CN102396298A - 用于在透明的基板上对结构元件进行导电连接的方法 - Google Patents
用于在透明的基板上对结构元件进行导电连接的方法 Download PDFInfo
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Abstract
本发明涉及一种用于将电结构元件与至少一个导电层进行导电连接的方法,其中,所述导电层被施加于在可见光波长范围内基本上透明的基板上,所述方法包括如下步骤:所述电结构元件或导电层在结构元件应与导电层连接的区域内被设有钎焊材料;向所述钎焊材料以如下方式输送自能量源输出的能量,即,所述钎焊材料被熔化,并且在所述电结构元件与所述导电层之间构造不可松解的、材料配合的导电连接。
Description
技术领域
本发明涉及一种用于将电结构元件与至少一个导电层进行导电连接的方法,其中,所述导电层被施加到在可见光波长范围内基本上透明的基板上。在本申请中,可见波长被理解为:层或基板的在420nm与700nm之间的透射率大于60%,特别是大于80%,优选大于90%。
背景技术
由现有技术,特别是WO 01/82378公知的是:借助钎焊法,将结构元件,特别是发光二极管安设在具有导电层的透明的基板上。这一点依照WO 01/82378通过如下方式来实现:将由导电膏或导电漆构成的连接部位安设到具有能导电的层的基板上,并且然后用钎焊法将所述连接部位与结构元件,特别是发光二极管相连接。
由DE 10 2004 018 109 A1,对于带有至少一个盘片(该盘片设有导电结构,特别是可电加热的涂层)的板状元件设置为:例如通过钎焊连接来执行对所述层的电接触,其中,钎焊功率同样贯穿固定的盘片被安设到钎焊部位上。
但是,DE 10 2004 018 109 A1未介绍结构元件在导电层上的安设方案,而仅介绍了在用于加热目的的导电结构上安设电连接部的方案。
由EP 0 584 356已公知的是,通过以激光辐照部件用以将应与基础材料连接的部件加以钎焊的方法。所述方法基本上涉及金属材料与集成电路芯片或与电容的连接方案。
在EP 0 584 356中并未公开的是:所述基础材料可以包括透明的基板。此外,在基础材料上从顶部进行钎焊。
由DE 43 12 642已公知借助红外光进行的钎焊,其中,导电元件(例如导体线(Leiterdraht)或接触点(Kontaktfleck))与半导体芯片连接。
由DE 100 19 888 A1已公知的是:将照明机构在透明基板上的再流钎焊
DE-A-23 43 235示出借助可见光和/或红外光将印刷电路钎焊到导体带上的方案。带有依照DE 23 43 235的导体带的承载体对于热辐射而言是良好可透过的。对导体带的材料并未做出说明。为了快速地加热可钎焊的接触面并使钎焊材料实现流动,根据DE 2343 235附加地设置有超声波源。
DE 195 04 967 A1示出用于将柔性基板的接触元件与电子结构元件的接触金属化部以热学的方式相连接的方法,其中,通过激光辐照来给入能量。
发明内容
本发明的任务是:克服现有技术的缺点,并且特别是给出如下的合理方法,通过该方法能够以简单方式将具有导电涂层的电气元件在透明的基板上进行连接。
根据本发明,这一点通过根据权利要求1所述的、用以将电结构元件与至少一个导电层导电连接的方法来实现,其中,所述导电层被施加于在可见光波长范围内基本上透明的基板上,所述方法包括如下步骤:
-在应将结构元件与导电层相连接的区域内,所述电结构元件或导电层被设有钎焊材料,优选设有发射电磁射束的能量源,特别是光源,所述光源优选为卤素灯或激光光源;
-以如下方式向所述钎焊材料输送由能量源输出的能量,即:所述钎焊材料熔化,并且在所述电结构元件与所述导电层之间构造不可松解的、材料配合的导电连接。
