CN1218367C - 薄膜半导体器件的制造方法 - Google Patents

薄膜半导体器件的制造方法 Download PDF

Info

Publication number
CN1218367C
CN1218367C CN011410027A CN01141002A CN1218367C CN 1218367 C CN1218367 C CN 1218367C CN 011410027 A CN011410027 A CN 011410027A CN 01141002 A CN01141002 A CN 01141002A CN 1218367 C CN1218367 C CN 1218367C
Authority
CN
China
Prior art keywords
film
thin
semiconductor device
manufacture method
semiconductor film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN011410027A
Other languages
English (en)
Chinese (zh)
Other versions
CN1338770A (zh
Inventor
宫坂光敏
时冈秀忠
小川哲也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Mitsubishi Electric Corp
Original Assignee
Seiko Epson Corp
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Mitsubishi Electric Corp filed Critical Seiko Epson Corp
Publication of CN1338770A publication Critical patent/CN1338770A/zh
Application granted granted Critical
Publication of CN1218367C publication Critical patent/CN1218367C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
CN011410027A 2000-06-12 2001-06-12 薄膜半导体器件的制造方法 Expired - Fee Related CN1218367C (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP175788/2000 2000-06-12
JP175788/00 2000-06-12
JP2000175788 2000-06-12
JP108055/2001 2001-04-06
JP2001108055 2001-04-06
JP108055/01 2001-04-06
JP175984/2001 2001-06-11
JP2001175984A JP4290349B2 (ja) 2000-06-12 2001-06-11 半導体装置の製造方法
JP175984/01 2001-06-11

Publications (2)

Publication Number Publication Date
CN1338770A CN1338770A (zh) 2002-03-06
CN1218367C true CN1218367C (zh) 2005-09-07

Family

ID=27343702

Family Applications (1)

Application Number Title Priority Date Filing Date
CN011410027A Expired - Fee Related CN1218367C (zh) 2000-06-12 2001-06-12 薄膜半导体器件的制造方法

Country Status (3)

Country Link
JP (1) JP4290349B2 (enExample)
CN (1) CN1218367C (enExample)
TW (1) TW521434B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102681288A (zh) * 2012-05-23 2012-09-19 上海交通大学 一种硅基光学限幅器

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4717385B2 (ja) 2003-08-27 2011-07-06 三菱電機株式会社 半導体装置
JP2005236130A (ja) * 2004-02-20 2005-09-02 Hitachi Cable Ltd 半導体装置の製造方法
JP4660103B2 (ja) * 2004-03-09 2011-03-30 三菱電機株式会社 レーザ熱処理方法
JP2006049696A (ja) 2004-08-06 2006-02-16 Mitsubishi Electric Corp 薄膜トランジスタの製造方法
CN100433242C (zh) * 2004-10-10 2008-11-12 友达光电股份有限公司 制作低温多晶硅薄膜的方法
JP4935059B2 (ja) * 2005-02-17 2012-05-23 三菱電機株式会社 半導体装置の製造方法
JP2007035812A (ja) * 2005-07-26 2007-02-08 Mitsubishi Electric Corp 多結晶シリコン膜の製造方法および薄膜トランジスタ
JP5133548B2 (ja) * 2006-09-29 2013-01-30 富士フイルム株式会社 レーザアニール方法およびそれを用いたレーザアニール装置
US8330887B2 (en) * 2007-07-27 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
JP5574312B2 (ja) * 2008-03-25 2014-08-20 国立大学法人山口大学 多結晶シリコン結晶粒界改質方法及び装置
CN113754288B (zh) * 2021-09-08 2023-01-03 深圳爱尔创口腔技术有限公司 通过离子交换增强的荧光硅酸锂玻璃陶瓷及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5629323A (en) * 1979-08-17 1981-03-24 Nec Corp Two-wavelength laser surface treating apparatus
JPH0688979A (ja) * 1992-09-08 1994-03-29 Sumitomo Cement Co Ltd Ｑスイッチ・第２高調波発生複合素子
JPH0864526A (ja) * 1994-08-24 1996-03-08 Sony Corp 光照射による材料の改質方法および半導体装置の製造方法
JPH1084155A (ja) * 1996-09-06 1998-03-31 Ricoh Co Ltd 固体レーザ装置
JP2000068520A (ja) * 1997-12-17 2000-03-03 Matsushita Electric Ind Co Ltd 半導体薄膜、その製造方法、および製造装置、ならびに半導体素子、およびその製造方法
JP3707287B2 (ja) * 1998-09-03 2005-10-19 セイコーエプソン株式会社 半導体装置の製造方法
JP4841740B2 (ja) * 2000-04-26 2011-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102681288A (zh) * 2012-05-23 2012-09-19 上海交通大学 一种硅基光学限幅器
CN102681288B (zh) * 2012-05-23 2015-03-25 上海交通大学 一种硅基光学限幅器

Also Published As

Publication number Publication date
JP2002367904A (ja) 2002-12-20
TW521434B (en) 2003-02-21
CN1338770A (zh) 2002-03-06
JP4290349B2 (ja) 2009-07-01

Similar Documents

Publication Publication Date Title
CN1197127C (zh) 薄膜半导体装置的制造方法
CN1156894C (zh) 薄膜半导体装置的制造方法
CN1249779C (zh) 制造晶体半导体材料的方法和制作半导体器件的方法
CN1057401C (zh) 半导体器件及其制造方法
US6746942B2 (en) Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device
CN1181230C (zh) 激光装置和激光退火方法
CN1218367C (zh) 薄膜半导体器件的制造方法
JPWO2000054313A1 (ja) 薄膜半導体装置の製造方法
CN1407601A (zh) 制造半导体器件的方法
JP4511092B2 (ja) 半導体素子の製造方法
CN1795563A (zh) 硅薄膜退火方法和由该方法制造的多晶硅薄膜
US8859403B2 (en) Systems, methods and materials including crystallization of substrates via sub-melt laser anneal, as well as products produced by such processes
TW200403512A (en) Description of the invention
CN1354495A (zh) 半导体薄膜及其生产方法和设备、及生产单晶薄膜的方法
JP2000269133A (ja) 薄膜半導体装置の製造方法
CN1716071A (zh) 结晶方法、薄膜晶体管制造方法、薄膜晶体管及显示装置
TW200841474A (en) Method for fabricating thin film transistors
JP2000286211A (ja) 薄膜半導体装置の製造方法
JP4586585B2 (ja) 薄膜半導体装置の製造方法
CN101079432A (zh) 显示装置
JPH0773094B2 (ja) 結晶性半導体薄膜の製造方法
JP4581764B2 (ja) 薄膜半導体装置の製造方法
JP2012038843A (ja) 半導体薄膜の製造方法、半導体デバイスおよび半導体薄膜製造装置
JP2002237454A (ja) 薄膜半導体の製造方法
JP2006261183A (ja) 薄膜半導体装置

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20050907

Termination date: 20150612

EXPY Termination of patent right or utility model