CN1252724C - 磁－电阻性存储器阵列的自测试系统 - Google Patents

磁－电阻性存储器阵列的自测试系统 Download PDF

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Publication number
CN1252724C
CN1252724C CNB001323563A CN00132356A CN1252724C CN 1252724 C CN1252724 C CN 1252724C CN B001323563 A CNB001323563 A CN B001323563A CN 00132356 A CN00132356 A CN 00132356A CN 1252724 C CN1252724 C CN 1252724C
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CN
China
Prior art keywords
circuit
test
array
memory cell
transistor
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Expired - Lifetime
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CNB001323563A
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English (en)
Chinese (zh)
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CN1317797A (zh
Inventor
F·A·佩尔纳
K·J·埃尔德雷奇
L·特兰
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Samsung Electronics Co Ltd
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Hewlett Packard Co
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Publication of CN1317797A publication Critical patent/CN1317797A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements

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  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
CNB001323563A 2000-02-04 2000-11-03 磁－电阻性存储器阵列的自测试系统 Expired - Lifetime CN1252724C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/498,588 2000-02-04
US09/498,588 US6584589B1 (en) 2000-02-04 2000-02-04 Self-testing of magneto-resistive memory arrays
US09/498588 2000-02-04

Publications (2)

Publication Number Publication Date
CN1317797A CN1317797A (zh) 2001-10-17
CN1252724C true CN1252724C (zh) 2006-04-19

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CNB001323563A Expired - Lifetime CN1252724C (zh) 2000-02-04 2000-11-03 磁－电阻性存储器阵列的自测试系统

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Country Link
US (1) US6584589B1 (ja)
EP (1) EP1132924A3 (ja)
JP (1) JP4169484B2 (ja)
CN (1) CN1252724C (ja)
HK (1) HK1041361A1 (ja)

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CN110082672B (zh) * 2018-01-25 2020-09-11 大唐移动通信设备有限公司 一种芯片内逻辑模型的测试方法及装置
CN112041928A (zh) 2018-04-30 2020-12-04 慧与发展有限责任合伙企业 忆阻器交叉杆阵列中模型/权重编程的加速
CN111223518B (zh) * 2018-11-27 2021-08-20 中电海康集团有限公司 用于阻性存储单元的测试结构及耐久性测试方法
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CN112230112B (zh) * 2019-06-28 2024-08-23 中电海康集团有限公司 测试结构和测试方法
CN112259153B (zh) * 2019-07-22 2022-06-24 中电海康集团有限公司 Mram阵列的测试电路
CN112259151B (zh) * 2019-07-22 2022-06-24 中电海康集团有限公司 Mram阵列的测试电路
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CN114267405B (zh) * 2020-09-16 2023-08-22 长鑫存储技术有限公司 电流测试电路、装置、方法及存储介质
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Publication number Publication date
HK1041361A1 (zh) 2002-07-05
JP2001273799A (ja) 2001-10-05
EP1132924A3 (en) 2002-12-04
US6584589B1 (en) 2003-06-24
JP4169484B2 (ja) 2008-10-22
EP1132924A2 (en) 2001-09-12
CN1317797A (zh) 2001-10-17

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