CN1344335A - 生长处理中控制硅晶体直径的方法与装置 - Google Patents

生长处理中控制硅晶体直径的方法与装置 Download PDF

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Publication number
CN1344335A
CN1344335A CN00805352A CN00805352A CN1344335A CN 1344335 A CN1344335 A CN 1344335A CN 00805352 A CN00805352 A CN 00805352A CN 00805352 A CN00805352 A CN 00805352A CN 1344335 A CN1344335 A CN 1344335A
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China
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temperature
crystal
melt
power
point
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Pending
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CN00805352A
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English (en)
Chinese (zh)
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罗伯特·H·福尔霍夫
斯蒂芬·L·基伯尔
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SunEdison Inc
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SunEdison Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
CN00805352A 1999-03-22 2000-02-17 生长处理中控制硅晶体直径的方法与装置 Pending CN1344335A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12545699P 1999-03-22 1999-03-22
US60/125,456 1999-03-22
US09/502,340 US6776840B1 (en) 1999-03-22 2000-02-10 Method and apparatus for controlling diameter of a silicon crystal in a locked seed lift growth process
US09/502,340 2000-02-10

Publications (1)

Publication Number Publication Date
CN1344335A true CN1344335A (zh) 2002-04-10

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CN00805352A Pending CN1344335A (zh) 1999-03-22 2000-02-17 生长处理中控制硅晶体直径的方法与装置

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US (1) US6776840B1 (ja)
EP (1) EP1171652B1 (ja)
JP (1) JP4602561B2 (ja)
KR (1) KR100690218B1 (ja)
CN (1) CN1344335A (ja)
DE (1) DE60001274T2 (ja)
TW (1) TW552324B (ja)
WO (1) WO2000056956A1 (ja)

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CN100371507C (zh) * 2005-03-28 2008-02-27 荀建华 晶体等径生长的控制系统及其方法
CN100383295C (zh) * 2006-03-31 2008-04-23 浙江大学 直拉式晶体生长炉自动控制方法
CN102134741A (zh) * 2009-12-02 2011-07-27 硅电子股份公司 用于拉伸具有直径保持不变的区段的硅单晶的方法
CN102758250A (zh) * 2012-07-20 2012-10-31 西安理工晶体科技有限公司 锗单晶直拉生长法的自动等径控制方法
CN101748477B (zh) * 2008-12-19 2013-10-23 北京太克易航科贸有限公司 用于单晶硅生长过程控制的智能pid控制方法及其系统
CN103834991A (zh) * 2014-03-10 2014-06-04 马鞍山明鑫电气科技有限公司 无温度信号处理开环式功率自控晶体生长控制方法
CN104965538A (zh) * 2015-07-06 2015-10-07 王军 一种晶体生长过程的加热电源控制方法
CN109972201A (zh) * 2019-04-07 2019-07-05 浙江晶盛机电股份有限公司 用于直拉法硅单晶生长过程的晶体直径控制方法
CN110528067A (zh) * 2018-05-25 2019-12-03 隆基绿能科技股份有限公司 一种直拉硅单晶的温度控制方法
CN111254485A (zh) * 2018-12-03 2020-06-09 隆基绿能科技股份有限公司 单晶硅等径生长的控制方法、设备及存储介质
CN111519244A (zh) * 2020-05-28 2020-08-11 璨隆科技发展有限公司 一种应用在单晶生产设备中的电阻式加热器的电源控制方法
CN112789371A (zh) * 2021-01-11 2021-05-11 眉山博雅新材料有限公司 一种晶体生长控制方法和系统
CN112853478A (zh) * 2021-01-07 2021-05-28 西安奕斯伟硅片技术有限公司 晶体等径生长控制方法及晶体等径生长控制装置
WO2023093042A1 (zh) * 2021-11-29 2023-06-01 银川隆基光伏科技有限公司 单晶硅棒的直径调整方法、装置、电子设备及存储介质

