CN1264216C - 电路布置 - Google Patents

电路布置 Download PDF

Info

Publication number
CN1264216C
CN1264216C CNB021075689A CN02107568A CN1264216C CN 1264216 C CN1264216 C CN 1264216C CN B021075689 A CNB021075689 A CN B021075689A CN 02107568 A CN02107568 A CN 02107568A CN 1264216 C CN1264216 C CN 1264216C
Authority
CN
China
Prior art keywords
circuit arrangement
substrate
pcb
circuit board
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB021075689A
Other languages
English (en)
Other versions
CN1391279A (zh
Inventor
克里斯蒂·格尔
于尔根·斯泰格
保罗·穆里克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEMICRON ELECTRONIC CO Ltd
Original Assignee
SEMICRON ELECTRONIC CO Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10127947A external-priority patent/DE10127947C1/de
Application filed by SEMICRON ELECTRONIC CO Ltd filed Critical SEMICRON ELECTRONIC CO Ltd
Publication of CN1391279A publication Critical patent/CN1391279A/zh
Application granted granted Critical
Publication of CN1264216C publication Critical patent/CN1264216C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13034—Silicon Controlled Rectifier [SCR]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Structure Of Printed Boards (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Inverter Devices (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Rectifiers (AREA)

Abstract

本发明涉及一种电路布置(10)，包括基体(12)、衬底(16)、中间印刷电路板(24)、加压装置(28)和驱动电路。衬底(16)有正极印制导线(32)、负极印制导线(34)、交流电印制导线(36)和辅助接头(38、40)。构件(42)与这些印制导线和辅助接头触点接通。中间印刷电路板有正极直流接头(46)和负极直流接头(48)以及连接在它们之间的电容器。衬底配有要加以冷却的交流电连接元件(20)。正极直流接头和负极直流接头有接触元件(56或58)，用于与衬底的印制导线低感应式直接触点接通。相应地也适用于交流电连接元件。加压装置用于使正极及负极直流接头的接触元件以及交流电连接元件的接触元件(70)电触点接通。