根据本发明的方法实现的是:可以在透明的基板上非常迅速地对结构元件(特别是光导二极管)进行同样可以为自动化的钎焊。通过所述快速的、特别是自动的钎焊,相对于现有技术,实现了使时钟频率缩短了因数2.5以及不依赖于操纵者的工作。此外,在构件与布置在透明的基板上的导电结构之间形成可靠的导电连接。另一优点在于:避免了使用含溶剂的清洗剂,从而可以使用现有的玻璃刷洗机。此外还获得了钎焊出柔性连接部的可行性方案。构件的连接部可例如直接构造在导体带上,例如包括氧化锡或银的导体带上。
与在透明的基板(特别是玻璃基板)上对结构元件迄今常用的粘接方案相比,钎焊具有大量优点。于是,钎焊材料具有比粘接剂更高的抗紫外线性能。这特别是在外部应用中具有优点。此外,钎焊材料是实际上100%导电材料,与之相对照地粘接剂的导电性较弱。
在本发明的第一实施方案中,将钎焊材料安设到在可见范围内基本上透明的导电涂层上。所述导电涂层可例如包括氧化锡。
在本发明的可另选的构造方案中,可以设置为:例如以丝网印刷或筛网印刷或借助转印贴花机(Transferschiebebildern),首先将连接部位安设到导电层上。然后,将钎焊材料施加到连接部位上。然后在连接部位与结构元件之间构造钎焊连接。所述连接部位可优选由导电膏或导电漆(例如银导电漆或银导电膏)构造。优选的是,在施加之后例如借助丝网印刷来烧烙所述导电膏或漆。通过烧烙,可以同时对透明的基板预加应力,特别是对透明的玻璃基板预加应力。由此,达到对于后续方法步骤而言很高的机械强度。
所述透明的基板优选具有上侧和底侧,其中,透明的导电层被施加到所述上侧上,能量源(优选为光源)的能量被从底侧贯穿透明的基板输入到待连接的材料中。能量从底侧穿过基板的输入使得:应与透明的涂层导电连接的结构元件的温度负荷降低至最小值。
特别有利的是,透明的基板包括吸热层,例如金属氧化物层(例如氟掺杂的氧化锡层)。通过吸热层可以大大减少钎焊时间,这是因为充分利用了如下事实:透明层在应固定有构件的部位上被加热。因为热量基本上输入到导电的透明基板中,所以构件在钎焊时间很短的情况下承受负荷最小。短钎焊时间意味着:例如短于60秒,特别是短于30秒,优选短于10秒,非常优选短于5秒,特别是短于1秒的钎焊时间。特别地,可通过将导电涂层构造为吸热层而取消额外如DE 23 43 235中所介绍的、为达到很短的钎焊时间对超声波装置的使用。
特别优选的是,导电层(其特别也可是吸热的)包括金属氧化物,优选ITO(InOx:Sn)、FTO(SnOx:F)或ATO(SnOx:Sb)。同样可以考虑的是:ZnOx:Ga、ZnO:F、ZnOx:B、ZnOx:Al或Ag/TiOx。在前面提及的化合物中,依赖于掺杂浓度和化学计量地,x处在1与2之间的范围内。特别优选的是SnO2:F或SnO2:Sb。当透明的基板(特别是玻璃基板)具有FTO-层(SnOx:F)时,可以使用例如波长在500-1500nm范围内而且功耗在50W至1000W,特别是100W至500W范围内的卤素灯,以达到小于30秒,特别是小于10秒,优选在10秒至0.1秒的范围内,特别是在10秒至1秒的范围内的钎焊时间。在使用这样的层时,可行的是:同样以相对小的功耗来达到非常短的钎焊时间,而不使用例如根据DE 23 43 235辐射超声波能量的额外措施。通过在钎焊时间同时很短的情况下相对小的功耗,使得特别经济的加工成为可能。
作为导电层至透明的基板上的施加方法的有:化学气相沉积(CVD)、物理气相沉积(PVD)、浸渍涂覆或化学涂覆或电化学涂覆。另外,可行的是,喷雾热解、溅射、溶胶-凝胶法。借助喷雾热解的施加是特别经济的,其中,作为涂层材料优选使用的是氟掺杂的氧化锡(SnOx:F)。如果想达到特别高的光学特性,则优选的施加方法是溅射。
透明的基板可以是玻璃基板还有塑料基板。作为基板材料可特别考虑的是透明或几乎透明的那些基板材料。透明的基板被理解为在可见波长范围内具有>80%透射率的那些基板。在本申请中,几乎透明的层或玻璃被理解为在可见波长范围内具有>60%透射率的那些基板。可见波长范围优选为420nm与700nm之间。作为玻璃特别考虑的是以氟掺杂的氧化锡(SnOx:F)涂覆的钠钙玻璃。
