figure 10 A has shown that the part of a perisporium 9 that wherein is positioned at scalable part 40 belows is by the marginal membrane of making than contact portion 8 hard materials 7.The marginal membrane 7 that the part that Figure 10 B has shown a perisporium 9 that wherein is positioned at scalable part 40 belows is thicker than contact portion 8.Figure 10 C has shown a marginal membrane 7 that wherein is embedded in a hard component 96 harder than marginal membrane 7 in a part that is positioned at the perisporium 9 below the scalable part 40.Figure 10 D has shown a marginal membrane 7 of wherein having fixed a hard component 96 harder than marginal membrane 7 on a part that is positioned at the perisporium 9 below the scalable part 40.Figure 10 E has shown that part that wherein is positioned at the perisporium 9 of scalable part 40 belows has applied the marginal membrane 7 of a hard material 97 harder than marginal membrane 7.Hard component 96 preferably includes metal such as stainless steel or the resin with excellent rust-resisting property.Marginal membrane 7 with said structure can prevent when semiconductor wafer polishing along its circumferencial direction distortion, thereby make marginal membrane 7 keep tight the contact each other with semiconductor wafer W.
Below with reference to Figure 11 A and 11B the substrate holding apparatus according to the eighth embodiment of the present invention is described.Figure 11 A and 11B are the partial cross section views according to the substrate holding apparatus of the eighth embodiment of the present invention.Identical according to the structure of the substrate holding apparatus of the eighth embodiment of the present invention and details of operation with substrate holding apparatus according to the first embodiment of the present invention, will no longer be described below.
Shown in Figure 11 A, periphery wall 9a radially inwardly folds along its circumferencial direction near the contact portion 8a outside, thereby forms scalable part 40a.Scalable part 40a is positioned under the edge ring 4.Radial outside at periphery wall 9a (perisporium 9) has a guard block 190.Guard block 190 is used for preventing that marginal membrane 7 and snap ring 3 from contacting with each other.Protected location 190 be positioned on the outer circumferential edges of chuck 6 and with chuck 6 global formations.Perhaps, protected location 190 also can be used as one provides with chuck 6 separated components.By this structure, can prevent that marginal membrane 7 and snap ring 3 from contacting with each other, thereby allow chuck 6 vertical moving successfully.
Below the substrate holding apparatus according to the ninth embodiment of the present invention is described.Identical according to the structure of the substrate holding apparatus of the ninth embodiment of the present invention and details of operation with substrate holding apparatus according to the first embodiment of the present invention, will no longer be described below.
The outer contacting part 8a and the interior contact portion 8b that constitute contact portion 8 have a plurality of tiny projectioies and depression on the surface thereon.This projection and depression are preferably formed by for example roughened process (graining process).Thereby described roughened process is a process that makes surperficial roughening at surface of the work formation rule or irregular projection and depression.The structure that has described projection and depression on the upper surface by this 8a of contact portion outside and interior contact portion 8b, contact portion 8b adhering in can weakening to chuck 6.Therefore, when chuck 6 moves up, can prevent that the interior contact portion 8b of marginal membrane 7 from moving up with chuck 6.In addition, when compacting part 45 contacted with outer contacting part 8a described in second embodiment, compacting part 45 can disengage with outer contacting part 8a at an easy rate.In the present embodiment, have a plurality of tiny depressions and projection equally on the outer contacting part 8a of contact portion 8 and the lower surface of interior contact portion 8b, thereby semiconductor wafer can break away from marginal membrane 7 at an easy rate after substrate is polished.
In the above-described embodiments, fluid passage 32,33,34,35 provides with the passage that separates with 36.These fluid passages can be bonded to each other, and perhaps pressure chamber can be communicated with each other according to the position that is applied to the pressure size on the semiconductor wafer W and exerts pressure.Suitably combination each other of above-mentioned these embodiment.
In the above-described embodiments, polished surface is made of polishing pad.But polished surface is not limited in this structure.For example, polished surface can be made of fixed-abrasive.This fixed-abrasive forms a flat board that comprises by the fixing abrasive grain of binding agent.By fixed-abrasive, carry out polishing by the abrasive grain that produces from fixed-abrasive self.Fixed-abrasive comprises abrasive grain, binding agent and hole.For example, average grain diameter is 0.5 μ m or littler ceria (CeO
2) being used as abrasive grain, epoxy resin is used as binding agent.This fixed-abrasive constitutes harder polished surface.Fixed-abrasive comprises that has a double-deck fixed-abrasive pad, and described double-decker is made of attached to the elastic polished pad on the lower surface of described fixed-abrasive thin layer a fixed-abrasive thin layer and one.Aforesaid IC-1000 can be used to another kind of hard polished surface.
Below with reference to Figure 12 A-Figure 14 the substrate holding apparatus according to the tenth embodiment of the present invention is described.Figure 12 A is the cross-sectional view according to the part of the substrate holding apparatus of the tenth embodiment of the present invention, and Figure 12 B shows along the part of the observed substrate holding apparatus of direction shown in the arrow A among Figure 12 A.Figure 13 shows along the part of the observed intermediate coat of direction shown in the arrow B among Figure 12 A.Figure 14 is the perspective view that is combined in according to the air bag in the substrate holding apparatus of the tenth embodiment of the present invention.Identical according to the structure of the substrate holding apparatus of the tenth embodiment of the present invention and details of operation with substrate holding apparatus according to the first embodiment of the present invention, will no longer be described below.
Shown in Figure 13 and 14, nose 205a, 205b have a plurality of with the arc incision 210 on the circumferential edges that circumferentially equidistantly is formed at nose 205a, 205b, and each arc incision serves as one and breaks away from the promotion part.As shown in figure 13, otch 210 is formed in the respective regions 202c of middle contact portion 202.Zone 202c is along equidistant arrangement of circumferencial direction week of middle contact portion 202.Each regional 202c is made by the low material of other regional adhesive force that has contact portion 202 in the middle of the adhesive force comparison of semiconductor wafer W.Roughened is carried out by polishing method or shot-peening method in the surface that will contact with semiconductor wafer W of zone 202c, to form tiny depression and projection thereon.The whole lower surface of middle contact portion 202 all can be roughened processing.This roughened process is a process that forms tiny depression and projection at surface of the work.
Is that the operation that substrate holding apparatus discharges semiconductor wafer describes below with reference to Fig. 2 to the apical ring with said structure.After polishing is finished, stop to provide pressure fluid, and the pressure of pressure chamber 22,23,24 and 25 is reduced to atmospheric pressure to pressure chamber 22,23,24 and 25.Then, to pressure chamber 21 input pressure fluids, moving down chuck 6, thereby contact portion 8 (referring to Fig. 4) and middle contact portion 202 (referring to Figure 12 A) evenly closely contact with the upper surface generation of semiconductor wafer W.Under this state, production negative pressure in pressure chamber 23 or pressure chamber 24 is to be adsorbed onto semiconductor wafer W the lower end of apical ring 1 under vacuum.