Description

电路布置
技术领域
本发明涉及一种电路布置，它包括基体；至少一个衬底，衬底在其上侧有正极印刷导线、负极印制导线和交流电印制导线以及辅助接头；一些构件，如晶体管、闸流晶体管、二极管、电阻、集成电路或传感器，它们至少部分地与这些印制导线触点接通；中间印刷电路板，它有正极直流接头、负极直流接头和至少一个连接在正极直流接头与负极直流接头之间的电容器；以及包括至少一个交流电接头。
背景技术
老的专利申请DE 100 37533.2说明了一种寄生电感小的电路布置，它包括一个电绝缘衬底和在衬底上彼此电绝缘的金属印制导线和装在其上的断路器。在那里，断路器有一些大功率晶体管，它们优选地由MOSFET或IGBT构成。
这样一种电路布置工作时在中间电路内、衬底上和在交流电连接元件上产生热量。中间电路的冷却按现有技术通过构件处的对流进行。衬底的热量通过与冷却件的直接接触导出。交流电连接元件的热量按现有技术同样通过对流散出。交流电连接元件的温升在那里导致增大欧姆电阻并因而降低载流能力。此外在至少一个的交流电连接元件上可能例如设传感器，它们的功能受温升的影响。
发明内容
本发明的目的是创造一种前言所述类型寄生电感小的电路布置，同时，制造成本亦即装配费用低，它有杰出的抗振动和耐冲击强度，以及它允许更好地将在中间电路内和/或在连接元件上产生的热量传给冷却件。
为此，本发明提出一种电路布置，包括：一基体；至少一个衬底，衬底在其上侧有一正极印制导线、一负极印制导线和一交流电印制导线以及辅助接头；一些构件，它们至少部分地与印制导线和与辅助接头触点接通；一块中间印刷电路板，它有一正极直流接头和一负极直流接头和至少一个连接在正极直流接头与负极直流接头之间的电容器；以及包括至少一个交流电连接元件，其特征为：中间印刷电路板有用于与所述至少一个衬底的正极印制导线及负极印制导线直接低感应式触点接通的接触元件，以及，为中间印刷电路板和所述至少一个衬底配设一个所属的带接触元件的交流电连接元件；设有一加压装置，用于使所述中间印刷电路板的及所述至少一个交流电连接元件的接触元件与所述至少一个衬底的相应的印制导线电触点接通；该电路布置还具有连接插头，所述至少一个交流电连接元件具有连接片，其中，至少一个连接插头有脚，它通过一导热的电绝缘体装在一冷却件上，和/或至少一个连接片有一些分区，它们通过一导热的电绝缘体与一冷却件有热接触。
此目的在前言所述类型的电路布置中按本发明通过至少下列布置之一达到：
·中间印刷电路板有用于与至少一个的衬底的正极印制导线和负极印制导线直接低感应式触点接通的接触元件，为中间印刷电路板和至少一个的衬底配设一所属的带接触元件的交流电连接元件，以及，设加压装置，用于将中间印刷电路板和至少一个的交流电连接元件的接触元件与至少一个的衬底所属的印制导线电触点接通。
·至少一个用于外部电触点接通的连接插头借助一导热的电绝缘体被置于与一冷却件热接触。
·至少一个的电流接头的内部连接片有一些分区，连接片借助它们通过一导热的电绝缘体与冷却件形成连接。
·有至少一个要冷却的电容器的中间印刷电路板有一些接触元件，用于与至少一个的衬底的正极印制导线和负极印制导线直接触点接通。
在按本发明的电路布置中，优选地设三个用于交流电三个相(U、V、W)的衬底。这种电路布置有交流电接头。
因为按本发明的电路布置通常涉及大功率级的电路布置，所以优选地将基体装在一冷却件上，以及至少一个的衬底以其下侧与冷却件导热地触点接通。为此目的，至少一个的衬底下侧镀金属或加金属镀层，衬底通过它大面积地贴靠在基体或冷却件上。基体设计成框架状和有至少一个用于一个所属衬底的分格。
为了使电路布置比较简单和可用较低的制造成本实现，按本发明中间印刷电路板包括一个有正极直流接头的第一金属平面元件和一个有负极直流接头的第二金属平面元件，它们彼此电绝缘，其中，中间印刷电路板至少一个的电容器的连接元件与所属的金属平面元件触点接通，以及中间印刷电路板的接触元件与至少一个的衬底的所属金属平面元件设计成一体。正极直流接头与负极直流接头的金属平面元件按有利的方式可例如用铜的薄板冲压并经适当弯曲构成。以此方式获得一种有一可简便和经济地实现的中间印刷电路板的电路布置，这些优点带来一种紧凑的、机械上牢固的以及低感应的结构。正极直流接头与负极直流接头的金属平面元件的电绝缘，可借助一形状简单的电绝缘材料制的平面元件实现。为了直流和交流电接头的外部电连接，在基体上设连接插头以及在相应的连接元件中设孔。