例如借助电磁波,特别是例如借助光来自动化地进行能量供给。光的使用也作为光钎焊法被加以介绍。在光钎焊法中,例如在可见波长范围或红外波长范围内的光的光束从下方传导穿过水平放置的基板,其中,所述光束同样设有钎焊膏或有待进行钎焊的构件的透明层相遇。特别地,在光钎焊法中,波长为0.5至2μm的短波红外光聚焦到钎焊部位上。优选的是,通过将光源布置于半椭圆镜的焦点进行聚焦,使得从光源发射的所有光束都聚焦在椭圆的第二焦点。能量在钎焊部位表面通过吸收转化为热量。光束能量可以通过光源功率、辐照时长以及聚焦的类型来改变,也就是,能量输入可以通过参数,时间、工作电流和聚焦位置来非常精确地进行调整和调节。根据光学系统,焦斑的直径在数mm的范围内,优选在0.1mm与100mm之间。作为光源可使用例如卤素灯的光。所述光的波长在500nm与1500nm之间,所述卤素灯的功耗为50W至1000W,优选100W至500W,特别是250W。
除卤素光源之外,用于光钎焊法的特定光源是例如发射波长>700nm的红外射束的激光光源。
特别优选的是将电结构元件与至少一个导体带或导电层进行导电连接的方法,其中,所述导体带或导电层施加于在可见光波长范围内基本上透明的基板上,其中,所述透明的基板包括吸热层,并且所述导电层同时是吸热层,包括如下步骤:在结构元件应与导电层或导体带相连接的区域内,给所述电结构元件或导体带或导电层设有钎焊材料;向所述钎焊材料输送由发射电磁射束的能量源输出的自动化的能量,方式为:所输送的能量在应固定有构件的部位上基本上引入到吸收热量的导体带或导电层中,从而所述钎焊材料熔化并在很短的钎焊时间之内在构件负荷最小的情况下在所述电结构元件与所述导体带或导电层之间形成不可松解的、材料配合的导电连接。
特别地不限于此的是:钎焊时间小于30秒,特别是小于10秒,优选在0.1秒与10秒之间的范围内,优选在1秒与10秒之间的范围内。
能量源(特别是光源)的所发射的电磁射束的波长优选在500nm至1500nm的范围内。
能量源可例如为功耗在50W与1000W之间,特别是100W与500W之间的卤素灯。
电磁射束优选聚焦到焦斑上,其中,焦斑具有0.1mm至100mm,优选1mm至10mm的范围内的直径。
在所述方法的构造方案中,透明的基板具有上侧和底侧,其中,透明的导电层施加到上侧上,能量源的能量被从底侧贯穿透明的基板输入至钎焊材料。
导电层优选包括选自下列金属氧化物中的一种或多种的金属氧化物:
-InOx:Sn
-SnOx:F
-SnOx:Sb
-ZnOx:Ga
-ZnOx:B
-ZnOx:F
-ZnOx:Al
-Ag/TiOx
其中,依赖于掺杂浓度地,x处在1与2之间的范围内。
这样能导电的层可以示例性地利用下列方法之一而被施加到透明的基板上,所述方法为:
-CVD
-PVD
-喷雾热解
-溅射
-溶胶-凝胶法。
透明的基板优选为玻璃基板或塑料基板,特别是经硬化和/或被预加应力的玻璃基板。
钎焊材料优选为基于如下材料之一的钎焊料:
-锡-铅
-锡
-铅
-金
-铟
-铝。
在第一实施方案中,钎焊材料可施加到透明的基板的导电层上,方式为:钎焊材料在结构元件与透明的基板的导电层之间构造导电连接。
替代借助红外光进行的钎焊地,同样可行的是,能采用感应式钎焊。在感应式钎焊中,利用电磁感应效应来加热。在感应式钎焊中,感应器可通过合适的造型而有针对性地仅对钎焊部位进行加热。变化的电场带来变化的磁场,变化的磁场又通过电涡流场在待钎焊的结构元件中产生所必需的热量。
可使用的其他钎焊法有:激光钎焊法和超声波钎焊法。
可以考虑不同材料作为用于钎焊法的钎焊材料。可行的材料可以是基于锡-铅、锡、铅、金、铟或铝的材料。特别优选的是如下的钎焊材料,其锡合金含量为约90重量%且焊剂含量为10重量%。特别优选的是不含铅的钎焊材料。
附图说明
下文借助附图非限制性地介绍本发明。
其中:
图1a-1d示出在使用光(所谓的光钎焊)的情况下用于制备结构元件系统的典型的方法流程,所述结构元件系统具有位于透明的基板上的透明导电涂层以及布置于所述透明导电涂层上的结构元件,所述结构元件特别是指发光二极管。
具体实施方式