Afterwards, apical ring 1 is moved horizontally to an apical ring 1 hanging position of on polishing block 100 (referring to Fig. 1) that dangles, chuck 6 is moved up thereby in pressure chamber 21, produce negative pressure then.Can when shifting to hanging position, apical ring 1 in pressure chamber 21, produce negative pressure.Thereafter, apical ring 1 is moved upwards up to one, and to be positioned at pusher be position on the substrate lowering or hoisting gear, i.e. delivering position.Then, stop by pressure chamber 23 or 24 pairs of pull of vacuum that semiconductor wafer W applies.
Subsequently, from the fluid passage 35 or fluid passage 34 spray fluid (for example mixture of pressure fluid or nitrogen and pure water) to semiconductor wafer W.Especially, when the semiconductor wafer W diameter was 300mm, fluid sprayed from fluid passage 35.When the semiconductor wafer W diameter was 200mm, fluid sprayed from fluid passage 34.When fluid was ejected on the semiconductor wafer W, the otch 210 and the groove 225 of middle contact portion 202 began to break away from from semiconductor wafer W, thus ambient gas feed pressure chamber 23.Therefore, the sealing attitude of the pressure chamber 23 that is made by middle contact portion 202 is destroyed, thereby makes that semiconductor wafer W can be smoothly and promptly break away from center sleeve 200.Contact portion 202, particularly nose 205a, 205b easily disengaged with semiconductor wafer W in the middle of otch 210 in the middle of being formed in the contact portion 202 can be allowed effectively.Therefore, can promptly discharge semiconductor wafer W from middle air bag 200.In the present embodiment, middle contact portion 202 has the regional 202c of radial width less than other zone, thereby otch 210 is provided.
In this embodiment, as mentioned above, middle contact portion 202 is partly by making the low material of the adhesive force of semiconductor wafer W, and middle contact portion 202 partly is roughened, to form tiny depression and projection on its lower surface.By this structure, semiconductor wafer W can successfully discharge from middle air bag 200.Preferably, in fluid passage 35 or fluid passage 34 ejections, between semiconductor wafer W and middle contact portion 202, provide fluid such as pure water at fluid.By this structure, semiconductor wafer W can more successfully discharge from middle air bag 200.
With reference to Figure 15 the substrate holding apparatus according to the 11st embodiment of the present invention is described below.Figure 15 is the rearview according to the elastomeric element of the substrate holding apparatus of the 11st embodiment of the present invention.According to the structure of the substrate holding apparatus of the 11st embodiment of the present invention and details of operation with according to of the present invention first identical with the substrate holding apparatus of the tenth embodiment, will no longer be described below.
As shown in figure 15, elastomeric element comprises that one is positioned at the marginal membrane 7 of circumferential area and the intermediate coat 201 of a radially inner side that is positioned at marginal membrane 7 farthest.The interior contact portion 8b of marginal membrane 7 has the otch 210 that is formed in its inner circumferential edge.The nose 205b of the nose 205a of contact portion 202a and interior middle contact portion 202b has the otch 210 that is formed on its circumferential edges respectively in the middle of outer.By this structure, when fluid from the fluid passage 35 or fluid passage 34 when providing (referring to Fig. 2), marginal membrane 7 and intermediate coat 201 can hightail from semiconductor wafer W.As mentioned above, when the diameter of semiconductor wafer W was 300mm, fluid is 35 ejections from the fluid passage, and when the diameter of semiconductor wafer W was 200mm, liquid is 34 ejections from the fluid passage.In fluid passage 35 or fluid passage 34 ejections, preferably providing fluid such as pure water between semiconductor wafer W and the contact portion 8 and between semiconductor wafer W and the middle contact portion 202 at liquid.
Describe below with reference to Figure 16-19 pair of substrate holding apparatus according to the 12nd embodiment of the present invention.Figure 16 is the rearview that is combined in according to first example of the elastomeric element in the substrate holding apparatus of the 12nd embodiment of the present invention.Figure 17 is the rearview that is combined in according to second example of the elastomeric element in the substrate holding apparatus of the 12nd embodiment of the present invention.Figure 18 is the rearview that is combined in according to the 3rd example of the elastomeric element in the substrate holding apparatus of the 12nd embodiment of the present invention.Figure 19 is the rearview that is combined in according to the 4th example of the elastomeric element in the substrate holding apparatus of the 12nd embodiment of the present invention.According to the structure of the substrate holding apparatus of the 12nd embodiment of the present invention and details of operation with according to of the present invention first identical with the substrate holding apparatus of the tenth embodiment, will no longer be described below.
Shown in Figure 16-19, elastomeric element comprises that one is positioned at the marginal membrane 7 of circumferential area and the intermediate coat 201 of a radially inner side that is positioned at marginal membrane 7 farthest.In first example of present embodiment shown in Figure 16, the contact portion 8 of marginal membrane 7 links to each other by a plurality of interconnecting parts 220 (each serves as and breaks away from the promotion part) each other with the middle contact portion 202 of intermediate coat 201.Especially, the nose 205a of the interior contact portion 8b of contact portion 8 and outer contacting part 202a is by interconnecting parts 220 interconnection.Interconnecting parts 220 radially extends from the circumferential edges of nose 205a, and equidistantly is provided with along the circumferencial direction of nose 205a.
In second example of present embodiment shown in Figure 17, the nose 205a of interior contact portion 8b and outer middle contact portion 202a integrally is connected to each other by a ring interconnect part 220 and is in the same place.By this structure, interior contact portion 8b, outer middle contact portion 202a and interconnecting parts 220 integrally form a single annular element.
In the 3rd example of present embodiment shown in Figure 180, interior contact portion 8b and nose 205a are connected to each other by a plurality of radial interconnect parts 220.Blank area between blank area between interconnecting parts 220 and the interior contact portion and interconnecting parts 220 and the nose 205a has respectively and is used to prevent that stress from concentrating on the fillet 230 on these blank areas.
In the 4th example of present embodiment shown in Figure 19, interior contact portion 8b and nose 205a are connected to each other to the interconnecting parts 220 of diagonally extending radially by a plurality of.
By the structure shown in Figure 16-19, the stretching of nose 205a is subjected to interconnecting parts 220 restrictions.Therefore, when moving down, semiconductor wafer W can prevent that nose 205a is stretched after disengaging.Therefore, when fluid from the fluid passage 35 or during the ejection of fluid passage 34, semiconductor wafer W can be that marginal membrane 7 and intermediate coat 201 break away from elastomeric element promptly.When the diameter of semiconductor wafer W was 300mm, fluid is 35 ejections from the fluid passage, and when the semiconductor wafer W diameter was 200mm, liquid is 34 ejections from the fluid passage.Preferably, providing fluid such as pure water between semiconductor wafer W and the contact portion 8 and between semiconductor wafer W and middle contact portion 202.The circumferential edges of interior contact portion 8b and nose 205a is that by the reason of interconnecting parts 220 interconnection experiment shows that the nose 205a of outer middle contact portion 202a must least be easy to break away from from semiconductor wafer W.
Various embodiment of the present invention described above.But the present invention is not limited in the foregoing description.Within the scope of technical conceive of the present invention, can make various modification.
According to the present invention, as mentioned above, but because scalable part is extended to follow the vertical moving parts downwards is moving upward of chuck, so the contact portion that keeps in touch with substrate can remain unchanged.Therefore, the contact area between elastomeric element and the substrate can remain unchanged, and can obtain uniform thrust thus on the whole surface of substrate.
