CN1303683C - 半导体装置 - Google Patents

半导体装置 Download PDF

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CN1303683C
CN1303683C CNB028121775A CN02812177A CN1303683C CN 1303683 C CN1303683 C CN 1303683C CN B028121775 A CNB028121775 A CN B028121775A CN 02812177 A CN02812177 A CN 02812177A CN 1303683 C CN1303683 C CN 1303683C
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semiconductor device
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main electrode
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CN1516897A (zh
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M·斯塔恩丁
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Infineon science and technology Americas
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International Rectifier Corp USA
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Abstract

示出和叙述了一半导体装置，该装置包括在其一内部接纳一半导体小硅片的一金属容器。金属容器具有形成在其顶部上的一凹槽。该凹槽提供对金属容器的顶部的刚性，以允许容器的壁进一步与小硅片分开，从而提供一大得多的敞开通道，该通道便于在焊接之后易于洗净残留的焊剂。

Description

半导体装置
相关申请
本申请是在Martin standing于2001年6月18日提交的、标题为“为了改进的焊剂清洗(Flux Flushing)在外壳容器和小硅片之间有较大间隙的高压半导体装置壳体”的美国临时申请No.60/299,048的基础上提出和对其要求优先权。
技术领域
本发明涉及半导体装置，更具体地涉及允许增加该装置的额定电压的倒装晶片类的一半导体装置。
发明背景
装置小型化已导致开发晶片级或接近晶片级半导体装置。这样一种装置包括一容器型连接件，该连接件在它的内部接受一半导体小硅片和通过例如焊接或导电的环氧树脂的一层导电材料连接到小硅片的一电极。容器型连接件包括围绕小硅片的一壁部。该壁与小硅片和它的电极的周边封闭地分开。当使用熔解的焊接剂将这一装置焊接到一板上时，剩余的焊剂沉积在焊接处周围。当为这目的使用不是那些标注为“不清洁”产品的焊剂时，需要从该装置下面清除这些剩余物，以防止该装置形成腐蚀或断电。
图1A-1B和2A-2B示出了已知半导体装置的例子，其中一MOSFET小硅片10容装在一半导体金属容器11内，小硅片具有在它顶面的一漏极9和在它的底表面的源极14和栅极(未示出)。从而，如通过焊接或通过一导电粘结剂将漏极9固定到容器11的内表面。容器11的边缘12与小硅片10的周边分开。可选择地，在边缘12和容器11之间可以设置一绝缘环13。源极14的底表面可以与边缘12的凸缘15的底面是共平面的或稍许不大齐平。当该组件被向下焊接到板17上的导电电路时，必须清除焊剂残余物。在容器的边缘12和板之间的一浅间隙16(见图2B)限制了清洗的介质在该装置之下的自由流动的能力。因此，不能易于实现在装置之下的适当清洗。在源电极14和边缘12的内部之间的封闭空间可能妨碍清洗残余焊剂和可能降低能够施加于该组件的电压。
因此，希望一半导体装置便于容易地清洗残留焊剂和施加较高的电压。
发明内容