在图1a至1d中示出制备结构元件系统的方法流程,所述结构元件系统包括具有透明导电涂层的透明的基板以及位于透明导电涂层上的结构元件,所述结构元件特别是指发光二极管或LED模块。
在制备结构元件系统时,在所述实施方案中,例如基板1例如凭借溶胶-凝胶法被在整个面上涂以透明导电涂层(图1a)。优选的是,所述层不仅是导电透明层(例如ITO层),而且是吸热的导电透明层。所述透明的吸热层为氧化锡层,例如FTO(SnOx:F)或ATO(SnOx:Sb)。还可考虑的是:ZnOx:Ga、ZnOx:B、ZnOx:Al或Ag/TiOx,其中,依赖于掺杂浓度和化学计量,x处在1与2之间的范围内。
接下来,根据图1b例如借助激光来制造结构化部,所述激光局部地加热涂层并使涂层蒸发。
借助激光加以结构化的透明基板优选包括导电层,所述导电层在所用激光的激光波长范围内具有高吸收度,并且在该波长下是透射性的透明基板。在这样的系统中,玻璃层仅具有很少的损伤部。特别地,在这样的系统中,裂纹形成能尽可能得以避免。
在图1b通过附图标记11.1-11.3来标示出基板各区域的分界线。接着依照图1b的结构化部地,在区域13.1-13.4中布置有结构元件108(仅在区域13.1、13.2中示出)(图1c-1d)。所述结构元件指的是可在表面装配结构元件,所谓的SMD(表面贴装)结构元件,例如为LED芯片。在这里,所述结构元件通过自动化的钎焊法(特别是凭借红外射束的光钎焊)直接安设到导电的透明基板上(图1c)或通过连接焊盘(Anschlusspad)9安设到导电的透明基板上(图1d)。
作为设有导电涂层的基板(其中,所述导电涂层被结构化,并且用于传导电流)的替代地,透明的基板,例如玻璃基板可以设有金属带,例如薄的银带,以作为导电涂层。于是,构造为导体带的银带如此狭窄(例如仅几μm宽)地而且以如下相距地构造,即,该银带对于站在远处的观察者而言不易被察觉。
下面,对结构元件的安设方案加以阐释。
首先,应介绍结构元件的直接安设方案,正如图1c中所示的那样。
所述优选应用的方法指的是用光的单点钎焊,当结构元件仅以数个钎焊部位安设在基板上时,则通常优选总是应用光。在光钎焊的情况下,借助聚光镜和透镜将卤素灯(波长:500-1500nm,功耗:250W)的光聚焦到钎焊部位上。通过吸收热辐射产生在钎焊部位上所需要的温度。
特别优选的是,基板同时为吸热层和导电层,特别是氧化锡层,例如FTO(SnOx:F)或ATO(SnOx:Sb)。这样的层可以通过吸收接受如此多的热辐射,使得钎焊时间小于30秒,特别是小于10秒,特别是在1至10秒的范围内。对于功率为250W功率(波长:500-1500nm)而且具有被涂以SnO2:F的玻璃基板的卤素灯而言,依赖于通常从下方被透射照明的玻璃基板的厚度,得出如下钎焊时间:
基板厚度 钎焊时间
4mm 6.5秒
6mm 7.5秒
例如在光钎焊过程之前,将钎焊材料作为呈钎焊盘4形式的钎焊膏施加于如下部位上,结构元件应与基板或施加到基板上的导电层在所述部位上相连接。
钎焊膏是由钎焊金属粉末和焊剂组成的膏状混合物,并且主要用于对可在表面可安设的结构元件(SMD)加以钎焊。适用于SMD钎焊的钎焊膏例如其中约90%由锡合金小球组成,约10%由焊剂组成。不含铅的钎焊膏(RoHS)例如由96.5%Sn、3.0%Ag、0.5%Cu组成。钎焊膏可以凭借用涂料器直接施加到基板的导电层上(图1c)或者施加到连接焊盘上(图1d)。
借助卤素灯的光(特别是红外光)引入到钎焊盘4上的能量导致钎焊膏中包括的钎焊球熔化,所述钎焊球于是通过钎焊膏的颗粒的熔化而在导电涂层与构件或者说结构元件之间提供彼此之间的电连接和机械连接,以及与构件连接部或玻璃基板的导电层之间的电连接和机械连接(图1c)。在图1c中,导电涂层在四个区域中被加以结构化。仅在区域13.1中示出SMD构件108,SMD构件108通过钎焊盘4的熔化直接连接到导电涂层上。
钎焊膏中的焊剂使得熔化过程变得容易,方式为:焊剂降低了表面张力,阻止氧化,并且对可能存在的氧化物残余加以还原。焊剂随后被蒸发,并在构件与钎焊盘之间留下导电性良好的钎焊连接部。
