CN101459131B - 高压平面功率mos器件的制造方法 - Google Patents
高压平面功率mos器件的制造方法 Download PDFInfo
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- CN101459131B CN101459131B CN200710094415XA CN200710094415A CN101459131B CN 101459131 B CN101459131 B CN 101459131B CN 200710094415X A CN200710094415X A CN 200710094415XA CN 200710094415 A CN200710094415 A CN 200710094415A CN 101459131 B CN101459131 B CN 101459131B
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CN200710094415XA CN101459131B (zh) | 2007-12-10 | 2007-12-10 | 高压平面功率mos器件的制造方法 |
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CN200710094415XA CN101459131B (zh) | 2007-12-10 | 2007-12-10 | 高压平面功率mos器件的制造方法 |
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CN101459131A CN101459131A (zh) | 2009-06-17 |
CN101459131B true CN101459131B (zh) | 2010-11-03 |
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CN102544083B (zh) * | 2010-12-10 | 2015-02-04 | 比亚迪股份有限公司 | 一种mos型功率器件及其制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US6069034A (en) * | 1998-09-03 | 2000-05-30 | National Semiconductor Corporation | DMOS architecture using low N-source dose co-driven with P-body implant compatible with E2 PROM core process |
US6080614A (en) * | 1997-06-30 | 2000-06-27 | Intersil Corp | Method of making a MOS-gated semiconductor device with a single diffusion |
US6249029B1 (en) * | 1998-09-23 | 2001-06-19 | International Business Machines Corporation | Device method for enhanced avalanche SOI CMOS |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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US6080614A (en) * | 1997-06-30 | 2000-06-27 | Intersil Corp | Method of making a MOS-gated semiconductor device with a single diffusion |
US6069034A (en) * | 1998-09-03 | 2000-05-30 | National Semiconductor Corporation | DMOS architecture using low N-source dose co-driven with P-body implant compatible with E2 PROM core process |
US6249029B1 (en) * | 1998-09-23 | 2001-06-19 | International Business Machines Corporation | Device method for enhanced avalanche SOI CMOS |
Non-Patent Citations (1)
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JP特开平9-289246A 1997.11.04 |
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CN101459131A (zh) | 2009-06-17 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |