CN1265226A - 用于建立芯片一衬底－连接的设备和方法 - Google Patents

用于建立芯片一衬底－连接的设备和方法 Download PDF

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CN1265226A
CN1265226A CN98807568A CN98807568A CN1265226A CN 1265226 A CN1265226 A CN 1265226A CN 98807568 A CN98807568 A CN 98807568A CN 98807568 A CN98807568 A CN 98807568A CN 1265226 A CN1265226 A CN 1265226A
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S·格雷特施
H·L·阿尔陶斯
W·斯佩斯
G·波格纳
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Infineon Optical Fiber Technology Co Ltd
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Abstract

本发明涉及一种用于特别是通过把半导体芯片(2)焊接在衬底(3)上建立芯片－衬底－连接(1)的设备,该设备具有一个在其上或在其旁暂时支承有衬底(3)的支架(7)和一个配属于芯片－衬底－连接(1)的加热装置(8)。加热装置(8)具有一个激光器形式的、在红外一波长范围内的辐射源(9)。支架(7)是通过一个配属于芯片－衬底－连接(1)的、被辐射源(9)以热辐射加热的热载体(15)构成的,其中,热载体(15)的表面覆有对由辐射源(9)发出的光辐射(14)有高的吸收率的材料(4),特别是覆有铬。

