CN1215019C - 非还原性介电陶瓷组合物 - Google Patents

非还原性介电陶瓷组合物 Download PDF

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CN1215019C
CN1215019C CNB021584877A CN02158487A CN1215019C CN 1215019 C CN1215019 C CN 1215019C CN B021584877 A CNB021584877 A CN B021584877A CN 02158487 A CN02158487 A CN 02158487A CN 1215019 C CN1215019 C CN 1215019C
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composition
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sintering
dielectric
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CN1429793A (zh
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金瑛珉
申东俶
金宗熙
文泳泰
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Samsung Electro Mechanics Co Ltd
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Abstract

公开了一种非还原性介电组合物。所提供的是一种可靠性很高的基于TC的介电组合物，通过在基于(Ca1-xSrx)m(Zr1-yTiy)O3的常规介电组合物中加入品质优良的烧结添加剂制备而成，从而其可在用于形成镍电极的还原氛下烧结，其可在低于1250℃的低温下烧结，并具有低介电损耗和高电阻率。本发明的组合物包括非还原性介电组合物，其包含由通式(Ca1-xSrx)m(Zr1-yTiy)O3表示的主成分，其中0≤x≤1，0.09≤v≤0.35和0.7≤m≤1.05；及0.5-10重量%由通式aMnO2-bSiO2-dR1O-eR2O2(a+b+d+e)＝100，R1为选自Mg、Ca、Sr和Ba的至少一种元素，R2为Zr和Ti的至少一种元素)表示的次要成分，其中20≤a≤60，10≤b≤65和0＜(d+e)≤65。

Description

非还原性介电陶瓷组合物
技术领域
本发明涉及一种应用于叠层陶瓷电容器、用于温度补偿等的非还原性介电组合物，更特别地，涉及一种具有高绝缘电阻和低介电损耗、可在使用含有镍(Ni)的内电极的还原氛下烧结的、非还原性介电组合物。
背景技术
由于电子产品的数字化、小型化和高功能化，对叠层陶瓷电容器的需求逐年递增，且叠层陶瓷电容器已经应用于多种电子设备如电视机、计算机、摄影机、便携式电话等中。近年来，对于具有优良特性，即高绝缘电阻、低介电损耗及温度变化时电容量的变化小的叠层陶瓷电容器的需求有所增加。
常规的叠层陶瓷电容器是通过在1100-1350℃的环境中烧结高价贵金属如钯(Pd)或含有钯作为内电极的银-钯合金(Ag-Pd)、和基于BaO-Nd2O3-TiO2或MgTiO3-CaTiO3的介电组合物制备的。但是，存在的问题是，由于在还原氛中烧结时形成氧空位，因此组合物表现出绝缘电阻降低和可靠性劣化，因此Ni不能用作内电极。
为使用镍作为内电极，这样的组合物必须能够在还原氛中烧结。到目前为止已知在日本专利公开10-335169号公报中公开了一种基于CSZT的组合物。该组合物由通式(Ca1-xSrx)m(Zr1-yTiy)O3表示的主成分，其满足条件：0≤x≤1，0≤y≤0.1和0.75≤m≤1.04；和次要成分BCG：0.5-15摩尔％、MnO：0.2-5摩尔％、Al2O3：0.1-10摩尔％(以主成分的总摩尔数为基础)以及稀土元素组成。
上述公报公开的组合物的优点是具有不可还原性，且在温度变化时电容量的变化小。另外，该组合物克服了基于锂玻璃(Li-玻璃)的组合物所遇到的在高温-低频条件下介电损耗大的问题。另外，该组合物的特征在于可以获得均匀的小粒径。
尽管具有这些优点。在上述组合物中，介电体的烧结温度高达1300℃，且介电体的烧结开始温度比用作内电极的Ni高。结果，存在的问题是由于内电极和陶瓷间的失配而引起破裂、缺陷等。这是因为在烧结过程中，内电极金属表现出比陶瓷更高的收缩率。
同时，日本专利公开63-289709号公报公开了一种组合物，该组合物由主成分(CaxSr1-x)m(ZryTi1-y)O3(0.3≤x≤0.5，0.92≤y≤0.98，0.95≤m≤1.08)及次要成分MnO2(0.01-4.0重量％)和SiO2(2.0-8.0重量％)组成，该组合物可在还原氛下烧结。该组合物中Ca/Sr的介电常数较高，低于1。