But even be worn when causing distance between vertical moving parts and the substrate to change, because scalable part is stretched, with the variation of following distance at snap ring.Like this, the contact portion that contacts with substrate can hold its shape.Therefore, can in whole zone, all compress substrate with uniform pressure from substrate center to its circumferential edges.Therefore, the polishing rate that can obtain homogeneous on the whole surface of substrate promptly polishes profile.In addition, owing to scalable part is shunk according to the wearing and tearing of snap ring, so the snap ring of wearing and tearing still can use and needn't change.
In addition, according to the present invention, when fluid sprays to the upper surface of substrate, break away from the promotion part and begin to be removed, so that contact portion successfully breaks away from substrate from substrate.Therefore, substrate can be sent to substrate lowering or hoisting gear such as pusher and do not damaged by fluid pressure.Substrate can also successfully break away from from elastomeric element, and is not subjected to substrate type particularly to be formed at the influence of the kind of the film on the substrate back (upper surface).
Below with reference to accompanying drawings substrate holding apparatus and burnishing device according to the 13rd embodiment of the present invention are elaborated.
Figure 20 is the integrally-built cross-sectional view of a burnishing device, and wherein said burnishing device has the substrate holding apparatus according to the 13rd embodiment of the present invention.Structure according to the substrate holding apparatus of the 13 embodiment and burnishing device is identical with the substrate holding apparatus and the burnishing device of the first embodiment of the present invention with details of operation, will no longer be described below.
As shown in figure 20, the inside of apical ring driving shaft 11 is run through in fluid passage 332,333,334,335 and 336, and links to each other with pressure regulating unit 120 by a swivel joint 421 that is positioned at the top of apical ring driving shaft 11.
Below the apical ring 301 that serves as according to substrate holding apparatus of the present invention is described.Figure 21 is the vertical cross-section view according to the apical ring 1 of the 13 embodiment.
As shown in figure 21, apical ring body 2 and the whole snap ring 3 that remains on the apical ring body 2 limit a spatial accommodation therein.But in spatial accommodation, be furnished with annular retaining ring 5 and the disc chuck 6 that serves as the vertical moving parts.But vertical moving in the spatial accommodation of chuck 6 within being formed at apical ring body 2.Described vertical direction refers to the direction perpendicular to polished surface 101a.Apical ring body 2, chuck 6, seat ring 5 and add compressing tablet 13 and in apical ring body 2, limit a pressure chamber 321 jointly.As shown in figure 21, pressure chamber 321 communicates with the fluid passage 332 that comprises pipe, connector etc.Pressure chamber 321 links to each other with pressure regulating unit 120 by the adjuster R2 that is positioned on the fluid passage 332.
The first perisporium 309a is positioned at the outer circumferential edges place of contact portion 308.The second perisporium 309b be positioned at the first perisporium 309a radially inner side and with the first perisporium 309a at a distance of a preset distance.The 3rd perisporium 309c be positioned at the second perisporium 309b radially inner side and with the second perisporium 309b at a distance of a preset distance.Around the wall 309d be positioned at the 3rd perisporium 309c radially inner side and with the 3rd perisporium 309c at a distance of a preset distance.Wall 309d is provided with concentrically with respect to one another around the first perisporium 309a, the second perisporium 309b, the 3rd perisporium 309c and the.
The first perisporium 309a and the second perisporium 309b have the corresponding upper end that is clipped between chuck 6 and the ring edge ring 4.Wall 309d has the corresponding upper end that is clipped between chuck 6 and the annular holder 315 around the 3rd perisporium 309c and the.Edge ring 4 and support 315 remain on the chuck 6 by the bolt (not shown), so elastic membrane 307 is installed on the chuck 6 separably.
As adding compressing tablet 13, elastic membrane 307 is made by the high and durable elastomeric material of intensity such as ethylene propylene diene rubber (EPDM), polyurethane rubber, silicon rubber.The hardness of the elastomeric material of elastic membrane 307 (durometer hardness) is preferably 20-60.Elastic membrane 307 can have single perisporium, perhaps also can equally with present embodiment have a plurality of perisporiums.
At the back side of elastic membrane 307 is to define four pressure chamber 322,323,324 and 325 on the upper surface.Especially, contact portion 308, the first perisporium 309a, the second perisporium 309b and edge ring 4 limit an annular space that serves as pressure chamber 322.Pressure chamber 322 is communicated with the fluid passage 333 that comprises pipe, connector etc.Pressure chamber 322 links to each other with pressure regulating unit 120 by the adjuster R3 that is positioned on the fluid passage 333.
Be limited in pressure chamber 321 on the chuck 6 and pressure chamber 322,323,324 and 325 and be supplied to pressure fluid such as compressed air, perhaps, lead to by the fluid that links to each other with the relevant pressure chamber, 332,333,334,335 and 336 produce normal pressure or vacuum in pressure chamber 321,322,323,324 and 325.Especially, be separately positioned on the pressure that adjuster R2-R6 on fluid passage 332,333,334,335 and 336 can regulate the pressure fluid that offers relevant pressure chamber 321,322,323,324 and 325 respectively.Thus, controlled pressure chamber 321,322,323,324 and 325 pressure independently, or in pressure chamber 321,322,323,324 and 325, produce normal pressure or vacuum independently.
Pressure in each pressure chamber 322,323,324 and 325 is controlled independently according to one or more measured thickness of elcometer that are embedded in the thickness of the film on the polished surface that is used for measuring semiconductor wafer W in the polishing block 100.Elcometer can comprise the blooming analyzer that utilizes the interference of light or light reflection, or the vortex patern elcometer.According to the radial position analysis of semiconductor wafer W signal, with the internal pressures in each pressure chamber 322,323,324 and 325 that controls concentric setting from elcometer.
In this case, offer the pressure fluid of pressure chamber 322,323,324 and 325 or when producing atmospheric pressure therein the atmosphere of the above-mentioned pressure chamber that offers all can control temperature independently.By this structure, can directly control the temperature of workpiece such as semiconductor wafer from the back side of polished surface.Especially, when the temperature of each pressure chamber was controlled separately, the speed of chemical reaction can be controlled among this chemical polishing technology CMP.
According to the signal controlling from elcometer, its control mode is identical with the internal pressure control mode of above-mentioned each pressure chamber usually for temperature in the pressure chamber 322,323,324 and 325.
Below with reference to Figure 22 A and 22B the elastic membrane 307 according to present embodiment is elaborated.Figure 22 A shows the part according to the apical ring of the 13rd embodiment of the present invention, and Figure 22 B shows the state when wherein fluid is transfused to pressure chamber.For simplifying accompanying drawing, the structural detail except that elastic membrane is all just schematically illustrated in Figure 22 A and 22B.
Shown in Figure 22 A, the first perisporium 309a has one can be vertically promptly perpendicular to the flexible scalable part 340a of polished surface 101a.Scalable part 340a comprises a radially inwardly outstanding fold back portion.Scalable part 340a is positioned at the central area of the first perisporium 309a substantially, and scalable herein part 340a is to not influence of contact portion 308.The second perisporium 309b also has a scalable part 340b that can vertically stretch.Scalable part 340b comprises and extends radially outwardly and be positioned near horizontal component 340b-1 the lower end of the second perisporium 309b and the fold back portion 340b-2 that projects upwards from horizontal component 340b-1.Fold back portion 340b-2 promptly is parallel in the horizontal direction on the direction of polished surface 101a and can stretches.
