CN1260791C - 用于装配半导体芯片的拾取工具 - Google Patents
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Abstract
对于一种带有由可弹性变形材料制成的吸气机构(4)的拾取工具(1),用于拾取半导体芯片(2)的表面(6)被加工成凸面。在放置半导体芯片(2)到已经装配好的半导体芯片(14)上时,半导体芯片(2)的中心首先压紧。在逐步形成的压力作用下凸面(6)逐渐变形,直到凸面和拾取的半导体芯片(2)平直为止。压力是从吸气机构(4)的中心向外逐步形成。通过这个过程,半导体芯片(2)被碾压到下面的半导体芯片(14)上,其中空气可以不断地溢出。
Description
技术领域
本发明涉及一种用于装配半导体芯片的拾取工具。这种工具的术语称为“芯片夹头”或“芯片粘合工具”。
背景技术
半导体芯片的装配过程中,从晶片上切开并粘到薄片上的半导体芯片被拾取工具拾起并放置到基片上。这种拾取工具主要包括金属轴和连接在金属轴上面的吸气机构。吸气机构具有朝向待取半导体芯片的空腔,通过钻孔可以将真空应用到空腔上。一旦吸气机构停留在半导体芯片上,真空使得半导体芯片吸附到吸气机构上。在行业中,吸气机构称为拾取工具或者橡胶嘴(rubber tip)。
半导体芯片也被装配到彼此的上面,行业中将这种装配到彼此上面的半导体芯片称为“叠层芯片”。通常,和传统的方法一样,通过由环氧树脂制成的粘合剂,首先将第一芯片装配到基片上。第二半导体芯片装配到第一半导体芯片上则是通过第二半导体芯片背面的粘合剂薄膜进行的。这里,在一个带有第二半导体芯片的晶片的背面涂敷上粘合剂,然后将晶片粘贴到薄片上并将其切开为单个的第二半导体芯片。随后,采用拾取和装配系统将第二半导体芯片拾起,并在100到150℃的温度范围内通过加压将第二半导体芯片层压到第一半导体芯片上。这种装配过程在行业中称为“预涂敷芯片工艺”或者“薄膜粘合”。该方法的优点在于粘合剂薄膜的厚度一致,因此装配的半导体芯片不发生倾斜。而且,粘合剂涂敷在第二半导体芯片的整个背面,因此没有气孔的危险以及在第二半导体周围没有粘合剂带。这使得可直接在第一半导体芯片上邻近第二半导体芯片为用于连接两个半导体芯片的焊丝提供连接区(焊盘)。
为了避免在装配时对半导体芯片甚至最小的损害,使用吸气机构由橡胶制成的拾取工具。橡胶有另外的优点,就是它很好地密封空腔,从而以相对大的吸力使半导体芯片能够从薄片上分离出来。
为了节省空间,半导体芯片制得越来越薄。然而,对于大约150μm的厚度,可能发生由拾取工具拾起的半导体芯片发生弯曲的情况,因为半导体芯片是被真空产生的压力压到吸气口上的。对于100μm的厚度,这是没有例外的事实。在将半导体芯片放置到下面的半导体芯片上时,由于弯曲的芯片首先在边缘处接触第一半导体芯片,因此不受欢迎的气泡在第二半导体芯片下形成,而且在两个半导体芯片间形成的空腔是密封的,因此聚集的空气再不能溢出。
发明内容
本发明的目的就是开发一种可以没有任何困难地装配薄半导体芯片的拾取工具。
任务通过使用一种拾取工具得以成功地解决,这种拾取工具有一个由可弹性变形材料制成的吸气机构,吸气机构上用于拾取半导体芯片的表面是凸面。为了提供真空,吸气机构上用于拾取半导体芯片的表面具有,例如,可以将真空应用到上面的、排列在边缘区域的开口。作为选择,吸气机构还具有至少一个被多孔材料填充的空腔,经由空腔真空被送到凸面上。在放置半导体芯片到以及装配好的半导体芯片上时,在逐渐增加的压力作用下,凸面逐渐变形直到凸面和拾取的半导体芯片平直为止。压力是从吸气机构的中心向外逐步形成。通过这个过程,半导体芯片被碾压到下面的半导体芯片上,其中空气可以不断地溢出。
因而,在该装配过程中,在放置到装配好的半导体芯片上之前,吸气机构拾取的半导体芯片成为凸起的形状,然后在装配过程的最后阶段回复到正常形状。
一种用于将第二半导体芯片装配到第一半导体芯片之上的方法,其中第二半导体芯片的背面涂敷有一层粘合剂薄膜,该方法包含以下步骤:
-使用包括凸起形状表面的吸气机构的拾取工具将半导体芯片拾起,凸起形状表面用作使第二半导体芯片变形成凸起形状;