然而，上面的组合物仍然存在问题，即在高温-低频条件下介电损耗大。另外，由于陶瓷的烧结温度高达1300℃，在烧结过程中该组合物会由于电极金属和陶瓷失配而出现缺陷。
发明内容
因此，鉴于上面的问题而进行了本发明，本发明的一个目的是提供一种通过在常规的基于(Ca1-xSrx)m(Zr1-yTiy)O3的介电组合物中加入品质优良的烧结添加剂制备的可靠性很高的介电组合物，从而使其可在用于形成镍电极的还原氛中烧结，该组合物可在低于1250℃的低温下烧结，并具有低介电损耗和高电阻率。
本发明的另一个目的是提供一种满足符合EIA(电气工业协会)标准的TC特性的介电组合物。
根据本发明的一方面，提供一种非还原性介电组合物，其包含由通式(Ca1-xSrx)m(Zr1-yTiy)O3表示的主成分，其中0≤x≤1，0.09≤y≤0.35和0.7≤m≤1.05；及0.5-10重量％由通式aMnO2-bSiO2-cAl2O3(a+b+c＝100)表示的次要成分，其中20≤a≤60，10≤b≤65和1≤c≤10。
根据本发明的另一方面，提供一种非还原性介电组合物，其包含由通式(Ca1-xSrx)m(Zr1-yTiy)O3表示的主成分，其中0≤x≤1，0.09≤y≤0.35和0.7≤m≤1.05；及0.5-10重量％由通式bSiO2-cAl2O3-dR1O(b+c+d＝100，R1为选自Mg、Ca、Sr和Ba的至少一种元素)表示的次要成分，其中10≤b≤65，0≤c≤10和0≤d≤50。
根据本发明的再一方面，提供一种非还原性介电组合物，其包含由通式(Ca1-xSrx)m(Zr1-yTiy)O3表示的主成分，其中0≤x≤1，0.09≤y≤0.35和0.7≤m≤1.05；及0.5-10重量％由通式aMnO2-bSiO2-dR1O-eR2O2(a+b+d+e＝100，R1为选自Mg、Ca、Sr和Ba的一种或两种元素，R2为Zr和Ti的至少一种)表示的次要成分，其中20≤a≤60，10≤b≤65和0＜(d+e)≤65。
最后，根据本发明的再一方面，提供一种非还原性介电组合物，其包含由通式(Ca1-xSrx)m(Zr1-yTiy)O3表示的主成分，其中0≤x≤1，0.09≤y≤0.35和0.7≤m≤1.05；及0.5-10重量％由通式bSiO2-dR1O-eR2O2(b+d+e＝100，R1为选自Mg、Ca、Sr和Ba的至少一种元素，R2为Zr和Ti之一)表示的次要成分，其中10≤b≤65，10≤d≤20和10≤e≤60。
另外，本发明提供多层陶瓷电容器，包含：
由本发明的介电组合物形成的许多片；和在各片上的许多电极，其中片和电极交替层压。
具体实施方式
以下，将详细说明本发明的非还原性介电组合物。
本发明涉及一种非还原性介电组合物，其中其主成分由通式(Ca1-xSrx)m(Zr1-yTiy)O3表示。根据使用常用材料的本发明，需要x、y和m满足条件0≤x≤1，0.09≤y≤0.35和0.7≤m≤1.05。
主成分中下标x在0≤x≤1的范围内。即，该组合物可以含有Ca和Sr的任意混合物，或两者中的仅仅一种元素。x的值越大，即Sr的比例越高，则晶体的平均粒径越大，且介电常数增加越多。为使烧结后的粒径更小，优选x小于0.5。
主成分中下标y在0.09≤y≤0.35的范围内。电容量温度系数和介电常数取决于y值。y值越大，电容量温度系数变得越负，介电常数增加越多。为获得本发明的基于TC的介电组合物，y的范围限制在0.09≤y≤0.35。结果，可获得满足温度系数为-150±60ppm/℃(PH特性)、-220±60ppm/℃(RH)、-470±60ppm/℃(TH)、-750±120ppm/℃(UJ)要求的组合物。
主成分中下标m在0.7≤m≤1.05的范围内。但是，不理想的情况是，如果m小于0.7，则介电损耗增大，且如果m超过1.05，则烧结温度上升。
在本发明的介电组合物中还含有次要成分。作为烧结添加剂添加的次要成分选自四种类型的烧结添加剂。根据本发明，烧结添加剂的添加量优选占主成分总量的0.5-10重量％。如果烧结添加剂的量低于0.5重量％，烧结性劣化。当其添加量超过10重量％时，介电体的内在品质劣化，例如，低介电常数、介电损耗增加等。
第一种类型的烧结添加剂是由通式aMnO2-bSiO2-cAl2O3(a+b+c＝100)表示的次要成分，其中20≤a≤60，10≤b≤65和1≤c≤10。
MnO2用作接受体，因此吸收在还原氛下烧结主成分时产生的氧空位中的自由电子，这又使在还原氛下烧结成为可能。但是，不理想的情况是，如果MnO2含量低于20摩尔％，电阻率值降低，且如果MnO2含量超过60摩尔％，固溶体达不到使MnO2沉淀的程度，烧结性劣化。
SiO2的含量定为10-65摩尔％。如果该含量低于10摩尔％不产生效果，如果该含量超过65摩尔％，因粘度使烧结性倾向于劣化。
添加Al2O3以改善耐水性和机械强度。由于加于过量Al2O3时其不溶解而是沉淀，因此优选Al2O3在次要成分中的含量低于10摩尔％。