The 3rd perisporium 309c has a scalable part 340c that can vertically stretch.Scalable part 340c comprises and extends radially inwardly and be positioned near horizontal component 340c-1 the lower end of the second perisporium 309c and the fold back portion 340c-2 that projects upwards from horizontal component 340c-1.Wall 309d also has a scalable part 340d that can vertically stretch around the.Scalable part 340d comprises and extends radially outwardly and be positioned near horizontal component 340d-1 the lower end of wall 309d around the and the fold back portion 340d-2 that projects upwards from horizontal component 340d-1.Fold back portion 340c-2 and fold back portion 340d-2 promptly are parallel in the horizontal direction on the direction of polished surface 101a and can stretch.
Because perisporium 309a, 309b, 309c and 309d have scalable part 340a, 340b, 340c and 340d respectively, perisporium 309a, 309b, 309c and 309d can stretch when contact portion 308 remains unchanged.Especially, perisporium 309a, 309b, 309c and the 309d that comprises corresponding scalable part 340a, 340b, 340c and 340d can evenly stretch in vertical direction.Therefore, shown in Figure 22 B, as pressure fluid input pressure chamber 322,323,324 and 325 when mentioning chuck 6 (referring to Figure 21), scalable part 340a, 340b, 340c and 340d stretch, to follow moving upward of chuck 6.Therefore, the contact area between elastic membrane 307 (contact portion 308) and the semiconductor wafer W can remain unchanged.
Below, the operation of apical ring 301 with said structure is elaborated.
In having the burnishing device of said structure, when semiconductor wafer W was admitted to burnishing device, apical ring 301 entirely was moved to the delivering position that transmits semiconductor wafer W.Diameter in semiconductor wafer W is under the situation of 200mm, and pressure regulating unit 120 is communicated with by fluid passage 334 with pressure chamber 323.On the other hand, be under the situation of 300mm at the diameter of semiconductor wafer W, pressure regulating unit 120 is communicated with by fluid passage 335 with pressure chamber 324.
The contact portion 308 that constitutes pressure chamber 323 and pressure chamber 324 has hole and groove (not shown) respectively, can directly be attracted by the lower end of apical ring 301 and keep by their semiconductor W.
Along with after semiconductor wafer W is drawn onto on the apical ring 301, apical ring entirely is moved to the position on the polishing block 100 with polished surface 101a.The outer circumferential edges of semiconductor wafer W is kept by snap ring 3, and semiconductor wafer W can not break away from from apical ring 301 thus, and perhaps semiconductor wafer W can not slided.
Afterwards, discharge the attraction of semiconductor wafer W.Approximately simultaneously, start the apical ring cylinder 111 that is connected on the apical ring driving shaft 11, be pressed against on the polished surface 101a of polishing block 100 with predetermined pressure with the snap ring 3 that will remain on apical ring 301 lower ends.Then, provide pressure fluid, moving down chuck 6, thereby the contact portion 308 of elastic membrane 307 is contacted with semiconductor wafer W to pressure chamber 321.Then, have separately that the pressure fluid of different pressures is transfused to pressure chamber 322,323,324 and 325 respectively, thereby chuck is moved upward, semiconductor wafer W is compressed against on the polished surface 101a of polishing block 100 simultaneously.At this moment, scalable part 340a, the 340b on the marginal membrane 7,340c and 340d stretch, to follow moving upward of chuck 6.Therefore, the contact area between lower surface of elastic membrane 307 (contact portion 308) and the semiconductor wafer W can remain unchanged.Then, polishing fluid supply nozzle 102 provided polishing fluid Q on polished surface 101a when, apical ring 301 and polishing block 100 rotated independently of one another.Polishing fluid Q is maintained on the polished surface 101a of polishing pad 101, and semiconductor wafer W is polished under the situation that has polishing fluid Q between its polished (descending) surface and the polishing pad 101.
In the present embodiment, even the pressure of pressure fluid is very little, pressure chamber 322,323,324 and 325 also can expand fully.Therefore, can compress semiconductor wafer W with very little pressure.When the semiconductor wafer with low k value material was polished as the intermediate layer insulator that is used for the Cu cross tie part, semiconductor wafer was polished and can not destroy described low k value material, and wherein this semiconductor wafer has low-k and soft.
By said structure, because the polishing of semiconductor wafer W keeps at snap ring 3 and polished surface 101a carrying out under the situation of sliding contact, so snap ring 3 wore and tore along with the time.Therefore, the lower surface of chuck 6 and the distance between the semiconductor wafer W diminish.In traditional substrate holding apparatus, when the distance between chuck and the semiconductor wafer diminished, the contact area between elastic membrane and the semiconductor wafer changed, and changed thereby cause polishing profile.According to present embodiment, even in this case, scalable part 340a, 340b, 340c and 340d will upwards shrink along with the wearing and tearing of snap ring 3, thereby make the contact area between semiconductor wafer W and the elastic membrane 307 (contact portion 308) to remain unchanged.Therefore, can prevent that polishing profile changes.
Though adopted the elastic membrane of global formation in the present embodiment, the present invention is not limited in this elastic membrane.Also can use elastic membrane with partitioned portion that a plurality of slits that are formed on the circumferential extension of contact portion separate.In this case, the contact area between semiconductor wafer and the elastic membrane 307 (contact portion 308) also can remain unchanged by above-mentioned scalable part is provided.Therefore, can on the whole polished surface of semiconductor wafer W, obtain uniform polishing rate.
The regional area that is positioned in the semiconductor wafer W under pressure chamber 322,323,324 and 325 is being compressed against on the polished surface 101a of polishing pad 101 under the pressure of the pressure fluid that offers pressure chamber 322,323,324 and 325.Therefore, the pressure that offers the pressure fluid of pressure chamber 322,323,324 and 325 is controlled independently of one another, thereby the whole surface of semiconductor wafer W can be pressed against on the polishing pad 101 with uniform thrust.Like this, can on the whole surface of semiconductor wafer W, obtain uniform polishing rate.Similarly, adjuster R2 regulates the pressure of the pressure fluid that offers pressure chamber 321, to change the pressure that is imposed on polishing pad 101 by snap ring 3.Like this, during polishing, impose on the pressure of polishing pad 101 and the pressure that semiconductor wafer W is pressed against on the polishing pad 101 is suitably regulated by snap ring 3, with the polishing profile of control semiconductor wafer W by being used for of applying of each pressure chamber 322,323,324 and 325.
As mentioned above, by apical ring cylinder 111 applied snap ring 3 is pressed against on the polishing pad 101 pressure and by each pressure chamber 322,323,324 of input and 325 pressure fluid applied is used for the pressure that semiconductor wafer W is pressed against on the polishing pad 101 is suitably regulated, so that semiconductor wafer W is polished.When the polishing of semiconductor wafer W is finished, stop to provide pressure fluid, and the pressure in pressure chamber 322,323,324 and 325 is dropped to atmospheric pressure to pressure chamber 322,323,324 and 325.Then, provide pressure fluid, moving down chuck 6, thereby make contact portion 308 tight the contact be taken place equably with the upper surface of semiconductor wafer W to pressure chamber 321.Under this state, semiconductor wafer W attracted to the lower end of apical ring 301 once more under vacuum.And then, in pressure chamber 321, produce atmospheric pressure or negative pressure immediately.This is because if pressure chamber 321 remains on high pressure, then semiconductor wafer W can be pressed against on the polished surface 101a partly by the lower surface of chuck 6.
