CN1312743C - 电介体膜及其形成方法，使用其的半导体装置及制造方法 - Google Patents

电介体膜及其形成方法，使用其的半导体装置及制造方法 Download PDF

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Publication number
CN1312743C
CN1312743C CNB2003101143644A CN200310114364A CN1312743C CN 1312743 C CN1312743 C CN 1312743C CN B2003101143644 A CNB2003101143644 A CN B2003101143644A CN 200310114364 A CN200310114364 A CN 200310114364A CN 1312743 C CN1312743 C CN 1312743C
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dielectric film
mentioned
silicon
plasma
resin
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Chinese (zh)
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CN1505116A (zh
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后藤真志
中田行彦
东和文
冈本哲也
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Liguid Crystal Advanced Technology Development Center K K
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Liguid Crystal Advanced Technology Development Center K K
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H

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  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
CNB2003101143644A 2002-12-03 2003-11-11 电介体膜及其形成方法，使用其的半导体装置及制造方法 Expired - Fee Related CN1312743C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2002351167 2002-12-03
JP2002351167 2002-12-03
JP2003121773 2003-04-25
JP2003121773 2003-04-25
JP2003309332 2003-09-01
JP2003309332A JP2004343031A (ja) 2002-12-03 2003-09-01 誘電体膜およびその形成方法ならびに誘電体膜を用いた半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
CN1505116A CN1505116A (zh) 2004-06-16
CN1312743C true CN1312743C (zh) 2007-04-25

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CNB2003101143644A Expired - Fee Related CN1312743C (zh) 2002-12-03 2003-11-11 电介体膜及其形成方法，使用其的半导体装置及制造方法

Country Status (5)

Country Link
US (2) US20040113227A1 (https=)
JP (1) JP2004343031A (https=)
KR (1) KR100527149B1 (https=)
CN (1) CN1312743C (https=)
TW (1) TWI230969B (https=)

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US7273638B2 (en) * 2003-01-07 2007-09-25 International Business Machines Corp. High density plasma oxidation
US7282438B1 (en) 2004-06-15 2007-10-16 Novellus Systems, Inc. Low-k SiC copper diffusion barrier films
WO2006025363A1 (ja) * 2004-08-31 2006-03-09 Tokyo Electron Limited シリコン酸化膜の形成方法、半導体装置の製造方法およびコンピュータ記憶媒体
JP4028538B2 (ja) * 2004-09-10 2007-12-26 株式会社東芝 半導体装置の製造方法およびその製造装置
JP2006135161A (ja) * 2004-11-08 2006-05-25 Canon Inc 絶縁膜の形成方法及び装置
KR100648632B1 (ko) * 2005-01-25 2006-11-23 삼성전자주식회사 높은 유전율을 갖는 유전체 구조물의 제조 방법 및 이를 포함하는 반도체 소자의 제조 방법
JP5084169B2 (ja) * 2005-04-28 2012-11-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8138104B2 (en) * 2005-05-26 2012-03-20 Applied Materials, Inc. Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure
US8129290B2 (en) 2005-05-26 2012-03-06 Applied Materials, Inc. Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure
JP4679437B2 (ja) * 2005-06-02 2011-04-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7820495B2 (en) * 2005-06-30 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2007043121A (ja) * 2005-06-30 2007-02-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4897948B2 (ja) * 2005-09-02 2012-03-14 古河電気工業株式会社 半導体素子
KR20090115222A (ko) * 2005-11-15 2009-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
JP2007250715A (ja) * 2006-03-15 2007-09-27 Konica Minolta Holdings Inc 半導体デバイスの製造方法
US7932138B2 (en) * 2007-12-28 2011-04-26 Viatron Technologies Inc. Method for manufacturing thin film transistor
JP2010192755A (ja) * 2009-02-19 2010-09-02 Tokyo Electron Ltd シリコン酸化膜の成膜方法および半導体装置の製造方法
CN102239545A (zh) * 2009-09-17 2011-11-09 东京毅力科创株式会社 成膜方法、半导体元件的制造方法、绝缘膜以及半导体元件
JP5601821B2 (ja) * 2009-11-11 2014-10-08 三菱電機株式会社 薄膜トランジスタおよびその製造方法
KR101657341B1 (ko) * 2011-04-25 2016-09-13 도쿄엘렉트론가부시키가이샤 성막 방법
CN102260857B (zh) * 2011-07-25 2013-02-06 润峰电力有限公司 一种晶硅表面镀膜及其制备方法
JP5814712B2 (ja) * 2011-09-15 2015-11-17 日本放送協会 薄膜デバイスの製造方法
JP2013179106A (ja) * 2012-02-28 2013-09-09 Hitachi Ltd Ｍｉｍキャパシタを有する半導体装置
JP2013214655A (ja) * 2012-04-03 2013-10-17 Nippon Telegr & Teleph Corp <Ntt> 光半導体素子
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US8975625B2 (en) * 2013-05-14 2015-03-10 Applied Materials, Inc. TFT with insert in passivation layer or etch stop layer
KR102250116B1 (ko) 2020-08-20 2021-05-11 쿠팡 주식회사 보냉 포장박스

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US6218314B1 (en) * 1999-04-01 2001-04-17 Taiwan Semiconductor Manufacturing Company Silicon dioxide-oxynitride continuity film as a passivation film
JP2001110802A (ja) * 1999-10-06 2001-04-20 Matsushita Electric Ind Co Ltd 絶縁膜の形成方法

Also Published As

Publication number Publication date
JP2004343031A (ja) 2004-12-02
TW200410297A (en) 2004-06-16
CN1505116A (zh) 2004-06-16
KR20040048808A (ko) 2004-06-10
US20090029507A1 (en) 2009-01-29
KR100527149B1 (ko) 2005-11-08
TWI230969B (en) 2005-04-11
US20040113227A1 (en) 2004-06-17

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