第二种类型的烧结添加剂是由通式bSiO2-cAl2O3-dR1O(b+c+d＝100，R1为选自Mg、Ca、Sr和Ba的至少一种元素)表示的次要成分，其中10≤b≤65，0＜c≤10和0≤d≤50。
第三种类型的烧结添加剂是由通式aMnO2-bSiO2-dR1O-eR2O2(a+b+d+e＝100，R1为选自Mg、Ca、Sr和Ba的至少一种元素，R2为选自Zr和Ti的至少一种元素)表示的次要成分，其中20≤a≤60，10≤b≤65和0＜(d+e)≤65。
最后，第四种类型的烧结添加剂是由通式bSiO2-dR1O-eR2O2(b+d+e＝100，R1为选自Mg、Ca、Sr和Ba的至少一种元素，R2为Zr和Ti元素之一)表示的次要成分，其中10≤b≤65，10≤d≤20和10≤e≤60。
可以含有由R1O或R2O2表示的金属氧化物作为次要成分的一部分，以改善次要成分本身的性能如耐水性、耐酸性等。作为为此而使用的金属离子，R1为选自Ba、Ca、Sr和Mg的至少一种元素，R2为选自Ti和Zr的至少一种元素。这些金属氧化物改性玻璃表面，或与非桥氧离子键合，从而使改善次要成分的化学稳定性成为可能。在不背离具有上述烧结添加剂组成的次要成分的范围的情况下，添加这些金属氧化物至烧结性不下降、且达到它们的效果的程度。
实施例
以下，将通过非限制性的实施例详细说明本发明。
为制备具有下表1所示比例的基于(Ca1-xSrx)m(Zr1-yTiy)O3的非还原性介电组合物，称量CaCO3、SrCO3、TiO2和ZrO2，将称量的材料混合，然后在1100-1250℃的温度下烧结数小时，之后粉碎，形成主成分。
至于次要成分，以下表2所示的比例称量MnO2、SiO2、CaCO3、MgCO3、SrCO3、BaCO3、Al2O3、ZrO2和TiO2并将其混合，并在1500℃的铂坩锅中完全溶融并迅速急冷至室温，形成作为玻璃相的成分，或称量、混合、在1200℃的温度下烧结数小时，然后粉碎，形成该成分。
按下表1所示的比例称量主成分和次要成分，并在其中加入PVB或丙烯酸粘合剂或溶剂、增塑剂等，然后用高能磨分散形成浆料，之后将浆料转变为厚度10μm的片(sheet)。
将使用镍或含镍的非金属电极材料作为内电极的电极糊剂印刷在转变后的片上然后层压。将所得的层压体切割，形成生片(greenchips)，将生片在200-300℃的空气中焙烧12-48小时，然后在200-600℃的氮气(N2)氛下焙烧0.5-48小时。
结束焙烧后，为避免内电极氧化，在还原氛(氧分压为10-8-10-15atm)、1250℃或更低的烧结温度下将生片烧结，然后在1100-800℃范围的温度下、氧分压为10-5-10-8atm的条件下加热，得到烧结体。
对如此得到的烧结体进行抛光。随后，由金属如Cu形成外电极。在约700-900℃F烧结外电极，然后对其电镀以避免氧化和进行焊接。
表1
  样品   x   1-x   y   1-y   m     玻璃粉(GF)类型     GF添加量
  实施例1   0.0   1.0   0.21   0.79   1.0     F     2.5
  实施例2   0.0   1.0   0.23   0.77   1.0     H     2.5
  实施例3   0.0   1.0   0.23   0.77   1.0     I     2.5
  实施例4   0.5   0.5   0.29   0.71   1.0     I     2.5
  实施例5   0.7   0.0   0.09   0.71   1.0     H     2.5
  实施例6   0.74   0.0   0.15   0.85   1.0     I     2.5
  实施例7   0.77   1.0   0.24   0.76   1.0     A     2.5
  实施例8   0.78   1.0   0.28   0.72   1.0     D     2.5
  实施例9   1   0.3   0.12   0.88   1.0     C     2.5
  实施例10   1   0.3   0.21   0.79   1.0     D     2.5
  实施例11   1   0.3   0.3   0.70   1.0     C     2.5
  比较例1   0.0   1.0   0.0   1.0   1.0     B     2.5
  比较例2   0.0   1.0   1.0   0.0   1.0     A     2.5
  比较例3   0.7   0.0   0.03   0.97   1.0     G     2.5
  比较例4   1   0.3   1.0   0.0   1.0     E     2.5
表2
样品 MnO2 SiO2 Al2O3                       R1           R2