本发明提供一半导体装置，它包括：一半导体小硅片，它具有在其一第一主要表面上的一第一主电极，在与所述第一主要表面相对的一第二主要表面上的一第二主电极，以及设置在所述第二主要表面上的和与所述第二主电极电绝缘的一控制电极；以及一金属容器，所述金属容器包括：电连接于所述第一主电极的一腹板部分，所述腹板部分包括设置在所述小硅片周围和朝所述小硅片突出的一框架，以及从所述腹板部分的边缘延伸的一周壁，所述周壁与所述框架分开，从而在所述框架和所述周壁之间存在一空间。
按照本发明，通过增加小硅片的周边和金属容器的本体之间的间隙，从而可以较容易地去除残留的熔剂。
本发明还提供一半导体装置，它包括：一半导体小硅片，它具有在其一第一主表面上的一第一主电极、在其与所述第一主表面相对的一第二主表面上的一第二主电极和设置在所述第二主表面上和与所述第二主电极电绝缘的一控制电极；以及一金属容器，所述金属容器包括：电连接于所述第一主电极的一腹板部分，从所述腹板部分的边缘延伸的一周壁，所述周壁与所述小硅片分开；以及设置在所述小硅片和所述周壁之间的一凸缘，以增加所述腹板部分的刚性。
按照本发明的半导体装置包括在它的内部接纳一半导体小硅片的一金属容器。该金属容器包括形成在它的顶表面上的一凹槽(或凸缘)，这产生了围绕半导体小硅片的一框架。该凹槽增加了容器的顶部的刚性，从而降低了施加在小硅片和小硅片附连材料上的应力。由于容器的边缘的高度增加和所形成的诸漏极触点之间的距离增加。可以实现该装置之下的较有效的清洗。这又产生能在高压下工作的一装置。
从以下参照附图对本发明的叙述中本发明的其它特征和优点将变得显而易见。
附图概述
图1A和1B示出了按照现有技术的半导体装置的俯视图；
图2A是图1A和1B的装置沿着线2A-2A截取的、按箭头方向观察的剖视图；
图2B是图1A和1B的装置沿着线2B-2B截取的、按箭头方向观察的剖视图；
图3是按照本发明的一半导体装置；
图4是图3所示的装置沿着线4-4截取的、按箭头方向观察的剖视图。
具体实施方式
参阅图3，按照本发明的一半导体装置包括金属容器19。金属容器19较佳地由铜形成和可以镀银。金属容器19包括一腹板部分20。腹板部分20在其中形成凹槽21。例如可以通过冲压形成凹槽21。可以用围绕小硅片10的金属容器19的顶部的一半切割留下的部分来代替凹槽21。
现在参阅图4，按照本发明的一半导体装置包括金属容器19。金属容器19由一腹板部分20、周壁22和诸基部23组成。小硅片的漏极9例如由一层焊剂或导电环氧树脂电连接于金属容器19的腹板部分20。在金属容器19的腹板20中形成有凹槽21，该凹槽形成围绕小硅片10的周边的框架21a。可选用地，在框架21a和小硅片10的周边之间可以设置一绝缘环13。
周壁22与小硅片10分开和从金属容器19的腹板部分20的边缘向下延伸。围绕周壁22的底边分开诸基部23，以及诸基部与小硅片10的源极14是共平面的。诸基部23是可电连接于板17上的导电部分(未示出)，从而将漏极电连接于板17上的导电部分(未示出)。在较佳实施例中，诸基部23背离金属容器19的内部延伸，从而与小硅片10分开。但是，诸基部23可以形成为沿着任何方向延伸。例如，诸基部23可以被定向为朝向金属容器的内部的方向或者甚至垂直朝向板17的方向延伸以减小该装置接触底板的面积。
腹板20还包括设置在凹槽21和周壁22之间的边缘部分24。可以延伸边缘部分24以增加源极14和周壁22之间的空间30。在源极14和周壁22之间的距离增加改进了漏电，以及允许该组件使用于高压。同样，空间30的加大允许改进在该组件向下焊接到板17时产生的残余焊剂的清洗工作。能够通过延伸边缘部分24实现空间的增大，这是因为凹槽(或半切割所留下的部分)产生了围绕小硅片的一凸缘，这增加了刚度，否则通过简单地增加腹板的尺寸是不能增加刚度的。其结果，在腹板部分20中形成的框架具有先前已知容器的刚度，同时提供了围绕该装置的边缘的更加大得多的间隙，这允许更可靠的清除残余焊剂。
虽然相对于它的特定实施例叙述了本发明，对于本领域的那些熟练人员来说许多其它变化和修改以及其它使用将变得很明显。因此，较佳的是本发明不是由在本文中的特定揭示的内容所限定，而是仅由所附权利要求书限定。