另一种可能性例如在于设一中间印刷电路板，它在其一个主表面上有一与正极直流接头连接的金属镀层，以及在其处于相对位置的第二主表面上有一个负极直流接头连接的金属镀层，在这种情况下中间印刷电路板的接触元件设计有触指，接触元件借助它们与中间印刷电路板相配地触点接通。相应地，至少一个的交流电接头可设接触元件，它们同样设计有触指，以便使接触元件与至少一个的交流电连接元件触点接通。不过这样一种插塞式触点接通引起不可忽略的装配费用，因此优选的是，中间印刷电路板的两个直流接头的接触元件与相应的金属平面元件设计成一体，以及至少一个的交流电连接元件的接触元件也与之设计成一体。
在按本发明的电路布置中业已证实有利的是，中间印刷电路板的连接元件和至少一个的交流电连接元件与至少一个的衬底所属的印制导线的电触点接通借助加压装置实现，加压装置有一形状稳定的加压体和一个弹性有限的、面积尺寸与加压体相配的加压元件。在形状稳定的优选地用金属制成的加压体与弹性有限的加压元件之间，恰当的是设一用电绝缘材料制的中间体，它以一些小管状贯穿件通过形状稳定的加压体延伸。在按本发明的电路布置的加压装置上可设一驱动电路，其中，接触线元件穿过加压装置延伸，它们与至少一个的衬底的所属印制导线和辅助接头在压力下触点接通。
附图说明
由下面对附图表示的按本发明的电路布置的一种实施例的说明中可知其他详情、特征及优点。其中：
图1电路布置重要部分的立体图，其中基体有三个用于交流电三个相的衬底，以及，中间印刷电路板被画为与配备有衬底的框架状基体隔开距离；
图2图1所示电路布置的衬底立体图；
图3图1所示电路布置的中间印刷电路板的立体分解图；
图4图1所示电路布置的交流电连接元件的立体图；
图5电路布置的加压装置立体分解图，该加压装置在图1的电路布置中未示出；
图6电路布置的局部立体图，包括按本发明的一个电流连接元件的设计以及按本发明的一个连接插头的设计；
图7基体的局部立体图以及按本发明的一个连接插头的设计。
具体实施方式
图1表示有一基体12的电路布置10结构的重要部分。框架状基体12装在一冷却件上，它有三个互相分开的分格14。每个分格14规定用于一个衬底16。在图2中表示了这样一个衬底16并在后面再详细说明。
从基体12向上竖立一些插头18，它们设置用于分别为所属的交流电连接元件20准确定位。在图4中表示了这样一个交流电连接元件20并在后面还要详细说明。
此外还有两个插头22从基体12向上竖立，它们规定用于中间印刷电路板24的准确定位。在图3的透视分解图中表示了这样一个中间印刷电路板24-没有所属的电容器-并在后面再详细说明。
螺纹套26整体式地从基体12向上竖立，它们用来将图5中透视分解地表示的加压装置28固定在基体12上。
这一个或每一个衬底16在其上侧30有正极印制导线32、负极印制导线34、设在它们之间的交流电印制导线36以及辅助接头38和40。一些构件42，例如大功率晶体管或大功率二极管，与印制导线32、34、36和与辅助接头38及40触点接通。这种触点接通例如借助于压焊丝44实现。
中间印刷电路板24的正极直流接头48与各自的衬底16的正极印制导线34触点接通。中间印刷电路板24(也可见图3)的负极直流接头48与各自的衬底16的负极印制导线34触点接通。为此目的，中间印刷电路板24包括一个有正极直流接头46的第一金属平面元件50和一个有负极直流接头48的第二金属平面元件52，在它们之间设一个面积与金属平面元件50和52相配的绝缘元件54，如图3所示。
金属平面元件50和金属平面元件52分别涉及导电金属如铜制的冲压板，其中，从用于正极直流接头46的金属平面元件50整体式伸出一些接触元件56。接触元件56沿长的金属平面元件50的横向定向并与金属平面元件50相交成直角。接触元件56借助于加压装置28压靠在各自的衬底16的正极印制导线32上。
从负极直流接头48的金属平面元件52沿纵向定向地垂直伸出接触元件58，它们借助于加压装置28压靠在各自的衬底16的负极印制导线34上。
正极直流接头46的金属平面元件50设计有接触孔60，用于导电地触点接通中间印刷电路板24的图中未画之电容器相应的连接元件。负极直流接头48的金属平面元件52设有接触孔62，用于中间印刷电路板24的图中未画之电容器的负极连接元件。绝缘元件54设计有与之相配的通孔64，用于中间印刷电路板24的电容器的连接元件。
通过由带有直接设在其上的接触元件56、58的金属平面元件50、52和绝缘元件54组成的中间印刷电路板24紧邻地排列，以及通过直接处于冷却件上的衬底16，在设在中间印刷电路板24上的电容器与冷却件之间形成非常有效的热接触。其结果是允许有效地散出在中间电路内产生的热量。
正极直流接头46设计有一孔66，从基体12向上竖立的其中一个插头22穿过它延伸。负极直流接头48设计有一孔68，基体的另一个插头22穿过它延伸。