After semiconductor wafer W is adsorbed in the above described manner, it is delivering position that apical ring 301 integrally moves to the position that semiconductor wafer W is transferred, and stops to pass the hole that is formed in pressure chamber 323 bottoms or the pressure chamber 324 or the pull of vacuum of groove (not shown).Then, the pressure fluid that input has predetermined pressure in the pressure chamber 322,323,324 and 325, wherein pressure fluid is ejected on the semiconductor wafer W by above-mentioned hole or groove, thereby discharges semiconductor wafer W.
The polishing fluid Q that is used for polishing of semiconductor wafers W is easy to flow into the external peripheral surface of elastic membrane 307 and the little clearance G between the snap ring 3.If polishing fluid Q is deposited on the external peripheral surface and snap ring 3 of elastic membrane 307 firmly, then can hinder support ring 5, chuck 6, elastic membrane 307 etc. with respect to apical ring body 2 and snap ring 3 vertical moving successfully.For avoiding this defective, import cleaning liquid such as pure water to annular cleaning liquid passage 51 by fluid passage 30.Like this, cleaning liquid is by the space of a plurality of intercommunicating pores 53 input clearance G tops, and the polishing fluid Q in the flush away clearance G firmly is deposited in the clearance G to prevent polishing fluid Q thus.Preferably, cleaning liquid provides after the semiconductor wafer W of polishing breaks away from, and till the polished semiconductor wafer of the next one is drawn onto on the apical ring 301.
Below with reference to Figure 23 A and 23B the apical ring that serves as according to the substrate holding apparatus of the 14th embodiment of the present invention is described.Figure 23 A shows the part according to the apical ring of the 14th embodiment of the present invention, and Figure 22 B shows the state when wherein fluid is transfused to pressure chamber.For simplifying accompanying drawing, the CONSTRUCTED SPECIFICATION except that elastic membrane is all just schematically illustrated in Figure 23 A and 23B.Identical according to the structure of the substrate holding apparatus of the 14th embodiment of the present invention and details of operation with substrate holding apparatus according to the 13rd embodiment of the present invention, will no longer be described below.
Shown in Figure 23 A, the second perisporium 309b has a scalable part 342b that can vertically stretch.Scalable part 342b comprises near two fold back portion 342b-1,342b-2 in lower end that are positioned at the second perisporium 309b.Fold back portion 342b-1 is radially inwardly outstanding, and fold back portion 342b-2 is radially outward outstanding.Have respectively too can vertical flexible scalable part 342c, 342d for wall 309d around the 3rd perisporium 309c and the.Scalable part 342c comprises near two fold back portion 342c-1,342c-2 in lower end that are positioned at the 3rd perisporium 309c.Fold back portion 342c-1 is radially outward outstanding, and fold back portion 342c-2 is radially inwardly outstanding.Scalable part 342d comprises near two fold back portion 342d-1,342d-2 the lower end that is positioned at wall 309d around the.Fold back portion 342d-1 is radially inwardly outstanding, and fold back portion 342d-2 is radially outward outstanding.
Because perisporium 309a, 309b, 309c and 309d have scalable part 340a, 342b, 342c and 342d respectively, perisporium 309a, 309b, 309c and 309d can stretch when contact portion 308 remains unchanged.Especially, perisporium 309a, 309b, 309c and the 309d that comprises corresponding scalable part 340a, 342b, 342c and 342d can stretch in vertical direction equably.Therefore, shown in Figure 23 B, as pressure fluid input pressure chamber 322,323,324 and 325 when moving up chuck 6 (referring to Figure 21), scalable part 340a, 340b, 340c and 342d stretch, to follow moving upward of chuck 6.Therefore, the contact area between elastic membrane 307 (contact portion 308) and the semiconductor wafer W can remain unchanged.
Below with reference to Figure 24 A and 24B the apical ring that serves as according to the substrate holding apparatus of the 15th embodiment of the present invention is described.Figure 24 A shows the part according to the apical ring of the 15th embodiment of the present invention, and Figure 24 B shows the state when wherein fluid is transfused to pressure chamber.For simplifying accompanying drawing, the CONSTRUCTED SPECIFICATION except that elastic membrane is all just schematically illustrated in Figure 24 A and 24B.Identical according to the structure of the substrate holding apparatus of the 15th embodiment of the present invention and details of operation with substrate holding apparatus according to the 13rd embodiment of the present invention, will no longer be described below.
Shown in Figure 24 A, the second perisporium 309b has a scalable part 343b that can vertically stretch.Scalable part 343b comprises and extends radially outwardly and be positioned near the horizontal component 343b-1 the lower end of the second perisporium 309b and integrally be connected fold back portion 343b-2 inner and that radially inwardly give prominence to from horizontal component 343b-1.Have respectively too can vertical flexible scalable part 343c, 342d for wall 309d around the 3rd perisporium 309c and the.Scalable part 343c comprises and extends radially outwardly and be positioned near the horizontal component 343c-1 the lower end of the 3rd perisporium 309c and integrally be connected from the outer end of horizontal component 343c-1 and the fold back portion 343c-2 that radially outward gives prominence to.Scalable part 343d comprises and extends radially outwardly and be positioned near the horizontal component 343d-1 the lower end of wall 309d around the and integrally be connected fold back portion 343d-2 inner and that radially inwardly give prominence to from horizontal component 343d-1.
Because perisporium 309a, 309b, 309c and 309d have scalable part 340a, 343b, 343c and 343d respectively, perisporium 309a, 309b, 309c and 309d can stretch when contact portion 308 remains unchanged.Especially, perisporium 309a, 309b, 309c and the 309d that comprises corresponding scalable part 340a, 343b, 343c and 343d can stretch in vertical direction equably.Therefore, shown in Figure 24 B, as pressure fluid input pressure chamber 322,323,324 and 325 when moving up chuck 6 (referring to Figure 21), scalable part 340a, 343b, 343c and 343d stretch, to follow moving upward of chuck 6.Therefore, the contact area between elastic membrane 307 (contact portion 308) and the semiconductor wafer W can remain unchanged.
Below with reference to Figure 25 A and 25B the apical ring that serves as according to the substrate holding apparatus of the 16th embodiment of the present invention is described.Figure 25 A shows the part according to the apical ring of the 16th embodiment of the present invention, and Figure 25 B shows the state when wherein fluid is transfused to pressure chamber.For simplifying accompanying drawing, the CONSTRUCTED SPECIFICATION except that elastic membrane is all just schematically illustrated in Figure 25 A and 25B.Identical according to the structure of the substrate holding apparatus of the 16th embodiment of the present invention and details of operation with substrate holding apparatus according to the 13rd embodiment of the present invention, will no longer be described below.