Claims (23)

1.一半导体装置，它包括：
一半导体小硅片，它具有在其一第一主要表面上的一第一主电极，在与所述第一主要表面相对的一第二主要表面上的一第二主电极，以及设置在所述第二主要表面上的和与所述第二主电极电绝缘的一控制电极；以及
一金属容器，所述金属容器包括：
电连接于所述第一主电极的一腹板部分，所述腹板部分包括设置在所述小硅片周围和朝所述小硅片突出的一框架，以及
从所述腹板部分的边缘延伸的一周壁，所述周壁与所述框架分开，从而在所述框架和所述周壁之间存在一空间。
2.如权利要求1所述的半导体装置，其特征在于，所述周壁包括多个基部，所述诸基部与所述第二主电极是共平面的。
3.如权利要求1所述的半导体装置，其特征在于，所述诸基部背离小硅片延伸。
4.如权利要求1所述的半导体装置，其特征在于，所述半导体小硅片是一MOSFET。
5.如权利要求1所述的半导体装置，其特征在于，所述第一主电极通过一导电环氧树脂电连接至所述腹板部分。
6.如权利要求1所述的半导体装置，其特征在于，所述第一主电极通过一层焊料电连接至所述腹板部分。
7.如权利要求1所述的半导体装置，其特征在于，金属容器由铜制造。
8.如权利要求7所述的半导体装置，其特征在于，金属容器是镀银的。
9.如权利要求1所述的半导体装置，其特征在于，所述框架是通过冲压在所述金属容器的所述腹板部分中的一凹槽而形成。
10.如权利要求1所述的半导体装置，其特征在于，还包括在所述小硅片的周边和所述框架之间延伸的一绝缘环。
11.如权利要求1所述的半导体装置，其特征在于，用围绕所述第二主电极设置的所述腹板的一半切割留下的部分代替所述框架。
12.一半导体装置，它包括：
一半导体小硅片，它具有在其一第一主表面上的一第一主电极、在其与所述第一主表面相对的一第二主表面上的一第二主电极和设置在所述第二主表面上和与所述第二主电极电绝缘的一控制电极；以及
一金属容器，所述金属容器包括：
电连接于所述第一主电极的一腹板部分，
从所述腹板部分的边缘延伸的一周壁，所述周壁与所述小硅片分开；以及
设置在所述小硅片和所述周壁之间的一凸缘，以增加所述腹板部分的刚性。
13.如权利要求12所述的半导体装置，其特征在于，所述凸缘是围绕所述小硅片设置的一框架。
14.如权利要求12所述的半导体装置，其特征在于，所述周壁包括许多基部，所述诸基部与所述第二主电极是共平面的。
15.如权利要求12所述的半导体装置，其特征在于，所述诸基部背离所述小硅片延伸。
16.如权利要求12所述的半导体装置，其特征在于，所述半导体小硅片是一MOSFET。
17.如权利要求12所述的半导体装置，其特征在于，所述第一主电极通过一层导电的环氧树脂电连接至所述腹板部分。
18.如权利要求12所述的半导体装置，其特征在于，所述第一主电极通过一层焊剂电连接至所述腹板部分。
19.如权利要求12所述的半导体装置，其特征在于，所述金属容器是由铜制造的。
20.如权利要求19所述的半导体装置，其特征在于，所述金属容器是镀银的。
21.如权利要求12所述的半导体装置，其特征在于，所述凸缘通过冲压在所述金属容器的所述腹板部分中的一凹槽而形成。
22.如权利要求12所述的半导体装置，其特征在于，还包括在所述小硅片的周边和所述凸缘之间延伸的一绝缘环。
23.如权利要求12所述的半导体装置，其特征在于，所述凸缘是围绕所述第二主电极设置的所述腹板部分的一半切割留下的部分。
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