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KR20030034357A (ko) * 2001-10-22 2003-05-09 주식회사 실트론 단결정 잉곳 성장장치에서의 잉곳 직경 조절장치 및 잉곳직경 조절 방법
US20030209321A1 (en) * 2002-05-13 2003-11-13 Taiwan Semiconductor Manufacturing Co., Ltd. Scanning type etcher design for precision process control
AU2003290909A1 (en) * 2002-07-05 2004-03-11 Sumitomo Mitsubishi Silicon Corporation Method of producing silicon monocrystal
TW200706711A (en) * 2005-08-12 2007-02-16 Komatsu Denshi Kinzoku Kk Control system and method for time variant system control object having idle time such as single crystal producing device by czochralski method
DE102007001348B4 (de) 2007-01-03 2010-05-12 Forschungsverbund Berlin E.V. Verfahren und Anordnung zur Herstellung von kristallinen Formkörpern aus Schmelzen in Czochralski-Anordnungen
US20080274240A1 (en) * 2007-05-03 2008-11-06 Omar Germouni Adaptive controller and expert system food processing
US8012255B2 (en) * 2008-07-31 2011-09-06 Sumco Phoenix Corporation Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process
US8221545B2 (en) * 2008-07-31 2012-07-17 Sumco Phoenix Corporation Procedure for in-situ determination of thermal gradients at the crystal growth front
US20100024717A1 (en) * 2008-07-31 2010-02-04 Benno Orschel Reversed action diameter control in a semiconductor crystal growth system
MY159737A (en) 2010-09-03 2017-01-31 Gtat Ip Holding Llc Silicon single crystal doped with gallium, indium, or aluminum
KR101277396B1 (ko) * 2011-06-14 2013-06-20 주식회사 엘지실트론 잉곳 성장 제어장치
KR101354758B1 (ko) * 2011-12-19 2014-01-23 삼성전기주식회사 모터의 다중 센서 고장 진단 장치 및 그 방법
KR101379799B1 (ko) 2012-05-23 2014-04-01 주식회사 엘지실트론 단결정 실리콘 잉곳 성장 장치 및 방법
KR101997267B1 (ko) * 2013-01-10 2019-07-05 에스케이실트론 주식회사 잉곳 성장의 제어 방법
CN103710745B (zh) * 2013-12-26 2016-01-20 南京晶升能源设备有限公司 85kg至120kg蓝宝石晶体生长自动化控制方法
KR101571957B1 (ko) * 2014-01-28 2015-11-25 주식회사 엘지실트론 잉곳성장장치 및 잉곳성장방법
KR101571958B1 (ko) 2014-01-28 2015-11-25 주식회사 엘지실트론 잉곳성장장치 및 잉곳성장방법
JP6281884B1 (ja) * 2016-10-28 2018-02-21 株式会社レゾネスト 機械制御装置、機械制御プログラムおよび機械制御方法
KR101874712B1 (ko) * 2016-12-07 2018-07-04 에스케이실트론 주식회사 잉곳 성장 제어장치 및 그 제어방법
JP6614380B1 (ja) * 2019-03-20 2019-12-04 信越半導体株式会社 単結晶製造装置
DE102019211609A1 (de) 2019-08-01 2021-02-04 Siltronic Ag Verfahren zum Ziehen eines Einkristalls aus Silizium gemäß der Czochralski-Methode aus einer Schmelze
CN115198351B (zh) * 2022-08-19 2023-11-24 中国电子科技集团公司第二十六研究所 一种自动生长低温敏感人工晶体材料加热功率控制方法

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Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100371507C (zh) * 2005-03-28 2008-02-27 荀建华 晶体等径生长的控制系统及其方法
CN100383295C (zh) * 2006-03-31 2008-04-23 浙江大学 直拉式晶体生长炉自动控制方法
CN101748477B (zh) * 2008-12-19 2013-10-23 北京太克易航科贸有限公司 用于单晶硅生长过程控制的智能pid控制方法及其系统
US8906157B2 (en) 2009-12-02 2014-12-09 Siltronic Ag Method for pulling a single crystal composed of silicon with a section having a diameter that remains constant
CN102134741A (zh) * 2009-12-02 2011-07-27 硅电子股份公司 用于拉伸具有直径保持不变的区段的硅单晶的方法
CN102134741B (zh) * 2009-12-02 2014-02-26 硅电子股份公司 用于拉伸具有直径保持不变的区段的硅单晶的方法
CN102758250A (zh) * 2012-07-20 2012-10-31 西安理工晶体科技有限公司 锗单晶直拉生长法的自动等径控制方法
CN103834991A (zh) * 2014-03-10 2014-06-04 马鞍山明鑫电气科技有限公司 无温度信号处理开环式功率自控晶体生长控制方法
CN104965538A (zh) * 2015-07-06 2015-10-07 王军 一种晶体生长过程的加热电源控制方法
CN104965538B (zh) * 2015-07-06 2018-04-13 四川英杰电气股份有限公司 一种晶体生长过程的加热电源控制方法
CN110528067A (zh) * 2018-05-25 2019-12-03 隆基绿能科技股份有限公司 一种直拉硅单晶的温度控制方法
CN111254485B (zh) * 2018-12-03 2021-05-04 隆基绿能科技股份有限公司 单晶硅等径生长的控制方法、设备及存储介质
CN111254485A (zh) * 2018-12-03 2020-06-09 隆基绿能科技股份有限公司 单晶硅等径生长的控制方法、设备及存储介质
CN109972201A (zh) * 2019-04-07 2019-07-05 浙江晶盛机电股份有限公司 用于直拉法硅单晶生长过程的晶体直径控制方法
CN111519244A (zh) * 2020-05-28 2020-08-11 璨隆科技发展有限公司 一种应用在单晶生产设备中的电阻式加热器的电源控制方法
CN111519244B (zh) * 2020-05-28 2021-08-24 璨隆科技发展有限公司 一种应用在单晶生产设备中的电阻式加热器的电源控制方法
CN112853478A (zh) * 2021-01-07 2021-05-28 西安奕斯伟硅片技术有限公司 晶体等径生长控制方法及晶体等径生长控制装置
CN112789371A (zh) * 2021-01-11 2021-05-11 眉山博雅新材料有限公司 一种晶体生长控制方法和系统
WO2022147835A1 (zh) * 2021-01-11 2022-07-14 眉山博雅新材料有限公司 一种晶体生长控制方法和系统
WO2023093042A1 (zh) * 2021-11-29 2023-06-01 银川隆基光伏科技有限公司 单晶硅棒的直径调整方法、装置、电子设备及存储介质

Also Published As

Publication number Publication date
DE60001274D1 (de) 2003-02-27
US6776840B1 (en) 2004-08-17
TW552324B (en) 2003-09-11
DE60001274T2 (de) 2003-09-25
WO2000056956A9 (en) 2002-02-14
JP2003528017A (ja) 2003-09-24
WO2000056956A8 (en) 2001-03-22
EP1171652B1 (en) 2003-01-22
WO2000056956A1 (en) 2000-09-28
EP1171652A1 (en) 2002-01-16
KR20010113750A (ko) 2001-12-28
JP4602561B2 (ja) 2010-12-22
KR100690218B1 (ko) 2007-03-12

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