CN1400665A - 互补金属氧化物半导体图像传感器 - Google Patents
互补金属氧化物半导体图像传感器 Download PDFInfo
- Publication number
- CN1400665A CN1400665A CN02142909A CN02142909A CN1400665A CN 1400665 A CN1400665 A CN 1400665A CN 02142909 A CN02142909 A CN 02142909A CN 02142909 A CN02142909 A CN 02142909A CN 1400665 A CN1400665 A CN 1400665A
- Authority
- CN
- China
- Prior art keywords
- grid
- electric charge
- charge storage
- cmos image
- photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000295 complement effect Effects 0.000 title description 2
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 230000008676 import Effects 0.000 claims description 2
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 claims 1
- 230000003472 neutralizing effect Effects 0.000 claims 1
- 230000008901 benefit Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR43140/01 | 2001-07-18 | ||
KR43140/2001 | 2001-07-18 | ||
KR10-2001-0043140A KR100504562B1 (ko) | 2001-07-18 | 2001-07-18 | 씨모스 이미지 센서 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1400665A true CN1400665A (zh) | 2003-03-05 |
CN1258228C CN1258228C (zh) | 2006-05-31 |
Family
ID=19712257
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB02142909XA Expired - Fee Related CN1258228C (zh) | 2001-07-18 | 2002-07-18 | 互补金属氧化物半导体图像传感器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6809309B2 (zh) |
JP (1) | JP4472236B2 (zh) |
KR (1) | KR100504562B1 (zh) |
CN (1) | CN1258228C (zh) |
TW (1) | TW552719B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100426514C (zh) * | 2004-11-09 | 2008-10-15 | 东部亚南半导体株式会社 | Cmos图像传感器及其制造方法 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7253392B2 (en) * | 2003-09-08 | 2007-08-07 | Micron Technology, Inc. | Image sensor with photo diode gate |
US7420233B2 (en) * | 2003-10-22 | 2008-09-02 | Micron Technology, Inc. | Photodiode for improved transfer gate leakage |
JP4359539B2 (ja) * | 2004-07-02 | 2009-11-04 | 富士通マイクロエレクトロニクス株式会社 | 固体撮像装置および固体撮像装置の制御方法 |
KR100630704B1 (ko) * | 2004-10-20 | 2006-10-02 | 삼성전자주식회사 | 비평면 구조의 트랜지스터를 구비한 cmos 이미지 센서및 그 제조 방법 |
KR100755970B1 (ko) | 2004-11-25 | 2007-09-06 | 삼성전자주식회사 | 씨모스 이미지 센서 |
JP4416668B2 (ja) * | 2005-01-14 | 2010-02-17 | キヤノン株式会社 | 固体撮像装置、その制御方法及びカメラ |
US7847847B2 (en) * | 2005-01-27 | 2010-12-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure for CMOS image sensor with a plurality of capacitors |
JP4878123B2 (ja) * | 2005-02-07 | 2012-02-15 | 浜松ホトニクス株式会社 | 固体撮像装置 |
US7446357B2 (en) * | 2005-05-11 | 2008-11-04 | Micron Technology, Inc. | Split trunk pixel layout |
KR100787938B1 (ko) * | 2005-07-15 | 2007-12-24 | 삼성전자주식회사 | 공유 능동 화소 센서 구조의 씨모스 이미지 센서 및 그구동 방법 |
JP4669768B2 (ja) * | 2005-09-30 | 2011-04-13 | 富士フイルム株式会社 | 解像度可変型x線撮像装置及びx線ct装置 |
KR100772892B1 (ko) | 2006-01-13 | 2007-11-05 | 삼성전자주식회사 | 플로팅 확산 영역의 커패시턴스를 제어할 수 있는 공유픽셀형 이미지 센서 |
US20070272828A1 (en) * | 2006-05-24 | 2007-11-29 | Micron Technology, Inc. | Method and apparatus providing dark current reduction in an active pixel sensor |
US8053287B2 (en) | 2006-09-29 | 2011-11-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for making multi-step photodiode junction structure for backside illuminated sensor |
KR100843016B1 (ko) | 2007-03-14 | 2008-07-01 | 주식회사 하이닉스반도체 | 반도체 소자의 액티브 구조 |
FR2961347B1 (fr) | 2010-06-15 | 2012-08-24 | E2V Semiconductors | Capteur d'image a multiplication d'electrons |
WO2018155297A1 (ja) * | 2017-02-27 | 2018-08-30 | パナソニックIpマネジメント株式会社 | 固体撮像装置 |
CN112565642B (zh) * | 2020-11-27 | 2023-07-04 | 上海华力微电子有限公司 | 一种具有线性对数输出的cis传感器 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62160759A (ja) * | 1986-01-10 | 1987-07-16 | Fujitsu Ltd | 光電変換装置 |
JPS63318153A (ja) * | 1987-06-19 | 1988-12-27 | Fujitsu Ltd | 半導体装置 |