之前所介绍的单钎焊法的优点总结如下:
-无碰触式的而且精确的热量传递
-在投资相对低的情况下,很低的运行成本。
当实现将连接焊盘9(参见图1d)安设到玻璃基板上时,则也可使用上面提及的光钎焊。
连接焊盘9包括导电膏或导电漆,例如银导电漆或银膏,所述导电膏或导电漆借助丝网印刷或筛网印刷施加于导电基板上,然后加以烧烙。通过烧烙可同时对透明的基板1,特别是透明的玻璃基板预加应力。由此,在单个方法步骤中实现高机械强度。
在使用连接焊盘的方法中,紧接在连接焊盘之后,用标准方法给不同区域13.1-13.4装备有SMD构件108,例如发光二极管。在装备之前,将钎焊膏施加到连接焊盘上。
接下来,给玻璃基板装备有结构元件。之后,如前所述借助光钎焊进行钎焊过程。在例如用卤素灯进行光钎焊时,将卤素灯的光聚焦于应当执行钎焊过程的部位上。从光源发射的红外射束对钎焊材料加热。钎焊材料被熔化并一方面润湿结构元件的连接部以及润湿连接焊盘。接下来,结束能量输入,并且钎焊材料硬化,从而在电结构元件与导电层之间构造材料配合的导电连接。
可以考虑之前所介绍的材料作为钎焊材料。可选的材料是基于如下所述的钎焊材料:
锡-铅
锡
铅
金
铟
铝
在通过根据本发明的钎焊过程将结构元件,特别是发光二极管与施加到透明的基板上的导体带进行导电连接之后,可继续加工带有结构元件的透明基板,例如配设另一个层。
Claims (33)
1.用于将电结构元件与至少一个导体带或导电层进行导电连接的方法,其中,所述导体带或所述导电层被施加于在可见光波长范围内基本上透明的基板上,其中,所述透明的基板包括吸热层,并且所述能导电层同时是所述吸热层,所述方法包括如下步骤:
在所述结构元件应与所述导电层或所述导体带连接的区域内,给所述电结构元件或所述导体带或所述导电层设有钎焊材料;向所述钎焊材料输送由发射电磁射束的能量源输出的自动化的能量,方式为:将所输送的能量在应固定有构件的部位上基本上引入到吸热的所述导体带或所述导电层中,从而所述钎焊材料熔化并在很短的钎焊时间之内在所述电结构元件与所述导体带或所述导电层之间构造不能松解的、材料配合的导电连接。
2.根据权利要求1所述的方法,其特征在于,所述钎焊时间短于30秒,特别是短于10秒,优选处在0.1秒与10秒之间,优选为1秒与10秒之间的范围内。
3.根据权利要求1至2之一所述的方法,其特征在于,所述能量源,特别是光源的所发射的电磁射束的波长处在500nm至1500nm的范围内。
4.根据权利要求1至3之一所述的方法,其特征在于,所述能量源是功耗在50W与1000W之间,特别是在100W与500W之间的卤素灯。
5.根据权利要求1至4之一所述的方法,其特征在于,所述能量源是激光光源。
6.根据权利要求1至5之一所述的方法,其特征在于,将所述电磁射束聚焦到焦斑上,其中,所述焦斑具有处在0.1mm至100mm,优选为1mm至10mm的范围内的直径。
7.根据权利要求1至6之一所述的方法,其特征在于,所述透明的基板具有上侧和底侧,其中,所述透明的能导电层被施加到所述上侧上,并且所述能量源的能量从所述底侧贯穿所述透明的基板输入至所述钎焊材料。
8.根据权利要求1至7之一所述的方法,其特征在于,所述能导电层包括选自下列金属氧化物中的一种或多种的金属氧化物:
-InOx:Sn
-SnOx:F
-SnOx:Sb
-ZnOx:Ga
-ZnOx:B
-ZnOx:F
-ZnOx:Al
-Ag/TiOx
其中,依赖于掺杂浓度地,x处在1与2之间的范围内。
9.根据权利要求7所述的方法,其特征在于,所述能导电层通过如下方法之一被施加到所述透明基板上:
-CVD
-PVD
-喷雾热解
-溅射
-溶胶-凝胶法。
10.根据权利要求1至9之一所述的方法,其特征在于,所述透明的基板是玻璃基板或塑料基板。
11.根据权利要求10所述的方法,其特征在于,所述透明的基板是玻璃基板,并且使所述玻璃基板硬化和/或对所述玻璃基板预加应力。