  BaO   MgO   CaO   SrO   TiO2   ZrO2
    A   35.02   56.20   8.78
    B   50.00   38.85   11.15
    C   50.00   8.29   8.43   33.27
    D   22.22   18.52   18.52   40.74
    E   63.12   18.44   18.45
    F   29.13   49.74   6.86   3.45   10.82
    G*   50.00   25.00   25.00
    H   55.24   40.19   4.57
    I   42.73   9.02   18.92   29.33
                                    带星号*的样品的烧结添加剂条件在本发明之外。
试验了分别按如上所述表1和表2所示的组成比例制备的各样品，以测定其特性。
评价项目有介电常数、电容量温度系数、tanδ和电阻率，各项目的测定方式如下。介电常数是基于1MHz、25℃、1Vrms(交流电压：1V)条件下的电容量测定的，tanδ也在1MHz、25℃、1Vrms的条件下测定，其表示介电损耗。电容量温度系数(TCC)是以25℃的电容量为基础，在-55℃/125℃的范围内测定，由下面的方程式给出：
TCC(ppm/℃)＝[(CT-C25℃)/C25℃]/(T-25℃)×106
式中，-55℃≤T≤+125℃。
在施加50V的额定电压60秒后测定25℃的电阻率，单位为Ωcm。各样品的测定结果如下表3所示。
表3
样品   烧结温度(℃) 介电常数   Tanδ(％)            TCC(ppm/℃)   电阻率(Ωcm)   粒径(μm)
  125℃   -55℃   特性
实施例1   1,200   58.36   0.03   -671   -778   UJ   ＞E15   1.4
实施例2   1,200   60.4   0.04   -670   -830   UJ   ＞E15   1.4
实施例3   1,200   61.05   0.03   -730   -840   UJ   ＞E15   1.4
实施例4   1,200   62.14   0.03   -630   -710   UJ   ＞E15   1.3
实施例5   1,200   38.4   0.04   -147   -180   PH   ＞E15   1.5
实施例6   1,250   42.15   0.04   -227   -253   RH   ＞E15   1.5
实施例7   1,230   53.82   0.04   -456   -508   TH   ＞E15   1.4
实施例8   1,250   61.32   0.07   -728   -856   UJ   ＞E15   1.6
实施例9   1,230   37.1   0.04   -207   -280   RH   ＞E15   1.6
实施例10   1,250   47.5   0.05   -405   -520   TH   ＞E15   1.5
实施例11   1,250   60.45   0.05   -706   -850   UJ   ＞E15   1.5
比较例1   1,300   30.14   0.05   134   162   -   ＞E15   2.5
比较例2   1,200   198   0.09   -2200   -3300   -   ＞E15   2.5
比较例3   1,230   35.81   0.04   -33.6   -85.3   -   ＞E15   1.4
比较例4   1250   156   0.05   -1400   -1800   -   ＞E15   1.3
从上表3可以看出，本发明的实施例介电损耗(tanδ)低、电阻率高，可以在用于形成镍电极的还原氛下烧结，并可在低于1250℃的低温下烧结。特别地，本发明的实施例提供了一种满足符合EIA标准的TC特性的介电组合物。
另一方面，组成范围在本发明之外的比较例(1-4)在过高的温度下过度烧结或不满足TC特性(PH、RH、TH和UJ特性)。
从上述内容明显可以看出，本发明提供了一种组合物，其可以在低于1250℃的低温下烧结，以及可以在用于形成镍电极的还原氛下烧结。结果，烧结过程中镍电极和陶瓷的失配可以避免。另外，该介电组合物可以提供介电损耗低、电阻率高的基于TC的介电组合物。
尽管出于说明的目的揭示了本发明的优选实施方案，但本领域的技术人员应理解在不背离由附带的权利要求书揭示的本发明的范围和思想的情况下，可以进行多种变更、添加和替代。

Claims (2)