GB9308543D0 (en) * | 1993-04-24 | 1993-06-09 | Philips Electronics Uk Ltd | An image sensor |
JPH10173164A (ja) * | 1996-12-12 | 1998-06-26 | Sony Corp | 固体撮像素子 |
JP3915161B2 (ja) * | 1997-03-04 | 2007-05-16 | ソニー株式会社 | ブルーミング防止構造を備えた固体撮像素子のダイナミックレンジ拡大方法とその固体撮像素子 |
US6369853B1 (en) * | 1997-11-13 | 2002-04-09 | Foveon, Inc. | Intra-pixel frame storage element, array, and electronic shutter method suitable for electronic still camera applications |
US6512544B1 (en) * | 1998-06-17 | 2003-01-28 | Foveon, Inc. | Storage pixel sensor and array with compression |
JP4081188B2 (ja) * | 1998-09-16 | 2008-04-23 | オリンパス株式会社 | 増幅型固体撮像素子を用いた撮像装置 |
JP2000174247A (ja) * | 1998-12-09 | 2000-06-23 | Fuji Xerox Co Ltd | 固体撮像素子 |
JP2000253316A (ja) * | 1999-03-02 | 2000-09-14 | Kawasaki Steel Corp | Cmosイメージセンサ |
-
2001
- 2001-07-18 KR KR10-2001-0043140A patent/KR100504562B1/ko not_active IP Right Cessation
-
2002
- 2002-07-17 JP JP2002208019A patent/JP4472236B2/ja not_active Expired - Fee Related
- 2002-07-18 CN CNB02142909XA patent/CN1258228C/zh not_active Expired - Fee Related
- 2002-07-18 TW TW091116015A patent/TW552719B/zh not_active IP Right Cessation
- 2002-07-18 US US10/197,491 patent/US6809309B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100426514C (zh) * | 2004-11-09 | 2008-10-15 | 东部亚南半导体株式会社 | Cmos图像传感器及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US6809309B2 (en) | 2004-10-26 |
TW552719B (en) | 2003-09-11 |
KR100504562B1 (ko) | 2005-08-03 |
JP4472236B2 (ja) | 2010-06-02 |
CN1258228C (zh) | 2006-05-31 |
US20030015738A1 (en) | 2003-01-23 |
JP2003142675A (ja) | 2003-05-16 |
KR20030008481A (ko) | 2003-01-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1258228C (zh) | 互补金属氧化物半导体图像传感器 | |
JP7322239B2 (ja) | 撮像装置および電子機器 | |
US10217781B2 (en) | One transistor active pixel sensor with tunnel FET | |
CN104253952B (zh) | 固态成像装置及其驱动方法以及电子设备 | |
JP3932399B2 (ja) | パンチスルー電圧とフォトダイオードの集電量を増加させることのできるcmosイメージセンサ及びその製造方法 | |
JP7365601B2 (ja) | 光検出器 | |
CN100561743C (zh) | 具有非凸面光电二极管的图像传感器及像素 | |
CN1652344A (zh) | N-型衬底上的图像传感器 | |
US20160086984A1 (en) | Approach for Reducing Pixel Pitch using Vertical Transfer Gates and Implant Isolation Regions | |
US20100140733A1 (en) | Back-side illuminated image sensor | |
KR100820520B1 (ko) | 고체촬상장치 | |
CN1674295A (zh) | 固态成像器件 | |
KR101818587B1 (ko) | 광감지 장치의 단위 픽셀, 광감지 장치 및 이를 이용한 거리 측정 방법 | |
WO2011058683A1 (ja) | 固体撮像装置 | |
JP2002134729A (ja) | 固体撮像装置及びその駆動方法 | |
CN1885913A (zh) | Cmos图像传感器的图像像素 | |
CN1893541A (zh) | 包括有源像素传感器阵列的图像传感器及具有其的系统 | |
CN1885551A (zh) | 半导体集成电路器件及其制备方法 | |
CN1992316A (zh) | Cmos图像传感器 | |
CN110050345A (zh) | 固态图像拾取元件和电子装置 | |
CN1627802A (zh) | 放大固态图像拾取设备及其驱动方法 | |
JP4130307B2 (ja) | 固体撮像装置 | |
CN1941397A (zh) | 固态成像器件及其驱动方法 | |
CN206388705U (zh) | 成像像素和具有成像像素阵列的图像传感器 | |
US20220201234A1 (en) | Imaging device, operation method thereof, and electronic device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: MAGNACHIP CO., LTD. Free format text: FORMER OWNER: HYNIX SEMICONDUCTOR INC. Effective date: 20070601 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20070601 Address after: North Chungcheong Province Patentee after: Magnachip Semiconductor Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Hairyoksa Semiconductor Co., Ltd. |
|
ASS | Succession or assignment of patent right |
Owner name: KONO SCIENCE CO., LTD. Free format text: FORMER OWNER: MAGNACHIP CO., LTD. Effective date: 20090710 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20090710 Address after: Delaware Patentee after: Magnachip Semiconductor Ltd. Address before: North Chungcheong Province Patentee before: Magnachip Semiconductor Ltd. |
|
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20060531 Termination date: 20130718 |