图4透视地表示交流电连接元件20，它设计为薄板冲压件，包括用于正极直流接头46的接触元件70(该接触元件类似于金属平面元件50的接触元件56)和连接片72。各交流电连接元件20的连接片72设计有孔74，基体12相应的插头18在组合状态穿过它延伸。在连接片72内还有另一个孔104用于安装电流传感器114(也可见图1)。各交流电连接元件20的接触元件70与各自的衬底16的交流电印制导线36触点接通。用于中间印刷电路板24正极直流接头46和负极直流接头48的金属平面元件50和52的接触元件56和58，用来与电路布置10各自的衬底16所属的印制导线32和34直接低感应式地触点接通。
连接片72围绕着用于电流传感器114的孔104的区域需要有效地散热，因为一方面温度过高影响电流传感器的工作，以及另一方面连接片72过高的温度增大了连接片的欧姆电阻，减小最大电流通过能力并因而直接降低电路布置的工作能力。
图5用透视分解图表示电路布置10(见图1)加压装置28的结构。加压装置28有一弹性有限的加压元件76和一个形状稳定的加压体78。在弹性有限的加压元件76与按基本面积与之相配的形状稳定的加压体78之间设一个由电绝缘材料制的中间体80，从中间体伸出绝缘套82。在加压装置28的组合状态，这些绝缘套82穿过形状稳定的加压体78相应的孔84以及在加压元件76的孔86及缺口88中延伸。形状稳定的加压体78例如用金属制成，它设计有例如用于埋头螺钉的沉孔90。沉孔90叠合地设有从基体12伸出的螺纹套26，以便借助于提及的埋头螺钉将加压装置28固定在基体12上，与此同时借助加压装置28使中间印刷电路板24与衬底16相配地触点接通。
接触线元件92通过加压装置28的中间体80上的绝缘套82延伸，它们的上端以接触段94从绝缘套82略微伸出，而销钉状下端段96从绝缘套82下端伸出。在电路布置10的组合状态，接触线元件92上端的接触段94与定位在加压装置28上的(图中未表示的)驱动电路所属的接触部位触点接通。接触线元件92的销钉状下端段96则与各自的衬底16所属的印制导线和辅助接头触点接通。
图6表示改善从连接片72的区域散热的详细情况。为些在基体12中在连接片的所在区域内设计槽112。这些槽设计为能在其中安装具有小的热阻的电绝缘体100(例如云母或氧化铝)。现在沿两个途径实现散热，虽然每一个途径已经达到降低连接片72温度的目的，但仍有利地使用两者来散热：
·在连接片72的两个相对侧，分区106按这样的方式折角，即，使它们在组合后与绝缘体100处于直接热接触状态。绝缘体100又与冷却件102直接热接触。
·插头18设计为由一个优选地带螺纹108的连接区和脚110组成，其中，脚110与电绝缘体100有直接的热接触，绝缘体本身与冷却件102有直接的热接触。连接插头18和连接片72导电连接，以便能实现外部的交流电连接。
图7是从冷却件的方向观察的交流电连接的分解图。槽112设计为使导热的电绝缘体100在连接插头18的脚110和连接片72折角的分区106这一侧(也可见图4)与冷却件102那一侧之间构成热接触。
                附图标记表
10电路布置
12基体(10的)
14分格(12的)
16衬底(在14内)
18插头(在12上用于20)
20交流电连接元件(10的)
22插头(在12上用于46、48)
24中间印刷电路板(10的)
26螺纹套(在12上用于28)
28加压装置(10的)
30上侧(16的)
32正极印制导线(在30上)
34负极印制导线(在30上)
36交流电印制导线(在30上)
38辅助接头(在30上)
40辅助接头(在30上)
42构件(在16上)
44压焊丝(在42上)
46正极直流接头(24的)
48负极直流接头(24的)
50金属平面元件(46的)
52金属平面元件(48的)
54绝缘元件(24的，在50与52之间)
56接触元件(在50上)
58接触元件(在52上)
60接触孔(在50内)
62接触孔(在52内)
64通孔(在54内)
66孔(在46内)
68孔(在48内)
70接触元件(20的)
72连接片(20的)
74孔(在72内)
76弹性有限的加压元件(28的)
78形状稳定的加压体(28的)
80中间体(28的，在76与78之间)
82绝缘套(80的)
84孔(在78内)
86孔(在76内)
88缺口(在76内)
90沉孔(在78内)
92接触线元件(在82内)
94接触段(92的)
96销钉状端段(92的)
100绝缘体
102冷却件
104孔(在72内)
106分区(连接片72的)
108螺纹(连接插头18的)
110脚(连接插头18的)
112槽(12的)
114电流传感器

