JP2004343031A - 誘電体膜およびその形成方法ならびに誘電体膜を用いた半導体装置およびその製造方法 - Google Patents

誘電体膜およびその形成方法ならびに誘電体膜を用いた半導体装置およびその製造方法 Download PDF

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Publication number
JP2004343031A
JP2004343031A JP2003309332A JP2003309332A JP2004343031A JP 2004343031 A JP2004343031 A JP 2004343031A JP 2003309332 A JP2003309332 A JP 2003309332A JP 2003309332 A JP2003309332 A JP 2003309332A JP 2004343031 A JP2004343031 A JP 2004343031A
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Japan
Prior art keywords
dielectric film
silicon
plasma
gas
composition ratio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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JP2003309332A
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English (en)
Japanese (ja)
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JP2004343031A5 (https=
Inventor
Shinji Goto
真志 後藤
Yukihiko Nakada
行彦 中田
Kazufumi Azuma
東　　和文
Tetsuya Okamoto
哲也 岡本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced LCD Technologies Development Center Co Ltd
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Advanced LCD Technologies Development Center Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced LCD Technologies Development Center Co Ltd filed Critical Advanced LCD Technologies Development Center Co Ltd
Priority to JP2003309332A priority Critical patent/JP2004343031A/ja
Priority to TW092124712A priority patent/TWI230969B/zh
Priority to KR10-2003-0066819A priority patent/KR100527149B1/ko
Priority to CNB2003101143644A priority patent/CN1312743C/zh
Priority to US10/726,870 priority patent/US20040113227A1/en
Publication of JP2004343031A publication Critical patent/JP2004343031A/ja
Publication of JP2004343031A5 publication Critical patent/JP2004343031A5/ja
Priority to US11/998,202 priority patent/US20090029507A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6927—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H

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  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
JP2003309332A 2002-12-03 2003-09-01 誘電体膜およびその形成方法ならびに誘電体膜を用いた半導体装置およびその製造方法 Abandoned JP2004343031A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2003309332A JP2004343031A (ja) 2002-12-03 2003-09-01 誘電体膜およびその形成方法ならびに誘電体膜を用いた半導体装置およびその製造方法
TW092124712A TWI230969B (en) 2002-12-03 2003-09-08 Dielectric film, its formation method, semiconductor device using the dielectric film and its production method
KR10-2003-0066819A KR100527149B1 (ko) 2002-12-03 2003-09-26 유전체 막 및 그 형성방법, 및 유전체 막을 이용한 반도체장치 및 그 제조방법
CNB2003101143644A CN1312743C (zh) 2002-12-03 2003-11-11 电介体膜及其形成方法，使用其的半导体装置及制造方法
US10/726,870 US20040113227A1 (en) 2002-12-03 2003-12-02 Dielectric film, its formation method, semiconductor device using the dielectric film and its production method
US11/998,202 US20090029507A1 (en) 2002-12-03 2007-11-28 Dielectric film, its formation method, semiconductor device using the dielectric film and its production method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002351167 2002-12-03
JP2003121773 2003-04-25
JP2003309332A JP2004343031A (ja) 2002-12-03 2003-09-01 誘電体膜およびその形成方法ならびに誘電体膜を用いた半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2004343031A true JP2004343031A (ja) 2004-12-02
JP2004343031A5 JP2004343031A5 (https=) 2006-09-28

Family

ID=32512115

Family Applications (1)

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JP2003309332A Abandoned JP2004343031A (ja) 2002-12-03 2003-09-01 誘電体膜およびその形成方法ならびに誘電体膜を用いた半導体装置およびその製造方法

Country Status (5)

Country Link
US (2) US20040113227A1 (https=)
JP (1) JP2004343031A (https=)
KR (1) KR100527149B1 (https=)
CN (1) CN1312743C (https=)
TW (1) TWI230969B (https=)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332634A (ja) * 2005-04-28 2006-12-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2007013133A (ja) * 2005-06-02 2007-01-18 Semiconductor Energy Lab Co Ltd 半導体装置及びその製造方法
JP2007043121A (ja) * 2005-06-30 2007-02-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2007250715A (ja) * 2006-03-15 2007-09-27 Konica Minolta Holdings Inc 半導体デバイスの製造方法
JP2011103370A (ja) * 2009-11-11 2011-05-26 Mitsubishi Electric Corp 薄膜トランジスタおよびその製造方法
US8361845B2 (en) 2005-06-30 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2013062456A (ja) * 2011-09-15 2013-04-04 Nippon Hoso Kyokai <Nhk> 薄膜デバイスおよびその製造方法
JP2013214655A (ja) * 2012-04-03 2013-10-17 Nippon Telegr & Teleph Corp <Ntt> 光半導体素子