Shown in Figure 25 A, the second perisporium 309b has a scalable part 344b that can vertically stretch.Scalable part 344b comprises a radially outward outstanding fold back portion that also is positioned at the central area of the second perisporium 309b substantially.Have respectively too can vertical flexible scalable part 344c, 344d for wall 309d around the 3rd perisporium 309c and the.Scalable part 344c comprises a radially inwardly outstanding fold back portion that also is positioned at the central area of the 3rd perisporium 309c substantially.Scalable part 344d comprise one radially outward outstanding and be positioned at the fold back portion of the central area of wall 309d around the substantially.Because perisporium 309a, 309b, 309c and 309d have scalable part 340a, 344b, 344c and 344d respectively, perisporium 309a, 309b, 309c and 309d can stretch when contact portion 308 remains unchanged.Especially, perisporium 309a, 309b, 309c and the 309d that comprises corresponding scalable part 340a, 344b, 344c and 344d can stretch in vertical direction equably.Therefore, shown in Figure 25 B, as pressure fluid input pressure chamber 322,323,324 and 325 when moving up chuck 6 (referring to Figure 21), scalable part 340a, 344b, 344c and 344d stretch, to follow moving upward of chuck 6.Therefore, the contact area between elastic membrane 307 (contact portion 308) and the semiconductor wafer W can remain unchanged.
Below with reference to Figure 26 A and 26B the apical ring that serves as according to the substrate holding apparatus of the 17th embodiment of the present invention is described.Figure 26 A shows the part according to the apical ring of the 17th embodiment of the present invention, and Figure 26 B shows the state when wherein fluid is transfused to pressure chamber.For simplifying accompanying drawing, the CONSTRUCTED SPECIFICATION except that elastic membrane is all just schematically illustrated in Figure 26 A and 26B.Identical according to the structure of the substrate holding apparatus of the 17th embodiment of the present invention and details of operation with substrate holding apparatus according to the 13rd embodiment of the present invention, will no longer be described below.
Shown in Figure 26 A, the second perisporium 309b has a scalable part 345b that can vertically stretch.Scalable part 345b comprise extend radially outwardly and be positioned near the lower end of the second perisporium 309b horizontal component 345b-1 and to inwardly outstanding and be positioned at the fold back portion 345b-2 of the central area of the second perisporium 309b substantially.Have respectively too can vertical flexible scalable part 345c, 345d for wall 309d around the 3rd perisporium 309c and the.Scalable part 345c comprises near horizontal component 345c-1 and the radially outward outstanding fold back portion 345c-2 that also is positioned at the central area of the 3rd perisporium 309c substantially in lower end that extends radially inwardly and be positioned at the 3rd perisporium 309c.Scalable part 345d comprises and extends radially outwardly and be positioned near the horizontal component 345d-1 lower end of wall 309d around the and radially inwardly outstanding and be positioned at the fold back portion 345d-2 of the central area of wall 309d all around substantially.
Because perisporium 309a, 309b, 309c and 309d have scalable part 340a, 345b, 345c and 345d respectively, perisporium 309a, 309b, 309c and 309d can stretch when contact portion 308 remains unchanged.Especially, perisporium 309a, 309b, 309c and the 309d that comprises corresponding scalable part 340a, 345b, 345c and 345d can stretch in vertical direction equably.Therefore, shown in Figure 26 B, as pressure fluid input pressure chamber 322,323,324 and 325 when moving up chuck 6 (referring to Figure 21), scalable part 340a, 345b, 345c and 345d stretch, to follow moving upward of chuck 6.Therefore, the contact area between elastic membrane 307 (contact portion 308) and the semiconductor wafer W can remain unchanged.
Below with reference to Figure 27 A-27C the apical ring that serves as according to the substrate holding apparatus of the 18th embodiment of the present invention is described.Figure 27 A is the amplification partial sectional view according to the part of first example of the apical ring of the 18th embodiment of the present invention, Figure 27 B is the amplification partial sectional view according to the part of second example of the apical ring of the 18th embodiment of the present invention, and Figure 27 C is the amplification partial sectional view according to the part of the 3rd example of the apical ring of the 18th embodiment of the present invention.Identical according to the structure of the substrate holding apparatus of the 18th embodiment of the present invention and details of operation with substrate holding apparatus according to the 13rd embodiment of the present invention, will no longer be described below.
Shown in Figure 27 A, form an acclivitous sloping portion 308a in the outer circumferential edges of the contact portion 308 of elastic membrane 307.Sloping portion 308a has crooked cross section.By this structure, even provide pressure fluid to mention chuck 6 to pressure chamber 322,323, the contact portion 308 of elastic membrane 307 and the outer circumferential edges of semiconductor wafer W can not contact each other yet.Therefore, elastic membrane 307 is not exerted pressure to the outer circumferential edges of semiconductor wafer W.Like this, can prevent that wherein the outer circumferential edges of semiconductor wafer W is taken place by the what is called of excessive polishing " corner cavetto ".
Preferably, the space between sloping portion 308a and the semiconductor wafer W should be as far as possible little, because polishing fluid is easy to stay in this space.Therefore, preferably, the vertical dimension of sloping portion 308a is less than its horizontal size.In the present embodiment, the second perisporium 309b has a scalable part 346b.Scalable part 346b comprises near the horizontal component in lower end of the second perisporium 309b that extends radially outwardly and be positioned at.The second perisporium 309b can also have a fold back portion shown in the 13 to the 17 embodiment.
Second example shown in Figure 27 B is being different from first example shown in Figure 27 A aspect the position of the second perisporium 309b.Especially, the lower end of the second perisporium 309b is near the first perisporium 309a, and sloping portion 308a extends upward from the lower end of the second perisporium 309b.Therefore, the pressure in the pressure chamber 323 can be applied to the zone of the radially inner side of the outer circumferential edges that is positioned at semiconductor wafer W in the semiconductor wafer W.
The 3rd example shown in Figure 27 C is being different from first example shown in Figure 27 A aspect the thickness of sloping portion 308a.Especially, in the 3rd example, sloping portion 308a is thinner than the horizontal component of contact portion 308.Therefore, when pressure fluid offered pressure chamber 322, sloping portion 308a can expand at an easy rate, only the outer circumferential edges of semiconductor wafer W is pressed against on the polished surface 101a (referring to Fig. 1) under the pressure of expectation.Like this, can independently control the polishing rate at the outer circumferential edges place of semiconductor wafer W.
Below with reference to Figure 28 A-28C the apical ring that serves as according to the substrate holding apparatus of the 19th embodiment of the present invention is described.Figure 28 A is the amplification partial sectional view according to the part of first example of the apical ring of the 19th embodiment of the present invention, Figure 28 B is the amplification partial sectional view according to the part of second example of the apical ring of the 19th embodiment of the present invention, and Figure 28 C is the amplification partial sectional view according to the part of the 3rd example of the apical ring of the 19th embodiment of the present invention.According to the CONSTRUCTED SPECIFICATION of the substrate holding apparatus of the 19th embodiment of the present invention with preferably with according to the of the present invention the 13 identical with the substrate holding apparatus of the 18 embodiment, will no longer be described below.
Shown in Figure 28 A, in the outer circumferential edges of the contact portion 308 of elastic membrane 307, form an acclivitous sloping portion 308b.Sloping portion 308b has straight cross section.By this structure, even provide pressure fluid to mention chuck 6 to pressure chamber 322,323, the contact portion 308 of elastic membrane 307 and the outer circumferential edges of semiconductor wafer W can not contact each other yet.For dwindling the space between sloping portion 308b and the semiconductor wafer W, preferably, the vertical dimension of sloping portion 308b is less than its horizontal size.