Claims (13)

1.电路布置，包括：一基体(12)；至少一个衬底(16)，衬底在其上侧(30)有一正极印制导线(32)、一负极印制导线(34)和一交流电印制导线(36)以及辅助接头(38、40)；一些构件(42)，它们至少部分地与印制导线(32、34、36)和与辅助接头(38、40)触点接通；一块中间印刷电路板(24)，它有一正极直流接头(46)和一负极直流接头(48)和至少一个连接在正极直流接头(46)与负极直流接头(48)之间的电容器；以及包括至少一个交流电连接元件(20)，其特征为：中间印刷电路板(24)有用于与所述至少一个衬底(16)的正极印制导线(32)及负极印制导线(34)直接低感应式触点接通的接触元件(56、58)，以及，为中间印刷电路板(24)和所述至少一个衬底(16)配设一个所属的带接触元件(70)的交流电连接元件(20)；设有一加压装置(28)，用于使所述中间印刷电路板(24)的及所述至少一个交流电连接元件(20)的接触元件(56、58、70)与所述至少一个衬底(16)的相应的印制导线(32、34、36)电触点接通；该电路布置还具有连接插头(18、22)，所述至少一个交流电连接元件(20)具有连接片(72)，其中，至少一个连接插头(18、22)有脚(110)，它通过一导热的电绝缘体(100)装在一冷却件(102)上，和/或至少一个连接片(72)有一些分区(106)，它们通过一导热的电绝缘体(100)与一冷却件(102)有热接触。
2.按照权利要求1所述的电路布置，其特征为：设三个用于交流电三个相的衬底(16)。
3.按照权利要求1所述的电路布置，其特征为：基体(12)装在冷却件上；以及，所述至少一个衬底(16)以其下侧与基体(12)导热地触点接通。
4.按照权利要求1所述的电路布置，其特征为：中间印刷电路板(24)包括一个有正极直流接头(46)的第一金属平面元件(50)和一个有负极直流接头(48)的第二金属平面元件(52)，它们彼此电缘绝，其中，所述至少一个电容器的连接元件与中间印刷电路板(24)所属的金属平面元件(50、52)触点接通，以及中间印刷电路板(24)的接触元件(56、58)与所属的金属平面元件(50、52)设计成一体。
5.按照权利要求1所述的电路布置，其特征为：所述至少一个交流电连接元件(20)与所属的接触元件(70)设计成一体。
6.按照权利要求1所述的电路布置，其特征为：所述构件(42)是大功率二极管、大功率晶闸管、大功率晶体管、传感器、电阻和/或它们的组合。
7.按照权利要求1所述的电路布置，其特征为：所述加压装置(28)有一个形状稳定的加压体(78)和一个弹性有限的、面积尺寸与加压体(78)相配的加压元件(76)。
8.按照权利要求1所述的电路布置，其特征为：在加压装置(28)上设驱动电路，其中，接触线元件(92)穿过加压装置(28)延伸，它们与驱动电路和与至少一个的衬底(16)所属的印制导线(32、34、36)以及辅助接头(38、40)在压力下触点接通。
9.按照权利要求1所述的电路布置，其特征为：所述导热的电绝缘体(100)用陶瓷材料制成。
10.按照权利要求1所述的电路布置，其特征为：所述连接插头(18)在其背离其脚(110)的部分有螺纹(108)。
11.按照权利要求1所述的电路布置，其特征为：所述连接片(72)的分区(106)通过连接片的折角部分在自身上构成。
12.按照权利要求1所述的电路布置，其特征为：连接插头(18、22)埋入基体(12)中并与连接片(72)导热和导电地连接。
13.按照权利要求4所述的电路布置，其特征为：衬底(16)、接触元件(56、58)和金属平面元件(50、52)紧邻地排列，以及在所述至少一个电容器与用于冷却此至少一个电容器的冷却件之间构成一直接的导热且电绝缘的连接。
CNB021075689A 2001-06-08 2002-03-15 电路布置 Expired - Lifetime CN1264216C (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE10127947.7 2001-06-08
DE10127947.4 2001-06-08
DE10127947A DE10127947C1 (de) 2001-08-22 2001-06-08 Schaltungsanordnung
DE10141114A DE10141114C1 (de) 2001-06-08 2001-08-22 Schaltungsanordnung
DE10141114.6 2001-08-22

