CN1271711C - 暴露信号线以及在信号线与基片之间有间隙的半导体器件 - Google Patents

暴露信号线以及在信号线与基片之间有间隙的半导体器件 Download PDF

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CN1271711C
CN1271711C CNB021230021A CN02123002A CN1271711C CN 1271711 C CN1271711 C CN 1271711C CN B021230021 A CNB021230021 A CN B021230021A CN 02123002 A CN02123002 A CN 02123002A CN 1271711 C CN1271711 C CN 1271711C
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三原孝行
赤崎裕二
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Fujitsu Semiconductor Ltd
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Abstract

一种半导体器件，其中包括：半导体芯片；连接到半导体芯片的信号电极的信号引线；与信号引线电连接的外部信号电极；沿着信号引线延伸的接地引线；以及密封半导体芯片、信号引线、外部信号电极和接地引线的密封树脂。该外部信号电极被形成为从密封树脂的下表面凸起的凸起电极，以及信号引线的一个表面暴露在密封树脂的下表面上。

Description

暴露信号线以及在信号线与 基片之间有间隙的半导体器件
技术领域
本发明一般涉及半导体器件，特别涉及处理包括微波在内的高频信号的半导体器件。
通常，陶瓷封装主要用作为处理微波的半导体器件的封装。但是，最近树脂封装已经被用于处理微波的半导体器件。另外，处理微波的半导体器件本身变为多功能并且以高速度工作，其需要适合的封装。
背景技术
日本专利公开No.1-202853公开一种适应高频的模子封装半导体器件，其中引线的暴露部分和非暴露部分的阻抗相匹配。该半导体器件是一种小轮廓封装(SOP)类型的半导体器件，其中引线从树脂封装部分的侧表面伸出。
在上述半导体器件中，通过调节引线的形状和排列，引线的暴露部分(从树脂封装中延伸出来的部分)的特性阻抗与引线的非暴露部分(嵌入在树脂封装中的部分)的特性曲线相互匹配，从而防止微波从暴露部分和非暴露部分之间的边界部分反射。
另外，在适应微波的半导体器件中，接地引线需要提供在用于高频信号的引线的两侧。也就是说，把外部接地电极设置在用于高频信号的外部电极的两侧，防止高频信号的干扰，并且使该半导体器件小型化。
在日本专利公开No.1-202853中公开一种上述半导体器件，该引线必须具有复杂的形状，从而使暴露部分的特性阻抗与非暴露部分的特性阻抗相匹配。
另外，在把上述半导体器件连接到印刷基片等等之后，由于在构成印刷基片的材料的相对介电常数中的差别，导致需要重新调节特性阻抗。例如，假设半导体器件连接到陶瓷基片时，该阻抗匹配，此后该陶瓷基片变为环氧树脂基片，必须重新调节阻抗。
具体来说，当与暴露部分相接触的构成印刷基片的材料的相对介电常数改变时，该暴露部分的阻抗也改变，从而与非暴露部分的阻抗不匹配。然后，考虑到印刷基片的相对介电常数，为了调节引线的暴露部分的阻抗，需要重新设计引线框架本身。
另外，由于非暴露部分由密封树脂所包围，因此引线的非暴露部分受到密封树脂的特性的影响。特别地，对于传输微波的引线，传输特性根据密封树脂的类型而变差。
发明内容
本发明的一般目的是提供一种改进和有用的半导体器件，其消除上述问题。
本发明的更加具体的目的是提供一种半导体器件，其中引线的阻抗不受到构成安装基片的材料的影响，并且密封树脂对传输特性的影响可以减小。
为了实现上述目的，根据本发明一个方面，在此提供一种半导体器件，其中包括：
半导体芯片；
分别传输高频信号并且分别连接到所述半导体芯片的信号电极的信号引线；
分别与所述信号引线之一连接的外部信号电极；
分别沿着所述信号引线之一延伸并且将每个所述信号引线彼此分开的接地引线；以及
密封所述半导体芯片、所述信号引线、所述外部信号电极和所述接地引线的密封树脂，
其中，每个所述外部信号电极被形成为从所述密封树脂的下表面凸起的凸起电极，并且每个所述信号引线的一个表面暴露在所述密封树脂的下表面上。
根据本发明，信号引线的一个表面暴露在密封树脂的下表面上，外部信号电极形成为一个凸起电极；因此，当半导体器件安装在安装基片上时，在信号引线和安装基片之间形成空气间隙。从而，暴露信号引线不与安装基片相接触，因此信号引线的阻抗不会由于形成安装基片的材料的影响而改变。相应地，即使当形成安装基片的材料改变时，相同的半导体器件保持可用。另外，由于仅仅信号引线的一个表面与密封树脂相接触，因此与信号引线的两个表面都与密封树脂相接触的情况相比，可以减少由于密封树脂所导致的信号传输损耗。
另外，根据本发明的半导体器件可以进一步包括提供在半导体芯片下方的接地电极，该接地电极凸起的高度与在密封树脂的下表面上的信号电极凸起的高度相同。
根据本发明，该半导体器件不但可以通过置于半导体器件的外围部分的外部信号电极，而且可以通过置于半导体芯片下方的接地电极连接到安装基片。
另外，在根据本发明的半导体器件中，接地电极可以形成为大于半导体芯片的外部形状，并且半导体芯片的接地电极可以通过接合线连接到接地电极。
根据本发明，半导体芯片的接地电极可以接地到附近的接地电极，从而获得良好的接地效果。
另外，根据本发明的半导体器件可以进一步包括与外部信号电极相邻的外部接地电极。
根据本发明，与外部信号电极相邻的部分可以接地，从而获得良好的接地效果。
另外，根据本发明的半导体器件可以包括提供在外部信号电极外围的外围接地部分，其中接地引线沿着信号引线从接地电极延伸到外围接地部分。
根据本发明，信号引线的外围和外部信号电极完全被接地引线和外围接地部分所包围，从而获得良好的屏蔽效果。
另外，在根据本发明的半导体器件中，半导体芯片的接地电极可以由接合线连接到接地引线。
根据本发明，接合线的连接部分可以沿着接地引线而改变，从而调节连接到接地引线的接合线的长度。
为了实现上述目的，根据本发明的另一个方面，在此提供一种半导体器件，其中包括：半导体芯片；连接到所述半导体芯片的信号电极的信号引线；与所述信号引线连接的外部信号电极；沿着所述信号引线中传输高频信号的每个信号引线延伸的至少一个接地引线；以及密封所述半导体芯片、所述信号引线、所述外部信号电极和所述接地引线的密封树脂，其中，每个所述外部信号电极被形成为从所述密封树脂的下表面凸起的凸起电极，并且每个所述信号引线的一个表面暴露在所述密封树脂的下表面上。
根据本发明，该接地引线不对不传输高频信号的信号引线提供。因此，不形成不必要的接地引线，因此可以在一定程度上减小半导体器件的尺寸。
另外，在根据本发明的半导体器件中，信号引线的特性阻抗可以被调节，使得半导体芯片的输入输出阻抗与通过外部信号电极连接到信号引线的外部电路的阻抗相匹配。
根据本发明，可以有效地把高频信号从外部电路提供到半导体芯片。
另外，在根据本发明的半导体器件中，可以通过调节连接到半导体芯片的信号电极和接地电极的每个接合线的引线直径，并且调节接合线之间的间距而调节特性阻抗。
根据本发明，可以把高频信号有效地从外部电路提供到半导体芯片。
从下结合附图的详细描述中，本发明的其它目的、特点和优点将变得更加清楚。
附图说明
图1为示出根据本发明第一实施例的半导体器件的透视图；
图2为沿着图1的线II-II截取的截面；
图3为根据本发明第二实施例的半导体器件的透视图；以及
图4为沿着图3的线IV-IV截取的截面视图；
具体实施方式
下面参照附图给出根据本发明的实施例的描述。
图1为根据本发明第一实施例的半导体器件的透视图。为了简化，图1仅仅示出半导体器件的四分之一。图2为沿着图1的线II-II截取的截面视图。根据本发明第一实施例的半导体器件是无引线封装型的半导体器件，其中例如信号端这样的外部连接端被形成为一个凸起电极。根据本发明第一实施例的半导体器件具有作为无引线封装的基本结构，其类似于在日本专利公开No.10-79448。
图1中所示的半导体器件包括半导体芯片1、内部电极2、信号引线3、外部信号电极4、接地电极5、接地引线6、外部接地电极7、以及接合线8，并且具有一种封装结构，其中这些部件被密封树脂9所密封。
如图2中所示，半导体芯片1安装在接地电极5上。接地电极5在半导体芯片1的外围上延伸。接地引线6从接地电极5的外围延伸，并且连接到外部接地电极7。外部接地电极7被置于被提供微波信号的每个外部信号电极4的两侧。接地引线6被设置在被提供微波信号的每个信号引线3的两侧。
与信号引线3相连接的内部电极2通过接合线8连接到半导体芯片1的信号电极1a。半导体芯片1的接地电极1b通过接合线8连接到接地电极5。
如图2中所示，外部信号电极4被形成为密封树脂9的下表面上的凸起电极。从外部信号电极4延伸的信号引线3和与信号引线3相连接的内部电极2暴露在密封树脂9的下表面上。换句话说，信号引线3和内部电极2仅仅被密封树脂9覆盖一个表面，并且另一个表面从密封树脂9暴露出来。
另外，接地电极5也以凸起的形状从密封树脂9的下表面暴露。接地电极5的凸起高度等于形成为凸起电极的外部信号电极4的凸起高度。尽管未在该图中示出，但是外部接地电极7也按照类似于外部信号电极4的方式形成为一个凸起电极，并且接地引线6也暴露在密封树脂9的下表面上。
在把如上文所述构成的半导体器件安装在安装基片上之后，形成为从密封树脂9的下表面凸起的外部信号电极4、外部接地电极7和接地电极5被连接到形成于安装基片上的电极焊盘。因此，半导体器件被安装在安装基片上，从而信号引线3和内部电极2与安装基片的表面相分离，也就是说，在信号引线3/内部电极2与安装基片之间形成空气间隙。
因此，由被提供微波的信号引线3、内部电极2等等所形成的信号传输路径的特性阻抗不受到形成安装基片的材料的影响。相应地，改变形成安装基片的材料，不需要通过改变信号引线3的形状和排列或者重新设计半导体，而改变阻抗。
另外，信号引线3和内部电极2仅仅被密封树脂9覆盖一个表面，并且与由密封树脂覆盖两个表面的常规半导体器件相比，由于与信号引线3和内部电极2相接触的密封树脂9的微波的传输损耗可以被减小。
已知，由于密封材料的影响所导致的传输损耗取决于密封材料的介质损耗角正切(dielectric loss tangent)的数值，从而当介质损耗角正切的数值较小时，影响较小。例如，介质损耗角正切的数值对于树脂密封材料为0.01的量级，并且对于具有良好的高频特性的陶瓷材料为0.001的量级。另外，介质损耗角正切的数值对于空气基本上为0。相应地，通过用树脂材料取代昂贵的陶瓷材料增加传输损耗；但是，在本发明中，在一个表面上暴露信号引线3和内部电极2可以抑制对于微波的传输损耗的增加。
在上述半导体器件中，通过改变构成内部电极2的一部分的形状和排列调节特性阻抗，信号引线3和外部信号电极4使得半导体芯片1的输入输出阻抗与外部电路的阻抗相匹配。
例如，连接到外部信号电极4的安装基片的外部电路的特性阻抗假设为50欧，并且半导体芯片1的输入输出阻抗假设为100欧。在这种情况中，引线图案被如此改变，使得在内部电极2的附近的信号引线3的特性阻抗变为100欧，并且在外部信号电极4的附近的信号引线3的特性阻抗变为50欧。换句话说，引线图案被如此改变使得信号引线3的特性阻抗逐步减小。这使得半导体芯片1的输入输出阻抗与外部电路的特性阻抗相匹配。
并且，对于接合线8，按照与信号引线3相同的方式调节特性阻抗，使得高频特性进一步改进。具体来说，改变接合线8的线路直径或者相邻的接合线8之间的间隔实现所需的特性阻抗。
接着，将参照图3和图4给出根据本发明第二实施例的半导体器件的描述。图3为根据本发明第二实施例的半导体器件的透视图。为了简化，图3仅仅示出半导体器件的四分之一。图4为沿着图3的线IV-IV截取的截面示图。
根据本发明第二实施例的半导体器件包括按照与上述根据第一实施例的半导体器件相同的方式构造的信号引线3和外部信号电极4，但是接地引线的结构不同。如图3中所示，在本实施例中，外围接地部分10被提供在外部信号电极4的外部，并且接地引线6A在接地电极5和外围接地部分10之间延伸。半导体芯片1的接地电极1b由接合线8连接到每个接地引线6A。
在本实施例中，不提供与外部信号电极4相邻的外部接地电极(7)，因此仅仅通过接地电极5进行接地。因此，形成在半导体器件中的电极数目可以被减少，从而可以整体地减少半导体器件的尺寸。另外，信号引线3和外部信号电极4的外围完全被接地引线6A和外围接地部分10所包围，从而信号引线3和外部信号电极4被屏蔽。
本发明不限于在此所公开的具体实施例，并且可以作出各种改变和变型而不脱离本发明的范围。
本发明基于在2001年11月30日递交的日本在先申请No.2001-367309，其内容被包含与此以供参考。