1.一种非还原性介电组合物，包含由通式(Ca1-xSrx)m(Zr1-yTiy)O3表示的主成分，其中0≤x≤1，0.09＜y≤0.35和0.7≤m≤1.05；及占主成分总量的0.5-10重量％的由通式aMnO2-bSiO2-dR1O-eR2O2表示的次要成分，其中20≤a≤60，10≤b≤65和0＜(d+e)≤65，以及a+b+d+e＝100，R1为选自Mg、Ca、Sr和Ba的至少一种元素，R2为Zr和Ti的至少一种元素。
2.一种多层陶瓷电容器，包含：
由权利要求1的介电组合物形成的许多片；和
在各片上的许多电极，
其中片和电极交替层压。
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Families Citing this family (24)

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Publication number Priority date Publication date Assignee Title
TW492017B (en) * 2000-06-29 2002-06-21 Tdk Corp Dielectrics porcelain composition and electronic parts
KR100444230B1 (ko) * 2001-12-27 2004-08-16 삼성전기주식회사 내환원성 유전체 자기 조성물
JP4506084B2 (ja) * 2002-04-16 2010-07-21 株式会社村田製作所 非還元性誘電体セラミックおよびその製造方法ならびに積層セラミックコンデンサ
JP4403705B2 (ja) 2003-02-17 2010-01-27 Ｔｄｋ株式会社 誘電体磁器組成物および電子部品
KR100533639B1 (ko) * 2004-02-24 2005-12-06 삼성전기주식회사 내환원성 유전체 조성물 및 그 제조방법
US20060229188A1 (en) * 2005-04-07 2006-10-12 Randall Michael S C0G multi-layered ceramic capacitor
US7923395B2 (en) * 2005-04-07 2011-04-12 Kemet Electronics Corporation C0G multi-layered ceramic capacitor
US7172985B2 (en) * 2005-06-07 2007-02-06 Kemet Electronics Corporation Dielectric ceramic capacitor comprising non-reducible dielectric
JP4784172B2 (ja) * 2005-06-24 2011-10-05 Ｔｄｋ株式会社 焼結助剤、誘電体磁器組成物の製造方法及び電子部品の製造方法
JP4784171B2 (ja) * 2005-06-24 2011-10-05 Ｔｄｋ株式会社 焼結助剤、誘電体磁器組成物の製造方法及び電子部品の製造方法
JP5153118B2 (ja) * 2005-10-27 2013-02-27 京セラ株式会社 誘電体ペースト、ガラスセラミック多層配線基板、電子装置、およびガラスセラミック多層配線基板の製造方法。
EP1980545B1 (en) * 2007-04-12 2009-12-09 TDK Corporation Dielectric ceramic composition and electronic device
JP5158113B2 (ja) * 2010-03-17 2013-03-06 株式会社村田製作所 誘電体磁器組成物及び温度補償用積層コンデンサ
CN103124707A (zh) * 2011-01-21 2013-05-29 株式会社村田制作所 层叠陶瓷电容器及层叠陶瓷电容器的制造方法
US8923794B2 (en) * 2011-11-02 2014-12-30 Triquint Semiconductor, Inc. Temperature compensation of acoustic resonators in the electrical domain
DE112013003964T5 (de) * 2012-08-09 2015-04-16 Murata Manufacturing Co., Ltd. Laminierter Keramikkondensator und Herstellungsverfahren dafür
JP2015195342A (ja) * 2014-03-28 2015-11-05 Tdk株式会社 誘電体組成物および電子部品
KR102183423B1 (ko) * 2014-12-08 2020-11-26 삼성전기주식회사 유전체 자기 조성물 및 이를 포함하는 적층 세라믹 커패시터