Publications (2)

Publication Number Publication Date
CN1391279A CN1391279A (zh) 2003-01-15
CN1264216C true CN1264216C (zh) 2006-07-12

Family

ID=26009493

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021075689A Expired - Lifetime CN1264216C (zh) 2001-06-08 2002-03-15 电路布置

Country Status (6)

Country Link
US (1) US6654249B2 (zh)
EP (1) EP1265282B1 (zh)
JP (1) JP4095825B2 (zh)
KR (1) KR100820513B1 (zh)
CN (1) CN1264216C (zh)
DE (1) DE10141114C1 (zh)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7327024B2 (en) * 2004-11-24 2008-02-05 General Electric Company Power module, and phase leg assembly
DE102005036105B3 (de) 2005-08-01 2006-11-16 Semikron Elektronik Gmbh & Co. Kg Elektrisches Bauteil
JP4603956B2 (ja) * 2005-08-26 2010-12-22 日立オートモティブシステムズ株式会社 電力変換装置
DE102006006425B4 (de) * 2006-02-13 2009-06-10 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul in Druckkontaktausführung
DE102006006423B4 (de) * 2006-02-13 2009-06-10 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul und zugehöriges Herstellungsverfahren
DE102007007224B4 (de) * 2007-02-14 2009-06-10 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einem Gehäuse
DE102008018841A1 (de) 2008-04-15 2009-10-22 Conti Temic Microelectronic Gmbh Verfahren zur Herstellung und Aufbau eines Leistungsmoduls
DE102009017621B3 (de) * 2009-04-16 2010-08-19 Semikron Elektronik Gmbh & Co. Kg Vorrichtung zur Verringerung der Störabstrahlung in einem leistungselektronischen System
CN101998783A (zh) * 2009-08-18 2011-03-30 深圳富泰宏精密工业有限公司 壳体
JP5338803B2 (ja) * 2010-01-22 2013-11-13 株式会社デンソー 電力変換装置
DE102012202673A1 (de) 2012-02-22 2013-08-22 Siemens Aktiengesellschaft Leistungselektronikmodulsystem
LU92932B1 (en) * 2015-12-24 2017-07-21 Iee Sa Flat Built Temperature Control Unit for Battery Temperature Monitoring
US10021802B2 (en) * 2016-09-19 2018-07-10 General Electric Company Electronic module assembly having low loop inductance
DE102019205236A1 (de) * 2019-04-11 2020-10-15 Zf Friedrichshafen Ag Sensorvorrichtung, Basisteil und Stromschienen-Sensor-Anordnung
CN111867237B (zh) * 2020-08-21 2024-02-20 上海无线电设备研究所 一种大绑线结构的刚性印制板
CN113765416B (zh) * 2021-09-23 2024-09-17 上海电气集团股份有限公司 一种通用型拓扑结构可变的功率单元及其构建方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0064856B1 (en) * 1981-05-12 1986-12-30 LUCAS INDUSTRIES public limited company A multi-phase bridge arrangement
US4965710A (en) * 1989-11-16 1990-10-23 International Rectifier Corporation Insulated gate bipolar transistor power module
JP2725952B2 (ja) * 1992-06-30 1998-03-11 三菱電機株式会社 半導体パワーモジュール
JP2896295B2 (ja) * 1993-09-28 1999-05-31 株式会社東芝 半導体モジュール装置
US5923085A (en) * 1996-05-02 1999-07-13 Chrysler Corporation IGBT module construction
DE19645636C1 (de) * 1996-11-06 1998-03-12 Telefunken Microelectron Leistungsmodul zur Ansteuerung von Elektromotoren
US6078501A (en) * 1997-12-22 2000-06-20 Omnirel Llc Power semiconductor module
US6359331B1 (en) * 1997-12-23 2002-03-19 Ford Global Technologies, Inc. High power switching module
US6166464A (en) * 1998-08-24 2000-12-26 International Rectifier Corp. Power module
US6249024B1 (en) * 1998-12-09 2001-06-19 International Rectifier Corp. Power module with repositioned positive and reduced inductance and capacitance
DE19942770A1 (de) * 1999-09-08 2001-03-15 Ixys Semiconductor Gmbh Leistungshalbleiter-Modul
DE19942915A1 (de) * 1999-09-08 2001-03-15 Still Gmbh Leistungshalbleitermodul
JP4142227B2 (ja) * 2000-01-28 2008-09-03 サンデン株式会社 車両用電動圧縮機のモータ駆動用インバータ装置
DE10037533C1 (de) 2000-08-01 2002-01-31 Semikron Elektronik Gmbh Induktivitätsarme Schaltungsanordnung

