CN1252827C - 高单元密度的功率整流器及其制造方法和计算机主板 - Google Patents
高单元密度的功率整流器及其制造方法和计算机主板 Download PDFInfo
- Publication number
- CN1252827C CN1252827C CNB008108196A CN00810819A CN1252827C CN 1252827 C CN1252827 C CN 1252827C CN B008108196 A CNB008108196 A CN B008108196A CN 00810819 A CN00810819 A CN 00810819A CN 1252827 C CN1252827 C CN 1252827C
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- rectifier
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/095—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being Schottky barrier gate field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (39)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/322,269 US6186408B1 (en) | 1999-05-28 | 1999-05-28 | High cell density power rectifier |
US09/322,269 | 1999-05-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1364315A CN1364315A (zh) | 2002-08-14 |
CN1252827C true CN1252827C (zh) | 2006-04-19 |
Family
ID=23254135
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008108196A Expired - Fee Related CN1252827C (zh) | 1999-05-28 | 2000-05-22 | 高单元密度的功率整流器及其制造方法和计算机主板 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6186408B1 (zh) |
CN (1) | CN1252827C (zh) |
AU (1) | AU5037200A (zh) |
HK (1) | HK1048710A1 (zh) |
TW (1) | TW473876B (zh) |
WO (1) | WO2000074141A1 (zh) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6624030B2 (en) | 2000-12-19 | 2003-09-23 | Advanced Power Devices, Inc. | Method of fabricating power rectifier device having a laterally graded P-N junction for a channel region |
US6448160B1 (en) | 1999-04-01 | 2002-09-10 | Apd Semiconductor, Inc. | Method of fabricating power rectifier device to vary operating parameters and resulting device |
US6420225B1 (en) * | 1999-04-01 | 2002-07-16 | Apd Semiconductor, Inc. | Method of fabricating power rectifier device |
US6420757B1 (en) | 1999-09-14 | 2002-07-16 | Vram Technologies, Llc | Semiconductor diodes having low forward conduction voltage drop, low reverse current leakage, and high avalanche energy capability |
US6433370B1 (en) | 2000-02-10 | 2002-08-13 | Vram Technologies, Llc | Method and apparatus for cylindrical semiconductor diodes |
US6589830B1 (en) * | 2000-09-20 | 2003-07-08 | Fairchild Semiconductor Corporation | Self-aligned process for fabricating power MOSFET with spacer-shaped terraced gate |
US6580150B1 (en) | 2000-11-13 | 2003-06-17 | Vram Technologies, Llc | Vertical junction field effect semiconductor diodes |
US6537921B2 (en) | 2001-05-23 | 2003-03-25 | Vram Technologies, Llc | Vertical metal oxide silicon field effect semiconductor diodes |
KR20020094588A (ko) * | 2001-06-12 | 2002-12-18 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조방법 |
US6639276B2 (en) * | 2001-07-05 | 2003-10-28 | International Rectifier Corporation | Power MOSFET with ultra-deep base and reduced on resistance |
US7410851B2 (en) | 2001-07-05 | 2008-08-12 | International Rectifier Corporation | Low voltage superjunction MOSFET |
US6515330B1 (en) | 2002-01-02 | 2003-02-04 | Apd Semiconductor, Inc. | Power device having vertical current path with enhanced pinch-off for current limiting |
US6979861B2 (en) * | 2002-05-30 | 2005-12-27 | Apd Semiconductor, Inc. | Power device having reduced reverse bias leakage current |
US6958275B2 (en) * | 2003-03-11 | 2005-10-25 | Integrated Discrete Devices, Llc | MOSFET power transistors and methods |