Description

用于建立芯片-衬底-连接的设备和方法
本发明涉及一种用于特别是通过把半导体芯片焊接在衬底上建立芯片-衬底-连接的设备和方法，该设备具有一个在其上或其旁暂时支承该衬底的一个支架和一个配属于芯片-衬底-连接的加热装置。
在把半导体芯片的背面连接到衬底上时，这种情况一般被称为芯片-或模片键合，根据具体的应用场合，涉及充分的、机械的牢固性及良好的导热和导电性能的要求必须单项地或全部地被满足。芯片和衬底的相容性，即两个待连接的构件在其遇有热负荷时的膨胀特性方面匹配的相容性具有特殊的意义。目前，通常用于固定芯片的方法主要分为三种：合金(硬焊)、焊接(软焊)和粘结。本发明优选采用的是焊接(软焊)，在该方法原理中，与譬如用于固定芯片的低共熔的硅/金硬焊不同，芯片中没有硅进入熔体。在大大低于450℃的温度下并从而又再次在远远低于参与金属的熔点下软焊时，被金属化了的连接构件通过熔化的焊剂被浸润并被连接。在软焊时出现的温度虽可使该方法用到所有的、通常的衬底上，但该方法最好被用到金属的结构支架(所谓的引线框架)上或陶瓷的壳座上。总的说来，在用软焊法固定芯片时，要求连接构件能在热膨胀特性方面相互适配，但在软焊时所要求的限度要宽于熔成合金时要求的限度。
未经处理的芯片背面通常不能用软焊剂浸润，芯片背面须被金属化。除了也适用于软焊要求的在半导体上有良好的附着能力和要求无阻挡层的过渡之外，还附加地要求具有良好的可焊性，即可浸润性。为了无阻挡层地过渡，在n-si层上主要有金属Ti、NiSi和AuSb是行之有效的，在P-Si层上主要有金属Al、Cr和Au是行之有效的。衬底表面通常是化学镀镍的。如果需要低的焊接温度，则还可考虑电镀银。
迄今，电阻加热的焊接卡座或加热线圈被用作加热待连接的材料和半导体芯片的热源。但这些热源具有如下缺点：其加热至焊接温度所需的时间过长(通常远长于1秒)，据此，焊剂会发生氧化并且从而须采用保护气体或还原气氛。
发明的任务在于提供一种用于特别是通过把一个半导体芯片固定在一个衬底上，譬如一个金属的结构支架或陶瓷的壳座上建立芯片-衬底-连接的设备和方法，在该设备或者在该方法中，为了建立焊接连接，在很短的时间内，即约一秒或短于一秒的时间内，可加热到高于典型的350℃，并且同时使相关的半导体芯片所承受的热负荷保持在尽可能低的水平上。
对设备而言，解决以上任务的技术方案在于权利要求1，对方法而言，解决以上任务的技术方案在于权利要求10。
按照发明，规定加热装置具有一个辐射源，并且用于支承衬底的支架作为加热装置的构成部分具有一个配属于芯片-衬底-连接的、在设备运行中可被辐射源以电磁辐射加热的热载体。按照发明的原理，辐射源是一个在红外波长范围内发出激光辐射的激光器。
与迄今在为了固定芯片的软焊中采用的加热源相比，本发明具有特别是如下优点：
-通过采用典型的为950纳米左右的红外波长范围内的激光辐射，半导体芯片和衬底的焊料连接处可在很短的时间内，即约一秒或短于一秒的时间内被加热至约350℃以上，其中，所用的激光器功率根据被热辐射加热的热载体适配地被选择，使热载体为了把红外光能转换成热能，具有足够高的激光辐射吸收能力，并且从另一方面考虑，激光器的功率又不可大得使待连接的半导体芯片处于过高的热负荷之下。
-通过以极高的速度加热至焊接温度，焊剂的氧化被避免，据此，也可在不用保护气体或还原气氛的情况下作业。基于加热至焊接温度只需很短时间，可不用助焊剂。
-短时间的加热可近似点状地和从而单芯片地进行，据此，只有那个相关的、用于建立焊接连接的半导体芯片可控地被加热，而与之相邻的半导体芯片尚未经过显著升温。
概念“芯片-衬底-连接”应不仅被理解为对单个的从晶片复合体切割出的或锯开的芯片的连接，而且还应理解为对多个出自晶片复合体的，所谓的芯片条的、尚且连在一起的半导体芯片的连接。
发明还有利地规定，加热装置的配属于芯片-衬底-连接的热载体具有一种对辐射源的热辐射透明的或至少透射的材料。石英作为用于热载体的优选材料基于其小的膨胀率具有如下优点：短时的、局部出现的温度波动不导致裂纹或断裂。
按照发明的原理，还规定热载体在其面对芯片-衬底-连接的一侧具有一种对由辐射源输送的光辐射的吸收率高的材料。具有高的吸收率的材料作为薄的金属层，尤其是作为薄的铬层特别有利地敷在热载体的面对芯片-衬底-连接的表面上。在采用透明的热载体，例如是石英的情况下，只要铬层会没有问题地、充分地附着在热载体上，铬敷层的厚度有利地为几百个纳米，最多达约几微米或以上。按照发明，热载体上的具有高激光吸收率的材料的优点首先在于，为了把红外光能转换成热能，可达到对激光辐射足够高的吸收率。同时，通过该材料的良好的吸收率，可选用较小的激光器功率，据此，为了按照发明建立芯片-衬底-连接，已可提供使用的、特别好地适宜的激光源，特别是半导体激光二极管的应用被进一步开辟。
在热载体上覆有激光吸收材料的情况下，热载体本身本应是一个坏的热导体并且对激光辐射本应是理想地透明的，或者在导热性能好的情况下应具有足够小的热容量。据此，在两种情况下，不用于加热原始材料的能量可占少的份额。从该意义上，也优选由石英构成的，其上覆有一层用作能量吸收体的铬层的热载体。
可特别有利地规定，高吸收率的材料的展开范围被限定在芯片-衬底-连接的直接相关的半导体芯片的待加热的截面范围。据此，为在对相邻的芯片不进行不必要的加热的情况下单个地键合芯片提供了可能性。
下面借助一个在附图中示出的实施例继续说明本发明。附图所示具体为：
图1用于在应用一个红外-激光源的情况下，通过软焊一个半导体芯片建立芯片-衬底-连接的设备的断面示意图。
在图1中示出的实施例，包括一个发明的用于通过把一个单个的半导体芯片2软焊到衬底3上建立芯片-衬底-连接1的设备。出于简化原因，标号4示意地表示所有的在半导体芯片2的背面上为建立芯片-衬底-连接所需的材料，即软焊剂和视情况所需的、其它可焊的覆层。在图1中也仅仅示意地、部分地示出了用作用于固定半导体芯片的衬垫的衬底3。在图1中示出了预制的、金属的结构支架(所谓的引线框架)，该结构支架特别是用在塑料壳中时是一个很普及的衬底构形。衬底3通常以一条金属带的连续的方式被输往用于建立芯片-衬底-连接的设备，一个单个的半导体芯片借助一个专门成型的吸持凸块5从(图中未示出的)粘附薄膜上取下晶片为了切割成芯片粘附到该薄膜上，并被定位和放到衬底3的为此规定的位置(如图1所示)上。随后，借助发明的设备，通过软焊对半导体芯片2和衬底3进行连接。发明的设备包括一个固定在一个台子6上的、其上暂时支承有衬底3的支架7及一个配属于芯片-衬底-连接1的加热装置8。
按照发明，加热装置8包括一个红外-激光辐射源9，最好是一个半导体激光二极管，红外-激光辐射源9是借助一个电气连接的控制装置10受到控制的，并其具有约950纳米波长的激光辐射经由一个光导体11和光学的聚焦透镜12、13被导至一个用光辐射14加热的热载体15上。热载体15由一块石英板构成，该石英板在其面对芯片-衬底-连接1的表面16上覆有100纳米至约300纳米厚的铬层17。其中，铬层17用作吸收馈入的激光辐射15的吸收层，把辐射入的、红外光能转换成热能并把该热能转到与热载体15在热的方面紧密相连的衬底3上并从而转到焊剂4上。据此，按照发明的一个基本的构思，支承衬底3的支架7同时为加热装置8的构成部分结构，这就是说，该支架是用激光辐射源9的热辐射加热的热载体15。用发明的设备可在极短的时间内，即在典型的短于1秒的时间内只把待连接的构成部分，即半导体芯片2和衬底3加热至所需的约高于350℃的焊接温度。其中，激光器9的能量中的不用于加热待连接的构成部分的份额可保持尽可能地小，为了预热，作为辅助，可设有一个预先已知结构的、但在图中未示出的加热源。