Claims (9)

1.一种半导体器件，其中包括：
半导体芯片；
分别传输高频信号并且分别连接到所述半导体芯片的信号电极的信号引线；
分别与所述信号引线之一连接的外部信号电极；
分别沿着所述信号引线之一延伸并且将每个所述信号引线彼此分开的接地引线；以及
密封所述半导体芯片、所述信号引线、所述外部信号电极和所述接地引线的密封树脂，
其中，每个所述外部信号电极被形成为从所述密封树脂的下表面凸起的凸起电极，并且每个所述信号引线的一个表面暴露在所述密封树脂的下表面上。
2.根据权利要求1所述的半导体器件，其中进一步包括：提供在所述半导体芯片下方的接地电极，该接地电极凸起的高度与所述信号电极在所述密封树脂的下表面上凸起的高度相同。
3.根据权利要求2所述的半导体器件，其中所述接地电极形成为大于所述半导体芯片的外部形状，并且所述半导体芯片的接地电极通过接合线连接到所述接地电极。
4.根据权利要求2所述的半导体器件，其中进一步包括与所述外部信号电极之一相邻的外部接地电极。
5.根据权利要求2所述的半导体器件，其中进一步包括提供在所述外部信号电极的外围的外围接地部分，其中所述接地引线沿着所述信号引线从所述接地电极延伸到所述外围接地部分。
6.根据权利要求5所述的半导体器件，其中所述半导体芯片的所述接地电极通过所述接合线连接到所述接地引线之一。
7.根据权利要求1所述的半导体器件，其中所述信号引线的特性阻抗被如此调节，使得所述半导体芯片的输入输出阻抗与通过所述外部信号电极连接到所述信号引线的外部电路的阻抗相匹配。
8.根据权利要求7所述的半导体器件，其中通过调节连接到所述半导体芯片的信号电极和接地电极的每个接合线的线直径，并且通过调节接合线之间的间距，调节所述特性阻抗。
9.一种半导体器件，其中包括：
半导体芯片；
连接到所述半导体芯片的信号电极的信号引线；
与所述信号引线连接的外部信号电极；
沿着所述信号引线中传输高频信号的每个信号引线延伸的至少一个接地引线；以及
密封所述半导体芯片、所述信号引线、所述外部信号电极和所述接地引线的密封树脂，
其中，每个所述外部信号电极被形成为从所述密封树脂的下表面凸起的凸起电极，并且每个所述信号引线的一个表面暴露在所述密封树脂的下表面上。
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