-降低拾取工具以将第二半导体芯片放置到第一半导体芯片上,从而第二半导体芯片的中心首先压到第一半导体芯片上;
-逐步形成使吸气机构发生变形的压力,从而使得正常的凸面变平,以及
-将没有第二半导体芯片的拾取工具升高。
附图说明
在下文中将基于附图更详细地解释本发明的实施例。图例没有按比例给出而是直观表明本发明的实质。
图1为拾取工具的横截面,拾取工具有吸气机构,吸气机构上有用于装配半导体芯片的凸面,
图2A,B为凸面的平面视图,
图3为第二种拾取工具的横截面,
图4A为第三种拾取工具的横截面,
图4B为第三种拾取工具凸面的平面视图,以及
图5,6为装配过程中的简要说明。
具体实施方式
图1所示为拾取工具1的横截面,该拾取工具1已经拾起半导体芯片2。拾取工具包含轴3和吸气机构4,吸气机构4采用可弹性变形的材料比如橡胶制成并固定在轴3上。由尺寸稳定材料制成的板5被附在轴3的下端。通常,轴3和板5做成一体。板5支撑吸气机构4以传递放置半导体芯片2时整个吸气机构4上由轴3产生的压力,以及阻止吸气机构4向板5的方向向上弯曲。根据本发明,吸气机构4朝向半导体芯片2的表面6做成凸面。凸面的凸起程度,也就是凸面6中心和边缘之间的高度差,采用字符H标出。利用通过轴3内纵向钻孔7传送到凸面6的真空,吸气机构4吸住半导体芯片2。接下来,对两个具体实施方式进行说明,这两个具体实施方式中真空提供的方式不同。
实例1
该具体实施方式中,吸气机构4面对半导体芯片2的凸面6有可以用于供给真空的开口8。开口8靠近表面6的边缘排列,而且表面6的中心没有开口。图2A和图2B所示为表面6的平面视图。开口8,例如,与狭长切口10平行,狭长切口10沿吸气机构4的边缘9分布,如图2A所示,或者如图2B所示,包含大量排列在边缘9区域的钻孔11。
图2A还示出了笛卡儿坐标系,坐标轴以X和Y表示。表面6或者形成为单一方向相关的凸面,例如X方向,或者形成为与X和Y方向相关的凸面。
图3所示为拾取工具1的具体实施方式,对于该拾取工具1,真空通道18在轴3和板5内部尽可能长地延伸。在吸气机构4中,真空管道18仅在垂直方向上延伸。在这种方法中,吸气机构4中心区域的机械稳定性得到提高。
实例2
基于图4A和4B说明的具体实施方式中,吸气机构4具有由多孔材料填充的空腔12,向该空腔施加真空。空腔12位于,例如,在吸气机构4表面6的中心。
在提供根据实例1的狭长切口10和/或钻孔11时,存在进一步使用多孔材料填充狭长切口10和/或钻孔11的可能性。
图5和图6各自示出了将半导体芯片2放置到半导体芯片14的上面的过程瞬态图,半导体芯片14已经装配到基片13的上面,其中未提供拾取工具1的细节。粘合剂薄膜15粘贴到半导体芯片2的背面。下文中,半导体芯片2的意思是指半导体芯片2以及其背面粘贴的粘合剂薄膜15。由于开口8(图1)中真空的作用,使半导体芯片2自身适应于吸气机构4的凸面6的曲率。因此,半导体芯片2的中心首先压紧到半导体芯片14上。这种情况呈现在图5中。当拾取工具1的轴3进一步降低时,压力逐渐形成并导致吸气机构4及其凸面6变形增大,直到半导体芯片2平直地放置到半导体芯片14上。这种情况呈现在图6中。由于表面6凸起的形状,压力由吸气机构4的中心向外逐渐形成。通过这个过程,半导体芯片2被碾压到半导体芯片14上,其中空气可以不断地溢出。半导体芯片2的边缘16只是在最后才压紧到半导体芯片14上。为了使粘合剂薄膜显示出粘合性,通常将基片13加热到必要的温度。在传统的方法中,一旦半导体芯片14被粘合剂带17围绕,这样的带将不能与半导体芯片2粘合在一起。
吸气机构4的表面6的凸起程度数量级最好为粘合剂薄膜15厚度的一半。因此,例如,对于厚度为60μm的粘合剂薄膜15,表面6中心和边缘的高度差H(图1)为大约30μm。
因为,与表面6的尺寸(典型为10mm*10mm)相比,表面6的凸起度相对很小,因此,当吸气机构4本身,一方面,具有必要的刚度或硬度,另一方面,具有对于放置半导体芯片2所必需的必要的弹性,从而使表面6从未负载的凸起状态(图5)转变为平坦状态(图6),此时可省略板5。