Claims (18)

1.用于特别是通过把半导体芯片(2)焊接在衬底(3)上建立芯片-衬底-连接(1)的设备，该设备具有一个在其上或在其旁暂时支承有衬底(3)的支架(7)和一个配属于芯片-衬底-连接(1)的加热装置(8)，
其特征在于，
加热装置(8)具有一个辐射源(9)，并且支架(7)作为加热装置(8)的构成部分，具有一个可被辐射源(9)的电磁辐射，特别是激光辐射加热的热载体(15)。
2.按照权利要求1所述的设备，
其特征在于，
辐射源(9)是一个在红外波长范围内进行激光辐射的激光器。
3.按照权利要求2所述的设备，
其特征在于，
激光辐射的波长为约950纳米。
4.按照权利要求1至3之一所述的设备，
其特征在于，
加热装置(8)的配属于芯片-衬底-连接(1)的热载体(15)具有一种对辐射源(9)的热辐射透明的或至少透射的材料。
5.按照权利要求4所述的设备，
其特征在于，
热载体(15)具有石英。
6.按照权利要求1至5之一所述的设备，
其特征在于，
热载体(15)在其面对芯片-衬底-连接(1)的一侧具有一种对由辐射源(9)输送的光辐射(14)的吸收率高的材料(4)。
7.按照权利要求6所述的设备，
其特征在于，
热载体(15)的面对芯片-衬底-连接(1)的表面覆有对由辐射源(9)发出的光辐射(14)具有高的吸收率的材料(4)。
8.按照权利要求6或7所述的设备，
其特征在于，
热载体(15)在其面对芯片-衬底-连接(1)的表面(16)上具有薄的铬层(17)。
9.按照权利要求6至8之一所述的设备，
其特征在于，
具有高的吸收率的材料(4)的展开范围被限定在芯片-衬底-连接(1)的直接相关的半导体芯片(2)的待加热的截面范围。
10.用于特别是通过把半导体芯片(2)焊接到衬底(3)上建立芯片-衬底-连接(1)的方法，应用一个在其上或在其旁暂时支承有衬底(3)的支架(7)和应用一个配属于芯片-衬底-连接(1)的加热装置(8)，
其特征在于，
一个辐射源(9)被用作加热装置(8)，并且支架(7)具有一个热载体(15)作为加热装置(8)的构成部分，该热载体(15)借助辐射源(9)的电磁辐射，特别是激光辐射被加热。
11.按照权利要求10所述的方法，
其特征在于，
一个具有在红外波长范围内激光辐射的激光器被用作辐射源(9)。
12.按照权利要求11所述的方法，
其特征在于，
激光辐射的波长为约950纳米。
13.按照权利要求10至12之一所述的方法，
其特征在于，
加热装置(8)的配属于芯片-衬底-连接(1)的热载体(15)具有一种对辐射源(9)的热辐射透明的或至少透射的材料(4)。
14.按照权利要求13所述的方法，
其特征在于，
热载体(15)具有石英。
15.按照权利要求10至14之一所述的方法，
其特征在于，
热载体(15)在其面对芯片-衬底-连接(1)的一侧具有一种对由辐射源(9)输送的光辐射(14)的吸收率高的材料(4)。
16.按照权利要求15所述的方法，
其特征在于，
热载体(15)的面对芯片-衬底-连接(1)的表面覆有对由辐射源(9)发出的光辐射(14)具有高的吸收率的材料(4)。
17.按照权利要求15或16所述的方法，
其特征在于，
热载体(15)在其面对芯片-衬底-连接(1)的表面上具有薄的铬层(17)。
18.按照权利要求15至17之一所述的方法，
其特征在于，
具有高的吸收率的材料(4)的展开范围被限定到芯片-衬底-连接(1)的直接相关的半导体芯片(2)的待加热的截面范围。
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