CN101459132B - 高压平面功率mos器件的制造方法 - Google Patents
高压平面功率mos器件的制造方法 Download PDFInfo
- Publication number
- CN101459132B CN101459132B CN2007100944179A CN200710094417A CN101459132B CN 101459132 B CN101459132 B CN 101459132B CN 2007100944179 A CN2007100944179 A CN 2007100944179A CN 200710094417 A CN200710094417 A CN 200710094417A CN 101459132 B CN101459132 B CN 101459132B
- Authority
- CN
- China
- Prior art keywords
- source region
- channel body
- power mos
- high voltage
- mos device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007100944179A CN101459132B (zh) | 2007-12-10 | 2007-12-10 | 高压平面功率mos器件的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007100944179A CN101459132B (zh) | 2007-12-10 | 2007-12-10 | 高压平面功率mos器件的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101459132A CN101459132A (zh) | 2009-06-17 |
CN101459132B true CN101459132B (zh) | 2010-11-03 |
Family
ID=40769892
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007100944179A Active CN101459132B (zh) | 2007-12-10 | 2007-12-10 | 高压平面功率mos器件的制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101459132B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103855034A (zh) * | 2014-03-03 | 2014-06-11 | 宁波达新半导体有限公司 | Mos栅极器件的制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5089435A (en) * | 1987-05-27 | 1992-02-18 | Nec Corporation | Method of making a field effect transistor with short channel length |
US5716879A (en) * | 1994-12-15 | 1998-02-10 | Goldstar Electron Company, Ltd. | Method of making a thin film transistor |
CN1364315A (zh) * | 1999-05-28 | 2002-08-14 | Apd半导体公司 | 高单元密度的电源整流器 |
CN1933113A (zh) * | 2005-09-15 | 2007-03-21 | 中芯国际集成电路制造(上海)有限公司 | 形成硅锗源漏结构的集成工艺方法 |
-
2007
- 2007-12-10 CN CN2007100944179A patent/CN101459132B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5089435A (en) * | 1987-05-27 | 1992-02-18 | Nec Corporation | Method of making a field effect transistor with short channel length |
US5716879A (en) * | 1994-12-15 | 1998-02-10 | Goldstar Electron Company, Ltd. | Method of making a thin film transistor |
CN1364315A (zh) * | 1999-05-28 | 2002-08-14 | Apd半导体公司 | 高单元密度的电源整流器 |
CN1933113A (zh) * | 2005-09-15 | 2007-03-21 | 中芯国际集成电路制造(上海)有限公司 | 形成硅锗源漏结构的集成工艺方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101459132A (zh) | 2009-06-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI544648B (zh) | 無需利用附加遮罩來製造的積體有肖特基二極體的平面mosfet及其佈局方法 | |
CN107248533B (zh) | 一种碳化硅vdmos器件及其制作方法 | |
US10680067B2 (en) | Silicon carbide MOSFET device and method for manufacturing the same | |
CN103035521B (zh) | 实现少子存储层沟槽型igbt的工艺方法 | |
CN103050541A (zh) | 一种射频ldmos器件及其制造方法 | |
CN103632974A (zh) | P型ldmos表面沟道器件提高面内均匀性的制造方法 | |
WO2016011674A1 (zh) | 功率mos晶体管及其制造方法 | |
CN104377244A (zh) | 一种降低ldmos导通电阻的器件结构 | |
WO2016015501A1 (zh) | 隧穿晶体管结构及其制造方法 | |
CN104576361A (zh) | 功率二极管的制备方法 | |
CN201663162U (zh) | 单胞中集成肖特基二极管的沟槽mos器件 | |
CN115954379A (zh) | 带有p+沟槽结构的碳化硅mosfet器件及制作方法 | |
US10692995B2 (en) | Insulated-gate bipolar transistor structure and method for manufacturing the same | |
CN104617045A (zh) | 沟槽栅功率器件的制造方法 | |
CN113066865B (zh) | 降低开关损耗的半导体器件及其制作方法 | |
CN206976353U (zh) | 一种优化终端结构的沟槽型半导体器件 | |
CN107134492B (zh) | 超级结功率器件及其制造方法 | |
CN112582477A (zh) | 一种低损耗和漏电的沟槽mos功率器件和制备方法 | |
CN103117309A (zh) | 一种横向功率器件结构及其制备方法 | |
CN104282689A (zh) | 嵌入frd的igbt器件及制造方法 | |
CN101459132B (zh) | 高压平面功率mos器件的制造方法 | |
CN116364755A (zh) | 屏蔽栅沟槽型mosfet器件及其制作方法 | |
CN113314592B (zh) | 一种集成sbr的低损耗高压超结器件及其制备方法 | |
CN101459131B (zh) | 高压平面功率mos器件的制造方法 | |
CN102117834A (zh) | 一种带杂质分凝的复合源mos晶体管及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131217 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
|
TR01 | Transfer of patent right |
Effective date of registration: 20131217 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |