CN1324110C - 用于缓冲酸蚀刻溶液的氟化表面活性剂 - Google Patents
用于缓冲酸蚀刻溶液的氟化表面活性剂 Download PDFInfo
- Publication number
- CN1324110C CN1324110C CNB03824926XA CN03824926A CN1324110C CN 1324110 C CN1324110 C CN 1324110C CN B03824926X A CNB03824926X A CN B03824926XA CN 03824926 A CN03824926 A CN 03824926A CN 1324110 C CN1324110 C CN 1324110C
- Authority
- CN
- China
- Prior art keywords
- etching
- solution
- etching solution
- fluoride
- alkyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/64—Wet etching of semiconductor materials
- H10P50/642—Chemical etching
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/290,765 US7169323B2 (en) | 2002-11-08 | 2002-11-08 | Fluorinated surfactants for buffered acid etch solutions |
| US10/290,765 | 2002-11-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1694939A CN1694939A (zh) | 2005-11-09 |
| CN1324110C true CN1324110C (zh) | 2007-07-04 |
Family
ID=32229103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB03824926XA Expired - Fee Related CN1324110C (zh) | 2002-11-08 | 2003-09-11 | 用于缓冲酸蚀刻溶液的氟化表面活性剂 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7169323B2 (https=) |
| EP (1) | EP1558697B1 (https=) |
| JP (1) | JP4160562B2 (https=) |
| KR (1) | KR101036068B1 (https=) |
| CN (1) | CN1324110C (https=) |
| AT (1) | ATE345375T1 (https=) |
| AU (1) | AU2003272331A1 (https=) |
| DE (1) | DE60309738T2 (https=) |
| WO (1) | WO2004044091A1 (https=) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6890452B2 (en) * | 2002-11-08 | 2005-05-10 | 3M Innovative Properties Company | Fluorinated surfactants for aqueous acid etch solutions |
| WO2005045895A2 (en) * | 2003-10-28 | 2005-05-19 | Sachem, Inc. | Cleaning solutions and etchants and methods for using same |
| US7294610B2 (en) * | 2004-03-03 | 2007-11-13 | 3M Innovative Properties Company | Fluorinated sulfonamide surfactants for aqueous cleaning solutions |
| JP4677890B2 (ja) * | 2005-11-29 | 2011-04-27 | 信越半導体株式会社 | 埋め込み拡散エピタキシャルウエーハの製造方法および埋め込み拡散エピタキシャルウエーハ |
| JP2008124135A (ja) * | 2006-11-09 | 2008-05-29 | Stella Chemifa Corp | 微細加工処理剤、及びそれを用いた微細加工処理方法 |
| EP2139030B1 (en) * | 2007-04-13 | 2014-05-14 | Daikin Industries, Ltd. | Etching solution |
| KR101030057B1 (ko) * | 2008-07-16 | 2011-04-22 | (주) 이피웍스 | 실리콘 폐기물의 재생방법 및 그 방법으로 재생된 실리콘조성물 |
| US20100160458A1 (en) * | 2008-12-23 | 2010-06-24 | 3M Innovative Properties Company | Method of making a composition and aqueous composition preparable thereby |
| US20100155657A1 (en) * | 2008-12-23 | 2010-06-24 | 3M Innovative Properties Company | Aqueous composition containing fluorinated sulfonamide and sulfonamidate compounds |
| WO2010113744A1 (ja) * | 2009-03-30 | 2010-10-07 | 東レ株式会社 | 導電膜除去剤および導電膜除去方法 |
| US8030112B2 (en) * | 2010-01-22 | 2011-10-04 | Solid State System Co., Ltd. | Method for fabricating MEMS device |
| WO2013022673A2 (en) * | 2011-08-10 | 2013-02-14 | 3M Innovative Properties Company | Perfluoroalkyl sulfonamides surfactants for photoresist rinse solutions |
| RU2015128132A (ru) * | 2012-12-14 | 2017-01-18 | Басф Се | Применение композиций, содержащих поверхностно-активное вещество и средство придания гидрофобности, для предохранения рельефа от разрушения при обработке рельефных материалов с линейными размерами, равными 50 нм или менее |
| JP6444316B2 (ja) | 2013-01-29 | 2018-12-26 | スリーエム イノベイティブ プロパティズ カンパニー | 界面活性剤並びにその製造及び使用方法 |
| KR101530606B1 (ko) * | 2014-03-18 | 2015-07-01 | 주식회사 스노젠 | 인산 및 황산계 과불소화알킬 에스테르 계면 활성제와 이를 함유하는 크롬 식각액 및 저온 공정용 소핑제 |
| JP6433730B2 (ja) * | 2014-09-08 | 2018-12-05 | 東芝メモリ株式会社 | 半導体装置の製造方法及び半導体製造装置 |
| EP3191532B1 (en) | 2014-09-11 | 2019-08-28 | 3M Innovative Properties Company | Fluorinated surfactant containing compositions |
| CN104388091B (zh) * | 2014-10-25 | 2016-06-01 | 江阴市化学试剂厂有限公司 | 缓冲氧化腐蚀液制备方法 |
| US11193059B2 (en) | 2016-12-13 | 2021-12-07 | Current Lighting Solutions, Llc | Processes for preparing color stable red-emitting phosphor particles having small particle size |
| KR102460326B1 (ko) * | 2018-06-28 | 2022-10-31 | 오씨아이 주식회사 | 실리콘 기판 식각 용액 |
| TW202035361A (zh) * | 2018-12-12 | 2020-10-01 | 美商3M新設資產公司 | 氟化胺氧化物界面活性劑 |
| CN111171965B (zh) * | 2020-01-20 | 2021-07-20 | 安徽建筑大学 | 一种运行清洗多功能复合清洗液 |
| CN112939804B (zh) * | 2021-02-04 | 2022-11-15 | 济宁康德瑞化工科技有限公司 | 一种有机胺氧化物的制备方法 |
| CN116590020A (zh) | 2021-05-20 | 2023-08-15 | 斯泰拉化工公司 | 微细加工处理剂、和微细加工处理方法 |
| DE102021116206B3 (de) * | 2021-06-23 | 2022-09-29 | Infineon Technologies Bipolar Gmbh & Co. Kg | Verfahren und Vorrichtung zur Herstellung einer Randstruktur eines Halbleiterbauelements |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4370254A (en) * | 1979-05-25 | 1983-01-25 | Bayer Aktiengesellschaft | Use of perfluoroalkane sulphonamide salts as surface active agents |
| CN1005288B (zh) * | 1985-05-23 | 1989-09-27 | 荷兰塞纳拉帕拉塔公司 | 工作于两个频段的雷达系统 |
| CN1227279A (zh) * | 1997-11-21 | 1999-09-01 | 国际商业机器公司 | 蚀刻组合物及其用途 |
| US6201122B1 (en) * | 1992-12-08 | 2001-03-13 | 3M Innovative Properties Company | Fluoroaliphatic radical-containing anionic sulfonamido compounds |
| CN1328696A (zh) * | 1998-11-24 | 2001-12-26 | 大金工业株式会社 | 蚀刻溶液,蚀刻制品和制造蚀刻制品的方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1037857A (en) | 1963-07-11 | 1966-08-03 | Pennsalt Chemicals Corp | Method and composition for cleaning resin coated substrates |
| US4055458A (en) | 1975-08-07 | 1977-10-25 | Bayer Aktiengesellschaft | Etching glass with HF and fluorine-containing surfactant |
| DE3038985A1 (de) * | 1980-10-15 | 1982-05-27 | Bayer Ag, 5090 Leverkusen | Verfahren zum saeurepolieren von glas |
| EP0073863B1 (en) | 1981-09-08 | 1985-07-03 | Dainippon Ink And Chemicals, Inc. | Fluorine-containing aminosulfonate |
| JPS6039176A (ja) | 1983-08-10 | 1985-02-28 | Daikin Ind Ltd | エッチング剤組成物 |
| US4585624A (en) * | 1984-11-19 | 1986-04-29 | Young Galen F | Paraformaldehyde gas generator for fumigating animal houses |
| JPS63283028A (ja) | 1986-09-29 | 1988-11-18 | Hashimoto Kasei Kogyo Kk | 微細加工表面処理剤 |
| US5350489A (en) * | 1990-10-19 | 1994-09-27 | Purex Co., Ltd. | Treatment method of cleaning surface of plastic molded item |
| US5085786A (en) | 1991-01-24 | 1992-02-04 | Minnesota Mining And Manufacturing Company | Aqueous film-forming foamable solution useful as fire extinguishing concentrate |
| DE69418458T2 (de) | 1993-02-04 | 2000-01-27 | Daikin Industries, Ltd. | Nassaetzungsverbindung fuer halbleiter mit ausgezeichneten befeuchtungseigenschaften |
| US5803956A (en) | 1994-07-28 | 1998-09-08 | Hashimoto Chemical Company, Ltd. | Surface treating composition for micro processing |
| US5478436A (en) | 1994-12-27 | 1995-12-26 | Motorola, Inc. | Selective cleaning process for fabricating a semiconductor device |
| JP3923097B2 (ja) | 1995-03-06 | 2007-05-30 | 忠弘 大見 | 洗浄装置 |
| US5688884A (en) | 1995-08-31 | 1997-11-18 | E. I. Du Pont De Nemours And Company | Polymerization process |