KR102516760B1 (ko) * 2016-01-05 2023-03-31 삼성전기주식회사 유전체 조성물 및 이를 포함하는 적층 세라믹 커패시터
US10600611B2 (en) * 2017-12-12 2020-03-24 Applied Materials, Inc. Ion source crucible for solid feed materials
JP2020068262A (ja) * 2018-10-23 2020-04-30 株式会社村田製作所 誘電体磁器組成物及び積層セラミックコンデンサ
US11170973B2 (en) 2019-10-09 2021-11-09 Applied Materials, Inc. Temperature control for insertable target holder for solid dopant materials
JP2023541576A (ja) * 2020-09-10 2023-10-03 ケメット エレクトロニクス コーポレーション 誘電体セラミック組成物及びそれを用いたセラミックコンデンサ
US11854760B2 (en) 2021-06-21 2023-12-26 Applied Materials, Inc. Crucible design for liquid metal in an ion source

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61147405A (ja) * 1984-12-18 1986-07-05 太陽誘電株式会社 誘電体磁器組成物
JPS62157607A (ja) * 1985-12-30 1987-07-13 太陽誘電株式会社 誘電体磁器組成物
JPH0831284B2 (ja) * 1986-11-14 1996-03-27 株式会社村田製作所 非還元性温度補償用誘電体磁器組成物
US4859641A (en) * 1987-03-11 1989-08-22 Masaru Fujino Nonreducible dielectric ceramic composition
JPH0824007B2 (ja) * 1987-03-11 1996-03-06 株式会社村田製作所 非還元性誘電体磁器組成物
JPS63289707A (ja) * 1987-05-20 1988-11-28 Murata Mfg Co Ltd 非還元性誘電体磁器組成物
JPS63289710A (ja) * 1987-05-20 1988-11-28 Murata Mfg Co Ltd 非還元性誘電体磁器組成物
JPS63289709A (ja) 1987-05-20 1988-11-28 Murata Mfg Co Ltd 非還元性誘電体磁器組成物
KR0119124B1 (ko) * 1994-07-22 1998-07-01 이형도 내환원성 유전체 조성물
JP2997236B2 (ja) 1997-03-31 2000-01-11 ティーディーケイ株式会社 非還元性誘電体磁器材料
KR100268702B1 (ko) * 1998-04-30 2000-10-16 한영호 유전체세라믹조성물
KR100374848B1 (ko) * 1998-09-30 2003-03-04 티디케이가부시기가이샤 비환원성 유전체 자기재료, 그 제조방법 및 적층자기 콘덴서
JP3389220B2 (ja) * 2000-02-09 2003-03-24 ティーディーケイ株式会社 誘電体磁器組成物、電子部品および電子部品の製造方法
US6656863B2 (en) * 2000-02-09 2003-12-02 Tdk Corporation Dielectric ceramic composition, electronic device, and method for producing the same
US6627570B2 (en) * 2000-02-09 2003-09-30 Tdk Corporation Dielectric ceramic composition, electronic device, and method of producing the same
US6645895B2 (en) * 2000-03-30 2003-11-11 Tdk Corporation Method of producing ceramic composition and method of producing electronic device
JP3470703B2 (ja) * 2000-04-07 2003-11-25 株式会社村田製作所 非還元性誘電体セラミックおよびそれを用いた積層セラミックコンデンサ、ならびに非還元性誘電体セラミックの製造方法

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