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US7763327B2 (en) * 1996-04-22 2010-07-27 Micron Technology, Inc. Methods using ozone for CVD deposited films
US7273638B2 (en) * 2003-01-07 2007-09-25 International Business Machines Corp. High density plasma oxidation
US7282438B1 (en) 2004-06-15 2007-10-16 Novellus Systems, Inc. Low-k SiC copper diffusion barrier films
WO2006025363A1 (ja) * 2004-08-31 2006-03-09 Tokyo Electron Limited シリコン酸化膜の形成方法、半導体装置の製造方法およびコンピュータ記憶媒体
JP4028538B2 (ja) * 2004-09-10 2007-12-26 株式会社東芝 半導体装置の製造方法およびその製造装置
JP2006135161A (ja) * 2004-11-08 2006-05-25 Canon Inc 絶縁膜の形成方法及び装置
KR100648632B1 (ko) * 2005-01-25 2006-11-23 삼성전자주식회사 높은 유전율을 갖는 유전체 구조물의 제조 방법 및 이를 포함하는 반도체 소자의 제조 방법
US8138104B2 (en) * 2005-05-26 2012-03-20 Applied Materials, Inc. Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure
US8129290B2 (en) 2005-05-26 2012-03-06 Applied Materials, Inc. Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure
JP4897948B2 (ja) * 2005-09-02 2012-03-14 古河電気工業株式会社 半導体素子
KR20090115222A (ko) * 2005-11-15 2009-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
US7932138B2 (en) * 2007-12-28 2011-04-26 Viatron Technologies Inc. Method for manufacturing thin film transistor
JP2010192755A (ja) * 2009-02-19 2010-09-02 Tokyo Electron Ltd シリコン酸化膜の成膜方法および半導体装置の製造方法
CN102239545A (zh) * 2009-09-17 2011-11-09 东京毅力科创株式会社 成膜方法、半导体元件的制造方法、绝缘膜以及半导体元件
KR101657341B1 (ko) * 2011-04-25 2016-09-13 도쿄엘렉트론가부시키가이샤 성막 방법
CN102260857B (zh) * 2011-07-25 2013-02-06 润峰电力有限公司 一种晶硅表面镀膜及其制备方法
JP2013179106A (ja) * 2012-02-28 2013-09-09 Hitachi Ltd Ｍｉｍキャパシタを有する半導体装置
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US8975625B2 (en) * 2013-05-14 2015-03-10 Applied Materials, Inc. TFT with insert in passivation layer or etch stop layer
KR102250116B1 (ko) 2020-08-20 2021-05-11 쿠팡 주식회사 보냉 포장박스

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US5274602A (en) * 1991-10-22 1993-12-28 Florida Atlantic University Large capacity solid-state memory
JPH11279773A (ja) * 1998-03-27 1999-10-12 Tomoo Ueno 成膜方法
JP3698390B2 (ja) * 1998-07-29 2005-09-21 パイオニア株式会社 電子放出表示装置及び電子放出装置
US6018187A (en) * 1998-10-19 2000-01-25 Hewlett-Packard Cmpany Elevated pin diode active pixel sensor including a unique interconnection structure
US6218314B1 (en) * 1999-04-01 2001-04-17 Taiwan Semiconductor Manufacturing Company Silicon dioxide-oxynitride continuity film as a passivation film
JP2001109014A (ja) * 1999-10-05 2001-04-20 Hitachi Ltd アクティブマトリクス型液晶表示装置
JP2001110802A (ja) * 1999-10-06 2001-04-20 Matsushita Electric Ind Co Ltd 絶縁膜の形成方法
US6288435B1 (en) * 1999-12-28 2001-09-11 Xerox Corporation Continuous amorphous silicon layer sensors using doped poly-silicon back contact
US6613695B2 (en) * 2000-11-24 2003-09-02 Asm America, Inc. Surface preparation prior to deposition
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TW588570B (en) * 2001-06-18 2004-05-21 Semiconductor Energy Lab Light emitting device and method of fabricating the same

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006332634A (ja) * 2005-04-28 2006-12-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2007013133A (ja) * 2005-06-02 2007-01-18 Semiconductor Energy Lab Co Ltd 半導体装置及びその製造方法
JP2007043121A (ja) * 2005-06-30 2007-02-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US8361845B2 (en) 2005-06-30 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101524076B1 (ko) * 2005-06-30 2015-05-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
JP2007250715A (ja) * 2006-03-15 2007-09-27 Konica Minolta Holdings Inc 半導体デバイスの製造方法
JP2011103370A (ja) * 2009-11-11 2011-05-26 Mitsubishi Electric Corp 薄膜トランジスタおよびその製造方法
JP2013062456A (ja) * 2011-09-15 2013-04-04 Nippon Hoso Kyokai <Nhk> 薄膜デバイスおよびその製造方法
JP2013214655A (ja) * 2012-04-03 2013-10-17 Nippon Telegr & Teleph Corp <Ntt> 光半導体素子

Also Published As

Publication number Publication date
TW200410297A (en) 2004-06-16
CN1505116A (zh) 2004-06-16
KR20040048808A (ko) 2004-06-10
US20090029507A1 (en) 2009-01-29
CN1312743C (zh) 2007-04-25
KR100527149B1 (ko) 2005-11-08
TWI230969B (en) 2005-04-11
US20040113227A1 (en) 2004-06-17

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