12.根据权利要求1至10之一所述的方法,其特征在于,通过如下方法制造钎焊连接:
光钎焊法,
感应式钎焊法。
13.根据权利要求1至12之一所述的方法,其特征在于,所述钎焊材料是基于下列材料之一的钎焊料:
-锡-铅
-锡
-铅
-金
-铟
-铝。
14.根据权利要求1至13之一所述的方法,其特征在于,所述钎焊材料被施加到所述透明的基板的所述导电层上;
所述钎焊材料在所述结构元件与所述透明的基板上的所述导电层之间构造导电连接。
15.根据权利要求1至13之一所述的方法,其特征在于,将连接部位安设到所述能导电层或所述导体带上,并且所述钎焊材料在所述结构元件与所述连接部位之间构造导电连接。
16.用于将电结构元件与至少一个导体带或导电层进行导电连接的方法,其中,所述导体带或所述导电层被施加于在可见光波长范围内基本上透明的基板上,所述方法包括如下步骤:在所述结构元件应与所述导电层或所述导体带连接的区域内,给所述电结构元件或所述导体带或所述导电层设有钎焊材料;向所述钎焊材料输送由能量源输出的自动化的能量,方式为:所述钎焊材料熔化并在所述电结构元件与所述导体带或所述导电层之间构造不能松解的、材料配合的导电连接。
17.根据权利要求16所述的方法,其特征在于,所述钎焊材料在所述结构元件与所述透明的基板之间直接构造导电连接。
18.根据权利要求16所述的方法,其特征在于,将连接部位安设到所述导电层或所述导体带上,并且所述钎焊材料在所述结构元件与所述连接部位之间构造导电连接。
19.根据权利要求16至18之一所述的方法,其特征在于,所述透明的基板具有上侧和底侧,其中,所述透明的能导电层被施加于所述上侧上,并且所述能量源的能量被从所述底侧贯穿所述透明的基板输入至所述钎焊材料。
20.根据权利要求16至19之一所述的方法,其特征在于,所述透明的基板包括吸热层。
21.根据权利要求20所述的方法,其特征在于,所述能导电层同时是所述吸热层。
22.根据权利要求16至21之一所述的方法,其特征在于,所述能导电层包括选自下列金属氧化物中的一种或多种的金属氧化物:
-InOx:Sn
-SnOx:F
-SnOx:Sb
-ZnOx:Ga
-ZnOx:B
-ZnOx:F
-ZnOx:Al
-Ag/TiOx
其中,依赖于掺杂浓度地,x处在1与2之间的范围内。
23.根据权利要求22所述的方法,其特征在于,所述能导电层凭借如下方法中的一种被施加到所述透明的基板上:
-CVD
-PVD
-喷雾热解
-溅射
-溶胶-凝胶法。
24.根据权利要求16至23之一所述的方法,其特征在于,所述透明的基板是玻璃基板或塑料基板。
25.根据权利要求24所述的方法,其特征在于,所述透明的基板是玻璃基板,并且使所述玻璃基板硬化和/或对所述玻璃基板预加应力。
26.根据权利要求16至25之一所述的方法,其特征在于,通过下列方法来制造钎焊连接:
-光钎焊法,
-感应式钎焊法。
27.根据权利要求16至26之一所述的方法,其特征在于,所述能量源是发射电磁射束的能量源。
28.根据权利要求27所述的方法,其特征在于,所述能量源是光源,特别是卤素灯。
29.根据权利要求16至28之一所述的方法,其特征在于,所述钎焊材料是基于下列材料之一的钎焊料:
-锡-铅
-锡
-铅
-金
-铟
-铝。
30.根据权利要求16至29之一所述的方法,其特征在于,在短时间内,优选短于30秒,特别是短于10秒,优选在1秒与10秒之间的范围内,向所述钎焊材料输送能量。
31.根据权利要求30所述的方法,其特征在于,所输送的是光能,其中,所述光能的波长处在500nm至1500nm的范围内。
32.根据权利要求31所述的方法,其特征在于,所输送的光能由卤素灯提供,其中,所述卤素灯具有100W与500W之间的功耗。
33.根据权利要求31至32之一所述的方法,其特征在于,所述光能被聚焦到焦斑上,其中,所述焦斑具有处在0.1mm至100mm,优选1mm至10mm的范围内的直径。
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