US7250668B2 (en) * | 2005-01-20 | 2007-07-31 | Diodes, Inc. | Integrated circuit including power diode |
EP3447803A3 (en) * | 2007-09-26 | 2019-06-19 | STMicroelectronics N.V. | Adjustable field effect rectifier |
US8148748B2 (en) * | 2007-09-26 | 2012-04-03 | Stmicroelectronics N.V. | Adjustable field effect rectifier |
CN101459132B (zh) * | 2007-12-10 | 2010-11-03 | 上海华虹Nec电子有限公司 | 高压平面功率mos器件的制造方法 |
WO2010080855A2 (en) | 2009-01-06 | 2010-07-15 | Lakota Technologies Inc. | Self-bootstrapping field effect diode structures and methods |
US8008142B2 (en) * | 2009-03-13 | 2011-08-30 | International Business Machines Corporation | Self-aligned Schottky diode |
US9291752B2 (en) | 2013-08-19 | 2016-03-22 | 3M Innovative Properties Company | Retroreflecting optical construction |
WO2010127370A2 (en) * | 2009-05-01 | 2010-11-04 | Lakota Technologies, Inc. | Series current limiting device |
US8518811B2 (en) * | 2011-04-08 | 2013-08-27 | Infineon Technologies Ag | Schottky diodes having metal gate electrodes and methods of formation thereof |
CN107204336B (zh) * | 2016-03-16 | 2023-10-20 | 重庆中科渝芯电子有限公司 | 一种高效整流器及其制造方法 |
US11508808B2 (en) * | 2018-10-11 | 2022-11-22 | Actron Technology Corporation | Rectifier device, rectifier, generator device, and powertrain for vehicle |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4903189A (en) | 1988-04-27 | 1990-02-20 | General Electric Company | Low noise, high frequency synchronous rectifier |
US4967243A (en) | 1988-07-19 | 1990-10-30 | General Electric Company | Power transistor structure with high speed integral antiparallel Schottky diode |
US5111253A (en) | 1989-05-09 | 1992-05-05 | General Electric Company | Multicellular FET having a Schottky diode merged therewith |
US5087581A (en) * | 1990-10-31 | 1992-02-11 | Texas Instruments Incorporated | Method of forming vertical FET device with low gate to source overlap capacitance |
DE4121052C2 (de) * | 1991-06-26 | 1993-10-28 | Eurosil Electronic Gmbh | Gleichrichteranordnungen für integrierte Schaltkreise |
US6097046A (en) * | 1993-04-30 | 2000-08-01 | Texas Instruments Incorporated | Vertical field effect transistor and diode |
US5610085A (en) | 1993-11-29 | 1997-03-11 | Texas Instruments Incorporated | Method of making a vertical FET using epitaxial overgrowth |
US5874760A (en) | 1997-01-22 | 1999-02-23 | International Business Machines Corporation | 4F-square memory cell having vertical floating-gate transistors with self-aligned shallow trench isolation |
US5825079A (en) | 1997-01-23 | 1998-10-20 | Luminous Intent, Inc. | Semiconductor diodes having low forward conduction voltage drop and low reverse current leakage |
-
1999
- 1999-05-28 US US09/322,269 patent/US6186408B1/en not_active Expired - Lifetime
-
2000
- 2000-05-22 AU AU50372/00A patent/AU5037200A/en not_active Abandoned
- 2000-05-22 CN CNB008108196A patent/CN1252827C/zh not_active Expired - Fee Related
- 2000-05-22 WO PCT/US2000/014025 patent/WO2000074141A1/en active Application Filing
- 2000-05-26 TW TW089110270A patent/TW473876B/zh not_active IP Right Cessation
-
2003
- 2003-01-30 HK HK03100776.7A patent/HK1048710A1/zh unknown
Also Published As
Publication number | Publication date |
---|---|
TW473876B (en) | 2002-01-21 |
CN1364315A (zh) | 2002-08-14 |
WO2000074141A1 (en) | 2000-12-07 |
US6186408B1 (en) | 2001-02-13 |
AU5037200A (en) | 2000-12-18 |
HK1048710A1 (zh) | 2003-04-11 |
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