The lower end of the second perisporium 309b shown in Figure 28 B is near the first perisporium 309a.Sloping portion 308b extends upward from the lower end of the second perisporium 309b.Therefore, the pressure that produce in the pressure chamber 323 can be applied on the zone of radially inner side of the outer circumferential edges that is positioned at semiconductor wafer W in the semiconductor wafer W.
In the 3rd example shown in Figure 28 C, sloping portion 308b is thinner than the horizontal component of contact portion 308.Therefore, when pressure fluid offered pressure chamber 322, sloping portion 308b can expand at an easy rate, only the outer circumferential edges of semiconductor wafer W is pressed against on the polished surface 101a (referring to Fig. 1) under the pressure of expectation.Like this, can independently control the polishing rate at the outer circumferential edges place of semiconductor wafer W.
During polishing, the lower end of snap ring 3 is because the wearing and tearing gradually with the sliding contact of polished surface 101a.Therefore, the distance between chuck 6 and the semiconductor wafer W diminishes, and the contact area between elastic membrane 307 and the semiconductor wafer W is changed thus.Therefore, polishing rate is tending towards being changed partly.For avoiding this problem to take place, preferably, scalable part 340a-340d, 341b-341d, 342b-342d, 343b-343d, 344b-344d, 345b-345d, 346b are scalable in the degree greater than the wear extent of snap ring 3.Thus, scalable part can upwards be shunk when snap ring 3 wearing and tearing, therefore can prevent that polishing rate from being changed partly.
According to the present invention, as mentioned above, because scalable part stretches perpendicular to polished surface when fluid is provided for pressure chamber, so the shape of the contact portion of elastic membrane can remain unchanged.Therefore, the contact area between elastic membrane (contact portion) and the substrate can remain unchanged, and can obtain uniform polishing rate thus on the whole polished surface of substrate.Scalable part can make elastic membrane and substrate keep each other fully contacting effectively.Therefore, can use the elastic membrane of high rigidity, make the durability of elastic membrane be improved thus.In this case, compare with the elastic membrane of soft, the elastic membrane of high rigidity can be kept the contact area between substrate and the elastic membrane (contact portion).Can obtain stable polishing rate thus.
Industrial applicibility
The present invention is applicable to keep polished substrate and this substrate is pressed against substrate holding apparatus on the polished surface, particularly is applicable to be used for keeping in the burnishing device that described substrate is polished to smooth light face the substrate holding apparatus of substrate, for example semiconductor wafer. The present invention also is applicable to have the burnishing device of this substrate holding apparatus.
Claims (35)
1. one kind is used for polished substrate kept and is pressed against substrate holding apparatus on the polished surface, and described substrate holding apparatus comprises:
But vertical moving parts; And
But one links to each other to be used to limit the elastomeric element of a chamber with described vertical moving parts;
But described elastomeric element comprises a contact portion that contacts with described substrate and a perisporium that extends upward and link to each other with described vertical moving parts from described contact portion, but described perisporium has the scalable part of a vertical stretching and contraction.
2. substrate holding apparatus according to claim 1 is characterized in that:
Described perisporium comprises a periphery wall and an internal perisporium that is positioned at the radially inner side of described periphery wall;
In described periphery wall and the described internal perisporium at least one has described scalable part; And
The position of described contact portion between described periphery wall and described internal perisporium is separated.
3. substrate holding apparatus according to claim 1 and 2 is characterized in that, described perisporium has a folded part, to form described scalable part.
4. substrate holding apparatus according to claim 3 is characterized in that described folded part has curved substantially cross section.
5. substrate holding apparatus according to claim 1 and 2 is characterized in that, described scalable part is made by the material softer than described contact portion.
6. substrate holding apparatus according to claim 1 and 2 is characterized in that, a predetermined portions of described perisporium is thinner than described contact portion, to form described scalable part.
7. according to any one described substrate holding apparatus among the claim 1-6, it is characterized in that described perisporium has a part of being made by the material harder than described contact portion and being positioned under the described scalable part.
8. according to any one described substrate holding apparatus among the claim 1-6, it is characterized in that described perisporium has one by thicker than described contact portion and be positioned at part under the described scalable part.
9. according to any one described substrate holding apparatus among the claim 1-6, it is characterized in that a hard component harder than described elastomeric element is embedded in the described perisporium, and described hard component is positioned under the described scalable part.
10. according to any one described substrate holding apparatus among the claim 1-6, it is characterized in that a hard component harder than described elastomeric element is fixed on the described perisporium, and described hard component is positioned under the described scalable part.
11., it is characterized in that described perisporium has the part that a surface scribbles the hard material harder than described elastomeric element according to any one described substrate holding apparatus among the claim 1-6, and described part is positioned under the described scalable part.
12. one kind is used for polished substrate kept and is pressed against substrate holding apparatus on the polished surface, described substrate holding apparatus comprises:
But vertical moving parts; And
But one links to each other to limit the elastomeric element of a chamber with described vertical moving parts;
But described elastomeric element comprises a contact portion that contacts with described substrate and a perisporium that extends upward and link to each other with described vertical moving parts from described contact portion, described perisporium comprises a periphery wall and an internal perisporium that is positioned at the radially inner side of described periphery wall, and described contact portion is separated in the position between described periphery wall and described internal perisporium.
13. according to any one described substrate holding apparatus among the claim 1-12, it is characterized in that, thereby comprise that also one contacts with the upper surface of described contact portion described contact portion is pressed against compacting part on the described substrate.
14. substrate holding apparatus according to claim 13 is characterized in that, described compacting part has a plurality of grooves that are formed on its lower surface and radially extend.
15. substrate holding apparatus according to claim 13 is characterized in that, described compacting part has one and is formed on its lower surface to be used for providing to the upper surface of described contact portion the fluid supply port of fluid.
16., it is characterized in that described contact portion has on the surface formed thereon and along the thick portion of the circumferential extension of described contact portion according to any one described substrate holding apparatus among the claim 13-15.
17. substrate holding apparatus according to claim 16 is characterized in that, described thick portion has and is substantially triangular in shape or the cross section of arc.
18., it is characterized in that a reinforcing member is embedded in the described contact portion according to any one described substrate holding apparatus among the claim 13-17.
19., it is characterized in that described contact portion has a plurality of lip-deep projectioies formed thereon and depression according to any one described substrate holding apparatus among the claim 1-18.
20. a burnishing device comprises:
According to any one described substrate holding apparatus among the claim 1-19; And
Polishing block with polished surface.
21. the method for a polished substrate comprises:
By keeping this substrate according to any one described substrate holding apparatus among the claim 1-19;
This substrate is placed on the polished surface of a polishing block;
But move down described vertical moving parts, so that described contact portion is pressed against on this substrate;
When being pressed against described contact portion on this substrate, in described chamber, provide pressure fluid;
Make this substrate and described polished surface sliding contact, to polish this substrate.