Also Published As

Publication number Publication date
KR100820513B1 (ko) 2008-04-10
KR20020095069A (ko) 2002-12-20
JP4095825B2 (ja) 2008-06-04
JP2003069261A (ja) 2003-03-07
US6654249B2 (en) 2003-11-25
EP1265282B1 (de) 2011-05-25
DE10141114C1 (de) 2002-11-21
EP1265282A3 (de) 2005-05-25
CN1391279A (zh) 2003-01-15
EP1265282A2 (de) 2002-12-11
US20020186543A1 (en) 2002-12-12

Similar Documents

Publication Publication Date Title
CN1264216C (zh) 电路布置
CN100373604C (zh) 高功率mcm封装
US7535076B2 (en) Power semiconductor device
US9165856B2 (en) Coupling assembly of power semiconductor device and PCB and method for manufacturing the same
US8054641B2 (en) Electronic unit
WO2016027557A1 (ja) 電力変換装置
CN1855476A (zh) 半导体装置
US8040707B2 (en) Power converter
EP2690658A1 (en) Power semiconductor module and power unit device
CN1467828A (zh) 半导体器件
CN109995246B (zh) 开关电源装置
CN213485244U (zh) 控制器以及具有其的电动代步车
CN100345290C (zh) 半导体器件
US9258882B2 (en) Electronic devices comprising printed circuit boards
CN1211817C (zh) 陶瓷电容器装配结构
CN1239060C (zh) 元件安装基板及其制造方法
CN214588842U (zh) 一种功率芯片压接封装结构
CN211350619U (zh) 双面散热功率模块
WO2020152898A1 (ja) パワー半導体装置
CN1559091A (zh) 电池组及其所用的温度调节装置
JP2019030040A (ja) スイッチング電源装置
JP7005781B2 (ja) 電子装置
JP6685020B2 (ja) スイッチング電源装置
JP6973023B2 (ja) 半導体装置
JP2007150347A (ja) セラミックコンデンサ実装構造

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20060712