| JP3332700B2 (ja) | 1995-12-22 | 2002-10-07 | キヤノン株式会社 | 堆積膜形成方法及び堆積膜形成装置 |
| AU2830997A (en) | 1996-06-06 | 1998-01-05 | Minnesota Mining And Manufacturing Company | Fire-fighting agents containing adsorbable fluorocarbon surfactants |
| US6348157B1 (en) | 1997-06-13 | 2002-02-19 | Tadahiro Ohmi | Cleaning method |
| US6807824B1 (en) | 1999-04-27 | 2004-10-26 | Hiroshi Miwa | Glass etching composition and method for frosting using the same |
| US6600557B1 (en) | 1999-05-21 | 2003-07-29 | Memc Electronic Materials, Inc. | Method for the detection of processing-induced defects in a silicon wafer |
| EP1246856B1 (en) | 1999-10-27 | 2009-07-15 | 3M Innovative Properties Company | Fluorochemical sulfonamide surfactants |
| US6310018B1 (en) | 2000-03-31 | 2001-10-30 | 3M Innovative Properties Company | Fluorinated solvent compositions containing hydrogen fluoride |
| US20020089044A1 (en) | 2001-01-09 | 2002-07-11 | 3M Innovative Properties Company | Hermetic mems package with interlocking layers |
| JP2002256460A (ja) | 2001-02-09 | 2002-09-11 | Nippon Parkerizing Co Ltd | アルミニウムおよびアルミニウム合金に用いるエッチングとデスマッティング用の組成物及びその方法 |
| US20020142619A1 (en) | 2001-03-30 | 2002-10-03 | Memc Electronic Materials, Inc. | Solution composition and process for etching silicon |
| US6555510B2 (en) | 2001-05-10 | 2003-04-29 | 3M Innovative Properties Company | Bis(perfluoroalkanesulfonyl)imides and their salts as surfactants/additives for applications having extreme environments and methods therefor |
-
2002
- 2002-11-08 US US10/290,765 patent/US7169323B2/en not_active Expired - Lifetime
-
2003
- 2003-09-11 EP EP03754508A patent/EP1558697B1/en not_active Expired - Lifetime
- 2003-09-11 AU AU2003272331A patent/AU2003272331A1/en not_active Abandoned
- 2003-09-11 WO PCT/US2003/028606 patent/WO2004044091A1/en not_active Ceased
- 2003-09-11 AT AT03754508T patent/ATE345375T1/de not_active IP Right Cessation
- 2003-09-11 JP JP2004551464A patent/JP4160562B2/ja not_active Expired - Fee Related
- 2003-09-11 DE DE60309738T patent/DE60309738T2/de not_active Expired - Lifetime
- 2003-09-11 CN CNB03824926XA patent/CN1324110C/zh not_active Expired - Fee Related
- 2003-09-11 KR KR1020057008079A patent/KR101036068B1/ko not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4370254A (en) * | 1979-05-25 | 1983-01-25 | Bayer Aktiengesellschaft | Use of perfluoroalkane sulphonamide salts as surface active agents |
| CN1005288B (zh) * | 1985-05-23 | 1989-09-27 | 荷兰塞纳拉帕拉塔公司 | 工作于两个频段的雷达系统 |
| US6201122B1 (en) * | 1992-12-08 | 2001-03-13 | 3M Innovative Properties Company | Fluoroaliphatic radical-containing anionic sulfonamido compounds |
| CN1227279A (zh) * | 1997-11-21 | 1999-09-01 | 国际商业机器公司 | 蚀刻组合物及其用途 |
| CN1328696A (zh) * | 1998-11-24 | 2001-12-26 | 大金工业株式会社 | 蚀刻溶液,蚀刻制品和制造蚀刻制品的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20050072795A (ko) | 2005-07-12 |
| US20040089840A1 (en) | 2004-05-13 |
| EP1558697B1 (en) | 2006-11-15 |
| WO2004044091A1 (en) | 2004-05-27 |
| DE60309738D1 (de) | 2006-12-28 |
| CN1694939A (zh) | 2005-11-09 |
| JP2006505667A (ja) | 2006-02-16 |
| JP4160562B2 (ja) | 2008-10-01 |
| KR101036068B1 (ko) | 2011-05-19 |
| US7169323B2 (en) | 2007-01-30 |
| EP1558697A1 (en) | 2005-08-03 |
| ATE345375T1 (de) | 2006-12-15 |
| DE60309738T2 (de) | 2007-09-20 |
| AU2003272331A1 (en) | 2004-06-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070704 |