22. one kind is used for polished substrate kept and is pressed against substrate holding apparatus on the polished surface, described substrate holding apparatus comprises:
But vertical moving parts; And
An elastomeric element that is used to limit a chamber;
Described elastomeric element has a contact portion that contacts with described substrate, and described contact portion has one and is used to promote that described contact portion promotes part from the disengaging that described substrate breaks away from.
23. substrate holding apparatus according to claim 22 is characterized in that, described disengaging promotes part to comprise an otch on the circumferential edges that is formed at described contact portion.
24., it is characterized in that described contact portion has a zone of being made by the low material of adhesive force of the adhesive force of described substrate being compared described elastomeric element according to claim 22 or 23 described substrate holding apparatus.
25., it is characterized in that a surface of described contact portion has a plurality of projectioies and depression according to any one described substrate holding apparatus among the claim 22-24.
26. substrate holding apparatus according to claim 22, it is characterized in that, described elastomeric element comprises a plurality of contact portions, and described disengaging promotes part to comprise and another interconnective interconnecting parts that is used for making described a plurality of contact portions.
27. substrate holding apparatus according to claim 22 is characterized in that, described disengaging promote part comprise one be formed in the described contact portion to the groove that is recessed on, and
When pressure fluid was imported in the described chamber, described groove closely contacted with described substrate.
28. a burnishing device comprises:
According to any one described substrate holding apparatus among the claim 22-27; And
Polishing block with polished surface.
29. one kind is used for polished substrate kept and is pressed against substrate holding apparatus on the polished surface, described substrate holding apparatus comprises:
The movable member that can move perpendicular to described polished surface; And
One links to each other to be used to limit the elastic membrane of a plurality of chambers with described movable member;
Described elastic membrane comprises a contact portion that contacts with described substrate and a plurality of perisporiums that described contact portion is linked to each other with described movable member of being used for, and each in described a plurality of perisporiums has a scalable part that can stretch and shrink perpendicular to described polished surface.
30. substrate holding apparatus according to claim 29 is characterized in that, described elastic membrane has overall structure.
31., it is characterized in that described contact portion has one and is positioned on its outer rim and acclivitous sloping portion according to claim 29 or 30 described substrate holding apparatus.
32. substrate holding apparatus according to claim 31 is characterized in that, described sloping portion has crooked cross section.
33., it is characterized in that described sloping portion has straight cross section according to claim 22 or 23 described substrate holding apparatus.
34., it is characterized in that described sloping portion is thinner than described contact portion according to any one described substrate holding apparatus among the claim 31-33.
35. a burnishing device comprises:
According to any one described substrate holding apparatus among the claim 29-34; And
Polishing block with polished surface.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003033015 | 2003-02-10 | ||
| JP033015/2003 | 2003-02-10 | ||
| JP163051/2003 | 2003-06-06 | ||
| JP163052/2003 | 2003-06-06 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910003370XA Division CN101474771B (en) | 2003-02-10 | 2004-02-04 | Substrate holding flexible assembly, substrate polishing apparatus and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1748293A true CN1748293A (en) | 2006-03-15 |
| CN100468643C CN100468643C (en) | 2009-03-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004800038978A Expired - Lifetime CN100468643C (en) | 2003-02-10 | 2004-02-04 | Substrate holding apparatus and polishing apparatus |
| CN200910003370XA Expired - Lifetime CN101474771B (en) | 2003-02-10 | 2004-02-04 | Substrate holding flexible assembly, substrate polishing apparatus and method |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910003370XA Expired - Lifetime CN101474771B (en) | 2003-02-10 | 2004-02-04 | Substrate holding flexible assembly, substrate polishing apparatus and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN100468643C (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102227803A (en) * | 2009-05-14 | 2011-10-26 | 应用材料股份有限公司 | Polishing head zone boundary smoothing |
| CN102729142A (en) * | 2011-04-13 | 2012-10-17 | 南亚科技股份有限公司 | Membrane |
| TWI495541B (en) * | 2012-12-28 | 2015-08-11 | ||
| CN107932254A (en) * | 2017-11-01 | 2018-04-20 | 福建晶安光电有限公司 | A kind of method of ultra-thin wafers planarization processing clamping |
| CN110574145A (en) * | 2017-02-01 | 2019-12-13 | 姜准模 | Carrier head for a chemical mechanical polishing apparatus including contact fins |
| CN111168562A (en) * | 2018-11-09 | 2020-05-19 | 凯斯科技股份有限公司 | Bearing head for grinding device and diaphragm thereof |
| CN112621560A (en) * | 2015-05-29 | 2021-04-09 | 应用材料公司 | Retaining ring with features on the inner surface |
| US11682561B2 (en) | 2014-04-22 | 2023-06-20 | Applied Materials, Inc. | Retaining ring having inner surfaces with facets |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11305397B2 (en) * | 2018-06-18 | 2022-04-19 | Seagate Technology Llc | Lapping system that includes a lapping plate temperature control system, and related methods |
| CN112091817B (en) * | 2020-09-08 | 2022-06-17 | 中国航发贵州黎阳航空动力有限公司 | Thin wall annular part terminal surface grinding tool |
| WO2022187249A1 (en) * | 2021-03-04 | 2022-09-09 | Applied Materials, Inc. | Polishing carrier head with floating edge control |
-
2004
- 2004-02-04 CN CNB2004800038978A patent/CN100468643C/en not_active Expired - Lifetime
- 2004-02-04 CN CN200910003370XA patent/CN101474771B/en not_active Expired - Lifetime
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102227803A (en) * | 2009-05-14 | 2011-10-26 | 应用材料股份有限公司 | Polishing head zone boundary smoothing |
| CN102227803B (en) * | 2009-05-14 | 2014-09-17 | 应用材料公司 | Polishing head zone boundary smoothing |
| US9050699B2 (en) | 2009-05-14 | 2015-06-09 | Applied Materials, Inc. | Polishing head zone boundary smoothing |
| CN102729142A (en) * | 2011-04-13 | 2012-10-17 | 南亚科技股份有限公司 | Membrane |
| TWI495541B (en) * | 2012-12-28 | 2015-08-11 | ||
| US11682561B2 (en) | 2014-04-22 | 2023-06-20 | Applied Materials, Inc. | Retaining ring having inner surfaces with facets |
| CN112621560A (en) * | 2015-05-29 | 2021-04-09 | 应用材料公司 | Retaining ring with features on the inner surface |
| US11453099B2 (en) | 2015-05-29 | 2022-09-27 | Applied Materials, Inc. | Retaining ring having inner surfaces with features |
| CN110574145A (en) * | 2017-02-01 | 2019-12-13 | 姜准模 | Carrier head for a chemical mechanical polishing apparatus including contact fins |
| CN110574145B (en) * | 2017-02-01 | 2023-08-15 | 姜准模 | Carrier head for a chemical mechanical polishing apparatus comprising contact tabs |
| CN107932254A (en) * | 2017-11-01 | 2018-04-20 | 福建晶安光电有限公司 | A kind of method of ultra-thin wafers planarization processing clamping |
| CN111168562A (en) * | 2018-11-09 | 2020-05-19 | 凯斯科技股份有限公司 | Bearing head for grinding device and diaphragm thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101474771A (en) | 2009-07-08 |
| CN101474771B (en) | 2012-07-11 |
| CN100468643C (en) | 2009-03-11 |
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