CN1211872C - 具有改善的抗干扰性的磁致电阻存储器 - Google Patents

具有改善的抗干扰性的磁致电阻存储器 Download PDF

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Publication number
CN1211872C
CN1211872C CNB998108928A CN99810892A CN1211872C CN 1211872 C CN1211872 C CN 1211872C CN B998108928 A CNB998108928 A CN B998108928A CN 99810892 A CN99810892 A CN 99810892A CN 1211872 C CN1211872 C CN 1211872C
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bit line
memory cell
layer
magneto
memory
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Expired - Fee Related
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CN1318198A (zh
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W·维贝尔
R·特维斯
G·普拉萨
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Infineon Technologies AG
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)

Abstract

本申请对象涉及磁致电阻存储器，其中，在较小的芯片面积情况下，通过以下方式改善了抗干扰性，即在两个互补位线之间存在垂直的字线，在位线和字线之间存在一正规的单元的、磁致电阻存储器系，在互补的位线和字线之间存在互补的存储单元从属的磁致电阻存储器系。

Description

具有改善的抗干扰性的磁致电阻存储器
技术领域
本发明涉及磁致电阻写/读存储器(MRAM)，其存储效应处于存储单元的磁致可变电阻内。
背景技术
从国际通报WO 95/10110以及从US 5 699 293获悉非易失铁磁写/读存储器，其中，在两个铁磁层之间存在非磁性、非导电层，其中一层具有固定的取向，而另一层具有通过运行确定的磁性取向，并且其中在两个铁磁层之上的电阻随各自的磁矩的取向而改变。
发明内容
本发明的任务是提供磁致电阻写/读存储器，其中，在尽可能小的芯片面积情况下，可提高抗干扰性。
本发明的任务通过以下技术方案解决。
根据本发明的一种磁致电阻存储器，其中，上下垂直重叠地存在用于第一位线的层，第一存储单元的磁阻层装置，用于字线的层，第二存储单元的磁阻层装置和用于另一位线的层，其中，在第一和第二存储单元内可存储的状态是各自彼此相反的。
本发明还包括基于上述技术方案的有益扩展。
附图说明
本发明的实施例依靠附图详细说明如下，即：
图1示出本发明的MRAM一部分的剖面，以及
图2示出图1内存在的磁致电阻层系的剖面。
具体实施方式
本发明主要在于对每单个存储单元存在一个本地参考存储单元，并且一公共字线垂直地处在这两个存储单元之间，由此可以实现极节省平面和特别好的干扰补偿。
图1内示出了具有两字线WL和两位线BL，BL的磁致存储器的一部分。各自的磁阻层装置MRS处于位线BL和字线WL之间。按同样方式，这种磁阻层装置也处于字线WL和另外的位线BL之间。按照这方式，总单元大小只具有4f2是可能的，其中f表示最小可分辨的结构宽度。在位线BL和字线WL之间的磁阻层装置组成规则的存储单元Z，而在字线WL和另外的位线BL之间的磁阻层装置组成互补的存储单元Z。在互补的存储单元Z内存储对各处于其下的存储单元Z相反的状态，以及借助位线BL和BL写入。位线BL上通过对位线BL上的信号相反的信号，其中在位线BL内流过的电流I对在位线BL内的电流I按相反的方向流过。因为磁致层的电阻本身与其储存的状态有关，只相差约10％的量级，因此必须考虑干扰量的影响。因为在位线BL和BL上的信号彼此相反，所以可以通过形成差数实现网络信号的放大，并对在两互补单元上起相同作用的干扰量进行衰减，因此改善了抗干扰性。
图2更详细地示出了图1的单元Z和Z的磁阻层装置MRS。该装置MRS主要由软磁层WM和硬磁层HM组成，这两层通过隧道氧化物TOX彼此分开。铁磁层通常由包含铁、镍和钴至少一种物质的材料组成，其中层HM的材料具有比层WM更高的矫顽力。隧道氧化物TOX例如由Al2O3组成。也可以用其他薄绝缘层，如例如氮化硅或类似物，取代隧道氧化物TOX。
磁阻层装置例如通过在所选择的位线BL和所选择的字线WL内足够的电流持久地改变单元Z的软磁层WM的磁化方向内，并因此储入逻辑状态零或1。之后，单元的读出通过以下方式形成，即通过单元从所属的字线到附属的位线流过电流，其中，电流强度与软磁层WM的磁化方向有关。例如当在层WM和HM内的磁化方向平行时或反平行时，电流强度是不同，因为在两种情况下，隧道概率是不同的。

Claims (3)

1.一种磁致电阻存储器，
其中，上下垂直重叠地存在用于第一位线的层，第一存储单元的磁阻层装置，用于字线的层，第二存储单元的磁阻层装置和用于另一位线的层，其中，在第一和第二存储单元内可存储的状态是各自彼此相反的。
2.根据权利要求1所述的磁致电阻存储器，
其中，所述第二存储单元在可存储的状态下总具有置于其下单元的相反的状态，其中，在所述第一位线内的电流具有与置于其上的另一位线的电流相反的方向。
3.根据前述权利要求之一所述的磁致电阻存储器，
其中，磁阻层装置具有一软磁层和一硬磁层，它们通过薄隧道氧化物彼此分开。
CNB998108928A 1998-09-30 1999-09-29 具有改善的抗干扰性的磁致电阻存储器 Expired - Fee Related CN1211872C (zh)

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DE19845069 1998-09-30
DE19845069.9 1998-09-30

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CN1211872C true CN1211872C (zh) 2005-07-20

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US (1) US6366494B2 (zh)
EP (1) EP1119860B1 (zh)
JP (1) JP2002526910A (zh)
KR (1) KR100571437B1 (zh)
CN (1) CN1211872C (zh)
DE (1) DE59903868D1 (zh)
TW (1) TW440835B (zh)
WO (1) WO2000019441A2 (zh)

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WO2000019441A2 (de) 2000-04-06
EP1119860B1 (de) 2002-12-18
CN1318198A (zh) 2001-10-17
KR20010100819A (ko) 2001-11-14
EP1119860A2 (de) 2001-08-01
US6366494B2 (en) 2002-04-02
KR100571437B1 (ko) 2006-04-17
WO2000019441A3 (de) 2000-05-25
JP2002526910A (ja) 2002-08-20
TW440835B (en) 2001-06-16
US20010043488A1 (en) 2001-11-22
DE59903868D1 (de) 2003-01-30

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