在从图5所示的半导体芯片2压到半导体芯片14上到图6所示的半导体芯片2平放到半导体芯片14上的过渡阶段,拾取工具1的降低可以,例如,按恒定的速度或者按与理想的压力或力形成曲线相适应的速度进行。
Claims (6)
1、用于装配半导体芯片的拾取工具(1),包括
轴(3),和
与所述轴(3)连结在一起的吸气机构(4),吸气机构(4)由可弹性变形材料制成并包含用于拾取半导体芯片(2)的表面(6),所述表面(6)在未承载时为凸面,并且在放置半导体芯片(2)时,所述表面(6)在压力下变形为平面形状。
2、根据权利要求1的拾取工具,其中用于拾取半导体芯片(2)的吸气机构(4),表面(6)具有排列在边缘(9)区域的、可向其施加真空的开口(8),而且该表面(6)的中心没有开口。
3、根据权利要求2的拾取工具(1),其中开口(8)被多孔材料填充。
4、根据权利要求1的拾取工具(1),其中吸气机构(4)至少具有一个被多孔材料填充的空腔(12),可向该空腔施加真空。
5、根据权利要求1至4中任一项的拾取工具(1),其中用于支撑吸气机构(4)的板(5)配置在轴(3)的下端。
6、用于将第二半导体芯片(2)装配到第一半导体芯片(14)上的方法,第二半导体芯片(2)的背面涂敷有粘合剂薄膜(15),该方法包含以下步骤:
使用包括吸气机构(4)的拾取工具拾取第二半导体芯片(2),该吸气机构(4)由可弹性变形材料制成并具有用于使第二半导体芯片(2)变形为凸起形状的凸面(6);
降低拾取工具以将第二半导体芯片(2)放置到第一半导体芯片(14)上,其中第二半导体芯片的中心首先压到第一半导体芯片(14)上;
逐步形成的压力使吸气机构(4)弹性变形,从而使正常的凸面(6)变成平面;以及
升高没有第二半导体芯片(2)的拾取工具。
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CH2337/2001 | 2001-12-21 | ||
CH23372001 | 2001-12-21 |
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CN1260791C true CN1260791C (zh) | 2006-06-21 |
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US (1) | US20030115747A1 (zh) |
KR (1) | KR20030052986A (zh) |
CN (1) | CN1260791C (zh) |
TW (1) | TWI283906B (zh) |
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2002
- 2002-11-22 TW TW091134102A patent/TWI283906B/zh not_active IP Right Cessation
- 2002-12-11 KR KR1020020078826A patent/KR20030052986A/ko not_active Application Discontinuation
- 2002-12-20 US US10/327,493 patent/US20030115747A1/en not_active Abandoned
- 2002-12-20 CN CNB021575681A patent/CN1260791C/zh not_active Expired - Fee Related
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TW200301532A (en) | 2003-07-01 |
US20030115747A1 (en) | 2003-06-26 |
CN1427459A (zh) | 2003-07-02 |
TWI283906B (en) | 2007-07-11 |
KR20030052986A (ko) | 2003-06-27 |
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